2SA1483O(TE12L,F) [TOSHIBA]

TRANSISTOR,BJT,PNP,45V V(BR)CEO,200MA I(C),SOT-89;
2SA1483O(TE12L,F)
型号: 2SA1483O(TE12L,F)
厂家: TOSHIBA    TOSHIBA
描述:

TRANSISTOR,BJT,PNP,45V V(BR)CEO,200MA I(C),SOT-89

文件: 总4页 (文件大小:165K)
中文:  中文翻译
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2SA1483  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1483  
High Frequency Amplifier Applications  
Unit: mm  
Video Amplifier Applications  
High Speed SwitcHing Applications  
High transition frequency: f = 200 MHz (typ.)  
T
Low collector output capacitance: C = 3.5 pF (typ.)  
ob  
Complementary to 2SC3803  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
60  
45  
5  
V
V
Collector-emitter voltage  
Emitter-base voltage  
V
Continuous collector current  
Continuous base current  
I
200  
50  
500  
mA  
mA  
C
I
B
PW-MINI  
JEDEC  
P
P
C
C
Collector power dissipation  
mW  
1000  
JEITA  
SC-62  
2-5K1A  
(Note 1)  
TOSHIBA  
Junction temperature  
T
150  
°C  
°C  
j
Weight: 0.05 g (typ.)  
Storage temperature range  
T
stg  
55 to 150  
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)  
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2006-11-09  
2SA1483  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 45 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
0.1  
0.1  
μA  
μA  
CBO  
CB  
EB  
E
I
= 5 V, I = 0  
C
EBO  
h
FE (1)  
V
V
= 1 V, I = 10 mA  
40  
240  
CE  
CE  
C
DC current gain  
(Note 3)  
h
= 3 V, I = 200 mA  
20  
0.3  
1.0  
FE (2)  
C
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
V
V
I
I
= 100 mA, I = 10 mA  
V
V
CE (sat)  
C
C
B
= 100 mA, I = 10 mA  
BE (sat)  
B
f
V
V
V
= 10 V, I = 10 mA  
100  
200  
MHz  
T
CE  
CE  
CB  
C
Input impedance (real part)  
Collector output capacitance  
Re (h )  
ie  
= 10 V, I = 10 mA, f = 200 MHz  
120  
5
E
C
= 10 V, I = 0, f = 1 MHz  
3.5  
pF  
ob  
E
Turn-on time  
t
40  
250  
30  
OUTPUT  
on  
INPUT  
680 Ω  
0
Switching time  
ns  
Storage time  
Fall time  
t
stg  
V
10 V  
CC  
= 12 V  
V
1 μs  
BB  
= 3 V  
DUTY CYCLE 2%  
t
f
Note 3:  
h
classification R: 40 to 80, O: 70 to 140, Y: 120 to 240  
FE (1)  
Marking  
Part No. (or abbreviation code)  
Characteristics indicator  
W
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
Lot No.  
2
2006-11-09  
2SA1483  
I
– V  
h
– I  
FE C  
C
CE  
1000  
Common emitter  
= −3 V  
200  
Common emitter  
500  
300  
V
10  
CE  
5.0  
Ta = 25°C  
Ta = 100°C  
160  
120  
80  
40  
0
3.0  
25  
100  
2.0  
1.5  
55  
50  
30  
1.0  
0.5  
10  
0.1  
0.3  
1  
3  
10  
30  
100  
Collector current  
I
C
(mA)  
I
= −0.2 mA  
B
0
0
1  
2  
3  
4  
5  
6  
V
– I  
C
CE (sat)  
Collector-emitter voltage  
V
(V)  
CE  
0.5  
0.3  
Common emitter  
I
/I = 10  
C B  
0.1  
Ta = 100°C  
0.05  
0.03  
I
– V  
CE  
C
25  
55  
8.0  
0.01  
200  
Common emitter  
0.1  
0.3  
1  
3  
10  
30  
100  
Ta = 100°C  
Collector current  
I
(mA)  
C
4.0  
160  
120  
80  
40  
0
2.0  
1.0  
0.6  
V
– I  
BE (sat) C  
5  
3  
Common emitter  
I
/I = 10  
C B  
I
= −0.2 mA  
B
Ta = −55°C  
1  
0.5  
0.3  
0
25  
100  
0
1  
2  
3  
4  
5  
6  
Collector-emitter voltage  
V
(V)  
CE  
0.1  
0.1  
0.3  
1  
3  
10  
30  
100  
Collector current  
I
C
(mA)  
I
– V  
P – Ta  
C
C
CE  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
(1) Mounted on a ceramic  
2
200  
Common emitter  
6.0  
Ta = −55°C  
substrate (250 mm × 0.8 t)  
(2) No heat sink  
4.0  
3.0  
160  
120  
80  
40  
0
2.0  
1.5  
1.0  
I
= −0.5 mA  
B
0
0
1  
2  
3  
4  
5  
6  
0
20  
40  
60  
80  
100  
120  
140  
160  
Collector-emitter voltage  
V
(V)  
Ambient temperature Ta (°C)  
CE  
3
2006-11-09  
2SA1483  
RESTRICTIONS ON PRODUCT USE  
20070701-EN  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
4
2006-11-09  

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