XC2164K51V [TOREX]
CMOS Low Power Consumption; CMOS低功耗
| 型号： | XC2164K51V |
| 厂家： | 
Torex Semiconductor |
| 描述： | CMOS Low Power Consumption |
| 文件： | 总11页 (文件大小：380K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
■APPLICATIONS
◆CMOS Low Power Consumption
◆Oscillation Frequency : 4MHz~ 125MHz
: 4MHz ~ 30MHz
●Crystal oscillation modules
●Micro computer, DSP clocks
●Communication equipment
●Various system clocks
(Fundamental Oscillation)
: 20MHz ~ 125MHz
(3rd Overtone Oscillation)
◆3-State Output
◆Built-in Capacitors Cg, Cd
◆Built-in Feedback Resistor
◆Chip form
◆Mini Mold SOT-26 Package
■GENERAL DESCRIPTION
■FEATURES
Oscillation Frequency
Divider Ratio
Output
: 4MHz ~ 30MHz (Fundamental)
The XC2164 series are high frequency, low current
consumption CMOS ICs with built-in crystal oscillator and
divider circuits.
20MHz ~ 125MHz(3rd Overtone)
Selectable from f0/1, f0/2, f0/4, f0/8
(f0/2, f0/4, f0/8 are fundamental only)
:
For fundamental oscillation, output is selectable from any one
of the following values for f0: f0/1, f0/2, f0/4, f0/8.
:3-State
Operating Voltage Range :3.3V±10%, 5.0V±10%
Low Power Consumption :Stand -by function included
Selectable from C/E type and
With oscillation capacitors and a feedback resistor built-in, it is
possible to configure a stable fundamental oscillator or 3rd
overtone oscillator using only an external crystal. Also the
series has stand-by function built-in and the type, which
suspends the oscillation completely (C/E type) or the type
suspends only an output (O/E type) are available. The
XC2164 series are integrated into SOT-26 packages. The
series is also available in chip form.
O/E type
Chip Form
Ultra Small Package
:Chip Size 1.3×0.8 mm
:SOT-26 mini mold
■PIN CONFIGURATION
■PIN ASSIGNMENT
PIN NUMBER
PIN NAME
Q0
FUNCTION
Clock Output
1
2
VSS
Ground
Crystal Oscillator
Connection (Output)
Crystal Oscillator
Connection (Input)
Power Supply
3
/XT
XT
4
5
6
VDD
/INH
Stand-by Control*
*Stand-by control pin has a pull-up resistor built-in.
unit [μm]
■/INH, Q0 PIN FUNCTION
/INH
“H” or OPEN
“L”
Q0
Clock Output
High impedance
1683
XC2164 ETR1404_001.doc
XC2164 Series
■PAD DIMENSIONS
■PAD LAYOUT FOR CHIP FORM
PIN
NANE
PAD DIMENSIONS
PIN NUMBER
X
Y
1
2
3
4
5
6
Q0
VSS
/ XT
XT
VDD
/ INH
514
222
- 450
- 450
514
47
- 264
- 264
- 264
264
27
264
■PRODUCT CLASSIFICATION
●Ordering Information
XC2164 ①②③④⑤⑥
DESIGNATOR
DESCRIPTION
SYMBOL
DESCRIPTION
A
: Chip Enable: f0/1
B
: Chip Enable: f0/2 (Fundamental only)
: Chip Enable: f0/4 (Fundamental only)
: Chip Enable: f0/8 (Fundamental only)
: Output Enable: f0/1
: Output Enable: f0/2 (Fundamental only)
: Output Enable: f0/4 (Fundamental only)
: Output Enable: f0/8 (Fundamental only)
: -
: CMOS (VDD/2) *TTL: Fundamental 4MHz to 30MHz
: 3rd Overtone, built-in type
: Fundamental, built-in type
: Chip form
C
Divider Ratio
&
D
①
K
Stand-by Mode
L
M
N
②
③
Fixed Number
Duty Level
5
1
(Table 1)
Frequency Range & Rf,
④
⑤
Cg, Cd Values
(Table 2)
C
M
R
L
Package
: SOT-26
: Embossed tape, standard feed
: Embossed tape, reverse feed
: Chip tray (Wafer thickness : 280±20μm)
: Chip tray (Wafer thickness : 200±20μm)
: Wafer
⑥
Device Orientation
T
F
W
Table 1: 3rd Overtone, Built-In Type
SYMBOL
FREQUENCY RANGE
Rf
Cg
Cd
（kΩ）
（pF）
（pF）
3.3V ±10%
－
5.0V ±10%
A
B
C
D
E
F
H
K
L
20MHz to 30MHz
30MHz to 40MHz
40MHz to 50MHz
50MHz to 65MHz
65MHz to 80MHz
80MHz to 95MHz
95MHz to 110MHz
110MHz to 125MHz
－
9.0
6.5
5.0
3.5
2.8
2.5
2.2
2.0
2.3
21.5
20.0
16.0
14.0
12.5
10.0
8.0
21.5
20.0
16.0
14.0
12.5
10.0
8.0
20MHz to 30MHz
30MHz to 40MHz
40MHz to 50MHz
50MHz to 65MHz
65MHz to 80MHz
80MHz to 95MHz
95MHz to 110MHz
110MHz to 125MHz
7.0
5.5
7.0
5.5
Table 2: Fundamental, Built-In Type
FREQUENCY RANGE
Rf
Cg
Cd
SYMBOL
（kΩ）
（pF）
（pF）
3.3V ±10%
5.0V ±10%
M, V
T
4MHz to 30MHz
4MHz to 30MHz
4MHz to 30MHz
4MHz to 30MHz
3.5/7.0
3.5/7.0
20.0
35.0
20.0
35.0
(＊)Rf = 3.5MΩ@VDD = 5.0V Operation
Rf = 7.0 MΩ@VDD =3.3V Operation
1684
XC2164
Series
■PACKAGING INFORMATION
●SOT-26
■MARKING RULE
①Represents product series
●SOT-26
MARK
4
6
5
4
②Represents divider ratio
<Chip Enable>
①
②
③
④
MARK
A
RATIO
f0/1
MARK
C
RATIO
f0/4
1
2
3
B
f0/2
D
f0/8
SOT-26
(TOP VIEW)
*B, C, D: fundamental only
<Output Enable>
MARK
K
RATIO
f0/1
MARK
M
RATIO
f0/4
L
f0/2
N
f0/8
*L, M, N: fundamental only
③Represents recommended frequency & Rf, Cg &Cd values
*) Please refer to the ordering information, SYMBOL ① to ④
④Represents assembly lot number
(Based on internal standards)
1685
XC2164 Series
■BLOCK DIAGRAM
■ABSOLUTE MAXIMUM RATINGS
Ta=25℃
PARAMETER
Supply Voltage
Input Voltage
SYMBOL
VDD
VIN
Pd
Topr
CONDITIONS
VSS - 0.3 ~ VSS + 7.0
VSS - 0.3 ~ VDD + 0.3
250*
UNITS
V
V
mW
℃
Power Dissipation
Operating Temperature Range
- 40 ~ + 85
- 65 ~ + 150 (Chip Form)
- 55 ~ + 125 (SOT-26)
℃
Storage Temperature Range
Tstg
℃
** When implemented on a glass epoxy PCB. (SOT-26 package)
1686
XC2164
Series
■ELECTRICAL CHARACTERISTICS
●DC Electrical Characteristics
XC2164A51M, T, V / XC2164K51M, T, V (Fundamental)
5.0V operation (unless otherwise stated, VDD=5.0V, No Load, Ta=-30~+80℃)
PARAMETER
Operating Voltage
"H" Level Input Voltage
"L" Level Input Voltage
"H" Level Output Voltage
"L" Level Output Voltage
SYMBOL
VDD
CONDITIONS
MIN.
4.5
2.4
-
3.9
-
-
-
-
-
-
-
-
TYP.
5.0
-
MAX.
5.5
-
0.4
-
0.4
(15)
(15)
(15)
(15)
(8)
UNITS
V
V
V
V
V
VIH
VIL
VOH
VOL
-
CMOS: VDD=4.5V, IOH=-16mA
CMOS: VDD=4.5V, IOH=16mA
4.2
0.3
11
11
11
11
5
XC2164A51M, V
/INH=Open,
XC2164A51T
Q0=Open
Supply Current 1
IDD1
mA
XC2164K51M, V
f=30MHz
XC2164K51T
XC2164A51M, V
μA
/INH="L",
5
(8)
XC2164A51T
Q0=Open
Supply Current 2
IDD2
XC2164K51M, V
f=30MHz
(T.B.D.*) (T.B.D.*)
mA
-
XC2164K51T
/INH="L"
9
1.0
50
(14)
2.0
100
Input Pull-Up Resistance 1
Input Pull-Up Resistance 2
Internal Oscillation
Feedback Resistance
Output Disable
Rup1
Rup2
0.5
25
MΩ
kΩ
/INH=0.7 VDD
Rf
-
3.5
-
MΩ
IOZ
/INH="L"
-
-
10
μA
Leak Current
* T.B.D.: To be determined
XC2164A51M, XC2164K51M (Fundamental)
3.3V operation (unless otherwise stated, VDD=3.3V, No Load, Ta=-30~+80℃)
PARAMETER
Operating Voltage
"H" Level Input Voltage
"L" Level Input Voltage
"H" Level Output Voltage
"L" Level Output Voltage
SYMBOL
VDD
CONDITIONS
MIN.
2.97
2.4
-
2.5
-
-
-
TYP.
3.30
-
-
-
MAX.
3.63
-
0.4
-
UNITS
V
V
V
V
V
VIH
VIL
VOH
VOL
CMOS: VDD=2.97V, IOH=-8mA
CMOS: VDD=2.97V, IOH=8mA
-
5
0.4
(8)
/INH=Open,
Q0=Open, f=30MHz
/INH="L",
XC2164A51M
XC2164K51M
XC2164A51M
XC2164K51M
Supply Current 1
IDD1
mA
(T.B.D.*) (T.B.D.*)
(4)
-
-
2
μA
mA
MΩ
kΩ
Supply Current 2
IDD2
Q0=Open, f=30MHz
(T.B.D.*) (T.B.D.*)
2.0
70
Input Pull-Up Resistance 1
Input Pull-Up Resistance 2
Internal Oscillation
Feedback Resistance
Output Disable
Rup1
Rup2
/INH="L"
/INH=0.7 VDD
1.0
35
4.0
140
Rf
-
7.0
-
MΩ
Id
/INH="L"
-
-
10
μA
Leak Current
* T.B.D.: To be determined
1687
XC2164 Series
■ELECTRICAL CHARACTERISTICS (Continued)
XC2164A51T, V / XC2164K51T, V (Fundamental)
3.3V operation (unless otherwise stated, VDD=3.3V, No Load, Ta=-30~+80℃)
PARAMETER
Operating Voltage
"H" Level Input Voltage
"L" Level Input Voltage
"H" Level Output Voltage
"L" Level Output Voltage
SYMBOL
VDD
CONDITIONS
MIN.
2.50
2.4
-
2.5
-
-
-
-
-
-
-
-
-
TYP.
3.30
-
-
-
-
4
5
4
5
2
2
MAX. UNITS
3.63
-
0.4
-
0.4
(6.5)
(8)
(6.5)
(8)
(4)
(4)
V
V
V
V
V
VIH
VIL
VOH
VOL
CMOS: 2.97V, IOH=-8mA
CMOS: 2.97V, IOH=8mA
XC2164A51T
/INH=Open,
Q0=Open,
f=30MHz
XC2164A51V
XC2164K51T
XC2164K51V
XC2164A51T
XC2164A51V
XC2164K51T
XC2164K51V
Supply Current 1
IDD1
mA
μA
/INH="L",
Q0=Open,
f=30MHz
Supply Current 2
IDD2
(T.B.D.*) (T.B.D.*)
(T.B.D.*) (T.B.D.*)
2.0
70
mA
Input Pull-Up Resistance 1
Input Pull-Up Resistance 2
Internal Oscillation
Rup1
Rup2
/INH="L"
1.0
35
4.0
140
MΩ
kΩ
/INH=0.7 VDD
Rf
-
-
7.0
-
-
MΩ
μA
Feedback Resistance
Output Disable
Leakage Current
IOZ
/INH="L"
10
* T.B.D.: To be determined
Comparative Chart of Oscillation Frequency vs. Supply Voltage, and Negative Resistance Value
OSCILLATION FREQUENCY vs. SUPPLY VOLTAGE
NEGATIVE RESISTANCE VALUE
SYMBOL
VDD=3.3V±10%
VDD=5.0V±10%
VDD=3.3V
-130Ω
-150Ω
VDD=5.0V
-220Ω
-250Ω
M
V
T
±4.3ppm
±4.5ppm
±1.2ppm
±9.4ppm
±2.1ppm
±7.0ppm
-660Ω
-760Ω
(The designed value when 30MHz crystal is used.)
1688
XC2164
Series
■ELECTRICAL CHARACTERISTICS (Continued)
XC2164A51A ~ XC2164A51K (3rd Overtone)
5.0V Operation (Unless otherwise stated, VDD=5.0V, No Load, Ta=-30~+80℃)
SYMBOL
VDD
VIH
VIL
VOH
PARAMETER
Operating Voltage
"H" Level Input Voltage
"L" Level Input Voltage
"H" Level Output Voltage
"L" Level Output Voltage
CONDITIONS
MIN. TYP. MAX.
UNITS
4.5
2.4
5.0
-
5.5
-
V
V
V
V
V
-
-
0.4
-
CMOS: 4.5V, IOH=-16mA
CMOS: 4.5V, IOH=16mA
3.9
-
-
-
-
-
-
-
-
4.2
0.3
17.0
17.0
19.0
23.0
24.0
30.0
30.0
30.0
5.0
1.0
50
9.0
6.5
5.0
3.5
2.8
2.5
2.2
2.0
VOL
0.4
(23)
(23)
(26)
(32)
(32)
(40)
(40)
(40)
( 8 )
2.0
100
-
-
-
-
-
-
-
-
XC2164A51A, f0=30MHz
XC2164A51B, f0=40MHz
XC2164A51C, f0=55MHz
XC2164A51D, f0=70MHz
XC2164A51E, f0=85MHz
XC2164A51F, f0=100MHz
XC2164A51H, f0=110MHz
XC2164A51K, f0=125MHz
/INH=Open,
Q0=Open
Supply Current 1
IDD1
mA
-
-
Supply Current 2
Input Pull-Up Resistance 1
Input Pull-Up Resistance 2
IDD2
Rup1
Rup2
/INH="L", Q0=Open
μA
MΩ
kΩ
/INH="L"
0.5
25
-
-
-
-
-
-
-
/INH=0.7 VDD
XC2164A51A
XC2164A51B
XC2164A51C
XC2164A51D
XC2164A51E
XC2164A51F
XC2164A51H
XC2164A51K
Internal Oscillation
Feedback Resistance
Rf
kΩ
-
Output Disable
Leak Current
IOZ
/INH="L"
-
-
10
μA
1689
XC2164 Series
■ELECTRICAL CHARACTERISTICS (Continued)
XC2164A51B, C, E, F, H, K, L (3rd Overtone)
3.3V Operation (unless otherwise stated, VDD=3.3V, No Load, Ta=-30~+80℃)
SYMBOL
VDD
VIH
VIL
VOH
VOL
PARAMETER
Operating Voltage
"H" Level Input Voltage
"L" Level Input Voltage
"H" Level Output Voltage
"L" Level Output Voltage
CONDITIONS
MIN. TYP. MAX. UNITS
2.97 3.30 3.63
V
V
V
V
V
2.4
-
2.5
-
-
-
-
0.4
-
CMOS: 2.97V, IOH=-8mA
CMOS: 2.97V, IOH=8mA
-
-
-
-
-
-
-
-
-
0.4
(7)
(8)
(13)
(13)
(15)
(15)
(15)
-
XC2164A51B, f0=30MHz
4.5
5.0
8.0
8.5
9.5
10.0
10.5
2.0
2.0
70
6.5
5.0
2.8
2.5
2.2
2.0
2.3
XC2164A51C, f0=40MHz
XC2164A51E, f0=70MHz
XC2164A51F, f0=85MHz
XC2164A51H, f0=100MHz
XC2164A51K, f0=110MHz
XC2164A51L, f0=125MHz
/INH="L", Q0=Open
/INH="L"
/INH=0.7 VDD
XC2164A51B
XC2164A51C
XC2164A51E
/INH=Open,
Q0=Open
Supply Current 1
IDD1
mA
Supply Current 2
Input Pull-Up Resistance 1
Input Pull-Up Resistance 2
IDD2
Rup1
Rup2
-
μA
MΩ
kΩ
1.0
35
-
4.0
140
-
-
-
-
-
Internal Oscillation
Feedback Resistance
Rf
kΩ
XC2164A51F
XC2164A51H
XC2164A51K
XC2164A51L
-
-
-
-
-
-
-
-
Output Disable
Leak Current
IOZ
/INH="L"
-
-
10
μA
XC2164A51D (3rd Overtone)
3.3V Operation (Unless otherwise stated, VDD=3.3V, Oscillation Frequency f0=48MHz, Ta=30~+80℃)
PARAMETER
Operating Voltage
'H' Level Input Voltage
'L' Level Input Voltage
'H' Level Output Voltage
'L' Level Output Voltage
SYMBOL
VDD
VIH
VIL
VOH
VOL
CONDITIONS
MIN. TYP. MAX. UNITS
2.70
2.4
-
3.30
3.63
-
0.4
-
V
V
V
V
V
-
-
-
-
CMOS: 2.97V, IOH=-8mA
CMOS: 2.97V, IOH=8mA
2.5
-
0.4
XC2164A51D,
F0=55MHz
/INH=Open,
Supply Current 1
IDD1
-
6.5
(10)
mA
Q0=Open
Supply Current 2
Input Pull-Up Resistance 1
Input Pull-Up Resistance 2
Internal Oscillation
IDD2
Rup1
Rup2
/INH = 'L', Q0=Open
-
2.0
2.0
70
-
μA
MΩ
kΩ
/INH = 'L'
/INH = 0.7VDD
1.0
35
4.0
140
Rf
XC2164A51D
/INH = 'L'
-
3.5
-
kΩ
Feedback Resistance
Output Disable Leak
Current
IOZ
-
-
10
μA
1690
XC2164
Series
■SWITCHING CHARACTERISTICS
XC2164A51M, T, V (Fundamental) <Chip Enable>
(unless otherwise stated, VDD=3.3V or 5.0V, Ta=-30~+80℃)
PARAMETER
SYMBOL
tr
CONDITIONS
CMOS: CL=15pF, 0.1VDD→0.9VDD
TTL: Load=10TTL, 0.4V →2.4V
CMOS: CL=15pF, 0.9VDD→0.1VDD
TTL: Load=10TTL, 2.4V →0.4V
CMOS: CL=15pF @ 0.5VDD
TTL: Load=10TTL, 1.4V
MIN. TYP. MAX. UNITS
-
-
1.5
-
-
ns
ns
ns
ns
%
Output Rise Time (*1)
1.5
-
1.5
-
Output Fall Time (*1)
Output Duty Cycle
tf
-
1.5
-
45
45
-
-
-
-
-
-
55
55
100
6
DUTY
%
Output Disable Delay Time (*1)
Output Enable Delay Time (*1)
Oscillation Start Time (*1)
tplz
tplz
f0=4MHz, CL=15pF
ns
ms
ms
f0=4MHz, CL=15pF
-
tosc_on
f0=4MHz, CL=15pF
-
6
*1: the values are the designed values.
XC2164A51A～L (3rd Overtone) <Chip Enable>
(unless otherwise stated, VDD=3.3V or 5.0V, Ta=-30~+80℃)
PARAMETER
SYMBOL
tr
CONDITIONS
MIN. TYP. MAX. UNITS
-
-
1.5
-
-
ns
ns
ns
ns
%
CMOS: CL=15pF, 0.1VDD→0.9VDD
TTL: Load=10TTL, 0.4V →2.4V
CMOS: CL=15pF, 0.9VDD→0.1VDD
TTL: Load=10TTL, 2.4V →0.4V
CMOS: CL=15pF @ 0.5VDD
TTL: Load=10TTL, 1.4V
Output Rise Time (*1)
1.5
-
1.5
-
Output Fall Time (*1)
Output Duty Cycle
tf
-
1.5
-
45
45
-
-
-
-
-
-
55
55
100
6
DUTY
%
Output Disable Delay Time (*1)
Output Enable Delay Time (*1)
Oscillation Start Time (*1)
tplz
tplz
f0=20MHz, CL=15pF
ns
ms
ms
f0=20MHz, CL=15pF
-
tosc_on
f0=20MHz, CL=15pF
-
6
*1: the values are the designed values.
XC2164K51M, T, V (Fundamental) <Output Enable>
(unless otherwise stated, VDD=3.3V or 5.0V, Ta=-30~+80℃)
PARAMETER
SYMBOL
tr
CONDITIONS
MIN. TYP. MAX. UNITS
-
-
1.5
-
-
ns
ns
ns
ns
%
CMOS: CL=15pF, 0.1VDD→0.9VDD
TTL: Load=10TTL, 0.4V →2.4V
CMOS: CL=15pF, 0.9VDD→0.1VDD
TTL: Load=10TTL, 2.4V →0.4V
CMOS: CL=15pF @ 0.5VDD
TTL: Load=10TTL, 1.4V
Output Rise Time (*1)
1.5
-
1.5
-
Output Fall Time (*1)
Output Duty Cycle
tf
-
1.5
-
45
45
-
-
-
-
-
-
55
55
100
10
6
DUTY
%
Output Disable Delay Time (*1)
Output Enable Delay Time (*1)
Oscillation Start Time (*1)
tplz
tplz
f0=4MHz, CL=15pF
ns
μs
ms
f0=4MHz, CL=15pF
-
tosc_on
f0=4MHz, CL=15pF
-
*1: the values are the designed values.
* The values shown are preliminary so that the values may be changed without a prior announcement.
1691
XC2164 Series
■SWITCHING WAVEFORMS
● Switching Time
(1) CMOS Output
(2) TTL Output
● Duty Cycle
(1) CMOS Output
(2) TTL Output
1692
XC2164
Series
■SWITCHING WAVEFORMS(Continued)
(3) Output Disable Delay Time, Output Enable Delay Time *) / INH pin input waveform: less than tr=tf=10ns, VDD Input
(4) Oscillation Start Time: tosc_on
*) VDD pin input waveform : less than tr=tf=10ns,/INH=Open
1693
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