XC2164C51 [TOREX]

ICs for use with Crystal Oscillators; 集成电路与晶体振荡器的使用
XC2164C51
型号: XC2164C51
厂家: Torex Semiconductor    Torex Semiconductor
描述:

ICs for use with Crystal Oscillators
集成电路与晶体振荡器的使用

振荡器 晶体振荡器
文件: 总8页 (文件大小:70K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ICs for use with Crystal Oscillators  
XC2164 Series  
July 30, 2003 Ver. 5  
CMOS Low Power Consumption  
Oscillation Frequency 4MHz to 125MHz  
APPLICATIONS  
Crystal Oscillation Modules  
Micro computer, DSP Clocks  
Communication Equipment  
Various System Clocks  
4MHz to 30MHz  
(Fundamental Oscillation)  
(3rd Overtone Oscillation)  
20MHz to 125MHz  
3 State Output  
Built-in Capacitors Cg, Cd  
Built-in Feedback Resistor  
Chip form  
Mini Mold SOT-26 Package  
GENERAL DESCRIPTION  
FEATURES  
The XC2164 series are high frequency, low current  
consumption CMOS ICs with built-in crystal oscillator and  
divider circuits.  
Oscillation Frequency:  
Divider Ratio:  
Output:  
4MHz to 30MHz (Fundamental)  
20MHz to 125MHz (3rd Overtone)  
Selectable from f0/1, f0/2, f0/4, f0/8.  
( f0/2, f0/4, f0/8 are fundamental only)  
3-State  
For fundamental oscillation, output is selectable from any one  
of the following values for f0 : f0/1, f0/2, f0/4, f0/8.  
With oscillation capacitors and a feedback resistor built-in, it  
is possible to configure a stable fundamental oscillator or 3rd  
overtone oscillator using only an external crystal.  
Also available is an external oscillation capacitor / external  
oscillation feedback resistor type which makes oscillation  
frequency control possible.  
Operating Voltage Range: 3.3V ± 10%, 5.0V ± 10%  
Low Power Consumption: Stand -by function included  
Selectable from C/E type and O/E type  
Chip Size 1.3 × 0.8 mm  
SOT-26 mini mold  
Chip Form:  
The XC2164 series are integrated into SOT-26 packages.  
The series is also available in chip form.  
Ultra Small Package:  
PIN CONFIGURATION  
PIN ASSIGNMENT  
PIN NUMBER  
PIN NAME  
FUNCTION  
6
5
4
1
INH  
Q0  
SS  
1
2
3
4
5
6
Q0  
VSS  
XT  
Clock Output  
Ground  
2
V
VDD  
Crystal Oscillator Connection (Output)  
Crystal Oscillator Connection (Input)  
Power Supply  
3
XT  
XT  
XT  
VDD  
INH  
Stand-by Control*  
SOT-26 (TOP VIEW)  
* Stand-by control pin has a pull-up resistor built-in.  
/INH, Q0 PIN FUNCTION  
/INH  
Q0  
"H" or OPEN  
"L"  
Clock Output  
High Impedance  
BLOCK DIAGRAM  
Q
O
V
DD  
QO  
VDD  
Cg  
Cd  
Rf  
Rup  
Rup  
1/2  
1/2  
1/2  
1/2  
1/2  
1/2  
XT  
XT  
/XT  
/XT  
VSS  
V
SS  
/INH  
/INH  
Built-in oscillation capacitors, oscillation feedback resistor  
External oscillation capacitors, oscillation feedback resistor  
Semiconductor Ltd.  
1
ICs for use with Crystal Oscillators  
XC2164 Series  
ORDERING INFORMATION  
XC2164123456  
DESIGNATOR  
DESIGNATOR  
SYMBOL  
DESCRIPTION  
SYMBOL  
1
DESCRIPTION  
Ratio Divider & Stand-By Mode  
Duty Level  
A
B
C
D
K
L
3
f0/1  
f0/2  
f0/4  
f0/8  
f0/1  
Chip Enable  
Chip Enable  
Chip Enable  
Chip Enable  
Output Enable  
CMOS (VDD/2)  
Note : TTL : Fundamental 4MHz to 30MHz  
Recommended Frequency Range & Rf, Cg, Cd values  
Built-in Type  
Built-in Type  
(3rd O/T)  
=refer to table 1  
1
2
4
(Fundamental) =refer to table 2  
f0/2  
f0/4  
f0/8  
Output Enable  
Output Enable  
Output Enable  
M
N
Package  
5
6
Note : f0/2, f0/4, f0/8 are fundamental only  
C
M
R
L
Chip Form  
SOT-26  
Embossed Tape: Standard Feed  
Embossed Tape: Reverse Feed  
Chip Tray  
5
Fixed Number  
T
W
Wafer  
Table 1: Built-in Type (3rd O/T)  
SYMBOL  
Frequency Range  
Rf  
(k)  
9.0  
6.5  
5.0  
3.5  
2.8  
2.5  
2.2  
2.0  
2.3  
Cg  
Cd  
3.3V ± 10%  
5.0V ± 10%  
20MHz to 30MHz  
30MHz to 40MHz  
40MHz to 50MHz  
50MHz to 65MHz  
65MHz to 80MHz  
80MHz to 95MHz  
95MHz to 110MHz  
110MHz to 125MHz  
-
(pF)  
21.5  
20.0  
16.0  
14.0  
12.5  
10.0  
8.0  
(pF)  
21.5  
20.0  
16.0  
14.0  
12.5  
10.0  
8.0  
A
B
C
D
E
F
H
K
L
-
20MHz to 30MHz  
30MHz to 40MHz  
40MHz to 50MHz  
50MHz to 65MHz  
65MHz to 80MHz  
80MHz to 95MHz  
95MHz to 110MHz  
110MHz to 125MHz  
7.0  
7.0  
5.5  
5.5  
Table 2 : Built-In Type (Fundamental)  
Frequency Range  
Rf (*)  
Cg  
Cd  
SYMBOL  
(M)  
3.3V ± 10%  
5.0V ± 10%  
(pF)  
(pF)  
3.5  
7.0  
3.5  
7.0  
(*) Rf=3.5M@VDD=5.0V Operation  
M, V  
T
4MHz to 30MHz  
4MHz to 30MHz  
35.0  
20.0  
35.0  
20.0  
Rf=7.0M@VDD=3.3V Operation  
4MHz to 30MHz  
4MHz to 30MHz  
Semiconductor Ltd.  
2
ICs for use with Crystal Oscillators  
XC2164 Series  
PACKAGING INFORMATION  
SOT-26  
PAD LAYOUT  
PAD DIMENSIONS  
unit [µm]  
Y
PAD DIMENSIONS  
(650,400)  
PIN NUMBER  
PIN NAME  
FUNCTION  
X
Y
6
4
3
1
2
Q0  
Clock Output  
Ground  
514  
222  
-264  
-264  
5
1
X
VSS  
Crystal Oscillator  
Connection (Output)  
2
3
4
XT  
XT  
-450  
-450  
-264  
264  
(-650,-400)  
Chip Size  
Crystal Oscillator  
Connection (Input)  
1.3×0.8 mm  
Chip Thickness 280 ± 20µ  
5
6
VDD  
INH  
Power Supply  
514  
47  
27  
Pad Aperture  
100 × 100 µ  
Stand-by Control*  
264  
* Stand-by control pin has a pull-up resistor built-in.  
MARKING RULE  
1Represents product series : XC2164 series  
6
5
4
2Represents divider ratio  
<Chip Enable>  
1 2 3 4  
MARK  
RATIO  
f0/1  
MARK  
RATIO  
f0/4  
A
B
C
D
1
2
3
f0/2  
f0/8  
* B,C,D : fundamental only.  
<Output Enable>  
SOT-26 (TOP-VIEW)  
MARK  
RATIO  
f0/1  
MARK  
RATIO  
f0/4  
K
L
M
N
f0/2  
f0/8  
* L,M,N : fundamental only.  
3Represents recommended frequency & Rf, Cg & Cd values  
*) Please refer to the ordering information table above.  
4Represents the assembly lot no.  
(Based on internal standards.)  
Semiconductor Ltd.  
3
ICs for use with Crystal Oscillators  
XC2164 Series  
July 30, 2003 Ver. 5  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
Supply Voltage  
Input Voltage  
SYMBOL  
VDD  
CONDITIONS  
UNITS  
Vss - 0.3 to Vss + 7.0  
Vss - 0.3 to VDD + 0.3  
V
V
VIN  
Continuous Total Power  
Dissipation  
Pd  
250*  
mW  
OC  
Operating Ambient  
Temperature  
Topr  
Tstg  
-40 ~ +85  
OC  
OC  
-65 ~ +150 (Chip Form)  
-55 ~ +125 (SOT-26)  
Storage Temperature  
*When implemented on a glass epoxy PCB (SOT26 package)  
ELECTRICAL CHARACTERISTICS  
XC2164A51M, T, V Fundamental  
5.0V Operation (unless otherwise stated, VDD=5.0V, No Load, Ta=30 ~ + 80OC)  
PARAMETER  
SYMBOL  
VDD  
CONDITIONS  
MIN.  
4.5  
TYP.  
5.0  
MAX.  
5.5  
UNITS  
V
Operating Supply Voltage  
"H" Level Input Voltage  
"L" Level Input Voltage  
"H" Level Output Voltage  
"L" Level Output Voltage  
VIH  
VIL  
2.4  
V
V
V
V
0.4  
VOH  
VOL  
CMOS : VDD -= 4.5V, IOH= - 16mA  
CMOS : VDD = 4.5V, IOH=16mA  
3.9  
4.2  
0.3  
11  
11  
5
0.4  
( 15 )  
( 15 )  
( 8 )  
( 8 )  
2.0  
/INH=Open, Q0=Open  
f=30MHz  
XC2164A51M, V  
Consumption Current 1  
Consumption Current 2  
IDD1  
IDD2  
mA  
XC2164A51T  
XC2164A51M, V  
XC2164A51T  
/INH= " L ", Q0=Open  
f=30MHz  
µA  
5
MΩ  
kΩ  
Input pull up resistance 1  
Input pull up resistance 2  
Rup1  
Rup2  
/INH="L"  
0.5  
25  
1.0  
50  
35  
20  
35  
20  
3.5  
/INH=0.7VDD  
100  
XC2164A51M, V  
XC2164A51T  
Cg  
Cd  
( * )  
( * )  
Internal Oscillation Capacitance  
pF  
XC2164A51M, V  
XC2164A51T  
MΩ  
µA  
Internal Oscillation Feedback Resistance  
Output Disable Leakage Current  
Rf  
IOZ  
/INH="L"  
10  
note 1 : the values for Cg, Cd are the designed values.  
3.3V Operation (unless otherwise stated, VDD=3.3V, No Load, Ta=30 ~ + 80OC)  
XC2164A51M Fundamental  
PARAMETER  
SYMBOL  
VDD  
VIH  
CONDITIONS  
MIN.  
2.97  
2.4  
TYP.  
3.30  
MAX.  
3.63  
UNITS  
Operating Supply Voltage  
"H" Level Input Voltage  
"L" Level Input Voltage  
"H" Level Output Voltage  
"L" Level Output Voltage  
V
V
V
V
V
VIL  
0.4  
VOH  
VOL  
CMOS : 2.97V, IOH= - 8mA  
CMOS : 2.97V, IOH=8mA  
2.5  
0.4  
( 8 )  
( 6.5 )  
( 4 )  
( 4 )  
4.0  
/INH=Open, Q0=Open  
XC2164A51M, V  
XC2164A51T  
5
4
Consumption Current 1  
Consumption Current 2  
IDD1  
IDD2  
mA  
f=30MHz  
/INH= " L ", Q0=Open  
f=30MHz  
XC2164A51M, V  
XC2164A51T  
2
µA  
2
MΩ  
kΩ  
Input pull up resistance 1  
Input pull up resistance 2  
Rup1  
Rup2  
/INH="L"  
/INH=0.7VDD  
XC2164A51M, V  
1.0  
35  
2.0  
70  
35  
20  
35  
20  
7.0  
140  
Cg  
Cd  
( * )  
( * )  
XC2164A51T  
XC2164A51M, V  
XC2164A51T  
Internal Oscillation Capacitance  
pF  
MΩ  
µA  
Internal Oscillation Feedback Resistance  
Output Diable Leakage Current  
Rf  
IOZ  
/INH="L"  
10  
* note 1 : the values for Cg, Cd are the designed values.  
Semiconductor Ltd.  
4
ICs for use with Crystal Oscillators  
XC2164 Series  
ELECTRICAL CHARACTERISTICS (Continued)  
XC2164A51T, V Fundamental  
3.3V Operation (unless otherwise stated, VDD=3.3V, No Load, Ta=30 ~ + 80OC)  
PARAMETER  
SYMBOL  
VDD  
VIH  
CONDITIONS  
MIN.  
2.5  
TYP.  
3.30  
MAX.  
3.63  
UNITS  
Operating Supply Voltage  
"H" Level Input Voltage  
"L" Level Input Voltage  
"H" Level Output Voltage  
"L" Level Output Voltage  
V
V
V
V
V
2.4  
VIL  
0.4  
VOH  
VOL  
CMOS : 2.97V, IOH= - 8mA  
CMOS : 2.97V, IOH=8mA  
2.5  
0.4  
( 8 )  
( 6.5 )  
( 4 )  
( 4 )  
4.0  
/INH=Open, Q0=Open  
XC2164A51M, V  
XC2164A51T  
5
4
Consumption Current 1  
Consumption Current 2  
IDD1  
IDD2  
mA  
f=30MHz  
/INH= " L ", Q0=Open  
f=30MHz  
XC2164A51M, V  
XC2164A51T  
2
µA  
2
MΩ  
kΩ  
Input pull up resistance 1  
Input pull up resistance 2  
Rup1  
Rup2  
/INH="L"  
/INH=0.7VDD  
XC2164A51M, V  
1.0  
35  
2.0  
70  
35  
20  
35  
20  
7.0  
140  
Cg  
Cd  
( * )  
( * )  
XC2164A51T  
XC2164A51M, V  
XC2164A51T  
Internal Oscillation Capacitance  
pF  
MΩ  
µA  
Internal Oscillation Feedback Resistance  
Output Diable Leakage Current  
Rf  
IOZ  
/INH="L"  
10  
* note 1 : the values for Cg, Cd are the designed values.  
Comparative Chart of Oscillation Frequency vs. Supply Voltage, and Negative Resistance Value (The designed value when 300MHz Crystal is used.)  
OSCILLATION FREQUENCY vs. SUPPLY VOLTAGE  
NEGATIVE RESISTANCE VALUE  
SYMBOL  
VDD = 3.3 V, ±10%  
± 4.3 ppm  
VDD = 5.0 V, ±10%  
± 4.5 ppm  
VDD = 3.3V  
- 130 Ω  
VDD = 5.0V  
- 220 Ω  
M
V
T
± 1.2 ppm  
± 2.1 ppm  
- 150 Ω  
- 250 Ω  
± 9.4 ppm  
± 7.0 ppm  
- 660 Ω  
- 760 Ω  
Semiconductor Ltd.  
5
ICs for use with Crystal Oscillators  
XC2164 Series  
ELECTRICAL CHARACTERISTICS (Continued)  
XC2164A51A ~ XC2164A51L 3rd Overtone  
5.0 Operation (Unless otherwise stated, VDD=5.0V, No Load, Ta=30 ~ + 80OC)  
PARAMETER  
SYMBOL  
VDD  
VIH  
CONDITIONS  
MIN  
4.5  
TYP  
5.0  
MAX  
5.5  
UNITS  
Operating Supply Voltage  
"H" Level Input Voltage  
"L" Level Input Voltage  
"H" Level Output Voltage  
"L" Level Output Voltage  
V
V
V
V
V
2.4  
VIL  
0.4  
VOH  
VOL  
CMOS : VDD = 4.5V, IOH= - 16mA  
CMOS : VDD = 4.5V, IOH=16mA  
XC2164A51A, f0=30MHz  
3.9  
4.2  
0.3  
0.4  
(23)  
(23)  
(26)  
(32)  
(32)  
(40)  
(40)  
(40)  
(8)  
17.0  
17.0  
19.0  
23.0  
24.0  
30.0  
30.0  
30.0  
5.0  
XC2164A51B, f0=40MHz  
XC2164A51C, f0=55MHz  
/INH = Open, Q0  
= Open  
XC2164A51D, f0=70MHz  
XC2164A51E, f0=85MHz  
XC2164A51F, f0=100MHz  
XC2164A51H, f0=110MHz  
XC2164A51K, f0=125MHz  
Consumption Current 1  
IDD1  
mA  
µA  
MΩ  
kΩ  
Consumption Current 2  
Input Pull Up Resistance 1  
Input Pull Up Resistance 2  
IDD2  
Rup1  
Rup2  
/INH="L", Q0=Open  
/INH="L"  
0.5  
25  
1.0  
2.0  
/INH=0.7VDD  
XC2164A51A  
XC2164A51B  
XC2164A51C  
XC2164A51D  
XC2164A51E  
XC2164A51F  
XC2164A51H  
XC2164A51K  
/INH="L"  
50  
100  
9.0  
6.5  
5.0  
Internal Oscillation Feedback  
Resistance  
3.5  
Rf  
kΩ  
µA  
2.8  
2.5  
2.2  
2.0  
Output Disable Leakage Current  
Ioz  
10  
XC2164A51A ~ XC2164A51L 3rd Overtone  
3.3V Operation (Unless otherwise stated, VDD=3.3V, No Load, Ta=30 ~ + 80OC)  
PARAMETER  
SYMBOL  
CONDITIONS  
MIN  
2.97  
2.4  
TYP  
3.30  
MAX  
3.63  
UNITS  
Operating Supply Voltage  
"H" Level Input Voltage  
"L" Level Input Voltage  
"H" Level Output Voltage  
"L" Level Output Voltage  
VDD  
VIH  
V
V
V
V
V
VIL  
0.4  
VOH  
VOL  
CMOS : VDD = 2.97V, IOH= - 8mA  
CMOS : VDD = 2.97V, IOH=8mA  
XC2164A51B, f0=30MHz  
2.5  
0.4  
(7)  
4.5  
5.0  
8.0  
8.5  
9.5  
10.0  
10.5  
2.0  
2.0  
70  
XC2164A51C, f0=40MHz  
(8)  
XC2164A51E, f0=70MHz  
(13)  
(13)  
(15)  
(15)  
(15)  
(4)  
/INH = Open, Q0  
= Open  
Consumption Current 1  
IDD1  
mA  
XC2164A51F, f0=85MHz  
XC2164A51H, f0=100MHz  
XC2164A51K, f0=110MHz  
XC2164A51L, f0=125MHz  
µA  
MΩ  
kΩ  
Consumption Current 2  
Input Pull Up Resistance 1  
Input Pull Up Resistance 2  
IDD2  
Rup1  
Rup2  
/INH="L", Q0=Open  
/INH="L"  
1.0  
35  
4.0  
/INH=0.7VDD  
XC2164A51A  
XC2164A51B  
XC2164A51C  
XC2164A51D  
XC2164A51E  
XC2164A51F  
XC2164A51H  
XC2164A51K  
/INH="L"  
140  
6.5  
5.0  
3.5  
2.8  
2.5  
2.2  
2.0  
2.3  
Internal Oscillation Feedback  
Resistance  
Rf  
kΩ  
µA  
Output Disable Leakage Current  
Ioz  
10  
Semiconductor Ltd.  
6
ICs for use with Crystal Oscillators  
XC2164 Series  
ELECTRICAL CHARACTERISTICS (Continued)  
XC2164A51D  
PARAMETER  
3.3V Operation (Unless otherwise stated, VDD=3.3V, Oscillation Frequency f0=48MHz, No Load, Ta=-30 ~ + 80OC)  
STANDARD VALUES  
CIRCUITS  
SYMBOL  
CONDITIONS  
UNITS  
MIN  
TYP  
3.30  
MAX  
3.63  
Operating Voltage  
'H' Level Input Voltage  
'L' Level Input Voltage  
'H' Level Output Voltage  
'L' Level Output Voltage  
Supply Current 1  
VDD  
VIH  
2.70  
2.4  
V
V
1
1
2
2
3
3
4
4
VIL  
0.4  
V
VOH  
VOL  
IDD1  
IDD2  
Rup1  
Rup2  
CMOS : 2.97V, IOH = - 8mA  
CMOS : 2.97V, IOH = 8mA  
2.5  
V
0.4  
V
/INH=Open, Q0=Open  
XC2164A51D, F0=55MHz  
6.5  
2.0  
2.0  
70  
(10)  
mA  
µA  
MΩ  
kΩ  
Supply Current 2  
/INH = 'L', Q0=Open  
/INH = 'L'  
Input Pull-Up Resitance 1  
1.0  
35  
4.0  
Input Pull-Up Resitance 2  
Internal Oscillation Feedback  
Resistance  
/INH = 0.7VDD  
140  
Rf  
XC2164A51D  
/INH = 'L'  
3.5  
kΩ  
µA  
5
6
Output Disable Leakage Current  
Ioz  
10  
SWITCHING CHARACTERISTICS  
XC2164A51M, T, V Fundamental  
(Unless otherwise stated, VDD=3.3V or 5.0V, No Load, Ta=30 ~ + 80OC)  
PARAMETER  
SYMBOL  
tr  
CONDITIONS  
MIN  
TYP  
1.5  
MAX  
UNITS  
ns  
CMOS: CL=15pF 0.1VDD0.9VDD  
Output Rise Time (note 1)  
Output Fall Time (note 1)  
Output Duty Cycle  
TTL : Load=10TTL, 0.4V 2.4V  
CMOS: CL=15pF 0.9VDD0.1VDD  
TTL : Load=10TTL, 2.4V 0.4V  
CMOS: CL=15pF @ 0.5VDD  
TTL : Load=10TTL, 1.4V  
1.5  
1.5  
1.5  
ns  
ns  
tf  
ns  
45  
45  
55  
55  
%
DUTY  
%
note 1 : the values for tr, tf are the designed values.  
XC2164A51A ~ XC2164A51L 3rd Overtone  
(Unless otherwise stated, VDD=3.3V or 5.0V, No Load, Ta=30 ~ + 80OC)  
PARAMETER  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
Output Rise Time (note 1)  
tr  
tf  
1.5  
ns  
CMOS: CL=15pF 0.1VDD0.9VDD  
Output Fall Time (note 1)  
Output Duty Cycle  
1.5  
ns  
%
CMOS: CL=15pF 0.9VDD0.1VDD  
DUTY  
CMOS: CL=15pF @ 0.5VDD  
45  
55  
note 1 : the values for tr, tf are the designed values.  
Semiconductor Ltd.  
7
ICs for use with Crystal Oscillators  
XC2164 Series  
SWITCHING WAVEFORMS  
Switching Time CMOS Output  
0.9VDD  
0.9VDD  
0.1VDD  
0.1VDD  
tr  
tf  
TTL Output  
2.4V  
2.4V  
0.4V  
0.4V  
tr  
tf  
Duty Cycle  
CMOS Output  
DUTY measure level  
0.5VDD  
TW  
T
DUTY =(TW/T) X100 (%)  
TTL Output  
DUTY measure level  
1.4V  
TW  
T
DUTY=(TW/T) x 100 (%)  
Semiconductor Ltd.  
8

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