UCC24650DBVR [TI]
用于快速瞬态初级侧调节的 200V 唤醒监控器 | DBV | 5 | -40 to 125;型号: | UCC24650DBVR |
厂家: | TEXAS INSTRUMENTS |
描述: | 用于快速瞬态初级侧调节的 200V 唤醒监控器 | DBV | 5 | -40 to 125 监控 光电二极管 |
文件: | 总27页 (文件大小:827K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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UCC24650
ZHCSDB6 –FEBRUARY 2015
UCC24650 用于快速瞬态 PSR 的 200V 唤醒监视器
1 特性
3 说明
1
•
•
•
•
•
•
•
•
具有出色的负载瞬态性能和零待机功耗
UCC24650 是一款易于使用的二次侧电压监视器,可
定期测量其自身的 VDD 电压。 当相对上一读数存在
3% 浮动时,会向接收一次侧稳压 (PSR) 控制器发送
唤醒警报信号。 该器件功耗较低,有助于在许多应用
中实现小于 5mW 的零功耗待机损耗。
实现最小输出电容,以降低 ΔVOUT
无需外部元件
<50μA 的器件电流补偿(典型值)
5V 至 28V 输出监视能力
3% 电压浮动检测(专利申请中)
200V 唤醒开关
接地基准整流器上连接了一个内部 200V 金属氧化物半
导体场效应晶体管 (MOSFET) 开关,可向反激变压器
二次侧绕组提供限流脉冲,从而将信号耦合至一次侧控
制器。 在检测到控制器驱动的开关活动之前,将以
33kHz 的频率重复发送该信号。
可使能和禁用 SR 控制器、继电器控制或其他辅助
电路
•
5 引脚小外形尺寸晶体管 (SOT)-23 封装
2 应用
相对浮动检测功能可将电压调节至 5V 与 28V 之间的
任一电压。唤醒警报功能可实现超低待机频率,从而以
最大限度降低开关损耗,并减小响应重载阶跃所需的输
出电容。 此监视器与能够检测唤醒信号的控制器搭配
使用,例如 UCC28730 PSR 反激控制器。
•
•
< 5mW 零功耗待机应用
面向消费类电子产品的适配器和充电器
智能手机、平板电脑、机顶盒
–
•
•
TV 和监视器电源
家用电器开关电源 (SMPS)
UCC24650 还提供了使能和禁用信号,可用于在无载
条件下控制二次侧电路,从而降低待机功耗。 此类电
路可以是同步整流控制器或继电器驱动器等。
–
冰箱、洗衣机、空调
•
面向照明和家用自动化的工业电源
器件信息(1)
器件型号
UCC24650
封装
SOT-23 (5)
封装尺寸(标称值)
2.92mm × 1.30mm
(1) 要了解所有可用封装,请见数据表末尾的可订购产品附录。
简化应用电路原理图
快速全负载阶跃响应
VBULK
VOUT
IOUT
NP
NS
VSEC
CB1
CB2
COUT
UCC24650
5
3
VDD
1
2
WAKE
VAC
RPL
ENS
GND
UCC28730
5.1 V +/-5% Cout = 540 mF
DA
DS
VAUX
NA
1
VDD
HV
7
6
M1
CVDD
RS1
DRV
CS
Input
Voltage
No-load
Input Power
RLC
2
3
VS
5
115 VRMS
230 VRMS
3.0 mW
3.5 mW
CBC
GND
RS2
RCBC
RCS
4
2-A Load Step
Switching Pulses
1
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
English Data Sheet: SLUSBL6
UCC24650
ZHCSDB6 –FEBRUARY 2015
www.ti.com.cn
目录
7.2 Functional Block Diagram ......................................... 9
7.3 Feature Description................................................. 10
7.4 Device Functional Modes........................................ 16
Application and Implementation ........................ 17
8.1 Application Information............................................ 17
8.2 Typical Application ................................................. 17
Power Supply Recommendations...................... 19
1
2
3
4
5
6
特性.......................................................................... 1
应用.......................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 2
Pin Configuration and Functions......................... 3
Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 4
6.5 Electrical Characteristics........................................... 5
6.6 Timing Requirements ............................................... 6
6.7 Switching Characteristics.......................................... 6
6.8 Typical Characteristics.............................................. 7
Detailed Description .............................................. 9
7.1 Overview ................................................................... 9
8
9
10 Layout................................................................... 20
10.1 Layout Guidelines ................................................. 20
10.2 Layout Example .................................................... 20
11 器件和文档支持 ..................................................... 21
11.1 文档支持................................................................ 21
11.2 商标....................................................................... 21
11.3 静电放电警告......................................................... 21
11.4 术语表 ................................................................... 21
12 机械封装和可订购信息 .......................................... 21
7
4 修订历史记录
日期
修订版本
注释
2015 年 2 月
*
最初发布。
2
Copyright © 2015, Texas Instruments Incorporated
UCC24650
www.ti.com.cn
ZHCSDB6 –FEBRUARY 2015
5 Pin Configuration and Functions
DBV Package
5-Pin SOT-23
Top View
VDD
GND
1
5
WAKE
2
3
ENS
4
N.C.
A. (N.C. = No connection internally)
Pin Functions
PIN
I/O(1)
DESCRIPTION
NAME
NO.
VDD is the bias supply input pin to the controller. This pin is continuously monitored to detect when the VDD
voltage droops by approximately –3% of the previously sampled level. The VDD level is sampled and stored
at the end of each power cycle generated by the PSR. The device is disabled when the VDD voltage is
below the UVLO threshold.
VDD
1
P
The ground pin is both the reference pin for the controller and the low-side return for the WAKE output. Take
special care to return all AC decoupling capacitors as close as possible to this pin and avoid any common
trace length with analog signal return paths.
GND
2
G
Enable secondary circuit is an open-drain MOSFET output that enables a compatible synchronous rectifier
(SR) controller or other secondary-side circuitry. ENS is open during normal operation and becomes low-
impedance to GND when each switching period remains greater than tDISS (177 µs typical) for 63
consecutive cycles. ENS becomes high-impedance again when the switching period operates at less than
tENS (57 µs typical) for 32 cumulative cycles. If the ENS function is not used, this terminal should be
connected to GND.
ENS
N/C
3
4
O
—
The no-connection pin has no internal electrical connection.
WAKE is a multi-function pin which connects to the transformer secondary winding, directly across the
ground-referenced diode or rectifier. As an input, it monitors voltage pulses due to primary-side controller
activity and triggers sampling of the VDD voltage at the end of each power cycle. When the WAKE voltage
falls below 55 mV for >500 ns, the device becomes armed to deliver a power cycle detect (PCD) pulse
internally. When the WAKE voltage subsequently rises above 55 mV, a PCD pulse is delivered to reset the
oscillator, clock the PCD counter, and trigger a new sample of the VDD voltage. If the VDD voltage droops
to 97% of the last sampled value, WAKE is driven as an output. As an output, it injects current into the
transformer winding for 1 µs at a 33-kHz rate until a power cycle is detected. The maximum magnitude that
this current may achieve is limited internally.
WAKE
5
I/O
(1) P = Power, G = Ground, I = Input, O = Output, I/O = Input/Output
Copyright © 2015, Texas Instruments Incorporated
3
UCC24650
ZHCSDB6 –FEBRUARY 2015
www.ti.com.cn
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
UNIT
VCC
–0.5
30
(2)
Input voltage
WAKE
230
V
ENS
–0.5
7
WAKE
10
1
Source current
Sink current
mA
mA
ENS
WAKE
Self-limiting
0.5
ENS
TJ
Operating junction temperature
Lead temperature 0.6 mm from case for 10 s
Storage temperature
–55
–65
150
Tlead
Tstg
260
°C
150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The WAKE pin is normally brought below GND by a system-level rectifier. A negative voltage level is not of concern provided that the
absolute maximum source current limit is observed.
6.2 ESD Ratings
VALUE
±2000
±1500
±1000
UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
All pins except pin 5
Pin 5
Electrostatic
discharge
V(ESD)
V
Charged-device model (CDM), per JEDEC specification
JESD22-C101(2)
All pins
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
28
UNIT
VVDD
VWAKE
VENS
tPCD
TJ
Bias-supply operating voltage
WAKE pin voltage
ENS pin voltage(1)
4.5
V
V
200
6
0
V
Power cycle detect interval
Operating junction temperature range
40
ms
°C
–40
125
(1) The UCC24650 enters a manufacturing test mode when ENS is driven below 0 V and normal operation is impaired during this condition.
If the ENS function is not used, connect ENS to GND to avoid triggering the test mode by noise on an open pin.
6.4 Thermal Information
UCC24650
THERMAL METRIC(1)
DBV
5 PINS
200.2
125.5
35.8
UNIT
RθJA
RθJC(top)
RθJB
ψJT
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
Junction-to-top characterization parameter
Junction-to-board characterization parameter
18.4
ψJB
35.0
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
4
Copyright © 2015, Texas Instruments Incorporated
UCC24650
www.ti.com.cn
ZHCSDB6 –FEBRUARY 2015
6.5 Electrical Characteristics
over operating free-air temperature range, VVDD = 5 V, VWAKE = 5 V, –40°C ≤ TA ≤ 125°C, TJ = TA, (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY INPUT
IVDD28
Supply current
VVDD = 28 V, VWAKE = 28 V
VVDD = 5 V, VWAKE = 5 V
VVDD rising threshold
43
30
63
41
83
52
µA
µA
V
IVDD5
Supply current
VUVLO(on)
VUVLO(hyst)
WAKE INPUT
VPCD
UVLO turn-on voltage at VDD
UVLO hysteresis
3.6
170
4.0
250
4.4
330
VUVLO(on) – VVDD falling threshold
mV
PCD voltage threshold
VWAKE high to low
VWAKE = 0 V
10
55
0
100
0.1
mV
µA
IWAKE
Input bias current, out of pin
Input leakage current, into pin,
cool
(1)
IWAKE(lkg)cool
VWAKE = 200 V, -40°C ≤ TJ ≤ 85°C
VWAKE = 200 V, 85°C ≤ TJ ≤ 125°C
0
0
0.2
3
µA
µA
Input leakage current, into pin,
hot
(1)
IWAKE(lkg)hot
WAKE-UP FUNCTION
Drop in VVDD following a power-cycle
detect by 40 ms, VVDD falling from 5 V,
dv/dt = –250 V/s, –40°C ≤ TJ ≤ 85°C
Droop threshold, over cool
temperature range
(1) (2)
ΔVVDD5(cool)
–2.30%
–1.50%
–2.3%
–2.77%
–2.74%
–2.7%
–3.20%
–4.0%
–3.2%
Drop in VVDD following a power-cycle
detect by 40 ms, VVDD falling from 5 V,
dv/dt = –250 V/s, 85°C ≤ TJ ≤ 125°C
Wake-up droop threshold, over
hot temperature range
(1) (2)
ΔVVDD5(hot)
Drop in VVDD following a power-cycle
detect by 40 ms, VVDD falling from 28
V, dv/dt = –250 V/s
Wake-up droop threshold, over
full temperature range
(1) (2)
ΔVVDD28
Wake-up drive current, room
temperature
IWAKE(on)25
IWAKELMT
VWAKE = 4 V, TJ = 25°C
20
35
27
48
mA
mA
Wake-up current limit
VVDD = 28 V, VWAKE = 28 V
60
ENABLE SECONDARY CIRCUIT FUNCTION
IENS(lkg)
ENS switch leakage current
ENS switch on-resistance
VENS = 5 V, off-state
0
0.1
5.0
µA
RENS(RDS(on))
IENS = 100 µA, on-state
1.3
2.7
kΩ
(1) Device parameter characterized during development. Not production tested, except at 25°C.
(2) For droop threshold at higher dv/dt, see Typical Characteristics.
Copyright © 2015, Texas Instruments Incorporated
5
UCC24650
ZHCSDB6 –FEBRUARY 2015
www.ti.com.cn
6.6 Timing Requirements
over operating free-air temperature range, VVDD = 5 V, VWAKE = 5 V, –40°C ≤ TA ≤ 125°C, TJ = TA, (unless otherwise noted)
MIN
NOM
MAX
650
40
UNIT
ns
tPCD(min)
tSW(max)
PCD minimum time for VWAKE < VPCD
350
500
PCD maximum period for ΔVVDD
ms
6.7 Switching Characteristics
over operating free-air temperature range, VVDD = 5 V, VWAKE = 5 V, –40°C ≤ TA ≤ 125°C, TJ = TA, (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
WAKE-UP FUNCTION
tWAKE
Wake-up pulse width
ΔVVDD ≥ –5% after PCD
ΔVVDD ≥ –5% after PCD
0.7
21
1
1.3
39
µs
µs
tWAKE(rep)
Wake-up repeat period
30
ENABLE SECONDARY CIRCUIT FUNCTION
(1)
tENS
Qualifying tSW to enable secondary circuit
Cumulative cycles to enable secondary circuit
Qualifying tSW to disable secondary circuit
Consecutive cycles to disable secondary circuit
WAKE input toggling
tSW < tENS
40
32
57
74
µs
NENS
cycles
µs
(1)
tDISS
NDISS
WAKE input toggling
tSW > tDISS
124
63
177
230
cycles
(1) By design, the ratio of tENS to tDISS remains within ±10% of typical, over all conditions. Not production tested.
6
Copyright © 2015, Texas Instruments Incorporated
UCC24650
www.ti.com.cn
ZHCSDB6 –FEBRUARY 2015
6.8 Typical Characteristics
VVDD = 5 V, VWAKE = 5 V, TA = 25°C, TJ = TA, (unless otherwise noted)
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
VDD = 28 V
VDD = 18 V
VDD = 5 V
0
5
10
15
20
25
30
-50
-25
0
25
50
75
100
125
150
Bias Supply Voltage (V)
Temperature (°C)
D001
D002
Figure 1. Bias Supply Current vs Bias Supply Voltage
Figure 2. Bias Supply Current vs Temperature
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
5
4
3
2
1
0
UVLO Turn-On Threshold
UVLO Turn-Off Threshold
VDD = 28 V
VDD = 5 V
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Temperature (°C)
Temperature (°C)
D003
D004
dv/dt = 250 V/s
Figure 3. UVLO Thresholds vs Temperature
Figure 4. Droop Detection Threshold vs Temperature
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-1.5
VDD = 28 V
VDD = 5 V
-2.0
-2.5
-3.0
-3.5
-4.0
dv/dt = 250 V/s
dv/dt = 3700 V/s
0
5
10
15
20
25
30
100
200 300 500 7001000
20003000 5000
10000
Bias Supply Voltage (V)
VDD Voltage-Droop dv/dt (V/s)
D005
D006
Figure 5. Droop Detection Threshold vs Bias Voltage
Figure 6. Droop Detection Threshold vs Droop dv/dt
Copyright © 2015, Texas Instruments Incorporated
7
UCC24650
ZHCSDB6 –FEBRUARY 2015
www.ti.com.cn
Typical Characteristics (continued)
VVDD = 5 V, VWAKE = 5 V, TA = 25°C, TJ = TA, (unless otherwise noted)
60
50
40
30
20
10
0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
VWAKE = 200 V
VWAKE
VWAKE
=
=
28 V
5 V
Limited by RDS(on)
VWAKE = 200 V
VWAKE
VWAKE
=
=
28 V
4 V
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Temperature (°C)
Temperature (°C)
D007
D008
No external series resistance
Figure 7. WAKE Current Limit vs Temperature
Figure 8. WAKE Leakage Current vs Temperature
5
4
3
2
1
0.100
0.090
0.080
0.070
0.060
0.050
0.040
0.030
0.020
0.010
0.000
VENS = 5 V
VENS = 3 V
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Temperature (°C)
Temperature (°C)
D009
D010
Figure 9. ENS On-Resistance vs Temperature
Figure 10. ENS Leakage Current vs Temperature
8
Copyright © 2015, Texas Instruments Incorporated
UCC24650
www.ti.com.cn
ZHCSDB6 –FEBRUARY 2015
7 Detailed Description
7.1 Overview
The UCC24650 is a voltage monitor designed to alert a companion primary-side controller device when the
monitor detects a relative droop of approximately 3% on its VDD input. Commonly known as a wake-up device,
the UCC24650 is normally used in isolated-flyback power supply applications using primary-side regulation
(PSR). Because the PSR controller may operate at very-low frequencies during light-load or no-load conditions, it
cannot detect a sudden load step that may occur between power cycles and the output voltage may fall out of
regulation. The UCC24650 can detect the voltage droop and wake-up a compatible PSR controller to increase its
switching frequency before the output falls too low. This action significantly reduces the amount of output
capacitance needed to achieve an acceptable transient response.
At the end of each power cycle delivered by the PSR controller, the UCC24650 droop monitor refreshes an
internally stored voltage scaled to 97% of the VDD voltage. If the monitor detects a droop of VDD to the level of
the stored voltage, the WAKE signal is connected to GND by an internal low-impedance switch. The WAKE
signal transmits a current pulse across the isolation transformer to a compatible PSR controller, such as the
UCC28730, capable of detecting the wake-up signal on the primary side of the transformer.
The UCC24650 is also capable of disabling a compatible SR controller, such as the UCC24610, during light-load
conditions to minimize standby power. The ENS output signal is driven low after a fixed sustained count of low-
frequency power pulses, and can re-enable the SR controller after a cumulative count of 32 higher-frequency
power pulses. The ENS output may also be used to drive other secondary circuitry compatible with the ENS
operating parameters.
7.2 Functional Block Diagram
2.6 µs pulse
Power
WAKE
5
Cycle
PCD
Detect
Enable
1
VDD
Transient
Detector
R R S
Current
Limit
Q
3R
EN
Sample
and Hold
Oscillator
PULSE
97R
UVLO
1 µs width, 30 µs period
Enable
ENS
3
H Standby
L Run
PCD Counter
PCD
Enable
2
GND
Copyright © 2015, Texas Instruments Incorporated
9
UCC24650
ZHCSDB6 –FEBRUARY 2015
www.ti.com.cn
7.3 Feature Description
7.3.1 UVLO Block
The UCC24650 device can operate over a bias supply voltage range from approximately 4 to 28 V. All functions
are disabled and bias supply current is quiescent until the UVLO turn-on threshold is exceeded. When enabled,
all functions remain operational until the VDD voltage falls below the UVLO turn-off threshold.
To ensure that wake-up pulses can be successfully driven, make sure the output voltage droop at VDD during a
load-step does not fall below the maximum UVLO turn-off threshold before at least one wake-up pulse can be
issued. This imposes a practical limit on the lowest nominal no-load voltage allowable at VDD before the
maximum load step is applied.
7.3.2 PCD
After the UCC24650 has been turned on and enabled, the WAKE pin is used to detect the power-cycle
waveforms at the flyback transformer secondary winding. This winding voltage can be at wide-ranging levels, but
the PCD block arms the sample-and-hold (S&H) block to acquire a reference voltage reading at VDD when
certain criteria are met. The PCD block triggers the S&H block at the end of the demagnetization time, tDM
,
provided that the voltage at WAKE has remained below the VPCD threshold for longer than tPCD(min), to ensure
that the sampled voltage is free of transient deviations and noise. Consequently, this imposes a minimum
demagnetization-time constraint on the flyback design to provide adequate signal for the PCD function.
Figure 11 illustrates the behavior of the device for power-cycles that do meet the criteria and for those that do
not. The wake-up reference voltage, which is stored internally as approximately 97% of the sampled VDD
voltage, is updated at every PCD pulse to change proportionally with the changes in output voltage. Disturbances
at the WAKE input which do not meet the PCD criteria do not affect the stored reference voltage.
VWAKE
VPCD
tDM > tPCD(min)
tDM < tPCD(min)
PCD
VOUT
(ripple)
0.97VS&H
A. Not to scale
Figure 11. Timing Diagram of Internal PCD Signal
10
Copyright © 2015, Texas Instruments Incorporated
UCC24650
www.ti.com.cn
ZHCSDB6 –FEBRUARY 2015
Feature Description (continued)
VNOM
VOUT
0.97 VNOM
IOUT
IWAKE
Wake-up pulse generated by
sinking current out of VSEC
VSEC
VAUX
Wake-up signal detected by primary
controller; switching initiated
A. Not to scale
Figure 12. Simplified Timing Diagram of System Behavior
7.3.3 Sample, Hold, and Transient Detector
The sample-and-hold function (S&H) monitors the VDD voltage, samples that voltage during a PCD pulse, and
holds the buffered sample constant during the interval between power cycles. The held sample is scaled to about
97% of the external voltage to serve as a –3% droop-detection threshold reference voltage. The external VDD
voltage is continually compared to the internal droop reference by the transient detection comparator, and a
wake-up signal is triggered if VDD falls below the droop-reference voltage.
The S&H droop-reference voltage is refreshed at the end of each power cycle detected by the PCD function, to
track minor changes in output voltage. The droop-reference voltage is held accurately for PCD intervals less than
tSW(max), but may drift either higher or lower during longer intervals.
Copyright © 2015, Texas Instruments Incorporated
11
UCC24650
ZHCSDB6 –FEBRUARY 2015
www.ti.com.cn
Feature Description (continued)
7.3.4 Wake Pulse Generator and WAKE Switch
The WAKE pin not only functions as a PCD input as described in PCD, but also serves as an output driver to
accomplish the wake-up function. An integrated N-channel MOSFET switch is connected between WAKE and
GND and is driven by the WAKE-pulse oscillator when the conditions for wake-up are met (see Functional Block
Diagram). Each wake-up pulse is of short duration to limit internal dissipation and is repeated periodically until a
PSR-driven power cycle is detected or until VDD has fallen to the UVLO turn-off threshold.
Figure 13 shows two possible typical system responses. The solid lines indicate the successful wake-up of a
compatible PSR controller from the sleeping or Wait state between low-frequency power cycles. After a load step
causes the output voltage (at VDD) to cross the previously stored reference voltage, the WAKE output drives a
current pulse to the PSR controller which responds with multiple power cycles to restore regulation. At each
power cycle, the reference voltage is refreshed and further WAKE pulses are suppressed. In the case where the
PSR controller does not respond to the first wake-up pulse, the dotted lines indicate that the wake-up pulses are
repeated, the reference voltage is not refreshed, and the output voltage continues to fall.
IWAKE
VOUT
(ripple)
0.97VS&H
(Dotted lines indicate waveforms if
primary-side controller does not
respond to wake-up signal.)
Figure 13. System Response to Wake-Up Signal After Load-Transient Event
In the event that a power cycle occurs during the droop before VOUT has reached the WAKE threshold, the S&H
reference is updated to the VOUT voltage at that moment. This may extend the droop by another 3% before the
WAKE threshold is reached and the condition for a wake-up signal is met, effectively delaying the wake-up as
illustrated by Figure 14 and Figure 15.
12
Copyright © 2015, Texas Instruments Incorporated
UCC24650
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ZHCSDB6 –FEBRUARY 2015
Feature Description (continued)
VNOM
VOUT
0.97 VNOM WAKE Threshold
Power-cycle at low frequency
generated by PSR
IOUT
IWAKE
PCD
Figure 14. Simplified Typical System Response to Wake-Up Signal After Load-Transient Event
VNOM
VOUT
Previous Threshold
~ 0.94 VNOM New Threshold
Power-cycles at low frequency
generated by PSR
IOUT
IWAKE
PCD
Figure 15. Simplified Delayed System Response to Wake-Up Signal After Load-Transient Event
The typical on-state resistance of the WAKE switch is approximately 150 Ω at 25°C and varies with junction
temperature. Consequently, the wake-pulse current capability in low-voltage applications also varies with
temperature (see Figure 7 in the Typical Characteristics). A built-in current limit prevents excess pulse current
and power dissipation in higher-voltage applications.
Copyright © 2015, Texas Instruments Incorporated
13
UCC24650
ZHCSDB6 –FEBRUARY 2015
www.ti.com.cn
Feature Description (continued)
In a typical isolated-flyback PSR topology, the wake-pulse current establishes a signal voltage across the system
impedance, which consists mainly of the parallel combination of the primary magnetizing inductance, LM, and the
switched-node capacitance, CSWN, scaled by the transformer turns-ratio.
In applications with higher output voltages, some rectifier diodes may exhibit high forward voltage drop
characteristics, along with possible additional voltage due to package inductance and stray inductance. This
negative forward voltage is impressed on the WAKE input with respect to GND, as shown in Figure 16.
VOUT
IOUT
ISEC
NP
NS
UCC24650
5 WAKE VDD 1
RWAKE
COUT
VSEC
IWAKE
DS LD
3 ENS
GND 2
RPL
LSTRAY
(LD+STRAY × dISEC+/dt + VF(max)
)
VSEC
dISEC+/dt
ISEC
VOUT
0 A, 0 V
t
t
0 A
±10 mA
(MAX)
IWAKE
Figure 16. High dISEC/dt may Generate Significant IWAKE
.
To avoid exceeding the maximum source-current rating for WAKE (see Absolute Maximum Ratings), a series
resistance may be required to limit the WAKE current. Its value is calculated by Equation 1. However, this
resistance presents additional impedance to the WAKE signal current that can be developed. Do not oversize
RWAKE to avoid depressing the Wake-Up signal level at the PSR detection input. A trade-off between the level of
reverse-current limiting and the WAKE signal drive level may be necessary.
V
F(max) ꢂ LSUMdISECꢂ / dt ꢃ 0.7 V
ꢀ
ꢁ
RWAKE
t
10 mA
where
•
•
VF(max) is the highest forward voltage drop expected.
LSUM is the combined stray and package inductance.
(1)
14
Copyright © 2015, Texas Instruments Incorporated
UCC24650
www.ti.com.cn
ZHCSDB6 –FEBRUARY 2015
Feature Description (continued)
7.3.5 PCD Counter and ENS Switch
Some PSR applications may use an SR in place of the output diode rectifier to improve efficiency. For
applications using the UCC24610 SR controller, the UCC24650 device provides the ENS output which can be
used to enable the SR controller when the switching frequency is high, and disable it when the switching
frequency is very low, to reduce standby power dissipation. Although the ENS function is specifically optimized
for use with the UCC24610 device, it may also be used for other purposes provided the ENS pin is operated
within its specified limits.
The ENS output consists of an open-drain, N-channel MOSFET switch with on-resistance of approximately 2.7
kΩ at 25°C. A PCD counter (see Functional Block Diagram) monitors the time intervals between pulses and
determines whether to turn on or off the ENS switch. At power-up, the ENS switch is off (high-impedance open-
drain state) by default, and remains that way as long as the power-cycle period, tSW, is less than the disable
qualifying interval, tDISS, to keep the SR controller enabled. After tSW > tDISS for a count of at least 63 consecutive
power cycles, the ENS switch is turned on (low-impedance to GND) to disable the SR controller. This disable-
count is reset to zero if any switching cycle period occurs where tSW < tDISS. This consecutive count requirement
ensures that the switching frequency is consistently low enough to justify disabling the SR controller to minimize
its bias power.
There is considerable hysteresis in the qualifying interval timing, so the ENS switch remains on (SR or other
secondary circuit is disabled) until tSW becomes less than the enable qualifying interval, tENS. In other words, the
switching frequency is increasing. When tSW < tENS for 32 cumulative power cycles, the ENS switch is turned off
and the SR controller is enabled. When ENS is in the Low state, the cumulative count allows any number of
switching cycles with tSW > tENS without resetting the count. Figure 17 and Figure 18 show these ENS state
transitions based on the switching period timing and interval count.
VSEC
tSW > tENS
tSW < tENS for NENS
ENS
A. Not to scale
Figure 17. Simplified Timing Diagram of ENS Behavior for Gradual Increase of Load
Only 32 shorter tSW intervals are necessary to re-enable the SR controller to avoid excess rectifier dissipation as
the system load increases. However, these shorter intervals (higher frequency) are not required to be
consecutive, so that ENS is allowed to toggle High eventually, even if the switching frequency is not yet
consistently higher. This method ensures that the SR or other circuitry is not prevented from re-enabling if the
frequency is not consistent due to variable loads.
Copyright © 2015, Texas Instruments Incorporated
15
UCC24650
ZHCSDB6 –FEBRUARY 2015
www.ti.com.cn
Feature Description (continued)
VSEC
tSW < tDISS
tSW > tDISS for NDISS
ENS
A. Not to scale
Figure 18. Simplified Timing Diagram of ENS Behavior for Gradual Decrease of Load
At least 63 consecutive counts of tSW > tDISS are necessary to disable the SR controller, to ensure that random
deviations in tSW do not unnecessarily disrupt normal SR operation. In this manner, the ENS function is heavily
skewed in favor of keeping the SR controller enabled, unless it is consistently operated at a very-low frequency,
particularly during no-load operation. ENS is not affected in the case of a wake-up event, and the count is not
changed. After a wake-up, the switching frequency generally increases quite rapidly, so the ENS switch is turned
off to re-enable the SR controller as soon as the count of tSW < tENS reaches 32. Depending on the previous
cumulative switching period history, the time to re-enable the SR controller may be anywhere between 32
switching cycles and immediate.
7.4 Device Functional Modes
The UCC24650 operates as a voltage monitor in either of two modes: ENS output is High (driver is off), or ENS
output is Low (driver is on). In either mode, when the monitor detects a 3% droop in the VDD voltage, it triggers a
Wake-Up signal on the WAKE pin.
16
Copyright © 2015, Texas Instruments Incorporated
UCC24650
www.ti.com.cn
ZHCSDB6 –FEBRUARY 2015
8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The UCC24650 Wake-Up monitor is intended to be used with the UCC28730 PSR controller in off-line isolated
DCM flyback converters. The UCC24650 signals the UCC28730 that the output voltage has drooped. This allows
the PSR controller to react to a load increase even while operating at extremely-low switching frequencies. This
pair of devices also operates at very-low bias currents to facilitate the achievement of <5 mW of input power
consumption during the no-load operating condition.
8.2 Typical Application
A typical application for the UCC24650 uses the compatible UCC28730 PSR controller to regulate an isolated
low-voltage DC output from a high-voltage AC source. As shown in Figure 19 and Figure 20, the output
rectification can use a ground-referenced diode, or a ground-referenced synchronous rectifier, respectively.
NOTE
These figures are simplified to illustrate the basic application of the UCC24650 and do not
show all of the components and networks needed for an actual converter design.
VBULK
VOUT
IOUT
NP
NS
VSEC
CB1
CB2
COUT
UCC24650
5
3
VDD
1
2
WAKE
VAC
RPL
ENS
GND
UCC28730
DA
DS
VAUX
NA
1
VDD
HV
7
6
M1
CVDD
RS1
DRV
RLC
2
3
VS
CS
5
CBC
GND
RS2
RCBC
RCS
4
Figure 19. Simplified Application With Ground-Referenced Diode
Copyright © 2015, Texas Instruments Incorporated
17
UCC24650
ZHCSDB6 –FEBRUARY 2015
www.ti.com.cn
Typical Application (continued)
VBULK
VOUT
IOUT
NP
NS
VSEC
CB1
CB2
COUT
UCC24650
5
3
VDD
1
2
WAKE
VAC
RPL
ENS
GND
UCC28730
DA
VAUX
NA
UCC24610
1
VDD
HV
7
6
EN
2
5
VCC
4
6
M1
CVDD
RS1
DRV
GND
GATE
M2
RLC
2
3
VS
CS
5
CBC
GND
RS2
RCBC
RCS
4
Figure 20. Simplified Application With Ground-Referenced Synchronous Rectifier
8.2.1 Design Requirements
Among the usual converter design requirements, the UCC24650 is especially suited to aid in achieving fast load-
transient response and extremely-low input standby power. In many cases, the designer can achieve <5 mW of
standby power, often referred to as Zero-Power.
8.2.2 Detailed Design Procedure
There is little design work required to use this device. Most calculations involve verification that the external
conditions remain within the device’s various parameter operating limits.
Major design items to cover are:
•
Ensure sufficient margin between lowest droop expected and the device UVLO threshold. The UVLO
threshold is approximately 3.75 V and the compatible PSR controller usually requires some short time to
respond to the WAKE signal and arrest the load-step droop. The minimum regulation voltage compatible with
the use of this device must account for the anticipated droop plus any additional droop due to threshold reset
and PSR response limitations.
•
Ensure the maximum switching period tSW(max) is not exceeded, or the droop threshold may drift lower or
higher and become inaccurate.
•
•
•
Ensure the system-level VOUT overshoot remains below the device VDD absolute maximum rating.
Ensure the system-level VSEC spike overshoot remains below the device WAKE absolute maximum rating.
Ensure the system switched-node impedance allows sufficient signal amplitude so that the PSR controller is
able to detect it. If necessary, a PNP emitter-follower buffer may be inserted between the WAKE pin and the
secondary winding to boost the wake-up signal current level.
•
Determine WAKE series resistance to limit current out of terminal, if necessary.
18
Copyright © 2015, Texas Instruments Incorporated
UCC24650
www.ti.com.cn
ZHCSDB6 –FEBRUARY 2015
Typical Application (continued)
8.2.3 Application Curves
The following figures indicate the transient response of a 5-V, 10-W flyback converter which receives a pulsed
step-load of 2 A while operating in the no-load standby condition. Figure 24 indicates the no-load standby input
power consumption achieved by this converter over the full AC input range. Zero-Power operation is achieved
while retaining fast transient response to a full load step.
VOUT with 5-V offset
5.1 V ±5% COUT = 540 µF
Output Ripple
214-mV Droop
2-A Load Step
2-A Load Step
Switching Pulses
Switching Pulses
Figure 21. 2-A Load Step During Standby Operation
Figure 22. Transient Response Detail for 2-A Load Step
5
VOUT with 5-V offset
4.5
4
3.5
3
2.5
2
1.5
1
2-A Load Step
0.5
0
85
135
185
235
265
Wake-Up Pulse
Switching Pulses
Input Voltage (VAC
)
D003
Figure 23. Wake-Up Pulse Triggering Response from
UCC28730 Primary-Side Controller
Figure 24. No-Load Input Power Consumption for a 5-V,
10-W Converter
9 Power Supply Recommendations
The VDD pin of the UCC24650 is intended to connect directly to the output voltage of a PSR-flyback converter in
the range of 5 to 28 V. Because the device monitors VDD to detect a 3% droop to trigger the wake-up function,
the converter output voltage should be sufficiently filtered to avoid false trigger from excessive steady-state ripple
voltage, relative to the output voltage. The UCC24650 captures its reference voltage at the end of each flyback
demagnetization time to avoid the influence of ringing and switching noise. Converter output capacitance should
be sufficient to maintain ΔVOUT between switching cycles to less than the droop detection threshold.
Avoid an excessive rate of rise on VDD to ensure correct device operation. Ensure that the dv/dt <0.1 V/µs on
VDD, or the device may not function until power is removed and restored at a slower rate.
Copyright © 2015, Texas Instruments Incorporated
19
UCC24650
ZHCSDB6 –FEBRUARY 2015
www.ti.com.cn
10 Layout
10.1 Layout Guidelines
There are no critical layout requirements. TI recommends to use the usual industry good-practice layout
guidelines and principles.
To increase the reliability and feasibility of the project, TI recommends adhering to the following guidelines for
PCB layout:
•
Connect the WAKE and GND signals close to the output rectifier pads to minimize the effect of high di/dt and
stray inductance on the WAKE pin voltage at the beginning of the flyback demagnetization time. It is not so
important to minimize the WAKE and GND sense track lengths, rather to minimize the inductance between
the two sense points at the rectifier.
•
If ENS is not used, connect it to the GND pin to prevent the ENS input voltage from going below GND due to
possible system noise.
10.2 Layout Example
The partial layout example of Figure 25 demonstrates an effective component and track arrangement for low-
noise operation on a single-layer PCB. Actual board layout must conform to the constraints on a specific design,
so many variations are possible.
SEC
Winding
TRANSFORMER
DOUT
CVDD
RWAKE
VDD
GND
ENS
WAKE
COUT3
RSNUB
CSNUB
To Output ±
COUT1
COUT2
To Output +
Figure 25. UCC24650 Partial Layout Example
20
版权 © 2015, Texas Instruments Incorporated
UCC24650
www.ti.com.cn
ZHCSDB6 –FEBRUARY 2015
11 器件和文档支持
11.1 文档支持
11.1.1 相关文档ꢀ
•
•
《UCC28730 具有 CVCC 和唤醒监视功能的零功耗待机 PSR 反激控制器》,SLUSBL5
《UCC28730EVM-552 EVM 用户指南,使用 UCC28730EVM-552》,SLUUB75
11.2 商标
All trademarks are the property of their respective owners.
11.3 静电放电警告
这些装置包含有限的内置 ESD 保护。 存储或装卸时,应将导线一起截短或将装置放置于导电泡棉中,以防止 MOS 门极遭受静电损
伤。
11.4 术语表
SLYZ022 — TI 术语表。
这份术语表列出并解释术语、首字母缩略词和定义。
12 机械封装和可订购信息
以下页中包括机械封装和可订购信息。 这些信息是针对指定器件可提供的最新数据。 这些数据会在无通知且不对
本文档进行修订的情况下发生改变。 欲获得该数据表的浏览器版本,请查阅左侧的导航栏。
版权 © 2015, Texas Instruments Incorporated
21
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
UCC24650DBVR
UCC24650DBVT
ACTIVE
ACTIVE
SOT-23
SOT-23
DBV
DBV
5
5
3000 RoHS & Green
250 RoHS & Green
NIPDAU
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 125
-40 to 125
U650
U650
NIPDAU
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
Addendum-Page 2
PACKAGE OUTLINE
DBV0005A
SOT-23 - 1.45 mm max height
S
C
A
L
E
4
.
0
0
0
SMALL OUTLINE TRANSISTOR
C
3.0
2.6
0.1 C
1.75
1.45
1.45
0.90
B
A
PIN 1
INDEX AREA
1
2
5
(0.1)
2X 0.95
1.9
3.05
2.75
1.9
(0.15)
4
3
0.5
5X
0.3
0.15
0.00
(1.1)
TYP
0.2
C A B
NOTE 5
0.25
GAGE PLANE
0.22
0.08
TYP
8
0
TYP
0.6
0.3
TYP
SEATING PLANE
4214839/G 03/2023
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Refernce JEDEC MO-178.
4. Body dimensions do not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.25 mm per side.
5. Support pin may differ or may not be present.
www.ti.com
EXAMPLE BOARD LAYOUT
DBV0005A
SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR
PKG
5X (1.1)
1
5
5X (0.6)
SYMM
(1.9)
2
3
2X (0.95)
4
(R0.05) TYP
(2.6)
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:15X
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
METAL
EXPOSED METAL
EXPOSED METAL
0.07 MIN
ARROUND
0.07 MAX
ARROUND
NON SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4214839/G 03/2023
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
EXAMPLE STENCIL DESIGN
DBV0005A
SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR
PKG
5X (1.1)
1
5
5X (0.6)
SYMM
(1.9)
2
3
2X(0.95)
4
(R0.05) TYP
(2.6)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE:15X
4214839/G 03/2023
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
www.ti.com
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Copyright © 2023,德州仪器 (TI) 公司
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