TPSM8D6B24 [TI]
4V 至 16V 输入、双路 25A/单路 50A PMBus® 电源模块;型号: | TPSM8D6B24 |
厂家: | TEXAS INSTRUMENTS |
描述: | 4V 至 16V 输入、双路 25A/单路 50A PMBus® 电源模块 电源电路 |
文件: | 总177页 (文件大小:5474K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TPSM8D6B24
ZHCSON0 –AUGUST 2022
TPSM8D6B24 2.95V 至16V、双路25A 或单路50A、PMBus® 降压电源模块
1 特性
3 说明
• 4.25V 至16V,PVIN 连接至AVIN 与内部的LDO
• 2.95V 至16V,PVIN 和AVIN 双电源,或VDD5 上
的外部偏压范围
• 集成MOSFET、电感器和基本无源器件
• 具有可选内部补偿的平均电流模式控制
• 通过引脚搭接实现的输出电压范围为0.5V 至5.5V
• 0.25V 至5.5V PMBus® VOUT_COMMAND 范围
• 广泛的PMBus 命令集,可遥测VOUT、IOUT 和内核
温度
TPSM8D6B24 是一款高度集成、易于使用的非隔离式
直流/直流降压电源模块。TPSM8D6B24 提供两个25A
独立输出或单个堆叠式两相 50A 输出。 该器件可通过
外部5V 电源对内部的 5V LDO 进行过驱动,以实现低
至2.95V 的较低输入电压范围并提高转换器的效率。
TPSM8D6B24 电源模块使用专有的固定频率电流模式
控制,具有输入前馈和可选的内部补偿元件,可在各种
输出电容下更大限度减小尺寸和提高稳定性。
• 通过内部反馈分压器实现差分遥感,可检测到小于
1% 的VOUT 误差
• -40°C 至+125°C 的结温范围
• 通过PMBus 实现AVS 和裕量调节
• 多功能选择(MSEL) 引脚,采用引脚搭接编程
PMBus 默认值
• 九个可选开关频率范围:275kHz 至1.1MHz
• 频率同步输入和同步输出
• 支持预偏置输出
PMBus 接口具有 1MHz 时钟支持,为转换器配置提供
了便捷且标准化的数字接口,并且实现了对输出电压、
输出电流和内核温度等关键参数的监控。对故障状况的
响应可设置为重新启动、锁存或忽略,具体取决于系统
要求。堆叠器件之间的反向通道通信会启用所有
TPSM8D6B24 转换器,以便为单个输出轨供电以共享
一个地址,从而简化系统软件或固件设计。也可通过
BOM 选择在不进行 PMBus 通信的情况下,配置输出
电压、开关频率、软启动时间和过流故障限制等关键参
数,以支持无程序加电。
• 16mm × 20mm × 4.3mm 59 引脚MOW 封装
• 使用TPSM8D6B24 并借助WEBENCH® Power
Designer 创建定制设计方案
封装信息
封装尺寸(标称值)
器件型号
封装
16.00mm ×
20.00mm
2 应用
TPSM8D6B24
MOW(QFM、59)
• 数据中心交换机、机架式服务器
• 有源天线系统、远程射频和基带单元
• 自动化测试设备、CT、PET 和MRI
• ASIC、SoC、FPGA、DSP 内核和I/O 电压
96
92
88
84
80
76
72
68
64
60
56
52
12 Vin 0.5 Vout 325KHz
12 Vin 0.8 Vout 325KHz
12 Vin 1.0 Vout 550KHz
12 Vin 1.2 Vout 550KHz
12 Vin 1.8 Vout 550KHz
12 Vin 2.5 Vout 1100KHz
12 Vin 3.3 Vout 1100KHz
12 Vin 5.0 Vout 1100KHz
简化版应用
0
5
10
15
20
25
30
35
40
45
50
Output Current (A)
效率
本文档旨在为方便起见,提供有关TI 产品中文版本的信息,以确认产品的概要。有关适用的官方英文版本的最新信息,请访问
www.ti.com,其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SLUSEN7
TPSM8D6B24
ZHCSON0 –AUGUST 2022
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Table of Contents
7.5 Programming............................................................ 34
7.6 Register Maps...........................................................45
8 Application and Implementation................................149
8.1 Application Information........................................... 149
8.2 Typical Application.................................................. 149
8.3 Two-Phase Application........................................... 160
8.4 Power Supply Recommendations...........................166
8.5 Layout..................................................................... 166
9 Device and Documentation Support..........................169
9.1 Device Support....................................................... 169
9.2 接收文档更新通知................................................... 169
9.3 支持资源..................................................................169
9.4 Trademarks.............................................................169
9.5 Electrostatic Discharge Caution..............................169
9.6 术语表..................................................................... 170
10 Mechanical, Packaging, and Orderable
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 5
6.1 Absolute Maximum Ratings ....................................... 5
6.2 ESD Ratings .............................................................. 5
6.3 Recommended Operating Conditions ........................5
6.4 Thermal Information ...................................................6
6.5 Electrical Characteristics ............................................6
6.6 Typical Characteristics..............................................14
7 Detailed Description......................................................17
7.1 Overview...................................................................17
7.2 Functional Block Diagram.........................................17
7.3 Feature Description...................................................18
7.4 Device Functional Modes..........................................33
Information.................................................................. 171
4 Revision History
注:以前版本的页码可能与当前版本的页码不同
DATE
REVISION
NOTES
August 2022
*
Initial Release
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5 Pin Configuration and Functions
17
18
19 20
21
22
23
24
25 26
27
28 29
30
PGND
1
51
50
49
48
47
46
PGND
MSEL2_A
VSEL_A
MSEL2_B
VSEL_B
16
31
VOSNS_A
2
3
45
VOSNS_B
55 PVIN_A
56 PVIN_B
15
32
44
GOSNS/FLWR_B
PGND
GOSNS/FLWR_A
PGND
ADRSEL_A
MSEL1_A
ADRSEL_B
MSEL1_B
14
13
33
34
4
5
43
42
52 PGND
59 PGND
BP1V5_B
57PGND
BP1V5_A
54 PGND
VSHARE_A
VSHARE_B
12
35
6
41
40
39
38
SMB_ALRT_B
PMB_CLK_B
PMB_DATA_B
SMB_ALRT_A
PMB_CLK_A
PMB_DATA_A
BCX_CLK_A
BCX_CLK_B
A
11
36
37
7
8
BCX_DAT_A
PGD/RST_A
10
BCX_DAT_B
PGD/RST_B
53 SW_A
58 SW_B
9
38
39
40
41
9
PGD/RST_B
BCX_DAT_B
PGD/RST_A
BCX_DAT_A
53 SW_A
58 SW_B
PMB_DATA_A
PMB_CLK_A
SMB_ALRT_A
PMB_DATA_B
PMB_CLK_B
SMB_ALRT_B
8
7
10
11
37
36
BCX_CLK_B
BCX_CLK_A
6
12
35
VSHARE_B
MSEL1_B
VSHARE_A
MSEL1_A
54 PGND
57PGND
BP1V5_A
PGND
BP1V5_B
5
4
42
43
13
14
34
33
52 PGND
59 PGND
PGND
ADRSEL_B
ADRSEL_A
GOSNS/FLWR_A
GOSNS/FLWR_B
3
2
44
45
15
16
32
31
VSEL_B
VSEL_A
55 PVIN_A
56 PVIN_B
VOSNS_A
PGND
VOSNS_B
PGND
MSEL2_A
MSEL2_B
1
51
50
49
48
47
46
17
18
19 20
21
22
23
24
25 26
27
28 29
30
图5-1. 59-Pin QFM-MOW Package (Top View)
图5-2. 59-Pin QFM-MOW Package (Bottom View)
表5-1. Pin Functions
Pin
Type(1)
Description
Name
PGND
NO.
1, 4, 17, 23, 30,
43, 46, 49, 52, 54,
57, 59
Power stage ground return. Pins 52, 54, 57, and 59 also act as the thermal pad of the
device.
—
VOSNS_A
2
The positive input of the remote sense amplifier. For a standalone device or a loop
controller device in a multi-phase configuration, connect the VOSNS pin to the output
voltage at the load. For the loop follower device in a multi-phase configuration, the remote
sense amplifier is not required for output voltage sensing or regulation and this pin can be
left floating. If used to monitor another voltage with the phased READ_VOUT command,
VOSNS must be maintained between 0 V and 0.75 V with a < 1-kΩresistor divider due to
the internal resistance to GOSNS, which is connected to BP1V5.
I
I
VOSNS_B
45
GOSNS/FLWR_A
GOSNS/FLWR_B
3
The negative input of the remote sense amplifier for a loop controller device or pull up high
to indicate a loop follower. For a standalone device or a loop controller device in a multi-
phase configuration, connect the GOSNS pin to the ground at the load. For the loop
follower device in a multi-phase configuration, the GOSNS pin must be pulled up to BP1V5
to indicate the device is a loop follower.
44
BP1V5_A
BP1V5_B
5
42
6
Output of the 1.5-V internal regulator for MSEL,VSEL, and ADRSEL pins. No external
bypassing required. Not designed to power other circuits
O
O
SMB_ALRT_A
SMB_ALRT_B
PMB_CLK_A
PMB_CLK_B
PMB_DATA_A
PMB_DATA_B
PGD/RST_A
SMBus alert pin. See the SMBus specification
41
7
I
PMBus CLK pin. See the Current PMBus Specifications.
PMBus DATA pin. See the Current PMBus Specifications.
40
8
I/O
39
9
Open-drain power good or (21h) VOUT_COMMAND RESET#. As determined by user-
programmable RESET# bit in (EDh) MFR_SPECIFIC_29 (MISC_OPTIONS). The default
pin function is an open-drain power-good indicator. When configured as RESET#, an
internal pullup can be enabled or disabled by the PULLUP# bit in (EDh)
MFR_SPECIFIC_29 (MISC_OPTIONS).
I/O
PGD/RST_B
38
BCX_DATA_A
BCX_DATA_B
BCX_CLK_A
BCX_CLK_B
10
37
11
36
I/O
I/O
Data for back-channel communications between stacked devices
Clock for back-channel communications between stacked devices
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表5-1. Pin Functions (continued)
Pin
Name
Type(1)
Description
NO.
12
VSHARE_A
VSHARE_B
MSEL1_A
Voltage sharing signal for multi-phase operation. For a standalone device, the VSHARE pin
must be left floating. VSHARE can by bypassed to AGND with up to 50 pF of capacitance.
I/O
35
13
Connect this pin to a resistor divider between BP1V5and AGND for different options of
switching frequency and internal compensation parameters. See the Programming MSEL1
section.
I
MSEL1_B
ADRSEL_A
ADRSEL_B
34
14
33
Connect this pin to a resistor divider between BP1V5 and AGND for different options of
PMBus addresses and frequency sync (including determination of SYNC pin as SYNCIN or
SYNCOUT function). See the Programming ADRSEL section.
I
I
VSEL_A
VSEL_B
MSEL2_A
15
32
16
Connect this pin to a resistor divider between BP1V5 and AGND for different options of
internal voltage feedback dividers and default output voltage. See Programming VSEL.
Connect this pin to a resistor divider between BP1V5 and AGND for different options of
soft-start time, overcurrent fault limit, and multiphase information. See the Programming
MSEL2 or Programming MSEL2 for a Loop Follower Device (GOSNS Tied to BP1V5)
sections for a loop follower device (GOSNS tied to BP1V5) if GOSNS is tied to BP1V5.
I
MSEL2_B
31
EN/UVLO_A
EN/UVLO_B
PVIN_A
19
25
18
Enable switching as the PMBus CONTROL pin. EN/UVLO can also be connected to a
resistor divider to program input voltage UVLO.
I
I
I
Input power to the power stage. Low-impedance bypassing of these pins to PGND is
critical. PVIN to PGND must be bypassed with X5R or better ceramic capacitors rated for
at least 1.5× the maximum PVIN voltage.
PVIN_B
24
AVIN_A
AVIN_B
20
26
21
27
22
28
Input power to the controller
AGND_A
AGND_B
VDD5_A
VDD5_B
Analog ground return for controller. Connect the AGND pin directly to the thermal pad on
the PCB board.
—
Output of the 5-V internal regulator. A bypassing capacitor is integrated and no external
bypassing is required.
O
For frequency synchronization, this pin can be programmed as SYNC IN or SYNC OUT pin
by the ADRSEL pin or the (E4h) MFR_SPECIFIC_20 (SYNC_CONFIG) PMBus command.
SYNC is tied together internally for phase A and B. SYNC pin can be left floating when
using module in single-phase configuration.
SYNC
29
I/O
O
VOUT_A
VOUT_B
50, 51
47, 48
Output of each channel. Connect to output bypass capacitors to this pin.
The thermal pad is the PGND pin made with a large area of copper to improve thermal
conductivity to PCB. The thermal pad must have adequate solder coverage for best
thermal performance.
Thermal Pad
52, 54, 57, 59
—
SW_A
SW_B
53
58
Switched power output of the device. Connect the output averaging filter and bootstrap to
this group of pins if needed.
I/O
(1) I = input, O = output
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX UNIT
AVIN
18
16
19
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
4.25
PVIN
PVIN_A, PVIN_B, < 2-ms transient
Input voltage
V
V
EN/UVLO, VOSNS, SYNC, VSEL, MSEL1, MSEL2, ADRSEL
VSHARE, GOSNS/LOOP FLWR
PMB_CLK, PMB_DATA, BCX_CLK, BCX_DAT
VDD5 external bias range
5.5
1.98
5.5
5.25
5.5
VOUT
0.5
VDD5, SMB_ALRT, PGD/RST
BP1V5
5.5
Output voltage
–0.3
–0.3
–40
–55
1.65
150
150
TJ operating junction temperature
Tstg storage temperature
°C
°C
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If
used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
6.2 ESD Ratings
VALUE
±2000
±1500
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
Charged device model (CDM), per ANSI/ESDA/JEDEC JS-002(2)
V(ESD)
Electrostatic discharge
V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
4.25
2.95
4.25
2.95
0.5
NOM
12
MAX
18
UNIT
V
VAVIN
Controller input voltage with internal LDO
Controller input voltage with valid external bias applied to VDD5
Power stage input voltage with internal LDO
Power stage input voltage with valid external bias applied to VDD5
Output voltage range
VAVIN
12
18
V
VPVIN
12
16
V
VPVIN
12
16
V
VOUT
5.5
25
V
IOUTMAX(1 phase)
IOUTMAX(Total)
Phase
TJ
Maximum continuous output current for each phase
Maximum total continuous output current per module
Maximum number of stackable phases
Junction temperature
A
50
A
4
125
105
°C
°C
–40
–40
TA
Ambient temperature
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UNIT
6.4 Thermal Information
QFM (MOW)
59 PINS
12.6
THERMAL METRIC(1)
RθJA
ψJT
Junction-to-ambient thermal resistance
°C/W
°C/W
°C/W
Junction-to-top characterization parameter
Junction-to-board characterization parameter
0.78
9.8
ψJB
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics
TJ = –40°C to 125°C, VPVIN = VAVIN = 12 V, fSW = 550 kHz; zero power dissipation (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
INPUT SUPPLY
VAVIN
Input supply voltage range
Input supply voltage range
Power stage voltage range
Power stage voltage range
Input operating current
Controller input voltage with internal LDO
Controller input voltage with valid external bias
Power stage input voltage with internal LDO
Power stage input voltage with valid external bias
Converter not switching, each phase
4.25
2.95
4.25
2.95
18
VAVIN
18
V
16
VPVIN
VPVIN
16
IAVIN
12.5
2.5
17 mA
AVIN UVLO
Analog input voltage UVLO
for power on reset (PMBus
communication)
Enable threshold
2.7
V
VAVINuvlo
Analog input voltage UVLO
for disable
2.09
2.3
V
Analog input voltage UVLO
hysteresis
250
mV
Delay from AVIN UVLO to
tdelay(uvlo_PMBus) PMBus ready to
communicate
AVIN = 3 V
8
ms
PVIN UVLO
Factory default setting
Programmable range
Resolution
2.75
0.25
2.5
2.75
–5%
2.5
15.75
5%
V
VIN_ON
Power input turn-on voltage
Accuracy
Factory default setting
Programmable range
Resolution
15.5
5%
V
V
VIN_OFF
Power input turn-off voltage
0.25
Accuracy
–5%
ENABLE AND UVLO
EN/UVLO voltage rising
1.05
1.1
threshold
VENuvlo
EN/UVLO voltage falling
threshold
0.9
4.5
VENhys
IENhys
EN/UVLO voltage hysteresis No external resistors on EN/UVLO
EN/UVLO hysteresis current VEN/UVLO = 1.1 V
70
5.5
mV
μA
nA
6.5
EN/UVLO hysteresis current VEN/UVLO = 0.9 V
–100
–5
REMOTE SENSE AMPLIFIER
Remote sense input
impedance
VOSNS –
GOSNS = 1 V
ZRSA
VOSNS to GOSNS
85
130
165
kΏ
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TJ = –40°C to 125°C, VPVIN = VAVIN = 12 V, fSW = 550 kHz; zero power dissipation (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
GOSNS input range for
regulation accuracy (1)
VOSNS –GOSNS = 1 V,
VOUT_SCALE_LOOP ≤0.5
VIRNG(GOSNS)
VIRNG(VOSNS)
0.05
5.5
V
V
–0.05
VOSNS input range for
regulation accuracy (1)
GOSNS = AGND, VOUT_SCALE_LOOP ≤0.5
–0.1
REFERENCE VOLTAGE AND ERROR AMPLIFIER
Default setting
0.4
V
V
V
V
V
V
V
V
V
V
V
V
VREF
Reference voltage(1)
Reference voltage range(1)
Reference voltage resolution(1)
VOUT = 1000 mV
0.25
0.75
2 –12
0.992
0.492
1.490
0.994
0.494
1.492
0.995
0.495
1.493
1.008
0.508
1.510
1.006
0.506
1.508
1.005
0.505
1.507
–40°C ≤TJ ≤150°C(2)
0°C ≤TJ ≤125°C(2)
0°C ≤TJ ≤85°C(2)
VOUT = 500 mV
VOUT = 1500 mV
VOUT = 1000 mV
VOUT = 500 mV
VOUT = 1500 mV
VOUT = 1000 mV
VOUT = 500 mV
VOUT = 1500 mV
VOUT(ACC)
Output voltage accuracy
Programmable error amplifier
transonductance
25
200
µS
MHz
kΩ
GmEA
Resolution(1)
25
8
Four settings: 25 μS, 50 μS, 100 μS, 200 μS
Unloaded bandwidth(1)
Programmable parallel
resistor range
5
1.25
6.25
315
18.75
RpEA
CintEA
CpEA
Resolution(1)
5
1.25
6.25
Programmable integrator
capacitor range
pF
pF
Resolution(1)
Programmable parallel
capacitor range
193.75
pF
Resolution(1)
CURRENT GM AMPLIFIER
Programmable current error
25
200
amplifier transonductance
µS
MHz
kΩ
GmBUF
Resolution(1)
Four settings: 25 µS, 50 µS, 100 µS, 200 µS
25
17
Unloaded bandwidth(1)
Programmable parallel
resistor range
5
800
315
1600
RpBUF
RintBUF
CintBUF
Resolution(1)
5
800
Programmable integrator
resistor range(1)
kΩ
pF
pF
Resolution(1)
Programmable integrator
capacitor range
0.3125
3.125
4.6875
96.875
Resolution(1)
0.3125
3.125
Programmable parallel
capacitor range
CpBUF
Resolution(1)
OSCILLATOR
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MAX UNIT
TJ = –40°C to 125°C, VPVIN = VAVIN = 12 V, fSW = 550 kHz; zero power dissipation (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
275
500
TYP
Adjustment range(2)
Switching frequency(2)
1100
kHz
600
fSW
550
SYNCHRONIZATION
VIH(sync) High-level input voltage
VIL(sync)
1.35
V
Low-level input voltage
0.8
Sync input minimum pulse
width
tpw(sync)
200
ns
SYNC pin frequency range
from FREQUENCY_SWITCH
frequency(1)
20%
ΔfSYNC
–20%
VDD5
–0.85V
VOH(sync)
VOL(sync)
tPLL
Sync output high voltage
Sync output low voltage
PLL lock time
VDD5
0.4
V
V
100-μA load
2.4-mA load
fsw = 550 kHz, SYNC clock frequency 495 kHz –
65
μs
605 kHz(1)
Degre
e
fsw < 1.1 MHz
9
PhaseErr
Phase interleaving error(5)
23
ns
fsw ≥1.1 MHz
RESET
VIH(reset)
VIL(reset)
High-level input voltage(1)
Low-level input voltage
1.35
25
V
0.8
200
55
Minimum RESET_B pulse
width
tpw(reset)
ns
kΩ
V
Rpullup(reset)
Vpullup(reset)
Internal pullup resistance
Internal pullup voltage
VRESET = 0.8 V
RESET# = 1
RESET# = 1
34
VDD5
–0.5
IRESET = 10 μA
VDD5 REGULATOR
Regulator output voltage
Default, IVDD5 = 10 mA
4.5
3.9
4.7
4.9
5.3
V
V
VVDD5
Programmable range(1)
Resolution
200
130
mV
VVDD5(do)
Regulator dropout voltage
285 mV
VAVIN –VVDD5, VAVIN = 4.5 V, IVDD5 = 25 mA
Enable voltage on VDD5 for
pin-strapping
VVDD5ON(IF)
2.62
2.48
2.85
V
V
Disable voltage on VDD5 for
pin-strapping
VVDD5OFF(IF)
VVDD5ON(SW)
VVDD5OFF(SW)
2.25
Switching enable voltage
upon VDD5
4.05
V
Switching disable voltage
upon VDD5
3.10
400
V
Regulator UVLO voltage
hysteresis
VVDD5UV(hyst)
VBOOT(drop)
mV
Bootstrap voltage drop
IBOOT = 20 mA, VDD5 = 4.5 V
225 mV
BP1V5 REGULATOR
VBP1V5
IBP1V5SC
PWM
1.5-V regulator output voltage
1.42
30
1.5
1.58
V
V
AVIN ≥4.5 V, IBP1V5 = 5 mA
1.5-V regulator short-circuit
current(1)
mA
Minimum controllable pulse
width(1)
tON(min)
tOFF(min)
20
ns
ns
PWM Minimum off time(1)
400
500
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TJ = –40°C to 125°C, VPVIN = VAVIN = 12 V, fSW = 550 kHz; zero power dissipation (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
SOFT START
Factory default setting
3
Programmable range(1) (3)
0
–10%
0
31.75 ms
15%
tON_RISE
Soft-start time
Resolution
0.25
0
Accuracy, TON_RISE = 3 ms
Factory default setting(4)
Programmable range(1) (4)
Resolution
127.5 ms
15%
Upper limit on the time to
power up the output
tON_MAX_FLT_LT
0.5
0
Accuracy(1)
–10%
0
Factory default setting
Programmable range(1)
Resolution
127.5 ms
15%
tON_DELAY
SOFT STOP
tOFF_FALL
Turn-on delay
0.5
Accuracy(1)
–10%
Factory default setting(3)
0.5
0.25
0
Programmable range(1)
0
–10%
0
31.75 ms
15%
(3)
Soft-stop time
Turn-off delay
Resolution
Accuracy, tOFF_FALL = 1 ms
Factory default setting
Programmable range(1)
Resolution
127.5 ms
15%
tOFF_DELAY
0.5
21
Accuracy(1)
–10%
6
Power input overvoltage fault
limit
VPVINOVF
Factory default
20
V
V
1
Factory default
Programmable range
Resolution
2.5
Power input undervoltage
warning limit
VPVINUVW
5
15.75
0.25
POWER STAGE
High-side power device on-
resistance
RHS
4.5
0.9
30
V
BOOT –VSW = 4.5 V, TJ = 25°C
mΩ
mΩ
kΩ
Low-side power device on-
resistance
RLS
VVDD5 = 4.5 V, TJ = 25°C
SW internal pulldown
resistance
Rswpd
3
35
Weak high-side gate drive
triggering threshold upon
PVIN rising
Vwkdr(on)
14.75
14.35
6
V
V
Weak high-side gate drive
recovering threshold upon
PVIN falling
Vwkdr(off)
Power stage driver dead-time
tDEAD(LtoH)
from low-side off to high-side VVDD5 = 4.5 V, TJ = 25°C(1)
on
ns
ns
Power stage driver dead-time
tDEAD(HtoL)
from high-side off to low-side VVDD5 = 4.5 V, TJ = 25°C(1)
on
6
CURRENT SHARING
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MAX UNIT
TJ = –40°C to 125°C, VPVIN = VAVIN = 12 V, fSW = 550 kHz; zero power dissipation (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
Output current sharing
accuracy of two devices
defined as the ratio of the
current difference between
two devices to the sum of the
two
I
OUT ≥10 A per device(5)
–10%
10%
ISHARE(acc)
Output current sharing
accuracy of two devices
defined as the current
difference between each
device and the average of all
devices
IOUT < 10 A per device(5)
1
A
V
–1
VSHARE fault trip threshold
0.1
0.2
VVSHARE
VSHARE fault release
threshold
LOW-SIDE CURRENT LIMIT PROTECTION
Off time between restart
7 ×
tON_RISE
Factory default setting
attempts(1)
tOFF(OC)
ms
1 ×
tON_RISE
7 ×
tON_RISE
Range
Factory default setting
Programmable range
Resolution
52
IO_OC_FLT_L Output current overcurrent
8
62
MT
fault threshold
2
A
Negative output current
overcurrent protection
threshold
INEGOC
–20
IOUT = 20 A
4
8
2
4
–2
–4
–1
–2
Output current overcurrent
fault error
IOC(acc)
A
A
IOUT = 25 A (5)
IOUT = 10 A
Output current overcurrent
fault accuracy
IHSOC
IOUT = 20 A(5)
HIGH-SIDE SHORT CIRCUIT PROTECTION
Ratio of high-side short-circuit
protection fault threshold over TJ = 25°C(5)
low-side overcurrent limit
105%
150%
100
200%
IHSOC
High-side current sense
blanking time
ns
POWER GOOD (PGOOD) AND OVERVOLTAGE/UNDERVOLTAGE WARNING
RPGD
PGD pulldown resistance
IPGD = 5 mA
VPGD = 5 V
30
50
Ω
Output high open drain
leakage current into PGD pin
IPGD(OH)
15 µA
0.8
PGD pin output low level
voltage at no supply voltage
VPGD(OL)
V
VAVIN = 0, IPGD = 80 μA
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TJ = –40°C to 125°C, VPVIN = VAVIN = 12 V, fSW = 550 kHz; zero power dissipation (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
106%
103%
TYP
MAX UNIT
114%
Overvoltage warning
threshold (PGD threshold on
VOSNS rising)
110%
VOVW
Factory default, at VOUT_COMMAND (VOC) = 1 V
Range
116%
Resolution
1%
Undervoltage warning
threshold (PGD threshold on
VOSNS falling)
86%
84%
90%
94%
VUVW
Factory default, at VOUT_COMMAND (VOC) = 1 V
Range
97%
VOC
Resolution
1%
PGD release threshold on
VOSNS rising and
undervoltage warning de-
assertion threshold
VPGD(rise)
Factory default, at VOUT_COMMAND (VOC) = 1 V
Factory default, at VOUT_COMMAND (VOC) = 1 V
95%
PGD threshold on VOSNS
falling and overvoltage
warning de-assertion
threshold
VPGD(fall)
105%
115%
OUTPUT OVERVOLTAGE AND UNDERVOLTAGE FAULT PROTECTION
Factory default, at
VOUT_COMMAN
D (VOC) = 1 V
Factory default, at
VOUT_COMMAND (VOC) = 1 V
Overvoltage fault threshold
Range
111%
105%
119%
140%
Factory default, at
VOUT_COMMAN
D (VOC) = 1 V
Factory default, at
VOUT_COMMAND (VOC) = 1 V
VOVF
Factory default, at
VOUT_COMMAN
D (VOC) = 1 V
Factory default, at
VOUT_COMMAND (VOC) = 1 V
Resolution
2.5%
85%
VOC
89%
Factory default, at
Undervoltage fault threshold VOUT_COMMAN
D (VOC) = 1 V
Factory default, at
VOUT_COMMAND = 1.00 V
81%
60%
Factory default, at
VOUT_COMMAN
D = 1.00 V
Factory default, at
VOUT_COMMAND = 1.00 V
VUVF
Range
95%
Factory default, at
VOUT_COMMAN
D = 1.00 V
Factory default, at
VOUT_COMMAND = 1.00 V
Resolution
2.5%
95%
1.2
Undervoltage fault threshold
maximum setting
VUVF(max)
91%
1.15
99% VOC
Factory default, at
VOUT_COMMAN
D (VOC) = 1 V
Fixed overvoltage fault
threshold
Factory default, at
VOUT_COMMAND = 1.00 V
1.25
V
VOVF(fix)OFF
Factory default, at
VOUT_COMMAN
D = 1.00 V
Factory default, at
VOUT_COMMAND = 1.00 V
Recovery threshold(1)
0.4
OUTPUT VOLTAGE TRIMMING
Default resolution of VOUT_COMMAND, trim and
margin, VOUT_SCALE_LOOP = 0.5
1.90
2–12
1.95
1
2.00 mV
VOUTRES
Programmable range(1)
Factory default setting
Programmable range(1)
Accuracy
2 –5
V
mV/µs
VOUT_TRAN_
RT
0.063
15.933
10%
Output voltage transition rate
–10%
VOUT_TRAN_
RT
16-mV/us program
rate
Output voltage transition rate
14.4
16
17.6 mV/µs
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MAX UNIT
TJ = –40°C to 125°C, VPVIN = VAVIN = 12 V, fSW = 550 kHz; zero power dissipation (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
Factory default setting
0.5
Feedback loop scaling
factor(1)
VOUT_SCL_LP
Programmable range, four discrete settings
Factory default setting
0.125
1
0.8
V
VOUT_SCALE_LOOP = 1 (5)
0.25
0.25
0.25
0.75
1.5
Output voltage programmable
values
VOUT_SCALE_LOOP = 0.5
Programmable
VOUT_CMD
VOUT_CMD
VOUT_SCALE_LOOP = 0.25(5)
3
V
V
range
VOUT_SCALE_LOOP =
0.125(5)
0.25
3.6
Maximum output
VOUT_SCALE_LOOP = 1
voltage
Output voltage accuracy
0.742
0.750
170
0.758
TEMPERATURE SENSE AND THERMAL SHUTDOWN
Bandgap thermal shutdown
TSD
150
temperature(1)
Bandgap thermal shutdown
THYST
25
hysteresis(1)
Factory default setting
150
Internal overtemperature fault
limit(1)
OT_FLT_LMT
Programmable range
Resolution
0
0
160
°C
1
Factory default setting
Programmable range
Resolution
125
Internal overtemperature
warning limit(1)
OT_WRN_LMT
TOT(hys)
160
25
1
Internal overtemperature
fault, warning hysteresis(1)
Factory default setting
MEASUREMENT SYSTEM
Output voltage measurement
MVOUT(rng)
MVOUT(acc)
MVOUT(acc)
MVOUT(lsb)
MIOUT(rng)
MIOUT(acc)
MIOUT(acc)
MIOUT(acc)
MIOUT(acc)
MIOUT(acc)
0
–2%
–1%
6
2%
1%
V
range(1)
Output voltage measurement
accuracy
250 mV < VOUT < 6 V
Output voltage measurement 0.5 V < VOUT <
accuracy
VOUT_SCALE_LOOP = 0.5
1.25 V
Output voltage measurement
bit resolution(1)
244
µV
A
Output current measurement
range(1)
30
1
–5
–1
Output current measurement
accuracy(5)
0
0
0
0
0
A
I
OUT ≤5 A, TJ = 25°C
Output current measurement
accuracy(5)
1.5
2
A
IOUT = 10 A, –40°C ≤TJ ≤150°C
IOUT = 20 A, –40°C ≤TJ ≤150°C
IOUT = 10 A, 0°C ≤TJ ≤85°C
IOUT = 20 A, 0°C ≤TJ ≤85°C
–1.5
–2
Output current measurement
accuracy(5)
A
Output current measurement
accuracy(5)
1.3
1.5
A
–1.3
–1.5
Output current measurement
accuracy(5)
A
IOUT = 5 A
IOUT = 10 A
IOUT = 20 A
0
0
0
1
1.5
2
A
A
A
–1
–1.5
–2
Output current measurement
accuracy
MIOUT(acc)
Output current measurement
bit resolution(1)
MIOUT(lsb)
MPVIN(rng)
2–6
A
V
Input voltage measurement
range(1)
0
20
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TJ = –40°C to 125°C, VPVIN = VAVIN = 12 V, fSW = 550 kHz; zero power dissipation (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Input voltage measurement
accuracy
MPVIN(acc)
MPVIN(lsb)
MTSNS(acc)
MTSNS(lsb)
4 V < PVIN < 20 V
3%
–3%
Input voltage measurement
bit resolution(1)
2–6
V
Internal temperature sense
accuracy(5)
3
–40°C ≤TJ ≤150°C
–3
°C
Internal temperature sense bit
resolution(1)
0.25
PMBUS INTERFACE + BCX
High-level input voltage on
VIH(PMBUS)
PMB_CLK, PMB_DATA,
BCX_CLK, BCX_DAT
1.35
V
Low-level input voltage on
PMB_CLK, PMB_DATA,
BCX_CLK, BCX_DAT
VIL(PMBUS)
0.8
Input high level current into
PMB_CLK, PMB_DATA
IlH(PMBUS)
IIL(PMBUS)
10
10
–10
–10
μA
μA
Input low level current into
PMB_CLK, PMB_DATA
Output low level voltage on
PMB_DATA, SMB_ALRT,
BCX_DAT
VAVIN > 4.5 V, input current to PMB_DATA,
SMB_ALRT, BCX_DAT = 20 mA
VOL(PMBUS)
0.4
10
V
Output high level open-drain
leakage current into
IOH(PMBUS)
Voltage on PMB_DATA, SMB_ALRT = 5.5 V
μA
PMB_DATA, SMB_ALRT
Output low level open-drain
sinking current on
PMB_DATA, SMB_ALRT,
BCX_DAT
Voltage on PMB_DATA, SMB_ALRT, BCX_DAT =
0.4 V
IOL(PMBUS)
20
10
mA
PMBus operating frequency
range
fPMBUS_CLK
GOSNS = AGND
Vpin = 0.1 V to 1.35 V
–40°C to 150°C
1000 kHz
PMBUS_CLK and
PMBUS_DATA pin input
capacitance(1)
CPMBUS
5
pF
Number of NVM writable
cycles(1)
NWR_NVM
1000
cycle
ms
Maximum allowable clock
stretch(1)
tCLK_STCH(max)
6
(1) Specified by design; not production tested
(2) The parameter covers 2.95 V to 18 V of AVIN.
(3) The setting of tON_RISE and tOFF_FALL of 0 ms means the unit brings its output voltage to the programmed regulation value of down to 0
as quickly as possible, which results in an effective tON_RISE and tOFF_FALL time of 0.5 ms (fastest time supported).
(4) The setting of tON_MAX_FAULT_LIMIT and tOFF_MAX_WARN_LIMIT of 0 means disabling tON_MAX_FAULT and tOFF_MAX_WARN response and
reporting completely.
(5) Not production tested
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6.6 Typical Characteristics
VPIN = VAVIN = 12 V, TA = 25°C
96
92
88
84
80
76
72
68
64
60
56
52
96
92
88
84
80
76
72
68
64
60
56
52
Vout = 0.5 V 325KHz
Vout = 0.8 V 325KHz
Vout = 1.0 V 550KHz
Vout = 1.2 V 550KHz
Vout = 1.8V 550KHz
Vout = 2.5 V 1100KHz
Vout = 0.5 V 325KHz
Vout = 0.8 V 325KHz
Vout = 1.0 V 550KHz
Vout = 1.2 V 550KHz
Vout = 1.8V 550KHz
Vout = 2.5 V 1100KHz
0
2
4
6
8
10 12 14 16 18 20 22 2425
Output Current (A)
0
5
10
15
20
25
30
35
40
45
50
Output Current (A)
VIN = 5 V
VCC = Internal
Configuration = 2
VOUT
VIN = 5 V
VCC = Internal
Configuration = 2
Phase
图6-1. TPSM8D6B24 Efficiency vs Output Current
96
图6-2. TPSM8D6B24 Efficiency vs Output Current
96
92
88
84
80
76
72
68
64
60
56
52
92
88
84
80
76
72
68
64
60
56
52
Vout = 0.5 V 325KHz
Vout = 0.8 V 325KHz
Vout = 1.0 V 550KHz
Vout = 1.2 V 550KHz
Vout = 1.8V 550KHz
Vout = 2.5 V 1100KHz
Vout = 3.3 V 1100KHz
Vout = 5.0 V 1100KHz
Vout = 0.5 V 325KHz
Vout = 0.8 V 325KHz
Vout = 1.0 V 550KHz
Vout = 1.2 V 550KHz
Vout = 1.8V 550KHz
Vout = 2.5 V 1100KHz
Vout = 3.3 V 1100KHz
Vout = 5.0 V 1100KHz
0
2
4
6
8
10 12 14 16 18 20 22 2425
Output Current (A)
0
5
10
15
20
25
30
35
40
45
50
Output Current (A)
VIN = 12 V
VCC = Internal
Configuration = 2
VOUT
VIN = 12 V
VCC = Internal
Configuration = 2
Phase
图6-3. TPSM8D6B24 Efficiency vs Output Current
图6-4. TPSM8D6B24 Efficiency vs Output Current
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6.6 Typical Characteristics (continued)
VPIN = VAVIN = 12 V, TA = 25°C
20
35
30
25
20
15
10
5
Vout = 0.5 V 325KHz
Vout = 0.8 V 325KHz
Vout = 1.0 V 550KHz
Vout = 1.2 V 550KHz
Vout = 1.8V 550KHz
Vout = 2.5 V 1100KHz
Vout = 0.5 V 325KHz
Vout = 0.8 V 325KHz
Vout = 1.0 V 550KHz
Vout = 1.2 V 550KHz
Vout = 1.8V 550KHz
Vout = 2.5 V 1100KHz
16
12
8
4
0
0
0
2
4
6
8
10 12 14 16 18 20 22 2425
Output Current (A)
0
5
10
15
20
25
30
35
40
45
50
Output Current (A)
VIN = 5 V
VCC = Internal
Configuration = 2
VOUT
VIN = 5 V
VCC = Internal
Configuration = 2
Phase
图6-5. TPSM8D6B24 Power Dissipation vs Output Current
图6-6. TPSM8D6B24 Efficiency vs Output Current
35
Vout = 0.5 V 325KHz
Vout = 0.8 V 325KHz
Vout = 1.0 V 550KHz
Vout = 1.2 V 550KHz
Vout = 1.8V 550KHz
Vout = 2.5 V 1100KHz
Vout = 3.3 V 1100KHz
Vout = 5.0 V 1100KHz
30
25
20
15
10
5
0
0
5
10
15
20
25
30
35
40
45
50
Output Current (A)
VIN = 12 V
VCC = Internal
Configuration = 2
VOUT
VIN = 12 V
VCC = Internal
Configuration = 2
Phase
图6-7. TPSM8D6B24 Efficiency vs Output Current
图6-8. TPSM8D6B24 Efficiency vs Output Current
1.003
700
650
600
550
500
450
400
350
300
1.002
1.001
1
0.999
0.998
325kHz
550kHz
250
200
VOUT = 1.00V
0.997
-40 -20
0
20
40
60
80 100 120 140 160
-40 -20
0
20
40
60
80 100 120 140 160
Temperature (èC)
Temperature (èC)
D015
D016
VOUT_COMMAND = 1 V
图6-9. Output Voltage vs Junction Temperature
图6-10. Switching Frequency
vs Junction Temperature
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6.6 Typical Characteristics (continued)
VPIN = VAVIN = 12 V, TA = 25°C
13.8
13.6
13.4
13.2
13
4.75
4.725
4.7
12.8
12.6
12.4
12.2
12
4.675
11.8
4.65
-40 -20
0
20
40
60
80 100 120 140 160
-40 -20
0
20
40
60
80 100 120 140 160
Temperature (èC)
Temperature (èC)
D017
D018
IVDD5 = 10 mA
VPVIN = VAVIN= 12 V
图6-11. Nonswitching Input Current (IAVIN
)
图6-12. VDD5 Voltage vs Junction Temperature
vs Junction Temperature
1.55
1.525
1.5
2.9
2.85
2.8
2.75
2.7
1.475
2.65
1.45
2.6
-40 -20
0
20
40
60
80 100 120 140 160
-40 -20
0
20
40
60
80 100 120 140 160
Temperature (èC)
Temperature (èC)
D023
D019
IBP1V5 = 2 mA
VPVIN = VAVIN= 12 V
(35h) VIN_ON = 2.75 V
图6-13. BP1V5 Voltage vs Junction Temperature
图6-14. Turn-On Voltage vs Junction Temperature
2.65
1.1
2.6
2.55
2.5
1.05
1
2.45
2.4
0.95
ON
OFF
2.35
-40 -20
0.9
-40 -20
0
20
40
60
80 100 120 140 160
0
20
40
60
80 100 120 140 160
Temperature (èC)
Temperature (èC)
D020
D021
图6-16. EN/UVLO Thresholds vs Junction Temperature
(36h) VIN_OFF = 2.5 V
图6-15. Turn-Off Voltage vs Junction Temperature
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7 Detailed Description
7.1 Overview
The TPSM8D6B24 power module uses a fixed-frequency, proprietary current-mode control. The switching
frequency can be selected from preset values through pinstrapping or PMBus programming. The output voltage
is sensed through a true differential remote sense amplifier and internal resistor divider, then compared to an
internal voltage reference by an error amplifier. An internal oscillator initiates the turn-on of the high-side power
switch. The error amplifier output is buffered and shared through VSHARE among stacked devices. This shared
voltage is compared to the sensed switch node current to drive a linear voltage ramp modulator with input
voltage, output voltage, and switching frequency feedforward to regulate the average switch-node current. As a
synchronous buck converter, the device normally works in continuous conduction mode (CCM) under all load
conditions. The compensation components are integrated and programmable through the PMBus command
(B1h) USER_DATA_01 (COMPENSATION_CONFIG) or with the external pin MSEL1 to select preset values
based on switching frequency and output LC filters.
7.2 Functional Block Diagram
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7.3 Feature Description
7.3.1 Average Current-Mode Control
The TPSM8D6B24 device uses an average current-mode control architecture with independently programmable
current error integration and voltage error integration loops. This architecture provides similar performance to
peak current-mode control without restricting the minimum on-time or minimum off-time control, allowing the gain
selection of the current loop to effectively set the slope compensation. For help selecting compensation values,
customers can use the TPS546x24A Compensation and Pin-Strap Resistor Calculator design tool.
Voltage Feed Forward and Frequency Setting
Voltage Feed Forward
Remote Sense with Internal
Switching Frequency
Resistor Divider
Voltage Regulation Error Amplifier w/
Internal Type-II Compensator
VO_SNS
High-Bandwidth
Average Current Mode
Control Amplifier w/
Internal Compensation
Unity Gain
Remote
Sense Amp
Voltage Error
Amp
Sensed
VOUT
GMV
+
Ö VOUT err
-
S
R
Q
Q
Icntrl
GMI
PWM
+
Ö IL err
+
+
-
Vcntrl
RVV
VREF
GND_SNS
RVI
TON
Generator
I_SNS
Current Error
Amp
CPI
Start
CZV
CPV
CZI
High-Frequency, Low Jitter
On-Time Modulator
Common Internal Ground for Regulation
PLL Synchronizable
PWM_CLK_EDGE
VSHARE
Regulation & Current Share Loop for
Stackability
图7-1. Average Current Mode Control Block Diagram
7.3.1.1 On-Time Modulator
The input voltage feedforward modulator converts the integrated current error signal, ILerr, into an inductor on
time that provides a controlled volt-second balance across the inductor over each full switching period that
simplifies the current error integration loop design. The modulator produces a full-cycle averaged small signal
Vcntrl to dIL/dt transfer function given by 方程式1:
dIL
VIN
dt
dVcntrl Vramp
1
L
5.5
L
=
ì
=
(1)
Thus, the inductor current modulator gain is given by 方程式2:
dIL
VIN
1
5.5
ƒ =
( )
ì
=
dVcntrl
Vramp L ì ƒ L ì ƒ
(2)
This natural integration 1 / f function allows the current loop to be compensated by the mid-band gain of the error
current integrator. Use L = 0.22 μH for calculation.
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7.3.1.2 Current Error Integrator
The current error integrator adjusts the modulator control voltage to match the sensed inductor current, Isns, to
the current voltage at the VSHARE pin. The integrator is tuned through the following parameters in (B1h)
USER_DATA_01 (COMPENSATION_CONFIG):
• GMI
• RVI
• CZI
• CPI
• CZI_MUL
Due to the natural integration of the 1 / f function of the current control gain, the bandwidth of the current control
loop can be adjusted with the mid-band gain of the integrator, GMI × RVI.
The current loop crossover occurs at the frequency when the full loop gain is equal to 1 according to 方程式3:
VPVIN
1
ILOOP ƒ ì
( )
ìCSA ì
= 1
V
1.7 ì pì ƒ ìL
ramp
(3)
Solving for the mid-band gain of the current loop, the user finds 方程式4:
V
1.7
ramp
ILOOPMB = GMIìRVI =
ì
ìL ì pì ƒcoi
VPVIN CSA
(4)
While the Nyquist Theorem suggests that a bandwidth of 1 / 2 fSW is possible, inductor tolerances and phase
delays in the current sense, modulator, and H-bridge power FETs make fSW / 4 a more practical target, which
simplifies the target current loop mid-band gain to achieve a current loop bandwidth of fSW / 4 to 方程式5:
V
ƒsw
1.7
1.7ìp
4ì5.5ì6.155ì10-3
ramp
ILOOPMB = GMIìRVI =
ì
ìLìpì
=
ìLìƒsw = 39.4ìLìƒsw
VPVIN CSA
4
(5)
An integrator from DC to the low-frequency zero, RVI × CZI, compensates for the valley voltage of the modulator
ramp and the nominal offset of the output voltage. A high-frequency filter pole, RVI × CPI, between half the
switching frequency and the switching frequency reduces high-frequency noise from VSHARE and minimizes
pulse-width jitter.
To avoid loop interactions, the integrating zero frequency must be below the voltage loop crossover frequency,
while the high-frequency pole must be between 1 / 2 the switching frequency and the switching frequency to limit
high-frequency noise and jitter in the current loop without imposing additional phase loss in the voltage loop.
The closed loop average current mode control allows the current sense amplifier, on-time modulator, H-bridge
power FETs, and inductor to operate as a transconductance amplifier with forward gain of 1 / CSA or 162.5 A/V
with a bandwidth equal to fcoi.
7.3.1.3 Voltage Error Integrator
The voltage error integrator regulates the output voltage by adjusting the current control voltage, VSHARE, similar
to any current mode control architecture. A transconductance amplifier compares the sense feedback voltage to
a programmed reference voltage to set VSHARE to maintain the desired output voltage. While a regulated current
source feeding an output capacitance provides a natural, stable integrator, mid-band gain is often desired to
improve the loop bandwidth and transient response.
With a transconductance set by the current sense gain, the voltage loop crossover occurs when the full loop gain
equals 1 according to 方程式6.
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1
VOUT _SCALE_LOOPì VLOOP ƒ ì
ì ZOUT ƒ = 1
( )
( )
CSA
(6)
To prevent the current integration loop bandwidth from negatively impacting the phase margin of the voltage
loop, the voltage loop must have a target bandwidth of fcoi / 2.5. With a current mode loop of fSW / 4, the voltage
loop mid-band gain is 方程式7:
1
CSA
VLOOPMB = GMV ì RVV =
ì
f
VOUT _SCALE_LOOP
’
≈
SW
ZOUT
∆
÷
◊
10
«
(7)
An integrator pole is necessary to maintain accurate DC regulation, and the zero-frequency set by RVV × CZV
must be set below the lowest crossover frequency with the largest output capacitor intended to be supported at
the output, but not more than 1 / 2 the target voltage loop crossover frequency, fcov
.
A high frequency noise pole, intended to keep switching noise out of the current loop must also be employed,
with a high-frequency pole set by RVV × CPV must be set between fsw / 4 and fsw.
For pin-programmed options of compensation components, see 表7-9.
For PMBus programming of compensation values, see (B1h) USER_DATA_01 (COMPENSATION_CONFIG).
7.3.2 Linear Regulators
TPSM8D6B24 devices have three internal linear regulators receiving power from AVIN and providing suitable
bias (1.5 V, 1.8 V, and 5 V) for the internal circuitry of the device. Once AVIN, 1.5 V, 1.8 V, and 5 V reach their
respective UVLOs, the device initiates a power-on reset, after which, the device can be communicated with
through PMBus for configuration and users can store defaults to the NVM.
VDD5 has an internally fixed undervoltage lockout of 3.9 V (typical) to enable power-stage conversion. The
VDD5 regulator can also be fed by an external supply of 4.75 V to 5.25 V to reduce internal power dissipation
and improve efficiency by eliminating the loss in the internal LDO, or to allow operation with AVIN less than 4 V.
The external supply should be higher voltage than the LDO regulation voltage programmed by (B5h)
USER_DATA_05 (POWER_STAGE_CONFIG).
The use of the internal regulators to power other circuits is not recommended because the loads placed on the
regulators can adversely affect operation of the controller.
7.3.3 AVIN and PVIN Pins
The TPSM8D6B24 allows for a variety of applications by using the AVIN and PVIN pins together or separately.
The AVIN pin voltage supplies the internal control circuits of the device. The PVIN pin voltage provides the input
voltage to the switching power stage. When connected to a single supply, the input voltage for AVIN and PVIN
can range from 4 V to 16 V. If the PVIN is connected to a separate supply from AVIN, the PVIN voltage can be
2.95 V to 16 V. If PVIN is connected to the same supply as AVIN, then AVIN has to meet a 4-V minimum and 16-
V maximum to drive the controller and driver.
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2.95 V œ 16 V
PVIN
VDD5
PGND
4.25 V œ 18 V
AVIN
AGND
图7-2. TPSM8D6B24 Separate PVIN and AVIN Connections
2.95 V œ 16 V
PVIN
VDD5
PGND
4 V œ 5.25 V
AVIN
AGND
图7-3. TPSM8D6B24 Separate PVIN and AVIN Connections with VDD5
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2.95 V œ 16 V
PVIN
4.75 V œ 5.25 V
VDD5
PGND
2.95 V œ 18 V
or PVIN
AVIN
AGND
图7-4. TPSM8D6B24 Separate PVIN, AVIN, and VDD5 Connections
7.3.4 Input Undervoltage Lockout (UVLO)
The TPSM8D6B24 provides four independent UVLO functions for the broadest range of flexibility in start-up
control. While only the fixed AVIN UVLO is required to enable PMBus connectivity as well as VOUT and
TEMPERATURE monitoring, all four UVLO functions must be met before switching can be enabled.
7.3.4.1 Fixed AVIN UVLO
The TPSM8D6B24 has an internally fixed UVLO of 2.5 V (typical) on AVIN to enable the digital core and initiate
power-on reset, including pin detection. The off-threshold on AVIN is 2.3 V (typical).
7.3.4.2 Fixed VDD5 UVLO
The TPSM8D6B24 has an internally fixed UVLO of 3.9 V (typical) on VDD5 to enable drivers and output voltage
conversion. The off-threshold on VDD5 is 3.5 V.
7.3.4.3 Programmable PVIN UVLO
Two PMBus commands ((35h) VIN_ON and (36h) VIN_OFF) allow the user to set PVIN voltage turn-on and turn-
off thresholds independently with 0.25-V resolution from 2.75 V to 15.75 V (6-bit) for (35h) VIN_ON and from 2.5
V to 15.5 V (6-bit) for (36h) VIN_OFF.
备注
If (36h) VIN_OFF is programmed higher than (35h) VIN_ON, the TPSM8D6B24 rapidly switches
between enabled and disabled while PVIN remains below (36h) VIN_OFF. Propagation delays
between enable and disable can result in the converter starting (61h) TON_RISE and (65h)
TOFF_FALL in such conditions.
7.3.4.4 EN/UVLO Pin
The TPSM8D6B24 also offers a precise threshold and hysteresis current source on the EN/UVLO pin so that it
can be used to program an additional UVLO to any external voltage greater than 1.05 V (typical), including AVIN,
PVIN, or VDD5. For an added level of flexibility, the EN/UVLO pin can be disabled or its logic inverted through
the PMBUS command (02h) ON_OFF_CONFIG, which allows the pin to be connected to AGND to make sure
the output is not enabled until PMBus programming has been completed.
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PVIN
Ihys
EN/UVLO
CNTRL
AGND
图7-5. TPSM8D6B24 UVLO Voltage Divider
7.3.5 Start-Up and Shutdown
The start-up and shutdown of the device is controlled by several PMBus programmable values including:
• (01h) OPERATION
• (02h) ON_OFF_CONFIG
• (60h) TON_DELAY
• (61h) TON_RISE
• (64h) TOFF_DELAY
• (65h) TOFF_FALL
With the default (02h) ON_OFF_CONFIG settings, the timing is as shown in 图 7-6. See the Supported PMBus
Commands section for full details on the implementation.
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CNTRL
VDD5_OK
PVIN_OK
VOUT
TON_DELAY
TON_RISE
TOFF_DELAY
TOFF_FALL
图7-6. TPSM8D6B24 Start-Up and Shutdown
备注
The TPSM8D6B24 requires time between the AVIN and VDD5 reaching their UVLO levels for pin-
detection and PMBus communication and valid sensing of EN/UVLO and PVIN_OK. Once AVIN and
VDD5 exceed their lower UVLO thresholds (2.9-V typical), the TPSM8D6B24 starts its power-on-
reset, self-calibration, and pin-detection. This time delay, tdelay(uvlo_PMBus) (6-ms typical), must be
complete before PVIN_OK or EN/UVLO sensing is enabled.
If VDD5PS_ON, PVIN_OK, and EN/UVLO are above their thresholds before the end of tdelay(uvlo_PMBus)
,
(60h) TON_DELAY starts after tdelay(uvlo_PMBus) completes.
If VDD5PS_ON, PVIN_OK, or EN/UVLO are below their thresholds when tdelay(uvlo_PMBus) completes,
(60h) TON_DELAY starts when VDD5_OK, PVIN_OK, and EN/UVLO are all above their thresholds.
7.3.6 Differential Sense Amplifier and Feedback Divider
The TPSM8D6B24 includes a fully integrated, internal, precision feedback divider and remote sense. Using both
the selectable feedback divider and precision adjustable reference, output voltages up to 6.0 V can be obtained.
The feedback divider can be programmed to divider ratios of 1:1, 1:2, 1:4, or 1:8 using the (29h)
VOUT_SCALE_LOOP command.
The recommended operating range of (21h) VOUT_COMMAND is dependent upon the feedback divider ratio
configured (29h) VOUT_SCALE_LOOP as follows:
表7-1. (29h) VOUT_SCALE_LOOP and (21h)
VOUT_COMMAND Recommended Range
Recommended VOUT Range
(29h) VOUT_SCALE_LOOP
(V)
1
0.5 to 0.75
0.5 to 1.5
1 to 3
0.5
0.25
0.125
2 to 6
Setting (21h) VOUT_COMMAND lower than the recommended range can negatively affect VOUT regulation
accuracy while setting (21h) VOUT_COMMAND above the recommended range can limit the actual output
voltage achieved.
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备注
If the regulation output voltage is limited by the recommended range of the current (29h)
VOUT_SCALE_LOOP value, VOUT can be below the intended (43h) VOUT_UV_WARN_LIMIT or
(44h) VOUT_UV_FAULT_LIMIT without triggering their respective warning or faults due to the limited
range of the reference voltage.
7.3.7 Set Output Voltage and Adaptive Voltage Scaling (AVS)
The initial output voltage can be set by the VSEL pin at AVIN power up. As part of power-on reset (POR), the
VSEL pin senses both the resistance from the VSEL pin to AGND and the divider ratio of the VSEL pin between
B1V5 and AGND. These values program (29h) VOUT_SCALE_LOOP, (21h) VOUT_COMMAND, (2Bh)
VOUT_MIN, and (24h) VOUT_MAX and select the appropriate settings for the internal feedback divider and
precision adjustable reference voltage. Once the TPSM8D6B24 completes its POR and enables PMBus
communication, these initial values can be changed through PMBus communication.
• (20h) VOUT_MODE
• (21h) VOUT_COMMAND
• (29h) VOUT_SCALE_LOOP
• (22h) VOUT_TRIM
• (25h) VOUT_MARGIN_HIGH
• (26h) VOUT_MARGIN_LOW
• (01h) OPERATION
• (02h) ON_OFF_CONFIG
The output voltage can be programmed through PMBus and its value is related to the following registers:
• (24h) VOUT_MAX
• (2Bh) VOUT_MIN
• (40h) VOUT_OV_FAULT_LIMIT
• (42h) VOUT_OV_WARN_LIMIT
• (43h) VOUT_UV_WARN_LIMIT
• (44h) VOUT_UV_FAULT_LIMIT
The TPSM8D6B24 defaults to the relative format for the following, but can be changed to use absolute format
through the PMBus command (20h) VOUT_MODE:
• (25h) VOUT_MARGIN_HIGH
• (26h) VOUT_MARGIN_LOW
• (40h) VOUT_OV_FAULT_LIMIT
• (42h) VOUT_OV_WARN_LIMIT
• (43h) VOUT_UV_WARN_LIMIT
• (44h) VOUT_UV_FAULT_LIMIT
Refer to the detailed description of (20h) VOUT_MODE for details.
7.3.7.1 Reset Output Voltage
The (21h) VOUT_COMMAND value and the corresponding output voltage can be reset to the last selected
power-on reset value set by VSEL or EEPROM as selected in the (EEh) MFR_SPECIFIC_30
(PIN_DETECT_OVERRIDE) command when the PGD/RST_B pin function is set to RESET# in the (EDh)
MFR_SPECIFIC_29 (MISC_OPTIONS) PMBus command. To reset (21h) VOUT_COMMAND to its last power-
on reset value, when the RESET# optional function is enabled, assert the PGD/RST_B pin low externally. While
RESET# is asserted low, (21h) VOUT_COMMAND values received through PMBus are ACKed but no change in
(21h) VOUT_COMMAND is made. When RESET# is selected in (EDh) MFR_SPECIFIC_29 (MISC_OPTIONS),
an internal pullup on the PGD/RST_B pin can be selected by the PULLUP# bit in the same PMBus command to
eliminate the need for an external pullup with the RESET# function.
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PGD/
RST_B
Boot VOUT (VSEL or NVM)
Pre-AVS VOUT
VOUT
Slew Rate set by
VOUT_TRANSITION_RATE
AVS by
VOUT_COMMAND
RST_B Response Delay
图7-7. TPSM8D6B24 Output Voltage Reset
7.3.7.2 Soft Start
To control the inrush current needed to charge the output capacitor bank during start-up, the TPSM8D6B24
implements a soft-start time programmed by the (61h) TON_RISE command. When the device is enabled, the
reference voltage ramps from 0 V to the final level defined by the following at a slew rate defined by the (61h)
TON_RISE command:
• (21h) VOUT_COMMAND
• (29h) VOUT_SCALE_LOOP
• (22h) VOUT_TRIM
• (25h) VOUT_MARGIN_HIGH
• (26h) VOUT_MARGIN_LOW
• (01h) OPERATION
The TPSM8D6B24 devices support several soft-start times from 0 ms to 31.75 ms in 250-µs steps (7 bits)
selected by the (61h) TON_RISE command. The tON_RISE time is selectable by pinstrapping through the MSEL2
pin (eight options), PMBus programming, or both.
During soft start, when the PWM pulse width is shorter than the minimum controllable on time, pulse skipping
can be seen and the output can show larger ripple voltage than normal operation.
7.3.8 Prebiased Output Start-Up
The TPSM8D6B24 limits current from being discharged from a prebiased output voltage during start-up by
preventing the low-side FET from forcing the SW node low until after the first PWM pulse turns on the high-side
FET. Once VOSNS voltage exceeds the increasing reference voltage and high-side SW pulses start, the
TPSM8D6B24 limits the synchronous rectification during each SW period with a narrow on time. The maximum
low-side MOSFET on time slowly increases on a cycle-by-cycle basis until 128 switching periods have elapsed
and the synchronous rectifier runs fully complementary to the high-side MOSFET. This limits the sinking of
current from a prebiased output, and makes sure the output voltage start-up and ramp-to regulation sequences
are monotonically increasing.
In the event of a prebiased output voltage greater than (40h) VOUT_OV_FAULT_LIMIT, the TPSM8D6B24
responds as soon as it completes POR and VDD5 is greater than its own 3.9-V UVLO, even if conversion is
disabled by EN/UVLO or the PMBus (01h) OPERATION command.
7.3.9 Soft Stop and (65h) TOFF_FALL Command
When enabled by (02h) ON_OFF_CONFIG or (01h) OPERATION, the TPSM8D6B24 implements the (65h)
TOFF_FALL command to force a controlled decrease of the output voltage from regulation to 0. There can be
negative inductor current forced during the (65h) TOFF_FALL time to discharge the output voltage. The setting
of (65h) TOFF_FALL of 0 ms means the unit to bring its output voltage down to 0 as quickly as possible, which
results in an effective (65h) TOFF_FALL time of 0.5 ms. When disabled in the (02h) ON_OFF_CONFIG for the
turn-off controlled by the EN/UVLO pin or bit 6 of (01h) OPERATION if the regulator is turned off by (01h)
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OPERATION command, both high-side and low-side FET drivers are turned off immediately and the output
voltage slew rate is controlled by the discharge from the external load.
This feature is disabled for EN/UVLO in (02h) ON_OFF_CONFIG by default.
7.3.10 Power Good (PGOOD)
When conversion is enabled and tON_RISE is complete, if the output voltage remains between (43h)
VOUT_UV_WARN_LIMIT and (42h) VOUT_OV_WARN_LIMIT, the PGOOD open-drain output is released and
allowed to rise to an externally supplied logic level. Upon any fault condition with a shutdown response, the
PGOOD open-drain output is asserted, forcing PGOOD low by default. See 表 7-4 for the possible sources to
pull down the PGOOD pin.
The PGOOD signal can be connected to the EN/UVLO pin of another device to provide additional controlled
turn-on and turn-off sequencing.
7.3.11 Set Switching Frequency
An internal oscillator generates a 275-kHz to 1.1-MHz clock for PWM switching with 16 discrete programmable
options. The switching frequency is selectable by pinstrapping through the resistor divider of MSEL1 (seven
options), PMBus programming (nine options), or both, using the (33h) FREQUENCY_SWITCH command listed
in 表7-2.
表7-2. Oscillator fSW Options
Programmable fSW Options (kHz)
fSW Pinstrapping Options (kHz)
275
325
375
450
550
650
750
900
1100
275
325
—
450
550
650
—
900
1100
7.3.12 Frequency Synchronization
The oscillator can be synchronized to external clock (SYNC IN) or output a clock to synchronize other devices
(SYNC out) on the SYNC pin. To support phase shifted clock for both multi-rail interleaving and multi-phase
operation, the internal oscillator can be phase-shifted from the SYNC pin by 0, 90, 120, 180, 240, or 270
degrees for 1-, 2-, 3-, or 4-phase operation. The SYNC IN or SYNC OUT function, and phase position of single
phase or standalone devices can be selected by pinstrapping through a resistor divider on at the ADRSEL pin,
or by the resistor from the MSEL2 pin to AGND for multi-phase loop follower devices.
In single output multi-phase stack configurations, the SYNC phase offset is programmed along with device count
and phase position using the MSEL2 pin. Loop follower devices in multi-phase stacks are always configured as
SYNC_IN while the loop controller device can be configured for auto-detect, SYNC_IN, or SYNC_OUT through
the resistor divider on the ADRSEL pin.
表7-3. Pin Programmed Phase Positions through ADRSEL Resistor Divider (Single Phase Standalone)
RDIV Code
Phase Position (Degree)
SYNC In/Out
Open (No resistor to BP1V5)
0
Auto-detect In/Out
0, 1
2, 3
4, 5
6, 7
8, 9
0
In
In
In
In
In
90
120
180
240
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表7-3. Pin Programmed Phase Positions through ADRSEL Resistor Divider (Single Phase Standalone)
(continued)
RDIV Code
10,11
Phase Position (Degree)
SYNC In/Out
270
0
In
12, 13
Out
Out
14, 15
180
After initial power up and pin detection, if SYNC IN/OUT is set as auto-detection configuration, the
TPSM8D6B24 senses the SYNC pin to determine if there is any external SYNC clock. Switching or a consistent
pullup on the SYNC pin sets the device for SYNC_IN while a consistent pulldown on SYNC sets the device for
SYNC_OUT. The TPSM8D6B24 devices programmed to be loop followers are always programmed to be SYNC
IN.
When configured for SYNC_IN, if SYNC input pulses are missed for two cycles, or the oscillator frequency drops
below 50% of the free-running switching frequency, the device determines that SYNC clock is lost. If the
TPSM8D6B24 is part of a multi-phase stack, the converter shuts down and remains disabled until a SYNC signal
is reestablished to prevent damage due to the loss of synchronization. Single-phase standalone devices
continues to operate at approximately 50% of the nominal frequency.
7.3.13 Loop Follower Detection
The GOSNS/FLWR pin voltage is detected at power up. When it is pulled high to BP1V5, the device is
recognized as a loop follower. When the GOSNS/FLWR pin is connected to the output ground, the
TPSM8D6B24 is configured as a loop controller.
7.3.14 Current Sensing and Sharing
Both high-side and low-side FET use a SenseFET architecture for current sensing to achieve accurate and
temperature-compensated current monitoring. This SenseFET architecture uses the parasitic resistance of the
FETs to achieve lossless current sense with no external components.
When multiple (2×, 3×, or 4×) devices operate in a multi-phase application, all devices share the same internal
control voltage through the VSHARE pin. The sensed current in each phase is regulated by the VSHARE
voltage by an internal transconductance amplifier to achieve loop compensation and current balancing between
different phases. The amplifier output voltage is compared with an internal PWM ramp to generate the PWM
pulse.
7.3.15 Telemetry
The telemetry sub-system in the controller core supports direct measurements of the following:
• Input voltage
• Output voltage
• Output current
• Die temperature
The ADC supports internal rolling window averaging with rolling windows up to 16 previous measurements for
accurate measurements of these key system parameters. Each ADC conversion requires less than 500 µs,
allowing each telemetry value to be updated within 2 ms.
The current sense telemetry senses the low-side FET current at the start and end of each low-side FET on time
and averages the two measurements to monitor the average inductor current over-report current if the inductor
current is non-linear during the low-side FET on time, such as when the inductor is operating above its saturation
current.
7.3.16 Overcurrent Protection
Both low-side overcurrent (OC) and high-side short circuit protection are implemented.
The low-side overcurrent fault and warning thresholds are programmed through PMBus and sensed across
cycle-by-cycle average current through the low-side MOSFET and compared to the set warning or fault threshold
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while high-side pulses are terminated on a cycle-by-cycle basis, if the peak current through the high-side
MOSFET exceeds the 1.5× the programmed low-side threshold.
When either a low-side overcurrent or high-side short circuit threshold is exceeded during a switching cycle, an
OCP fault counter is incremented. If no overcurrent condition is detected in a switching cycle, the counter is
decremented. If the counter exceeds the delay selected by the (47h) IOUT_OC_FAULT_RESPONSE PMBus
value (default = 3), overcurrent fault condition is declared and the output shuts down. Restart and timing is also
defined as part of (47h) IOUT_OC_FAULT_RESPONSE.
The output OC fault thresholds and fault response are set through PMBUS. The OC fault response can be set to
shutdown, restart, or ignore.
7.3.17 Overvoltage and Undervoltage Protection
The voltage on VOSNS pin is monitored to provide output voltage overvoltage (OV) and undervoltage (UV)
protection. When VOSNS voltage is higher than the OV fault threshold, OV fault is declared and the low-side
FET is turned on to discharge the output voltage and eliminate the OV condition. The low-side FET remains on
until the VOSNS voltage is discharged to 200 mV divide by the internal feedback divider as programmed by
(29h) VOUT_SCALE_LOOP. Once the output voltage is discharged, the output is disabled and the converter
times out and restarts according to the (41h) VOUT_OV_FAULT_RESPONSE PMBus command. When VOSNS
voltage is lower than UV fault threshold, UV fault is declared. After an initial delay programmed by the (45h)
VOUT_UV_FAULT_RESPONSE PMBus command, the output is disabled and the converter times out and
restarts according to the (45h) VOUT_UV_FAULT_RESPONSE PMBus command.
The output UV and OV fault thresholds and fault response are set through PMBUS. The UV and OV fault
response can be set to shutdown, restart, or continue operating without interruption.
7.3.18 Overtemperature Management
There are two schemes of overtemperature protections in the TPSM8D6B24:
• On-chip die temperature sensor for monitoring and overtemperature protection (OTP)
• The bandgap based thermal shutdown (TSD) protection. TSD provides OT fail-safe protection in the event of
a failure of the temperature telemetry system, but can be disabled through (50h) OT_FAULT_RESPONSE for
high temperature testing
The overtemperature protection (OTP) threshold is set through PMBus and compares the (8Dh)
READ_TEMPERATURE_1 telemetry to the (51h) OT_WARN_LIMIT and (4Fh) OT_FAULT_LIMIT. The
overtemperature (OT) fault response can be set to shutdown, restart, or continue operating without interruption.
7.3.19 Fault Management
For the response on OC fault, OT fault, and thermal shutdown for multi-phase stack, the shutdown response has
the highest priority, followed by restart response. Continue operating without interruption response has the
lowest priority.
When multiple faults occur in rapid succession, it is possible for the first fault to occur to mask the second fault. If
the first fault to be detected is configured to continue operating without interruption, and the second fault is
configured to shutdown and restart, the second fault will shutdown but can fail to restart as programmed.
表7-4. Fault Protection Summary
Fault Response
Active During
tON_RISE
Fault or Warning
Programming
FET Behavior
SMB_ALRT
Maskable
PGOOD Logic
Setting
Shutdown
Restart
Ignore
Both FETs off
Low
(4Fh)
OT_FAULT_LIMIT
Internal OT fault
Both FETs off, restart
Yes
Yes
Yes
Y
Y
FETS still controlled by PWM
High
Shutdown or restart
on fault
(51h)
OT_WARN_LIMIT
Internal OT warning
FETS still controlled by PWM
Y
Y
Y
Y
High
Ignore fault
Shutdown
Restart
Both FETs off
Low
Threshold fixed
internally
TSD
Both FETs off, restart
High
Ignore
FETS still controlled by PWM
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表7-4. Fault Protection Summary (continued)
Fault Response
Active During
tON_RISE
Fault or Warning
Programming
FET Behavior
SMB_ALRT
Maskable
PGOOD Logic
Setting
Shutdown
Restart
Ignore
3 PWM counts, then both FETs off
(46h)
IOUT_OC_FAULT_LI
MIT
3 PWM counts, then both FETs
off, restart after [DELAY] ×
tON_RISE
Low
Low Side OC fault
Yes
Y
Y
FETS still controlled by PWM
High
High
Shutdown or restart
on fault
(4Ah)
IOUT_OC_WARN_LI
MIT
Low Side OC
warning
FETS still controlled by PWM
Yes
Yes
Y
Y
Y
Y
Ignore fault
Enable
Negative OC fault
(lower priority than
OVF)
Turn off LS FET
Low
N/A
Disable
FETS still controlled by PWM
High
Three cycles of pulse-by-pulse
current limiting followed by both
FETs off
Shutdown
(46h)
IOUT_OC_FAULT_LI
MIT
Low
High side OC fault
3 cycles of pulse-by-pulse current
limiting followed by both FETs off,
restart after [DELAY] × tON_RISE
Yes
Y
Y
Restart
Ignore
FETS still controlled by PWM
High
LS FET latched ON or turned on
till VOUTreaches 200 mV/
VOUT_SCALE_LOOP; HS FET
OFF
Shutdown
Restart
(40h)
VOUT_OV_FAULT_L
IMIT
Low
High
Low
LS FET latched ON or turned on
till VOUTreaches 200 mV/
VOUT_SCALE_LOOP; HS FET
OFF, restart after [DELAY] ×
tON_RISE
Vout OV fault
No
Y
Y
Ignore
FETS still controlled by PWM
LS FET latched ON or turned on
till VOUTreaches 200 mV/
VOUT_SCALE_LOOP; HS FET
OFF
Shutdown
(40h)
VOUT_OV_FAULT_L
IMIT
LS FET latched ON or turned on
till VOUTreaches 200 mV/
VOUT_SCALE_LOOP; HS FET
OFF, restart after [DELAY] ×
tON_RISE
VOUT OVF fix
Yes
Y
Y
Restart
Ignore
FETS still controlled by PWM
FETS still controlled by PWM
Both FETs off
High
High
Shutdown or restart
on fault
(42h)
VOUT_OV_WARN_L
IMIT
Vout OV warning
Vout UV fault
No
No
No
Y
Y
Y
Y
Y
Y
Ignore fault
Shutdown
(44h)
VOUT_UV_FAULT_L
IMIT
Low
High
Low
Both FETs off, restart after
[DELAY] × tON_RISE
Restart
Ignore
FETS still controlled by PWM
FETS still controlled by PWM
Both FETs off
Shutdown or restart
on fault
(43h)
VOUT_UV_WARN_L
IMIT
Vout UV warning
Ignore fault
Shutdown
(62h)
TON_MAX_FAULT_L
IMIT
Low
Both FETs off, restart after
[DELAY] × tON_RISE
tON MAX rault
PVin UVLO
Restart
Ignore
Yes
Yes
Y
Y
Y
Y
FETS still controlled by PWM
Both FETs off
High
Low
(35h) VIN_ON, (36h)
VIN_OFF
Shutdown
Shutdown
Restart
Ignore
Both FETs off
(55h)
VIN_OV_FAULT_LIM
IT
Low
PVIN OV FAULT
BCX_fault
Both FETs off, restart
Yes
Yes
Y
Y
Y
Y
FETS still controlled by PWM
FETS still controlled by PWM
High
High
N/A
N/A
N/A
N/A
VSEL
MSEL1
MSEL2
ADRSEL
Pin_Strap_NonConv
erge
No (active before
Both FETs off, pull low VSHARE
N
N
N/A
N/A
Low
tON_RISE
)
SYNC_Fault
Loop controller or
standalone device
Yes
High
Low
FETS still controlled by PWM
Loop follower device
Both FETs off, pull low VSHARE
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表7-4. Fault Protection Summary (continued)
Fault Response
Active During
tON_RISE
Fault or Warning
Programming
FET Behavior
SMB_ALRT
Maskable
N/A
PGOOD Logic
High
Setting
SYNC_High/Low
N/A
Loop controller or
standalone device
Yes
N
FETS still controlled by PWM
Low
Loop follower device
Both FETs off, pull low VSHARE
7.3.20 Back-Channel Communication
To allow multiple devices with a shared output to communicate through a single PMBus address and single
PMBus loop follower, the TPSM8D6B24 uses a back-channel communication implemented through BCX_CLK
and BCX_DAT pins. During POR, all of the devices connected to VSHARE must also be connected to BCX_CLK
and BCX_DAT and have appropriate (ECh) MFR_SPECIFIC_28 (STACK_CONFIG) settings. Any programming
error among the devices of a stack will result in a POR fault and prevent enabling of conversion.
During POR, the loop controller reads the programmed values from the loop followers to make sure all expected
loop followers are present and correctly phase-shifted. Then, the loop controller loads critical operating
parameters such as the following to the loop follower devices to ensure correct operation of the STACK:
• (B1h) USER_DATA_01 (COMPENSATION_CONFIG)
• (33h) FREQUENCY_SWITCH
• (61h) TON_RISE
• (21h) VOUT_COMMAND
During operation, the loop controller device receives and responds to all PMBus communication, and loop
follower devices do not need to be connected to the PMBus. If the loop controller receives commands that
require updates to the PMBus registers of the loop follower, the loop controller relays these commands to the
loop followers. Additionally, the loop controller periodically polls loop follower devices for status and telemetry
information to maintain an accurate record of the telemetry and STATUS information for the full stack of devices.
Most PMBus communication must be directed to all phases by leaving the (04h) PHASE PMBus command at its
power-on reset default value of FFh. If a specific device must be communicated with, the (04h) PHASE
command can be changed to address a specific device within the stack, as set by the order value of the (37h)
INTERLEAVE command programmed during POR.
When commands are directed to individual loop followers, write commands are queued by the loop controller to
be sent to the loop followers through the BCX if other BCX communication is in progress. Queued write
commands are written to the loop followers in the order the loop controller receives them. To avoid unnecessary
delays on the PMBus and excessive clock stretching, read transactions targeting individual loop followers are not
queued, and are processed as soon as the BCX bus is available. As a result, it is possible for a read command
targeting an individual loop follower immediately following a write command can be processed before the
preceding write command. To ensure accurate read-back, users must allow a minimum of 4 ms between writing
a value to an individual loop follower and reading that same value back from the same loop follower.
7.3.21 Switching Node (SW)
The SW pin connects to the switching node of the power conversion stage. The SW pin acts as the return path
for the high-side gate driver. When configured as a synchronous buck stage, the voltage swing on SW normally
traverses from below ground to well above the input voltage. Parasitic inductance in the high-side FET and the
output capacitance (COSS) of both power FETs form a resonant circuit that can produce high frequency (> 100
MHz) ringing on this node. The voltage peak of this ringing, if not controlled, can be significantly higher than the
input voltage. Ensure that the peak ringing amplitude does not exceed the absolute maximum rating limit for the
pin.
In many cases, a series resistor and capacitor snubber network connected from the switching node to PGND
can be helpful in damping the ringing and decreasing the peak amplitude. Provide provisions for snubber
network components in the layout of the printed circuit board. If testing reveals that the ringing amplitude at the
SW pin exceeds the limit, then include snubber components.
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7.3.22 PMBus General Description
Timing and electrical characteristics of the PMBus interface specification can be found in the PMB Power
Management Protocol Specification, Part 1, revision 1.3 available at http://pmbus.org. The TPSM8D6B24 device
supports the 100-kHz, 400-kHz, and 1-MHz bus timing requirements.
The TPSM8D6B24 uses clock stretching during PMBus communication, but only stretches the clock during
specific bits of the transaction.
• The TPSM8D6B24 does not stretch the clock during the address byte of any transaction.
• The TPSM8D6B24 can stretch the clock between bit 0 of the command byte and its ACK response.
• The TPSM8D6B24 stretches the clock after bit 0 of the read address of a read transaction.
• The TPSM8D6B24 stretches the clock between bit 0 of the last byte of data and its ACK response
• The TPSM8D6B24 can stretch the clock between bit 1 and bit zero of every fourth byte of data for blocks with
more than four bytes of data.
Communication over the PMBus interface can either support the packet error checking (PEC) scheme or not. If
the loop controller supplies clock (CLK) pulses for the PEC byte, PEC is used. If the CLK pulses are not present
before a STOP, the PEC is not used. If PEC will always be used, consider enabling Require PEC in (EDh)
MFR_SPECIFIC_29 (MISC_OPTIONS) to configure the TPSM8D6B24 to reject any write transaction that does
not include CLK pulses for a PEC byte.
The device supports a subset of the commands in the PMBus 1.3 Power Management Protocol Specification.
See Supported PMBus Commands for more information
The TPSM8D6B24 also supports the SMB_ALERT response protocol. The SMB_ALERT response protocol is a
mechanism by which the TPSM8D6B24 can alert the bus controller that it has experienced an alert and has
important information for the host. The host should process this event and simultaneously access all target
devices on the bus that support the protocol through the alert response address. All target devices that are
asserting SMB_ALERT must acknowledge this request with their PMBus address. The host performs a modified
receive byte operation to get the address of the target device. At this point, the loop controller can use the
PMBus status commands to query the target device that caused the alert. For more information on the SMBus
alert response protocol, see the system management bus (SMBus) specification. Persistent faults associated
with status registers other than (7Eh) STATUS_CML reasserts SMB_ALERT after responding to the host alert
response address.
The TPSM8D6B24 contains nonvolatile memory that is used to store configuration settings and scale factors.
The settings programmed into the device are not automatically saved into this nonvolatile memory. The (15h)
STORE_USER_ALL command must be used to commit the current PMBus settings to nonvolatile memory as
device defaults. The settings that are capable of being stored in nonvolatile memory are noted in their detailed
descriptions.
All pin programmable values can be committed to nonvolatile memory. The POR default selection between pin
programmable values and nonvolatile memory can be selected by the manufacturer-specific (EEh)
MFR_SPECIFIC_30 (PIN_DETECT_OVERRIDE) command.
7.3.23 PMBus Address
The PMBus specification requires that each device connected to the PMBus has a unique address on the bus.
The TPSM8D6B24 PMBus address is determined by the value of the resistor connected between ADRSEL and
AGND and is programmable over the range from 0x10–0x2F, providing 32 unique PMBus addresses.
7.3.24 PMBus Connections
The TPSM8D6B24 supports the 100-kHz, 400-kHz, and 1-MHz bus speeds. Connection for the PMBus interface
must follow the high power DC specifications given in section 3.1.3 in the SMBus specification V2.0 for the 400-
kHz bus speed or the low power DC specifications in section 3.1.2. The complete SMBus specification is
available from the SMBus web site, smiforum.org
The PMBus interface pins PMB_CLK, PMB_DATA, and SMB_ALRT require external pullup resistors to a 1.8-V
to 5.5-V termination. Size the pullup resistors to meet the minimize rise-time required for the desired PMBus
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clock speed but should not source more current than the lowest-rated CLK, DATA, or SMB_ALRT pin on the bus
when the bus voltage is forced to 0.4 V. The TPSM8D6B24 supports a minimum of 20 mA of sink current on
PMB_CLK, PMB_DATA, and SMB_ALRT.
7.4 Device Functional Modes
7.4.1 Programming Mode
The TPSM8D6B24 devices can operate in programming mode when AVIN and VDD5 are powered above their
lower UVLO but VDD5 and PVIN are not powered above their UVLO to enable conversion. In programing mode,
the TPSM8D6B24 accepts and respond to PMBus commands but does not enable switching or conversion.
While PMBus commands can be accepted and processed with VDD5 lower than 3 V, NVM programming through
the (15h) STORE_USER_ALL command must not be used when VDD5 is less than 3 V.
Programming mode allows the TPSM8D6B24 to complete POR and to be configured through PMBus from a 3.3-
V supply without PVIN present.
7.4.2 Standalone, Loop Controller, and Loop Follower Mode Pin Connections
The TPSM8D6B24 can be programmed as a standalone device (single output, single phase) loop controller
device of a single-output, multi-phase stack of devices, or a loop follower device to a loop controller of a mult-
phase stack. The details of the recommended pin connects for each configuration is given in 表7-5.
表7-5. Standalone, Loop Controller, and Loop Follower Pin Connections
Pin
Standalone
Loop Controller
Loop Follower
GOSNS
Ground at output regulation point
Ground at output regulation point
BP1V5
Float or connect to divider for other
voltage to be monitored
VOSNS
VOUT at output regulation point
VOUT at output regulation point
Enable/Control or resistor divider from Enable/Control or resistor divider from
Connect to EN/UVLO of the loop
controller
EN/UVLO
MSEL1
PVIN
PVIN
Programming MSEL1
Programming MSEL1
Short to PGND (thermal pad)
Programming MSEL2 for a Loop
Follower Device (GOSNS Tied to
BP1V5)
MSEL2
Programming MSEL2
Programming MSEL2
VSEL
Programming VSEL
Programming VSEL
Short to PGND (thermal pad)
Short to PGND (thermal pad)
ADRSEL
Programming ADRSEL
Programming ADRSEL
Float or Bypass to AGND with a
capacitor
Connect to VSHARE of the loop
follower
Connect to VSHARE of the loop
controller
VSHARE
SYNC
Float or external sync
External sync or loop follower SYNC Connect to SYNC of the loop controller
Connect to system PMBus or PGND
(thermal pad) if not used
Connect to system PMBus or PGND
Short to PGND (thermal pad)
(thermal pad) if not used
PMB_CLK
Connect to system PMBus or PGND
(thermal pad) if not used
Connect to system PMBus or PGND
Short to PGND (thermal pad)
(thermal pad) if not used
PMB_DATA
SMB_ALRT
BCX_CLK
Connect to system PMBus or PGND
(thermal pad) if not used
Connect to system PMBus or PGND
Short to PGND (thermal pad)
(thermal pad) if not used
Connect to BCX_CLK of the loop
Short to PGND (thermal pad)
Short to PGND (thermal pad)
Connect to loop followers BCX_CLK
controller
Connect to BCX_DAT of the loop
BCX_DAT
Connect to loop followers BCX_DAT
controller
Connect to system PGD or RESET# or Connect to system PGD or RESET# or
PGND (thermal pad) if not used PGND (thermal pad) if not used
PGOOD/RST_B
Short to PGND (thermal pad)
7.4.3 Continuous Conduction Mode
The TPSM8D6B24 devices operate in continuous conduction mode (CCM) at a fixed frequency, regardless of
the output current. During soft start, some of the low-side MOSFET on times are limited to prevent excessive
current sinking in the event the device is started with a prebiased output. After the first PWM pulse, and with
each successive PWM pulse, this limit is increased to allow more low-side FET on time and transition to CCM.
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Once this transition has completed, the low-side MOSFET and the high-side MOSFET on times are fully
complementary.
7.4.4 Operation With CNTL Signal (EN/UVLO)
According to the value in the (02h) ON_OFF_CONFIG register, the TPSM8D6B24 devices can be commanded
to use the EN/UVLO pin to enable or disable regulation, regardless of the state of the (01h) OPERATION
command. The EN/UVLO pin can be configured as either active high or active low (inverted) logic. To use EN/
UVLO pin as a programmable UVLO, the polarity set by (02h) ON_OFF_CONFIG must be positive logic.
7.4.5 Operation with (01h) OPERATION Control
According to the value in the (02h) ON_OFF_CONFIG register, the TPSM8D6B24 devices can be commanded
to use the (01h) OPERATION command to enable or disable regulation, regardless of the state of the CNTL
signal.
7.4.6 Operation with CNTL and (01h) OPERATION Control
According to the value in the (02h) ON_OFF_CONFIG command, the TPSM8D6B24 devices can be
commanded to require both a CNTRL signal from the EN/UVLO pin, and the (01h) OPERATION command to
enable or disable regulation.
7.5 Programming
7.5.1 Supported PMBus Commands
The commands listed in 表 7-6 are implemented as described to conform to the PMBus 1.3 specification. 表 7-6
also lists the default for the bit behavior and register values.
表7-6. Supported PMBus Commands and Default Values
CMD Code (HEX)
Command Name (PMBus 1.3 SPEC)
Default Value
01h
OPERATION
04h
02h
ON_OFF_CONFIG
CLEAR_FAULTS
PHASE
17h
03h
n/a
04h
FFh
10h
WRITE_PROTECT
STORE_USER_ALL
RESTORE_USER_ALL
CAPABILITY
00h
15h
n/a
16h
n/a
19h
D0h
1Bh
20h
SMBALERT_MASK
VOUT_MODE
n/a
97h
21h
VOUT_COMMAND
VOUT_TRIM
019Ah
0000h
0C00h
021Ah
01E6h
E010h
C840h
0100h
01C2h
F00Bh
F00Ah
0020h
C880h
E000h
024Dh
22h
24h
VOUT_MAX
25h
VOUT_MARGIN_HIGH
VOUT_MARGIN_LOW
VOUT_TRANSITION_RATE
VOUT_SCALE_LOOP
VOUT_MIN
26h
27h
29h
2Bh
33h
FREQUENCY_SWITCH
VIN_ON
35h
36h
VIN_OFF
37h
INTERLEAVE
38h
IOUT_CAL_GAIN
IOUT_CAL_OFFSET
VOUT_OV_FAULT_LIMIT
39h
40h
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表7-6. Supported PMBus Commands and Default Values (continued)
CMD Code (HEX)
Command Name (PMBus 1.3 SPEC)
VOUT_OV_FAULT_RESPONSE
VOUT_OV_WARN_LIMIT
VOUT_UV_WARN_LIMIT
VOUT_UV_FAULT_LIMIT
VOUT_UV_FAULT_RESPONSE
IOUT_OC_FAULT_LIMIT
IOUT_OC_FAULT_RESPONSE
IOUT_OC_WARN_LIMIT
OT_FAULT_LIMIT
Default Value
41h
BDh
022Eh
01CCh
01B2h
BEh
42h
43h
44h
45h
46h
F0D0h
FFh
47h
4Ah
4Fh
50h
F0A0h
0096h
BCh
OT_FAULT_RESPONSE
OT_WARN_LIMIT
51h
007Dh
0015
55h
VIN_OV_FAULT_LIMIT
VIN_OV_FAULT_RESPONSE
VIN_UV_WARN_LIMIT
TON_DELAY
56h
3Ch
58h
F00Ah
F800h
F00Ch
F800h
3Bh
60h
61h
TON_RISE
62h
TON_MAX_FAULIT_LIMIT
TON_MAX_FAULT_RESPONSE
TOFF_DELAY
63h
64h
F800h
F002h
00h
65h
TOFF_FALL
78h
STATUS_BYTE
79h
STATUS_WORD
00h
7Ah
7Bh
7Ch
7Dh
7Eh
7Fh
80h
STATUS_VOUT
00h
STATUS_IOUT
00h
STATUS_INPUT
00h
STATUS_TEMPERATURE
STATUS_CML
00h
00h
STATUS_OTHER
00h
STATUS_MFR_SPECIFIC
READ_VIN
00h
88h
n/a
8Bh
8Ch
8Dh
98h
READ_VOUT
n/a
READ_IOUT
n/a
READ_TEMPERATURE_1
PMBUS_REVISION
n/a
33h
99h
MFR_ID
00 00 00h
00 00 00h
00 00 00h
00 00 00h
54 49 54 6D 24 41h
40 00h
22 18 C2 1D 06h
70h
9Ah
9Bh
9Eh
ADh
AEh
B1h
B5h
D0h
DAh
DBh
MFR_MODEL
MFR_REVISION
MFR_SERIAL
IC_DEVICE_ID
IC_DEVICE_REV
USER_DATA_01 (COMPENSATION_CONFIG)
USER_DATA_05 (POWER_STAGE_CONFIG)
MFR_SPECIFIC_00 (TELEMETRY_CONFIG)
MFR_SPECIFIC_10 (READ_ALL)
MFR_SPECIFIC_11 (STATUS_ALL)
03 03 03 03 03 00h
n/a
n/a
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表7-6. Supported PMBus Commands and Default Values (continued)
CMD Code (HEX)
Command Name (PMBus 1.3 SPEC)
MFR_SPECIFIC_20 (SYNC_CONFIG)
MFR_SPECIFIC_28 (STACK_CONFIG)
MFR_SPECIFIC_29 (MISC_OPTIONS)
MFR_SPECIFIC_30 (PIN_DETECT_OVERRIDE)
MFR_SPECIFIC_31 (Loop Follower_ADDRESS)
MFR_SPECIFIC_32 (NVM_CHECKSUM)
MFR_SPECIFIC_33 (SIMULATE FAULTS)
MFR_SPECIFIC_44 (FUSION_ID0)
Default Value
E4h
ECh
EDh
EEh
EFh
F0h
F1h
FCh
FDh
F0h
0000h
0000h
1F2Fh
24h
E9E0h
0000h
02D0h
MFR_SPECIFIC_45 (FUSION_ID1)
54 49 4C 4F 43 4Bh
7.5.2 Pin Strapping
The TPSM8D6B24 provides four IC pins that allow the initial PMBus programming value on critical PMBus
commands to be selected by the resistors connected to that pin without requiring PMBus communication.
Whether a specific PMBus command is initialized to the value selected by the detected resistance or stored
NVM memory is determined by the commands bit in the PIN_DETECT_OVERRIDE PMBus Command. The four
pins and the commands they program for a loop controller or standalone device (GOSNS connected to Ground)
are provided in 表7-7.
Each pin can be programmed in one of four ways:
• Pin shorted to AGND with less than 20 Ω
• Pin floating or tied to BP1V5 with more than 1 MΩ
• Pin bypassed to AGND through a resistor according to R2G code only (16 resistor options)
• Pin bypassed to AGND through a resistor according to R2G code and to BP1V5 according to Divider Code
(16 resistor × 16 resistor divider options)
Due to the flexibility of programming options with up to 274 configurations per pin, it is recommended that
designers consider using one of the available design tools, such as TPS546x24A Compensation and Pin-Strap
Resistor Calculator to assist with proper programming resistor selection.
表7-7. TPSM8D6B24 Pin Programming Summary
Pin
Resistors
Resistor to AGND
Resistor Divider
Resistor to AGND
Resistor Divider
Both
PMBus Registers
MSEL1
COMPENSATION_CONFIG
COMPENSATION_CONFIG, FREQUENCY_SWITCH
IOUT_OC_WARN_LIMIT, IOUT_OC_FAULT_LIMIT, STACK_CONFIG
TON_RISE
MSEL2
VSEL
VOUT_COMMAND, VOUT_SCALE_LOOP, VOUT_MAX, VOUT_MIN
loop follower_ADDRESS
ADRSEL
Resistor to AGND
Resistor Divider
loop follower_ADDRESS, SYNC_CONFIG, INTERLEAVE
备注
Resistor divider values of "none" can be implemented with no resistor to BP1V5 or use a 1-MΩ
resistor to BP1V5 for improved reliability and noise immunity.
loop follower devices with GOSNS tied to BP1V5 only use the resistor from MSEL2 to AGND to program the
following:
• (4Ah) IOUT_OC_WARN_LIMIT
• (46h) IOUT_OC_FAULT_LIMIT
• (ECh) MFR_SPECIFIC_28 (STACK_CONFIG)
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• (37h) INTERLEAVE
The loop follower receives all other pin programmed values from the loop controller over BCX as part of the
power-on reset function.
备注
The high precision Pin-Detection programming which provides 8-bit resolution for each pin in the
TPSM8D6B24 can be sensitive to PCB contamination from flux, moisture, and debris. As such, users
should consider committing Pin Programmed values to User Non-Volatile memory and disable future
use of Pin Strapped values as part of the product flow. The programming sequence to commit Pin
Programmed PMBus register values to NVM and disable future use of Pin Strapped programming is:
• Select MSEL1, MSEL2, VSEL, and ADRSEL programming resistors to program the desired
PMBus register values.
• Power AVIN and VDD5 above their UVLOs to initiate pin detection and enable PMBus
communication.
• Update any PMBus register values not programmed to their final value by pin detection.
• Write the value 0000h using the Write Word protocol to (EEh) MFR_SPECIFIC_30
(PIN_DETECT_OVERRIDE).
• Send the command code 15h using the Send Byte protocol to initialize a (15h)
STORE_USER_ALL function.
• Allow a minimum 100 ms for the device to complete a burn of NVM User Store. Loss of AVIN or
VDD5 power during this 100 ms can compromise the integrity of the NVM. Failure to complete the
NVM burn can result in a corruption of NVM and a POR fault on subsequent power on resets.
7.5.2.1 Programming MSEL1
The
MSEL1
pin
programs
(B1h)
USER_DATA_01
(COMPENSATION_CONFIG)
and
(33h)
FREQUENCY_SWITCH. The resistor divider ratio for MSEL1 selects the nominal switching frequency using 表
7-8:
表7-8. MSEL1 Divider Code for Programming
Resistor
Divider Code
COMPENSATION_CONFIG (CONFIG #)
FREQUENCY_SWITCH Value (kHz)
None (no
resistor to
BP1V5)
7-25 (select values)
550
0
1
0-15
16-31
0-15
275
325
450
550
650
900
1100
1500
2
3
16-31
0-15
4
5
16-31
0-15
6
7
16-31
0-15
8
9
16-31
0-15
10
11
12
13
14
15
16-31
0-15
16-31
0-15
16-31
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The resistor to ground for MSEL1 selects the (B1h) USER_DATA_01 (COMPENSATION_CONFIG) values to
program the following voltage loop and current loop gains. For options other than the EEPROM code (MSEL1
shorted to AGND or MSEL1 to AGND resistor code 0), the current and voltage loop zero and pole frequencies
are scaled with the programmed switching frequency. The current loop pole frequency is scale located at
approximately the switching frequency, while the current loop zero is located at approximately 1 / 20 the
switching frequency. the voltage loop pole is located at approximately 1 / 2 the switching frequency and the
voltage loop zero is located at approximately 1 / 100 the switching frequency.
表7-9. MSEL1 Resistor to AGND Code with no Divider Programming
Compensation (No Divider)
Compensation (Even Divider)
Compensation (Odd Divider)
Resistor
Code
V Loop
Gain
V Loop
Gain
V Loop
Config # I Loop Gain
Config # I Loop Gain
Config # I Loop Gain
Gain
N/A
N/A
0.5
1
Short
Float
0
3
2
2
N/A
N/A
0
N/A
N/A
N/A
N/A
16
17
18
19
20
21
22
23
24
25
26
27
28
20
30
21
N/A
N/A
5
EEPROM
EEPROM
EEPROM
N/A
N/A
7
3
3
3
3
4
4
4
4
5
5
5
5
6
6
6
6
1
2
4
8
1
2
4
8
1
2
4
8
1
2
4
8
EEPROM
EEPROM
1
8
1
2
2
2
2
2
3
3
3
3
3
4
4
4
4
4
0.5
1
5
2
9
2
5
2
3
10
12
13
14
15
17
18
19
20
22
23
24
25
3
2
5
4
4
4
4
5
8
5
5
8
6
0.5
1
6
6
0.5
1
6
7
7
6
2
8
8
2
6
4
9
9
4
6
8
10
11
12
13
14
15
10
11
12
13
14
15
8
7
0.5
1
0.5
1
7
7
2
2
7
4
4
7
8
8
10
2
With both the resistor to ground code and the resistor divider code, use the look-up table to select the
appropriate resistors.
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7.5.2.2 Programming MSEL2
The resistor divider on MSEL2 pin programs the (61h) TON_RISE value to select the soft-start time used by the
TPSM8D6B24.
表7-10. MSEL2 Divider Code for Programming
Resistor Divider Code
TON_RISE Value (ms)
None (No resistor to BP1V5)
Short to AGND
3
Float
0
1
2
3
4
5
6
7
0.5
1
3
5
7
10
20
31.75
The resistor to ground for MSEL2 selects the (4Ah) IOUT_OC_WARN_LIMIT, (46h) IOUT_OC_FAULT_LIMIT,
and (ECh) MFR_SPECIFIC_28 (STACK_CONFIG) values using 表7-11.
表7-11. MSEL2 Resistor to AGND Code for IOUT_OC_WARN/FAULT_LIMIT and
STACK Programming
Resistor to AGND
Code
STACK_CONFIG (Number OF
Loop Followers / # of Phases)
OC_FAULT (A)/OC_WARN (A)
Short
0000h (0 loop followers,
standalone)
40/52
40/52
Float
0
0001h (1 loop follower, 2-phase)
0000h (0 loop followers,
standalone)
1
2
3
4
0001h (1 loop follower, 2-phase)
0002h (2 loop followers, 3-phase)
0003h (3 loop followers, 4-phase)
40/52
30/39
20/26
10/14
0000h (0 loop followers,
standalone)
5
6
7
8
0001h (1 loop follower, 2-phase)
0002h (2 loop followers, 3-phase)
0003h (3 loop followers, 4-phase)
0000h (0 loop followers,
standalone)
9
0001h (1 loop follower, 2-phase)
0002h (2 loop followers, 3-phase)
0003h (3 loop followers, 4-phase)
10
11
12
0000h (0 loop followers,
standalone)
13
14
15
0001h (1 loop follower, 2-phase)
0002h (2 loop followers, 3-phase)
0003h (3 loop followers, 4-phase)
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7.5.2.3 Programming VSEL
The resistor divider ratio for VSEL programs the (21h) VOUT_COMMAND range, (29h) VOUT_SCALE_LOOP
divider, (2Bh) VOUT_MIN, and (24h) VOUT_MAX levels according to the following tables.
Select the resistor divider code that contains the desired nominal boot voltage within the range of VOUT between
minimum VOUT and maximum VOUT. For voltages from 0.5 V to 1.25 V, a single resistor to ground or a resistor
divider can be used.
表7-12. VSEL Resistor Divider Code for Programming
Nominal Boot Voltage Range
Resistor Divider
Code
Minimum VOUT
Maximum VOUT
Resolution
EEPROM (0.8 V)
EEPROM (0.8 V)
N/A
Float
Open (bot resistor
only)
0.5
1.25
0.050
0.6
0.75
0.9
1.05
1.2
1.5
1.8
2.1
2.4
3.0
3.6
4.2
3.6
4.2
4.8
5.4
0.75
0.9
1.05
1.2
1.5
1.8
2.1
2.4
3.0
3.6
4.2
4.8
4.2
4.8
5.4
6.0
0.010
0.010
0.010
0.010
0.020
0.020
0.020
0.020
0.040
0.040
0.040
0.040
0.040
0.040
0.040
0.040
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
With the resistor divider code selected for the range of VOUT, select the bottom resistor code with the (21h)
VOUT_COMMAND offset and (21h) VOUT_COMMAND step from Programming VSEL.
表7-13. VSEL Resistor to AGND Code for Programming
Resistor Divider
Code
VOUT_SCALE
_LOOP
VOUT_MIN
VOUT_MAX
VOUT_COMMAND
VOUT_COMMAND Step (V)
Offset (V)
EEPROM
(0.80)
1.0
Short to AGND
0.5
EEPROM (0.5)
EEPROM (1.5)
N/A
Float
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1
1.5
1.5
1.5
1.5
1.5
1.5
3
N/A
None
0.50
0.6
0.050
0.010
0.010
0.010
0.010
0.020
0.020
0.020
0.020
0.040
0
1
2
3
4
5
6
7
8
0.5
0.5
0.75
0.9
0.5
0.5
1.05
1.2
0.25
0.25
0.25
0.25
0.125
1
3
1.5
1
3
1.8
1
3
2.1
2
6
2.4
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表7-13. VSEL Resistor to AGND Code for Programming (continued)
Resistor Divider
Code
VOUT_SCALE
_LOOP
VOUT_MIN
VOUT_MAX
VOUT_COMMAND
VOUT_COMMAND Step (V)
Offset (V)
9
0.125
0.125
0.125
0.125
0.125
0.125
0.125
2
2
2
2
2
2
2
6
6
6
6
6
6
6
3.0
3.6
4.2
3.6
4.2
4.8
5.4
0.040
0.040
0.040
0.040
0.040
0.040
0.040
10
11
12
13
14
15
To calculate the resistor to AGND code, subtract the (21h) VOUT_COMMAND offset from the target output
voltage and divide by the (21h) VOUT_COMMAND step.
VOUT - VOUT_COMMAND(Offset)
Code =
VOUT _COMMAND(Step)
(8)
7.5.2.4 Programming ADRSEL
The resistor divider for the ADRSEL pin selects the range of PMBus addresses and SYNC direction for the
TPSM8D6B24. For standalone devices with only one device supporting a single output voltage, the ADRSEL
divider also selects the phase shift between SYNC and the switch node.
表7-14. ADRSEL Resistor Divider Code for and SYNC_IN Programming
Resistor Divider Code
DEVICE_ADDRESS
Sync In/Sync Out
STACK_CONFIG = 0x0000 (Standalone Only)
Range
PHASE SHIFT
INTERLEAVE
0x0020
0x0020
0x0020
0x0040
0x0040
0x0041
0x0041
0x0031
0x0031
0x0042
0x0042
0x0032
0x0032
0x0043
0x0043
0x0020
0x0020
0x0042
0x0042
—
—
Short to AGND
0x7F (127d)
EEPROM (0x24h / 36d)
16d-31d
Auto Detect
Auto Detect
Auto detect
Sync in
0
Float
None
0
0
0
16d-31d
0
1
32d-47d
Sync in
0
2
16d-31d
Sync in
90
3
32d-47d
Sync in
90
4
16d-31d
Sync in
120
120
180
180
240
240
270
270
0
5
32d-47d
Sync in
6
16d-31d
Sync in
7
32d-47d
Sync in
8
16d-31d
Sync in
9
32d-47d
Sync in
10
11
12
13
14
15
16d-31d
Sync in
32d-47d
Sync in
16d-31d
Sync out
Sync out
Sync out
Sync out
32d-47d
0
16d-31d
180
180
32d-47d
The resistor to AGND for ADRSEL programs the device PMBus target device address according to 表7-15:
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表7-15. ADRSEL Resistor to AGND Code for Programming
Resistor to AGND Code
Target Device Address (16-31
Range)
Target Device Address (32-47
Range)
0
1
0x10h (16d)
0x11h (17d)
0x12h (18d)
0x13h (19d)
0x14h (20d)
0x15h (21d)
0x16h (22d)
0x17h (23d)
0x18h (24d)
0x19h (25d)
0x1Ah (26d)
0x1Bh (27d)
0x1Ch (28d)
0x1Dh (29d)
0x1Eh (30d)
0x1Fh (31d)
0x20h (32d)
0x21h (33d)
0x22h (34d)
0x23h (35d)
0x24h (36d)
0x25h (37d)
0x26h (38d)
0x27h (39d)
0x48h (72d)
0x29h (41d)
0x2Ah (42d)
0x2Bh (43d)
0x2Ch (44d)
0x2Dh (45d)
0x2Eh (46d)
0x2Fh (47d)
2
3
4
5
6
7
8
9
10
11
12
13
14
15
备注
When a TPSM8D6B24 device is configured as the loop controller of a multi-phase stack, it will always
occupy the zero-degree position in (37h) INTERLEAVE, but the ADRSEL resistor divider can still be
used to select Auto Detect, Forced SYNC_IN, and Forced SYNC_OUT. When the loop controller of a
multi-phase stack is configured for SYNC_IN, all devices of the stack remain disabled until a valid
external SYNC signal is provided.
7.5.2.5 Programming MSEL2 for a Loop Follower Device (GOSNS Tied to BP1V5)
Configuring a TPSM8D6B24 device as a loop follower disables all pinstraps except MSEL2, which programs
(37h)
INTERLEAVE
for
stacking
and
(ECh)
MFR_SPECIFIC_28
(STACK_CONFIG),
(4Ah)
IOUT_OC_WARN_LIMIT, and (46h) IOUT_OC_FAULT_LIMIT with a single resistor to AGND. Note that the loop
controller is always device 0.
表7-16. Loop Follower MSEL2 Resistor to AGND Code for and Programming
Resistor to AGND
Code
Device Number, Number of Phases
IOUT_OC_WARN_LIMIT (A)/
IOUT_OC_FAULT_LIMIT (A)
Short
Device 1, 2-phase
Device 1, 2-phase
Device 1, 2-phase
Device1, 2-phase
Device 1, 3-phase
Device 1, 3-phase
Device 2, 3-phase
Device 2, 3-phase
Device 1, 4-phase
Device 1, 4-phase
Device 2, 4-phase
Device 2, 4-phase
Device 3, 4-phase
40/52
30/39
40/52
30/39
40/52
30/39
40/52
30/39
40/52
30/39
40/52
30/39
40/52
Float
6
7
4
5
8
9
2
3
14
15
10
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表7-16. Loop Follower MSEL2 Resistor to AGND Code for and Programming
(continued)
Resistor to AGND
Code
Device Number, Number of Phases
IOUT_OC_WARN_LIMIT (A)/
IOUT_OC_FAULT_LIMIT (A)
11
Device 3, 4-phase
30/39
备注
During the power-on sequence, device 0 (stack loop controller) reads back phase information from all
connected loop followers, if any loop follower phase response does not match the (ECh)
MFR_SPECIFIC_28 (STACK_CONFIG) results of the loop controller, the converter sets the POR fault
bit in (80h) STATUS_MFR_SPECIFIC but does not allow conversion. Once all connected devices
respond to device 0, device 0 passes remaining pin-strap information to the loop followers to ensure
matched programming during operation. Adding an additional phase requires adjusting the MSEL2
resistors on the loop controller device and the MSEL2 resistor to ground on all other loop follower
devices.
7.5.2.6 Pin-Strapping Resistor Configuration
表 7-17 and 表 7-18 provide the bottom resistor (pin to AGND) values in ohms, and the top resistor (pin to
BP1V5) values in Ωs. Select the column with the desired R2G code in the top row and the row with the desired
resistor divider code in the left most column. The Pin-to-AGND resistor value is the resistor value in the
highlighted row in the first column under the desired R2G code. The Pin-to-BP1V5 resistor value, if used, is the
resistor value in the row starting with the desired divider code in the left most column under the desired R2G
code and resistor. To ensure accurate pin detection over operating temperature and product life-time, 1%
tolerance or better resistors should be used.
表7-17. Pin-Strapping Resistor (Ω) Table for R2G Codes 0-7
R2G code
0
1
2
3
4
5
6
7
4640
5620
6810
8250
10000
12100
14700
17800
Rbot →
Divider Code
Resistor to BP1V5 Value (Ω)
(↓)
0
1
21500
15400
11500
9090
7150
5620
4640
3830
3160
2610
2050
1620
1270
953
26100
18700
14000
11000
8660
6810
5620
4640
3830
3160
2490
1960
1540
1150
866
31600
22600
16900
13300
10500
8250
6810
5620
4640
3830
3010
2370
1870
1400
1050
750
38300
27400
20500
16200
12700
10000
8250
6810
5620
4640
3650
2870
2260
1690
1270
909
46400
33200
24900
19600
15400
12100
10000
8250
56200
40200
30100
23700
18700
14700
12100
10000
8250
68100
48700
36500
28700
22600
17800
14700
12100
10000
8250
82500
59000
44200
34800
27400
21500
17800
14700
12100
10000
7870
2
3
4
5
6
7
8
6810
9
5620
6810
10
11
12
13
14
15
4420
5360
6490
3480
4220
5110
6190
2740
3320
4020
4870
2050
2490
3010
3650
715
1540
1870
2260
2740
511
619
1100
1330
1620
1960
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表7-18. Pin-Strapping Resistor (Ω) Table for R2G Codes 8-15
R2G code
8
9
10
11
12
13
14
15
21500
26100
31600
38300
46400
56200
68100
82500
Rbot →
Divider Code
Resistor to BP1V5 Value (Ω)
(↓)
0
1
100000
71500
53600
42200
33200
26100
21500
17800
14700
12100
9530
121000
86600
64900
51100
40200
31600
26100
21500
17800
14700
11500
9090
147000
105000
78700
61900
48700
38300
31600
26100
21500
17800
14000
11000
8660
178000
127000
95300
75000
59000
46400
38300
31600
26100
21500
16900
13300
10500
7870
215000
154000
115000
90900
71500
56200
46400
38300
31600
26100
20500
16200
12700
9530
261000
187000
140000
110000
86600
68100
56200
46400
38300
31600
24900
19600
15400
11500
8660
316000
226000
169000
133000
105000
82500
68100
56200
46400
38300
30100
23700
18700
14000
10500
1500
402000
274000
205000
162000
127000
100000
82500
68100
56200
46400
26500
28700
22600
16900
12700
9090
2
3
4
5
6
7
8
9
10
11
12
13
14
15
7500
5900
7150
4420
5360
6490
3320
4020
4870
5900
7150
2370
2870
3480
4220
5110
6190
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7.6 Register Maps
7.6.1 Conventions for Documenting Block Commands
According to the SMBus specification, block commands are transmitted across the PMBus interface in
ascending order. The description below shows the convention this document follows for documenting block
commands.
This document follows the convention for byte ordering of block commands:
When block values are listed as register map tables, they are listed in byte order from top to bottom starting with
Byte N and ending with Byte 0.
• Byte 0 (first byte sent) corresponds to bits 7:0.
• Byte 1 (second byte sent) corresponds to bits 15:8.
• Byte 2 (third byte sent) corresponds to bits 23:16.
• …and so on
When block values are listed as text in hexadecimal, they are listed in byte order, from left to right, starting with
Byte 0 and ending with Byte N with a space between each byte of the value. In block 54 49 54 6D 24 41h, the
byte order is:
• Byte 0, bits 7:0, = 54h
• Byte 1, bits 15:8, = 49h
• Byte 2, bits 23:16, = 6Dh
• Byte 3, bits 31:24, = 24h
• Byte 4, bits 39:32, = 41h
图7-8. Block Command Byte Ordering
47
46
45
44
43
42
41
40
RW
RW
RW
RW
RW
RW
RW
RW
Byte N
Byte …
Byte 3
Byte 2
Byte 1
Byte 0
39
38
37
36
35
34
33
32
RW
RW
RW
RW
RW
RW
RW
RW
31
30
29
28
27
26
25
24
RW
RW
RW
RW
RW
RW
RW
RW
23
22
21
20
19
18
17
16
RW
RW
RW
RW
RW
RW
RW
RW
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
LEGEND: R/W = Read/Write; R = Read only
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7.6.2 (01h) OPERATION
CMD Address
Write Transaction:
Read Transaction:
Format:
01h
Write Byte
Read Byte
Unsigned Binary (1 byte)
Phased:
No
NVM Backup:
Updates:
No
On-the-fly
The (01h) OPERATION command is used to enable or disable power conversion, in conjunction input from the
enable pins, according to the configuration of the (02h) ON_OFF_CONFIG command. This command is also
used to set the output voltage to the upper or lower MARGIN levels, and select soft-stop.
图7-9. (01h) OPERATION Register Map
7
6
5
4
3
2
1
0
R
0
RW
RW
RW
RW
RW
RW
RW
ON_OFF
SOFT_OFF
MARGIN
TRANSITION
LEGEND: R/W = Read/Write; R = Read only
表7-19. Register Field Descriptions
Bit
Field
Access
Reset
Description
Enable or disable power conversion when the (02h) ON_OFF_CONFIG
command is configured to require input from the CMD bit for output control.
There can be several other requirements that must be satisfied before the
power conversion can begin (for example, input voltages above UVLO
thresholds, enable pins high if required by (02h) ON_OFF_CONFIG, and so
forth).
7
ON_ OFF
RW
0b
0b: Disable power conversion.
1b: Enable power conversion and enable ignore faults on MARGIN.
This bit controls the turn-off profile when (02h) ON_OFF_CONFIG is configured
to require input from the CMD bit for output voltage control and OPERATION bit
7 transitions from 1b to 0b is ignored when bit 7 is 1b.
0b: Immediate off. Power conversion stops immediately and the power stage is
forced to a high-Z state.
6
SOFT_ OFF
RW
0b
1b: Soft off. Power conversion continues for the tOFF_ DELAY time, then the
output voltage is ramped down to 0 V at a slew rate according to tOFF_ FALL
.
Once the output voltage reaches 0 V, power conversions stops.
Sets the margin state.
0000b, 0001b, 0010b: Margin OFF. Output voltage target is (21h)
VOUT_COMMAND. OV and UV faults behave normally per their respective
fault response settings 0.
0101b: Margin low (ignore fault if bit 7 is 1b). Output voltage target is
VOUT_MARGIN_LOW. OV and UV faults are ignored and do not trigger
shutdown or STATUS updates.
0110b: Margin low (act on fault). Output voltage target is (26h)
VOUT_MARGIN_LOW. OV/UV faults trigger per their respective fault response
settings.
5:2
MARGIN
RW
0000b
1001b: Margin high (ignore fault). Output voltage target is
VOUT_MARGIN_HIGH. OV and UV triggers are ignored and do not trigger
shutdown or STATUS update.
1010b: Margin high (act on fault). Output voltage target is (25h)
VOUT_MARGIN_HIGH. OV/UV trigger per their respective fault response
settings.
Other: Invalid/unsupported data
1
0
TRANSITION
Reserved
R
R
0b
0b
Not used and always set to 0.
Not used and always set to 0.
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Attempts to write (01h) OPERATION to any value other than those listed above are considered invalid or
unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate status bits, and notifying
the host according to the PMBus 1.3.1 Part II specification, section 10.9.3.
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7.6.3 (02h) ON_OFF_CONFIG
CMD Address
Write Transaction:
Read Transaction:
Format:
02h
Write Byte
Read Byte
Unsigned Binary (1 byte)
No
Phased:
NVM Backup:
Updates:
EEPROM
On-the-fly
The (02h) ON_OFF_CONFIG command configures the combination of enable pin input and serial bus
commands needed to enable or disable power conversion, including how the unit responds when power is
applied to PVIN.
图7-10. (02h) ON_OFF_CONFIG Register Map
7
R
0
6
R
0
5
R
0
4
3
2
1
0
RW
PU
RW
CMD
RW
CP
RW
RW
POLARITY
DELAY
LEGEND: R/W = Read/Write; R = Read only
表7-20. Register Field Descriptions
Bit
Field
Access
Reset
Description
7:5
Reserved
R
000b
Not used and always set to 0.
0b: Unit starts power conversion any time the input power is present, regardless of
the state of the CONTROL pin.
1b: Act on CONTROL. Use the (01h) OPERATION command to start or stop power
conversion, or both.
4
3
2
1
PU
CMD
RW
RW
RW
RW
NVM
NVM
NVM
NVM
0b: Ignore the (01h) OPERATION command to start or stop power conversion.
1b: Act on the (01h) OPERATION command (and the CONTROL pin if configured
by CP) to start or stop power conversion.
0b: Ignore the CONTROL pin to start or stop power conversion. The UVLO function
of the EN/UVLO pin is not active when CONTROL pin is ignored.
1b: Act on the CONTROL pin (and the (01h) OPERATION command) if configured
by bit [3]) to start or stop power conversion.
CP
0b: CONTROL pin has active low polarity. The UVLO function of the EN/UVLO pin
cannot be used when CONTROL has active load polarity.
1b: The CONTROL pin has active high polarity.
POLARITY
0b: When power conversion is commanded OFF by the CONTROL pin (must be
configured to respect the CONTROL pin as above), continue regulating for the
(64h) TOFF_DELAY time, then ramp the output voltage to 0 V, in the time defined
by (65h) TOFF_FALL.
0
DELAY
RW
NVM
1b: When power conversion is commanded OFF by the CONTROL pin (must be
configured to respect the CONTROL pin as above), stop power conversion
immediately.
For the purposes of (02h) ON_OFF_CONFIG, the device pin EN/UVLO is the CONTROL pin.
Attempts to write (02h) ON_OFF_CONFIG to any value other than those explicitly listed above are considered
invalid or unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate status bits, and
notifying the host according to the PMBus 1.3.1 Part II specification, section 10.9.3.
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7.6.4 (03h) CLEAR_FAULTS
CMD Address
Write Transaction:
Read Transaction:
Format:
03h
Send Byte
N/A
Data-less
Yes
Phased:
NVM Backup:
Updates:
No
On-the-fly
CLEAR_FAULTS is a phased command used to clear any fault bits that have been set. This command
simultaneously clears all bits in all status registers of the selected phase, or all phases if PHASE = FFh. At the
same time, the device releases its SMB_ALERT# signal output if SMB_ALERT# is asserted. CLEAR_FAULTS is
a write-only command with no data.
The CLEAR_FAULTS command does not cause a unit that has latched off for a fault condition to restart. If the
fault is still present when the bit is cleared, the fault bit is immediately set again and the host is notified by the
usual means.
If the device responds to an Alert Response Address (ARA) from the host, it clears SMB_ALERT# but not the
offending status bit or bits (as it has successfully notified the host and then expects the host to handle the
interrupt appropriately). The original fault and any from other sources that occur between the initial assertion of
SMB_ALERT# and the successful response of the device to the ARA are cleared (through CLEAR_FAULTS,
OFF-ON toggle, or power reset) before any of these sources are allowed to re-trigger SMB_ALERT#. However,
fault sources that only become active post-ARA trigger SMB_ALERT#.
图7-11. (03h) CLEAR_FAULTS Register Map
7
6
5
4
3
2
1
0
W
W
W
W
W
W
W
W
CLEAR_FAULTS
LEGEND: R/W = Read/Write; R = Read only
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7.6.5 (04h) PHASE
CMD Address
Write Transaction:
Read Transaction:
Format:
04h
Write Byte
Read Byte
Unsigned Binary (1 byte)
Phased:
No
NVM Backup:
Updates:
No
On-the-fly
The PHASE command provides the ability to configure, control, and monitor individual phases. Each PHASE
contains the operating memory and user store and default store for each phase output. The phase selected by
the PHASE command is used for all subsequent phase-dependent commands. The phase configuration needs
to be established before any phase-dependent command can be successfully executed.
In the TPSM8D6B24, each PHASE is a separate device. The loop and PMBus loop controller device, GOSNS/
FLWR connected to ground, is always PHASE = 00h. Loop follower devices, GOSNS/FLWR connected to
BP1V5, have their phase assignment defined by their phase position, as defined by INTERLEAVE or MSEL2.
图7-12. (04h) PHASE Register Map
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
PHASE
LEGEND: R/W = Read/Write; R = Read only
表7-21. Register Field Descriptions
Bit
Field
Access
Reset
Description
00h: All commands address Phase 1.
01h: All commands address Phase 2.
02h: All commands address Phase 3.
03h: All commands address Phase 4.
04h-FEh: Unsupported or invalid data
7:0
PHASE
RW
FFh
FFh: Commands are addressed to all phases as a single entity. See the following
text for more information.
The range of valid data for PHASE also depends on the phase configuration. Attempts to write (04h) PHASE to
a value not supported by the current phase configuration are considered invalid or unsupported data and cause
the TPSM8D6B24 to respond by flagging the appropriate status bits and notifying the host according to the
PMBus 1.3.1 Part II specification, section 10.9.3.
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7.6.6 (10h) WRITE_PROTECT
CMD Address
Write Transaction:
Read Transaction:
Format:
10h
Write Byte
Read Byte
Unsigned Binary (1 byte)
No
Phased:
NVM Backup:
Updates:
EEPROM
On-the-fly
The WRITE_PROTECT command controls writing to the PMBus device. The intent of this command is to
provide protection against accidental changes; it has one data byte that is described below. This command does
not provide protection against deliberate or malicious changes to a configuration or operation of the device. All
supported commands can have their parameters read, regardless of the WRITE_PROTECT settings.
图7-13. (10h) WRITE_PROTECT Register Map
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
WRITE_PROTECT
LEGEND: R/W = Read/Write; R = Read only
表7-22. Register Field Descriptions
Bit
Field
Access
Reset
Description
00h: Enable writes to all commands.
20h: Disables all write access except to the WRITE_ PROTECT, OPERATION,
ON_ OFF_ CONFIG, STORE_USER_ALL, and VOUT_ COMMAND commands.
40h: Disables all WRITES except to the WRITE_ PROTECT, OPERATION, and
STORE_USER_ALL commands.
WRITE_
PROTECT
7:0
RW
NVM
80h: Disables all WRITES except to the WRITE_ PROTECT and
STORE_USER_ALL commands.
Other: Invalid/unsupported data
Attempts to write (10h) WRITE_PROTECT to any invalid value as specified above are considered invalid or
unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate status bits, and notifying
the host according to the PMBus 1.3.1 Part II specification, section 10.9.3.
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7.6.7 (15h) STORE_USER_ALL
CMD Address
Write Transaction:
Read Transaction:
Format:
15h
Send Byte
N/A
Data-less
Phased:
No, PHASE = FFh only
NVM Backup:
Updates:
No
Not recommended for on-the-fly-use, but not explicitly blocked
The STORE_USER_ALL command instructs the PMBus device to copy the entire contents of the operating
memory to the matching locations in the nonvolatile user store memory. Any items in operating memory that do
not have matching locations in the user store are ignored.
NVM store operations are not recommended while the output voltages are in regulation, although the user is not
explicitly prevented from doing so, as interruption can result in a corrupted NVM. PMBus commands issued
during this time can cause long clock stretch times, or simply be ignored. TI recommends disabling regulation,
and waiting a minimum of 100 ms before continuing, following issuance of NVM store operations.
To prevent storing mismatched register values to NVM, STORE_USER_ALL must not be used unless PHASE =
FFh.
图7-14. (15h) STORE_USER_ALL Register Map
7
6
5
4
3
2
1
0
W
W
W
W
W
W
W
W
STORE_USER_ALL
LEGEND: R/W = Read/Write; R = Read only
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7.6.8 (16h) RESTORE_USER_ALL
CMD Address
Write Transaction:
Read Transaction:
Format:
16h
Send Byte
N/A
Data-less
Phased:
No, PHASE = FFh only
NVM Back-up:
Updates:
No
Disables Regulation during RESTORE
The RESTORE_USER_ALL command instructs the PMBus device to disable operation and copy the entire
contents of the non-volatile User Store memory to the matching locations in the Operating Memory, then
Overwrite Operating Memory of any commands selected in PIN_DETECT_OVERRIDE with their last read pin-
detected values. The values in the Operating Memory are overwritten by the value retrieved from the User Store
and Pin Detection. Any items in User Store that do not have matching locations in the Operating Memory are
ignored.
To prevent storing mismatched register values to NVM, RESTORE_USER_ALL should not be used unless
PHASE = FFh.
图7-15. (16h) RESTORE_USER_ALL Register Map
7
6
5
4
3
2
1
0
W
W
W
W
W
W
W
W
RESTORE_USER_ALL
LEGEND: R/W = Read/Write; R = Read only
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7.6.9 (19h) CAPABILITY
CMD Address
Write Transaction:
Read Transaction:
Format:
19h
N/A
Read Byte
Unsigned Binary (1 byte)
Phased:
No
NVM Backup:
Updates:
No
N/A
The CAPABILITY command provides a way for the host to determine the capabilities of this PMBus device. This
command is read-only and has one data byte formatted as the following:
图7-16. (19h) CAPABILITY Register Map
7
R
6
5
4
3
2
1
R
0
0
R
0
R
R
R
R
R
PEC
SPEED
ALERT
FORMAT
AVSBUS
LEGEND: R/W = Read/Write; R = Read only
表7-23. Register Field Descriptions
Bit
7
Field
PEC
Access
Reset
Description
R
R
1b
1b: Packet Error Checking is supported.
10b: Maximum supported bus speed is 1 MHz.
6:5
SPEED
10b
1b: The device has an SMB_ALERT# pin and supports the SMBus Alert Response
protocol.
4
ALERT
R
1b
3
2
FORMAT
AVSBUS
Reserved
R
R
R
0b
0b
0b: Numeric format is LINEAR or DIRECT.
0b: AVSBus is NOT supported.
Reserved. Always set to 0.
1:0
00b
Attempts to write (19h) CAPABILITY to any value are considered invalid or unsupported data and cause the
TPSM8D6B24 to respond by flagging the appropriate status bits and notifying the host according to the PMBus
1.3.1 Part II specification, section 10.9.3.
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7.6.10 (1Bh) SMBALERT_MASK
CMD Address
Write Transaction:
Read Transaction:
Format:
1Bh
Write Word
Block-Write/Block-Read Process Call
Write: Unsigned Binary (2 bytes)Read: Unsigned Binary (1 byte)
No, Only PHASE = FFh is supported
EEPROM
Phased:
NVM Backup:
Updates:
On-the-fly
The SMBALERT_MASK command can be used to prevent a warning or fault condition from asserting the
SMBALERT# signal. Setting a MASK bit does not prevent the associated bit in the STATUS_CMD from being
set, but prevents the associated bit in the STATUS_CMD from asserting SMB_ALERT#. See Reference [3] for
more information on the command format. The following register descriptions describe the individual mask bits
available.
SMBALERT_MASK Write Transaction = Write Word. CMD = 1Bh, Low =STATUS_CMD, High = MASK
SMBALERT_MASK Read Transaction = Block-Write or Block-Read Process Call. Write 1 byte block with
STATUS_CMD, read 1 byte block.
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7.6.11 (1Bh) SMBALERT_MASK_VOUT
CMD Address
Write Transaction:
Read Transaction:
Format:
1Bh (with CMD byte = 7Ah)
Write Word
Block-Write/Block-Read Process Call
Unsigned Binary (1 byte)
No, Only PHASE = FFh is supported
EEPROM
Phased:
NVM Backup:
Updates:
On-the-fly
SMBALERT_MASK bits for the STATUS_VOUT command
图7-17. (1Bh) SMBALERT_MASK_VOUT Register Map
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
R
R
mVOUT_MINM
AX
mVOUT_OVF mVOUT_OVW mVOUT_UVW mVOUT_UVF
LEGEND: R/W = Read/Write; R = Read only
mTON_MAX
0
0
表7-24. Register Field Descriptions
Bit
Field
Access
Reset
Description
mVOUT_
OVF
0b: SMBALERT may assert due to this condition.
1b: SMBALERT may not assert due to this condition.
7
RW
NVM
mVOUT_
OVW
0b: SMBALERT may assert due to this condition.
1b: SMBALERT may not assert due to this condition.
6
5
RW
RW
RW
RW
RW
R
NVM
NVM
NVM
NVM
NVM
00b
mVOUT_
UVW
0b: SMBALERT may assert due to this condition.
1b: SMBALERT may not assert due to this condition.
mVOUT_
UVF
0b: SMBALERT may assert due to this condition.
1b: SMBALERT may not assert due to this condition.
4
mVOUT_
MINMAX
0b: SMBALERT may assert due to this condition.
1b: SMBALERT may not assert due to this condition.
3
mTON_
MAX
0b: SMBALERT may assert due to this condition.
1b: SMBALERT may not assert due to this condition.
2
Not
supported
1:0
Not supported and always set to 00b.
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7.6.12 (1Bh) SMBALERT_MASK_IOUT
CMD Address
Write Transaction:
Read Transaction:
Format:
1Bh (with CMD byte = 7Bh)
Write Word
Block-Write/Block-Read Process Call
Unsigned Binary (1 byte)
No, Only PHASE = FFh is supported
EEPROM
Phased:
NVM Backup:
Updates:
On-the-fly
SMBALERT_MASK bits for STATUS_IOUT
图7-18. (1Bh) SMBALERT_MASK_IOUT Register Map
7
6
R
0
5
4
3
R
0
2
R
0
1
R
0
0
R
0
RW
RW
RW
mIOUT_OCF
mIOUT_OCW
mIOUT_UCF
LEGEND: R/W = Read/Write; R = Read only
表7-25. Register Field Descriptions
Bit
Field
Access
Reset
Description
mIOUT_
OCF
0b: SMBALERT may assert due to this condition.
1b: SMBALERT may not assert due to this condition.
7
RW
NVM
Not
supported
6
5
R
0b
NVM
NVM
0b
Not supported
mIOUT_
OCW
0b: SMBALERT may assert due to this condition.
1b: SMBALERT may not assert due to this condition.
RW
RW
R
mIOUT_UC
F
4
1b: SMBALERT may not assert due to this condition.
Not
supported
3
Not supported
Not supported
Not
supported
2:0
RW
0b
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7.6.13 (1Bh) SMBALERT_MASK_INPUT
CMD Address
Write Transaction:
Read Transaction:
Format:
1Bh (with CMD byte = 7Ch)
Write Word
Block-Write/Block-Read Process Call
Unsigned Binary (1 byte)
No, Only PHASE = FFh is supported
EEPROM
Phased:
NVM Backup:
Updates:
On-the-fly
SMBALERT_MASK bits for STATUS_INPUT
图7-19. (1Bh) SMBALERT_MASK_INPUT Register Map
7
R
0
6
R
0
5
R
0
4
R
0
3
2
R
0
1
R
0
0
R
0
RW
mLOW_VIN
LEGEND: R/W = Read/Write; R = Read only
表7-26. Register Field Descriptions
Bit
Field
Access
Reset
Description
Not
supported
7
R
0b
Not supported
Not
supported
6
5
4
3
2
1
0
R
R
0b
0b
Not supported
Not supported
Not supported
Not
supported
Not
supported
R
0b
0b: SMBALERT may assert due to this condition.
1b: SMBALERT may not assert due to this condition.
mLOW_ VIN
RW
R
NVM
0b
Not
supported
Not supported
Not supported
Not supported
Not
supported
R
0b
Not
supported
R
0b
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7.6.14 (1Bh) SMBALERT_MASK_TEMPERATURE
CMD Address
Write Transaction:
Read Transaction:
Format:
1Bh (with CMD byte = 7Dh)
Write Word
Block-Write/Block-Read Process Call
Unsigned Binary (1 byte)
No, Only PHASE = FFh is supported
EEPROM
Phased:
NVM Backup:
Updates:
On-the-fly
SMBALERT_MASK bits for STATUS_TEMPERATURE
图7-20. (1Bh) SMBALERT_MASK_TEMPERATURE Register Map
7
6
5
R
0
4
R
0
3
R
0
2
R
0
1
R
0
0
R
0
RW
RW
mOTF
mOTW
LEGEND: R/W = Read/Write; R = Read only
表7-27. Register Field Descriptions
Bit
Field
Access
Reset
Description
0b: SMBALERT may assert due to this condition.
1b: SMBALERT may not assert due to this condition.
7
mOTF
RW
NVM
0b: SMBALERT may assert due to this condition.
1b: SMBALERT may not assert due to this condition.
6
mOTW
RW
R
NVM
0d
Not
supported
5:0
Not supported and always set to 000000b.
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7.6.15 (1Bh) SMBALERT_MASK_CML
CMD Address
Write Transaction:
Read Transaction:
Format:
1Bh (with CMD byte = 7Eh)
Write Word
Block-Write/Block-Read Process Call
Unsigned Binary (1 byte)
No, Only PHASE = FFh is supported
EEPROM
Phased:
NVM Backup:
Updates:
On-the-fly
SMBALERT_MASK bits for STATUS_CML
图7-21. (1Bh) SMBALERT_MASK_CML Register Map
7
6
5
4
3
R
0
2
R
0
1
0
R
0
RW
RW
RW
RW
RW
mIVC
mIVD
mPEC
mMEM
mCOMM
LEGEND: R/W = Read/Write; R = Read only
表7-28. Register Field Descriptions
Bit
Field
Access
Reset
Description
0b: SMBALERT may assert due to this condition.
1b: SMBALERT may not assert due to this condition.
7
mIVC
RW
NVM
0b: SMBALERT may assert due to this condition.
1b: SMBALERT may not assert due to this condition.
6
5
4
3
mIVD
mPEC
RW
RW
RW
RW
NVM
NVM
NVM
NVM
0b: SMBALERT may assert due to this condition.
1b: SMBALERT may not assert due to this condition.
0b: SMBALERT may assert due to this condition.
1b: SMBALERT may not assert due to this condition.
mMEM
mPROC
0b: SMBALERT may assert due to this condition.
1b: SMBALERT may NOT assert due to this condition.
Not
2
R
0b
Not supported
supported
Not
supported
3:2
1
R
RW
R
00b
NVM
0b
Not supported
0b: SMBALERT may assert due to this condition.
1b: SMBALERT may not assert due to this condition.
mCOMM
Not
supported
0
Not supported
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7.6.16 (1Bh) SMBALERT_MASK_OTHER
CMD Address
Write Transaction:
Read Transaction:
Format:
1Bh (with CMD byte = 7Fh)
Write Word
Block-Write/Block-Read Process Call
Unsigned Binary (1 byte)
Phased:
No
NVM Backup:
Updates:
EEPROM
On-the-fly
SMBALERT_MASK bits for STATUS_OTHER
图7-22. (1Bh) SMBALERT_MASK_OTHER Register Map
7
6
5
4
3
2
1
0
R
R
R
R
R
R
R
R
mFIRST_
TO_ALERT
0
0
0
0
0
0
0
LEGEND: R/W = Read/Write; R = Read only
表7-29. Register Field Descriptions
Bit
Field
Access
Reset
Description
Not
supported
7:1
R
0h
Not supported
mFIRST_
TO_ ALERT
The FIRST_ TO_ ALERT bit does not in itself generate SMBALERT assertion,
hence this bit is hard-coded to 1b (source is masked).
0
R
1b
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7.6.17 (1Bh) SMBALERT_MASK_MFR
CMD Address
Write Transaction:
Read Transaction:
Format:
1Bh (with CMD byte = 80h)
Write Word
Block-Write/Block-Read Process Call
Unsigned Binary (1 byte)
Phased:
No
NVM Backup:
Updates:
EEPROM
On-the-fly
SMBALERT_MASK bits for STATUS_MFR
图7-23. (1Bh) SMBALERT_MASK_MFR Register Map
7
6
5
R
0
4
R
0
3
2
1
0
R
0
RW
RW
RW
RW
RW
mPOR
mSELF
mRESET
mBCX
mSYNC
LEGEND: R/W = Read/Write; R = Read only
表7-30. Register Field Descriptions
Bit
Field
Access
Reset
Description
0b: SMBALERT may assert due to this condition.
1b: SMBALERT may not assert due to this condition.
7
mPOR
RW
NVM
0b: SMBALERT may assert due to this condition.
1b: SMBALERT may not assert due to this condition.
Due to variations in AVIN UVLO, unmasking this bit can result in SMBALERT being
asserted on power up.
6
mSELF
RW
NVM
Not
supported
5
4
3
2
R
R
0b
0b
Not supported
Not supported
Not
supported
0b: SMBALERT may assert due to this condition.
1b: SMBALERT may not assert due to this condition.
mRESET
mBCX
RW
RW
NVM
NVM
0b: SMBALERT may assert due to this condition.
1b: SMBALERT may not assert due to this condition.
0b: SMBALERT may assert due to this condition.
1b: SMBALERT may not assert due to this condition.
1
0
mSYNC
RW
R
NVM
0b
When the loop controller device of a multi-phase stack is programmed for Auto
Detect SYNC, unmasking this bit can result in a momentary assertion of
SMBALERT when the multi-phase stack is enabled.
Not
supported
Not supported
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7.6.18 (20h) VOUT_MODE
CMD Address
Write Transaction:
Read Transaction:
Format:
20h
Write Byte
Read Byte
Unsigned Binary (1 byte)
Phased:
No
NVM Backup:
Updates:
EEPROM
Conversion Disabled: on-the-fly, Conversion Enabled: Read Only
The data byte for the VOUT_MODE command is one byte that consists of a three bit mode and a five bit
parameter as shown in 图7-24. The three bit mode sets whether the device uses the ULINEAR16, half-precision
IEEE 754 floating point, or VID or DIRECT modes for output voltage related commands. The five bit parameter
provides more information about the selected mode, such as the ULINEAR16 exponent or which manufacturer's
VID codes are being used.
图7-24. (20h) VOUT_MODE Register Map
7
6
5
4
3
2
1
0
RW
REL
R
R
RW
RW
RW
RW
RW
MODE
PARAMETER
LEGEND: R/W = Read/Write; R = Read only
表7-31. Register Field Descriptions
Bit
Field
Access
Reset
Description
0b: Absolute Data Format
1b: Relative Data Format
7
REL
RW
NVM
00b: Linear Format (ULINEAR16, SLINEAR16)
Other: Unsupported or invalid
6:5
4:0
MODE
R
00b
MODE = 00b (Linear Format): Specifies the exponent “N”to use with output
voltage related commands, in two’s complement format. Supported exponent
values in the linear mode range from –4 (62.5 mV/LSB) to –12 (0.244 mV/LSB).
Refer to the following text for more information.
PARAMETE
R
RW
NVM
Changing VOUT_MODE
Changing VOUT_MODE forces an update to the values of many VOUT related commands to conform to the
updated VOUT_MODE value including relative versus absolute mode and the linear exponent value. When
programming VOUT_MODE in conjunction with other VOUT related commands, VOUT related commands are
interpreted with the current VOUT_MODE value and converted if VOUT_MODE is later changed.
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7.6.19 (21h) VOUT_COMMAND
CMD Address
Write Transaction:
Read Transaction:
Format:
21h
Write Word
Read Word
ULINEAR16, Absolute Only per VOUT_MODE
Phased:
No
NVM Backup:
Updates:
EEPROM or Pin Detection
On-the-fly
VOUT_COMMAND causes the device to set its output voltage to the commanded value with two data bytes.
Output voltage changes due to VOUT_COMMAND occur at the rate specified by VOUT_TRANSITION_RATE.
When PGD/RST_B is configured as a RESET# pin in MISC_OPTIONS, assertion of the PGD/RST_B pin causes
the output voltage to return to the VBOOT value, and causes the VOUT_COMMAND value to be updated
accordingly.
图7-25. (21h) VOUT_COMMAND Register Map
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
VOUT_COMMAND (High Byte)
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
VOUT_COMMAND (Low Byte)
LEGEND: R/W = Read/Write; R = Read only
表7-32. Register Field Descriptions
Bit
Field
Access
Reset
Description
VOUT_
COMMAND
15:0
RW
NVM
Sets the output voltage target through the PMBus interface.
At power up, the reset value of VOUT_COMMAND is derived from either pin-detection on the VSEL pin, or from
the NVM, depending on the VOUT_COMMAND bit in PIN_DETECT_OVERRIDE.
When the VOUT_COMMAND bit in PIN_DETECT_OVERRIDE = 0b, the default value of VOUT_COMMAND is
restored from NVM at power-on reset or RESTORE_USER_ALL.
When the VOUT_COMMAND bit in PIN_DETECT_OVERRIDE = 1b, the default value of VOUT_COMMAND is
derived from pin-detection on the VSEL pin, at power-on reset or RESTORE_USER_ALL.
This default value, whether derived from pin detection, or NVM becomes the “default” output voltage (also
referred to as “VBOOT”), and is stored in RAM separately from the current value of VOUT_COMMAND.
BOOT Voltage Behavior
The RESET_FLT bit in MISC_OPTIONS selects the VOUT_COMMAND behavior following a fault-related
shutdown. When RESET_FLT = 0b, the device retains the current value of VOUT_COMMAND during HICCUP
after a fault. When RESET_FLT = 1b, VOUT_COMMAND will reset to the last detected VSEL voltage or the
NVM STORED value for VOUT_COMMAND as selected by the VOUT_COMMAND bit in MISC_OPTIONS.
Data Validity
Writes to VOUT_COMMAND for which the resulting value, including any offset from VOUT_TRIM is greater than
the current VOUT_MAX or less than the current VOUT_MIN, causes the reference DAC to move to the value
specified by VOUT_MIN or VOUT_MAX respectively, and causes the VOUT_MAX_MIN_WARNING fault
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condition, setting the appropriate bits in STATUS_WORD, STATUS_VOUT and notifying the host per the PMBus
1.3.1 Part II specification, section 10.2.
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7.6.20 (22h) VOUT_TRIM
CMD Address
Write Transaction:
Read Transaction:
Format:
22h
Write Word
Read Word
SLINEAR16, absolute only per (20h) VOUT_MODE.
Phased:
No
NVM Backup:
Updates:
EEPROM
On-the-fly
VOUT_TRIM is used to apply a fixed offset voltage to the output voltage command value. Output voltage
changes due to VOUT_TRIM occur at the rate specified by (27h) VOUT_TRANSITION_RATE.
图7-26. (22h) VOUT_TRIM Register Map
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
VOUT_TRIM (High Byte)
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
VOUT_TRIM (Low Byte)
LEGEND: R/W = Read/Write; R = Read only
表7-33. Register Field Descriptions
Bit
Field
Access
Reset
Description
VOUT_
TRIM
15:0
RW
See Below
Output voltage offset. SLINEAR16 (two’s complement) format
Limited NVM Backup
Only 8 bits of NVM backup are provided for this command. While the VOUT_TRIM command follows the (20h)
VOUT_MODE exponent, NVM backup is stored with an exponent -12 and stored values are limited to +127 to –
128 with an exponent –12 irrespective of (20h) VOUT_MODE.
Data Validity
Referring to the data validity table in (21h) VOUT_COMMAND (reproduced below), the output voltage value
(including any offset from VOUT_TRIM, VOUT_COMMAND, VOUT_MARGIN, …) may not exceed the values
supported by the DAC hardware.
Programming a (21h) VOUT_COMMAND + (22h) VOUT_TRIM value greater than the maximum value
supported by the DAC hardware but less than (24h) VOUT_MAX result in the regulated output voltage clamping
at the maximum value supported by the DAC hardware without setting the VOUT_MAX_MIN bit in (7Ah)
STATUS_VOUT.
表7-34. VOUT_COMMAND / VOUT_MARGIN + VOUT_TRIM Data Validity (Linear Format)
Valid VOUT_COMMAND / Margin +
VOUT_SCALE_LOOP
Internal Divider
VOUT_TRIM Values
0.000V to 0.700 V
0.000 V to 1.400 V
0.000 V to 2.800 V
0.000 V to 6.000 V
1.0
0.5
None
1:1
0.25
0.125
1:3
1:7
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The minimum and maximum valid data values for VOUT_TRIM follow the description in (21h)
VOUT_COMMAND. Attempts to write VOUT_TRIM to any value outside those specified as valid are considered
invalid or unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate status bits, and
notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
Writes to VOUT_TRIM for which the resulting output voltage is greater than the current (24h) VOUT_MAX, or
less than the current (2Bh) VOUT_MIN, cause the reference DAC to move to the value specified by (2Bh)
VOUT_MIN or (24h) VOUT_MAX, respectively, and cause the VOUT_MAX_MIN_WARNING fault condition,
setting the appropriate bits in (79h) STATUS_WORD and (7Ah) STATUS_VOUT and notifying the host per the
PMBus 1.3.1 Part II specification, section 10.2.
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7.6.21 (24h) VOUT_MAX
CMD Address
Write Transaction:
Read Transaction:
Format:
24h
Write Word
Read Word
ULINEAR16, Absolute Only per VOUT_MODE
Phased:
No
NVM Backup:
Updates:
EEPROM or Pin Detection
On-the-fly
The VOUT_MAX command sets an upper limit on the output voltage the unit and can command regardless of
any other commands or combinations. The intent of this command is to provide a safeguard against a user
accidentally setting the output voltage to a possibly destructive level.
图7-27. (24h) VOUT_MAX Register Map
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
VOUT_MAX (High Byte)
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
VOUT_MAX (Low Byte)
LEGEND: R/W = Read/Write; R = Read only
表7-35. Register Field Descriptions
Bit
Field
Access
Reset
Description
VOUT_
MAX
Maximum output voltage. ULINEAR16 absolute per the setting of VOUT_ MODE.
Refer to the following description for data validity.
15:0
RW
NVM
While conversion is enabled, any output voltage change (including VOUT_COMMAND, VOUT_TRIM, and
margin operations) that causes the new target voltage to be greater than the current value of VOUT_MAX cause
the VOUT_MAX_MIN_WARNING fault condition. This result causes the TPSM8D6B24 to:
• Set to the output voltage to current value of VOUT_MAX, at the slew rate defined by
VOUT_TRANSITION_RATE.
• Set the NONE OF THE ABOVE bit in the STATUS_BYTE.
• Set the VOUT bit in the STATUS_WORD.
• Set the VOUT_MIN_MAX warning bit in STATUS_VOUT.
• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.
Although the scenario is uncommon, note that the same response results if the user attempted to program
VOUT_MAX less than the current output voltage target.
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7.6.22 (25h) VOUT_MARGIN_HIGH
CMD Address
Write Transaction:
Read Transaction:
Format:
25h
Write Word
Read Word
ULINEAR16, per VOUT_MODE
Phased:
No
NVM Backup:
Updates:
EEPROM
On-the-fly
The VOUT_MARGIN_HIGH command loads the unit with the voltage to which the output is to be changed when
the OPERATION command is set to “Margin High.” Output voltage transitions during margin operation occur
at the slew rate defined by VOUT_TRANSITION_RATE.
When the MARGIN bits in the OPERATION command indicate “Margin High,”the output voltage is updated to
the value of VOUT_MARGIN_HIGH + VOUT_TRIM.
图7-28. (25h) VOUT_MARGIN_HIGH Register Map
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
VOUT_MARGH (High Byte)
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
VOUT_MARGH (Low Byte)
LEGEND: R/W = Read/Write; R = Read only
表7-36. Register Field Descriptions
Bit
Field
Access
Reset
Description
VOUT_
MARGH
Margin High output voltage. ULINEAR16 relative or absolute per the setting of
VOUT_ MODE
15:0
RW
NVM
The minimum and maximum valid data values for VOUT_MARGIN_HIGH follow the description in
VOUT_COMMAND. That is, the total combined output voltage, including VOUT_MARGIN_HIGH and
VOUT_TRIM, follow the values allowed by the current VOUT_MAX setting.
Attempts to write (25h) VOUT_MARGIN_HIGH to any value outside those specified as valid are considered
invalid or unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate status bits and
notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
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7.6.23 (26h) VOUT_MARGIN_LOW
CMD Address
Write Transaction:
Read Transaction:
Format:
26h
Write Word
Read Word
ULINEAR16, per VOUT_MODE
Phased:
No
NVM Backup:
EEPROM
The VOUT_MARGIN_LOW command loads the unit with the voltage to which the output is to be changed when
the OPERATION command is set to “Margin Low.”Output voltage transitions during margin operation occur at
the slew rate defined by VOUT_TRANSITION_RATE.
When the MARGIN bits in the OPERATION command indicate “Margin Low,” the output voltage is updated to
the value of VOUT_MARGIN_LOW + VOUT_TRIM.
图7-29. (26h) VOUT_MARGIN_LOW Register Map
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
VOUT_MARGIN_LOW (High Byte)
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
VOUT_MARGIN_LOW (Low Byte)
LEGEND: R/W = Read/Write; R = Read only
表7-37. Register Field Descriptions
Bit
Field
Access
Reset
Description
VOUT_
MARGL
Margin Low output voltage. ULINEAR16 relative or absolute per the setting of
VOUT_ MODE
15:0
RW
NVM
The minimum and maximum valid data values for VOUT_MARGIN_LOW follow the description in
VOUT_COMMAND. Attempts to write (26h) VOUT_MARGIN_LOW to any value outside those specified as valid
are considered invalid or unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate
status bits and notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
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7.6.24 (27h) VOUT_TRANSITION_RATE
CMD Address
Write Transaction:
Read Transaction:
Format:
27h
Write Word
Read Word
SLINEAR11 per CAPABILITY
Phased:
No
NVM Backup:
Updates:
EEPROM
On-the-fly
The VOUT_TRANSITION_RATE command sets the slew rate at which any output voltage changes during
normal power conversion occur. This commanded rate of change does not apply when the unit is commanded to
turn on or to turn off. The units are mV/μs.
图7-30. (27h) VOUT_TRANSITION_RATE Register Map
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
VOTR_EXP
VOTR_MAN
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
VOTR_MAN
LEGEND: R/W = Read/Write; R = Read only
表7-38. Register Field Descriptions
Bit
Field
Access
Reset
Description
Linear format two’s complement exponent. Exponent = –4, LSB = 0.0625 mV/
μs
15:11
VOTR_ EXP
RW
11100b
VOTR_
MAN
10:0
RW
NVM
Linear format two’s complement mantissa
Note that every binary value between the minimum and maximum values is writable and readable, but that the
actual output voltage slew rate is set to the nearest supported value.
VOUT_TRANSITION RATE can be programmed from 0.067 mV/µs to 15.933 mV/µs.
Attempts to write (27h) VOUT_TRANSITION_RATE to any value outside those specified as valid are considered
invalid or unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate status bits and
notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
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7.6.25 (29h) VOUT_SCALE_LOOP
CMD Address
Write Transaction:
Read Transaction:
Format:
29h
Write Word
Read Word
SLINEAR11 per CAPABILITY
No
Phased:
Conversion Disable: on-the-fly. Conversion Enable: hardware update blocked. To update hardware
after write while enabled, store to NVM with STORE_USER_ALL and RESTORE_USER_ALL or
cycle AVIN below UVLO.
Updates:
NVM Backup:
EEPROM or Pin Detection
The VOUT_SCALE_LOOP command allows PMBus devices to map between the commanded voltage and the
voltage at the control circuit input. In the TPSM8D6B24, VOUT_SCALE_LOOP also programs an internal
precision resistor divider so no external divider is required.
图7-31. (29h) VOUT_SCALE_LOOP Register Map
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
VOSL_EXP
VOSL_MAN
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
VOSL_MAN
LEGEND: R/W = Read/Write; R = Read only
表7-39. Register Field Descriptions
Bit
Field
Access
Reset
Description
15:11
VOSL_ EXP
RW
11001b
Linear format two’s complement exponent
VOSL_
MAN
10:0
RW
NVM
Linear format two’s complement mantissa
Data Validity
Every binary value between the minimum and maximum supported values is writable and readable. However,
not every combination is supported in hardware. Refer to 表7-40:
表7-40. Accepted Values
VOUT_SCALE_LOOP (DECODED)
Less than or equal to 0.125
0.125 < VOSL ≤0.25
Internal Divider Scaling Factor
0.125
0.25
0.5
0.25 < VOSL ≤0.5
Greater than 0.5
1.0
Attempts to write (29h) VOUT_SCALE_LOOP to any value outside those specified as valid are considered
invalid or unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate status bits and
notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
If a (29h) VOUT_SCALE_LOOP value other than a supported internal divider scaling factor is programmed into
(29h) VOUT_SCALE_LOOP and (21h) VOUT_COMMAND to VREF scale factors are calculated based on the
actual (29h) VOUT_SCALE_LOOP value. (29h) VOUT_SCALE_LOOP values other than supported internal
divider scaling factors can produce a mismatch between (21h) VOUT_COMMAND and the actual commanded
output voltage.
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7.6.26 (2Bh) VOUT_MIN
CMD Address
Write Transaction:
Read Transaction:
Format:
2Bh
Write Word
Read Word
ULINEAR16, absolute Only per VOUT_MODE
Phased:
No
Updates:
On-the-fly
NVM Backup:
EEPROM or Pin Detection
The VOUT_MIN command sets a lower limit on the output voltage the unit can command regardless of any other
commands or combinations. The intent of this command is to provide a safeguard against a user accidentally
setting the output voltage to a level that renders the load inoperable.
图7-32. (2Bh) VOUT_MIN Register Map
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
VOUT_MIN (High Byte)
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
VOUT_MIN (Low Byte)
LEGEND: R/W = Read/Write; R = Read only
表7-41. Register Field Descriptions
Bit
Field
Access
Reset
Description
15:0
VOUT_ MIN
RW
NVM
Minimum output voltage. ULINEAR16 absolute per the setting of VOUT_ MODE.
During power conversion, any output voltage change (including VOUT_COMMAND, VOUT_TRIM, and margin
operations) that causes the new target voltage to be less than the current value of VOUT_MIN causes the
VOUT_MAX_MIN_WARNING fault condition. These results cause the TPSM8D6B24 to:
• Set to the output voltage to current value of VOUT_MIN at the slew rate defined by
VOUT_TRANSITION_RATE.
• Set the NONE OF THE ABOVE in the STATUS_BYTE.
• Set the VOUT bit in the STATUS_WORD.
• Set the VOUT_MIN_MAX warning bit in STATUS_VOUT.
• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.
Although the scenario is uncommon, note that the same response results if the user attempted to program
VOUT_MAX greater than the current output voltage target.
Data Validity
The minimum and maximum valid data values for VOUT_MIN follow those of VOUT_MAX. Attempts to write
(2Bh) VOUT_MIN to any value outside those specified as valid are considered invalid or unsupported data and
cause the TPSM8D6B24 to respond by flagging the appropriate status bits and notifying the host according to
the PMBus 1.3.1 Part II specification section 10.9.3.
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7.6.27 (33h) FREQUENCY_SWITCH
CMD Address
Write Transaction:
Read Transaction:
Format:
33h
Write Word
Read Word
SLINEAR11, per CAPABILITY
No
Phased:
Conversion Disable: on-the-fly. Conversion Enable: hardware update blocked. To update hardware
after write while enabled, store to NVM with STORE_USER_ALL and RESTORE_USER_ALL or
cycle AVIN below UVLO.
Updates:
NVM Backup:
EEPROM or Pin Detection
FREQUENCY_SWITCH sets the switching frequency of the active channel in kHz.
图7-33. (33h) FREQUENCY_SWITCH Register Map
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
FSW_EXP
FSW_MAN
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
FSW_MAN
LEGEND: R/W = Read/Write; R = Read only
表7-42. Register Field Descriptions
Bit
Field
Access
RW
Reset
NVM
NVM
Description
Linear format two’s complement exponent
On reset, FSW_EXP is auto-generated based on the switching frequency stored in
NVM.
15:11
10:0
FSW_ EXP
FSW_ MAN
RW
Linear format two’s complement mantissa. Refer to 表7-43.
表7-43. Supported Switching Frequency Settings
FREQUENCY_SWITCH (Decoded)
Effective Switching Frequency (kHz)
Less than 250 kHz
225
275
325
375
450
550
650
750
900
1100
1300
1500
251 ≤FSW < 300 kHz
301 ≤FSW < 350 kHz
351 ≤FSW < 410 kHz
411 ≤FSW < 500 kHz
501 ≤FSW < 600 kHz
601 ≤FSW < 700 kHz
701 ≤FSW < 820 kHz
821 ≤FSW < 1000 kHz
1001 ≤FSW < 1200 kHz
1201 ≤FSW < 1400 kHz
1401 ≤FSW < 1650 kHz
FREQUENCY_SWITCH values greater than 1100 kHz can require higher VDD5 current than can be provided by
the internal AVIN to VDD5 linear regulator. Programming FREQUENCY_SWITCH to a value greater than 1100
kHz without an external source to VDD5 can result in repeated start-up and shutdown attempt.
FRQUENCY_SWITCH values greater than 1100 kHz are not recommended for stacked multi-phase operation.
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7.6.28 (35h) VIN_ON
CMD Address
Write Transaction:
Read Transaction:
Format:
35h
Write Word
Read Word
SLINEAR11, per CAPABILITY
Phased:
No
NVM Backup:
Updates:
EEPROM
On-the-fly
The VIN_ON command sets the value of the input voltage, in Volts, at which the unit starts power conversion.
图7-34. (35h) VIN_ON Register Map
15
14
13
RW
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
VON_EXP
VON_MAN
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
VON_MAN
LEGEND: R/W = Read/Write; R = Read only
表7-44. Register Field Descriptions
Bit
Field
Access
Reset
Description
15:11
VON_ EXP
RW
11110b
Linear format two’s complement exponent, –2
Linear format two’s complement mantissa. Refer to the following text for more
10:0
VON_ MAN
RW
NVM
information.
Attempts to write (35h) VIN_ON to any value outside those specified as valid are considered invalid or
unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate status bits and notifying
the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
Command Resolution and NVM Store or Restore Behavior
(35h) VIN_ON and (36h) VIN_OFF have limited hardware range and resolution as well as limited NVM
allocation. While the command accepts any binary value within the valid range, values not exactly represented
by the hardware resolution are rounded down to the next lower supported threshold for implementation or upon
restore from NVM during power-on reset or (16h) RESTORE_USER_ALL. (35h) VIN_ON hardware supports all
values from 2.50 V to 18.25 in 0.25-V steps.
Note that the LOW_VIN fault condition is masked until the sensed input voltage exceeds the VIN_ON threshold
for the first time following a power-on reset. The Control/Enable pin toggles and EEPROM store and restore
operations do not reset this masking.
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7.6.29 (36h) VIN_OFF
CMD Address
Write Transaction:
Read Transaction:
Format:
36h
Write Word
Read Word
SLINEAR11, per CAPABILITY
Phased:
No
NVM Backup:
Updates:
EEPROM
On-the-fly
The (36h) VIN_OFF command sets the value of the PVIN input voltage, in Volts, at which the unit should stop
power conversion. If the power conversion enable conditions as defined by (02h) ON_OFF_CONFIG are met
and PVIN is less than (36h) VIN_OFF, the output off due to low VIN bit in (7Ch) STATUS_INPUT is set.
图7-35. (36h) VIN_OFF Register Map
15
14
13
RW
12
11
10
9
8
RW
RW
RW
R
RW
RW
RW
VOFF_EXP
VOFF_MAN
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
VOFF_MAN
LEGEND: R/W = Read/Write; R = Read only
表7-45. Register Field Descriptions
Bit
Field
Access
RW
Reset
11110b
NVM
Description
Linear format two’s complement exponent
Linear format two’s complement mantissa. Refer to the following text.
15:11
10:0
VOFF_ EXP
VOFF_
MAN
RW
Attempts to write (36h) VIN_OFF to any value outside those specified as valid are considered invalid or
unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate status bits and notifying
the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
Command Resolution and NVM Store or Restore Behavior
(35h) VIN_ON and (36h) VIN_OFF have limited hardware range and resolution as well as limited NVM
allocation. While the command will accept any binary value within the valid range, values not exactly represented
by the hardware resolution will be rounded down to the next lower supported threshold for implementation or
upon restoration from NVM during Power-On Reset or (16h) RESTORE_USER_ALL. (36h) VIN_OFF hardware
supports all values from 2.25 V to 18.25 in 0.25-V steps.
While it is possible to set (36h) VIN_OFF equal to or greater than (35h) VIN_ON, it is not advisable and can
produce rapid enabling and disabling of conversion and undesirable operation.
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7.6.30 (37h) INTERLEAVE
CMD Address
Write Transaction:
Read Transaction:
Format:
37h
Write Word (Single Phase Only)
Read Word
Four Hexadecimal values
No, Read only in Multi-phase stack
On-the-fly
Phased:
Updates:
NVM Backup:
EEPROM or Pin Detection
The INTERLEAVE command sets the phase delay between the external SYNC (IN or OUT) and the internal
PMW oscillator.
图7-36. (37h) INTERLEAVE Register Map
15
R
14
R
13
12
11
10
9
8
R
R
RW
RW
RW
RW
Not Used
GROUPID
ORDER
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
NUM_GROUP
LEGEND: R/W = Read/Write; R = Read only
表7-46. Register Field Descriptions
Bit
15:12
11:8
Field
Access
R
Reset
Description
Not Used
GROUPID
0h
Not used. Set to b'0000.
Group ID Number. Set to 0h to Fh.
RW
NVM
NUM_GRO
UP
Number in Group. Sets the number of phases positions and the phase shift for
each value of ORDER. Set to value 1h to 4h.
7:4
3:0
RW
RW
NVM
NVM
Order within the group. Each value of ORDER adds a phase shift equal to 360° /
NUM_GROUP. Set to value 0h to NUM_GROUP –1.
ORDER
表7-47. Supported INTERLEAVE Settings
Number in Group
Order
Phase Position (°)
1
2
2
3
3
3
4
4
4
4
0
0
1
0
1
2
0
1
2
3
0
0
180
0
120
240
0
90
180
270
The (37h) INTERLEAVE command is used to arrange multiple devices sharing a common SYNC signal in time.
The phase delay added to each device is equal to 360° / Number in Group × Order. To prevent misaligning the
phases of a multi-phase stack, (37h) INTERLEAVE is read only when the TPSM8D6B24 is configured as part of
a multi-phase stack. The Read/Write status of the (37h) INTERLEAVE command is set based on the state of the
(ECh) MFR_SPECIFIC_28 (STACK_CONFIG) command at power-on and is not updated if (ECh)
MFR_SPECIFIC_28 (STACK_CONFIG) is later changed. If (37h) INTERLEAVE is used to program the phase
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position of a standalone device, the TPSM8D6B24 must be configured as a standalone device at power-on to
ensure write capability of the (37h) INTERLEAVE command.
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7.6.31 (38h) IOUT_CAL_GAIN
CMD Address
Write Transaction:
Read Transaction:
Format:
38h
Write Word
Read Word
SLINEAR11, per CAPABILITY
Phased:
No
NVM Backup:
Updates:
EEPROM
On-the-fly
(38h) IOUT_CAL_GAIN is used to trim the gain of the output current reported by the READ_IOUT command.
The value is a unitless gain factor applied to the internally sensed current measurement. The register defaults to
a value of 1.
图7-37. (38h) IOUT_CAL_GAIN Register Map
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
IOCG_EXP
IOCG_MAN
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
IOCG_MAN
LEGEND: R/W = Read/Write; R = Read only
表7-48. Register Field Descriptions
Bit
Field
Access
RW
Reset
11001b
NVM
Description
15:11
10:0
IOCG_ EXP
IOCG_ MAN
Linear format, two’s complement exponent
Linear format, two’s complement mantissa
RW
Changing
(38h)
IOUT_CAL_GAIN
adjusts
the
overcurrent
setting
programmed
by
(46h)
IOUT_OC_FAULT_LIMIT or (4Ah) IOUT_OC_WARN_LIMIT according to the new value of (38h)
IOUT_CAL_GAIN.
Attempts to write (38h) IOUT_CAL_GAIN to any value outside those specified as valid are considered invalid or
unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate status bits and notifying
the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
Command Resolution and NVM Store or Restore Behavior
The (38h) IOUT_CAL_GAIN command is implemented using the TPSM8D6B24 internal telemetry system. As a
result, the value of this command can be programmed with very high resolution using the linear format. However,
the TPSM8D6B24 provides only limited NVM-backed options for this command. Following a power-cycle or NVM
Store or Restore operation, the value is rounded to the nearest 1 / 64 with a maximum supported value of 1.984
(1 63 / 64).
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7.6.32 (39h) IOUT_CAL_OFFSET
CMD Address
Write Transaction:
Read Transaction:
Format:
39h
Write Word
Read Word
SLINEAR11, per CAPABILITY
Yes
Phased:
NVM Backup:
Updates:
EEPROM
On-the-fly
IOUT_CAL_OFFSET is used to compensate for offset errors in the READ_IOUT command. Each PHASE in a
stack can apply an independent IOUT_CAL_OFFSET value. The effective IOUT_CAL_OFFSET value for a
stack is equal to the sum of the IOUT_CAL_OFFSET values from all devices in the stack.
图7-38. (39h) IOUT_CAL_OFFSET Register Map
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
IOCOS_EXP
IOCOS_MAN
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
IOCOS_MAN
LEGEND: R/W = Read/Write; R = Read only
表7-49. Register Field Descriptions
Bit
Field
Access
Reset
Description
IOCOS_
EXP
15:11
RW
11100b
Linear format, two’s complement exponent
Linear format, two’s complement mantissa
IOCOS_
MAN
10:0
RW
NVM
Attempts to write (39h) IOUT_CAL_OFFSET to any value outside those specified as valid are considered invalid
or unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate status bits and
notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
Command Resolution and NVM Store or Restore Behavior
The (39h) IOUT_CAL_OFFSET command is implemented using the TPSM8D6B24 internal telemetry system. As
a result, the value of this command can be programmed with very high resolution using the linear format.
However, the TPSM8D6B24 only provides limited NVM-backed options for this command. Following a power-
cycle or NVM Store and Restore operation, the value is restored to one of the supported values, according to the
value present during the last NVM store operation. During operation, updates to this command with higher
resolution are supported, and accepted as long as they fall between the minimum and maximum supported
values given.
Phased Command Behavior
PHASE = 00h to 03h: Writes to (39h) IOUT_CAL_OFFSET modify the current sense offset for individual phases.
Reads to (39h) IOUT_CAL_OFFSET return the configured current sense offset for individual phases.
PHASE = FFh: Writes to (39h) IOUT_CAL_OFFSET modify the total current sense offset for all individual
phases. Individual phases are assigned an IOUT_CAL_OFFSET value equal to the written value divided by the
number of phases. Reads to (39h) IOUT_CAL_OFFSET return the configured current sense offset for PHASE =
00h times the number of phases.
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7.6.33 (40h) VOUT_OV_FAULT_LIMIT
CMD Address
Write Transaction:
Read Transaction:
Format:
40h
Write Word
Read Word
ULINEAR16 Relative or Absolute per VOUT_MODE
Phased:
No
NVM Backup:
Updates:
EEPROM
On-the-fly
The VOUT_OV_FAULT_LIMIT command sets the value of the output voltage measured at the sense or output
pins that causes an output overvoltage fault. VOUT_OV_FAULT_LIMIT sets an overvoltage threshold relative to
the current VOUT_COMMAND. Updates to VOUT_COMMAND do not update the value of
VOUT_OV_FAULT_LIMIT when the absolute format is used. Note that even with VOUT_MODE configured in
absolute format, the true overvoltage fault limit remains relative to the current VOUT_COMMAND.
VOUT_OV_FAULT_LIMIT is active as soon as the TPSM8D6B24 completes its power-on reset, even if output
conversion is disabled.
Following
an
overvoltage
fault
condition,
the
TPSM8D6B24
responds
according
to
VOUT_OV_FAULT_RESPONSE.
图7-39. (40h) VOUT_OV_FAULT_LIMIT Register Map
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
VOUT_OVF (High Byte)
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
VOUT_OVF (Low Byte)
LEGEND: R/W = Read/Write; R = Read only
表7-50. Register Field Descriptions
Bit
Field
Access
Reset
Description
15:0
VOUT_ OVF
RW
See Below Sets the overvoltage fault limit. Format is per VOUT_ MODE.
Hardware Support and Value Mapping
The hardware for VOUT_OV_FAULT_LIMIT is implemented as a fixed percentage of the current output voltage
target. Depending on the VOUT_MODE setting, the value written to VOUT_OV_FAULT_LIMIT must be mapped
to the hardware percentage.
Programmed values not exactly equal to one of the hardware relative values are rounded up to the next
available relative value supported by hardware. The hardware supports values from 105% to 140% of
VOUT_COMMAND in 2.5% steps. When output conversion is disabled, the hardware supports values from
110% to 140% of VOUT_COMMAND in 10% steps.
Attempts to write VOUT_OV_FAULT_LIMIT to any value outside those specified as valid are considered invalid
or unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate status bits and
notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
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7.6.34 (41h) VOUT_OV_FAULT_RESPONSE
CMD Address
Write Transaction:
Read Transaction:
Format:
41h
Write Byte
Read Byte
Unsigned Binary (1 byte)
No
Phased:
NVM Backup:
Updates:
EEPROM
On-the-fly
The VOUT_OV_FAULT_RESPONSE command instructs the device on what action to take in response to an
output overvoltage fault. Upon triggering the overvoltage fault, the TPSM8D6B24 controller responds according
to the following data byte, and the following actions are taken:
• Set the VOUT_OV_FAULT bit in the STATUS_BYTE.
• Set the VOUT bit in the STATUS_WORD.
• Set the VOUT_OVF bit in the STATUS_VOUT register.
• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.
图7-40. (41h) VOUT_OV_FAULT_RESPONSE Register Map
7
6
5
4
3
2
1
RW
0
RW
RW
RW
RW
RW
RW
RW
VO_OV_RESP
VO_OV_RETRY
VO_ OV_ DELAY
LEGEND: R/W = Read/Write; R = Read only
表7-51. Register Field Descriptions
Bit
Field
Access
Reset
Description
Output overvoltage response
00b: Ignore. Continue operating without interruption.
01b: Shut down. Shut down and retry according to VO_OV_RETRY.
10b: Shut down. Shut down and retry according to VO_ OV_ RETRY.
11b: Invalid or unsupported
VO_OV_RE
SP
7:6
RW
NVM
0d: Do not attempt to restart (latch off).
1d - 6d: After shutting down, wait one HICCUP period, and attempt to restart up to
one to six times. After one to six failed restart attempts, do not attempt to restart
(latch off).
7d: After shutting down, wait one HICCUP period, and attempt to restart
indefinitely, until commanded OFF, or a successful start-up occurs.
VO_OV_RE
TRY
5:3
2:0
RW
RW
NVM
NVM
VO_OV_DE
LAY
0d: VO_OV HICCUP period is equal to TON_RISE.
1d - 7d: VO_OV HICCUP period is equal to one to seven times TON_RISE.
Attempts to write VOUT_OV_FAULT_RESPONSE to any value outside those specified as valid are considered
invalid or unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate status bits and
notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
A restart attempt is successful and the restart limit counter is reset to 0 when no fault with a shutdown response
is observed after one (61h) TON_RISE time after completing (61h) TON_RISE or after (62h)
TON_MAX_FAULT_LIMIT if (62h) TON_MAX_FAULT_LIMIT is not set to 0 ms (Disabled).
If (41h) VOUT_OV_FAULT_RESPONSE is configured to ignore a VOUT_OV_FAULT, and a VOUT_OV_FAULT
is present at the time of enabling the device, the device does not start up. To ensure the part ignores any
potential VOUT_OV_FAULT at start-up, set the (40h) VOUT_OV_FAULT_LIMIT greater than the maximum
possible input voltage applied during start-up.
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7.6.35 (42h) VOUT_OV_WARN_LIMIT
CMD Address
Write Transaction:
Read Transaction:
Format:
42h
Write Word
Read Word
ULINEAR16 Relative or Absolute per VOUT_MODE
Phased:
No
NVM Backup:
Updates:
EEPROM
On-the-fly
The VOUT_OV_WARN_LIMIT command sets the value of the output voltage at the sense or output pins that
causes an output voltage high warning. This value is typically less than the output overvoltage threshold. The
OV_WARN_LIMIT sets an overvoltage threshold relative to the current VOUT_COMMAND. Updates to
VOUT_COMMAND do not update the value of VOUT_OV_FAULT_LIMIT when the absolute format is used.
When the sensed output voltage exceeds the VOUT_OV_WARN_LIMIT threshold, the following actions are
taken:
• Set the VOUT bit in the STATUS_WORD.
• Set the VOUT_OVW bit in the STATUS_VOUT register.
• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.
图7-41. (42h) VOUT_OV_WARN_LIMIT Register Map
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
VOUT_OVW (High Byte)
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
VOUT_OVW (Low Byte)
LEGEND: R/W = Read/Write; R = Read only
表7-52. Register Field Descriptions
Bit
Field
Access
Reset
Description
VOUT_
OVW
15:0
RW
NVM
Sets the overvoltage warning limit. Format is per VOUT_ MODE.
Hardware Support and Value Mapping
The hardware for VOUT_OV_WARN_LIMIT is implemented as a fixed percentage of the current output voltage
target. Depending on the VOUT_MODE setting, the value written to VOUT_OV_WARN_LIMIT must be mapped
to a hardware percentage.
Programmed values not exactly equal to one of the hardware relative values shall be rounded up to the next
available relative value supported by hardware. The hardware supports values from 103% to 116%
VOUT_COMMAND in 1% steps.
Attempts to write (42h) VOUT_OV_WARN_LIMIT to any value outside those specified as valid are considered
invalid or unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate status bits and
notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
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7.6.36 (43h) VOUT_UV_WARN_LIMIT
CMD Address
Write Transaction:
Read Transaction:
Format:
43h
Write Word
Read Word
ULINEAR16 Relative or Absolute per VOUT_MODE
Phased:
No
NVM Backup:
Updates:
EEPROM
On-the-fly
The VOUT_UV_WARN_LIMIT command sets the value of the output voltage at the sense or output pins that
causes an output voltage low warning. The VOUT_UV_WARN_LIMIT sets an undervoltage threshold relative to
the current VOUT_COMMAND. Updates to VOUT_COMMAND do not update VOUT_UV_WARN_LIMIT when
the absolute format is used.
When the sensed output voltage exceeds the VOUT_UV_WARN_LIMIT threshold, the following actions are
taken:
• Set the VOUT bit in the STATUS_WORD.
• Set the VOUT_UVW bit in the STATUS_VOUT register.
• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.
图7-42. (43h) VOUT_UV_WARN_LIMIT Register Map
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
VOUT_UVW (High Byte)
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
VOUT_UVW (Low Byte)
LEGEND: R/W = Read/Write; R = Read only
表7-53. Register Field Descriptions
Bit
Field
Access
Reset
Description
VOUT_
UVW
15:0
RW
NVM
Sets the undervoltage warning limit. Format is per VOUT_ MODE.
Hardware Mapping and Supported Values
The hardware for VOUT_UV_WARN_LIMIT is implemented as a fixed percentage relative to the current output
voltage target. Depending on the VOUT_MODE setting, the value written to VOUT_UV_WARN_LIMIT must be
mapped to the hardware percentage.
Programmed values not exactly equal to one of the hardware relative values is rounded down to the next
available relative value supported by hardware. The hardware supports values from 84% to 97%
VOUT_COMMAND in 1% steps.
Attempts to write (43h) VOUT_UV_WARN_LIMIT to any value outside those specified as valid are considered
invalid or unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate status bits and
notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
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7.6.37 (44h) VOUT_UV_FAULT_LIMIT
CMD Address
Write Transaction:
Read Transaction:
Format:
44h
Write Word
Read Word
ULINEAR16 Absolute per VOUT_MODE
Phased:
No
NVM Backup:
Updates:
EEPROM
On-the-fly
The VOUT_UV_FAULT_LIMIT command sets the value of the output voltage at the sense or output pins that
causes an output voltage fault. The VOUT_UV_FAULT_LIMIT sets an undervoltage threshold relative to the
current VOUT_COMMAND. Updates to VOUT_COMMAND do not update VOUT_UV_FAULT_LIMIT when the
absolute format is used.
When the undervoltage fault condition is triggered, the TPSM8D6B24 responds according to
VOUT_UV_FAULT_RESPONSE.
图7-43. (44h) VOUT_UV_FAULT_LIMIT Register Map
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
VOUT_UVF (High Byte)
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
VOUT_UVF (Low Byte)
LEGEND: R/W = Read/Write; R = Read only
表7-54. Register Field Descriptions
Bit
Field
Access
Reset
Description
VOUT_
UVW
15:0
RW
NVM
Sets the undervoltage fault limit. Format is per VOUT_ MODE.
Hardware Mapping and Supported Values
The hardware for VOUT_UV_FAULT_LIMIT is implemented as a fixed percentage relative to the current output
voltage target. Depending on the VOUT_MODE setting, the value written to VOUT_UV_FAULT_LIMIT must be
mapped to the hardware percentage.
Programmed values not exactly equal to one of the hardware relative values are rounded down to the next
available relative value supported by hardware. The hardware supports values from 60% to 95% of
VOUT_COMMAND in 2.5% steps.
Attempts to write (44h) VOUT_UV_FAULT_LIMIT to any value outside those specified as valid are considered
invalid orr unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate status bits and
notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
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7.6.38 (45h) VOUT_UV_FAULT_RESPONSE
CMD Address
Write Transaction:
Read Transaction:
Format:
45h
Write Byte
Read Byte
Unsigned Binary (1 byte)
No
Phased:
NVM Backup:
Updates:
EEPROM
On-the-fly
The VOUT_UV_FAULT_RESPONSE command instructs the device on what action to take in response to an
output undervoltage fault. Upon triggering the overvoltage fault, the TPSM8D6B24 responds according to the
following data byte, and the following actions are taken:
• Set the NONE OF THE ABOVE bit in the STATUS_BYTE.
• Set the VOUT bit in the STATUS_WORD.
• Set the VOUT_UVF bit in the STATUS_VOUT register.
• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.
图7-44. (45h) VOUT_UV_FAULT_RESPONSE Register Map
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
VO_UV_RESP
VO_UV_RETRY
VO_UV_DLY
LEGEND: R/W = Read/Write; R = Read only
表7-55. Register Field Descriptions
Bit
Field
Access
Reset
Description
Output undervoltage response
00b: Ignore. Continue operating without interruption.
01b: Shutdown after delay, as set by VO_UV_DELY
10b: Shutdown Immediately
VO_ UV_
RESP
7:6
RW
NVM
Other: Invalid or unsupported
Output undervoltage retry
0d: Do not attempt to restart (latch off).
1d-6d: After shutting down, wait one HICCUP period, and attempt to restart up to
one to six times. After one to six failed restart attempts, do not attempt to restart
(latch off).
7d: After shutting down, wait one HICCUP period, and attempt to restart
indefinitely, until commanded OFF, or a successful start-up occurs.
VO_ UV_
RETRY
5:3
2:0
RW
RW
NVM
NVM
Output undervoltage delay time for respond after delay and HICCUP
0d: Shutdown delay of one PWM_CLK, HICCUP equal to TON_RISE
1d: Shutdown delay of one PWM_CLK, HICCUP equal to TON_RISE
2d - 4d: Shutdown delay of three PWM_CLK, HICCUP equal to two to six times
TON_RISE
VO_ UV_
DLY
5d - 7d: Shutdown delay of seven PWM_CLK, HICCUP equal to five to seven times
TON_RISE
Attempts to write (45h) VOUT_UV_FAULT_RESPONSE to any value outside those specified as valid are
considered invalid or unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate
status bits and notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
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7.6.39 (46h) IOUT_OC_FAULT_LIMIT
CMD Address
Write Transaction:
Read Transaction:
Format:
46h
Write Word
Read Word
SLINEAR11 per CAPABILITY
Yes
Phased:
NVM Backup:
Updates:
EEPROM or Pin Detection
On-the-fly
The IOUT_OC_FAULT_LIMIT command sets the value of the output current that causes the overcurrent detector
to indicate an overcurrent fault condition. While each TPSM8D6B24 device in a multi-phase stack has its own
IOUT_OC_FAULT_LIMIT and comparator, the effective current limit of the multi-phase stack is equal to the
lowest IOUT_OC_FAULT_LIMIT setting times the number of phases in the stack.
When
the
overcurrent
fault
is
triggered,
the
TPSM8D6B24
responds
according
to
IOUT_OC_FAULT_RESPONSE.
图7-45. (46h) IOUT_OC_FAULT_LIMIT Register Map
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
IO_OCF_EXP
IO_OCF_MAN
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
IO_OCF_MAN
LEGEND: R/W = Read/Write; R = Read only
表7-56. Register Field Descriptions
Bit
Field
Access
Reset
Description
15:11
IO_OCF_
EXP
RW
11110b
Linear format two’s complement exponent
10:0
Linear format two’s complement mantissa. Refer to the following table.
Multi-phase Stack Current Limit up to 62 A × Number of Phases (PHASE = FFh)
Per Phase OCL: up to 62 A (PHASE ! = FFh)
IO_OCF_
MAN
RW
NVM
Attempts to write (46h) IOUT_OC_FAULT_LIMIT to any value outside those specified as valid are considered
invalid or unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate status bits and
notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
Command Resolution and NVM Store or Restore Behavior
The Per-PHASE (PHASE != FFh) IOUT_OC_FAULT_LIMIT is implemented in analog hardware. The analog
hardware supports current limits from 8 A to 62 A in 2-A steps. Programmed values not exactly equal to
hardware supported values are rounded up to the next available supported value. Values less than 8 A per
device can be written to IOUT_OC_FAULT_LIMIT, but values less than 8 A per device are implemented as 8 A in
hardware. The TPSM8D6B24 provides only limited NVM-backed options for this command. Following a power
cycle or NVM Store or Restore operation, the value is rounded to the nearest NVM supported value. The NVM
supports values up to 62 A in 0.25-A steps.
Phased Command Behavior
Write when PHASE = FFh: Set IOUT_OC_FAULT_LIMIT for each phase to the written value divided by the
number of phases.
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Read when PHASE = FFh: Report the IOUT_OC_FAULT_LIMIT value of PHASE = 00h (loop controller) times
the number of phases.
Write when PHASE != FFh: Set IOUT_OC_FAUL_LIMIT for the current phase to the written value.
Read when PHASE != FFh: Report the IOUT_OC_FAULT_LIMIT value of the current phase.
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7.6.40 (47h) IOUT_OC_FAULT_RESPONSE
CMD Address
Write Transaction:
Read Transaction:
Format:
47h
Write Byte
Read Byte
Unsigned Binary (1 byte)
No
Phased:
NVM Backup:
Updates:
EEPROM
On-the-fly
The IOUT_OC_FAULT_RESPONSE command instructs the device on what action to take in response to an
overcurrent fault. Upon triggering the overcurrent fault, the TPSM8D6B24 responds according to the following
data byte, and the following actions are taken:
• Set the IOUT_OC bit in the STATUS_BYTE.
• Set the IOUT bit in the STATUS_WORD.
• Set the IOUT_OCF bit in the STATUS_IOUT register.
• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.
图7-46. (47h) IOUT_OC_FAULT_RESPONSE Register Map
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
R
R
R
IO_OC_RESP
IO_OC_RETRY
IO_OC_DELAY
LEGEND: R/W = Read/Write; R = Read only
表7-57. Register Field Descriptions
Bit
Field
Access
Reset
Description
Output ovecurrent response
00b: Ignore. Continue operating without interruption.
01b: Ignore. Continue operating without interruption.
10b: Shut down after delay as set by IO_OC_DELAY
11b: Shutdown immediately
IO_OC_RE
SP
7:6
RW
NVM
Output overcurrent retry
0d: Do not attempt to restart (latch off).
1d - 6d: After shutting down, wait one HICCUP period, and attempt to restart up to
one to six times. After one to six failed restart attempts, do not attempt to restart
(latch off).
7d: After shutting down, wait one HICCUP period, and attempt to restart indefinitely
until commanded OFF, or a successful start-up occurs.
IO_OC_RET
RY
5:3
2:0
RW
RW
NVM
NVM
Output overcurrent delay time for respond after delay and HICCUP
0d: Shutdown delay of one PWM_CLK, HICCUP equal to TON_RISE
1d: Shutdown delay of one PWM_CLK, HICCUP equal to TON_RISE
2d - 4d: Shutdown delay of three PWM_CLK, HICCUP equal to two to four times
TON_RISE
IO_OC_DEL
AY
5d - 7d: Shutdown delay of seven PWM_CLK, HICCUP equal to five to seven times
TON_RISE
Attempts to write (47h) IOUT_OC_FAULT_RESPONSE to any value outside those specified as valid are
considered invalid or unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate
status bits and notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
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7.6.41 (4Ah) IOUT_OC_WARN_LIMIT
CMD Address
Write Transaction:
Read Transaction:
Format:
4Ah
Write Word
Read Word
SLINEAR11 per CAPABILITY
Yes
Phased:
NVM Backup:
Updates:
EEPROM or Pin Detection
On-the-fly
The IOUT_OC_WARN_LIMIT command sets the value of the output current that causes the overcurrent detector
to indicate an overcurrent warning condition. The units are amperes.
IOUT_OC_WARN_LIMIT is a phased command. Each phase reports an output current overcurrent warning
independently.
In response to an overcurrent warning condition, the TPSM8D6B24 takes the following action:
• Set the NONE OF THE ABOVE bit in the STATUS_BYTE.
• Set the IOUT bit in the STATUS_WORD.
• Set the IOUT_OCW bit in the STATUS_IOUT register.
• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.
图7-47. (4Ah) IOUT_OC_WARN_LIMIT Register Map
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
IOOCW_EXP
IOOCW_MAN
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
IOOCW_MAN
LEGEND: R/W = Read/Write; R = Read only
表7-58. Register Field Descriptions
Bit
Field
Access
Reset
Description
IOOCW_
EXP
15:11
RW
11110b
Linear format two’s complement exponent
Linear format two’s complement mantissa
IOOCW_
MAN
10:0
RW
NVM
Supported values up to 62 A times the number of phases.
Attempts to write (4Ah) IOUT_OC_WARN_LIMIT to any value outside those specified as valid are considered
invalid or unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate status bits and
notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
Command Resolution and NVM Store or Restore Behavior
The Per-PHASE (PHASE != FFh) IOUT_OC_WARN_LIMIT is implemented in analog hardware. The analog
hardware supports current limits from 8 A to 62 A in 2-A steps. Programmed values not exactly equal to
hardware supported values are rounded up to the next available supported value. Values less than 8 A per
device can be written to IOUT_OC_FAULT_LIMIT, but values less than 8 A per device are implemented as 8 A in
hardware. The TPSM8D6B24 provides only limited NVM-backed options for this command. Following a power-
cycle or NVM Store or Restore operation, the value is rounded to the nearest NVM supported value. The NVM
supports values up to 62 A in 0.25-A steps.
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7.6.42 (4Fh) OT_FAULT_LIMIT
CMD Address
Write Transaction:
Read Transaction:
Format:
4Fh
Write Word
Read Word
SLINEAR11 per CAPABILITY
Yes
Phased:
NVM Backup:
Updates:
EEPROM
On-the-fly
The OT_FAULT_LIMIT command sets the value of the temperature limit, in degrees Celsius, that causes an
overtemperature fault condition.
The converter response to an overtemperature event is described in OT_FAULT_RESPONSE.
图7-48. (4Fh) OT_FAULT_LIMIT Register Map
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
OTF_EXP
OTF_MAN
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
OTF_MAN
LEGEND: R/W = Read/Write; R = Read only
表7-59. Register Field Descriptions
Bit
Field
Access
RW
Reset
00000b
NVM
Description
Linear format two’s complement exponent
Linear format two’s complement mantissa. Refer to the following text.
15:11
10:0
OTF_ EXP
OTF_ MAN
RW
Attempts to write (4Fh) OT_FAULT_LIMIT to any value outside those specified as valid are considered invalid or
unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate status bits and notifying
the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
Command Resolution and NVM Store or Restore Behavior
The (4Fh) OT_FAULT_LIMIT command is implemented using the TPSM8D6B24 internal telemetry system. As a
result, the value of this command can be programmed with very high resolution using the linear format. However,
the TPSM8D6B24 provides only limited NVM-backed options for this command. Following a power-cycle or NVM
Store or Restore operation, the value is restored to the nearest NVM supported value. The NVM supports values
from 0°C to 160°C in 1°C steps. Programming a value of 255°C disables the programmable overtemperature
fault limit without disabling the on-die bandgap thermal shutdown.
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7.6.43 (50h) OT_FAULT_RESPONSE
CMD Address
Write Transaction:
Read Transaction:
Format:
50h
Write Byte
Read Byte
Unsigned Binary (1 byte)
No
Phased:
NVM Backup:
Updates:
EEPROM
On-the-fly
The OT_FAULT_RESPONSE command instructs the device on what action to take in response to an
overtemperature fault. Upon triggering the overtemperature fault, the converter responds per the following data
byte, and the following actions are taken:
• Set the TEMP bit in the STATUS_BYTE.
• Set the OTF bit in the STATUS_TEMPERATURE register.
• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.
The OT Fault hysteresis is set by the (51h) OT_WARN_LIMIT. When (8Dh) READ_TEMPERATURE_1 falls
below (51h) OT_WARN_LIMIT, the overtemperature fault condition is released and restart is allowed if selected
by (50h) OT_FAULT_RESPONSE. If (51h) OT_WARN_LIMIT is programmed higher than (4Fh)
OT_FAULT_LIMIT, a default hysteresis of 20°C is used instead.
图7-49. (50h) OT_FAULT_RESPONSE Register Map
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
OTF_RESP
OT_RETRY
OT_DELAY
LEGEND: R/W = Read/Write; R = Read only
表7-60. Register Field Descriptions
Bit
Field
Access
Reset
Description
Overtemperature fault response
00b: Ignore. Continue operating without interruption.
01b: Delayed shutdown continue operating for 10 ms × OT_DELAY. If OT_FAULT
is still present, shut down and restart according to OT_RETRY.
10b: Immediate Shutdown. Shut down and restart according to OT_RETRY.
11b: Shut down until temperature is below OT_WARN_LIMIT, then restart
according to OT_RETRY*.
7:6
OTF_RESP
RW
NVM
Overtemperature retry
0d: Do not attempt to restart (latch off).
1d-6d: After shutting down, wait one HICCUP period, and attempt to restart up to
one to six times. After one to six failed restart attempts, do not attempt to restart
(latch off). Restart attempts that occur while temperature is above
OT_WARN_LIMIT are not observable but are counted.
7d: After shutting down, wait one HICCUP period, and attempt to restart
indefinitely, until commanded OFF or a successful start-up occurs.
5:3
2:0
OT_RETRY
OT_DELAY
RW
RW
NVM
NVM
Overtemperature delay time for respond after delay and HICCUP
0d: Shutdown delay of 10 ms, HICCUP equal to TON_RISE, HICCUP delay equal
to TON_RISE
1d - 7d: Shutdown delay of 1 to 7 ms, HICCUP equal to two to four times
TON_RISE
Attempts to write (50h) OT_FAULT_RESPONSE to any value outside those specified as valid are considered
invalid or unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate status bits and
notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
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*When (50h) OT_FAULT_RESPONSE OTF_RESP (Bits 7:6) are set to 11b, shut down until temperature is
below (51h) OT_WARN_LIMIT, issuing a (03h) CLEAR_FAULTS command while the temperature is between
(4Fh) OT_FAULT_LIMIT and (51h) OT_WARN_LIMIT can result in the TPSM8D6B24 remaining in the OT
FAULT state until the temperature rises above (4Fh) OT_FAULT_LIMIT or disabled and enabled according to
(02h) ON_OFF_CONFIG.
If (50h) OT_FAULT_RESPONSE is configured to ignore a OT_FAULT, and a OT_FAULT is present at the time of
enabling the device, the device does not start up. To ensure the part ignores any potential OT_FAULT at start-
up, it is recommended to set the (4Fh) OT_FAULT_LIMIT greater than the maximum possible temperature
during start-up.
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7.6.44 (51h) OT_WARN_LIMIT
CMD Address
Write Transaction:
Read Transaction:
Format:
51h
Write Word
Read Word
SLINEAR11 per CAPABILITY
Yes
Phased:
NVM Backup:
Updates:
EEPROM
On-the-fly
The OT_WARN_LIMIT command sets the temperature, in degrees Celsius, of the unit, at which, it indicates an
overtemperature warning alarm. The units are degrees C.
Upon triggering the overtemperature fault, the converter responds per the following data byte, and the following
actions are taken:
• Set the TEMP bit in the STATUS_BYTE.
• Set the OTW bit in the STATUS_TEMPERATURE register.
• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.
图7-50. (51h) OT_WARN_LIMIT Register Map
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
OTW_EXP
OTW_MAN
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
OTW_MAN
LEGEND: R/W = Read/Write; R = Read only
表7-61. Register Field Descriptions
Bit
Field
Access
RW
Reset
00000b
NVM
Description
Linear format two’s complement exponent
Linear format two’s complement mantissa. Refer to the following text.
15:11
10:0
OTW_ EXP
OTW_ MAN
RW
Attempts to write (51h) OT_WARN_LIMIT to any value outside those specified as valid are considered invalid or
unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate status bits and notifying
the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
Command Resolution and NVM Store or Restore Behavior
The (51h) OT_WARN_LIMIT command is implemented using the TPSM8D6B24 internal telemetry system. As a
result, the value of this command can be programmed with very high resolution using the linear format. However,
the TPSM8D6B24 provides only limited NVM-backed options for this command. Following a power-cycle or NVM
Store or Restore operation, the value is restored to the nearest NVM supported value. The NVM supports values
from 0°C to 160°C in 1°C steps. Programming OT_WARN_LIMIT to a value of 255°C disables the
OT_WARN_LIMIT function.
OT_WARN_LIMIT is used to provide hysteresis to OT_FAULT_LIMIT faults. If OT_WARN_LIMIT is programmed
greater than OT_FAULT_LIMIT, including disabling OT_WARN_LIMIT with a value of 255°C, a default hysteresis
of 20°C is used instead.
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7.6.45 (55h) VIN_OV_FAULT_LIMIT
CMD Address
Write Transaction:
Read Transaction:
Format:
55h
Write Word
Read Word
SLINEAR11 per CAPABILITY
Phased:
No
NVM Backup:
Updates:
EEPROM
On-the-fly
The (55h) VIN_OV_FAULT_LIMIT command sets the PVIN voltage, in volts, when a VIN_OV_FAULT is
declared. The response to a detected VIN_OV_FAULT is determined by the settings of (56h)
VIN_OV_FAULT_RESPONSE. (55h) VIN_OV_FAULT_LIMIT is typically used to stop switching in the event of
excessive input voltage, which can result in over-stress damage to the power FETs due to ringing on the SW
node.
图7-51. (55h) VIN_OV_FAULT_LIMIT Register Map
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
VINOVF_EXP
VINOVF_MAN
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
VINOVF_MAN
LEGEND: R/W = Read/Write; R = Read only
表7-62. Register Field Descriptions
Bit
Field
Access
Reset
Description
VINOVF_
EXP
15:11
RW
11110b
Linear format two’s complement exponent
Linear format two’s complement mantissa
VINOVF_
MAN
10:0
RW
NVM
Attempts to write (55h) VIN_OV_FAULT_LIMIT beyond the supported range are considered invalid or
unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate status bits and notifying
the host according to the PMBus 1.3.1 Part II specification section 10.9.3. (55h) VIN_OV_FAULT_LIMIT supports
values from 4 V to 20 V in 0.25-V steps. Following a power cycle or STORE/RESTORE, (55h)
VIN_OV_FAULT_LIMIT is restored to the nearest supported value.
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7.6.46 (56h) VIN_OV_FAULT_RESPONSE
CMD Address
Write Transaction:
Read Transaction:
Format:
56h
Write Byte
Read Byte
Unsigned Binary (1 byte)
No
Phased:
NVM Backup:
Updates:
EEPROM
On-the-fly
The VIN_OV_FAULT_RESPONSE command instructs the device on what action to take in response to a PVIN
overvoltage fault. Upon triggering the PVIN overvoltage fault, the converter responds per the following data byte,
and the following actions are taken:
• Set the NONE OF THE ABOVE bit in the STATUS_BYTE register.
• Set the INPUT bit in the upper byte of the STATUS_WORD register.
• Set the VIN_OV bit in the STATUS_INPUT register.
• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.
图7-52. (56h) VIN_OV_FAULT_RESPONSE Register Map
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
VINOVF_RESP
VINOVF_RETRY
VIN_OVF_DLY
LEGEND: R/W = Read/Write; R = Read only
表7-63. Register Field Descriptions
Bit
Field
Access
Reset
Description
PVIN overvoltage fault response
00b: Ignore. Continue operating without interruption.
01b: Delayed shutdown continue operating for a number of switching cycles
defined by VIN_OVF_DLY, then if fault persists, shut down and restart according to
VIN_OV_RETRY.
VIN_OVF_
RESP
7:6
RW
NVM
10b: Immediate shutdown. Shut down and restart according to VIN_OV_RETRY.
11b: Invalid or not supported
PVIN overvoltage retry
0d: Do not attempt to restart (latch off).
1d - 6d: After shutting down, wait one HICCUP period, and attempt to restart up to
one to six times. After one to six failed restart attempts, do not attempt to restart
(latch off). Restart attempts that occur while PVIN voltage is above
VIN_OV_FAULT_LIMIT is not observable but is counted.
7d: After shutting down, wait one HICCUP period, and attempt to restart
indefinitely, until commanded OFF, or a successful start-up occurs.
VIN_OVF_
RETRY
5:3
2:0
RW
RW
NVM
NVM
PVIN overvoltage delay time for respond after delay and HICCUP
0d: Shutdown delay of one PWM_CLK, HICCUP equal to TON_RISE
1d: Shutdown delay of one PWM_CLK, HICCUP equal to TON_RISE
2d - 4d: Shutdown delay of three PWM_CLK, HICCUP equal to two to four times
TON_RISE
VIN_OVF_
DLY
5d - 7d: Shutdown delay of seven PWM_CLK, HICCUP equal to five to seven times
TON_RISE
If (56h) VIN_OV_FAULT_RESPONSE is configured to ignore a VIN_OV_FAULT and a VIN_OV_FAULT is
present at the time of enabling the device, the device does not start up. To ensure the part ignores any potential
VIN_OV_FAULT at start-up, set the (55h) VIN_OV_FAULT_LIMIT greater than the maximum possible input
voltage applied during start-up.
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Attempts to write (56h) VIN_OV_FAULT_RESPONSE to any value outside those specified as valid are
considered invalid or unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate
status bits and notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
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7.6.47 (58h) VIN_UV_WARN_LIMIT
CMD Address
Write Transaction:
Read Transaction:
Format:
58h
Write Word
Read Word
SLINEAR11 per CAPABILITY
Yes
Phased:
NVM Backup:
Updates:
EEPROM
On-the-fly
The (58h) VIN_UV_WARN_LIMIT command sets the value of the PVIN pin voltage, in volts, that causes the
input voltage detector to indicate an input undervoltage warning.
The (58h) VIN_UV_WARN_LIMIT is a phase command, each phase within a stack independently detects and
reports input undervoltage warnings.
In response to an input undervoltage warning condition, the TPSM8D6B24 takes the following action:
• Set the NONE OF THE ABOVE bit in the STATUS_BYTE.
• Set the INPUT bit in the STATUS_WORD.
• Set the VIN_UVW bit in the STATUS_INPUT register.
• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.
图7-53. (58h) VIN_UV_WARN_LIMIT Register Map
15
14
13
12
11
10
9
RW
8
RW
RW
RW
RW
RW
RW
RW
VINUVW_EXP
VINUVW_MAN
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
VINUVW_MAN
LEGEND: R/W = Read/Write; R = Read only
表7-64. Register Field Descriptions
Bit
Field
Access
Reset
Description
VINUVW_
EXP
15:11
RW
11110b
Linear format two’s complement exponent
VINUVW_
MAN
Linear format two’s complement mantissa
Supported values 2.5 V to 15.5 V
10:0
RW
NVM
Attempts to write (58h) VIN_UV_WARN_LIMIT to any value outside those specified as valid are considered
invalid or unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate status bits and
notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
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7.6.48 (60h) TON_DELAY
CMD Address
Write Transaction:
Read Transaction:
Format:
60h
Write Word
Read Word
SLINEAR11 per CAPABILITY
Phased:
No
NVM Backup:
Updates:
EEPROM
On-the-fly
The TON_DELAY command sets the time, in milliseconds, from when a start condition is received (as
programmed by the ON_OFF_CONFIG command) until the output voltage starts to rise.
图7-54. (60h) TON_DELAY Register Map
15
14
13
12
11
10
9
RW
8
RW
RW
RW
RW
RW
RW
RW
TONDLY_EXP
TONDLY_MAN
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
TONDLY_MAN
LEGEND: R/W = Read/Write; R = Read only
表7-65. Register Field Descriptions
Bit
Field
Access
Reset
Description
TONDLY_
EXP
15:11
RW
11111b
Linear format two’s complement exponent.
Linear format two’s complement mantissa.
A minimum turn-on delay of approximately 100 μs is observed even when
TON_DELAY, during which, the device initializes itself at every power-on.
TONDLY_
MAN
10:0
RW
NVM
Attempts to write (60h) TON_DELAY beyond the supported range are considered invalid or unsupported data
and cause the TPSM8D6B24 to respond by flagging the appropriate status bits and notifying the host according
to the PMBus 1.3.1 Part II specification section 10.9.3. TON_DELAY supports values from 0 ms to 127.5 ms in
0.5-ms steps. Following a power cycle or STORE/RESTORE, TON_DELAY is restored to the nearest supported
value.
Refer to the Start-Up and Shutdown behavior section for handling of corner cases with respect to interrupted
TON_DELAY, TON_RISE, TOFF_FALL, and TOFF_DELAY times.
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7.6.49 (61h) TON_RISE
CMD Address
Write Transaction:
Read Transaction:
Format:
61h
Write Word
Read Word
SLINEAR11 per CAPABILITY
No
Phased:
NVM Backup:
Updates:
EEPROM or Pin Detection
On-the-fly
The TON_RISE command sets the time, in milliseconds, from when the output starts to rise until the voltage has
entered the regulation band, which effectively sets the slew rate of the reference DAC during the soft-start
period. Note that the rise time is equal to TON_RISE regardless of the value of the target output voltage or
VOUT_SCALE_LOOP.
Due to hardware limitations in the resolution of the reference DAC slew-rate control, longer TON_RISE times
with higher VOUT_COMMAND voltages can result in some quantization error in the programmed TON_RISE
times with several TON_RISE times producing the same VOUT slope and TON_RISE time even with different
TON_RISE settings or different TON_RISE times for the same TON_RISE setting and different
VOUT_COMMAND voltages.
图7-55. (61h) TON_RISE Register Map
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
TONR_EXP
TONR_MAN
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
TONR_MAN
LEGEND: R/W = Read/Write; R = Read only
表7-66. Register Field Descriptions
Bit
Field
Access
Reset
Description
15:11
TONR_ EXP
RW
11110b
Linear format two’s complement exponent
Linear format two’s complement mantissa
TONR_
MAN
10:0
RW
NVM
Attempts to write (61h) TON_RISE beyond the supported range are considered invalid or unsupported data and
cause the TPSM8D6B24 to respond by flagging the appropriate status bits and notifying the host according to
the PMBus 1.3.1 Part II specification section 10.9.3. TON_RISE supports the range from 0 ms to 31.75 ms in
0.25-ms steps. Values less than 0.5 ms are supported as 0.5 ms.
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7.6.50 (62h) TON_MAX_FAULT_LIMIT
CMD Address
Write Transaction:
Read Transaction:
Format:
62h
Write Word
Read Word
SLINEAR11 per CAPABILITY
Phased:
No
NVM Backup:
Updates:
EEPROM
On-the-fly
The TON_MAX_FAULT_LIMIT command sets an upper limit, in milliseconds, on how long the unit can attempt to
power up the output without reaching the target voltage.
The TON_MAX time is defined as the maximum allowable amount of time from the end of TON_DELAY, until the
output voltage reaches 85% of the programmed output voltage, as sensed by the READ_VOUT telemetry at
VOSNS –GOSNS.
The TPSM8D6B24 undervoltage fault limit is enabled at the end of TON_RISE. As a consequence, unless
VOUT_UV_FAULT_RESPONSE is set to ignore, in the case of a “real” TON_MAX fault (for example, output
voltage did not rise quickly enough), UV faults and the associated response always precede TON_MAX.
The converter response to a TON_MAX fault event is described in TON_MAX_FAULT_RESPONSE.
图7-56. (62h) TON_MAX_FAULT_LIMIT Register Map
15
14
13
12
11
10
9
RW
8
RW
RW
RW
RW
RW
RW
RW
TONMAXF_EXP
TONMAXF_MAN
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
TONMAXF_MAN
LEGEND: R/W = Read/Write; R = Read only
表7-67. Register Field Descriptions
Bit
Field
Access
Reset
Description
TONMAXF_
EXP
15:11
RW
11111b
Linear format two’s complement exponent
Linear format two’s complement mantissa
TONMAXF_
MAN
10:0
RW
NVM
Attempts to write (62h) TON_MAX_FAULT_LIMIT are considered an invalid or unsupported command and cause
the TPSM8D6B24 to respond by flagging the appropriate status bits and notifying the host according to the
PMBus 1.3.1 Part II specification section 10.9.3. TON_MAX_FAULT_LIMIT supports values from 0 ms to 127 ms
in 0.5-ms steps.
*Note: programming TON_MAX_FAULT to 0 ms disables the TON_MAX functionality.
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7.6.51 (63h) TON_MAX_FAULT_RESPONSE
CMD Address
Write Transaction:
Read Transaction:
Format:
63h
Write Byte
Read Byte
Unsigned Binary (1 byte)
No
Phased:
NVM Backup:
Updates:
EEPROM
On-the-fly
The TON_MAX_FAULT_RESPONSE command instructs the device on what action to take in response to
TON_MAX fault. Upon triggering the input TON_MAX fault, the converter responds per the following byte and
the following actions are taken:
• Set the NONE OF THE ABOVE bit in the STATUS_BYTE.
• Set the VOUT bit in the STATUS_WORD.
• Set the TON_MAX bit in STATUS_VOUT.
• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.
图7-57. (63h) TON_MAX_FAULT_RESPONSE Register Map
7
6
5
4
3
2
1
RW
0
RW
RW
RW
RW
RW
RW
RW
TONMAX_RESP
TONMAX_RETRY
TONMAX_DELAY
LEGEND: R/W = Read/Write; R = Read only
表7-68. Register Field Descriptions
Bit
Field
Access
Reset
Description
TON_ MAX fault response
00b: Ignore. Continue operating without interruption.
TONMAX_
RESP
01b: Continue operating for the delay time specified by TONMAX_DELAY. If the
fault is still present, shut down and restart according to TONMAX_RETRY.
10b: Shut down immediately and restart according to TONMAX_RETRY. Other:
Invalid or unsupported
7:6
RW
NVM
TON_MAX fault retry
0d: Do not attempt to restart (latch off).
TONMAX_
RETRY
1d - 6d: After shutting down, wait one HICCUP period, and attempt to restart up to
one to six times.
7d: After shutting down, wait one HICCUP period, and attempt to restart
indefinitely, until commanded OFF, or a successful start-up occurs.
5:3
2:0
RW
RW
NVM
NVM
TON_MAX delay time for respond after delay and HICCUP
0d: Shutdown delay of 1 ms, HICCUP equal to TON_RISE
1d - 7d: Shutdown delay of 1 to 7 ms. HICCUP equal to two to seven times
TON_RISE.
TONMAX_
DELAY
Attempts to write (63h) TON_MAX_FAULT_RESPONSE to any value outside those specified as valid are
considered invalid or unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate
status bits and notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
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7.6.52 (64h) TOFF_DELAY
CMD Address
Write Transaction:
Read Transaction:
Format:
64h
Write Word
Read Word
SLINEAR11 per CAPABILITY
Phased:
No
NVM Backup:
Updates:
EEPROM
On-the-fly
The TOFF_DELAY command sets the time, in milliseconds, from when a stop condition is received (as
programmed by the ON_OFF_CONFIG command) until the unit stops transferring energy to the output.
图7-58. (64h) TOFF_DELAY Register Map
15
14
13
12
11
10
9
RW
8
RW
RW
RW
RW
RW
RW
RW
TOFFDLY_EXP
TOFFDLY_MAN
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
TOFFDLY_MAN
LEGEND: R/W = Read/Write; R = Read only
表7-69. Register Field Descriptions
Bit
Field
Access
Reset
Description
TOFFDLY_
EXP
15:11
RW
11111b
Linear format two’s complement exponent
Linear format two’s complement mantissa
TOFFDLY_
MAN
10:0
RW
NVM
Attempts to write (64h) TOFF_DELAY beyond the supported range are considered invalid or unsupported data
and cause the TPSM8D6B24 to respond by flagging the appropriate status bits and notifying the host according
to the PMBus 1.3.1 Part II specification section 10.9.3. TOFF_DELAY supports values from 0 ms to 127.5 ms in
0.5-ms steps. An internal delay of up to 50 µs is added to TOFF_DELAY, even if TOFF_DELAY is equal to 0 ms.
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7.6.53 (65h) TOFF_FALL
CMD Address
Write Transaction:
Read Transaction:
Format:
65h
Write Word
Read Word
SLINEAR11 per CAPABILITY
Phased:
No
NVM Backup:
Updates:
EEPROM
On-the-fly
The TOFF_FALL command sets the time, in milliseconds, from the end of the turn-off delay time until the voltage
is commanded to 0. This command can only be used with a device whose output can sink enough current to
cause the output voltage to decrease at a controlled rate, which effectively sets the slew rate of the reference
DAC during the soft-off period. The fall time is equal to TOFF_FALL regardless of the value of the target output
voltage or VOUT_SCALE_LOOP for the purposes of slew rate selection based on the target output voltage.
图7-59. (65h) TOFF_FALL Register Map
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
TOFFF_EXP
TOFFF_MAN
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
TOFFF_MAN
LEGEND: R/W = Read/Write; R = Read only
表7-70. Register Field Descriptions
Bit
Field
Access
Reset
Description
TOFFF_
EXP
15:11
RW
11110b
Linear format two’s complement exponent. Exponent = -2, LSB = 0.25 ms
Linear format two’s complement mantissa
TOFFF_
MAN
10:0
RW
NVM
Attempts to write (65h) TOFF_FALL beyond the supported range are considered invalid or unsupported data and
cause the TPSM8D6B24 to respond by flagging the appropriate status bits and notifying the host according to
the PMBus 1.3.1 Part II specification section 10.9.3. (65h) TOFF_FALL supports values from 0.5 ms to 31.75 ms
in 0.25-ms steps. Values less than 0.5 ms are implemented as 0.5 ms.
Due to hardware limitations in the resolution of the reference DAC slew-rate control, longer TOFF_FALL times
with higher (21h) VOUT_COMMAND voltages can result in some quantization error in the programmed
TOFF_FALL times with several TOFF_FALL times producing the same VOUT slope and TOFF_FALL time even
with different TOFF_FALL settings, or different TOFF_FALL times for the same TOFF_FALL setting and different
(21h) VOUT_COMMAND voltages.
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7.6.54 (78h) STATUS_BYTE
CMD Address
Write Transaction:
Read Transaction:
Format:
78h
Write Byte
Read Byte
Unsigned Binary (1 byte)
Phased:
Yes
NVM Back-up:
Updates:
No
On-the-fly
The STATUS_BYTE command returns one byte of information with a summary of the most critical faults, such as
overvoltage, overcurrent, overtemperature, and so forth. The supported STATUS_BYTE message content is
described in the following table. STATUS_BYTE is equal the low byte of STATUS_WORD. The conditions in
STATUS_BYTE are summary information only. They are asserted to inform the host as to which other STATUS
registers must be checked in the event of a fault. Setting and clearing of these bits must be done in the individual
status registers. For example, clearing VOUT_OVF in STATUS_VOUT also clears VOUT_OV in STATUS_BYTE.
图7-60. (78h) STATUS_BYTE Register Map
7
6
5
4
3
2
1
0
RW
R
R
R
R
R
R
R
NONE OF THE
ABOVE
BUSY
OFF
VOUT_OV
IOUT_OC
VIN_UV
TEMP
CML
LEGEND: R/W = Read/Write; R = Read only
表7-71. Register Field Descriptions
Bit
Field
Access
Reset
Description
0b: A fault was not declared because the device was busy and unable to respond.
1b. A fault was declared because the device was busy and unable to respond.
7
BUSY
RW
0b
LIVE (unlatched) status bit
0b. The unit is enabled and converting power.
1b: The unit is not converting power for any reason including simply not being
enabled.
6
OFF
R
0b
0b: An output overvoltage fault has not occurred.
1b: An output overvoltage fault has occurred.
5
4
3
VOUT_ OV
IOUT_ OC
VIN_ UV
R
R
R
0b
0b
0b
0b: An output overcurrent fault has not occurred.
1b: An output overcurrent fault has occurred.
0b: An input undervoltage fault has not occurred.
1b: An input undervoltage fault has occurred.
0b: A temperature fault or warning has not occurred.
1b: A temperature fault or warning has occurred, the host must check
STATUS_TEMPERATURE for more information.
2
1
0
TEMP
CML
R
R
R
0b
0b
0b
0b: A communication, memory, logic fault has not occurred.
1b: A communication, memory, or logic fault has occurred, the host must check
STATUS_ CML for more information.
NONE OF
THE
ABOVE
0b: A fault other than those listed above has not occurred.
1b: A fault other than those listed above has occurred. The host must check the
STATUS_ WORD for more information.
Writing 80h to STATUS_BYTE clears the BUSY bit, if set.
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7.6.55 (79h) STATUS_WORD
CMD Address
Write Transaction:
Read Transaction:
Format:
79h
Write Word
Read Word
Unsigned Binary (2 bytes)
Phased:
Yes
NVM Backup:
Updates:
No
On-the-fly
The STATUS_WORD command returns two bytes of information with a summary of the most critical faults, such
as overvoltage, overcurrent, overtemperature, and so forth. The low byte of the STATUS_WORD is the same
register as the STATUS_BYTE. The supported STATUS_WORD message content is described in the following
table. The conditions in the STATUS_BYTE are summary information only.
图7-61. (79h) STATUS_WORD Register Map
15
R
14
R
13
12
11
10
9
R
8
R
0
R
R
R
R
VOUT
IOUT
INPUT
MFR
PGOOD
0
OTHER
7
6
5
4
3
2
1
0
RW
R
R
R
R
R
R
R
STATUS_BYTE
LEGEND: R/W = Read/Write; R = Read only
表7-72. Register Field Descriptions
Bit
Field
Access
Reset
Description
0b: An output voltage related fault has not occurred.
15
VOUT
R
0b
1b: An output voltage fault has occurred. The host must check STATUS_ VOUT for
more information.
0b: An output current related fault has not occurred.
1b: An output current fault has occurred. The host must check STATUS_ IOUT for
more information.
14
13
12
IOUT
INPUT
MFR
R
R
R
0b
0b
0b
0b: An input related fault has not occurred.
1b: An input fault has occurred. The host must check STATUS_ INPUT for more
information.
0b: A manufacturer-defined fault has not occurred.
1b: A manufacturer-defined fault has occurred. The host must check STATUS_
MFR_ SPECIFIC for more information.
LIVE (unlatched) status bit. Always follows the value of the PGOOD/RESET_B pin
is asserted.
0b: The output voltage is within the regulation window. The PGOOD pin is de-
asserted.
11
PGOOD
R
0b
1b: The output voltage is not within the regulation window. The PGOOD pin is
asserted.
Not
Supported
10
9
R
R
0b
0b
Not supported and always set to 0b.
0b: An OTHER fault has not occurred.
1b: An OTHER fault has occurred, the host must check STATUS_ OTHER for more
information.
OTHER
Not
Supported
8
R
0b
Not supported and always set to 0b.
STATUS_
BYTE
7:0
RW
00h
Always equal to the STATUS_ BYTE value.
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All bits that can trigger SMBALERT have a corresponding bit in SMBALERT_MASK.
Writing 0080h to STATUS_WORD clears the BUSY bit, if set. Writing 0180h to STATUS_WORD clears both the
BUSY bit and UNKNOWN bit, if set.
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7.6.56 (7Ah) STATUS_VOUT
CMD Address
Write Transaction:
Read Transaction:
Format:
7Ah
Write Byte
Read Byte
Unsigned Binary (1 byte)
Phased:
No
NVM Backup:
Updates:
No
On-the-fly
The STATUS_VOUT command returns one data byte with contents as follows. All supported bits can be cleared
either by CLEAR_FAULTS, or individually by writing 1b to the (7Ah) STATUS_VOUT register in their position, per
the PMBus 1.3.1 Part II specification section 10.2.4.
图7-62. (7Ah) STATUS_VOUT Register Map
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
R
R
VOUT_MIN_MA
X
VOUT_OVF
VOUT_OVW
VOUT_UVW
VOUT_UVF
TON_MAX
0
0
LEGEND: R/W = Read/Write; R = Read only
表7-73. Register Field Descriptions
Bit
Field
Access
Reset
Description
0b: Latched flag indicating VOUT OV fault has not occurred.
1b: Latched flag indicating a VOUT OV fault has occurred.
Note: the mask bits for VOUT_ OVF masks fixed, tracking, and prebiased OVP.
These can be individually controlled in SMBALERT_ MASK_ EXTENDED.
7
VOUT_ OVF
RW
0b
0b: Latched flag indicating a VOUT OV warn has not occurred.
1b: Latched flag indicating a VOUT OV warn has occurred.
Note: the mask bits for VOUT_ OVF masks fixed and tracking overvoltage
protection.
VOUT_
OVW
6
RW
0b
VOUT_
UVW
0b: Latched flag indicating VOUT UV warn has not occurred.
1b: Latched flag indicating a VOUT UV warn has occurred.
5
4
RW
RW
RW
RW
R
0b
0b
0b: Latched flag indicating VOUT UV fault has not occurred.
1b: Latched flag indicating a VOUT UV fault has occurred.
VOUT_ UVF
VOUT_
MIN_MAX
0b: Latched flag indicating a VOUT_ MIN_MAX has not occurred.
1b: Latched flag indicating a VOUT_ MIN_MAX has occurred.
3
0b
0b: Latched flag indicating a TON_ MAX has not occurred.
1b: Latched flag indicating a TON_ MAX has occurred.
2
TON_ MAX
0b
Not
supported
1:0
00b
Not supported and always set to 00b.
All bits that can trigger SMBALERT have a corresponding bit in SMBALERT_MASK.
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7.6.57 (7Bh) STATUS_IOUT
CMD Address
Write Transaction:
Read Transaction:
Format:
7Bh
Write Byte
Read Byte
Unsigned Binary (1 byte)
Phased:
Yes
NVM Backup:
Updates:
No
On-the-fly
The STATUS_IOUT command returns one data byte with contents as follows. All supported bits can be cleared
either by CLEAR_FAULTS, or individually by writing 1b to the (7Bh) STATUS_IOUT register in their position, per
the PMBus 1.3.1 Part II specification section 10.2.4.
图7-63. (7Bh) STATUS_IOUT Register Map
7
6
R
0
5
4
RW
0
3
R
0
2
R
0
1
R
0
0
R
0
RW
RW
IOUT_OCF
IOUT_OCW
LEGEND: R/W = Read/Write; R = Read only
表7-74. Register Field Descriptions
Bit
Field
Access
Reset
Description
0b: Latched flag indicating IOUT OC fault has not occurred.
1b: Latched flag indicating an IOUT OC fault has occurred.
7
IOUT_ OCF
RW
0b
Not
Supported
6
5
R
RW
RW
R
0b
0b
Not supported and always set to 0b.
0b: Latched flag indicating IOUT OC warn has not occurred.
1b: Latched flag indicating an IOUT OC warn has occurred.
IOUT_ OCW
IOUT_UCF
0b: Latched flag indicating an IOUT UC fault has not occurred.
1b: Latched flag indicating an IOUT UC fault has occurred.
4
0b
Not
Supported
3:0
0000b
Not supported and always set to 0000b.
All bits that can trigger SMBALERT have a corresponding bit in SMBALERT_MASK.
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7.6.58 (7Ch) STATUS_INPUT
CMD Address
Write Transaction:
Read Transaction:
Format:
7Ch
Write Byte
Read Byte
Unsigned Binary (1 byte)
Phased:
Yes
NVM Backup:
Updates:
No
On-the-fly
The STATUS_INPUT command returns one data byte with contents as follows. All supported bits can cleared
either by CLEAR_FAULTS, or individually by writing 1b to the (7Ch) STATUS_INPUT register in their position,
per the PMBus 1.3.1 Part II specification section 10.2.4.
图7-64. (7Ch) STATUS_INPUT Register Map
7
6
R
0
5
4
R
0
3
2
R
0
1
R
0
0
R
0
RW
RW
RW
VIN_OVF
VIN_UVW
LOW_VIN
LEGEND: R/W = Read/Write; R = Read only
表7-75. Register Field Descriptions
Bit
Field
Access
Reset
Description
0b: Latched flag indicating PVIN OV fault has not occurred.
1b: Latched flag indicating PVIN OV fault has occurred.
7
6
5
VIN_OVF
VIN_OVW
VIN_UVW
RW
RW
0b
0b
0b
Not supported and always set to 0b.
0b: Latched flag indicating PVIN UV warn occurred.
1b: Latched flag indicating PVIN UV warn has occurred.
Not
Supported
4
3
R
RW
R
0b
0b
Not supported and always set to 0b.
LIVE (unlatched) status bit. Showing the value of PVIN relative to VIN_ON and
VIN_OFF.
0b: PVIN is ON.
1b: PVIN is OFF.
LOW_ VIN
Not
Supported
2:0
000b
Not supported and always set to 000b.
All bits that can trigger SMBALERT have a corresponding bit in SMBALERT_MASK.
LOW_VIN Versus VIN_UVW
The LOW_VIN bit is an information only (does not assert SMBALERT) flag, which indicates that the device is not
converting power because its PVIN voltage is less than VIN_ON or the VDD5 voltage is less than its UVLO to
enable conversion. LOW_VIN asserts initially at reset but does not assert SMBALERT.
The VIN_UVW bit is a latched status bit, may assert SMBALERT if it is triggered to alert the host of an input
voltage issue. VIN_UVW IS masked until the first time the sensed input voltage exceeds the VIN_ON threshold.
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7.6.59 (7Dh) STATUS_TEMPERATURE
CMD Address
Write Transaction:
Read Transaction:
Format:
7Dh
Write Byte
Read Byte
Unsigned Binary (1 byte)
Phased:
Yes
NVM Backup:
Updates:
No
On-the-fly
The STATUS_TEMPERATURE command returns one data byte with contents as follows. All supported bits can
be cleared either by CLEAR_FAULTS, or individually by writing 1b to the (7Dh) STATUS_TEMPERATURE
register in their position, per the PMBus 1.3.1 Part II specification section 10.2.4.
图7-65. (7Dh) STATUS_TEMPERATURE Register Map
7
6
5
R
0
4
R
0
3
R
0
2
R
0
1
R
0
0
R
0
RW
OTF
RW
OTW
LEGEND: R/W = Read/Write; R = Read only
表7-76. Register Field Descriptions
Bit
Field
Access
Reset
Description
0b: Latched flag indicating an OT fault has not occurred.
1b: Latched flag indicating an OT fault has occurred.
7
OTF
RW
0b
0b: Latched flag indicating an OT warn has not occurred.
1b: Latched flag indicating an OT warn has occurred.
6
OTW
RW
R
0b
0d
Not
supported
5:0
Not supported and always set to 000000b.
All bits that can trigger SMBALERT have a corresponding bit in SMBALERT_MASK.
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7.6.60 (7Eh) STATUS_CML
CMD Address
Write Transaction:
Read Transaction:
Format:
7Eh
Write Byte
Read Byte
Unsigned Binary (1 byte)
Phased:
Yes
NVM Backup:
Updates:
No
On-the-fly
The STATUS_CML command returns one data byte with contents relating to communications, logic, and
memory as follows. All supported bits can be cleared either by CLEAR_FAULTS, or individually by writing 1b to
the (7Eh) STATUS_CML register in their position, per the PMBus 1.3.1 Part II specification section 10.2.4.
图7-66. (7Eh) STATUS_CML Register Map
7
6
5
4
3
2
R
0
1
0
R
0
RW
IVC
RW
IVD
RW
PEC
RW
MEM
RW
RW
PROC_FLT
COMM
LEGEND: R/W = Read/Write; R = Read only
表7-77. Register Field Descriptions
Bit
Field
Access
Reset
Description
0b: Latched flag indicating invalid or unsupported command was not received.
1b: Latched flag indicating an invalid or unsupported command was received.
7
IVC
RW
0b
0b: Latched flag indicating invalid or unsupported data was not received.
1b: Latched flag indicating an invalid or unsupported data was received.
6
5
4
3
2
1
0
IVD
PEC
RW
RW
RW
RW
R
0b
0b
0b
0b
0b
0b
0b
0b: Latched flag indicating no packet error check has failed.
1b: Latched flag indicating a packet error check has failed.
0b: Latched flag indicating no memory error was detected.
1b: Latched flag indicating a memory error was detected.
MEM
0b: Latched flag indicating no logic core error was detected.
1b: Latched flag indicating a logic core error was detected.
PROC_FLT
Not
supported
Not supported and always set to 0b.
0b: Latched flag indicating no communication error detected.
1b: Latched flag indicating communication error detected.
COMM
RW
R
Not
supported
Not supported and always set to 0b.
All bits that can trigger SMBALERT have a corresponding bit in SMBALERT_MASK.
Loop followers report a back-channel communications issue as a CML fault on their phase.
The corresponding bit STATUS_BYTE is an OR’ing of the supported bits in this command. When a fault
condition in this command occurs, the corresponding bit in STATUS_BYTE is updated. Likewise, if this byte is
individually cleared (for example, by a write of 1 to a latched condition), it clears the corresponding bit in
STATUS_BYTE.
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7.6.61 (7Fh) STATUS_OTHER
CMD Address
Write Transaction:
Read Transaction:
Format:
7Fh
Write Byte
Read Byte
Unsigned Binary (1 byte)
Phased:
No
NVM Backup:
Updates:
No
On-the-fly
The STATUS_OTHER command returns one data byte with information not specified in the other STATUS bytes.
图7-67. (7Fh) STATUS_OTHER Register Map
7
6
5
4
3
2
1
0
R
R
R
R
R
R
R
RW
FIRST_
TO_ALERT
0
0
0
0
0
0
0
LEGEND: R/W = Read/Write; R = Read only
表7-78. Register Field Descriptions
Bit
Field
Access
Reset
Description
7:1
Reserved
R
0h
Reserved
0b: Latched flag indicating that this device was not the first to assert SMBALERT,
which can mean either that the SMBALERT signal is not asserted (or has since
been cleared), or that it is asserted, but this device was not the first on the bus to
assert it.
FIRST_ TO_
ALERT
0
RW
0b
1b: Latched flag indicating that this device was the first to assert SMBALERT.
The corresponding bit STATUS_BYTE is an OR’ing of the supported bits in this command. When a fault
condition in this command occurs, the corresponding bit in STATUS_BYTE is updated. Likewise, if this byte is
individually cleared (for example, by a write of 1 to a latched condition), it should clear the corresponding bit in
STATUS_BYTE.
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7.6.62 (80h) STATUS_MFR_SPECIFIC
CMD Address
Write Transaction:
Read Transaction:
Format:
80h
Write Byte
Read Byte
Unsigned Binary (1 byte)
Phased:
Yes
NVM Backup:
Updates:
No
On-the-fly
The STATUS_MFR_SPECIFIC command returns one data byte with contents regard of communications, logic,
and memory as follows. All supported bits can be cleared either by CLEAR_FAULTS, or individually by writing 1b
to the (80h) STATUS_MFR_SPECIFIC register in their position, per the PMBus 1.3.1 Part II specification section
10.2.4.
图7-68. (80h) STATUS_MFR_SPECIFIC Register Map
7
6
R
5
R
0
4
R
0
3
2
1
0
R
0
RW
POR
RW
RW
BCX
RW
SELF
RESET
SYNC
LEGEND: R/W = Read/Write; R = Read only
表7-79. Register Field Descriptions
Bit
Field
Access
Reset
Description
0: No power-on reset fault has been detected.
1: A power-on reset fault has been detected.
This bit is set if: power-on self-check of internal trim values, USER_STORE NVM
check-sum, or pin detection reports an invalid result.
7
POR
RW
0b
LIVE (unlatched) status bit. Showing the status of the power-on self-check.
0b: Power-on self-check is complete. All expected BCX loop followers have
responded.
6
SELF
R
0b
1b: Power-on self-check is in progress. One or more BCX loop followers have not
responded.
Not
supported
5:4
3
R
00b
0b:
0b
Not supported and always set to 00b.
0b: A RESET_ VOUT event has not occurred.
1b: A RESET_ VOUT event has occurred.
RESET
BCX
RW
RW
RW
R
0b: A BCX fault event has not occurred.
1b: A BCX fault event has occurred.
2
0b: No SYNC fault has been detected.
1b: A SYNC fault has been detected.
1
SYNC
0b
Not
supported
0
0b
Not supported and always set to 0b.
Per the PMBus Spec writing a 1 to any bit in a STATUS register clears that bit if it is set. All bits that can trigger
SMBALERT have a corresponding bit in SMBALERT_MASK.
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7.6.63 (88h) READ_VIN
CMD Address
Write Transaction:
Read Transaction:
Format:
88h
N/A
Read Word
SLINEAR11 per CAPABILITY
Phased:
Yes
NVM Backup:
Update Rate:
Supported Range:
No
1 ms
0 V –24 V
The READ_VIN command returns the output current in amperes.
图7-69. (88h) READ_VIN Register Map
15
14
13
12
11
10
9
8
R
R
R
R
R
R
R
R
READ_VIN_EXP
READ_VIN_MAN
7
6
5
4
3
2
1
0
R
R
R
R
R
R
R
R
READ_VIN_MAN
LEGEND: R/W = Read/Write; R = Read only
表7-80. Register Field Descriptions
Bit
Field
Access
Reset
Description
READ_
VIN_ EXP
Input
voltage
15:11
RW
Linear format two’s complement exponent
Linear format two’s complement mantissa
READ_
VIN_ MAN
Input
voltage
10:0
RW
Attempts to write read-only commands cause the CML: invalid command (IVC) fault condition, the TPSM8D6B24
responds as follows:
• Set the CML bit in STATUS_BYTE.
• Set the CML_IVC (bit 7) bit in STATUS_CML.
• Notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
PHASE Behavior
When PHASE = FFh, READ_VIN returns the PVIN voltage of the loop controller device.
When PHASE != FFh, READ_VIN returns the PVIN voltage of the device assigned to the current PHASE.
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7.6.64 (8Bh) READ_VOUT
CMD Address
Write Transaction:
Read Transaction:
Format:
8Bh
N/A
Read Word
ULINEAR16 per VOUT_MODE.
Phased:
Yes
NVM Backup:
Update Rate:
Supported Range
No
1 ms
0 V to 6.0 V
The READ_VOUT command returns the actual, measured output voltage.
图7-70. (8Bh) READ_VOUT Register Map
15
R
14
R
13
12
11
10
9
8
R
R
R
R
R
R
READ_VOUT
READ_VOUT
7
6
5
4
3
2
1
0
R
R
R
R
R
R
R
R
LEGEND: R/W = Read/Write; R = Read only
表7-81. Register Field Descriptions
Bit
Field
Access
Reset
Description
READ_
VOUT
Current
Status
15:0
RW
Output voltage reading, per VOUT_ MODE
READ_VOUT reports the voltage at the VOSNS pin with respect to AGND when a device is configured as a loop
follower (GOSNS = BP1V5). In this configuration, VOUT_SCALE_LOOP is ignored and VOSNS must be
externally scaled to maintain a voltage between 0 V and 0.75 V for proper reporting of the VOSNS voltage.
Attempts to write read-only commands cause the CML: invalid command (IVC) fault condition, the TPSM8D6B24
responds as follows:
• Set the CML bit in STATUS_BYTE.
• Set the CML_IVC (bit 7) bit in STATUS_CML.
• Notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
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7.6.65 (8Ch) READ_IOUT
CMD Address
Write Transaction:
Read Transaction:
Format:
8Ch
N/A
Read Word
SLINEAR11 per CAPABILITY
Phased:
Yes
NVM Backup:
Update Rate:
Supported Range:
No
1 ms
–15 A to 90 A per phase
The READ_IOUT command returns the output current in amperes.
图7-71. (8Ch) READ_IOUT Register Map
15
14
13
12
11
10
9
8
R
R
R
R
R
R
R
R
READ_IOUT_EXP
READ_IOUT_MAN
7
6
5
4
3
2
1
0
R
R
R
R
R
R
R
R
READ_IOUT_MAN
LEGEND: R/W = Read/Write; R = Read only
表7-82. Register Field Descriptions
Bit
Field
Access
Reset
Description
READ_
IOUT_ EXP
Current
Status
15:11
RW
Linear format two’s complement exponent
Linear format two’s complement mantissa
READ_
IOUT_ MAN
Current
Status
10:0
RW
Attempts to write read-only commands cause the CML: invalid command (IVC) fault condition, the TPSM8D6B24
responds as follows:
• Set the CML bit in STATUS_BYTE.
• Set the CML_IVC (bit 7) bit in STATUS_CML.
• Notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
PHASE Behavior
When PHASE = FFh, READ_IOUT returns the total current for the stack of devices supporting a single output.
When PHASE != FFh, READ_IOUT returns the measured current of the device assigned to the current PHASE.
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7.6.66 (8Dh) READ_TEMPERATURE_1
CMD Address
Write Transaction:
Read Transaction:
Format:
8Dh
N/A
Read Word
SLINEAR11 per CAPABILITY
Phased:
Yes
NVM Backup:
Update Rate:
Supported Range:
No
300 μs
–40°C to 175°C
The READ_TEMPERATURE_1 command returns the maximum power stage temperature in degrees Celsius.
图7-72. (8Dh) READ_TEMPERATURE_1 Register Map
15
R
14
R
13
12
11
10
9
8
R
R
R
R
R
R
READ_T1_EXP
READ_T1_MAN
7
6
5
4
3
2
1
0
R
R
R
R
R
R
R
R
READ_T1_MAN
LEGEND: R/W = Read/Write; R = Read only
表7-83. Register Field Descriptions
Bit
Field
Access
Reset
Description
READ_ T1_
EXP
Current
Status
15:11
RW
Linear format two’s complement exponent. LSB = 1°C
Linear format two’s complement mantissa
READ_ T1_
MAN
Current
Status
10:0
RW
Attempts to write read-only commands cause the CML: invalid command (IVC) fault condition, the TPSM8D6B24
responds as follows:
• Set the CML bit in STATUS_BYTE.
• Set the CML_IVC (bit 7) bit in STATUS_CML.
• Notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
PHASE Behavior
When PHASE = FFh, READ_TEMPERATURE_1 returns the temperature of the hottest of device in the stack of
devices supporting a single output.
When PHASE ! = FFh, READ_TEMPERATURE_1 returns the measured temperature of the device assigned to
the current PHASE.
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7.6.67 (98h) PMBUS_REVISION
CMD Address
Write Transaction:
Read Transaction:
Format:
98h
N/A
Read Byte
Unsigned Binary (1 byte)
Phased:
No
Max Transaction Time:
0.25 ms
The PMBUS_REVISION command reads the revision of the PMBus to which the device is compliant.
图7-73. (98h) PMBUS_REVISION Register Map
7
6
5
4
3
2
1
0
R
R
R
R
R
R
R
R
PART_I
PART_II
LEGEND: R/W = Read/Write; R = Read only
表7-84. Register Field Descriptions
Bit
Field
Access
Reset
Description
7:4
R
0011b
0011b: Compliant to PMBus Rev 1.3, Part 1
0011b: Compliant to PMBus Rev 1.3, Part 2
PART_ I
PART_ II
3:0
R
0011b
Attempts to write read-only commands cause the CML: invalid command (IVC) fault condition, the TPSM8D6B24
responds as follows:
• Set the CML bit in STATUS_BYTE.
• Set the CML_IVC (bit 7) bit in STATUS_CML.
• Notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
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7.6.68 (99h) MFR_ID
CMD Address
Write Transaction:
Read Transaction:
Format:
99h
Write Block
Read Block
Unsigned Binary (3 bytes)
No
Phased:
NVM Backup:
EEPROM
The MFR_ID command loads the unit with 3 bytes that contains the manufacturer’s ID, which is typically done
once at the time of manufacture.
图7-74. (99h) MFR_ID Register Map
23
22
21
20
19
18
17
16
RW
RW
RW
RW
RW
RW
RW
RW
MFR_ID
MFR_ID
MFR_ID
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
LEGEND: R/W = Read/Write; R = Read only
表7-85. Register Field Descriptions
Bit
Field
Access
Reset
Description
23:0
MFR_ ID
RW
NVM
3 bytes of arbitrarily writable user-store NVM for manufacturer ID information.
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7.6.69 (9Ah) MFR_MODEL
CMD Address
Write Transaction:
Read Transaction:
Format:
9Ah
Write Block
Read Block
Unsigned Binary (3 bytes)
No
Phased:
NVM Backup:
EEPROM
The MFR_MODEL command loads the unit with 3 bytes that contains the manufacturer’s ID, which is typically
done once at the time of manufacture.
图7-75. (9Ah) MFR_MODEL Register Map
23
22
21
20
19
18
17
16
RW
RW
RW
RW
RW
RW
RW
RW
MFR_MODEL
MFR_MODEL
MFR_MODEL
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
LEGEND: R/W = Read/Write; R = Read only
表7-86. Register Field Descriptions
Bit
Field
Access
Reset
Description
MFR_
MODEL
23:0
RW
NVM
3 bytes of arbitrarily writable user-store NVM for manufacturer model information
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7.6.70 (9Bh) MFR_REVISION
CMD Address
Write Transaction:
Read Transaction:
Format:
9Bh
Write Block
Read Block
Unsigned Binary (3 bytes)
No
Phased:
NVM Backup:
EEPROM
The MFR_REVISION command loads the unit with 3 bytes that contains the power supply manufacturer’s
revision number, which is typically done once at the time of manufacture.
图7-76. (9Bh) MFR_REVISION Register Map
23
22
21
20
19
18
17
16
RW
RW
RW
RW
RW
RW
RW
RW
MFR_REV
MFR_REV
MFR_REV
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
LEGEND: R/W = Read/Write; R = Read only
表7-87. Register Field Descriptions
Bit
Field
Access
Reset
Description
23:0
MFR_ REV
RW
NVM
3 bytes of arbitrarily writable user-store NVM for manufacturer revision information
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7.6.71 (9Eh) MFR_SERIAL
CMD Address
Write Transaction:
Read Transaction:
Format:
9Eh
Write Block
Read Block
Unsigned Binary (3 bytes)
No
Phased:
NVM Backup:
EEPROM
The MFR_SERIAL command loads the unit with 3 bytes that contains the power supply manufacturer’s serial
number, which is typically done once at the time of manufacture.
图7-77. (9Eh) MFR_SERIAL Register Map
23
22
21
20
19
18
17
16
RW
RW
RW
RW
RW
RW
RW
RW
MFR_SERIAL
MFR_SERIAL
MFR_SERIAL
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
LEGEND: R/W = Read/Write; R = Read only
表7-88. Register Field Descriptions
Bit
Field
Access
Reset
Description
MFR_
SERIAL
23:00
RW
NVM
Arbitrary 3-byte Serial Number assigned by manufacturer
Because the value for MFR_SERIAL is included in the NVM memory store used to calculate the
NVM_CHECKSUM, assigning a unique MFR_SERIAL value also results in a unique NVM_CHECKSUM value.
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7.6.72 (ADh) IC_DEVICE_ID
CMD Address
Write Transaction:
Read Transaction:
Format:
ADh
N/A
Read Block
Unsigned Binary (6 bytes)
No
Phased:
The IC_DEVICE_ID command is used to either set or read the type or part number of an IC embedded within a
PMBus that is used for the PMBus interface.
图7-78. (ADh) IC_DEVICE_ID Register Map
47
R
46
R
45
44
43
42
41
R
40
R
R
R
R
R
IC_DEVICE_ID[47:40]
39
R
38
R
37
R
36
R
35
R
34
R
33
R
32
R
IC_DEVICE_ID[39:32]
31
R
30
R
29
R
28
R
27
R
26
R
25
R
24
R
IC_DEVICE_ID[31:24]
23
R
22
R
21
R
20
R
19
R
18
R
17
R
16
R
IC_DEVICE_ID[23:16]
15
R
14
R
13
R
12
R
11
R
10
R
9
8
R
R
IC_DEVICE_ID[15:8]
7
6
5
4
3
2
1
0
R
R
R
R
R
R
R
R
IC_DEVICE_ID[7:0]
LEGEND: R/W = Read/Write; R = Read only
表7-89. Register Field Descriptions
Bit
Field
Access
Reset
Description
IC_
DEVICE_ ID
47:0
R
See text. See the table below.
表7-90. IC_DEVICE_ID Values
Byte Number (Bit
Indices)
Byte 0 (7:0)
54h
Byte 1 (15:8)
Byte 2 (23:16)
Byte 3 (31:24)
Byte 4 (39:32)
Byte 5 (47:40)
TPSM8D6B24
49h
54h
6Bh
24h
41h
Attempts to write read-only commands cause the CML: invalid command (IVC) fault condition, the TPSM8D6B24
responds as follows:
• Set the CML bit in STATUS_BYTE.
• Set the CML_IVC (bit 7) bit in STATUS_CML.
• Notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
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7.6.73 (AEh) IC_DEVICE_REV
CMD Address
Write Transaction:
Read Transaction:
Format:
AEh
N/A
Read Block
Unsigned Binary (2 bytes)
No
Phased:
The IC_DEVICE_REV command is used to either set or read the revision of the IC.
图7-79. (AEh) IC_DEVICE_REV Register Field Descriptions
15
R
14
R
13
12
11
10
9
8
R
R
R
R
R
R
MAJOR_REV
MINOR_REV
7
6
5
4
3
2
1
0
R
R
R
R
R
R
R
R
SUB_MINOR_REV
LEGEND: R/W = Read/Write; R = Read only
Attempts to write read-only commands cause the CML: invalid command (IVC) fault condition, the TPSM8D6B24
responds as follows:
• Set the CML bit in STATUS_BYTE.
• Set the CML_IVC (bit 7) bit in STATUS_CML.
Notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
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7.6.74 (B1h) USER_DATA_01 (COMPENSATION_CONFIG)
CMD Address
Write Transaction:
Read Transaction:
Format:
B1h
Write Block
Read Block
Unsigned Binary (5 bytes)
No
Phased:
NVM Backup:
EEPROM or Pin Detection
Conversion Disable: on-the-fly. Conversion Enable: hardware update blocked. To update hardware
after write while enabled, store to NVM with (15h) STORE_USER_ALL and (16h)
RESTORE_USER_ALL or cycle AVIN below UVLO.
Updates:
Configure the control loop compensation.
图7-80. (B1h) USER_DATA_01 (COMPENSATION_CONFIG) Register Map
39
38
37
36
35
34
33
32
RW
RW
RW
RW
RW
RW
RW
RW
SEL_CZI[1:0]
SEL_CPI[4:0]
SEL_CZI_MUL
31
R
30
29
28
27
26
25
24
RW
RW
RW
RW
RW
RW
RW
SEL_RVI[5:0]
SEL_CZI[3:2]
23
22
21
20
19
18
17
16
RW
0
RW
RW
RW
RW
RW
RW
RW
SEL_CZV[1:0]
SEL_CPV[4:0]
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
SEL_RVV[5:0]
SEL_CZV[3:2]
SEL_GMI[1:0]
7
RW
0
6
RW
0
5
4
3
RW
0
2
RW
0
1
0
RW
RW
RW
RW
SEL_GMV[1:0]
LEGEND: R/W = Read/Write; R = Read only
表7-91. Register Field Descriptions
Bit
Field
Access
Reset
Description
SEL_CZI[3:
0]
Selects the value of current loop integrating capacitor.
CZI = 6.66 pF x CZI_MUL × 2SEL_GMI[1:0] × SEL_CZI[3:0]
25:24,39:38
RW
NVM
SEL_CPI[4:
0]
Selects the value of current loop filter capacitor.
CPI = 3.2 pF × SEL_CPI[4:0]
37:33
32
RW
RW
NVM
NVM
Selects the value of current loop integrating capacitor multiplier.
0b: CZI_MUL = 1
1b: CZI_MUL = 2
SEL_CZI_M
UL
Selects the value of current loop mid-band gain resistor.
RVI = 5 kΩ× SEL_RVI[5:0]
SEL_RVI[5:
0]
31:26
RW
RW
NVM
NVM
SEL_CZV[3:
0]
Selects the value of voltage loop integrating capacitor.
CZV = 125 pF × 2SEL_GMV[1:0] × SEL_CZV[3:0]
9:8, 23:22
SEL_CPV[4:
0]
Selects the value of voltage loop filter capacitor.
CPV = 6.25 pF × SEL_CPV[4:0]
21:17
16
RW
RW
RW
NVM
NVM
NVM
Reserved
Reserved, set to 0b.
Selects the value of voltage loop mid-band gain resistor.
RVV = 5 kΩ× SEL_RVV[5:0]
SEL_RVV[5:
0]
15:10
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表7-91. Register Field Descriptions (continued)
Bit
Field
Access
Reset
Description
7:6
Reserved
RW
NVM
Reserved, set to 00b.
SEL_GMV[1
:0]
Selects the value of voltage error transconductance.
GMV = 25 µS × 2SEL_GMV[1:0]
5:4
3:2
1:0
RW
RW
RW
NVM
NVM
NVM
Reserved
Reserved, set to 00b.
SEL_GMI[1:
0]
Selects the value of current error transconductance.
GMI = 25 µS × 2SEL_GMI[1:0]
(B1h) USER_DATA_01 (COMPENSATION_CONFIG) can be written to while output conversion is enabled, but
updating those values to hardware are blocked. To update the value used by the control loop:
• Disable conversion, then write to (B1h) USER_DATA_01 (COMPENSATION_CONFIG).
• Write to (B1h) USER_DATA_01 (COMPENSATION_CONFIG) while conversion is enabled, store PMBus
values to NVM using (15h) STORE_USER_ALL, clear the (B1h) USER_DATA_01
(COMPENSATION_CONFIG) bit in (EEh) MFR_SPECIFIC_30 (PIN_DETECT_OVERRIDE), then cycle AVIN
or use the (16h) RESTORE_USER_ALL command.
Due to the complexity of translating the 5-byte HEX value of (B1h) USER_DATA_01
(COMPENSATION_CONFIG) into analog compensation values, TI recommends using the tools available on the
TPSM8D6B24 product folder such as the TPS546x24A Compensation and Pin-Strap Resistor Calculator design
tool.
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7.6.75 (B5h) USER_DATA_05 (POWER_STAGE_CONFIG)
CMD Address
Write Transaction:
Read Transaction:
Format:
B5h
Write Block (per PMBus Spec, even though 1 data byte)
Read Block (per PMBus Spec, even though 1 data byte)
Unsigned Binary (1 byte)
No
Phased:
NVM Backup:
Updates:
EEPROM
On-the-fly
Max Transaction Time:
Max Action Delay:
1.0 ms
1.0 ms (not time critical)
POWER_STAGE_CONFIG allows the user to adjust the VDD5 regulator voltage.
图7-81. (B5h) USER_DATA_05 (POWER_STAGE_CONFIG) Register Map
7
6
5
4
3
2
1
0
RW
RW
RW
RW
R
R
R
R
SEL_VDD5
Reserved
LEGEND: R/W = Read/Write; R = Read only
表7-92. Register Field Descriptions
Bit
7:4
3:0
Field
Access
RW
Reset
Description
3h: VDD5 = 3.9 V (Not Recommended for Production)
4h: VDD5 = 4.1 V
5h: VDD5 = 4.3 V
6h: VDD5 = 4.5 V
7h: VDD5 = 4.7 V
8h: VDD5 = 4.9 V
9h: VDD5 = 5.1 V
Ah: VDD5 = 5.3 V
Other: Invalid
SEL_VDD5
Reserved
NVM
R
0000b
Reserved. Set to 0000b.
Setting 30h is not recommended for production use unless an external VDD5 voltage is provided because the
3.9-V LDO setting can result in a VDD5 voltage less than the VDD5 undervoltage lockout required to enable
conversion and can result in the TPSM8D6B24 device being unable to enable conversion without an external
VDD5 voltage.
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7.6.76 (D0h) MFR_SPECIFIC_00 (TELEMETRY_CONFIG)
CMD Address
Write Transaction:
Read Transaction:
Format:
D0h
Write Block
Read Block
Unsigned Binary (6 bytes)
No
Phased:
NVM Backup:
Updates:
EEPROM
On-The-Fly
Configure the priority and averaging for each channel of the internal telemetry system.
The internal telemetry system shares a single ADC across each measurement. The priority setting allows the
user to adjust the relative rate of measurement of each telemetry value. The ADC first measures each value with
a priority A value. With each pass through all priority A measurements, one priority B measurement is taken.
With each pass through all priority B measurements, one priority C measurement is taken.
For example, if output voltage has priority A and output current has priority B, and temperature has priority C, the
telemetry sequence is VOUT IOUT VOUT TEMPERATURE VOUT IOUT VOUT TEMPERATURE.
图7-82. (D0h) MFR_SPECIFIC_00 (TELEMETRY_CONFIG) Register Map
47
46
45
44
43
42
41
40
RW
RW
RW
RW
RW
RW
RW
RW
Reserved priority
Reserved
Reserved averaging
39
38
37
36
RW
35
34
33
RW
32
RW
RW
RW
RW
RW
RW
Reserved priority
Reserved
Reserved averaging
31
R
30
29
28
RW
27
26
25
RW
24
RW
RW
RW
RW
RW
RD_VI_PRI
Reserved
RD_VI_AVG
23
22
21
20
RW
19
18
17
RW
16
RW
RW
RW
RW
RW
RW
RD_TMP_PRI
Reserved
RD_TMP_AVG
15
14
13
12
RW
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RD_IO_PRI
Reserved
RD_IO_AVG
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
RD_VO_PRI
Reserved
RD_VO_AVG
LEGEND: R/W = Read/Write; R = Read only
表7-93. Register Field Descriptions
Bit
Field
Access
R
Reset
Description
47:40
39:32
Not used
Not used
00h
Reserved. Set values to 00h.
Reserved. Set values to 03h.
RW
NVM
00b: Assign priority A to input voltage telemetry.
01b: Assign priority B to input voltage telemetry.
10b: Assign priority C to input voltage telemetry.
11b: Disable input voltage telemetry.
31:30
RD_VI_PRI
RW
NVM
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表7-93. Register Field Descriptions (continued)
Bit
Field
Access
Reset
Description
0d - 5d: READ_VIN Rolling average of 2N samples
6d - 7d: Invalid
31:24
RD_VI_AVG
RW
NVM
00b: Assign priority A to temperature telemetry.
01b: Assign priority B to temperature telemetry.
10b: Assign priority C to temperature telemetry.
11b: Invalid
RD_TMP_P
RI
23:22
RW
NVM
21:19
18:16
Reserved
RW
RW
NVM
NVM
Reserved. Set to 000b.
RD_TMP_A
VG
0d - 5d: READ_TEMPERATURE_1 Rolling average of 2N samples
6d-7d: Invalid
00b: Assign priority A to output current telemetry.
01b: Assign priority B to output current telemetry.
10b: Assign priority C to output current telemetry.
11b: Disable output current telemetry.
15:14
RD_IO_PRI
RW
NVM
13:11
10:8
Reserved
RW
RW
NVM
NVM
Reserved. Set to 000b.
0d - 5d: READ_IOUT Rolling average of 2N samples
6d - 7d: Invalid
RD_IO_AVG
00b: Assign priority A to output voltage telemetry.
01b: Assign priority B to output voltage telemetry.
10b: Assign priority C to output voltage telemetry.
11b: Disable output voltage telemetry.
7:6
RD_VO_PRI
Reserved
RW
NVM
5:3
2:0
RW
RW
NVM
NVM
Reserved. Set to 000b.
RD_VO_AV
G
0d - 5d: READ_VOUT Rolling average of 2N samples
6d - 7d: Invalid
Disabling any telemetry value forces the associated READ PMBus command to report 0000h.
Because temperature telemetry is used for overtemperature protection, temperature telemetry cannot be
disabled.
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7.6.77 (DAh) MFR_SPECIFIC_10 (READ_ALL)
CMD Address
Write Transaction:
Read Transaction:
Format:
DAh
NA
Read Block
Unsigned Binary (14 bytes)
Phased:
No
No
NVM Backup:
READ_ALL provides for a 14-byte BLOCK read of STATUS_WORD and telemetry values to improve bus
utilization for poling by combining multiple READ functions into a single command, eliminating the need for
multiple address and command code bytes.
图7-83. (DAh) MFR_SPECIFIC_10 (READ_ALL) Register Map
111
R
110
R
109
108
107
106
105
R
104
R
R
R
R
R
Not Supported = 00h
103
R
102
R
101
R
100
R
99
R
98
R
97
R
96
R
Not Supported = 00h
95
R
94
R
93
R
92
R
91
R
90
R
89
R
88
R
Not Supported = 00h
87
R
86
R
85
R
84
R
83
R
82
R
81
R
80
R
Not Supported = 00h
79
R
78
R
77
R
76
R
75
R
74
R
73
R
72
R
READ_VIN (MSB)
71
R
70
R
69
R
68
R
67
R
66
R
65
R
64
R
READ_VIN (LSB)
63
R
62
R
61
R
60
R
59
R
58
R
57
R
56
R
READ_TEMPERATURE1 (MSB)
55
R
54
R
53
R
52
R
51
R
50
R
49
R
48
R
READ_TEMPERATURE1 (LSB)
47
R
46
R
45
R
44
R
43
R
42
R
41
R
40
R
READ_IOUT (MSB)
39
R
38
R
37
R
36
R
35
R
34
R
33
R
32
R
READ_IOUT (LSB)
28 27
31
30
29
26
25
24
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R
R
R
R
R
R
R
R
READ_VOUT (MSB)
23
R
22
R
21
R
20
R
19
R
18
R
17
R
16
R
READ_VOUT (LSB)
15
R
14
R
13
R
12
R
11
R
10
R
9
8
R
R
STATUS_WORD (High Byte)
7
6
5
4
3
2
1
0
R
R
R
R
R
R
R
R
STATUS_BYTE
LEGEND: R/W = Read/Write; R = Read only
表7-94. Register Field Descriptions
Bit
Field
Access
Reset
Description
READ_
DUTY_CYC
LE
111:96
R
0000h
Not supported = 0000h
95:80
79:64
READ_ IIN
READ_ VIN
R
R
0000h
0000h
Not supported = 0000h
READ_VIN (Linear Format)
READ_
TEMPERAT
URE1
63:48
R
0000h
READ_ TEMPERATURE1 (Linear Format)
READ_
IOUT
47:32
31:16
15:0
R
R
R
0000h
0000h
0000h
READ_ IOUT (Linear Format)
READ_VOU
T
READ_ VOUT (ULinear16 Format, Per VOUT_MODE)
STATUS_WORD
STATUS_W
ORD
Attempts to write read-only commands cause the CML: invalid command (IVC) fault condition, the TPSM8D6B24
responds as follows:
• Set the CML bit in STATUS_BYTE.
• Set the CML_IVC (bit 7) bit in STATUS_CML.
Notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
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7.6.78 (DBh) MFR_SPECIFIC_11 (STATUS_ALL)
CMD Address
Write Transaction:
Read Transaction:
Format:
DBh
NA
Read Block
Unsigned Binary (7 bytes)
Phased:
No
No
NVM Backup:
STATUS_ALL provides for a 7-byte block of STATUS command codes, which can reduce bus utilization to read
multiple faults.
图7-84. (DBh) MFR_SPECIFIC_11 (STATUS_ALL) Register Map
55
R
54
R
53
52
51
50
49
R
48
R
R
R
R
R
STATUS_MFR
47
R
46
R
45
R
44
R
43
R
42
R
41
R
40
R
STATUS_OTHER
39
R
38
R
37
R
36
35
R
34
R
33
R
32
R
R
STATUS_CML
31
R
30
R
29
R
28
R
27
R
26
R
25
R
24
R
STATUS_TEMPERATURE
23
R
22
R
21
R
20
R
19
R
18
R
17
R
16
R
STATUS_INPUT
15
R
14
R
13
R
12
R
11
R
10
R
9
8
R
R
STATUS_IOUT
7
6
5
4
3
2
1
0
R
R
R
R
R
R
R
R
STATUS_VOUT
LEGEND: R/W = Read/Write; R = Read only
表7-95. Register Field Descriptions
Bit
Field
Access
Reset
Description
STATUS_
MFR
Current
Status
55:48
R
STATUS_ MFR
STATUS_
OTHER
Current
Status
47:40
39:32
R
R
STATUS_ OTHER
STATUS_ CML
STATUS_
CML
Current
Status
STATUS_
TEMPERAT
URE
Current
Status
31:24
R
STATUS_ TEMPERATURE
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表7-95. Register Field Descriptions (continued)
Bit
Field
Access
Reset
Description
STATUS_
INPUT
Current
Status
23:16
R
STATUS_ INPUT
STATUS_
IOUT
Current
Status
15:8
7:0
R
R
STATUS_ IOUT
STATUS_ VOUT
STATUS_
VOUT
Current
Status
Attempts to write read-only commands cause the CML: invalid command (IVC) fault condition, the TPSM8D6B24
responds as follows:
• Set the CML bit in STATUS_BYTE.
• Set the CML_IVC (bit 7) bit in STATUS_CML.
• Notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
Writes to STATUS_ALL do not clear asserted status bits.
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7.6.79 (DCh) MFR_SPECIFIC_12 (STATUS_PHASE)
CMD Address
Write Transaction:
Read Transaction:
Format:
DCh
Write Word
Read Word
Unsigned Binary (2 bytes)
Phased:
Yes
Updates:
On-the-fly
No
NVM Backup:
When PHASE = FFh or 80h, reads to this command return a data word detailing which phases have
experienced fault conditions. When PHASE != FFh, reads to this command return a data word detailing which
fault or faults the current PHASE has experienced. PHASE number assignment is per PHASE_CONFIG. Bits
corresponding to unused (unassigned or disabled) phase numbers are always equal to 0b.
图7-85. (DCh) MFR_SPECIFIC_12 (STATUS_PHASE)
15
R
14
R
13
R
12
R
11
RW
0
10
RW
0
9
RW
0
8
RW
0
7
RW
0
6
RW
0
5
RW
0
4
RW
0
3
2
1
0
RW
PH3
RW
PH2
RW
PH1
RW
PH0
0
0
0
0
LEGEND: R/W = Read/Write; R = Read only
表7-96. Register Field Descriptions
Bit
Field
Access
Reset
Description
15:4
Reserved
R
0b
Reserved
0b: The TPSM8D6B24 assigned to PHASE = 3d has not experienced a fault.
3
2
1
0
PH3
PH2
PH1
PH0
RW
RW
RW
RW
0b
0b
0b
0b
1b: The TPSM8D6B24 assigned to PHASE = 3d has experienced a fault. Set
PHASE = 3d, and read STATUS_WORD or STATUS_ALL for more information.
0b: The TPSM8D6B24 assigned to PHASE = 2d has not experienced a fault.
1b: The TPSM8D6B24 assigned to PHASE = 2d has experienced a fault. Set
PHASE = 2d, and read STATUS_WORD or STATUS_ALL for more information.
0b: The TPSM8D6B24 assigned to PHASE = 1d has not experienced a fault.
1b: The TPSM8D6B24 assigned to PHASE = 1d has experienced a fault. Set
PHASE = 1d, and read STATUS_WORD or STATUS_ALL for more information.
0b: The TPSM8D6B24 assigned to PHASE = 0d has not experienced a fault.
1b: The TPSM8D6B24 assigned to PHASE = 0d has experienced a fault. Set
PHASE = 0d, and read STATUS_WORD or STATUS_ALL for more information.
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7.6.80 (E3h) MFR_SPECIFIC_19 (PGOOD_CONFIG)
CMD Address
Write Transaction:
Read Transaction:
Format
E3h
Write Word
Read Word
Unsigned Word
Phased:
No
NVM Backup:
Updates:
EEPROM or Pin Detect
Conversion Disable: see below. Conversion Enable: Read-Only
图7-86. (E3h) MFR_SPECIFIC_19 (PGOOD_CONFIG) Register Map
15
R
14
13
12
11
10
9
8
R
R
R
R
R
R
R
PGOOD_OFF_DELAY[3:0]
PGOOD_ON_DELAY[3:0]
7
R
6
R
5
R
4
R
3
2
1
0
RW
RW
RW
RW
pgmOVF
pgmOVW
pgmUVW
pgmUVF
pgmOCW
pgmOCF
pgmINOVW
pgmINOVF
LEGEND: R/W = Read/Write; R = Read only
表7-97. Register Field Descriptions
Bit
Field
Access
Reset
Description
Sets delay from the detection of an unmasked fault or warning event to the
assertion of PGOOD low.
PGOOD_OF
F_DELAY[3:
0]
15:12
RW
NVM
0d: Delay PGOOD high-low 1 PWM CLK
1d - 15d: Delay PGOOD high-low 2N + 1 PWM CLKs
Sets delay from the detection of no unmasked fault or warning events to the
release of PGOOD low.
PGOOD_O
N_DELAY[3:
0]
11:8
RW
NVM
0d: Delay PGOOD low-hight to 1 PWM CLK
1d - 15d: Delay PGOOD low-high 2N + 1 PWM CLKs
0b: Output overvoltage fault can assert PGOOD low.
1b: Output overvoltage fault cannot assert PGOOD low.
7
6
5
4
3
2
1
0
pgmOVF
pgmOVW
pgmUVF
RW
RW
RW
RW
RW
RW
RW
RW
NVM
NVM
NVM
NVM
NVM
NVM
NVM
NVM
0b: Output overvoltage warning can assert PGOOD low.
1b: Output overvoltage warning cannot assert PGOOD low.
0b: Output undervoltage fault can assert PGOOD low.
1b: Output undervoltage fault cannot assert PGOOD low.
0b: Output undervoltage warning can assert PGOOD low.
1b: Output undervoltage warning cannot assert PGOOD low.
pgmUVW
pgmOCW
pgmOCF
0b: Output overcurrent warning can assert PGOOD low.
1b: Output overcurrent warning cannot assert PGOOD low.
0b: Output overcurrent fault can assert PGOOD low.
1b: Output overcurrent fault cannot assert PGOOD low.
0b: Input overvoltage warning can assert PGOOD low.
1b: Input overvoltage warning cannot assert PGOOD low.
pgmINOVW
pgmINOVF
0b: Input overvoltage fault can assert PGOOD low.
1b: Input overvoltage fault cannot assert PGOOD low.
Power good indicates the status of the converter. (E3h) MFR_SPECIFIC_19 (PGOOD_CONFIG) provides
control of the delays asserting and releasing power good. Power good is always low while conversion is
disabled, during (60h) TON_DELAY, (61h) TON_RISE, (65h) TOFF_FALL, and during a fault shutdown or hiccup
delay. PGOOD_OFF_DELAY is bypassed during (65h) TOFF_FALL and during a fault shutdown or hiccup.
Power good is still asserted on an unmasked fault event unless the RESPONSE command of that fault is
configured to continue operating without interruption.
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PGOOD_OFF_DELAY and PGOOD_ON_DELAY are sensed and timed independently from each other. If
PGOOD_ON_DELAY is less than PGOOD_OFF_DELAY and an unmasked fault or warning event lasts less than
PGOOD_OFF_DELAY – PGOOD_ON_DELAY, power good is not asserted low during the fault or warning
events.
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7.6.81 (E4h) MFR_SPECIFIC_20 (SYNC_CONFIG)
CMD Address
Write Transaction:
Read Transaction:
Format:
E4h
Write Byte
Read Byte
Unsigned Binary
No
Phased:
NVM Backup:
Updates:
EEPROM or Pin Detect
On-the-fly
图7-87. (E4h) MFR_SPECIFIC_20 (SYNC_CONFIG) Register Map
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
SYNC_ DIR
SYNC_EDGE
10000b
LEGEND: R/W = Read/Write; R = Read only
表7-98. Register Field Descriptions
Bit
Field
Access
Reset
Description
00b: SYNC disabled
01b: Enable SYNC OUT.
10b: Enable SYNC IN.
11b: Enable Auto Detect SYNC
7:6
SYNC_DIR
RW
NVM
SYNC_EDG
E
0b: Synchronize to falling edge of SYNC.
1b: Synchronize to rising edge of SYNC.
5
RW
RW
NVM
Not
supported
4:0
10000b
Not supported. Set to 10000b.
Attempts to write (E4h) MFR_SPECIFIC_E4 (SYNC_CONFIG) to any value outside those specified as valid are
considered invalid or unsupported data and cause the TPSM8D6B24 to respond by flagging the appropriate
status bits and notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
When SYNC_DIR = 11b - Enable Auto Detect, the TPSM8D6B24 selects SYNC_IN or SYNC_OUT based on the
state of the SYNC pin when the Enable condition, as defined by ON_OFF_CONFIG, is met. If the SYNC_PIN is
> 2 V or switching faster than 75% of FRQUENCY_SWITCH, SYNC_IN is enabled. If the SYNC_PIN is less than
0.8 V and not switching, SYNC_OUT is selected.
Loop follower devices in a multi-phase stack are always configured for SYNC_IN and declare a SYNC_FAULT in
(80h) STATUS_MFR_SPECIFIC if enabled before a SYNC signal is present, or if SYNC is lost before being
disabled. To prevent such false SYNC_FAULTs from occurring, it is recommended that multi-phase stacks
configure select SYNC_OUT in (E4h) MFR_SPECIFIC_20 (SYNC_CONFIG) if not using an external
synchronization signal.
Changing SYNC_DIR from SYNC_IN to SYNC_OUT while enabled and operating at the lower limit of the
SYNC_IN function (70% of nominal switching frequency) results in the switching frequency remaining at the
lower limit of SYNC_IN until the output is disabled and enabled.
Changing SYNC_DIR from SYNC_IN to SYNC_OUT on a multi-phase stack while conversion is enabled but
prevented due to a SYNC_FAULT will result in the internal oscillator operating at 70% of its nominal frequency.
Since this is outside of the compliant SYNC_IN range of the loop follower device, this can result in
unsynchronized operation.
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7.6.82 (ECh) MFR_SPECIFIC_28 (STACK_CONFIG)
CMD Address
Write Transaction:
Read Transaction:
Format:
ECh
Write Word
Read Word
Unsigned Word
Phased:
No
NVM Backup:
Updates:
EEPROM or Pin Detect
Conversion Disable: see below. Conversion Enable: Read-Only
图7-88. (ECh) MFR_SPECIFIC_28 (STACK_CONFIG) Register Map
15
R
14
13
12
11
10
9
8
R
R
R
R
R
R
R
Reserved 0000h
7
6
5
4
3
2
1
0
R
R
R
R
RW
RW
RW
RW
BCX_START
BCX_STOP
LEGEND: R/W = Read/Write; R = Read only
表7-99. Register Field Descriptions
Bit
Field
Access
Reset
Description
Not
supported
15:8
R
0000h
Reserved. Equal to 0000h.
BCX_STAR
T
7:4
3:0
R
0000b
NVM
BCX_Address for Stack Loop Controller. Equal to 0000b.
0000b: Standalone, single-phase
0001b: One loop follower, 2-phase
0010b: Two loop followers, 3-phase
0011b: Three loop followers, 4-phase
Other: Not supported/invalid
BCX_STOP
RW
Attempts to write (ECh) MFR_SPECIFIC_28 (STACK_CONFIG) to any value outside those specified as valid are
considered invalid or unsupported data and cause TPSM8D6B24 to respond by flagging the appropriate status
bits and notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.
(ECh) MFR_SPECIFIC_28 (STACK_CONFIG) controls the operation of the BCX_CLK and BCX_DAT pins. If the
TPSM8D6B24 powers up with (ECh) MFR_SPECIFIC_28 (STACK_CONFIG) equal to 0000h (standalone) the
BCX_CLK and BCX_DAT functionality is disabled. Changing (ECh) MFR_SPECIFIC_28 (STACK_CONFIG) to a
multi-phase configuration does not enable BCX communication until the next power up. To program loop follower
devices connected to a loop controller device that was powered up with (ECh) MFR_SPECIFIC_28
(STACK_CONFIG) = 0000h, program (EEh) MFR_SPECIFIC_30 (PIN_DETECT_OVERRIDE) to default (ECh)
MFR_SPECIFIC_28 (STACK_CONFIG) to NVM by setting bit 12 = 0b, (15h) STORE_USER_ALL and cycle
AVIN power below its UVLO prior to programing other commands in order to enable BCX communication and
allow the loop controller device to relay commands to the loop follower devices.
(ECh) MFR_SPECIFIC_28 (STACK_CONFIG) can be changed from 0001h to 0003h to 0000h – 0003h live
without requiring an AVIN power cycle since the BCX_CLK and BCX_DAT function is enabled at power up.
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7.6.83 (EDh) MFR_SPECIFIC_29 (MISC_OPTIONS)
CMD Address
Write Transaction:
Read Transaction:
Format:
EDh
Write Word
Read Word
Unsigned Binary (2 bytes)
No
Phased:
NVM Backup:
Updates:
EEPROM
On-the-fly
MFR_SPECIFIC_29 is used to configure miscellaneous settings.
图7-89. (EDh) MFR_SPECIFIC_29 (MISC_OPTIONS) Register Map
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
Reserv
ed
PEC
RESET_CNT
RESET_FLT
RESET#
Reserved
Reserved
Reserved
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
Reserv
ed
Reserved
Reserved
Reserved
PULLUP#
FLT_CNT
ADC_RES
LEGEND: R/W = Read/Write; R = Read only
表7-100. Register Field Descriptions
Bit
Field
Access
Reset
Description
0b: PEC Optional. Transactions received without PEC byte are processed.
15
PEC
RW
NVM
1b: PEC is required. Transactions received without the PEC byte are rejected as
invalid PEC.
0b: VOUT_COMMAND is unchanged following a shutdown.
1b: VOUT_COMMAND is changed to VBOOT on a control or OPERATION
shutdown.
RESET_CN
T
14
13
RW
RW
NVM
NVM
0b: VOUT_COMMAND is unchanged following a fault restart.
1b: VOUT_COMMAND is changed to VBOOT on restart from a fault when fault
retry is set to retry after fault.
RESET_FLT
RESET#
Sets the function of the PGD/RESET_B pin.
0b: PGD/RESET_B functions as PGOOD and internal pullup is disabled.
1b: PGD/RESET_B functions as RESET# and internal pullup is set by bit 3
PULLUP#.
12
RW
NVM
11:3
3
Reserved
PULLUP#
RW
RW
NVM
NVM
Reserved. Must be 000000000b
Sets the pullup of the PGD/RESET_B pin when RESET# = 1b.
0b: Internal pullup of the PGD/RESET_B pin enabled when RESET# = 1b.
1b: Internal pullup of PGD/RESET_B pin disabled when RESET# = 1b.
0b: Fault counter counts down one cycle on PWM cycle without fault
1b: Fault counter resets counter to 0 on PWM cycle without fault.
2
FLT_CNT
ADC_RES
RW
RW
NVM
NVM
ADC resolution control
00b: Set ADC resolution to 12-bit.
01b: Set ADC resolution to 10-bit.
10b: Set ADC resolution to 8-bit.
11b: Set ADC resolution to 6-bit.
1:0
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7.6.84 (EEh) MFR_SPECIFIC_30 (PIN_DETECT_OVERRIDE)
CMD Address
Write Transaction:
Read Transaction:
Format:
EEh
Write Word
Read Word
Unsigned Binary (1 byte)
Phased:
No
NVM Backup:
Updates:
EEPROM
On-the-fly (pin detection occurs on POR only)
PMBUS specified that NVM (default or user) stored values overwrite pin-programmed values. Setting a “1” in
each bit of this register prevents DEFAULT or USER STORE values from overwriting the pin-programmed value
associated that bit.
图7-90. (EEh) MFR_SPECIFIC_30 (PIN_DETECT_OVERRIDE) Register Map
15
14
13
12
11
10
9
8
RW
RW
RW
RW
RW
RW
RW
RW
STACK_CONFI
G
COMP_CONFI
G
Reserved
SYNC_CONFIG
Reserved
ADDRESS
7
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
RW
Reserved
INTERLEAVE
Reserved
TON_RISE
IOUT_OC
FREQ
VOUT
LEGEND: R/W = Read/Write; R = Read only
表7-101. Register Field Descriptions
Bit
Field
Access
Reset
Description
15:13
Reserved
RW
NVM
Not used and set to 000b.
STACK_CO
NFIG
0b: At power up or RESTORE, STACK_CONFIG is reset to NVM value.
1b: At power up or RESTORE, STACK_CONFIG is reset to pin-detected value.
12
RW
NVM
SYNC_CON
FIG
0b: At power up or RESTORE, SYNC_CONFIG is reset to NVM value.
1b: At power up or RESTORE, SYNC_CONFIG is reset to the pin-detected value.
11
10
RW
RW
NVM
NVM
Reserved
Not used and set to 0b or 1b
0b: At power up or RESTORE, COMPENSATION_CONFIG is reset to the NVM
COMP_CO
NFIG
value.
9
8
RW
RW
NVM
NVM
1b: At power up or RESTORE, COMPENSATION_CONFIG is reset to the pin-
detected value.
0b: At power up or RESTORE, Loop Follower_ADDRESS is reset to the NVM
value.
1b: At power up or RESTORE, Loop Follower_ADDRESS is reset to the pin-
detected value.
ADDRESS
Reserved
7:6
5
RW
RW
RW
RW
NVM
NVM
NVM
NVM
Not used and set to 00b.
INTERLEAV
E
0b: At power up or RESTORE, INTERLEAVE is reset to the NVM value.
1b: At power up or RESTORE, INTERLEAVE is reset to the pin-detected value.
4
Reserved
Not used and set to 0b or 1b.
0b: At power up or RESTORE, TON_RISE is reset to the NVM value.
1b: At power up or RESTORE, TON_RISE is reset to the pin-detected value.
3
TON_RISE
0b: At power up or RESTORE, IOUT_OC_FAULT_LIMIT and
IOUT_OC_WARN_LIMIT are reset to the NVM value.
1b: At power up or RESTORE, IOUT_OC_FAULT_LIMIT and
IOUT_OC_WARN_LIMIT are reset to the pin-detected value.
2
1
IOUT_OC
FREQ
RW
RW
NVM
NVM
0b: At power up or RESTORE, FREQUENCY_SWITCH is reset to the NVM value.
1b: At power up or RESTORE, FREQUENCY_SWITCH is reset to the pin-detected
value.
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表7-101. Register Field Descriptions (continued)
Bit
Field
Access
Reset
Description
0b: At power up or RESTORE, VOUT_COMMAND, VOUT_SCALE_LOOP,
VOUT_MAX, and VOUT_MIN are reset to the NVM value.
1b: At power up or RESTORE, VOUT_COMMAND, VOUT_SCALE_LOOP,
VOUT_MAX, and VOUT_MIN are reset to the pin-detected value.
0
VOUT
RW
NVM
PIN_DETECT_OVERRIDE allows the user to force pin-detected values to override the user store NVM value for
various PMBus commands during power-on reset and RESTORE_USER_ALL.
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7.6.85 (EFh) MFR_SPECIFIC_31 (DEVICE_ADDRESS)
CMD Address
Write Transaction:
Read Transaction:
Format:
EFh
Write Byte
Read Byte
Unsigned Binary (1 bytes)
No
Phased:
NVM Backup:
Updates:
EEPROM or Pin Detect
On-the-fly
The (EFh) MFR_SPECIFIC_31 (DEVICE_ADDRESS) command can be used to program or read-back the target
device address of digital communication. When (EFh) MFR_SPECIFIC_31 (DEVICE_ADDRESS) is updated, the
TPSM8D6B24 updates its target device address and the TPSM8D6B24 stops responding to its prior address
and start responding to its new address immediately. Attempts to write to or read from its prior address are
NACKed.
The DEVICE_ADDRESS command can be used to program or read-back the target device address of digital
communication. When a target device address is updated, the TPSM8D6B24 starts responding to the new
address immediately.
图7-91. (EFh) MFR_SPECIFIC_31 (DEVICE_ADDRESS) Register Map
7
R
0
6
5
4
3
2
1
0
RW
RW
RW
RW
RW
RW
RW
ADDR_PMBUS
LEGEND: R/W = Read/Write; R = Read only
表7-102. Register Field Descriptions
Bit
Field
Access
Reset
Description
Not
supported
7
R
0b
Not supported. Set to b'0.
ADDR_
PMBUS
NVM/
Pinstrap
6:0
RW
PMBus target device address
There are a number of target device address values which are reserved in the SMBus specification. The
following reserved addresses are invalid and cannot be programmed:
• 0x0C
• 0x28
• 0x37
• 0x61
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7.6.86 (F0h) MFR_SPECIFIC_32 (NVM_CHECKSUM)
CMD Address
Write Transaction:
Read Transaction:
Format:
F0h
NA
Read Word
Unsigned Binary (2 bytes)
Phased:
No
NVM Backup:
Updates:
EEPROM
At boot-up, and following NVM Store/Restore operations.
NVM_CHECKSUM reports the CRC-16 (polynomial 0x8005) checksum for the current NVM settings.
图7-92. (F0h) MFR_SPECIFIC_32 (NVM_CHECKSUM) Register Map
15
R
14
13
12
11
10
9
8
R
R
R
R
R
R
R
NVM_CHECKSUM
7
6
5
4
3
2
1
0
R
R
R
R
R
R
R
R
NVM_CHECKSUM
LEGEND: R/W = Read/Write; R = Read only
表7-103. Register Field Descriptions
Bit
Field
Access
Reset
Description
NVM_
CHECKSU
M
Per NVM
Settings
15:0
R
CRC16 for EEPROM settings
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7.6.87 (F1h) MFR_SPECIFIC_33 (SIMULATE_FAULT)
CMD Address
Write Transaction:
Read Transaction:
Format:
F1h
Write Word
Read Word
Unsigned Binary (2 bytes)
Phased:
Yes
No
NVM Backup:
SIMULATE_FAULT allows the user to simulate fault and warning conditions by triggering the output of the
detection circuit for that controls it. Multiple faults can be simulated at once.
图7-93. (F1h) MFR_SPECIFIC_F1 (SIMULATE_FAULT) Register Map
15
14
13
12
11
10
9
8
W/R
W/R
W/R
W/R
W/R
W/R
W/R
W/R
FAULT_PERSI SIM_TEMP_OT
SIM_IOUT_OC
F
SIM_VOUT_UV SIM_VOUT_OV
Reserved
SIM_VIN_OFF SIM_VIN_OVF
ST
F
F
F
7
6
5
4
3
2
1
0
W/R
W/R
W/R
W/R
W/R
W/R
W/R
W/R
WARN_PERSIS
T
SIM_IOUT_OC
W
SIM_VOUT_UV SIM_VOUT_OV
Reserved
Reserved
SIM_VIN_UVW
Reserved
W
W
LEGEND: R/W = Read/Write; R = Read only
表7-104. Register Field Descriptions
Bit
Field
Access
Reset
Description
FAULT_PER
SIST
0b: Simulated faults are automatically removed after one fault response.
1b: Simulated faults persist until SIMULATE_FAULTS is written again.
15
W/R
0b
SIM_TEMP_
OTF
0b: No change
1b: Simulate overtemperature fault.
14
13
12
11
10
9
W/R
W/R
W/R
W/R
W/R
W/R
W/R
W/R
W/R
W/R
W/R
W/R
W/R
0b
0b
0b
0b
0b
0b
0b
0b: No change
1b: Not used
Reserved
SIM_IOUT_
OCF
0b: No change
1b: Simulate output current overcurrent fault.
SIM_VIN_O
FF*
0b: No change
1b: Simulate PVIN undervoltage lockout.
SIM_VIN_O
VF
0b: No change
1b: Simulate PVIN overvoltage fault.
SIM_VOUT_
UVF
0b: No change
1b: Simulate VOUT undervoltage fault.
SIM_VOUT_
OVF*
0b: No change
1b: Simulate VOUT overvoltage fault.
8
WARN_PER
SIST
Default
Settings
0b: Simulated warnings are automatically removed after one Fault response.
1b: Simulated warnings persist until SIMULATE_FAULTS is written again.
7
Default
Settings
0b: No change
1b: Not used
6
Reserved
Reserved
Default
Settings
0b: No change
1b: Not used
5
SIM_IOUT_
OCW
Default
Settings
0b: No change
1b: Simulate output current overcurrent warning.
4
SIM_VIN_U
VW
Default
Settings
0b: No change
1b: Simulate PVIN undervoltage warning.
3
Default
Settings
0b: No change
1b: Not used
2
Reserved
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表7-104. Register Field Descriptions (continued)
Bit
Field
Access
Reset
Description
SIM_VOUT_
UVW
Default
Settings
0b: No change
1b: Simulate VOUT undervoltage warning.
1
W/R
SIM_VOUT_
OVW
Default
Settings
0
W/R
0b: No change, 1b: Simulate VOUT overvoltage warning.
*Only SIM_VIN_OFF and SIM_VOUT_OVF are allowed to trigger their analog comparator while conversion is
disabled. All other faults, including SIM_TEMP_OTF and SIM_VIN_OVF, only simulate while conversion is
enabled to allow these faults to simulate repeated shutdown and restart responses when FAULT_PERSIST is
selected.
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7.6.88 (FCh) MFR_SPECIFIC_44 (FUSION_ID0)
CMD Address
Write Transaction:
Read Transaction:
Format:
FCh
Write Word (writes accepted but otherwise ignored)
Read Word
Unsigned Binary (2 bytes)
Phased:
No
No
NVM Backup:
FUSION_ID0 provides a platform level identification code to be used by Texas Instruments Digital Power
Designer for identifying a TI device.
Writes to this command are accepted, but ignored otherwise (the readback value of this command does not
change following a write attempt). This command is writable for some TI devices, so to maintain cross-
compatibility, the TPSM8D6B24 accepts write transactions to this command as well. No STATUS_CML bits are
set as a result of the receipt of a write attempt to this command.
图7-94. (FCh) MFR_SPECIFIC_44 (FUSION_ID0) Register Map
15
R
14
R
13
12
11
10
9
8
R
R
R
R
R
R
FUSION_ID0
FUSION_ID0
7
6
5
4
3
2
1
0
R
R
R
R
R
R
R
R
LEGEND: R/W = Read/Write; R = Read only
表7-105. Register Field Descriptions
Bit
Field
Access
Reset
Description
FUSION_
ID0
15:0
R
02D0h
Hard coded to 02D0h
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7.6.89 (FDh) MFR_SPECIFIC_45 (FUSION_ID1)
CMD Address
Write Transaction:
Read Transaction:
Format:
FDh
Block Write (writes accepted but otherwise ignored)
Block Read
Unsigned Binary (6 bytes)
Phased:
No
No
NVM Backup:
FUSION_ID1 provides a platform level identification code to be used by Texas Instruments Digital Power
Designer for identifying a TI device.
Writes to this command are accepted, but ignored otherwise (the readback value of this command does not
change following a write attempt). This command is writable for some TI devices, so to maintain cross-
compatibility, the TPSM8D6B24 accepts write transactions to this command as well. No STATUS_CML bits are
set as a result of the receipt of a write attempt to this command.
图7-95. (FDh) MFR_SPECIFIC_45 (FUSION_ID1) Register Map
47
R
46
R
45
44
43
42
41
R
40
R
R
R
R
R
FUSION_ID1
39
R
38
R
37
R
36
R
35
R
34
R
33
R
32
R
FUSION_ID1
FUSION_ID1
31
30
29
28
27
26
25
24
23
R
22
R
21
R
20
R
19
R
18
R
17
R
16
R
FUSION_ID1
FUSION_ID1
FUSION_ID1
15
R
14
R
13
R
12
R
11
R
10
R
9
8
R
R
7
6
5
4
3
2
1
0
R
R
R
R
R
R
R
R
LEGEND: R/W = Read/Write; R = Read only
表7-106. Register Field Descriptions
Bit
Field
Access
Reset
4Bh
43h
Description
47:40
39:32
31:24
23:16
15:8
FUSION_ ID1
FUSION_ ID1
FUSION_ ID1
FUSION_ ID1
FUSION_ ID1
FUSION_ ID1
R
R
R
R
R
R
Hard coded to 4Bh
Hard coded to 43h
Hard coded to 4Fh
Hard coded to 4Ch
Hard coded to 49h
Hard coded to 54h
4Fh
4Ch
49h
7:0
54h
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8 Application and Implementation
备注
以下应用部分中的信息不属于TI 器件规格的范围,TI 不担保其准确性和完整性。TI 的客 户应负责确定
器件是否适用于其应用。客户应验证并测试其设计,以确保系统功能。
8.1 Application Information
The TPSM8D6B24 is a highly integrated, dual synchronous step-down DC/DC module. This device is used to
convert a higher DC-input voltage to a lower DC-output voltage, with a maximum output current of 35 A per
output. Use the following design procedures to select key component values for single phase through four phase
design. The appropriate behavioral options can be set through PMBus.
8.2 Typical Application
Input: 2.95
V
to 16
V
Output: 0.8 V at 35 A
VIN
VOUT_A
C1
100uF
C2
100uF
C3
100uF
C4
22uF
C5
22uF
C6
22uF
C7
22uF
C8
6800pF
C9
10µF
C10
10µF
C16
47uF
C17
47uF
C20
47uF
C21
47uF
C11
47uF
C12
47uF
C13
47uF
C14
47uF
C15
47uF
C18
47uF
C19
47uF
C22
47uF
C23
47uF
C24
C25
470uF
470uF
GND
GND
U1
18
55
19
51
50
2
PVIN_A
PVIN_A
EN_A
VOUT_A
VOUT_A
VOSNS_A
SW_A
R1
CNTL
53
49.9
C26
100pF
R2
17
54
3
PGND
PGND
GOSNS/FLWR_A
49.9
1
4
49
52
PGND
PGND
PGND
PGND
R3
10
20
21
AVIN_A
AGND_A
Output: 1.2 V at 35
A
24
56
25
47
48
45
58
PVIN_B
PVIN_B
EN_B
VOUT_B
VOUT_B
VOSNS_B
SW_B
VOUT_B
C27
100uF
C28
22uF
C29
22uF
C30
22uF
C31
22uF
C32
6800pF
C33
100pF
C34
10µF
C35
10µF
C41
47uF
C42
47uF
C45
47uF
C46
47uF
C36
47uF
C37
47uF
C38
47uF
C39
47uF
C40
47uF
C43
47uF
C44
47uF
C47
47uF
C48
47uF
C49
470uF
C50
470uF
23
57
44
PGND
PGND
GOSNS/FLWR_B
GND
30
43
46
59
PGND
PGND
PGND
PGND
26
27
AVIN_B
AGND_B
R4
49.9
VDD5_A 22
7
8
6
VDD5_A
PMB_CLK_A
PMB_DATA_A
SMB_ALRT_A
PMB_CLK
PMB_DATA
SMB_ALRT
R5
5
12
16
15
14
BP1V5_A
VSHARE_A
MSEL2_A
VSEL_A
49.9
11
10
9
VDD5_A
BCX_CLK_A
BCX_DATA_A
PGD/RST_A
R6
10.0k
ADRSEL_A
PGD/RST_A
13
MSEL1_A
R7
0
R8
14.7k
R9
10.0k
R10
14.7k
VDD5_B 28
40
39
41
VDD5_B
PMB_CLK_B
PMB_DATA_B
SMB_ALRT_B
BP1V5_B 42
BP1V5_B
VSHARE_B
MSEL2_B
VSEL_B
35
31
32
33
34
36
37
38
29
VDD5_B
BCX_CLK_B
BCX_DATA_B
PGD/RST_B
SYNC
R11
10.0k
BP1V5_B
ADRSEL_B
MSEL1_B
PGD/RST_B
SYNC
R12
26.1k
R13
0
R14
68.1k
R15
26.1k
R16
14.7k
TPSM8D6x24MOW59
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8.2.1 Design Requirements
For this design example, use the input parameters listed in 表8-1.
表8-1. Design Parameters
Design Parameter
Input voltage
Test Conditions
MIN
TYP
12
MAX Unit
VIN
5
16
V
V
V
V
VIN(ripple)
Input ripple voltage
Output voltage
VIN = 12 V, IOUT = 20 A
0.3
1.8
3.3
VOUT
VOUT
A
B
Output voltage
Line regulation
0.1%
0.1%
ΔVO(ΔVI)
ΔVO(ΔIO)
VPP
5 V ≤VIN ≤16 V
0 V ≤IOUT ≤25 A
IOUT = 25 A
Load regulation
Output ripple voltage
VOUT deviation during load transient
Output current
20
50
mV
mV
A
∆VOUT
IOUT
∆IOUT = 10 A, VIN = 12 V
5 V ≤VIN ≤16 V
0
25
IOCP
Output overcurrent protection threshold
Switching frequency
Full load efficiency
39
550
88%
91%
5
A
fSW
VIN = 12 V
kHz
VIN = 12 V, VOUT = 1.8 V, IOUT = 25 A
VIN = 12 V, VOUT = 3.3 V, IOUT = 25 A
ηFull load
ηFull load
tSS
Full load efficiency
Soft-start time (tON_RISE
)
ms
8.2.2 Detailed Design Procedure
The TPSM8D6B24 provides four pins to program critical PMBus register values without requiring PMBus
communication prior to first power up. Please refer to 表 7-7 for the pinstrapping options. Some equations
include a variable N, which is the number of channels stacked together. In this standalone device example, the
value of N is equal to 1.
8.2.2.1 Custom Design With WEBENCH® Tools
Click here to create a custom design using the TPSM8D6B24 device with the WEBENCH® Power Designer.
1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements.
2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial.
3. Compare the generated design with other possible solutions from Texas Instruments.
The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time
pricing and component availability.
In most cases, these actions are available:
• Run electrical simulations to see important waveforms and circuit performance
• Run thermal simulations to understand board thermal performance
• Export customized schematic and layout into popular CAD formats
• Print PDF reports for the design, and share the design with colleagues
Get more information about WEBENCH tools at www.ti.com/WEBENCH.
8.2.2.2 Switching Frequency
The MSEL1 pin programs USER_DATA_01 (COMPENSATION_CONFIG) and FREQUENCY_SWITCH. The
resistor divider ratio for MSEL1 selects the nominal switching frequency. In the design procedure for MSEL1,
switching frequency is configured first, then compensation is chosen after output capacitance is determined.
There is a trade-off between higher and lower switching frequencies for buck converters. Higher switching
frequencies can produce smaller solution size using lower valued inductors and smaller output capacitors
compared to a power supply that switches at a lower frequency. However, the higher switching frequency causes
extra switching losses, which decrease efficiency and impact thermal performance.
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In this design, a moderate switching frequency of 550 kHz achieves both a small solution size and a high-
efficiency operation. Use the MSEL1 pin program table to select the frequency option. See 表 7-8 for resistor
divider code selection. Resistor divider code 2 or 3 is needed to set the switching frequency to 550 kHz.
8.2.2.3 Inductor Selection
Use 方程式 9 to calculate the value of the output inductor (L). The coefficient, KIND, represents the amount of
inductor-ripple current relative to the maximum output current. The output capacitor filters the inductor-ripple
current. Therefore, selecting a high inductor-ripple current impacts the selection of the output capacitor because
the output capacitor must have a ripple-current rating equal to or greater than the inductor-ripple current.
Generally, the KIND coefficient should be kept between 0.2 and 0.3 for balanced performance. Additionally the
product of KIND and IOUT(Max) should be kept above 1 Ato prevent the inductance from being too large. Using
this target ripple current, the required inductor size can be calculated as shown in 方程式9.
V
- VOUT
(
)
18 V -1.2 V
20 A
ì0.3
1
IN Max
VOUT
(
)
IOUT Max
(
)
= 287 nH
1.2 V
L =
ì
=
ì
V
) ì fSW Min
)
18 V ì650 kHz
(
N
)
IN Max
(
(
ìKIND
(9)
Selecting a value of 0.3 for the KIND coefficient, the target inductance, L, is 287 nH. An inductance of 300 nH is
selected. Use 方程式 10, 方程式 11, and 方程式 12 to calculate the inductor-ripple current (IRIPPLE), RMS current
(IL(rms)), and peak current (IL(peak)), respectively. Use these values to select an inductor with approximately the
target inductance value, and current ratings that allow normal operation with some margin.
V
- VOUT
1.2 V ì 18 V -1.2 V
VOUT
(
)
IN(Max)
IRIPPLE
=
ì
=
= 5.74 A
V
IN(Max) ì fSW(Min)
L1
18 V ì 650 kHz ì300 nH
(10)
2
2
I
≈
’
OUT Max
1
20 A
1
1
(
N
)
2
≈
’
2
∆
∆
«
÷
÷
◊
IL rms
=
+
I
(
=
+
5.74 A = 20 A
)
(
)
RIPPLE
∆
«
÷
◊
(
)
12
12
(11)
(12)
IOUT Max
1
20 A
1
1
2
(
)
IL peak
=
+
I
=
+
ì 5.74 A = 22.9 A
(
)
(
)
RIPPLE
(
)
N
2
Considering the required inductance, RMS current and peak current, the 300-nH inductor, SLC1175-301ME,
from Coilcraft was selected for this application.
8.2.2.4 Output Capacitor Selection
Output capacitors are selected to meet the output ripple requirements and stabilize the votlage loop below
VBW(max)
.
To stabilize the loop below VBW(max), evaluate the output impedance of available electrolytic and ceramic
capacitors at the target voltage loop bandwidth frequency and combine capacitors in parallel to reduce the total
output impedance of the capacitor bank below.
CSA
Z
<
<
(13)
OUT V
N × V
× VOUT_SCALE_LOOP
BW
BW
LOOP
6.511 mV/A
1 × 4 × 0.5
Z
Z
= 3.255 mΩ
1
(14)
(15)
OUT V
1
=
=
= 38.9 mΩ
C_47µF
2πf
C
2π × 87 kHz × 47 µF
SW
1
1
Z
=
= = 3.89 mΩ
2π × 87 kHz × 470 µF
(16)
C_470µF
2πf
C
SW
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8.2.2.4.1 Output Voltage Deviation During Load Transient
The desired response to a load transient is the first criterion for output capacitor selection. The output capacitor
must supply the load with the required current when not immediately provided by the regulator. When the output
capacitor supplies load current, the impedance of the capacitor affects the magnitude of the voltage deviation
during the transient.
To meet the requirements for control-loop stability, the device requires the addition of compensation components
in the design of the error amplifier. While these compensation components provide for a stable control loop, they
often also reduce the speed with which the regulator can respond to load transients. The delay in the regulator
response to load changes can be two or more clock cycles before the control loop reacts to the change. During
that time, the difference (delta) between the old and the new load current must be supplied (or absorbed) by the
output capacitance. The output capacitor impedance must be designed to supply or absorb the delta current
while maintaining the output voltage within acceptable limits. 方程式 17 and 方程式 18 show the relationship
between the transient response overshoot (VOVER), the transient response undershoot (VUNDER), and the
required output capacitance (COUT).
2
(ITRAN
)
ì L
VOVER
<
VOUT ì COUT
(17)
(18)
2
(ITRAN
) ì L
VUNDER
<
(VIN - VOUT ) ì COUT
• If VIN(min) > 2 × VOUT, use overshoot to calculate minimum output capacitance.
• If VIN(min) < 2 × VOUT, use undershoot to calculate minimum output capacitance.
In this case, the minimum designed input voltage, VIN(min), is greater than 2 × VOUT, so VOVER dictates the
minimum output capacitance. Therefore, using 方程式 19, the minimum output capacitance required to meet the
transient requirement is 600 µF.
I
2 ìL
10 A 2 ì300 nH
(
)
(
)
TRAN
COUT Min
=
=
= 600 µF
(
)
VOUT ì VOVER
1 V ì50 mV
(19)
The bandwidth of the voltage loop must also be considered when calculating the minimum output capacitance.
The voltage loop can typically be compensated to have a bandwidth of 1/10th the fSW. 方程式 20 calculates the
minimum output capacitance to be 979 µF.
1
1
COUT Min
=
=
= 979 µF
(
)
fSW VTRAN
325 kHz 50 mV
2pì
ì
2pì
ì
10
10 A
10 ITRAN
(20)
8.2.2.4.2 Output Voltage Ripple
The output-voltage ripple is the second criterion for output capacitor selection. Use 方程式 21 to calculate the
minimum output capacitance required to meet the output-voltage ripple specification.
I
RIPPLE
9.62 A
8 × 550 kHz × 20 mV
C
=
=
= 110µF
(21)
OUT min
8 × f × V
sw
OUT RIPPLE
In this case, the target maximum output-voltage ripple is 20 mV. Under this requirement, the minimum output
capacitance for ripple is 110 µF. This capacitance value is smaller than the output capacitance required for the
transient response, so select the output capacitance value based on the transient requirement. Considering the
variation and derating of capacitance, in this design, two 470-µF low-ESR tantalum polymer bulk capacitors and
four 47-µF ceramic capacitors were selected to meet the transient specification with sufficient margin. Therefore,
the selected nominal COUT is equal to 1128 µF.
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With the output capacitance value selected the ESR must be considered. This is an important consideration in
this example because it uses mixed output capacitor types. First use 方程式 22 to calculate the maximum
allowable impedance for the output capacitor bank at the switching frequency to meet the output voltage ripple
specification. 方程式 22 indicates the output capacitor bank impedance should be less than 2.1 mΩ. The
impedance of the ceramic capacitors is calculated with 方程式 23 and the impedance of the bulk capacitor is
calculated with 方程式 24. The result from 方程式 24 shows the impedance of the bulk capacitor at the switching
frequency is dominated by its ESR. 方程式 25 calculates the total output impedance of the output capacitor bank
at the switching frequency to be 1.2 mΩ, which meets the 2.1-mΩrequirement.
VOUT RIPPLE
20 mV
(
IRIPPLE
)
ZCOUT Max _ f
=
=
= 2.1 mꢀ
(
)
SW
9.62 A
(22)
(23)
1
1
Z
Z
Z
=
=
= 1.5 mΩ
CER_f
2π × f × C
sw
2π × 550 kHz × 4 × 47 µF
sw
CER
2
2
2
2
1
10 mΩ
2
1
=
ESR
+
=
+
= 5.3 mΩ
(24)
(25)
BULK_f
COUT_f
BULK
2π × f
× C
sw
2π × 550 kHz × 2 × 470 µF
SW
BULK
Z
× Z
CER_f
CER_f
BULK_f
+ Z
BULK_f
sw
sw
sw
sw
1.5 mΩ × 5.3 mΩ
= 1.2 mΩ
1.5 mΩ + 5.3 mΩ
=
=
Z
sw
8.2.2.5 Input Capacitor Selection
The power-stage input-decoupling capacitance (effective capacitance at the PVIN and PGND pins) must be
sufficient to supply the high switching currents demanded when the high-side MOSFET switches on, while
providing minimal input-voltage ripple as a result. This effective capacitance includes any DC-bias effects. The
voltage rating of the input capacitor must be greater than the maximum input voltage with derating. The capacitor
must also have a ripple-current rating greater than the maximum input-current ripple to the device during full
load. Use 方程式26 to estimate the input RMS current.
I
V
− V
OUT
V
OUT MAX
N
IN Min
V
5 V − 0.8 V
OUT
35 A
1
0.8 V
5 V
I
=
×
×
=
×
×
= 12.8 A
(26)
IN RMS
V
5 V
IN Min
IN Min
The minimum input capacitance and ESR values for a given input voltage-ripple specification, VIN(ripple), are
shown in 方程式 27 and 方程式 28. The input ripple is composed of a capacitive portion (VRIPPLE(cap)) and a
resistive portion (VRIPPLE(esr)).
I
OUT MAX
35 A
1
× V
× 0.8 V
OUT
N
C
=
=
= 31.8 µF
(27)
(28)
IN Min
V
× V
× f
0.1 V × 16 V × 550 kHz
RIPPLE cap
IN Max
SW
V
RIPPLE ESR
0.2 V
ESR
=
=
= 5.02 mΩ
CIN Max
I
35 A
1
1
2
OUT Max
N
1
+
× 9.62 A
+
I
RIPPLE
2
The value of a ceramic capacitor varies significantly over temperature and the amount of DC bias applied to the
capacitor. The capacitance variations because of temperature can be minimized by selecting a dielectric material
that is stable over temperature. X5R and X7R ceramic dielectrics are usually selected for power-regulator
capacitors because these components have a high capacitance-to-volume ratio and are fairly stable over
temperature. The input capacitor must also be selected with consideration of the DC bias. For this example
design, a ceramic capacitor with at least a 25-V voltage rating is required to support the maximum input voltage.
For this design, allow 0.1-V input ripple for VRIPPLE(cap) and 0.2-V input ripple for VRIPPLE(esr). Using 方程式 27
and 方程式 28, the minimum input capacitance for this design is 31.8 µF, and the maximum ESR is 5.02 mΩ.
For this design example, four 22-μF, 25-V ceramic capacitors, three 6800-pF, 25-V ceramic capacitors, and two
additional 100-μF, 25-V low-ESR electrolytic capacitors in parallel were selected for the power stage with
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sufficient margin. For all designs a minimum input capacitance of 10 µF is required and a maximum input ripple
of 500 mV is recommended.
To minimize the high frequency ringing, the high frequency 6800-pF PVIN bypass capacitors must be placed
close to power stage.
8.2.2.6 AVIN, BP1V5, and VDD5 Bypass Capacitor
The minimum required bypass capacitors for the BP1V5, VDD5, and AVIN pins are integrated into the module.
Only a small 10-Ω is recommended to be placed between PVIN and AVIN when using split rail inputs. If the
AVIN pin is connected to the VDD5 pin, a small 10-Ωvalue resistor is recommended to be placed between AVIN
and VDD5.
8.2.2.7 Bootstrap Capacitor Selection
A boot capacitor is integrated into the module.
8.2.2.8 Output Voltage Setting (VSEL Pin)
The output voltage can be set using the VSEL pin. The resistor divider ratio for VSEL programs the
VOUT_COMMAND range, VOUT_SCALE_LOOP divider, VOUT_MIN, and VOUT_MAX levels according to 表
7-12. Select the resistor divider code for the range of VOUT desired. For this 1-V output example, resistor divider
code 2, a single resistor to AGND or floating the VSEL pin can be used.
With the resistor divider code selected for the range of VOUT, select the resistor to AGND code with the
VOUT_COMMAND offset and VOUT_COMMAND step from 表 7-13. To calculate the resistor to AGND code
subtract the VOUT_COMMAND offset from the target output voltage and divide by the VOUT_COMMAND step.
For this example, a single resistor to AGND was used and the result is code 6. A 14.7-kΩ resistor to AGND at
VSEL programs the desired setting.
V
− VOUT_COMMAND
Offset
OUT
0.8 − 0.25
0.020
Code =
=
= 27.5
(29)
VOUT_COMMAND
STEP
8.2.2.9 R-C Snubber
An R-C snubber must be placed between the switching node and PGND to reduce voltage spikes on the
switching node. The power rating of the resistor must be larger than the power dissipation on the resistor with
sufficient margin. To balance efficiency and voltage spike amplitude, a 1-nF capacitor and a 1-Ω resistor were
selected for this design. In this example, an 0805 resistor was selected, which is rated for 0.125 W.
8.2.2.10 Output Voltage Setting (VSEL Pin)
The output voltage can be set using the VSEL pin. The resistor divider ratio for VSEL programs the
VOUT_COMMAND range, VOUT_SCALE_LOOP divider, VOUT_MIN, and VOUT_MAX levels according to 表
7-12. Select the resistor divider code for the range of VOUT desired. For this 1-V output example, resistor divider
code 2, a single resistor to AGND or floating the VSEL pin can be used.
With the resistor divider code selected for the range of VOUT, select the resistor to AGND code with the
VOUT_COMMAND offset and VOUT_COMMAND step from 表 7-13. To calculate the resistor to AGND code
subtract the VOUT_COMMAND offset from the target output voltage and divide by the VOUT_COMMAND step.
For this example, a single resistor to AGND was used and the result is code 6. A 14.7-kΩ resistor to AGND at
VSEL programs the desired setting.
V
− VOUT_COMMAND
Offset
OUT
0.8 − 0.25
0.020
Code =
=
= 27.5
(30)
VOUT_COMMAND
STEP
8.2.2.11 Compensation Selection (MSEL1 Pin)
The resistor to AGND for MSEL1 selects the (B1h) USER_DATA_01 (COMPENSATION_CONFIG) values to
program the following voltage loop and current loop gains. For options other than the EEPROM code (MSEL1
shorted to AGND or MSEL1 to AGND resistor code 0), the current and voltage loop zero and pole frequencies
are scaled with the programmed switching frequency.
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Based on 表 8-2, for a switching frequency of 550k kHz, the TPSM8D6B24 should use an ILOOP of 6 and a
maximum voltage loop bandwidth of 87 kHz.
表8-2. Recommended ILOOP Settings
fsw (kHz)
325
ILOOP
VBW(max)
43
3
375
4
58
450
5
72
550
6
87
650
7
101
115
115
144
115
173
216
115
245
750
8
900
8
900
10
8
1100
1100
1300
1500
1500
12
15
8
17
In order to achieve the desired transient performance, VLOOP needs to be selected to satisfy the equation (方程
式31).
ΔV
OUT
OUT
CSA
V
>
×
(31)
LOOP
ΔI
N × VOUT_SCALE_LOOP
For this design, VLOOP = 4 is selected.
For ILOOP = 6, VLOOP = 4, Compensation Code 24 is selected and MSEL1 is terminated with no resistor divider
and resistor to ground code 14, selecting a 68.1-kΩ resistor.
备注
More conservative Current and Voltage Loops can be selected by selecting a lower ILOOP gain and
reducing the maximum voltage loop bandwidth proportionally.
8.2.2.12 Soft Start, Overcurrent Protection, and Stacking Configuration (MSEL2 Pin)
Soft-start time, overcurrent protection thresholds, and stacking configuration can be configured using the MSEL2
pin. The TPSM8D6B24 device support several soft-start times from 0 to 31.75 ms in 250-µs steps (7 bits)
selected by the TON_RISE command. Eight times are selectable using the MSEL2 pin. The TPSM8D6B24
device support several low-side overcurrent warn and fault thresholds from 8 to 62 A selected by the
IOUT_OC_WARN_LIMIT and IOUT_OC_FAULT_LIMIT commands. Four thresholds are selectable using the
MSEL2 pin. The response to an OC fault can be changed through PMBus. Lastly, the number of devices stacked
is set using the MSEL2 pin.
The resistor divider code for MSEL2 selects the soft-start values. The resistor to AGND determines the number
of devices sharing common output and the overcurrent thresholds. Use 表7-11 and 表7-10 to select the resistor
to AGND code and resistor divider code needed for the desired configuration.
In this single-phase design, resistor divider code 3 is selected for 5-ms soft start and resistor to AGND code 0 is
selected for the highest current limit thresholds and standalone configuration.
8.2.2.13 Enable and UVLO
The ON_OFF_CONFIG command is used to select the turn-on behavior of the converter. For this example, the
EN/UVLO pin or CONTROL pin was used to enable or disable the converter, regardless of the state of
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OPERATION, as long as the input voltage is present and above the UVLO threshold. The EN/UVLO pin is pulled
low internally if it is floating.
A resistor divider can be added the EN/UVLO pin to program an additional UVLO. Additionally 0.1 µF can be
placed on this pin to filter noise or short glitches. Use 方程式 32 and 方程式 33 to calculate the resistor values to
target a 4.75-V turn-on and a 4.25-V turn-off. Standard resistor values of 30.1 kΩ and 8.66 kΩ are selected for
this example. Use 方程式34 and 方程式35 to calculate the thresholds based on selected resistor values.
VON ì VENFALL - VOFF ì VENRISE
NìIENHYS ì VENRISE
4.75 V ì0.98 V - 4.25 V ì1.05 V
1ì5.5 µA ì1.05 V
RENTOP
=
=
= 33.3 kꢀ
(32)
(33)
(34)
RENTOP ì VENFALL
30.1kWì0.98 V
RENBOT
=
=
= 8.59 kꢀ
VOFF - VENFALL +NìIENHYS ìRENTOP 4.25 V -0.98 V +1ì5.5 µAì30.1kW
VENRISE ì R
+ RENTOP
1.05 V ì 8.66 kW + 30.1 kW
(
)
(
)
= 4.7 V
ENBOT
VON
=
=
RENBOT
8.66 kW
VENFALL ì R
+ RENTOP
0.98 V ì 7.50 kW + 30.1 kW
(
)
(
)
-1ì 5.5 µA ì30.1 kW = 4.75 V
ENBOT
VOFF
=
-NìIENHYS ìRENTOP
=
RENBOT
7.50 kW
(35)
8.2.2.14 ADRSEL
In this example, the ADRSEL pin is left floating. This sets the PMBus loop follower address to the EEPROM
value, 0x24h (36d) by default, and the SYNC pin to auto detect with 0 degrees phase shift. Use 表 7-14 and 表
7-15 to select the resistor to AGND code and resistor divider code needed for the desired configuration.
If through pinstrapping, the desired address is not possible with the SYNC pin set to auto detect and
synchronization is not needed in the application, the SYNC pin should be configured for SYNC_OUT. The device
still regulates normally with the SYNC pin configured for SYNC_IN, however, if there is not clock input to the
SYNC pin, the device declares a SYNC fault in the STATUS_MFR_SPECIFIC command.
8.2.2.15 Pin-Strapping Resistor Selection
The following tables provide the resistor to AGND values, in ohms, in the highlighted top rows and the top
resistor (pin to BP1V5) values, in ohms, in the unΩhighlighted cells. Select the column associated with the
desired resistor to AGND code and the row with the desired resistor divide code in 表7-17 and 表7-18.
8.2.2.16 BCX_CLK and BCX_DAT
For a standalone device, the BCX_CLK and BCX_DAT pins are not used. As shown in 表 7-5, TI recommends
grounding them to the thermal pad.
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8.2.3 Application Curves
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
PVIN = 5 V
PVIN = 12 V
PVIN = 16 V
PVIN = 5 V
PVIN = 12 V
PVIN = 16 V
0
5
10
15
20
25
0
5
10
15
20
25
Output Current (A)
Output Current (A)
VOUT = 1.8V
fSW = 550 kHz
VOUT = 3.3V
fSW = 550 kHz
图8-1. Efficiency vs Output Current
图8-2. Efficiency vs Output Current
1.805
1.8045
1.804
1.8035
1.803
1.8025
1.802
1.8015
1.801
1.8005
1.8
3.3345
3.334
3.3335
3.333
3.3325
3.332
3.3315
3.331
3.3305
3.33
PVIN = 5 V
PVIN = 12 V
PVIN = 16 V
PVIN = 5 V
PVIN = 12 V
PVIN = 16 V
0
5
10
15
20
25
0
5
10
15
20
25
Output Current (A)
Output Current (A)
VVIN = 12 V
VOUT = 1.8 V
VVIN = 12 V
VOUT = 3.3 V
图8-3. Load Regulation
图8-4. Load Regulation
1.804
1.8035
1.803
1.8025
1.802
1.8015
1.801
1.8005
1.8
3.3335
3.333
3.3325
3.332
3.3315
3.331
3.3305
3.33
IOUT = 0 A
IOUT = 0 A
IOUT = 10 A
IOUT = 15 A
IOUT = 25 A
IOUT = 10 A
IOUT = 15 A
IOUT = 25 A
5
6
7
8
9
10
11
12
13
14
15
16
5
6
7
8
9
10
11
12
13
14
15
16
Input Voltage (V)
Input Voltage (V)
VOUT = 1.8 V
VOUT = 3.3 V
图8-5. Line Regulation
图8-6. Line Regulation
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7
6
5
4
3
2
1
0
60
40
180
120
60
20
0
0
-20
-40
-60
-60
-120
PVIN = 5 V
PVIN = 12 V
PVIN = 16 V
Gain (dB)
Phase (°)
-180
1000000
1000 2000
5000 10000 20000
50000 100000200000
Frequency (Hz)
0
5
10
15
20
25
Output Current (A)
VOUT = 1.8 V
VIN = 12 V VOUT = 1.8 V
IOUT = 25 A
图8-7. Power Dissipation
图8-8. Total-Loop Bode Plot
60
40
180
120
60
20
0
0
-20
-40
-60
-60
-120
Gain (dB)
Phase (°)
-180
1000 2000
5000 10000 20000
50000 100000200000
1000000
Frequency (Hz)
VIN = 12 V
VOUT = 1.8 V
IOUT = 0 A
VIN = 12 V VOUT = 3.3 V
IOUT = 25 A
图8-10. Start-Up from EN/UVLO
图8-9. Total-Loop Bode Plot
VIN = 12 V
VOUT = 1.8 V
IOUT = 0 A
VIN = 12 V
VOUT = 1.8 V IOUT = 12.5 A to 25 A, 1 A/µs
图8-11. Enable Shutdown
图8-12. Load Transient Response
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VIN = 12 V
VOUT = 3.3 V IOUT = 12.5 A to 25 A, 1 A/µs
VIN = 12 V
VOUT = 1.8 V
IOUT = 25 A
图8-13. Load Transient Response
图8-14. VOUT Steady-State Ripple
VIN = 12 V
VOUT = 3.3 V
IOUT = 25 A
图8-15. VOUT Steady-State Ripple
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8.3 Two-Phase Application
Use the following design procedure to select key component values for two-phase design. The appropriate
behavioral options can be set through PMBus. Refer to 节 8.2.2 for the equations used to calculate the
component values in this example. The only difference is to increase value of N to 2 because there are two
devices stacked for a two-phase design. This procedure can also be used as reference for three-phase and four-
phase designs. Again the only difference is to increase the value of N to 3 and 4 for a three-phase and four-
phase design, respectively.
WEBENCH includes support for creating two-phase designs. The TPS546x24A Compensation and Pin-Strap
Resistor Calculator can also be used to aid in design calculations and pinstrap resistor selection.
Input: 2.95
V
to 16
V
Output: 0.8 V at 70 A
VIN
VOUT
GND
C1
100uF
C2
100uF
C3
100uF
C4
22uF
C5
22uF
C6
22uF
C7
22uF
C8
6800pF
C9
10µF
C10
10µF
C16
47uF
C17
47uF
C20
47uF
C21
47uF
C11
47uF
C12
47uF
C13
47uF
C14
47uF
C15
47uF
C18
47uF
C19
47uF
C22
47uF
C23
47uF
C24
470uF
C25
470uF
GND
U1
18
55
19
51
50
2
PVIN_A
PVIN_A
EN_A
VOUT_A
VOUT_A
VOSNS_A
SW_A
R1
CNTL
53
49.9
C26
100pF
R2
17
54
3
PGND
PGND
GOSNS/FLWR_A
49.9
1
4
49
52
PGND
PGND
PGND
PGND
R3
10
20
21
AVIN_A
AGND_A
24
56
25
47
48
45
58
PVIN_B
PVIN_B
EN_B
VOUT_B
VOUT_B
VOSNS_B
SW_B
C27
100uF
C28
22uF
C29
22uF
C30
22uF
C31
22uF
C32
6800pF
C33
10µF
C34
10µF
C40
47uF
C41
47uF
C44
47uF
C45
47uF
C35
47uF
C36
47uF
C37
47uF
C38
47uF
C39
47uF
C42
47uF
C43
47uF
C46
47uF
C47
47uF
C48
C49
BP1V5_B
470uF
470uF
R4
23
57
44
PGND
PGND
GOSNS/FLWR_B
10.0k
30
43
46
59
PGND
PGND
PGND
PGND
26
27
AVIN_B
AGND_B
VDD5_A 22
7
8
6
VDD5_A
PMB_CLK_A
PMB_DATA_A
SMB_ALRT_A
PMB_CLK
PMB_DATA
SMB_ALRT
5
12
16
15
14
BP1V5_A
VSHARE_A
MSEL2_A
VSEL_A
11
10
9
VDD5_A
BCX_CLK_A
BCX_DATA_A
PGD/RST_A
R5
10.0k
ADRSEL_A
PGD/RST
13
MSEL1_A
R6
14.7k
R7
10.0k
R8
14.7k
28
40
39
41
VDD5_B
PMB_CLK_B
PMB_DATA_B
SMB_ALRT_B
BP1V5_B 42
BP1V5_B
VSHARE_B
MSEL2_B
VSEL_B
35
31
32
33
34
36
37
38
29
BCX_CLK_B
BCX_DATA_B
PGD/RST_B
SYNC
R9
0
ADRSEL_B
MSEL1_B
SYNC
TPSM8D6x24MOW59
图8-16. TPSM8D6B24 Two-Phase Application
8.3.1 Design Requirements
For this design example, use the input parameters listed in 表8-1.
表8-3. Design Parameters
Design Parameter
Input voltage
Test Conditions
MIN
TYP
12
MAX Unit
VIN
5
16
V
V
V
VIN(ripple)
VOUT
Input ripple voltage
Output voltage
VIN = 12 V, IOUT = 20 A
0.3
1.8
Line regulation
0.5%
0.5%
ΔVO(ΔVI)
ΔVO(ΔIO)
VPP
5 V ≤VIN ≤16 V
0 V ≤IOUT ≤50 A
IOUT = 50 A
Load regulation
Output ripple voltage
20
mV
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表8-3. Design Parameters (continued)
Design Parameter
Test Conditions
MIN
TYP
MAX Unit
VOUT deviation during load transient
Output current
50
mV
∆VOUT
IOUT
∆IOUT = 20 A, VIN = 12 V
5 V ≤VIN ≤16 V
0
70
A
A
IOCP
Output overcurrent protection threshold
Switching frequency
80
550
88%
3
fSW
VIN = 12 V
kHz
Full load efficiency
VIN = 12 V, IOUT = 50 A
ηFull load
tSS
Soft-start time (tON_RISE
)
ms
8.3.2 Detailed Design Procedure
8.3.2.1 Switching Frequency
Only the primary channel needs a resistor divider at the MSEL1 pin to program USER_DATA_01
(COMPENSATION_CONFIG) and FREQUENCY_SWITCH. The MSEL1 pin of secondary channels are not
used. In this design, a moderate switching frequency of 550 kHz achieves both a small solution size and a high-
efficiency operation. Use the MSEL1 pin program table to select the frequency option. See 表 7-8 for resistor
divider code selection. With 550-kHz switching frequency, a single resistor to AGND can be used to program
compensation settings 7 to 25. To program all 32 compensation settings possible through MSEL1, resistor
divider code 6 or 7 sets the switching frequency to 550 kHz.
8.3.2.2 Inductor Selection
Use 方程式 9 to calculate the value of the output inductor (L) for each phase. The current is shared between
each phase so the output current used in this calculation is divided by the number of phases.
Selecting a value of 0.3 for the KIND coefficient, the target inductance, L, is 120 nH. An inductance of 150 nH is
selected. Use 方程式 10, 方程式 11, and 方程式 12 to calculate the inductor-ripple current (IRIPPLE), RMS current
(IL(rms)), and peak current (IL(peak)), respectively. The resulting values are IRIPPLE = 9.2 A, IL(rms) = 40.1 A and
IL(peak) = 44.6 A. Use these values to select an inductor with approximately the target inductance value and
current ratings that allow normal operation with some margin.
Considering the required inductance, RMS current and peak current, the 150-nH inductor, SLC1480-151ML,
from Coilcraft was selected for this application.
8.3.2.3 Output Capacitor Selection
The target maximum output-voltage ripple is 20 mV. Under this requirement, the minimum output capacitance for
ripple is 110 µF. Depending on the duty cycle and the number of phases, there can also be some inductor ripple
current cancellation. This reduces the amount of ripple current the capacitors need to absorb, reducing the
output voltage ripple. This capacitance value is smaller than the output capacitance required for the transient
response, so select the output capacitance value based on the transient requirement. Considering the variation
and derating of capacitance, in this design, four 470-µF low-ESR tantalum polymer bulk capacitors and twenty-
six 47-µF ceramic capacitors were selected to meet the transient specification with sufficient margin. The
selected nominal COUT is equal to 3102 µF. The 470-µF capacitors selected have an ESR of 10 mΩ.
With the output capacitance value selected, the ESR must be considered because this example uses mixed
output capacitor types. First, use 方程式 22 to calculate the maximum allowable impedance for the output
capacitor bank at the switching frequency to meet the output voltage ripple specification. 方程式 22 indicates the
output capacitor bank impedance should be less than 2.1 mΩ. The impedance of the ceramic capacitors alone
is calculated with 方程式 23 to be 0.2 mΩ. This is much less than the calculated maximum, so the ESR of
tantalum polymer capacitors does not need to be considered for the output ripple specification.
8.3.2.4 Input Capacitor Selection
Using 方程式 26, the maximum input RMS current is 12.8 A and the input capacitors must be rated to handle
this. When calculating this, the maximum output current should be divided by the number of phases. The output
current is divided by the number of phases because the switching nodes are interleaved. Interleaving the
switching node effectively divides the amplitude of the current pulses the input capacitor by the number of
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phases. With the 16-V maximum input in this example, a ceramic capacitor with at least a 25-V voltage rating is
required to support the maximum input voltage.
For this design, allow 0.1-V input ripple for VRIPPLE(cap) and 0.2-V input ripple for VRIPPLE(esr). Using 方程式 27
and 方程式 28, the minimum input capacitance for this design is 31.8 µF and the maximum ESR is 5.02 mΩ,
respectively. Again, the maximum output current should be divided by the number of phases and the calculated
capacitance must be placed near the loop controller converter and all of the loop follower converters. Eight 22-
μF, 25-V ceramic capacitors and six 6800-pF, 25-V ceramic capacitors in parallel were selected to bypass the
power stage with sufficient margin. Additionally, four 100-μF, 25-V low-ESR electrolytic capacitors were placed
on the input to minimize deviations on the input during transients. These capacitors are distributed equally
between the phases. To minimize the high frequency ringing, the high frequency 6800-pF PVIN bypass
capacitors must be placed close to power stage.
When stacking converters the amount of input RMS current and the amount if input capacitance required can be
further reduced. The amount of ripple cancellation depends on the number of phases and the duty cycle. PCB
inductance between the phases can also reduce the effects of ripple cancellation. The calculations given in this
example ignore the effects of ripple cancellation.
8.3.2.5 AVIN, BP1V5, VDD5 Bypass Capacitor
See 节8.2.2.6.
8.3.2.6 Bootstrap Capacitor Selection
See 节8.2.2.7.
8.3.2.7 R-C Snubber
See 节8.2.2.9.
8.3.2.7.1 Output Voltage Setting (VSEL Pin)
Only the loop controller device (U1) needs a resistor divider at the VSEL pin to program the output voltage. The
VSEL pin of loop follower devices are not used. The resistor divider code selected for this 0.8-V output example
using 表 7-12 is a single resistor to AGND. With the resistor divider code selected for the range of VOUT, select
the resistor to AGND code with the VOUT_COMMAND Offset and VOUT_COMMAND step from the 表 7-13.
With VOUT = 0.8 V, VOUT_COMMAND(Offset) = 0.5 V and VOUT_COMMAND(STEP) = 0.05, the result is code 6. A
14.7-kΩresistor to AGND at VSEL programs the desired setting.
8.3.2.8 Compensation Selection (MSEL1 Pin)
Only the loop controller device (U1) uses the resistor to AGND for MSEL1 to program the (B1h)
USER_DATA_01 (COMPENSATION_CONFIG) values to set the following voltage loop and current loop gains.
The MSEL1 pin of the loop follower devices are not used. For options other than the EEPROM code (MSEL1
shorted to AGND or MSEL1 to AGND resistor code 0), the current and voltage loop zero and pole frequencies
are scaled with the programmed switching frequency. See 节8.2.2.11 for more details.
8.3.2.9 GOSNS/Loop Follower Pin of Loop Follower Devices
Loop follower devices must have their GOSNS/Loop Follower pin tied to BP1V5 through a resistor. A 10-kΩ
resistor is recommended.
8.3.2.10 Soft Start, Overcurrent Protection, and Stacking Configuration (MSEL2 Pin)
The resistor divider code for MSEL2 pin of the loop controller device (U1) selects the soft-start values. The
resistor to AGND determines the number of devices sharing common output and the overcurrent thresholds. Use
表 7-10 and 表 7-11 to select the resistor values. In this two-phase design, the desired settings can be selected
by floating the MSEL2 pin. This selects 3-ms soft-start time, the highest current limit thresholds and two-phase
configuration.
In stackable configuration, loop follower devices use the resistor from MSEL2 to AGND to program
IOUT_OC_WARN_LIMIT,
IOUT_OC_FAULT_LIMIT,
MFR_SPECIFIC_28
(STACK_CONFIG),
and
INTERLEAVE. The loop follower receive all other pin programmed values from the loop controller over the back-
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channel communication (BCX_CLK and BCX_DAT) as part of the power-on reset function. In this two-phase
design, the desired settings can be selected by shorting the MSEL2 pin of the loop follower device to AGND.
This selects the highest current limit thresholds and programs the loop follower device to be the 180° out of
phase from the loop controller device.
8.3.2.11 Enable, UVLO
TI recommends connecting the EN/UVLO pins of stacked devices together. When this is done, the hysteresis
current is multiplied by the number devices stacked. This increased hysteresis current must be included in
calculations for a resistor divider to the EN/UVLO pins. See 节8.2.2.13 for more details.
8.3.2.12 VSHARE Pin
When using a stacked configuration, bypass the VSHARE pin of each device to AGND with a 33 pF or larger
capacitor. This capacitor is used to prevent external noise from adding to the VSHARE signal between stacked
devices.
8.3.2.12.1 ADRSEL Pin
Only the loop controller device (U1) needs a resistor divider at the ADRSEL pin. In this example, the ADRSEL
pin is left floating. This sets the PMBus loop follower address to the EEPROM value, 0x24h (36d) by default, and
the SYNC pin to auto detect with 0 degrees phase shift. Use 表 7-14 and 表 7-15 to select the resistor to AGND
code and resistor divider code needed for the desired configuration.
8.3.2.13 SYNC Pin
The SYNC pins of stacked devices must be connected together. Loop follower devices are always configured for
SYNC_IN while the loop controller device (U1) can be configured for auto-detect, SYNC_IN or SYNC_OUT.
8.3.2.14 VOSNS Pin of Loop Follower Devices
The VOSNS pin of loop follower devices can be used to monitor voltages other than VOUT through the
READ_VOUT command. A resistor divider must be used to scale to voltage at VOSNS to be less than 0.75 V.
The appropriate phase must be selected using the PHASE command.
8.3.2.15 Unused Pins of Loop Follower Devices
Multiple pins of loop follower devices are not used and TI recommends grounding to the thermal pad. See 表7-5
for more information.
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8.3.3 Application Curves
100
90
80
70
60
50
40
30
20
10
0
12
11
10
9
8
7
6
5
4
3
2
PVIN = 5 V
PVIN = 12 V
PVIN = 16 V
PVIN = 5 V
PVIN = 12 V
PVIN = 16 V
1
0
0
5
10
15
20
25
30
35
40
45
50
0
5
10
15
20
25
30
35
40
45
50
Output Current (A)
Output Current (A)
VOUT = 1.8 V
fSW = 550 kHz
VOUT = 1.8 V
fSW = 550 kHz
图8-17. Efficiency vs Output Current
图8-18. Power Dissipation vs Output Current
1.804
1.8035
1.803
1.8025
1.802
1.8015
1.801
1.8005
1.8
1.804
1.8035
1.803
1.8025
1.802
1.8015
1.801
IOUT = 0 A
IOUT = 25 A
IOUT = 50 A
1.8005
1.8
PVIN = 5 V
PVIN = 12 V
PVIN = 16 V
5
6
7
8
9
10
11
12
13
14
15
16
0
5
10
15
20
25
30
35
40
45
50
Input Voltage (V)
Output Current (A)
VOUT = 1.8 V
fSW = 550 kHz
VOUT = 1.8 V
fSW = 550 kHz
图8-20. Line Regulation
图8-19. Load Regulation
VIN = 12 V
VOUT = 1.8 V
IOUT = 0 A
VIN = 12 V
VOUT = 1.8 V
IOUT = 0 A
fSW = 550 kHz
fSW = 550 kHz
图8-21. Start-Up from EN/UVLO
图8-22. Shutdown from CNTL
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VIN = 12 V
VOUT = 1.8 V
IOUT = 12.5 A to 25 A, 1
A/µs
VIN = 12 V
VOUT = 1.8 V
IOUT = 50 A
图8-24. VOUT Steady-State Ripple
图8-23. Load Transient Response
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8.4 Power Supply Recommendations
The TPSM8D6B24 is designed to operate from split input voltage supplies. AVIN is designed to operate from
2.95 V to 18 V. AVIN must be powered to enable POR, PMBus communication, or output conversion. For AVIN
voltages less than 4 V, VDD5 must be supplied with an input voltage greater than 4 V to enable switching. PVIN
is designed to operate from 2.95 V to 16 V. PVIN must be powered to enable switching, but not for POR or
PMBus communication. The TPSM8D6B24 can be operated from a single 4-V or higher supply voltage by
connecting AVIN to PVIN. TI recommends a 10-Ωresistor between AVIN and PVIN to reduce switching noise on
AVIN. See the recommendations in 节8.5.
8.5 Layout
8.5.1 Layout Guidelines
Layout is critical for good power-supply design. 节 8.5.2 shows the recommended PCB-layout configuration. A
list of PCB layout considerations using these devices is listed as follows:
• As with any switching regulator, several power or signal paths exist that conduct fast switching voltages or
currents. Minimize the loop area formed by these paths and their bypass connections.
• Bypass the PVIN pins to PGND with a low-impedance path. Place the input bypass capacitors of the power-
stage as close as physically possible to the PVIN and PGND pins. A high-frequency bypass capacitor is
integrated to reduce switching spikes and EMI. Additional EMI bypass capacitor can be placed on the other
side of the PCB directly underneath the device to keep a minimum loop.
• The AVIN bypass capacitor should be placed close to the AVIN pin and provide a low-impedance path to
PGND at the thermal pad.
• Keep signal components local to the device, and place them as close as possible to the pins to which they
are connected. These components include the VOSNS and GOSNS series resistors and differential filter
capacitor as well as MSEL1, MSEL2, VSEL, and ADRSEL resistors. Those components can be terminated to
AGND with a minimum return loop or bypassed to the copper area of a separate low-impedance analog
ground (AGND) that is isolated from fast switching voltages and current paths and has single connection to
PGND on the thermal pad through the AGND pin. For placement recommendations, see 节8.5.2.
• The PGND pins must be directly connected to the thermal pad of the device on the PCB, with a low-noise,
low-impedance path.
• Route the VOSNS and GOSNS lines from the output capacitor bank at the load back to the device pins as a
tightly coupled differential pair. These traces must be kept away from switching or noisy areas which can add
differential-mode noise.
• Use caution when routing of the SYNC, VSHARE, BCX_CLK, and BCX_DAT traces for stackable
configurations. The SYNC trace carries a rail-to-rail signal and should be routed away from sensitive analog
signals, including the VSHARE, VOSNS, and GOSNS signals. The VSHARE traces must also be kept away
from fast switching voltages or currents formed by the PVIN, AVIN, SW, and VDD5 pins.
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8.5.2 Layout Example
图8-26. Bottom-Layer Components (Top View)
图8-25. Top-Layer Components (Top View)
图8-28. Bottom-Layer Layout (Top View)
图8-27. Top-Layer Layout (Top View)
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8.5.2.1 Thermal Performance on the TI EVM
Test conditions: fSW = 550 kHz, VIN = 12 V, VOUTA = 1 V, VOUTB = 1.0 V, IOUTA = IOUTB = 25 A, Airflow = 0LFM,
Peak module temp: 80°C
图8-29. Thermal Image at 25°C Ambient, 12 VIN, Dual 1.0 VOUT, 25 A, 550 kHz
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9 Device and Documentation Support
9.1 Device Support
9.1.1 第三方产品免责声明
TI 发布的与第三方产品或服务有关的信息,不能构成与此类产品或服务或保修的适用性有关的认可,不能构成此
类产品或服务单独或与任何TI 产品或服务一起的表示或认可。
9.1.2 Development Support
9.1.2.1 Texas Instruments Fusion Digital Power Designer
The is supported by Texas Instruments Digital Power Designer. Fusion Digital Power Designer is a graphical
user interface (GUI) which can be used to configure and monitor the devices via PMBus using a Texas
Instruments USB-to-GPIO adapter.
Click this link to download the Texas Instruments Fusion Digital Power Designer software package.
9.1.2.2 Custom Design With WEBENCH® Tools
Click here to create a custom design using the TPS546B24A device with the WEBENCH® Power Designer.
1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements.
2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial.
3. Compare the generated design with other possible solutions from Texas Instruments.
The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time
pricing and component availability.
In most cases, these actions are available:
• Run electrical simulations to see important waveforms and circuit performance
• Run thermal simulations to understand board thermal performance
• Export customized schematic and layout into popular CAD formats
• Print PDF reports for the design, and share the design with colleagues
Get more information about WEBENCH tools at www.ti.com/WEBENCH.
9.2 接收文档更新通知
要接收文档更新通知,请导航至 ti.com 上的器件产品文件夹。点击订阅更新 进行注册,即可每周接收产品信息更
改摘要。有关更改的详细信息,请查看任何已修订文档中包含的修订历史记录。
9.3 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料,可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范,并且不一定反映 TI 的观点;请参阅
TI 的《使用条款》。
9.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
PMBus® is a registered trademark of System Management Interface Forum, Inc..
WEBENCH® is a registered trademark of Texas Instruments.
所有商标均为其各自所有者的财产。
9.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
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9.6 术语表
TI 术语表
本术语表列出并解释了术语、首字母缩略词和定义。
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10 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. These data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OUTLINE
QFM - 4.4 mm max height
MOW0059A
QUAD FLAT MODULE
20.15
19.85
A
B
PIN 1 INDEX AREA
0.2
0.0
TYP
4X 4X
16.15
(2.41) (3.18) 15.85
ROUTING TABS MAY
BE PRESENT.
CENTERED 4 PLACES
4.4
4.0
C
SEATING PLANE
1.1
0.9
0.1
C
(0.25) TYP
2X (1)
17
30
14X 7.05
2X 5.2
55
1.3
2X
1.1
2.1
1.9
56
3X
54
2X (0.6)
SEE DETAIL A
57
DETAIL A
4 PLACES
SCALE: 6X
2X 3.125
28X 0.8
2X 0.4
53
1.25
1.15
4X
58
2.45
0.000 PKG !
4X
2.35
6.05
5.95
4X
0.45
37X
0.35
0.1
C
A
C
B
52
2.05
1.95
0.05
C
4X
2X 3.7
59
PIN 1 ID
(OPTIONAL)
2.9
2.7
1.8
1.6
5X
21X
0.1
A
B
0.05
C
7X 7.05
1
46
(0.1) TYP
(0.1) TYP
1.3
1.1
1.8
1.6
30X
4X
4226837/A 07/2021
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pads must be soldered to the printed circuit board for optimal thermal and mechanical performance.
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EXAMPLE BOARD LAYOUT
QFM - 4.4 mm max height
MOW0059A
QUAD FLAT MODULE
5X
(2.8)
(R0.05) TYP
46
1
7X (1.75)
7X (7.075)
SOLDER MASK
OPENING
(4 PLACES)
(Ø0.2) TYP
59
52
4X (2.0)
2X (3.7)
METAL UNDER
SOLDER MASK
(4 PLACES)
4X (6.0)
4X (1.2)
58
2X ( 0.7)
53
2X (0.5)
2X (1)
0.000 PKG !
2X (0.4)
2X (0.65)
4X (2.4)
57
28X (0.8)
54
2X (3.125)
37X (0.4)
55
56
2X (5.1)
2X (5.2)
2X (6.1)
14X (1.75)
14X (7.075)
30
17
30X (1.25)
4X (1.75)
TOP LAYER COPPER
KEEP-OUT AREA
4 PLACES
2X
(1.2)
3X (2.0)
0.05 MIN.
ALL AROUND
0.05 MAX.
ALL AROUND
METAL LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE: 6X
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
SOLDER MASK
DEFINED
USED ON PADS 52, 54, 57 & 59
SOLDER MASK
OPENING
EXPOSED METAL
EXPOSED METAL
NON- SOLDER MASK
DEFINED
(PREFERRED)
FOR ALL PADS UNLESS
SPECIFIED
SOLDER MASK DETAILS
4226837/A 07/2021
NOTES: (continued)
4. This package is designed to be soldered to thermal pads on the board. For more information, refer to QFN/SON PCB application
note in literature No. SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on the application, refer to device data sheet. If any vias are implemented, refer to their locations
shown on this view. It is recommended that vias under paste be filled, plugged or tented.
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EXAMPLE BOARD LAYOUT
QFM - 4.4 mm max height
MOW0059A
QUAD FLAT MODULE
(Ø0.2) TYP
7X (7.7)
19X (7.075)
7X (6.45)
46
1
6X (4.45)
10X (3.7)
6X (2.95)
59
52
0.000 PKG !
58
53
6X (2.375)
10X (3.125)
6X (3.875)
57
54
55
56
6X (5.2)
5X (6.45)
17X (7.075)
5X (7.7)
17
30
LAND PATTERN EXAMPLE
VIA POSITION
SCALE: 6X
4226837/A 07/2021
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EXAMPLE STENCIL DESIGN
QFM - 4.4 mm max height
MOW0059A
QUAD FLAT MODULE
14X (7.55)
14X (6.6)
(R0.05) TYP
SOLDER MASK
OPENING
20X
(1.25)
(4 PLACES)
8X (4.225)
8X (3.175)
METAL UNDER
SOLDER MASK
(4 PLACES)
16X
(1.45)
8X (1.0)
8X (1.1)
0.000 PKG !
4X (0.4)
28X (0.8)
16X
(1.175)
32X (0.85)
8X (2.6)
37X (0.35)
8X (3.65)
4X (5.2)
4X (1.15)
8X (6.6)
8X (7.55)
52X (0.75)
16X (0.75)
30X (1.2)
12X (0.875)
12X (0.875)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
75% SOLDER COVERAGE ON PAD 52, 54, 57 & 59
SCALE: 6X
4226837/A 07/2021
NOTES: (continued)
6.
7.
Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
Board assembly site may have different recommendations for stencil designs
www.ti.com
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Product Folder Links: TPSM8D6B24
PACKAGE OPTION ADDENDUM
www.ti.com
10-Sep-2022
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TPSM8D6B24MOWR
ACTIVE
QFM
MOW
59
500
RoHS & Green
NIAU
Level-3-260C-168 HR
-40 to 125
TPSM8D6B24
MOW
Samples
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
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