TPS22958DGNR
更新时间:2024-09-19 05:37:59
品牌:TI
描述:具有可调节上升时间和可选输出放电功能的 5.5V、6A、13mΩ 负载开关 | DGN | 8 | -40 to 105
TPS22958DGNR 概述
具有可调节上升时间和可选输出放电功能的 5.5V、6A、13mΩ 负载开关 | DGN | 8 | -40 to 105 电源管理电路
TPS22958DGNR 规格参数
是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | HTSSOP, |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 1.64 | 可调阈值: | NO |
模拟集成电路 - 其他类型: | POWER SUPPLY SUPPORT CIRCUIT | JESD-30 代码: | S-PDSO-G8 |
长度: | 3 mm | 湿度敏感等级: | 1 |
信道数量: | 1 | 功能数量: | 1 |
端子数量: | 8 | 最高工作温度: | 105 °C |
最低工作温度: | -40 °C | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | HTSSOP | 封装形状: | SQUARE |
封装形式: | SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH | 座面最大高度: | 1.1 mm |
最大供电电流 (Isup): | 0.017 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 2.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 温度等级: | INDUSTRIAL |
端子形式: | GULL WING | 端子节距: | 0.65 mm |
端子位置: | DUAL | 宽度: | 3 mm |
Base Number Matches: | 1 |
TPS22958DGNR 数据手册
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TPS22958, TPS22958N
ZHCSDJ0A –FEBRUARY 2015–REVISED MARCH 2015
TPS22958x 具有可调节上升时间的 5.5V、4A/6A、14mΩ 负载开关
1 特性
2 应用
1
•
集成 N 通道负载开关
输入电压范围:0.6V 至 5.5V
VBIAS 电压范围:2.5V 至 5.5V
RON 电阻
•
•
•
•
•
电子销售点 (EPOS)
•
•
•
工厂自动化/控制
楼宇自动化
打印机
波峰焊制造
–
–
–
VIN = 5V (VBIAS = 5V) 时,RON = 14mΩ
VIN = 3.3V (VBIAS = 5V) 时,RON = 13mΩ
VIN = 1.8V (VBIAS = 5V) 时,RON = 13mΩ
3 说明
TPS22958x 是一款具有可调节上升时间的小型单通道
负载开关。 此器件包含一个可在 0.6V 至 5.5V 输入电
压范围内运行的 N 通道 MOSFET,并且可支持最大
4A(DGK 封装)或 6A(DGN 封装)的持续电流。
此开关可由一个打开/关闭输入控制,此输入可与低压
控制信号直接对接。
•
•
•
4A 最大持续开关电流(DGK 封装)
6A 最大持续开关电流(DGN 封装)
低静态电流
–
VBIAS = 5V 时为 55µA
•
低控制输入阈值支持使用
1.2V/1.8V/2.5V/3.3V 逻辑电路
可调节上升时间(1)
快速输出放电 (QOD)(2)
•
•
•
该器件的上升时间可从外部进行控制,从而避免涌入电
流。 在 CT 引脚上连接一个电容即可更改上升时间:
电容值越大,上升时间越长。 TPS22958x 提供 DGK
和 DGN 两种节省空间的封装,其中 DGN 封装带有支
持高功率耗散的散热焊盘,而 DGN 封装则不带有散热
焊盘。 器件在自然通风环境下的额定运行温度范围为 -
40℃ 至 105℃。
DGK 8 引脚封装:
–
3.0mm x 4.9mm x 1.1mm,0.65mm 间距
带有散热焊盘的 DGK 8 引脚封装:
3.0mm x 4.9mm x 1.1mm,0.65mm 间距
•
•
–
静电放电 (ESD) 性能经测试符合 JEDEC STD 标
准。
器件信息(1)
–
2kV 人体模型 (HBM) 和 1kV 器件充电模型
器件编号
TPS22958x
封装(引脚)
DGK (8)
DGN (8)
封装尺寸(标称值)
3.00mm x 4.90mm
3.00mm x 4.90mm
(CDM)
•
闩锁性能超出 100mA,符合 JESD 78 II 类规范的
要求
•
通用输入输出 (GPIO) 使能 - 高电平有效
(1) 要了解所有可用封装,请见数据表末尾的可订购产品附录。
(1)
有关 CT 值与上升时间的关系,请参见Adjustable Rise Time
部分
(2)
TPS22958N 器件不具备该特性。
典型应用电路原理图
1
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
English Data Sheet: SLVSCX7
TPS22958, TPS22958N
ZHCSDJ0A –FEBRUARY 2015–REVISED MARCH 2015
www.ti.com.cn
目录
1
2
3
4
5
6
7
特性.......................................................................... 1
应用.......................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 2
Device Comparison Table..................................... 3
Pin Configuration and Functions......................... 3
Specifications......................................................... 4
7.1 Absolute Maximum Ratings ...................................... 4
7.2 ESD Ratings ............................................................ 4
7.3 Recommended Operating Conditions....................... 4
7.4 Thermal Information.................................................. 5
7.5 Electrical Characteristics (VBIAS = 5 V)..................... 6
7.6 Electrical Characteristics (VBIAS = 3.3 V).................. 7
7.7 Electrical Characteristics (VBIAS = 2.5 V).................. 8
7.8 Switching Characteristics.......................................... 9
7.9 Typical DC Characteristics...................................... 10
7.10 Typical AC Characteristics.................................... 13
Parameter Measurement Information ................ 16
9
Detailed Description ............................................ 17
9.1 Overview ................................................................. 17
9.2 Functional Block Diagram ....................................... 17
9.3 Feature Description................................................. 17
9.4 Device Functional Modes........................................ 19
10 Application and Implementation........................ 20
10.1 Application Information.......................................... 20
10.2 Typical Application ................................................ 21
11 Power Supply Recommendations ..................... 24
12 Layout................................................................... 24
12.1 Layout Guidelines ................................................. 24
12.2 Layout Example .................................................... 25
13 器件和文档支持 ..................................................... 26
13.1 相关链接................................................................ 26
13.2 商标....................................................................... 26
13.3 静电放电警告......................................................... 26
13.4 术语表 ................................................................... 26
14 机械封装和可订购信息 .......................................... 26
8
4 修订历史记录
Changes from Original (January 2014) to Revision A
Page
•
完整版的最初发布版本。 ....................................................................................................................................................... 1
2
Copyright © 2015, Texas Instruments Incorporated
TPS22958, TPS22958N
www.ti.com.cn
ZHCSDJ0A –FEBRUARY 2015–REVISED MARCH 2015
5 Device Comparison Table
RON AT
DEVICE
QUICK OUTPUT
DISCHARGE
MAX OUTPUT
CURRENT
RISE TIME
ENABLE
VIN = VBIAS = 5V
TPS22958DGK
Adjustable
Adjustable
Adjustable
Adjustable
Yes
Yes
No
4 A
6 A
4 A
6 A
TPS22958DGN
14 mΩ
Active High
TPS22958NDGK
TPS22958NDGN
No
6 Pin Configuration and Functions
PACKAGE (TOP VIEW)
VIN
ON
1
2
3
4
8
7
6
5
VOUT
CT
VIN
ON
1
2
3
4
8
7
6
5
VOUT
CT
VBIAS
VIN
GND
VOUT
VBIAS
VIN
GND
VOUT
DGK Package
DGN Package
Pin Functions
PIN
I/O
DESCRIPTION
NO.
1, 4
2
NAME
Switch input. Bypass this input with a ceramic capacitor to GND. These pins should be tied together as
shown in Layout Information.
VIN
I
I
I
ON
Active-high switch control input. Do not leave floating.
Bias voltage. Power supply to the device. Recommended voltage range for this pin is 2.5 to 5.5 V. See
VIN and VBIAS Voltage Range .
3
VBIAS
5, 8
6
VOUT
GND
CT
O
—
O
Switch output
Ground
7
Switch slew rate control. Can be left floating.
Thermal
Pad(1)
Thermal pad (exposed center pad) to alleviate thermal stress. Tie to GND. See Layout Guidelines for
layout guidelines.
—
—
(1) Only available for the DGN package
Copyright © 2015, Texas Instruments Incorporated
3
TPS22958, TPS22958N
ZHCSDJ0A –FEBRUARY 2015–REVISED MARCH 2015
www.ti.com.cn
7 Specifications
7.1 Absolute Maximum Ratings
Over operating free-air temperature (unless otherwise noted)(1)
(2)
MIN
–0.3
MAX
UNIT
V
VIN
Input voltage
Bias voltage
Output voltage
ON voltage
6
6
VBIAS
VOUT
VON
–0.3
–0.3
–0.3
V
6
V
6
V
Maximum continuous switch current, TA = 65°C (DGK Package)
Maximum continuous switch current, TA = 75°C (DGN Package)
Maximum pulsed switch current, pulse <300 µs, 2% duty cycle (DGK Package)
Maximum pulsed switch current, pulse <300 µs, 2% duty cycle (DGN Package)
Maximum junction temperature
4
A
IMAX
6
A
6
A
IPLS
8
A
TJ
125
°C
°C
Tstg
Storage temperature range
–65
150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
7.2 ESD Ratings
VALUE
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V(ESD)
Electrostatic discharge
V
Charged-device model (CDM), per JEDEC specification JESD22-
C101(2)
±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 500-V HBM is possible with the necessary precautions.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 250-V CDM is possible with the necessary precautions.
7.3 Recommended Operating Conditions
MIN
0.6
2.5
0
MAX
VBIAS
5.5
UNIT
V
VIN
Input voltage range
VBIAS
VON
Bias voltage range
V
ON voltage range
5.5
V
VOUT
VIH, ON
VIL, ON
TA
Output voltage range
High-level input voltage, ON
Low-level input voltage, ON
Operating free-air temperature
Input capacitor
VIN
V
VBIAS = 2.5 to 5.5 V
VBIAS = 2.5 to 5.5 V
1.2
0
5.5
V
0.5
V
(1)
–40
1(2)
105
°C
µF
CIN
(1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
have to be derated. Maximum ambient temperature [TA(max)] is dependent on the maximum operating junction temperature [TJ(max)], the
maximum power dissipation of the device in the application [PD(max)], and the junction-to-ambient thermal resistance of the part/package
in the application (RθJA), as given by the following equation: TA(max) = TJ(max) – (RθJA × PD(max)).
(2) Refer to the Application Information section.
4
Copyright © 2015, Texas Instruments Incorporated
TPS22958, TPS22958N
www.ti.com.cn
ZHCSDJ0A –FEBRUARY 2015–REVISED MARCH 2015
7.4 Thermal Information
TPS22958x
UNIT
THERMAL METRIC(1) (2)
DGK
DGN
(8 PINS)
(8 PINS)
RθJA
Junction-to-ambient thermal resistance
185.7
77.3
107.0
15.2
105.4
n/a
67.0
66.5
46.8
5.0
RθJC(top) Junction-to-case (top) thermal resistance
RθJB
ψJT
Junction-to-board thermal resistance
°C/W
Junction-to-top characterization parameter
Junction-to-board characterization parameter
ψJB
46.6
14.9
RθJC(bot) Junction-to-case (bottom) thermal resistance
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) For thermal estimates of this device based on PCB copper area, see the TI PCB Thermal Calculator.
Copyright © 2015, Texas Instruments Incorporated
5
TPS22958, TPS22958N
ZHCSDJ0A –FEBRUARY 2015–REVISED MARCH 2015
www.ti.com.cn
7.5 Electrical Characteristics (VBIAS = 5 V)
Unless otherwise noted, the specification in the following table applies over the operating ambient temperature
–40°C ≤ TA ≤ 105°C and VBIAS = 5 V. Typical values are for TA = 25°C (unless otherwise noted).
PARAMETER
TEST CONDITIONS
TA
MIN
TYP MAX UNIT
POWER SUPPLIES AND CURRENTS
-40°C to 85°C
-40°C to 105°C
-40°C to 85°C
-40°C to 105°C
-40°C to 85°C
-40°C to 105°C
-40°C to 85°C
-40°C to 105°C
-40°C to 85°C
-40°C to 105°C
-40°C to 85°C
-40°C to 105°C
-40°C to 85°C
-40°C to 105°C
-40°C to 105°C
54
0.5
60
60
1
IQ, VBIAS
VBIAS quiescent current
VBIAS shutdown current
IOUT = 0, VIN = VON = VBIAS = 5 V
VON = 0 V, VOUT = 0 V, VBIAS = 5 V
µA
µA
ISD, VBIAS
1
0.5
8
VIN = 5 V
10
3
0.1
VIN = 3.3 V
VIN = 1.8 V
VIN= 1.2 V
VIN = 0.6 V
4
0.07
0.05
0.04
2
ISD, VIN
VIN shutdown current
VON = 0 V, VOUT = 0 V, VBIAS = 5 V
µA
µA
3
1
2
1
2
ION
ON pin input leakage current
VON = 5.5 V, VBIAS = 5 V
0.1
RESISTANCE CHARACTERISTICS
25°C
14
13
18
VIN = 5 V
-40°C to 85°C
-40°C to 105°C
25°C
20 mΩ
24
17
VIN = 3.3 V
VIN = 2.5 V
VIN = 1.8 V
VIN = 1.5 V
VIN = 1.2 V
VIN = 0.6 V
-40°C to 85°C
-40°C to 105°C
25°C
20 mΩ
23
13
17
-40°C to 85°C
-40°C to 105°C
25°C
20 mΩ
23
13
17
RON
ON-state resistance
IOUT = –200 mA, VBIAS = 5 V
-40°C to 85°C
-40°C to 105°C
25°C
20 mΩ
23
13
17
-40°C to 85°C
-40°C to 105°C
25°C
20 mΩ
23
13
17
-40°C to 85°C
-40°C to 105°C
25°C
20 mΩ
23
13
17
-40°C to 85°C
-40°C to 105°C
-40°C to 105°C
20 mΩ
23
RPD
Output pulldown resistance
VIN = VBIAS = 5 V, VON = 0 V, IOUT = 10 mA
135
160
Ω
6
Copyright © 2015, Texas Instruments Incorporated
TPS22958, TPS22958N
www.ti.com.cn
ZHCSDJ0A –FEBRUARY 2015–REVISED MARCH 2015
7.6 Electrical Characteristics (VBIAS = 3.3 V)
Unless otherwise noted, the specification in the following table applies over the operating ambient temperature
–40°C ≤ TA ≤ 105°C and VBIAS = 3.3 V. Typical values are for TA = 25°C (unless otherwise noted).
PARAMETER
TEST CONDITIONS
TA
MIN
TYP MAX UNIT
POWER SUPPLIES AND CURRENTS
-40°C to 85°C
-40°C to 105°C
-40°C to 85°C
-40°C to 105°C
-40°C to 85°C
-40°C to 105°C
-40°C to 85°C
-40°C to 105°C
-40°C to 85°C
-40°C to 105°C
-40°C to 85°C
-40°C to 105°C
-40°C to 105°C
23
0.3
27
27
0.7
0.7
3
IQ, VBIAS
VBIAS quiescent current
VBIAS shutdown current
IOUT = 0, VIN = VON = VBIAS = 3.3 V
VON = 0 V, VOUT = 0 V, VBIAS = 3.3 V
µA
µA
ISD, VBIAS
0.1
VIN = 3.3 V
VIN = 1.8 V
VIN= 1.2 V
VIN = 0.6 V
4
0.07
0.05
0.04
2
3
ISD, VIN
VIN shutdown current
VON = 0 V, VOUT = 0 V, VBIAS = 3.3 V
µA
µA
1
2
1
2
ION
ON pin input leakage current
VON = 5.5 V, VBIAS = 3.3 V
0.1
RESISTANCE CHARACTERISTICS
25°C
14
13
18
VIN = 3.3 V
VIN = 2.5 V
VIN = 1.8 V
VIN = 1.5 V
VIN = 1.2 V
VIN = 0.6 V
-40°C to 85°C
-40°C to 105°C
25°C
20 mΩ
24
17
-40°C to 85°C
-40°C to 105°C
25°C
20 mΩ
23
13
17
-40°C to 85°C
-40°C to 105°C
25°C
20 mΩ
23
RON
ON-state resistance
IOUT = –200 mA, VBIAS = 3.3 V
13
17
-40°C to 85°C
-40°C to 105°C
25°C
20 mΩ
23
13
17
-40°C to 85°C
-40°C to 105°C
25°C
20 mΩ
23
13
17
-40°C to 85°C
-40°C to 105°C
-40°C to 105°C
20 mΩ
23
RPD
Output pulldown resistance
VIN = VBIAS = 3.3 V, VON = 0 V, IOUT = 10 mA
135
160
Ω
Copyright © 2015, Texas Instruments Incorporated
7
TPS22958, TPS22958N
ZHCSDJ0A –FEBRUARY 2015–REVISED MARCH 2015
www.ti.com.cn
7.7 Electrical Characteristics (VBIAS = 2.5 V)
Unless otherwise noted, the specification in the following table applies over the operating ambient temperature
–40 °C ≤ TA ≤ 105 °C and VBIAS = 2.5 V. Typical values are for TA = 25°C (unless otherwise noted).
PARAMETER
TEST CONDITIONS
TA
MIN
TYP MAX UNIT
POWER SUPPLIES AND CURRENTS
-40°C to 85°C
-40°C to 105°C
-40°C to 85°C
-40°C to 105°C
-40°C to 85°C
-40°C to 105°C
-40°C to 85°C
-40°C to 105°C
-40°C to 85°C
-40°C to 105°C
-40°C to 85°C
-40°C to 105°C
-40°C to 105°C
14
0.2
17
17
0.5
0.5
3
IQ, VBIAS
VBIAS quiescent current
VBIAS shutdown current
IOUT = 0, VIN = VON = VBIAS = 2.5 V
VON = 0 V, VOUT = 0 V, VBIAS = 2.5 V
µA
µA
ISD, VBIAS
0.1
VIN = 2.5 V
VIN = 1.8 V
VIN = 1.2 V
VIN = 0.6 V
4
0.07
0.05
0.04
2
3
ISD, VIN
VIN shutdown current (per channel)
ON pin input leakage current
VON = 0 V, VOUT = 0 V, VBIAS = 2.5 V
µA
µA
1
2
1
2
ION
VON = 5.5 V, VBIAS = 2.5 V
0.1
RESISTANCE CHARACTERISTICS
25°C
15
14
19
VIN = 2.5 V
VIN = 1.8 V
VIN = 1.5 V
VIN = 1.2 V
VIN = 0.6 V
-40°C to 85°C
-40°C to 105°C
25°C
23 mΩ
26
18
-40°C to 85°C
-40°C to 105°C
25°C
22 mΩ
25
14
18
RON
ON-state resistance
IOUT = –200 mA, VBIAS = 2.5 V
-40°C to 85°C
-40°C to 105°C
25°C
22 mΩ
25
14
18
-40°C to 85°C
-40°C to 105°C
25°C
22 mΩ
25
13
18
-40°C to 85°C
-40°C to 105°C
-40°C to 105°C
22 mΩ
25
RPD
Output pulldown resistance
VIN = VBIAS = 2.5 V, VON = 0 V, IOUT = 10 mA
135
160
Ω
8
Copyright © 2015, Texas Instruments Incorporated
TPS22958, TPS22958N
www.ti.com.cn
ZHCSDJ0A –FEBRUARY 2015–REVISED MARCH 2015
7.8 Switching Characteristics
PARAMETER
TEST CONDITION
MIN
TYP
MAX UNIT
VIN = VON = VBIAS = 5 V, TA = 25 °C
tON
tOFF
tR
Turn-on time
Turn-off time
VOUT rise time
VOUT fall time
ON delay time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
646
5
769
2
µs
tF
tD
280
VIN = 0.6 V, VON = VBIAS = 5 V, TA = 25 ºC
tON
tOFF
tR
Turn-on time
Turn-off time
VOUT rise time
VOUT fall time
ON delay time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
303
91
126
7
µs
µs
µs
tF
tD
243
VIN = 2.5 V, VON = 5 V, VBIAS = 2.5V, TA = 25 ºC
tON
tOFF
tR
Turn-on time
Turn-off time
VOUT rise time
VOUT fall time
ON delay time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
983
7
987
2
tF
tD
518
VIN = 0.6 V, VON = 5 V, VBIAS = 2.5 V, TA = 25 ºC
tON
tOFF
tR
Turn-on time
Turn-off time
VOUT rise time
VOUT fall time
ON delay time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF
611
77
305
7
tF
tD
468
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7.9 Typical DC Characteristics
80
70
60
50
40
30
20
10
65
63
61
59
57
55
53
51
49
47
45
-40°C
25°C
85°C
105°C
-40°C
25°C
85°C
105°C
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VBIAS (V)
VIN (V)
D001
D002
VIN = VBIAS
VOUT = Open
VON = 5 V
VBIAS = 5 V
VON = 5 V
VOUT = Open
Figure 1. Quiescent Current vs VBIAS
Figure 2. Quiescent Current vs VIN
1.0
1.0
0.8
0.6
0.4
0.2
0.0
-40°C
25°C
85°C
-40°C
25°C
85°C
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
105°C
105°C
-0.2
0.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
1.0
2.0
3.0
4.0
5.0
6.0
VBIAS (V)
VIN (V)
D003
D004
VIN = VBIAS
VOUT = 0 V
VON = 0 V
VBIAS = 5 V
VOUT = 0 V
VON = 0 V
Figure 3. Shutdown Current vs VBIAS
Figure 4. VIN Shutdown Current vs VIN
20
18
16
14
12
10
8
20
18
16
14
12
10
8
6
6
4
4
VIN = 0.6V
VIN = 0.6V
VIN = 1.8V
VIN = 2.5V
VIN = 3.3V
VIN = 5V
2
2
0
0
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
Ambient Temperature (qC)
Ambient Temperature (qC)
D005
D006
VBIAS = 2.5 V
VON = 5 V
IOUT = –200 mA
VBIAS = 5 V
VON = 5 V
IOUT = –200 mA
Figure 5. RON vs Temperature
Figure 6. RON vs Temperature
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Typical DC Characteristics (continued)
20
25
23
21
19
17
15
13
11
9
VIN = 0.6V
VIN = 3.3V
VIN = 5V
-40°C
19
18
17
16
15
14
13
12
11
10
25°C
85°C
105°C
7
5
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
IOUT (A)
VIN (V)
D007
D008
VBIAS = 5 V
VON = 5 V
TA = 25°C
VBIAS = 2.5 V
VON = 5V
IOUT = –200 mA
Figure 7. RON vs IOUT (DGN Package)
Figure 8. RON vs VIN
25
16.0
15.5
15.0
14.5
14.0
13.5
13.0
12.5
12.0
-40°C
25°C
85°C
VBIAS = 2.5V
VBIAS = 3.3V
VBIAS = 5V
23
21
19
17
15
13
11
9
105°C
VBIAS = 5.5V
7
5
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VIN (V)
VIN (V)
D009
D012
VBIAS = 5 V
VON = 5 V
IOUT = –200 mA
TA = 25°C
VON = 5 V
IOUT = –200 mA
Figure 9. RON vs VIN
Figure 10. RON vs VIN
16.0
15.5
15.0
14.5
14.0
13.5
13.0
12.5
150
148
146
144
142
140
138
136
134
132
VIN = 0.6V
VIN = 1.8V
VIN = 2.5V
VIN = 3.3V
-40°C
25°C
85°C
105°C
12.0
2.5
130
2.5
3.0
3.5
4.0
4.5
5.0
5.5
3.0
3.5
4.0
4.5
5.0
5.5
VBIAS (V)
VBIAS (V)
D013
D014
TA = 25°C
VON = 5 V
IOUT = –200 mA
VIN = 1.8 V
IOUT = 10 mA
VON = 0 V
Figure 11. RON vs VBIAS
Figure 12. RPD vs VBIAS
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Typical DC Characteristics (continued)
2.5
2.0
1.5
1.0
0.5
0.0
VBIAS = 2.5V
VBIAS = 3.3V
VBIAS = 5V
VBIAS = 5.5V
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
VON (V)
D015
TA = 25°C
VIN = 2 V
Figure 13. VOUT vs VON
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7.10 Typical AC Characteristics
CIN = 1 µF, CL = 0.1 µF, RL = 10 Ω (unless otherwise specified)
700
600
500
400
300
200
100
350
325
300
275
250
225
200
175
150
125
100
-40qC
25qC
85qC
105qC
-40qC
25qC
85qC
105qC
0.0
0.5
1.0
1.5
VIN (V)
2.0
2.5
2.5
2.5
3.0
0.0
1.0
2.0
3.0
VIN (V)
4.0
5.0
5.0
5.0
6.0
D016
D017
VBIAS = 2.5 V
CT= 1000 pF
Figure 14. tD vs VIN
VBIAS = 5 V
CT = 1000 pF
Figure 15. tD vs VIN
20
20
18
16
14
12
10
8
-40qC
25qC
85qC
105qC
-40qC
25qC
85qC
105qC
18
16
14
12
10
8
6
6
4
4
2
2
0
0.0
0
0.0
0.5
1.0
1.5
VIN (V)
2.0
3.0
1.0
2.0
3.0
VIN (V)
4.0
6.0
D018
D019
VBIAS = 2.5 V
CT = 1000 pF
Figure 16. tF vs VIN
VBIAS = 5 V
CT = 1000 pF
Figure 17. tF vs VIN
200
200
180
160
140
120
100
80
-40qC
25qC
85qC
-40qC
180
160
140
120
100
80
25qC
85qC
105qC
105qC
60
60
40
40
20
20
0
0.0
0
0.0
0.5
1.0
1.5
2.0
3.0
1.0
2.0
3.0
4.0
6.0
VIN (V)
VIN (V)
D020
D021
VBIAS = 2.5 V
CT = 1000 pF
Figure 18. tOFF vs VIN
VBIAS = 5 V
CT = 1000 pF
Figure 19. tOFF vs VIN
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Typical AC Characteristics (continued)
1200
1100
1000
900
800
700
600
500
400
300
800
700
600
500
400
300
200
100
-40qC
25qC
85qC
105qC
-40qC
25qC
85qC
105qC
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VIN (V)
VIN (V)
D022
D023
VBIAS = 2.5 V
CT = 1000 pF
VBIAS = 5 V
CT = 1000 pF
Figure 21. tON vs VIN
Figure 20. tON vs VIN
1200
900
800
700
600
500
400
300
200
100
0
1100
1000
900
800
700
600
500
400
300
200
100
0
-40qC
25qC
85qC
105qC
-40qC
25qC
85qC
105qC
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VIN (V)
VIN (V)
D024
D025
VBIAS = 2.5 V
CT = 1000 pF
VBIAS = 5 V
CT = 1000 pF
Figure 23. tR vs VIN
Figure 22. tR vs VIN
1200
7000
6000
5000
4000
3000
2000
1000
0
-40°C
25°C
85°C
CT=0pF
1100
1000
900
800
700
600
500
400
300
CT=220pF
CT=470pF
CT=1000pF
CT=2200pF
CT=4700pF
CT=10000pF
105°C
2.5
3.0
3.5
4.0
4.5
5.0
0
1
2
3
4
5
6
VBIAS (V)
VIN (V)
D026
D027
VIN = 2.5 V
CT = 1000 pF
VBIAS = 5 V
TA = 25°C
Figure 24. tR vs VBIAS
Figure 25. tR vs VIN
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Typical AC Characteristics (continued)
VIN = 0.6 V
CIN = 1 µF
VBIAS = 2.5 V
CL = 0.1 µF
CT = 1000 pF
VIN = 0.6 V
CIN = 1 µF
VBIAS = 2.5 V
CL = 0.1 µF
CT = 1000 pF
RL = 10 Ω
RL = 10 Ω
Figure 26. Turn-on Response Time
Figure 27. Turn-on Response Time
VIN = 2.5 V
CIN = 1 µF
VBIAS = 2.5 V
CL = 0.1 µF
CT = 1000 pF
RL = 10 Ω
VIN = 5 V
CIN = 1 µF
VBIAS = 5 V
CL = 0.1 µF
CT = 1000 pF
RL = 10 Ω
Figure 28. Turn-on Response Time
Figure 29. Turn-on Response Time
VIN = 0.6 V
CIN = 1 µF
VBIAS = 2.5 V
CL = 0.1 µF
CT = 1000 pF
VIN = 0.6 V
CIN = 1 µF
VBIAS = 2.5 V
CL = 0.1 µF
CT = 1000 pF
RL = 10 Ω
RL = 10 Ω
Figure 30. Turn-Off Response Time
Figure 31. Turn-off Response Time
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Typical AC Characteristics (continued)
VIN = 2.5 V
CIN = 1 µF
VBIAS = 2.5 V
CL = 0.1 µF
CT = 1000 pF
VIN = 5 V
VBIAS = 5 V
CL = 0.1 µF
CT = 1000 pF
RL = 10 Ω
CIN = 1 µF
RL = 10 Ω
Figure 32. Turn-off Response Time
Figure 33. Turn-on Response Time
8 Parameter Measurement Information
Figure 34. Test Circuit and Timing Waveforms
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9 Detailed Description
9.1 Overview
This device is a 5.5 V, 4 A / 6 A, single channel load switch with an adjustable rise time. The device contains an
N-channel MOSFET controlled by an on/off GPIO-compatible input. The ON pin must be connected and cannot
be left floating. The device is designed to control the turn-on rate and therefore the inrush current. By controlling
the inrush current, power supply sag can be reduced during turn on. The slew rate is set by connecting a
capacitor from the CT pin to GND.
The slew rate is proportional to the capacitor on the CT pin. Refer to the Adjustable Rise Time section to
determine the correct CT value for a desired rise time.
The internal circuitry is powered by the VBIAS pin, which supports voltages from 2.5 to 5.5 V. This circuitry
includes the charge pump, QOD, and control logic. For these internal blocks to function correctly, a voltage
between 2.5 and 5.5 V must be supplied to VBIAS.
When a voltage is supplied to VBIAS and the ON pin goes low, the QOD turns on. This connects VOUT to GND
through an on-chip resistor and is not a feature for the TPS22958N. The typical pull-down resistance (RPD) is 135
Ω.
9.2 Functional Block Diagram
9.3 Feature Description
9.3.1 ON/OFF Control
The ON pin controls the state of the switch. Asserting ON high enables the switch. ON is active high and has a
low threshold, making it capable of interfacing with low-voltage signals. The ON pin is compatible with standard
GPIO logic threshold. It can be used with any microcontroller with 1.2 V or higher GPIO voltage. This pin cannot
be left floating and must be tied either high or low for proper functionality.
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Feature Description (continued)
9.3.2 Quick Output Discharge (QOD)
The TPS22958 includes a QOD feature while the TPS22958N does not. When the device is disabled, a
discharge resistor is connected between VOUT and GND. This resistor has a typical value of 135 Ω and
prevents the output from floating while the switch is disabled.
9.3.3 VIN and VBIAS Voltage Range
For optimal RON performance, make sure VIN ≤ VBIAS. The device will still function if VIN > VBIAS but will exhibit an
RON greater than what is listed in the Electrical Characteristics table. See Figure 35 for an example of a typical
device. RON increases as VIN exceeds the VBIAS voltage. For the maximum voltage ratings on the VIN and VBIAS
pins, please refer to the Absolute Maximum Ratings table.
20
VBIAS = 2.5V
VBIAS = 3.3V
VBIAS = 5V
VBIAS = 5.5V
19
18
17
16
15
14
13
12
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VIN (V)
D028
TA = 25°C
IOUT = -200 mA
VON = 5 V
Figure 35. RON vs VIN
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Feature Description (continued)
9.3.4 Adjustable Rise Time
A capacitor from the CT pin to GND sets the slew rate, and it should be rated for 25 V and above. An
approximate formula for the relationship between CT and slew rate with VBIAS = 5 V is:
SR = 0.146 × CT + 14.78
where
•
•
•
•
SR = slew rate (in µs/V)
CT = the capacitance value on the CT pin (in pF)
The units for the constant 14.78 is µs/V.
The units for the constant 0.146 is µs/(V×pF)
(1)
Rise time can be calculated by multiplying the input voltage by the slew rate. Table 1 contains rise time values
measured on a typical device.
Table 1. Rise Time Table
RISE TIME (µs) 10% - 90%, CL = 0.1 µF, CIN = 1 µF, RL = 10 Ω, VBIAS = 5 V
Typical values at 25°C with a 25-V X7R 10% ceramic capacitor on CT
CTx (pF)
VIN = 5 V VIN = 3.3 V VIN = 1.8 V VIN = 1.5 V VIN = 1.2 V VIN = 0.8 V VIN = 0.6 V
0
79
59
41
97
37
86
33
74
26
55
23
48
220
227
158
470
397
270
160
301
640
1315
2778
139
258
548
1128
2372
116
211
450
927
1950
88
72
1000
2200
4700
10000
769
522
153
315
656
1379
126
256
528
1103
1659
3445
7310
1118
2314
4884
9.4 Device Functional Modes
The following table lists the VOUT pin connections for a particular device as determined by the ON pin.
Table 2. VOUT Functional Table
ON (Control Input)
TPS22958
GND
TPS22958N
Open
L
H
VIN
VIN
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10 Application and Implementation
10.1 Application Information
10.1.1 Input Capacitor (Optional)
To limit the voltage drop on the input supply caused by transient inrush currents when the switch turns on into a
discharged load capacitor, a capacitor can be placed between VIN and GND. A 1 µF ceramic capacitor, CIN,
placed close to the pins, is usually sufficient. Higher values of CIN can be used to further reduce the voltage drop
during high-current application. When switching heavy loads, TI recommends to have an input capacitor about
10× higher than the output capacitor to avoid excessive voltage drop.
10.1.2 Output Capacitor (Optional)
Due to the integrated body diode in the NMOS switch, TI recommends a CIN greater than CL. A CL greater than
CIN can cause the voltage on VOUT to exceed VIN when the system supply is removed. This could result in
current flow through the body diode from VOUT to VIN. TI recommends a CIN to CL ratio of 10 to 1 for minimizing
VIN dip caused by inrush currents during startup.
10.1.3 Power Supply Sequencing Without a GPIO Input
2.5 V to 5.5 V
VBIAS
Li-Ion 1S battery or
DC/DC controller
VIN
VOUT
CIN
COUT1
Module 1
TPS22958x
ON
CT
GND
CT1
2.5 V to 5.5 V
VBIAS
VIN
VOUT
COUT2
Module 2
TPS22958x
ON
CT
GND
CT2
Figure 36. Power Supply Sequencing Without a GPIO Input
In many end equipments, there is a need to power up various modules in a pre-determined manner. The
TPS22958x can solve the problem of power sequencing without adding any complexity to the overall system.
Figure 36 shows the configuration required for powering up two modules in a fixed sequence. The output of the
first load switch is tied to the enable of the second load switch, so when Module 1 is powered the second load
switch is enabled and Module 2 is powered.
20
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10.2 Typical Application
This application demonstrates how the TPS22958 can be used to power a downstream load with a large
capacitance. The example in Figure 37 is powering a 22 µF capacitive output load.
Figure 37. Typical Application Schematic
10.2.1 Design Requirements
For this design example, use the following as the input parameters.
Table 3. Design Parameters
DESIGN PARAMETER
VIN
EXAMPLE VALUE
3.3 V
5.0 V
4 A
VBIAS
Load current
Output capacitance (CL)
Allowable inrush current on VOUT
22 µF
0.33 A
10.2.2 Detailed Design Procedure
To begin the design process, the designer needs to know the following:
•
•
•
•
VIN voltage
VBIAS voltage
Load current
Allowable inrush current on VOUT due to CL capacitor
10.2.2.1 VIN to VOUT Voltage Drop
The VIN to VOUT voltage drop in the device is determined by the RON of the device and the load current. The
RON of the device depends upon the VIN and VBIAS conditions of the device. Refer to the RON specification of the
device in the Electrical Characteristics table. After the RON of the device is determined based upon the VIN and
VBIAS conditions, use Equation 2 to calculate the VIN to VOUT voltage drop:
DV = ILOAD ´RON
where
•
•
•
ΔV = voltage drop from VIN to VOUT
ILOAD = load current
RON = On-resistance of the device for a specific VIN and VBIAS combination
(2)
An appropriate ILOAD must be chosen such that the IMAX specification of the device is not violated.
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10.2.2.2 Inrush Current
To determine how much inrush current will be caused by the CL capacitor, use Equation 3.
dVOUT
I
= CL ´
INRUSH
dt
where
•
•
•
•
IINRUSH = amount of inrush caused by CL
CL = capacitance on VOUT
dt = time it takes for change in VOUT during the ramp up of VOUT when the device is enabled
dVOUT = change in VOUT during the ramp up of VOUT when the device is enabled
(3)
The device offers adjustable rise time for VOUT and allows the user to control the inrush current during turn-on
through the CT pin. The appropriate rise time can be calculated using the design requirements and the inrush
current equation (Equation 3).
330 mA = 22 µF × 3.3 V / dt
dt = 22 µF × 3.3 V / 300mA
dt = 220 µs
(4)
(5)
(6)
To ensure an inrush current of less than 330 mA, choose a CT based on Table 1 or Equation 1 value that will
yield a rise time of more than 220 µs. See the oscilloscope captures in the Application Curves for an example of
how the CT capacitor can be used to reduce inrush current. See Table 1 for correlation between rise times and
CT values.
An appropriate CL value should be placed on VOUT such that the IMAX and IPLS specifications of the device are
not violated.
10.2.2.3 Thermal Considerations
The maximum IC junction temperature should be restricted to 125°C under normal operating conditions. To
calculate the maximum allowable dissipation, PD(max) for a given output current and ambient temperature, use
Equation 7.
TJ(MAX) - TA
=
P
D(MAX)
RθJA
where
•
•
•
•
PD(max) = maximum allowable power dissipation
TJ(max) = maximum allowable junction temperature (125°C for the TPS22958)
TA = ambient temperature of the device
R
θJA = junction to air thermal impedance. See Thermal Information . This parameter is highly dependent upon
board layout. (7)
For the DGK package, VBIAS = 5 V, and VIN = 3.3 V, the maximum ambient temperature with a 4 A load can be
determined by using the following calculation:
White Space
PD = I2 × R
(8)
(9)
White Space
TA = TJ(MAX) – RθJA × PD
White Space
TA = TJ(MAX) – RθJA × I2 × R
(10)
White Space
TA = 125°C – 185.7°C/W × (4 A)2 × 20 mΩ = 65.6°C
(11)
White Space
Therefore, with the conditions mentioned above, a maximum ambient temperature of 65.6°C is recommended.
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For the DGN package, VBIAS = 5 V, and VIN = 3.3 V, the maximum ambient temperature with a 4 A load can be
determined by using the following calculation:
White Space
PD = I2 × R
(12)
(13)
(14)
(15)
White Space
TA = TJ(MAX) – RθJA × PD
White Space
TA = TJ(MAX) – RθJA × I2 × R
White Space
TA = 125°C – 67.0°C/W × (4 A)2 × 20 mΩ = 103.6°C
White Space
Therefore, with the conditions mentioned above, a maximum ambient temperature of 103.6°C is recommended.
10.2.3 Application Curves
The three scope captures show the usage of a CT capacitor in conjunction with the device. A higher CT value
results in a slower rise and a lower inrush current.
VBIAS = 5 V
CT = Open
VIN = 3.3 V
CL = 22µF
TA = 25°C
VBIAS = 5 V
CT = 220 pF
VIN = 3.3 V
CL = 22µF
TA = 25°C
Figure 38. Inrush Current Without CT Capacitor
Figure 39. Inrush Current With CT = 220 pF
VBIAS = 5 V
CT = 470 pF
VIN = 3.3 V
CL = 22µF
TA = 25°C
Figure 40. Inrush Current With CT = 470 pF
Copyright © 2015, Texas Instruments Incorporated
23
TPS22958, TPS22958N
ZHCSDJ0A –FEBRUARY 2015–REVISED MARCH 2015
www.ti.com.cn
11 Power Supply Recommendations
The device is designed to operate from a VBIAS range of 2.5 to 5.5 V and VIN range of 0.6 to 5.5 V. The power
supply should be well regulated and placed as close to the device terminals as possible. It must be able to
withstand all transient and load current steps. In most situations, using the minimum recommended input
capacitance of 1 uF is sufficient to prevent the supply voltage from dipping when the switch is turned on. In
cases where the power supply is slow to respond to a large transient current or large load current step, additional
bulk capacitance may be required on the input. To avoid ringing on the VBIAS pin from a noisy power supply, a
bypass capacitance of 0.1 µF is recommended.
The requirements for large input capacitance can be mitigated by adding additional capacitance to the CT pin.
This will cause the load switch to turn on more slowly. Not only will this reduce transient inrush current, but it will
also give the power supply more time to respond to the load current step.
12 Layout
12.1 Layout Guidelines
•
VIN and VOUT traces should be as short and wide as possible to accommodate for high current. When
connecting the two VIN or VOUT pins together, an equal trace length should be used to avoid an unequal
distribution of current through each pin.
•
•
Use vias under the exposed thermal pad to connect to the power ground plane for thermal relief during high
current operation.
VIN pins should be bypassed to ground with low-ESR ceramic bypass capacitors. The typical recommended
bypass capacitance is 1-µF ceramic with X5R or X7R dielectric. This capacitor should be placed as close to
the device pins as possible.
•
•
VOUT pins should be bypassed to ground with low-ESR ceramic bypass capacitors. The typical
recommended bypass capacitance is one-tenth of the VIN bypass capacitor of X5R or X7R dielectric rating.
This capacitor should be placed as close to the device pins as possible.
The CT capacitor should be placed as close to the device pins as possible. The typical recommended CT
capacitance is a capacitor of X5R or X7R dielectric rating with a rating of 25 V or higher.
24
Copyright © 2015, Texas Instruments Incorporated
TPS22958, TPS22958N
www.ti.com.cn
ZHCSDJ0A –FEBRUARY 2015–REVISED MARCH 2015
12.2 Layout Example
VIA to Power Ground
Plane
VIA to another layer
VOUT Bypass
Capacitor
VIN Bypass
Capacitor
VIN
ON
VOUT
CT
CT Capacitor
VBIAS
VIN
GND
VOUT
DGN Package
VOUT Bypass
Capacitor
VIN Bypass
Capacitor
VIN
ON
VOUT
CT
CT Capacitor
VBIAS
VIN
GND
VOUT
DGK Package
版权 © 2015, Texas Instruments Incorporated
25
TPS22958, TPS22958N
ZHCSDJ0A –FEBRUARY 2015–REVISED MARCH 2015
www.ti.com.cn
13 器件和文档支持
13.1 相关链接
以下表格列出了快速访问链接。 范围包括技术文档、支持与社区资源、工具和软件,并且可以快速访问样片或购买
链接。
表 4. 相关链接
器件
产品文件夹
请单击此处
请单击此处
样片与购买
请单击此处
请单击此处
技术文档
请单击此处
请单击此处
工具与软件
请单击此处
请单击此处
支持与社区
请单击此处
请单击此处
TPS22958
TPS22958N
13.2 商标
All trademarks are the property of their respective owners.
13.3 静电放电警告
这些装置包含有限的内置 ESD 保护。 存储或装卸时,应将导线一起截短或将装置放置于导电泡棉中,以防止 MOS 门极遭受静电损
伤。
13.4 术语表
SLYZ022 — TI 术语表。
这份术语表列出并解释术语、首字母缩略词和定义。
14 机械封装和可订购信息
以下页中包括机械封装和可订购信息。 这些信息是针对指定器件可提供的最新数据。 这些数据会在无通知且不对
本文档进行修订的情况下发生改变。 欲获得该数据表的浏览器版本,请查阅左侧的导航栏。
26
版权 © 2015, Texas Instruments Incorporated
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TPS22958DGKR
TPS22958DGNR
TPS22958NDGKR
TPS22958NDGNR
ACTIVE
ACTIVE
ACTIVE
ACTIVE
VSSOP
HVSSOP
VSSOP
DGK
DGN
DGK
DGN
8
8
8
8
2500 RoHS & Green
2500 RoHS & Green
2500 RoHS & Green
2500 RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 105
-40 to 105
-40 to 105
-40 to 105
(ZBUO, ZBUX)
NIPDAUAG
NIPDAUAG
NIPDAUAG
ZBVX
ZBWX
ZBXX
HVSSOP
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
17-Jul-2020
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TPS22958DGKR
TPS22958DGKR
TPS22958DGNR
TPS22958NDGKR
TPS22958NDGNR
VSSOP
VSSOP
DGK
DGK
8
8
8
8
8
2500
2500
2500
2500
2500
330.0
330.0
330.0
330.0
330.0
12.4
12.4
12.4
12.4
12.4
5.3
5.3
5.3
5.3
5.3
3.3
3.4
3.4
3.4
3.4
1.3
1.4
1.4
1.4
1.4
8.0
8.0
8.0
8.0
8.0
12.0
12.0
12.0
12.0
12.0
Q1
Q1
Q1
Q1
Q1
HVSSOP DGN
VSSOP DGK
HVSSOP DGN
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
17-Jul-2020
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
TPS22958DGKR
TPS22958DGKR
TPS22958DGNR
TPS22958NDGKR
TPS22958NDGNR
VSSOP
VSSOP
DGK
DGK
DGN
DGK
DGN
8
8
8
8
8
2500
2500
2500
2500
2500
346.0
364.0
364.0
364.0
364.0
346.0
364.0
364.0
364.0
364.0
35.0
27.0
27.0
27.0
27.0
HVSSOP
VSSOP
HVSSOP
Pack Materials-Page 2
GENERIC PACKAGE VIEW
DGN 8
3 x 3, 0.65 mm pitch
PowerPAD VSSOP - 1.1 mm max height
SMALL OUTLINE PACKAGE
This image is a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4225482/A
www.ti.com
PACKAGE OUTLINE
DGN0008G
PowerPADTM VSSOP - 1.1 mm max height
S
C
A
L
E
4
.
0
0
0
SMALL OUTLINE PACKAGE
C
5.05
4.75
TYP
A
0.1 C
SEATING
PLANE
PIN 1 INDEX AREA
6X 0.65
8
1
2X
3.1
2.9
1.95
NOTE 3
4
5
0.38
8X
0.25
3.1
2.9
0.13
C A B
B
NOTE 4
0.23
0.13
SEE DETAIL A
EXPOSED THERMAL PAD
4
5
0.25
GAGE PLANE
2.15
1.95
9
1.1 MAX
8
0.15
0.05
1
0.7
0.4
0 -8
A
20
DETAIL A
TYPICAL
1.846
1.646
4225480/B 12/2022
PowerPAD is a trademark of Texas Instruments.
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.
5. Reference JEDEC registration MO-187.
www.ti.com
EXAMPLE BOARD LAYOUT
DGN0008G
PowerPADTM VSSOP - 1.1 mm max height
SMALL OUTLINE PACKAGE
(2)
NOTE 9
METAL COVERED
BY SOLDER MASK
(1.57)
SOLDER MASK
DEFINED PAD
SYMM
8X (1.4)
(R0.05) TYP
8
8X (0.45)
1
(3)
NOTE 9
SYMM
(1.89)
9
(1.22)
6X (0.65)
5
4
(
0.2) TYP
VIA
SEE DETAILS
(0.55)
(4.4)
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE: 15X
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
SOLDER MASK
OPENING
METAL
EXPOSED METAL
EXPOSED METAL
0.05 MAX
ALL AROUND
0.05 MIN
ALL AROUND
NON-SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
15.000
(PREFERRED)
SOLDER MASK DETAILS
4225480/B 12/2022
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
8. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
9. Size of metal pad may vary due to creepage requirement.
www.ti.com
EXAMPLE STENCIL DESIGN
DGN0008G
PowerPADTM VSSOP - 1.1 mm max height
SMALL OUTLINE PACKAGE
(1.57)
BASED ON
0.125 THICK
STENCIL
SYMM
(R0.05) TYP
8X (1.4)
8
1
8X (0.45)
(1.89)
SYMM
BASED ON
0.125 THICK
STENCIL
6X (0.65)
5
4
METAL COVERED
BY SOLDER MASK
SEE TABLE FOR
DIFFERENT OPENINGS
FOR OTHER STENCIL
THICKNESSES
(4.4)
SOLDER PASTE EXAMPLE
EXPOSED PAD 9:
100% PRINTED SOLDER COVERAGE BY AREA
SCALE: 15X
STENCIL
THICKNESS
SOLDER STENCIL
OPENING
0.1
1.76 X 2.11
1.57 X 1.89 (SHOWN)
1.43 X 1.73
0.125
0.15
0.175
1.33 X 1.60
4225480/B 12/2022
NOTES: (continued)
10. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
11. Board assembly site may have different recommendations for stencil design.
www.ti.com
重要声明和免责声明
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邮寄地址:Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2022,德州仪器 (TI) 公司
TPS22958DGNR 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
TPS22958NDGKR | TI | 具有可调节上升时间和可选输出放电功能的 5.5V、6A、13mΩ 负载开关 | DGK | 8 | -40 to 105 | 获取价格 | |
TPS22958NDGNR | TI | 具有可调节上升时间和可选输出放电功能的 5.5V、6A、13mΩ 负载开关 | DGN | 8 | -40 to 105 | 获取价格 | |
TPS22959 | TI | 具有输出放电功能的 5.5V、15A、4.4mΩ 负载开关 | 获取价格 | |
TPS22959DNYR | TI | 具有输出放电功能的 5.5V、15A、4.4mΩ 负载开关 | DNY | 8 | -40 to 85 | 获取价格 | |
TPS22959DNYT | TI | 具有输出放电功能的 5.5V、15A、4.4mΩ 负载开关 | DNY | 8 | -40 to 85 | 获取价格 | |
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TPS22960DCNR | TI | LOW INPUT VOLTAGE, DUAL LOAD SWITCH WITH CONTROLLED TURN-ON | 获取价格 | |
TPS22960RSER | TI | LOW INPUT VOLTAGE,DUAL LOAD SWITCH WITH CONTROLLED TURN-ON | 获取价格 | |
TPS22960RSET | TI | 具有输出放电功能的 2 通道、5.5V、0.5A、435mΩ 负载开关 | RSE | 8 | -40 to 85 | 获取价格 |
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