TPS22925BNYPHR [TI]
具有输出放电功能的 3.6V、3A、9.2mΩ 负载开关 | YPH | 6 | -40 to 105;
| 型号： | TPS22925BNYPHR |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 具有输出放电功能的 3.6V、3A、9.2mΩ 负载开关 | YPH | 6 | -40 to 105 开关 驱动 接口集成电路 |
| 文件： | 总27页 (文件大小：990K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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TPS22925
ZHCSEX7C –NOVEMBER 2015–REVISED FEBRUARY 2016
TPS22925 3.6V、3A、导通电阻为 9mΩ 的负载开关
1 特性
3 说明
1
•
•
输入电压范围：0.65V 至 3.6V
导通电阻
TPS22925 产品系列包括 4 款器件：TPS22925B、
TPS22925BN、TPS22925C 和 TPS22925CN。每款
器件都是一个转换率受控的 9mΩ 单通道负载开关。
–
–
–
–
VIN = 3.6V 时，RON = 9.2mΩ
VIN = 1.8V 时，RON = 9.2mΩ
VIN = 1V 时，RON = 10.2mΩ
VIN = 0.65V 时，RON = 13.1mΩ
该系列器件包含一个可在 0.65V 至 3.6V 输入电压范围
内运行的 N 沟道 MOSFET，最高可支持 3A 持续电
流。这种持续电流性能使得该系列器件适用于多种设计
与终端设备。TPS22925 系列的每一款器件在禁用时
都提供反向电流阻断功能，从而保护电源并且实现电源
多路复用功能。
•
•
•
3A 最大连续开关电流
静态电流 IQ,VIN = 29µA（VIN = 3.6V 时）
低控制输入阈值，支持使用 1.2V、1.8V、2.5V 或
3.3V 逻辑器件
器件的可控上升时间可大幅降低大容量负载电容所产生
的浪涌电流，从而降低或消除电源压降。当工作输入电
压为 3.6V 时，TPS22925Bx 器件的上升时间为
97μs，而 TPS22925Cx 器件的上升时间为 810μs。
•
受控转换率
–
–
tR = 97µs（VIN = 3.6V 时）(TPS22925Bx)
tR = 810µs（VIN = 3.6V 时）(TPS22925Cx)
•
•
阻断反向电流（禁用时）
快速输出放电 (QOD)（仅限 TPS22925B 和
TPS22925C）
TPS22925 系列器件提供一个可选的 150Ω 集成下拉
电阻，方便在开关断开时实现快速输出放电 (QOD)，
这有助于缩减总体解决方案尺寸。TPS22925 系列的
每一款器件都采用 0.9mm × 1.4mm、间距 0.5mm、高
度为 0.4mm 的 6 引脚晶圆级芯片规模封装 (WCSP)，
有助于实现尺寸更小、集成度更高的设计。WCSP 封
装与 9mΩ 导通电阻使得该系列器件适用于空间受限型
电池供电类 应用。器件在自然通风环境下的额定工作
温度范围为 –40°C 至 105°C。
•
•
晶圆级芯片规模封装：
–
0.9mm x 1.4mm、间距为 0.5mm、高度为
0.5mm
静电放电 (ESD) 性能经测试符合 JESD 22 规范
–
1kV 人体放电模式 (HBM) 和 500V 组件充电模
式(CDM)
2 应用
器件信息(1)
•
•
•
•
•
计算
固态硬盘 (SSD)
平板电脑
器件型号
TPS22925B
封装
封装尺寸（标称值）
TPS22925BN
TPS22925C
TPS22925CN
可穿戴产品
电子销售点 (EPOS)
DSBGA (6)
0.90mm x 1.40mm
(1) 要了解所有可用封装，请见数据表末尾的可订购产品附录。
简化应用
导通电阻与输入电压间的关系
SMPS
TPS22925
18
VBATT
TA = -40°C
TA = 25°C
17
TA = 85°C
TA = 105°C
16
15
14
13
12
11
10
9
VIN
ON
VOUT
CIN
Off
CL
RL
On
GND
8
7
0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Input Voltage (V)
3
3.3 3.6
D005
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SLVS840
TPS22925
ZHCSEX7C –NOVEMBER 2015–REVISED FEBRUARY 2016
www.ti.com.cn
目录
8.2 Functional Block Diagram ....................................... 13
8.3 Feature Description................................................. 13
8.4 Device Functional Modes........................................ 15
Application and Implementation ........................ 16
9.1 Application Information............................................ 16
9.2 Typical Application ................................................. 18
1
2
3
4
5
6
7
特性.......................................................................... 1
应用.......................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 2
Device Comparison Table..................................... 3
Pin Configuration and Functions......................... 3
Specifications......................................................... 4
7.1 Absolute Maximum Ratings ...................................... 4
7.2 ESD Ratings.............................................................. 4
7.3 Recommended Operating Conditions....................... 4
7.4 Thermal Information.................................................. 4
7.5 Electrical Characteristics........................................... 5
7.6 Switching Characteristics.......................................... 6
7.7 Typical Characteristics.............................................. 8
7.8 Typical Characteristics............................................ 11
Detailed Description ............................................ 13
8.1 Overview ................................................................. 13
9
10 Power Supply Recommendations ..................... 19
11 Layout................................................................... 20
11.1 Layout Guidelines ................................................. 20
11.2 Layout Example .................................................... 20
12 器件和文档支持 ..................................................... 21
12.1 社区资源................................................................ 21
12.2 商标....................................................................... 21
12.3 静电放电警告......................................................... 21
12.4 Glossary................................................................ 21
13 机械、封装和可订购信息....................................... 21
8
4 修订历史记录
Changes from Revision B (January 2016) to Revision C
Page
•
已更改Device Comparison Table .......................................................................................................................................... 1
Changes from Revision A (December 2015) to Revision B
Page
•
Deleted the STATUS column from the Device Comparison Table ........................................................................................ 3
Changes from Original (November 2015) to Revision A
Page
•
已将文档状态由“产品预览”更新为“量产数据” .......................................................................................................................... 1
2
Copyright © 2015–2016, Texas Instruments Incorporated
TPS22925
www.ti.com.cn
ZHCSEX7C –NOVEMBER 2015–REVISED FEBRUARY 2016
5 Device Comparison Table
MAXIMUM OUTPUT
ENABLE
RON (mΩ)
at VIN = 3.6 V
tR (µs) at
VIN = 3.6 V
DEVICE
QOD
CURRENT
(ON PIN)
IMAX (A)
TPS22925B
TPS22925BN
TPS22925C
TPS22925CN
Yes
No
97
9.2
3
Active High
Yes
No
810
6 Pin Configuration and Functions
YPH Package
6–Pin DSBGA
Top View
C
B
C
B
A
A
2
1
1
2
Laser Marking View
Bump View
Pin Assignments
C
B
A
GND
VOUT
VOUT
1
ON
VIN
VIN
2
Pin Functions
PIN
TYPE
DESCRIPTION
NAME
GND
ON
NO.
C1
C2
A2
B2
A1
B1
GND
I
Ground
Switch control input. Active high. Do not leave floating.
Switch input; bypass this input with a ceramic capacitor to ground. See Application
Information section for more detail.
VIN
I
VOUT
O
Switch output
Copyright © 2015–2016, Texas Instruments Incorporated
3
TPS22925
ZHCSEX7C –NOVEMBER 2015–REVISED FEBRUARY 2016
www.ti.com.cn
7 Specifications
7.1 Absolute Maximum Ratings
over operating free–air temperature range (unless otherwise noted)(1)
MIN
–0.3
–0.3
MAX
UNIT
Input voltage
VIN, ON
VOUT
4
4
3
V
V
A
Output voltage
Maximum continuous switch current at TA = 60°C IMAX
Maximum pulsed switch current, 100–μs pulse,
2% duty cycle
IPLS
4
A
Junction temperature, TJ
125
150
°C
°C
Storage temperature range, Tstg
–65
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
VALUE
±1000
±500
UNIT
Human–body model (HBM), per ANSI/ESDA/JEDEC JS–001(1)
Charged–device model (CDM), per JEDEC specification JESD22–C101(2)
V(ESD)
Electrostatic discharge
V
(1) JEDEC document JEP155 states that 500–V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 500–V HBM is possible with the necessary precautions.
(2) JEDEC document JEP157 states that 250–V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 250–V CDM is possible with the necessary precautions.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
0.65
0
MAX
3.6
UNIT
V
VIN
VOUT
VIH
VIL
Input voltage
Output voltage
3.6
V
High–level input voltage, ON
Low–level input voltage, ON
Input capacitance
0.9
0
3.6
V
0.45
V
CIN
TA
1
µF
°C
Operating free–air temperature
–40
105
7.4 Thermal Information
TPS22925xx
THERMAL METRIC(1)
YPH (DSBGA)
6 PINS
110.9
1.2
UNIT
RθJA
RθJC(top)
RθJB
ψJT
Junction–to–ambient thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
Junction–to–case (top) thermal resistance
Junction–to–board thermal resistance
30.4
Junction–to–top characterization parameter
Junction–to–board characterization parameter
0.8
ψJB
30.4
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
4
Copyright © 2015–2016, Texas Instruments Incorporated
TPS22925
www.ti.com.cn
ZHCSEX7C –NOVEMBER 2015–REVISED FEBRUARY 2016
7.5 Electrical Characteristics
over operating free–air temperature range (unless otherwise noted). Typical values are for TA = 25°C.
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX
71
84
67
79
65
76
55
66
50
60
39
49
5
UNIT
–40°C to 85°C
–40°C to 105°C
–40°C to 85°C
–40°C to 105°C
–40°C to 85°C
–40°C to 105°C
–40°C to 85°C
–40°C to 105°C
–40°C to 85°C
–40°C to 105°C
–40°C to 85°C
–40°C to 105°C
–40°C to 85°C
–40°C to 105°C
–40°C to 85°C
–40°C to 105°C
–40°C to 85°C
–40°C to 105°C
–40°C to 85°C
–40°C to 105°C
–40°C to 85°C
–40°C to 105°C
–40°C to 85°C
–40°C to 105°C
29
VIN = 3.6 V
28
26
VIN = 2.5 V
VIN = 1.8 V
VIN = 1.2 V
VIN = 1.0 V
VIN = 0.65 V
VIN = 3.6 V
VIN = 2.5 V
VIN = 1.8 V
VIN = 1.2 V
VIN = 1.0 V
VIN = 0.65 V
VON = 3.6 V,
IOUT = 0 A
IQ,VIN
Quiescent current
µA
20
16
10
0.5
0.5
0.5
0.5
0.5
0.5
9
4
6
4
6
VIN shutdown
current
VON = 0 V,
VOUT = 0 V
ISD,VIN
µA
3
5
3
5
3
5
ON pin input
leakage current
ION
0.9 V ≤ VON ≤ 3.6 V
VIN = VON = 0 V, VOUT = 3.6 V
–40°C to 105°C
0.1
µA
µA
–40°C to 85°C
–40°C to 105°C
25°C
–0.2
9.2
–2.5
–6
13
15
16
13
15
16
13
15
16
14
16
17
15
17
18
20
23
25
Reverse current
when disabled
IRC,VIN
VIN = 3.6 V
–40°C to 85°C
–40°C to 105°C
25°C
9.2
9.2
VIN = 2.5 V
–40°C to 85°C
–40°C to 105°C
25°C
VIN = 1.8 V
–40°C to 85°C
–40°C to 105°C
25°C
RON
On-resistance
IOUT = –200 mA
mΩ
9.5
VIN = 1.2 V
–40°C to 85°C
–40°C to 105°C
25°C
10.2
13.1
VIN = 1.0 V
–40°C to 85°C
–40°C to 105°C
25°C
VIN = 0.65 V
–40°C to 85°C
–40°C to 105°C
Copyright © 2015–2016, Texas Instruments Incorporated
5
TPS22925
ZHCSEX7C –NOVEMBER 2015–REVISED FEBRUARY 2016
www.ti.com.cn
Electrical Characteristics (continued)
over operating free–air temperature range (unless otherwise noted). Typical values are for TA = 25°C.
PARAMETER
TEST CONDITIONS
VIN = 3.6 V
TA
MIN
TYP
86
MAX
UNIT
VIN = 2.5 V
83
VIN = 1.8 V
82
VHYS
ON pin hysteresis
25°C
mV
VIN = 1.2 V
80
VIN = 1.0 V
79
VIN = 0.65 V
79
–40°C to 85°C
–40°C to 105°C
150
205
215
Output pull-down
resistance
VIN = VOUT = 3.6 V,
VON = 0 V
(1)
RPD
Ω
(1) Applies to TPS22925B and TPS22925C only.
7.6 Switching Characteristics(1)
over operating free-air temperature range (unless otherwise noted) VON = 3.6 V, RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF,TA = 25°C
TYP
(TPS22925Bx)
TYP
(TPS22925Cx)
PARAMETER
TEST CONDITIONS
UNIT
VIN = 3.6 V
VIN = 1.8 V
110
94
900
730
620
3
tON
tOFF
tR
Turn-on time
µs
VIN = 0.65 V
VIN = 3.6 V
VIN = 1.8 V
VIN = 0.65 V
VIN = 3.6 V
VIN = 1.8 V
VIN = 0.65 V
VIN = 3.6 V
VIN = 1.8 V
VIN = 0.65 V
VIN = 3.6 V
VIN = 1.8 V
VIN = 0.65 V
86
3
Turn-off time
2.7
10.9
97
2.7
µs
µs
µs
µs
10.9
810
520
300
2.2
Output voltage rise time
Output voltage fall time
Delay time
61
36
2.2
2.1
3.6
64
tF
2.1
3.6
500
490
470
tD
66
68
(1) Turn-off time and fall time are dependent on the time constant at the load. For TPS22925BN and TPS22925CN, there is no QOD. The
time constant is RL× CL. For TPS22925B and TPS22925C, internal pull-down resistor RPD is enabled when the switch is disabled. The
time constant is (RPD || RL) × CL.
6
Copyright © 2015–2016, Texas Instruments Incorporated
TPS22925
www.ti.com.cn
ZHCSEX7C –NOVEMBER 2015–REVISED FEBRUARY 2016
TPS22925
VIN
ON
VOUT
CL
RL
+
CIN
VBATT
œ
On
GND
Off
Figure 1. Timing Test Circuit
VON
50%
50%
tF
tOFF
tR
tON
90%
90%
VOUT
VOUT
50%
50%
10%
10%
10%
tD
Rise times and fall times of the control signal is 100 ns.
Figure 2. Timing Waveforms
Copyright © 2015–2016, Texas Instruments Incorporated
7
TPS22925
ZHCSEX7C –NOVEMBER 2015–REVISED FEBRUARY 2016
www.ti.com.cn
7.7 Typical Characteristics
45
40
35
30
25
20
3.5
3
TA = -40°C
2.5
2
TA = 25°C
TA = 85°C
TA = 105°C
1.5
1
15
10
5
TA = -40°C
TA = 25°C
TA = 85°C
TA = 105°C
0.5
0
0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Input Voltage (V)
3
3.3 3.6
0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Input Voltage (V)
3
3.3 3.6
D001
D0021
VON = 3.6 V
IOUT = 0 A
VON = 0 V
VOUT = 0 V
Figure 3. Quiescent Current vs Input Voltage
Figure 4. Input Shutdown Current vs Input Voltage
22
20
18
16
14
12
10
8
18
17
16
15
14
13
12
11
10
9
VIN = 0.65V
VIN = 1.8V
VIN = 3.6V
VIN = 0.65V
VIN = 1.8V
VIN = 3.6V
6
-40 -20
0
20
40
60
80 100 120 140 160
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Output Current (A)
3
Junction Temperature (èC)
D003
D004
VON = 3.6 V
IOUT = –200 mA
Figure 5. On-Resistance vs Temperature
TA = -40°C
VON = 3.6 V
TA = 25°C
Figure 6. On-Resistance vs Output Current
18
17
16
15
14
13
12
11
10
9
24
22
20
18
16
14
12
10
8
TA = -40°C
TA = 25°C
TA = 85°C
TA = 105°C
TA = 25°C
TA = 85°C
TA = 105°C
8
7
0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Input Voltage (V)
3
3.3 3.6
0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Input Voltage (V)
3
3.3 3.6
D005
D006
VON = 3.6 V
IOUT = –200 mA
Figure 7. On-Resistance vs Input Voltage
VON = 3.6 V
IOUT = –3 A
Figure 8. On-Resistance vs Input Voltage
8
Copyright © 2015–2016, Texas Instruments Incorporated
TPS22925
www.ti.com.cn
ZHCSEX7C –NOVEMBER 2015–REVISED FEBRUARY 2016
Typical Characteristics (continued)
100
95
90
85
80
75
70
65
60
1000
TA = -40°C
TA = 25°C
TA = 85°C
TA = 105°C
TA = -40°C
TA = 25°C
TA = 85°C
TA = 105°C
800
600
400
200
0
0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Input Voltage (V)
3
3.3 3.6
0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Input Voltage (V)
3
3.3 3.6
D008
D007
IOUT = 0 A
VON = 0 V
VOUT = VIN
Figure 10. Hysteresis vs Input Voltage
Figure 9. Output Pull-Down Resistance vs Input Voltage
770
760
750
740
730
720
710
675
670
665
660
655
650
645
TA = -40°C
TA = 25°C
TA = 85°C
TA = 105°C
TA = -40°C
TA = 25°C
TA = 85°C
TA = 105°C
0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Input Voltage (V)
3
3.3 3.6
0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Input Voltage (V)
3
3.3 3.6
D009
D0010
IOUT = 0 A
IOUT = 0 A
Figure 11. High-Level Input Voltage vs Input Voltage
Figure 12. Low-Level Input Voltage vs Input Voltage
140
120
100
80
1200
1000
800
TA = -40°C
TA = 25°C
TA = 85°C
TA = 105°C
600
60
TA = -40°C
TA = 25°C
TA = 85°C
TA = 105°C
400
40
0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
3
3.3 3.6
0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Input Voltage (V)
3
3.3 3.6
Input Voltage (V)
D0011
D0012
VON rising from 0 V to 3.6 V
CL = 0.1 μF
CIN = 1 μF
RL = 10 Ω
VON rising from 0 V to 3.6 V
CIN = 1 μF
CL = 0.1 μF
RL = 10 Ω
Figure 13. Turn-on Time vs Input Voltage (TPS22925Bx)
Figure 14. Turn-On Time vs Input Voltage (TPS22925Cx)
Copyright © 2015–2016, Texas Instruments Incorporated
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TPS22925
ZHCSEX7C –NOVEMBER 2015–REVISED FEBRUARY 2016
www.ti.com.cn
Typical Characteristics (continued)
12
120
100
80
TA = -40°C
TA = -40°C
TA = 25°C
TA = 85°C
TA = 105°C
TA = 25°C
TA = 85°C
TA = 105°C
10
8
6
60
4
40
2
20
0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Input Voltage (V)
3
3.3 3.6
0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Input Voltage (V)
3
3.3 3.6
D0013
D0014
VON falling from 3.6 V to 0 V
CIN = 1 μF
RL = 10 Ω
VON rising from 0 V to 3.6 V
CL = 0.1 μF
CIN = 1 μF
RL = 10 Ω
CL = 0.1 μF
Figure 15. Turn-Off Time vs Input Voltage
Figure 16. Rise Time vs Input Voltage (TPS22925Bx)
1000
3.8
3.6
3.4
3.2
3
TA = -40°C
TA = 25°C
TA = 85°C
TA = 105°C
TA = -40°C
TA = 25°C
TA = 85°C
TA = 105°C
800
600
400
200
2.8
2.6
2.4
2.2
2
0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
3
3.3 3.6
0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Input Voltage (V)
3
3.3 3.6
Input Voltage (V)
D0015
D0016
VON rising from 0 V to 3.6 V
CIN = 1 μF
VON falling from 3.6 V to 0 V
CIN = 1 μF
RL = 10 Ω
CL = 0.1 μF
RL = 10 Ω
CL = 0.1 μF
Figure 17. Rise Time vs Input Voltage (TPS22925Cx)
Figure 18. Fall Time vs Input Voltage
90
80
70
60
50
40
700
600
500
400
300
TA = -40°C
TA = 25°C
TA = 85°C
TA = 105°C
TA = -40°C
TA = 25°C
TA = 85°C
TA = 105°C
0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Input Voltage (V)
3
3.3 3.6
0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Input Voltage (V)
3
3.3 3.6
D0017
D0018
VON rising from 0 V to 3.6 V
CIN = 1 μF
RL = 10 Ω
VON rising from 0 V to 3.6 V
CL = 0.1 μF
CIN = 1 μF
RL = 10 Ω
CL = 0.1 μF
Figure 19. Delay Time vs Input Voltage (TPS22925Bx)
Figure 20. Delay Time vs Input Voltage (TPS22925Cx)
10
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ZHCSEX7C –NOVEMBER 2015–REVISED FEBRUARY 2016
7.8 Typical Characteristics
CIN = 1 μF, CL = 0.1 μF, RL = 10 Ω, TA = 25°C
VIN = 3.6 V
VIN = 1.8 V
VIN = 3.6 V
VIN = 0.65 V
Figure 21. Turn-On Response (TPS22925Bx)
Figure 22. Turn-On Response (TPS22925Bx)
VIN = 0.65 V
Figure 23. Turn-On Response (TPS22925Bx)
Figure 24. Turn-On Response (TPS22925Cx)
VIN = 1.8 V
Figure 25. Turn-On Response (TPS22925Cx)
Figure 26. Turn-On Response (TPS22925Cx)
Copyright © 2015–2016, Texas Instruments Incorporated
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TPS22925
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Typical Characteristics (continued)
CIN = 1 μF, CL = 0.1 μF, RL = 10 Ω, TA = 25°C
VIN = 3.6 V
VIN =1.8 V
Figure 27. Turn-Off Response (TPS22925xx)
Figure 28. Turn-Off Response (TPS22925xx)
VIN = 0.65 V
Figure 29. Turn-Off Response (TPS22925xx)
12
Copyright © 2015–2016, Texas Instruments Incorporated
TPS22925
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ZHCSEX7C –NOVEMBER 2015–REVISED FEBRUARY 2016
8 Detailed Description
8.1 Overview
The TPS22925 is a single channel, 3-A load switch in a WCSP-6 package. This device implements an N-channel
MOSFET with a controlled rise time for applications that need to limit inrush current. The device is also designed
to have low leakage current during off state. This prevents downstream circuits from pulling high standby current
from the supply. The TPS22925 provides reverse current blocking when the power switch is disabled. Integrated
control logic, driver, and output discharge FET eliminates the need for additional external components, which
reduces solution size and bill of material (BOM) count.
8.2 Functional Block Diagram
VIN
Reverse
Charge
Current
Blocking
Pump
Control
Logic
ON
Driver
VOUT
TPS22925B
TPS22925C only
QOD
GND
8.3 Feature Description
8.3.1 ON and OFF Control
The ON pin controls the state of the switch. Asserting the ON pin high enables the switch. The ON pin is
compatible with GPIOs of 1.5 V and above.
8.3.2 Quick Output Discharge (QOD) (TPS22925B and TPS22925C only)
When the switch is disabled, a discharge path is enabled between the output and ground with a typical
resistance of 150 Ω. The resistance pulls down the output and prevents it from floating when the device is
disabled.
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TPS22925
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www.ti.com.cn
Feature Description (continued)
8.3.3 Reverse Current Blocking
The reverse current blocking feature prevents current flow from the VOUT pin to the VIN pin when the TPS22925
devices are disabled. This feature is particularly useful when the output of the device needs to be driven by
another voltage source after TPS22925 is disabled (for example in a power multiplexer application). In order for
this feature to work, the TPS22925 must be disabled and either of the following conditions must be met:
•
•
VIN ≥ 0.65 V or
OUT ≥ 0.65 V
V
Figure 30 describes the ideal behavior of reverse current blocking circuit in TPS22925 devices where
•
•
•
•
IVIN is the current through the VIN pin
VSRC is the input voltage applied to the device
VFORCE is the external voltage source forced at the VOUT pin
IOUT is the output load current
V
V
IN
V
SRC
ON
V
IH
Reverse current
blocking disabled
Reverse current
blocking enabled
V
OUT
V
œ (I
× R
FORCE
)
SRC
OUT
ON
V
Due to QOD in TPS22925B
and TPS22925C
I
VIN
I
OUT
I
RC,VIN
Time
Figure 30. Reverse Current Blocking
After the device is disabled via the ON pin and VOUT is forced to an external voltage (VFORCE), less than 6 µA of
current flows from the VOUT pin to the VIN pin. This limitation prevents any extra current loading on the voltage
source supplying the VFORCE voltage.
14
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TPS22925
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ZHCSEX7C –NOVEMBER 2015–REVISED FEBRUARY 2016
8.4 Device Functional Modes
Table 1 shows the function table for the TPS22925xx devices.
Table 1. Function Table
ON
L
VIN to VOUT
OUTPUT DISCHARGE(1)
ENABLED
OFF
ON
H
DISABLED
(1) This feature is in the TPS22925B and TPS22925C only (not in the TPS22925BN and TPS22925CN).
Copyright © 2015–2016, Texas Instruments Incorporated
15
TPS22925
ZHCSEX7C –NOVEMBER 2015–REVISED FEBRUARY 2016
www.ti.com.cn
9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The TPS22925 device is a 9-mΩ, single-channel load switch with a controlled slew rate. This design example
describes a device containing an N–channel MOSFET that operates at an input voltage range of 3.6 V and
supports a maximum continuous current of 3 A. The devices provides reverse current blocking when disabled
allowing for power supply protection and power multiplexing capabilities.
9.1.1 VIN to VOUT Voltage Drop
The VIN pin to VOUT pin voltage drop in the device is determined by the RON of the device and the load current.
The on-resistance of the device depends upon the VIN condition of the device. Refer to the on-resistance
specification in the Electrical Characteristics table. After the on-resistance of the device is determined based
upon the input voltage conditions, use Equation 1 to calculate the VIN-to-VOUT voltage drop.
¿6 = ), × 2/.
where
•
•
•
•
ΔV is the voltage drop from the VIN pin to the VOUT pin
IL is the load current
RON is the on-resistance of the device for a specific input voltage
Choose an appropriate IL so that the maximum current (IMAX) specification of the device is not violated
(1)
9.1.2 Input Capacitor (CIN)
To limit the voltage drop on the input supply caused by transient inrush currents when the switch turns on into a
discharged load capacitor, place a capacitor between VIN and GND close to the pins. A 1-μF ceramic capacitor,
CIN, is usually sufficient. Higher values of CIN can be used to further reduce the voltage drop.
9.1.3 Load Capacitor (CL)
A CIN to CL ratio of 10-to-1 is recommended for minimizing the input voltage dip caused by inrush currents during
startup.
16
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ZHCSEX7C –NOVEMBER 2015–REVISED FEBRUARY 2016
Application Information (continued)
9.1.4 Standby Power Reduction
Any end equipment that is being powered from the battery has a need to reduce current consumption in order to
maintain the battery charge for a longer time. TPS22925 devices help to accomplish this reduction by turning off
the supply to the modules that are in standby state and hence significantly reducing the leakage current
overhead of the standby modules.
Always ON
Module
TPS22925
Li-Ion 1S battery
Standby
Module
or
VIN
ON
VOUT
DC/DC controller
CIN
CIN
GPIO
Micro-processor
GND
Figure 31. Standby Power Reduction
9.1.5 Power Multiplexing
Figure 32 shows a power multiplexing application using two TPS22925xN devices. Use the non-QOD version in
order to maintain the output voltage. Configure the GPIO control from the microprocessor unit as break-before-
make (BBM).
TPS22925xN
Power
Supply 1
VIN
VOUT
CIN
CL
RL
ON
GND
GPIO1
GPIO2
MCU
TPS22925xN
Power
Supply 2
VIN
VOUT
CIN
ON
GND
Figure 32. Power Multiplexing with Two TPS22925xN Devices
Copyright © 2015–2016, Texas Instruments Incorporated
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TPS22925
ZHCSEX7C –NOVEMBER 2015–REVISED FEBRUARY 2016
www.ti.com.cn
Application Information (continued)
9.1.6 Thermal Considerations
Restrict the maximum junction temperature lower than 125°C. Use Equation 2 to calculate the maximum
allowable dissipation, PD(max) for a given output load current and ambient temperature.
4 : ; F 4!
* ≠°∏
0$ ≠°∏
=
;
:
2E*!
where
•
•
•
•
PD(max) is the maximum allowable power dissipation
TJ(max) is the maximum allowable junction temperature
TA is the ambient temperature of the device
RθJA is the junction-to-air thermal impedance
(2)
NOTE
The RθJA parameter is highly dependent upon board layout. (See the Thermal Information
table)
9.2 Typical Application
SMPS
TPS22925
VBATT
VIN
ON
VOUT
CIN
Off
CL
RL
On
GND
Figure 33. Typical Application Schematic
9.2.1 Design Requirements
For this design example, use the following as the input parameters.
Table 2. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
VIN
3.6 V
1 µF
CL
Maximum Acceptable Inrush Current
40 mA
9.2.2 Detailed Design Procedure
9.2.2.1 Managing Inrush Current
When the switch is enabled, the VIN capacitors must be charged up from 0 V to VIN. This charge arrives in the
form of inrush current. Calculate the inrush current using Equation 3.
§∂
)
= #, ×
).253(
§¥
where
•
•
•
IINRUSH is the inrush current
CL is the load capacitance
dv/dt is the output slew rate
(3)
18
Copyright © 2015–2016, Texas Instruments Incorporated
TPS22925
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ZHCSEX7C –NOVEMBER 2015–REVISED FEBRUARY 2016
TPS22925Bx and TPS22925Cx have different controlled rise time. TPS22925Bx has shorter rise time than
TPS22925Cx. In the application where fast rise time is required and higher inrush current can be tolerated,
consider using the TPS22925Bx. For an application that requires a longer rise time and lower inrush current,
consider using the TPS22925Cx. Calculate the maximum acceptable slew rate using the design requirements
and Equation 4.
§∂
§¥
)
40 ≠!
).253(
=
=
= 40 6/≠≥
#
,
1ꢀ0 J&
(4)
The TPS22925Bx has a typical rise time of 97 μs at 3.6 V. This results in a slew rate of 29.7 V/ms which meets
the above design requirements. The TPS22925Cx has a typical rise time of 810 μs at 3.6 V. This results in a
slew rate of 3.6 V/ms which also meets the above design requirements. Base on inrush current requirement,
either devices can be used.
9.2.3 Application Curve
CL = 1 µF
Figure 34. Inrush Current (TPS22925C)
10 Power Supply Recommendations
This family of devices is designed to operate with a VIN range of 0.65 V to 3.6 V. This supply must be well
regulated and placed as close to the device terminal as possible with the recommended 1 μF bypass capacitor. If
the supply is located more than a few inches from the device terminals, additional bulk capacitance may be
required in addition to the ceramic bypass capacitors. If additional bulk capacitance is required, an electrolytic,
tantalum, or ceramic capacitor of 10 μF may be sufficient.
Copyright © 2015–2016, Texas Instruments Incorporated
19
TPS22925
ZHCSEX7C –NOVEMBER 2015–REVISED FEBRUARY 2016
www.ti.com.cn
11 Layout
11.1 Layout Guidelines
For best performance, all traces should be as short as possible. To be most effective, the input and load
capacitors should be placed close to the device to minimize the effects that parasitic trace inductances may have
on operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic electrical effects.
11.2 Layout Example
VIA to Power Ground Plane
VIN Bypass
VOUT Bypass
Capacitor
Capacitor
VOUT
VOUT
GND
VIN
VIN
ON
To GPIO
control
Figure 35. TPS22925xx Layout Example
20
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ZHCSEX7C –NOVEMBER 2015–REVISED FEBRUARY 2016
12 器件和文档支持
12.1 社区资源
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.2 商标
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.3 静电放电警告
这些装置包含有限的内置 ESD 保护。 存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损
伤。
12.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 机械、封装和可订购信息
以下页中包括机械、封装和可订购信息。这些信息是针对指定器件可提供的最新数据。这些数据会在无通知且不对
本文档进行修订的情况下发生改变。要获得这份数据表的浏览器版本，请查阅左侧导航栏。
版权 © 2015–2016, Texas Instruments Incorporated
21
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TPS22925BNYPHR
TPS22925BNYPHT
TPS22925BYPHR
TPS22925BYPHT
TPS22925CNYPHR
TPS22925CNYPHT
TPS22925CYPHR
TPS22925CYPHT
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
YPH
YPH
YPH
YPH
YPH
YPH
YPH
YPH
6
6
6
6
6
6
6
6
3000 RoHS & Green SAC396 | SNAGCU
250 RoHS & Green SAC396 | SNAGCU
3000 RoHS & Green SAC396 | SNAGCU
250 RoHS & Green SAC396 | SNAGCU
3000 RoHS & Green SAC396 | SNAGCU
250 RoHS & Green SAC396 | SNAGCU
3000 RoHS & Green SAC396 | SNAGCU
250 RoHS & Green SAC396 | SNAGCU
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 105
-40 to 105
-40 to 105
-40 to 105
-40 to 105
-40 to 105
-40 to 105
-40 to 105
12D9
12D9
12A8
12A8
12C9
12C9
12B9
12B9
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE OUTLINE
YPH0006
DSBGA - 0.4 mm max height
SCALE 12.000
DIE SIZE BALL GRID ARRAY
A
B
E
BALL A1
INDEX AREA
D
C
0.4 MAX
SEATING PLANE
0.05 C
BALL TYP
0.5 TYP
0.175
0.125
C
SYMM
1
D: Max = 1.393 mm, Min =1.332 mm
E: Max = 0.892 mm, Min =0.832 mm
B
A
TYP
0.5
TYP
0.25
0.15
C A B
1
2
6X
SYMM
0.015
4223801/A 06/2017
NanoFree Is a trademark of Texas Instruments.
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. NanoFreeTM package configuration.
www.ti.com
EXAMPLE BOARD LAYOUT
YPH0006
DSBGA - 0.4 mm max height
DIE SIZE BALL GRID ARRAY
(0.5) TYP
6X ( 0.23)
1
2
A
(0.5) TYP
SYMM
B
C
SYMM
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:35X
0.05 MAX
(
0.23)
METAL UNDER
SOLDER MASK
0.05 MIN
METAL
EXPOSED METAL
(
0.23)
SOLDER MASK
OPENING
EXPOSED METAL
SOLDER MASK
OPENING
NON-SOLDER MASK
SOLDER MASK
DEFINED
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
NOT TO SCALE
4223801/A 06/2017
NOTES: (continued)
4. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.
For more information, see Texas Instruments literature number SNVA009 (www.ti.com/lit/snva009).
www.ti.com
EXAMPLE STENCIL DESIGN
YPH0006
DSBGA - 0.4 mm max height
DIE SIZE BALL GRID ARRAY
(0.5) TYP
6X ( 0.225)
(R0.05) TYP
1
2
A
(0.5) TYP
SYMM
B
C
METAL
TYP
SYMM
SOLDER PASTE EXAMPLE
BASED ON 0.1 mm THICK STENCIL
SCALE:40X
4223801/A 06/2017
NOTES: (continued)
5. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.
www.ti.com
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