TPD8S300 [TI]
USB Type-C™ 端口保护器:VBUS 短路过压和 8 通道 ESD 保护;型号: | TPD8S300 |
厂家: | TEXAS INSTRUMENTS |
描述: | USB Type-C™ 端口保护器:VBUS 短路过压和 8 通道 ESD 保护 |
文件: | 总34页 (文件大小:1409K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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TPD8S300
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
TPD8S300 USB Type-C™端口保护器:VBUS 短路过压和 IEC ESD 保护
1 特性
这些非理想的设备和机械事件使得 CC 和 SBU 引脚必
须能够承受 20V 的电压,即使它们仅在 5V 或更低电
压下工作。通过在 CC 和 SBU 引脚上提供过压保
护,TPD8S300 可以使 CC 和 SBU 引脚耐受 20V 的
电压,同时不会干扰正常工作。该器件将高压 FET 串
联放置在 SBU 和 CC 线路上。当在这些线路上检测到
高于 OVP 阈值的电压时,高压开关被打开,并且将系
统的其余部分与连接器上存在的高压状态隔离。
1
•
•
•
•
•
4 通道 VBUS 短路过压保护(CC1、CC2、SBU1、
SBU2):24 VDC 容差
8 通道 IEC 61000-4-2 ESD 保护(CC1、CC2、
SBU1、SBU2、DP_T、DM_T、DP_B、DM_B)
CC1、CC2 过压保护 FET 600mA,能够通过
VCONN 电源
集成 CC 无电电池电阻器,可用于处理移动设备中
的无电电池用例
最后,大多数系统都需要为其外部引脚应用 IEC
61000-4-2 系统级 ESD 保护。TPD8S300 为 CC1、
CC2、SBU1、SBU2、DP_T(顶部 D+)、DM_T
(顶部 D–)、DP_B(底部 D+)、DM_B(底部
D–)引脚集成 IEC 61000-4-2 ESD 保护,并且无需在
连接器上放置外接高压 TVS 二极管。
3mm × 3mm WQFN 封装
2 应用
•
•
•
•
•
笔记本电脑
平板电脑
智能手机
监视器和电视
扩展坞
器件信息(1)
器件型号
TPD8S300
封装
WQFN (20)
封装尺寸(标称值)
3.00mm x 3.00mm
3 说明
(1) 如需了解所有可用封装,请参阅产品说明书末尾的可订购产品
附录。
TPD8S300 是一种单芯片 USB Type-C 端口保护解决
方案,可提供 20V VBUS 短路过压和 IEC ESD 保护。
应用图表
自从 USB Type-C 连接器发布以来,已经发布了很多
不符合 USB Type-C 规格的 USB Type-C 的产品和配
件。其中的一个示例就是仅在 VBUS 线路上布设 20V
电压的 USB Type-C 电力输送适配器。USB Type-C
的另一个问题是,由于此小型连接器中的各引脚极为靠
近,因此连接器的机械扭转和滑动可能使引脚短路。这
可能导致 20V VBUS 与 CC 和 SBU 引脚短路。此外,
由于 Type-C 连接器中的各引脚极为靠近,所以存在碎
屑和水汽导致 20V VBUS 引脚与 CC 和 SBU 引脚短路
的严重问题。
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Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SLVSDD6
TPD8S300
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
www.ti.com.cn
目录
8.3 Feature Description................................................. 16
8.4 Device Functional Modes........................................ 19
Application and Implementation ........................ 20
9.1 Application Information............................................ 20
9.2 Typical Application ................................................. 20
1
2
3
4
5
6
7
特性.......................................................................... 1
应用.......................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 2
Device Comparison Table..................................... 3
Pin Configuration and Functions......................... 3
Specifications......................................................... 5
7.1 Absolute Maximum Ratings ...................................... 5
7.2 ESD Ratings—JEDEC Specification......................... 5
7.3 ESD Ratings—IEC Specification .............................. 5
7.4 Recommended Operating Conditions....................... 5
7.5 Thermal Information.................................................. 6
7.6 Electrical Characteristics........................................... 6
7.7 Timing Requirements................................................ 9
7.8 Typical Characteristics............................................ 10
Detailed Description ............................................ 15
8.1 Overview ................................................................. 15
8.2 Functional Block Diagram ....................................... 16
9
10 Power Supply Recommendations ..................... 25
11 Layout................................................................... 26
11.1 Layout Guidelines ................................................. 26
11.2 Layout Example .................................................... 26
12 器件和文档支持 ..................................................... 27
12.1 文档支持................................................................ 27
12.2 接收文档更新通知 ................................................. 27
12.3 社区资源................................................................ 27
12.4 商标....................................................................... 27
12.5 静电放电警告......................................................... 27
12.6 Glossary................................................................ 27
13 机械、封装和可订购信息....................................... 27
8
4 修订历史记录
注:之前版本的页码可能与当前版本有所不同。
Changes from Revision A (September 2016) to Revision B
Page
•
首次公开发布的产品说明书..................................................................................................................................................... 1
2
Copyright © 2016, Texas Instruments Incorporated
TPD8S300
www.ti.com.cn
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
5 Device Comparison Table
Part Number
TPD6S300
TPD8S300
Over Voltage Protected Channels
IEC 61000-4-2 ESD Protected
Channels
4-Ch (CC1, CC2, SBU1, SBU2)
4-Ch (CC1, CC2, SBU1, SBU2)
6-Ch (CC1, CC2, SBU1, SBU2, DP,
DM)
8-Ch (CC1, CC2, SBU1, SBU2, DP_T,
DM_T, DP_B, DM_B)
6 Pin Configuration and Functions
RUK Package
20 Pin WQFN
Top View
15
11
D4
D3
16
VPWR 10
FLT
GND
D2
Thermal Pad
GND
RPD_G1
RPD_G2
D1
20
6
1
5
Pin Functions
PIN
TYPE
DESCRIPTION
NO.
NAME
Connector side of the SBU1 OVP FET. Connect to either SBU pin of the USB Type-C
connector
1
C_SBU1
I/O
Connector side of the SBU2 OVP FET. Connect to either SBU pin of the USB Type-C
connector
2
3
4
C_SBU2
VBIAS
I/O
Power
I/O
Pin for ESD support capacitor. Place a 0.1-µF capacitor on this pin to ground
Connector side of the CC1 OVP FET. Connect to either CC pin of the USB Type-C
connector
C_CC1
Connector side of the CC2 OVP FET. Connect to either CC pin of the USB Type-C
connector
5
6
7
C_CC2
RPD_G2
RPD_G1
I/O
I/O
I/O
Short to C_CC2 if dead battery resistors are needed. If dead battery resistors are not
needed, short pin to GND
Short to C_CC1 if dead battery resistors are needed. If dead battery resistors are not
needed, short pin to GND
8
GND
FLT
GND
O
Ground
9
Open drain for fault reporting
10
11
12
13
VPWR
CC2
CC1
GND
Power
I/O
2.7-V-3.6-V power supply
System side of the CC2 OVP FET. Connect to either CC pin of the CC/PD controller
System side of the CC1 OVP FET. Connect to either CC pin of the CC/PD controller
Ground
I/O
GND
Copyright © 2016, Texas Instruments Incorporated
3
TPD8S300
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
www.ti.com.cn
Pin Functions (continued)
PIN
TYPE
DESCRIPTION
NO.
NAME
SBU2
SBU1
14
15
I/O
I/O
System side of the SBU2 OVP FET. Connect to either SBU pin of the SBU MUX
System side of the SBU1 OVP FET. Connect to either SBU pin of the SBU MUX
USB2.0 IEC ESD protection. Connect to any of the USB2.0 pins of the USB Type-C
connector
16
D4
I/O
USB2.0 IEC ESD protection. Connect to any of the USB2.0 pins of the USB Type-C
connector
17
18
19
D3
GND
D2
I/O
GND
I/O
Ground
USB2.0 IEC ESD protection. Connect to any of the USB2.0 pins of the USB Type-C
connector
USB2.0 IEC ESD protection. Connect to any of the USB2.0 pins of the USB Type-C
connector
20
—
D1
I/O
Thermal Pad
GND
Internally connected to GND. Used as a heatsink. Connect to the PCB GND plane
4
Copyright © 2016, Texas Instruments Incorporated
TPD8S300
www.ti.com.cn
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–40
MAX
4
UNIT
V
VPWR
VI
Input voltage
RPD_G1, RPD_G2
FLT
24
6
V
V
VO
Output voltage
VBIAS
24
6
V
D1, D2, D3, D4
V
VIO
I/O voltage
CC1, CC2, SBU1, SBU2
C_CC1, C_CC2, C_SBU1, C_SBU2
6
V
24
85
150
V
TA
Operating free air temperature
Storage temperature
°C
°C
Tstg
–65
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings—JEDEC Specification
VALUE
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V(ESD)
Electrostatic discharge
V
Charged-device model (CDM), per JEDEC specification JESD22-
C101(2)
±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as ±2000
V may actually have higher performance.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as ±500 V
may actually have higher performance.
7.3 ESD Ratings—IEC Specification
VALUE
±8000
UNIT
Contact discharge
Air-gap discharge
Contact discharge
Air-gap discharge
IEC 61000-4-2, C_CC1, C_CC2, D1, D2,
D3, D4
±15000
±6000
V(ESD)
Electrostatic discharge(1)
V
IEC 61000-4-2, C_SBU1, C_SBU2
±15000
(1) Tested on the TPD8S300 EVM connected to the TPS65982 EVM.
7.4 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
3.3
MAX
3.6
5.5
5.5
5.5
5.5
4.3
UNIT
V
VPWR
2.7
0
VI
Input voltage
RPD_G1, RPD_G2
V
VO
Output voltage
FLT pull-up resistor power rail
D1, D2, D3, D4
2.7
–0.3
0
V
V
VIO
I/O voltage
CC1, CC2, C_CC1, C_CC2
SBU1, SBU2, C_SBU1, C_SBU2
V
0
V
Current flowing into CC1/2 and flowing out of
C_CC1/2, VCCx – VC_CCx ≤ 250 mV
IVCONN
IVCONN
VCONN current
VCONN current
600
mA
A
Current flowing into CC1/2 and flowing out of
C_CC1/2, TJ ≤ 105°C
1.25
Copyright © 2016, Texas Instruments Incorporated
5
TPD8S300
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
www.ti.com.cn
Recommended Operating Conditions (continued)
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
300
UNIT
kΩ
FLT pull-up resistance
1.7
External components(1)
VBIAS capacitance(2)
0.1
1
µF
VPWR capacitance
0.3
µF
(1) For recommended values for capacitors and resistors, the typical values assume a component placed on the board near the pin.
Minimum and maximum values listed are inclusive of manufacturing tolerances, voltage derating, board capacitance, and temperature
variation. The effective value presented must be within the minimum and maximums listed in the table.
(2) The VBIAS pin requires a minimum 35-VDC rated capacitor. A 50-VDC rated capacitor is recommended to reduce capacitance derating.
See the VBIAS Capacitor Selection section for more information on selecting the VBIAS capacitor.
7.5 Thermal Information
TPD8S300
THERMAL METRIC(1)
RUK (WQFN)
20 PINS
45.2
UNIT
RθJA
Junction-to-ambient thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
48.8
17.1
ψJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
0.6
ψJB
17.1
RθJC(bot)
3.7
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.6 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
CC OVP Switches
On resistance of CC OVP FETs, TJ
≤ 85°C
CCx = 5.5 V
278
278
392
415
5
mΩ
mΩ
mΩ
RON
On resistance of CC OVP FETs, TJ
≤ 105°C
CCx = 5.5 V
Sweep CCx voltage between 0 V
and 1.2 V
RONFLAT
On resistance flatness
Capacitance from C_CCx or CCx
to GND when device is powered.
VC_CCx/VCCx = 0 V to 1.2 V , f
= 400 kHz
CON_CC
Equivalent on capacitance
60
74
120
6.1
pF
Dead battery pull-down resistance
(only present when device is
unpowered). Effective resistance of
RD and FET in series
RD_DB
V_C_CCx = 2.6 V
4.1
5.1
kΩ
Threshold voltage of the pulldown
FET in series with RD during dead
battery
VTH_DB
VOVPCC
I_CC = 80 µA
0.5
0.9
6
1.2
6.2
V
V
Place 5.5 V on C_CCx. Step up
C_CCx until the FLT pin is
asserted
OVP threshold on CC pins
5.75
Place 6.5 V on C_CCx. Step
down the voltage on C_CCx until
the FLT pin is deasserted.
Measure difference between
rising and falling OVP threshold
for CC
VOVPCC_HYS
Hysteresis on CC OVP
50
mV
6
Copyright © 2016, Texas Instruments Incorporated
TPD8S300
www.ti.com.cn
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
Electrical Characteristics (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Measure the –3-dB bandwidth
from C_CCx to CCx. Single
ended measurement, 50-Ω
system. Vcm = 0.1 V to 1.2 V
BWON
On bandwidth single ended (–3 dB)
100
MHz
Hot-Plug C_CCx with a 1 meter
USB Type C Cable, place a 30-Ω
load on CCx
Short-to-VBUS tolerance on the CC
pins
VSTBUS_CC
24
V
V
Hot-Plug C_CCx with a 1 meter
USB Type C Cable. Hot-Plug
voltage C_CCx = 24 V. VPWR =
3.3 V. Place a 30-Ω load on CCx
Short-to-VBUS system-side
clamping voltage on the CC pins
(CCx)
VSTBUS_CC_CLAMP
8
SBU OVP Switches
SBUx = 3.6 V. –40°C ≤ TJ ≤
+85°C
RON
On resistance of SBU OVP FETs
On resistance flatness
4
6.5
1.5
Ω
Ω
Sweep SBUx voltage between 0
V and 3.6 V. –40°C ≤ TJ ≤ +85°C
RONFLAT
0.7
Capacitance from SBUx or
C_SBUx to GND when device is
powered. Measure at
VC_SBUx/VSBUx = 0.3 V to 3.6
V
CON_SBU
Equivalent on capacitance
OVP threshold on SBU pins
6
pF
V
Place 3.6 V on C_SBUx. Step up
C_SBUx until the FLT pin is
asserted
VOVPSBU
4.35
4.5
4.7
Place 5 V on C_CCx. Step down
the voltage on C_CCx until the
FLT pin is deasserted. Measure
difference between rising and
falling OVP threshold for
C_SBUx
VOVPSBU_HYS
Hysteresis on SBU OVP
50
mV
Measure the –3-dB bandwidth
from C_SBUx to SBUx. Single
ended measurement, 50-Ω
system. Vcm = 0.1 V to 3.6 V
BWON
On bandwidth single ended (–3 dB)
1000
–80
MHz
dB
V
Measure crosstalk at f = 1 MHz
from SBU1 to C_SBU2 or SBU2
to C_SBU1. Vcm1 = 3.6 V, Vcm2
= 0.3 V. Be sure to terminate
open sides to 50 Ω
XTALK
Crosstalk
Hot-Plug C_SBUx with a 1 meter
USB Type C Cable. Put a 150-nF
capacitor in series with a 40-Ω
resistor to GND on SBUx
Short-to-VBUS tolerance on the
SBU pins
VSTBUS_SBU
24
Hot-Plug C_SBUx with a 1 meter
USB Type C Cable. Hot-Plug
voltage C_SBUx = 24 V. VPWR
= 3.3 V. Put a 100-nF capacitor
in series with a 40-Ω resistor to
GND on SBUx
Short-to-VBUS system-side
VSTBUS_SBU_CLAMP clamping voltage on the SBU pins
(SBUx)
8
V
Power Supply and Leakage Currents
Place 1 V on VPWR and raise
voltage until SBU or CC FETs
turnon
VPWR_UVLO
VPWR under voltage lockout
2.1
2.3
2.5
V
Place 3 V on VPWR and lower
voltage until SBU or CC FETs
turnoff; measure difference
between rising and falling UVLO
to calculate hysteresis
VPWR_UVLO_HYS
VPWR UVLO hysteresis
100
150
200
mV
Copyright © 2016, Texas Instruments Incorporated
7
TPD8S300
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
www.ti.com.cn
Electrical Characteristics (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VPWR = 3.3 V (typical), VPWR =
3.6 V (maximum). –40°C ≤ TJ ≤
+85°C.
IVPWR
VPWR supply current
90
120
µA
VPWR = 3.3 V, VC_CCx = 3.6 V,
CCx pins are floating, measure
leakage into C_CCx pins. Result
must be same if CCx side is
Leakage current for CC pins when
device is powered
ICC_LEAK
5
µA
biased and C_CCx is left floating.
VPWR = 3.3 V, VC_SBUx = 3.6
V, SBUx pins are floating,
measure leakge into C_SBUx
pins. Result must be same if
SBUx side is biased and
C_SBUx is left floating. –40°C ≤
TJ ≤ 85°C.
Leakage current for SBU pins when
device is powered
ISBU_LEAK
3
µA
µA
VPWR = 0 V or 3.3 V, VC_CCx =
24 V, CCx pins are set to 0 V,
measure leakage into C_CCx
pins
Leakage current for CC pins when
device is in OVP
IC_CC_LEAK_OVP
1200
VPWR = 0 V or 3.3 V, VC_SBUx
Leakage current for SBU pins when = 24 V, SBUx pins are set to 0 V,
IC_SBU_LEAK_OVP
400
30
µA
µA
device is in OVP
measure leakage into C_SBUx
pins
VPWR = 0 V or 3.3 V, VC_CCx =
24 V, CCx pins are set to 0 V,
measure leakage out of CCx pins
Leakage current for CC pins when
device is in OVP
ICC_LEAK_OVP
VPWR = 0 V or 3.3 V, VC_SBUx
Leakage current for SBU pins when = 24 V, SBUx pins are set to 0 V,
ISBU_LEAK_OVP
–1
1
1
µA
µA
device is in OVP
measure leakage out of SBUx
pins
V_Dx = 3.6 V, measure leakage
into Dx pins
IDx_LEAK
FLT Pin
VOL
Leakage current for Dx pins
IOL = 3 mA. Measure the voltage
at the FLT pin
Low-level output voltage
0.4
V
Over Temperature Protection
The rising over-temperature
protection shutdown threshold
TSD_RISING
150
130
175
140
35
°C
°C
°C
The falling over-temperature
protection shutdown threshold
TSD_FALLING
The over-temperature protection
shutdown threshold hysteresis
TSD_HYST
Dx ESD Protection
VRWM_POS
Reverse stand-off voltage from Dx
to GND
Dx to GND. IDX ≤ 1 µA
GND to Dx
5.5
0
V
V
V
Reverse stand-off voltage from GND
to Dx
VRWM_NEG
VBR_POS
VBR_NEG
CIO
Break-down voltage from Dx to
GND
Dx to GND. IBR = 1 mA
7
Break-down voltage from GND to
Dx
GND to Dx. IBR = 8 mA
f = 1 MHz, VIO = 2.5 V
f = 1 MHz, VIO = 2.5 V
0.6
V
Dx to GND or GND to Dx
1.7
pF
pF
Differential capacitance between
two Dx pins
ΔCIO
0.02
Dynamic on-resistance Dx IEC
clamps
RDYN
Dx to GND or GND to Dx
0.4
Ω
8
Copyright © 2016, Texas Instruments Incorporated
TPD8S300
www.ti.com.cn
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
7.7 Timing Requirements
MIN
NOM
MAX
UNIT
Power-On and Off Timings
Time from crossing rising VPWR UVLO until CC and SBU OVP
FETs are on
tON
3.5
ms
Minimum slew rate allowed to guarantee CC and SBU FETs
turnoff during a power off
dVPWR_OFF/dt
–0.5
V/µs
Over Voltage Protection
OVP response time on the CC pins. Time from OVP asserted until
tOVP_RESPONSE_CC
70
80
ns
ns
OVP FETs turnoff
OVP response time on the SBU pins. Time from OVP asserted
until OVP FETs turnoff
tOVP_RESPONSE_SBU
OVP recovery time on the CC pins. Once an OVP has occurred,
the minimum time duration until the CC FETs turn back on. OVP
must be removed for CC FETs to turn back on
tOVP_RECOVERY_CC_
1
21
21
29
39
39
ms
OVP recovery time on the SBU pins. Once an OVP has occurred,
the minimum time duration until the SBU FETs turn back on. OVP
must be removed for SBU FETs to turn back on
tOVP_RECOVERY_SBU
_1
29
ms
ms
tOVP_RECOVERY_CC_ OVP recovery time on the CC pins. Time from OVP removal until
0.5
CC FET turns back on, if device has been in OVP > 40 ms
2
tOVP_RECOVERY_SBU OVP recovery time on the SBU pins. Time from OVP removal
0.5
20
5
ms
µs
until SBU FET turns back on, if device has been in OVP > 40 ms
_2
tOVP_FLT_ASSERTION Time from OVP asserted to FLT assertion
tOVP_FLT_DEASSERTI
ON
Time from CC FET turnon after an OVP to FLT deassertion
ms
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9
TPD8S300
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
www.ti.com.cn
7.8 Typical Characteristics
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-3
-6
-9
SBUx to C_SBUx
-12
1E+7
1E+8
1E+9
3E+9
0
1E+9
2E+9
3E+9
Frequency (Hz)
Frequency (Hz)
D016
D017
图 1. SBU S21 BW
图 2. SBU Crosstalk
30.5
10.5
8.5
6.5
4.5
2.5
0.5
-1.5
VC_SBU1
IC_SBU1
VSBU1
VC_SBU1
IC_SBU1
VSBU1
28.5
26.5
24.5
22.5
20.5
18.5
16.5
14.5
12.5
10.5
8.5
V/FLT
V/FLT
6.5
4.5
2.5
0.5
-1.5
-0.05 0.2
0.45
0.7
0.95
1.2
1.45
1.7
1.95
-2.2 -0.2 1.8 3.8 5.8 7.8 9.8 11.8 13.8 15.8 17.8
Time (ms)
Time (ms)
D014
D014
图 3. SBU Short-to-VBUS 20 V
图 4. SBU Short-to-VBUS 5 V
140
120
100
80
7
6
5
4
3
2
-40èC
25èC
85èC
125èC
60
40
20
0
-20
-40
-60
-80
C_SBU
SBU
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
VSBU1 (V)
3
3.3 3.6
-10
0
10 20 30 40 50 60 70 80 90 100 110
Time (ns)
D014
D001
图 5. SBU RON Flatness
图 6. SBU IEC 61000-4-2 4-kV Response Waveform
10
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TPD8S300
www.ti.com.cn
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
Typical Characteristics (接下页)
80
2.5
2
C_SBU1
C_SBU2
60
40
20
1.5
1
0
-20
-40
-60
-80
-100
0.5
C_SBU
SBU
0
-10
0
10 20 30 40 50 60 70 80 90 100 110
Time (ns)
-40 -30 -20 -10
0
10 20 30 40 50 60 70 8085
Temperature (èC)
D001
D014
图 7. SBU IEC 61000-4-2 –4-kV Response Waveform
图 8. SBU Path Leakage Current vs Ambient Temperature at
3.6 V
500
450
400
350
300
250
200
150
100
50
0.000125
C_SBU1 at 24 V
C_SBU2 at 24 V
C_SBU1 at 5.5 V
C_SBU2 at 5.5 V
SBU1: C_SBU1 at 24 V
SBU2: C_SBU2 at 24 V
SBU1: C_SBU1 at 5.5 V
0.0001
SBU2: C_SBU2 at 5.5 V
7.5E-5
5E-5
2.5E-5
0
0
-40 -30 -20 -10
0
10 20 30 40 50 60 70 8085
-40 -30 -20 -10
0
10 20 30 40 50 60 70 8085
Temperature (èC)
Temperature (èC)
D014
D014
图 9. C_SBU OVP Leakage Current vs Ambient Temperature
图 10. SBU OVP Leakage Current vs Ambient Temperature
at 5.5 V and 24 V
at 5.5 V and 24 V
3.6
3.3
3
30
C_SBU
25
20
15
10
5
2.7
2.4
2.1
1.8
1.5
1.2
0.9
VPWR
C_SBU1
SBU1
0.6
0.3
0
0
-3
-2
-1
0
1
2
3
4
5
6
7
0
5
10
15
20
25
30
35
40
Time (ms)
Voltage (V)
D014
D005
图 11. SBU FET Turnon Timing
图 12. C_SBU TLP Curve Unpowered
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TPD8S300
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
www.ti.com.cn
Typical Characteristics (接下页)
0
-3
1
0.75
0.5
0.25
0
-6
-0.25
-0.5
-0.75
-1
-9
C_SBU
30 35
-12
1E+7
-5
0
5
10
15
20
25
1E+8
1E+9
3E+9
Voltage (V)
Frequency (Hz)
D003
D016
图 13. SBU IV Curve
图 14. CC S21 BW
30.5
28.5
26.5
24.5
22.5
20.5
18.5
16.5
14.5
12.5
10.5
8.5
0.6
0.5
0.4
0.3
0.2
0.1
0
VC_CC1
IC_CC1
VCC1
-40èC
25èC
85èC
125èC
V/FLT
6.5
4.5
2.5
0.5
-1.5
-0.3 -0.1 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.71.8
0
0.2
0.4
0.6
0.8
1
1.2
Time (ms)
VCC1 (V)
D014
D014
图 15. CC Short-to-VBUS 20 V
图 16. CC RON Flatness
140
120
100
80
80
60
40
20
60
0
40
20
-20
-40
-60
-80
-100
0
-20
-40
-60
-80
C_CC
CC
C_CC
CC
-10
0
10 20 30 40 50 60 70 80 90 100 110
Time (ns)
-10
0
10 20 30 40 50 60 70 80 90 100 110
Time (ns)
D001
D001
图 17. CC IEC 61000-4-2 8-kV Response Waveform
图 18. CC IEC 61000-4-2 –8-kV Response Waveform
12
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TPD8S300
www.ti.com.cn
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
Typical Characteristics (接下页)
1030
1025
1020
1015
1010
1005
1000
20
C_CC1
C_CC2
C_CC1
19
C_CC2
18
17
16
15
14
13
12
11
10
9
8
-40 -30 -20 -10
0
10 20 30 40 50 60 70 8085
-40 -30 -20 -10
0
10 20 30 40 50 60 70 8085
Temperature (èC)
Temperature (èC)
D014
D014
图 19. C_CC Path Leakage Current vs Ambient Temperature
图 20. C_CC OVP Leakage Current vs Ambient Temperature
at C_CC = 5.5 V
at C_CC = 24 V
4.3E-4
5.5
5
CC1: C_CC1 at 24 V
CC2: C_CC2 at 24 V
3.8E-4
3.3E-4
2.8E-4
2.3E-4
1.8E-4
1.3E-4
8E-5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
VPWR
C_CC1
CC1
3E-5
-40 -30 -20 -10
0
10 20 30 40 50 60 70 8085
Temperature (èC)
-3
-2
-1
0
1
2
3
4
5
6
7
Time (ms)
D014
D014
图 21. CC OVP Leakage Current vs Ambient Temperature at
图 22. CC FET Turnon Timing
C_CC = 24 V
30
1
0.75
0.5
C_CC
25
20
15
10
5
0.25
0
-0.25
-0.5
-0.75
-1
C_CC
25 30
0
0
5
10
15
20
25
30
35
40
45
-5
0
5
10
15
20
Voltage (V)
Voltage (V)
D0035
D003
图 23. C_CC TLP Curve Unpowered
图 24. C_CC IV Curve
版权 © 2016, Texas Instruments Incorporated
13
TPD8S300
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
www.ti.com.cn
Typical Characteristics (接下页)
100
7
6
5
4
3
2
1
0
IVPWR
Dx at 3.6 V
Dx at 0.4 V
97.5
95
92.5
90
87.5
85
82.5
80
-40 -30 -20 -10
0
10 20 30 40 50 60 70 8085
-40 -30 -20 -10
0
10 20 30 40 50 60 70 8085
Temperature (èC)
Temperature (èC)
D014
D014
图 25. VPWR Supply Leakage vs Ambient Temperature at 3.6
图 26. Dx Leakage Current vs Ambient Temperature at 0.4 V
V
and 3.6 V
1
0.75
0.5
30
Dx
25
20
15
10
5
0.25
0
-0.25
-0.5
-0.75
Dx
10
-1
-2
0
0
2
4
6
8
0
2
4
6
8
10
12
14
16
18
Voltage (V)
Voltage (V)
D003
D0035
图 27. Dx IV Curve
图 28. Dx TLP Curve
14
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TPD8S300
www.ti.com.cn
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
8 Detailed Description
8.1 Overview
The TPD8S300 is a single chip USB Type-C port protection solution that provides 20-V Short-to-VBUS
overvoltage and IEC ESD protection. Due to the small pin pitch of the USB Type-C connector and non-compliant
USB Type-C cables and accessories, the VBUS pins can get shorted to the CC and SBU pins inside the USB
Type-C connector. Because of this short-to-VBUS event, the CC and SBU pins need to be 20-V tolerant, to
support protection on the full USB PD voltage range. Even if a device does not support 20-V operation on VBUS
,
non complaint adaptors can start out with 20-V VBUS condition, making it necessary for any USB Type-C device
to support 20 V protection. The TPD8S300 integrates four channels of 20-V Short-to-VBUS overvoltage protection
for the CC1, CC2, SBU1, and SBU2 pins of the USB Type-C connector.
Additionally, IEC 61000-4-2 system level ESD protection is required in order to protect a USB Type-C port from
ESD strikes generated by end product users. The TPD8S300 integrates eight channels of IEC61000-4-2 ESD
protection for the CC1, CC2, SBU1, SBU2, DP_T (Top side D+), DM_T (Top Side D–), DP_B (Bottom Side D+),
and DM_B (Bottom Side D–) pins of the USB Type-C connector. This means IEC ESD protection is provided for
all of the low-speed pins on the USB Type-C connector in a single chip in the TPD8S300. Additionally, high-
voltage IEC ESD protection that is 22-V DC tolerant is required for the CC and SBU lines in order to
simultaneously support IEC ESD and Short-to-VBUS protection; there are not many discrete market solutions that
can provide this kind of protection. This high-voltage IEC ESD diode is what the TPD8S300 integrates,
specifically designed to guarantee it works in conjunction with the overvoltage protection FETs inside the device.
This sort of solution is very hard to generate with discrete components.
版权 © 2016, Texas Instruments Incorporated
15
TPD8S300
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
www.ti.com.cn
8.2 Functional Block Diagram
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51
53
52
54
Copyright © 2016, Texas Instruments Incorporated
8.3 Feature Description
8.3.1 4-Channels of Short-to-VBUS Overvoltage Protection (CC1, CC2, SBU1, SBU2 Pins): 24-VDC Tolerant
The TPD8S300 provides 4-channels of Short-to-VBUS Overvoltage Protection for the CC1, CC2, SBU1, and
SBU2 pins of the USB Type-C connector. The TPD8S300 is able to handle 24-VDC on its C_CC1, C_CC2,
C_SBU1, and C_SBU2 pins. This is necessary because according to the USB PD specification, with VBUS set for
20-V operation, the VBUS voltage is allowed to legally swing up to 21 V, and 21.5 V on voltage transitions from a
different USB PD VBUS voltage. The TPD8S300 builds in tolerance up to 24-VBUS to provide margin above this
21.5 V specification to be able to support USB PD adaptors that may break the USB PD specification.
When a short-to-VBUS event occurs, ringing happens due to the RLC elements in the hot-plug event. With very
low resistance in this RLC circuit, ringing up to twice the settling voltage can appear on the connector. More than
2x ringing can be generated if any capacitor on the line derates in capacitance value during the short-to-VBUS
event. This means that more than 44 V could be seen on a USB Type-C pin during a Short-to-VBUS event. The
TPD8S300 has built in circuit protection to handle this ringing. The diode clamps used for IEC ESD protection
also clamp the ringing voltage during the short-to-VBUS event to limit the peak ringing to around 30 V.
Additionally, the overvoltage protection FETs integrated inside the TPD8S300 are 30-V tolerant, therefore being
capable of supporting the high-voltage ringing waveform that is experienced during the short-to-VBUS event. The
well designed combination of voltage clamps and 30-V tolerant OVP FETs insures the TPD8S300 can handle
Short-to-VBUS hot-plug events with hot-plug voltages as high as 24-VDC
.
16
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TPD8S300
www.ti.com.cn
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
Feature Description (接下页)
The TPD8S300 has an extremely fast turnoff time of 70 ns typical. Furthermore, additional voltage clamps are
placed after the OVP FET on the system side (CC1, CC2, SBU1, SBU2) pins of the TPD8S300, to further limit
the voltage and current that is exposed to the USB Type-C CC/PD controller during the 70 ns interval while the
OVP FET is turning off. The combination of connector side voltage clamps, OVP FETs with extremely fast turnoff
time, and system side voltage clamps all work together to insure the level of stress seen on a CC1, CC2, SBU1,
or SBU2 pin during a short-to-VBUS event is less than or equal to an HBM event. This is done by design, as any
USB Type-C CC/PD controller will have built in HBM ESD protection.
图 29 is an example of the TPD8S300 successfully protecting the TPS65982, the world's first fully integrated, full-
featured USB Type-C and PD controller.
图 29. TPD8S300 Protecting the TPS65982 During a Short-to-VBUS Event
8.3.2 8-Channels of IEC 61000-4-2 ESD Protection (CC1, CC2, SBU1, SBU2, DP_T, DM_T, DP_B, DM_B
Pins)
The TPD8S300 integrates 8-Channels of IEC 61000-4-2 system level ESD protection for the CC1, CC2, SBU1,
SBU2, DP_T (Top side D+), DM_T (Top Side D–), DP_B (Bottom Side D+), and DM_B (Bottom Side D–) pins.
USB Type-C ports on end-products need system level IEC ESD protection in order to provide adequate
protection for the ESD events that the connector can be exposed to from end users. The TPD8S300 integrates
IEC ESD protection for all of the low-speed pins on the USB Type-C connector in a single chip. Also note, that
while the RPD_Gx pins are not individually rated for IEC ESD, when they are shorted to the C_CCx pins, the
C_CCx pins provide protection for both the C_CCx pins and the RPD_Gx pins. Additionally, high-voltage IEC
ESD protection that is 24-V DC tolerant is required for the CC and SBU lines in order to simultaneously support
IEC ESD and Short-to-VBUS protection; there are not many discrete market solutions that can provide this kind of
protection. The TPD8S300 integrates this type of high-voltage ESD protection so a system designer can meet
both IEC ESD and Short-to-VBUS protection requirements in a single device.
8.3.3 CC1, CC2 Overvoltage Protection FETs 600 mA Capable for Passing VCONN Power
The CC pins on the USB Type-C connector serve many functions; one of the functions is to be a provider of
power to active cables. Active cables are required when desiring to pass greater than 3 A of current on the VBUS
line or when the USB Type-C port uses the super-speed lines (TX1+, TX2–, RX1+, RX1–, TX2+, TX2–, RX2+,
RX2–). When CC is configured to provide power, it is called VCONN. VCONN is a DC voltage source in the
range of 3 V-5.5 V. If supporting VCONN, a VCONN provider must be able to provide 1 W of power to a cable;
this translates into a current range of 200 mA to 333 mA (depending on your VCONN voltage level). Additionally,
if operating in a USB PD alternate mode, greater power levels are allowed on the VCONN line.
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17
TPD8S300
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
www.ti.com.cn
Feature Description (接下页)
When a USB Type-C port is configured for VCONN and using the TPD8S300, this VCONN current flows through
the OVP FETs of the TPD8S300. Therefore, the TPD8S300 has been designed to handle these currents and
have an RON low enough to provide a specification compliant VCONN voltage to the active cable. The
TPD8S300 is designed to handle up to 600 mA of DC current to allow for alternate mode support in addition to
the standard 1 W required by the USB Type-C specification.
8.3.4 CC Dead Battery Resistors Integrated for Handling the Dead Battery Use Case in Mobile Devices
An important feature of USB Type-C and USB PD is the ability for this connector to serve as the sole power
source to mobile devices. With support up to 100 W, the USB Type-C connector supporting USB PD can be
used to power a whole new range of mobile devices not previously possible with legacy USB connectors.
When the USB Type-C connector is the sole power supply for a battery powered device, the device must be able
to charge from the USB Type-C connector even when its battery is dead. In order for a USB Type-C power
adapter to supply power on VBUS, RD pull-down resistors must be exposed on the CC pins. These RD resistors
are typically included inside a USB Type-C CC/PD controller. However, when the TPD8S300 is used to protect
the USB Type-C port, the OVP FETs inside the device isolates these RD resistors in the CC/PD controller when
the mobile device has no power. This is because when the TPD8S300 has no power, the OVP FETs are turned
off to guarantee overvoltage protection in a dead battery condition. Therefore, the TPD8S300 integrates high-
voltage, dead battery RD pull-down resistors to allow dead battery charging simultaneously with high-voltage
OVP protection.
If dead battery support is required, short the RPD_G1 pin to the C_CC1 pin, and short the RPD_G2 pin to the
C_CC2 pin. This connects the dead battery resistors to the connector CC pins. When the TPD8S300 is
unpowered, and the RP pull-up resistor is connected from a power adaptor, this RP pull-up resistor activates the
RD resistor inside the TPD8S300. This enables VBUS to be applied from the power adaptor even in a dead
battery condition. Once power is restored back to the system and back to the TPD8S300 on its VPWR pin, the
TPD8S300 removes its RD pull-down resistor and turn on its OVP FETs within 3.5 ms to guarantee the RD pull-
down resistor inside the CC/PD Controller is exposed within 10 ms. This is by design, because if the RD pull-
down resistor is not exposed within 10 ms, the power adaptor can legally interpret this behavior as a port
disconnect and remove VBUS
.
If desiring to power the CC/PD controller during dead battery mode and if the CC/PD Controller is configured as
a DRP, it is critical that the TPD8S300 be powered before or at the same time that the CC/PD controller is
powered. It is also critical that when unpowered, the CC/PD controller also expose its dead battery resistors.
When the TPD8S300 gets powered, it exposes the CC pins of the CC/PD controller within 3.5 ms. Once the
TPD8S300 turns on, the RD pull-down resistors of the CC/PD controller must be present immediately, in order to
guarantee the power adaptor connected to power the dead battery device keeps its VBUS turned on. If the power
adaptor sees any change to its CC voltage for more than 10 ms, it can disconnect VBUS. This removes power
from the device with its battery still not sufficiently charged, which consequently removes power from the CC/PD
controller and the TPD8S300. Then the RD resistors of the TPD8S300 are exposed again, connect the power
adaptor's VBUS to start the cycle over. This creates an infinite loop, never or very slowly charging the mobile
device.
If the CC/PD Controller is configured for DRP and has started its DRP toggle before the TPD8S300 turns on, this
DRP toggle is unable to guarantee that the power adaptor does not disconnect from the port. Therefore, it is
recommended if the CC/PD controller is configured for DRP, that its dead battery resistors be exposed as well,
and that they remain exposed until the TPD8S300 turns on. This is typically accomplished by powering the
TPD8S300 at the same time as the CC/PD controller when powering the CC/PD controller in dead battery
operation.
If dead battery charging is not required in your application, connect the RPD_G1 and RPD_G2 pins to ground.
8.3.5 3-mm × 3-mm WQFN Package
The TPD8S300 comes in a small, 3-mm × 3-mm WQFN package, greatly reducing the size of implementing a
similar protection solution discretely. The WQFN package allows support for a wider range of PCB designs.
Additionally, the pin-out of the TPD8S300 was designed to optimize routing with the TPS6598x family of USB
Type-C/PD controllers.
18
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TPD8S300
www.ti.com.cn
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
8.4 Device Functional Modes
表 1 describes all of the functional modes for the TPD8S300. The "X" in the below table are "do not care"
conditions, meaning any value can be present within the absolute maximum ratings of the datasheet and
maintain that functional mode. Also note the D1, D2, D3, D4 pins are not listed, because these pins have IEC
ESD protection diodes that are always present, regardless of whether the device is powered and regardless of
the conditions on any of the other pins.
表 1. Device Mode Table
Device Mode Table
MODE
Inputs
C_SBUx
Outputs
CC FETs
VPWR C_CCx
RPD_Gx
TJ
FLT
SBU FETs
Unpowered,
no dead
battery
<UVLO
X
X
X
X
Grounded
X
High-Z
OFF
OFF
OFF
support
Normal
Operating Unpowered,
Conditions dead battery <UVLO
Shorted to
C_CCx
X
High-Z
High-Z
OFF
support
X, forced
OFF
Powered on >UVLO <OVP
Thermal
<OVP
X
<TSD
>TSD
ON
ON
X, forced
OFF
Low (Fault
Asserted)
>UVLO
X
OFF
OFF
shutdown
CC over
voltage
condition
X, forced
OFF
Low (Fault
Asserted)
Fault
Conditions
>UVLO >OVP
X
<TSD
<TSD
OFF
OFF
OFF
OFF
SBU over
voltage
condition
X, forced
OFF
Low (Fault
Asserted)
>UVLO
X
>OVP
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TPD8S300
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
www.ti.com.cn
9 Application and Implementation
注
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The TPD8S300 provides 4-channels of Short-to-VBUS overvoltage protection for the CC1, CC2, SBU1, and
SBU2 pins of the USB Type-C connector, and 8-channels of IEC ESD protection for the CC1, CC2, SBU1,
SBU2, DP_T, DM_T, DP_B, DM_B pins of the USB Type-C connector. Care must be taken to insure that the
TPD8S300 provides adequate system protection as well as insuring that proper system operation is maintained.
The following application example explains how to properly design the TPD8S300 into a USB Type-C system.
9.2 Typical Application
5/ꢅ5/
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.ꢂꢃꢃery
/ꢄꢂrger
Ü{._5t
/onꢃroller
Ü{._5t
/onꢃroller
ë.Ü{_{LbY
5a
5t
!Üó_b !Üó_t
tt_/!.[ꢁ
tt_ꢀë
L2/
Ië_D!Çꢁ1
Ië_D!Çꢁ2
Çt{6ꢀ982
ë.Ü{
5a_. 5t_.
5a_Ç 5t_Ç /_{.Ü2
/_{.Ü1 /_//2
/_//1
[5h_3ë3
/
/
//2
//1
/
//1
{.Ü1
//2
ëtíw
{.Ü2
51
ëtíw
wC[Ç
52
53
54
C[Ç
Ço ꢁ/ or 82
Çt58{300
ë.L!{
/
ë.L!{
wt5_D2
wt5_D1
/_//1
/_{.Ü2 /_{.Ü1
/_//2
ë.Ü{
5a_. 5t_. 5a_Ç 5t_Ç {.Ü2 {.Ü1 //2
//1
Copyright © 2016, Texas Instruments Incorporated
图 30. TPD8S300 Typical Application Diagram
20
版权 © 2016, Texas Instruments Incorporated
TPD8S300
www.ti.com.cn
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
Typical Application (接下页)
Copyright © 2016, Texas Instruments Incorporated
图 31. TPD8S300 Reference Schematic
9.2.1 Design Requirements
In this application example we study the protection requirements for a full-featured USB Type-C DRP Port, fully
equipped with USB-PD, USB2.0, USB3.0, Display Port, and 100 W charging. The TPS65982 is used to easily
enable a full-featured port with a single chip solution. In this application, all the pins of the USB Type-C connector
are utilized. Both the CC and SBU pins are susceptible to shorting to the VBUS pin. With 100 W charging, VBUS
operates at 20 V, requiring the CC and SBU pins to tolerate 20-VDC. Additionally, the CC, SBU, and USB2.0 pins
require IEC system level ESD protection. With these protection requirements present for the USB Type-C
connector, the TPD8S300 is utilized. The TPD8S300 is a single chip solution that provides all the required
protection for the low speed and USB2.0 pins in the USB Type-C connector.
表 2 shows the TPD8S300 desgin parameters.
表 2. Design Parameters
DESIGN PARAMETER
VBUS nominal operating voltage
EXAMPLE VALUE
20 V
24 V
Short-to-VBUS tolerance for the CC and SBU pins
VBIAS nominal capacitance
0.1 µF
100 W
85°C
Dead battery charging
Maximum ambient temperature requirement
版权 © 2016, Texas Instruments Incorporated
21
TPD8S300
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
www.ti.com.cn
9.2.2 Detailed Design Procedure
9.2.2.1 VBIAS Capacitor Selection
As noted in the Recommended Operating Conditions table, a minimum of 35-VBUS rated capacitor is required for
the VBIAS pin, and a 50-VBUS capacitor is recommended. The VBIAS capacitor is in parallel with the central IEC
diode clamp integrated inside the TPD8S300. A forward biased hiding diode connects the VBIAS pin to the
C_CCx and C_SBUx pins. Therefore, when a Short-to-VBUS event occurs at 20 V, 20-VBUS minus a forward
biased diode drop is exposed to the VBIAS pin. Additionally, during the short-to-VBUS event, ringing can occur
almost double the settling voltage of 20 V, allowing a potential 40 V to be exposed to the C_CCx and C_SBUx
pins. However, the internal IEC clamps limits the voltage exposed to the C_CCx and C_SBUx pins to around 30
V. Therefore, at least 35-VBUS capacitor is required to insure the VBIAS capacitor does not get destroyed during
Short-to-VBUS events.
A 50-V, X7R capacitor is recommended, however. This is to further improve the derating performance of the
capacitors. When the voltage across a real capacitor is increased, its capacitance value derates. The more the
capacitor derates, the greater than 2x ringing can occur in the short-to-VBUS RLC circuit. 50-V X7R capacitors
have great derating performance, allowing for the best short-to-VBUS performance of the TPD8S300.
Additionally, the VBIAS capacitor helps pass IEC 61000-4-2 ESD strikes. The more capacitance present, the
better the IEC performance. So the less the VBIAS capacitor derates, the better the IEC performance. 表 3
shows the real capacitors recommended to achieve the best performance with the TPD8S300.
表 3. Design Parameters
CAPACITOR SIZE
PART NUMBER
0402
0603
CC0402KRX7R9BB104
GRM188R71H104KA93D
9.2.2.2 Dead Battery Operation
For this application, we want to support 100-W dead battery operation; when the laptop is out of battery, we still
want to charge the laptop at 20 V and 5 A. This means that the USB PD Controller must receive power in dead
battery mode. The TPS65982 has its own built in LDO in order to supply the TPS65982 power from VBUS in a
dead battery condition. The TPS65982 can also provide power to its flash during this condition through its
LDO_3V3 pin.
The TPD8S300s OVP FETs remain OFF when it is unpowered in order to insure in a dead battery situation
proper protection is still provided to the PD controller in the system, in this case the TPS65982. However, when
the OVP FETs are OFF, this isolates the TPS65982s dead battery resistors from the USB Type-C ports CC pins.
A USB Type-C power adaptor must see the RD pull-down dead battery resistors on the CC pins or it does not
provide power on VBUS. Since the TPS65982s dead battery resistors are isolated from the USB Type-C
connector's CC pins, The TPD8S300s built in dead battery resistors must be connected. Short the RPD_G1 pin
to the C_CC1 pin, and short the RPD_G2 pin to the C_CC2 pin.
Once the power adaptor sees the TPD8S300s dead battery resistors, it applies 5 V on the VBUS pin. This
provides power to the TPS65982, turning the PD controller on, and allowing the battery to begin to charge.
However, this application requires 100 W charging in dead battery mode, so VBUS at 20 V and 5 A is required.
USB PD negotiation is required to accomplish this, so the TPS65982 needs to be able to communicate on the
CC pins. This means the TPD8S300 needs to be turned on in dead battery mode as well so the TPD65982s PD
controller can be exposed to the CC lines. To accomplish this, it is critical that the TPD8S300 is powered by the
TPS65982s internal LDO, the LDO_3V3 pin. This way, when the TPS65982 receives power on VBUS, the
TPD8S300 is turned on simultaneously.
It is critical that the TPS65982s dead battery resistors are also connected to its CC pins for dead battery
operation. Short the TPS65982s RPD_G1 pin to its C_CC1 pin, and its RPD_G2 pin to its C_CC2 pin. It is critical
that the TPS65982s dead battery resistors are present; once the TPD8S300 receives power, removes its dead
battery resistors and turns on its OVP FETs, RD pull-down resistors must be present on the CC line in order to
guarantee the power adaptor stays connected. If RD is not present and the voltage on CC changes for more than
10 ms, the power adaptor interprets this as a disconnect and remove VBUS
.
Also, it is important that the TPS65982s dead battery resistors are present so it properly boots up in dead battery
operation with the correct voltages on its CC pins.
22
版权 © 2016, Texas Instruments Incorporated
TPD8S300
www.ti.com.cn
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
Once this process has occurred, the TPS65982 can start negotiating with the power adaptor through USB PD for
higher power levels, allowing 100-W operation in dead battery mode.
For more information on the TPD8S300 dead battery operation, see the CC Dead Battery Resistors Integrated
for Handling the Dead Battery Use Case in Mobile Devices section in the description section of the datasheet.
Also, see 图 32 for a waveform of the CC line when the TPD8S300 is turning on and exposing the TPS65982s
dead battery resistors to the USB Type-C connector.
9.2.2.3 CC Line Capacitance
USB PD has a specification for the total amount of capacitance that is required for proper USB PD BMC
operation on the CC lines. The specification from section 5.8.6 of the USB PD Specification is given below in 表
4.
表 4. USB PD cReceiver Specification
NAME
DESCRIPTION
MIN
MAX UNIT
COMMENT
The DFP or UFP system shall have
capacitance within this range when
not transmitting on the line.
cReceiver
CC receiver capacitance
200
600 pF
Therefore, the capacitance on the CC lines must stay in between 200 pF and 600 pF when USB PD is being
used. Therefore, the combination of capacitances added to the system by the TPS65982, the TPD8S300, and
any external capacitor must fall within these limits. 表 5 shows the analysis involved in choosing the correct
external CC capacitor for this system, and shows that an external CC capacitor is required.
表 5. CC Line Capacitor Calculation
CC Capacitance
MIN
MAX
UNIT
COMMENT
From the USB PD Specification section
(cReceiver, section 5.8.6).
CC line target capacitance
200
600
pF
TPS65982 capacitance
TPD8S300 capacitance
70
60
120
120
pF
pF
From the TPS65982 Datasheet.
From the Electrical Characteristics table.
CAP, CERM, 220 pF, 25 V, ±10%, X7R,
0201 (For min and max, assume ±50%
capacitance change with temperature and
voltage derating to be overly conservative).
Proposed capacitor GRM033R71E221KA01D
110
240
330
570
pF
pF
TPS65982 + TPD8S300 +
GRM033R71E221KA01D
Meets USB PD cReceiver Specification
9.2.2.4 Additional ESD Protection on CC and SBU Lines
If additional IEC ESD protection is desired to be placed on either the CC or SBU lines, it is important that high-
voltage ESD protection diodes be used. The maximum DC voltage that can be seen in USB PD is 21-VBUS, with
21.5 V allowed during voltage transitions. Therefore, an ESD protection diode must have a reverse stand off
voltage higher than 21.5 V in order to guarantee the diode does not breakdown during a short-to-VBUS event and
have large amounts of current flowing through it indefinitely, destroying the diode. A reverse stand off voltage of
24 V is recommended to give margin above 21.5 V in case USB Type-C power adaptors are released in the
market which break the USB Type-C specification.
Furthermore, due to the fact that the Short-to-VBUS event applies a DC voltage to the CC and SBU pins, a deep-
snap back diode cannot be used unless its minimum trigger voltage is above 42 V. During a Short-to-VBUS event,
RLC ringing of up to 2x the settling voltage can be exposed to CC and SBU, allowing for up to 42 V to be
exposed. Furthermore, if any capacitor derates on the CC or SBU line, greater than 2x ringing can occur. Since
this ringing is hard to bound, it is recommended to not use deep-snap back diodes. If the diode triggers during
the short-to-VBUS hot-plug event, it begins to operate in is conduction region. With a 20-VBUS source present on
the CC or SBU line, this allows the diode to conduct indefinitely, destroying the diode.
9.2.2.5 FLT Pin Operation
The FLT and OVP FET have specific timing parameters to allow different benefits depending on how the system
designer desires the system to respond to a Short-to-VBUS event.
版权 © 2016, Texas Instruments Incorporated
23
TPD8S300
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
www.ti.com.cn
Once a Short-to-VBUS occurs on the C_CCx or C_SBUx pins, the FLT pin is asserted in 20 µs (typical) so the PD
controller can be notified quickly. If VBUS is being shorted to CC or SBU, it is recommended to respond to the
event by forcing a detach in the USB PD controller to remove VBUS from the port. Although the USB Type-C port
using the TPD8S300 is not damaged, as the TPD8S300 provides protection from these events, the other device
connected through the USB Type-C Cable or any active circuitry in the cable can be damaged. Although shutting
the VBUS off through a detach does not guarantee it stops the other device or cable from being damaged, it can
mitigate any high current paths from causing further damage after the initial damage takes place. Additionally,
even if the active cable or other device does have proper protection, the short-to-VBUS event may corrupt a
configuration in an active cable or in the other PD controller, so it is best to detach and reconfigure the port.
For UFPs, the TPD8S300 automatically forces a detach, removing the need to use the FLT pin if the only
response required by your system during a short-to-VBUS event is forcing a detach on the port. The TPD8S300
keeps its CC OVP FET OFF for at least 21 ms after a Short-to-VBUS event occurs, causing the CC line voltage to
change from is configuration value for more than 20 ms, forcing the PD controllers to detach. For DFPs, this
operation cannot be guaranteed because of the parasitic diode in the OVP FET from CCx to C_CCx and from
SBUx to C_SBUx. Therefore for DFPs, using the FLT pin recommended. For our application using the TPS65982
as a DRP, using the FLT pin is recommended.
9.2.2.6 How to Connect Unused Pins
If either the RPD_Gx pins or any of the Dx pins are unused in a design, they must be connected to GND.
9.2.3 Application Curves
图 32. TPD8S300 and TPS65982 Turning On in Dead
图 33. TPD8S300 Protecting the TPS65982 During a Short-
Battery Mode
to-VBUS Event
24
版权 © 2016, Texas Instruments Incorporated
TPD8S300
www.ti.com.cn
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
10 Power Supply Recommendations
The VPWR pin provides power to all the circuitry in the TPD8S300. It is recommended a 1-µF decoupling
capacitor is placed as close as possible to the VPWR pin. If USB PD is desired to be operated in dead battery
conditions, it is critical that the TPD8S300 share the same power supply as the PD controller in dead battery
boot-up (such as sharing the same dead battery LDO). See the CC Dead Battery Resistors Integrated for
Handling the Dead Battery Use Case in Mobile Devices section for more details.
版权 © 2016, Texas Instruments Incorporated
25
TPD8S300
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
www.ti.com.cn
11 Layout
11.1 Layout Guidelines
Proper routing and placement is important to maintain the signal integrity the USB2.0, SBU, CC line signals. The
following guidelines apply to the TPD8S300:
•
Place the bypass capacitors as close as possible to the VPWR pin, and ESD protection capacitor as close as
possible to the VBIAS pin. Capacitors must be attached to a solid ground. This minimizes voltage disturbances
during transient events such as short-to-VBUS and ESD strikes.
•
The USB2.0 and SBU lines must be routed as straight as possible and any sharp bends must be minimized.
Standard ESD recommendations apply to the C_CC1, C_CC2, C_SBU1, C_SBU2, D1, D2, D3, and D4 pins as
well:
•
The optimum placement for the device is as close to the connector as possible:
–
EMI during an ESD event can couple from the trace being struck to other nearby unprotected traces,
resulting in early system failures.
–
The PCB designer must minimize the possibility of EMI coupling by keeping any unprotected traces away
from the protected traces which are between the TPD8S300 and the connector.
•
•
Route the protected traces as straight as possible.
Eliminate any sharp corners on the protected traces between the TVS and the connector by using rounded
corners with the largest radii possible.
–
Electric fields tend to build up on corners, increasing EMI coupling.
•
It is best practice to not via up to the D1, D2, D3, and D4 pins from a trace routed on another layer. Rather, it
is better to via the trace to the layer with the Dx pin, and to continue that trace on that same layer. See the
ESD Protection Layout Guide application report, section 1.3 for more details.
11.2 Layout Example
Db5
Db5
Çó1+
wó1+
wó1-
ë.Ü{
{.Ü2
5-
Çó1-
ë.Ü{
//1
5+
51
52
wt5_D1
wt5_D2
Db5
5+
5-
//2
Db5
53
{.Ü1
ë.Ü{
wó2-
ꢀC[Ç
ë.Ü{
Çó2-
ëtíw
54
Çó2+
Db5
wó2+
Db5
图 34. TPD8S300 Typical Layout
26
版权 © 2016, Texas Instruments Incorporated
TPD8S300
www.ti.com.cn
ZHCSG00B –SEPTEMBER 2016–REVISED NOVEMBER 2016
12 器件和文档支持
12.1 文档支持
12.1.1 相关文档
请参阅如下相关文档:
《TPD8S300 评估模块用户指南》
12.2 接收文档更新通知
如需接收文档更新通知,请访问 ti.com 上的器件产品文件夹。请单击右上角的通知我 进行注册,即可收到任意产
品信息更改每周摘要。有关更改的详细信息,请查看任意已修订文档中包含的修订历史记录。
12.3 社区资源
下列链接提供到 TI 社区资源的连接。链接的内容由各个分销商“按照原样”提供。这些内容并不构成 TI 技术规范,
并且不一定反映 TI 的观点;请参阅 TI 的 《使用条款》。
TI E2E™ 在线社区 TI 的工程师对工程师 (E2E) 社区。此社区的创建目的在于促进工程师之间的协作。在
e2e.ti.com 中,您可以咨询问题、分享知识、拓展思路并与同行工程师一道帮助解决问题。
设计支持
TI 参考设计支持 可帮助您快速查找有帮助的 E2E 论坛、设计支持工具以及技术支持的联系信息。
12.4 商标
E2E is a trademark of Texas Instruments.
USB Type-C is a trademark of USB Implementers Forum.
All other trademarks are the property of their respective owners.
12.5 静电放电警告
这些装置包含有限的内置 ESD 保护。 存储或装卸时,应将导线一起截短或将装置放置于导电泡棉中,以防止 MOS 门极遭受静电损
伤。
12.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 机械、封装和可订购信息
以下页面包括机械、封装和可订购信息。这些信息是指定器件的最新可用数据。这些数据发生变化时,我们可能不
会另行通知或修订此文档。如欲获取此产品说明书的浏览器版本,请参阅左侧的导航栏。
版权 © 2016, Texas Instruments Incorporated
27
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TPD8S300RUKR
ACTIVE
WQFN
RUK
20
3000 RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
8S30
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
3-Jun-2022
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
K0
P1
W
B0
Reel
Diameter
Cavity
A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
Overall width of the carrier tape
W
P1 Pitch between successive cavity centers
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2
Q3 Q4
Q1 Q2
Q3 Q4
User Direction of Feed
Pocket Quadrants
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TPD8S300RUKR
WQFN
RUK
20
3000
330.0
12.4
3.3
3.3
1.1
8.0
12.0
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
3-Jun-2022
TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
L
*All dimensions are nominal
Device
Package Type Package Drawing Pins
WQFN RUK 20
SPQ
Length (mm) Width (mm) Height (mm)
367.0 367.0 35.0
TPD8S300RUKR
3000
Pack Materials-Page 2
PACKAGE OUTLINE
RUK0020B
WQFN - 0.8 mm max height
S
C
A
L
E
4
.
0
0
0
PLASTIC QUAD FLATPACK - NO LEAD
3.1
2.9
B
A
0.5
0.3
PIN 1 INDEX AREA
3.1
2.9
0.25
0.15
DETAIL
OPTIONAL TERMINAL
TYPICAL
DIMENSION A
OPTION 01
OPTION 02
(0.1)
(0.2)
C
0.8 MAX
SEATING PLANE
0.08 C
0.05
0.00
(DIM A) TYP
OPT 02 SHOWN
1.7 0.05
6
10
EXPOSED
THERMAL PAD
16X 0.4
5
11
21
SYMM
4X
1.6
1
15
SEE TERMINAL
DETAIL
0.25
20X
0.15
0.1
C A
B
20
16
PIN 1 ID
SYMM
0.05
(OPTIONAL)
0.5
0.3
20X
4222676/A 02/2016
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
www.ti.com
EXAMPLE BOARD LAYOUT
RUK0020B
WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
(
1.7)
SYMM
20
16
20X (0.6)
1
15
20X (0.2)
(0.6)
TYP
21
SYMM
(2.8)
16X (0.4)
5
11
(R0.05)
TYP
(
0.2) TYP
VIA
6
10
(2.8)
LAND PATTERN EXAMPLE
SCALE:20X
0.05 MIN
ALL AROUND
0.05 MAX
ALL AROUND
SOLDER MASK
OPENING
METAL
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
NON SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4222676/A 02/2016
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
www.ti.com
EXAMPLE STENCIL DESIGN
RUK0020B
WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
SYMM
(0.47) TYP
16
(R0.05) TYP
20
20X (0.6)
1
15
21
20X (0.2)
(0.47)
TYP
SYMM
(2.8)
16X (0.4)
11
5
METAL
TYP
6
10
4X ( 0.75)
(2.8)
SOLDER PASTE EXAMPLE
BASED ON 0.1 mm THICK STENCIL
EXPOSED PAD 21:
78% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
SCALE:20X
4222676/A 02/2016
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
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