TLE2027-EP [TI]
Excalibur⢠LOW-NOISE HIGH-SPEED PRECISION OPERATIONAL AMPLIFIER; Excaliburâ ?? ¢低噪声高速精密运算放大器
| 型号： | TLE2027-EP |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | Excalibur⢠LOW-NOISE HIGH-SPEED PRECISION OPERATIONAL AMPLIFIER |
| 文件： | 总28页 (文件大小：795K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLE2027-EP
Excalibur™ LOW-NOISE HIGH-SPEED
PRECISION OPERATIONAL AMPLIFIER
www.ti.com
SLOS511–JUNE 2007
FEATURES
–
–
VIO . . . 100 μV Max
•
Controlled Baseline
AVD . . . 45 V/μV Typ With RL = 2 kΩ,
19 V/μV Typ With RL = 600 Ω
–
One Assembly/Test Site, One Fabrication
Site
•
Available in Standard-Pinout Small-Outline
Package
•
•
Extended Temperature Performance of
–55°C to 125°C
•
•
Output Features Saturation Recovery Circuitry
Macromodels and Statistical information
Enhanced Diminishing Manufacturing Sources
(DMS) Support
D PACKAGE
(TOP VIEW)
•
•
•
Enhanced Product-Change Notification
Qualification Pedigree(1)
OFFSET N1
1
2
3
4
8
7
6
5
OFFSET N2
VCC+
Outstanding Combination of DC Precision and
AC Performance:
IN-
IN+
OUT
–
–
Unity-Gain Bandwidth . . . 13 MHz Typ
VCC-
NC
Vn . . . 3.3 nV/√Hz at f = 10 Hz Typ,
2.5 nV/√Hz at f = 1 kHz Typ
(1)
Component qualification in accordance with JEDEC and
industry standards to ensure reliable operation over an
extended temperature range. This includes, but is not limited
to, Highly Accelerated Stress Test (HAST) or biased 85/85,
temperature cycle, autoclave or unbiased HAST,
electromigration, bond intermetallic life, and mold compound
life. Such qualification testing should not be viewed as
justifying use of this component beyond specified
performance and environmental limits.
DESCRIPTION
The TLE2027 contains innovative circuit design expertise and high-quality process control techniques to produce
a level of ac performance and dc precision previously unavailable in single operational amplifiers. Manufactured
using TI's state-of-the-art Excalibur process, these devices allow upgrades to systems that use lower-precision
devices.
In the area of dc precision, the TLE2027 offers maximum offset voltages of 100 μV, common-mode rejection
ratio of 131 dB (typ), supply voltage rejection ratio of 144 dB (typ), and dc gain of 45 V/μV (typ).
The ac performance of the TLE2027 is highlighted by a typical unity-gain bandwidth specification of 15 MHz, 55°
of phase margin, and noise voltage specifications of 3.3 nV/√Hz and 2.5 nV/√Hz at frequencies of 10 Hz and
1 kHz, respectively.
The TLE2027 is available in a wide variety of packages, including the industry-standard 8-pin small-outline
version for high-density system applications. The device is characterized for operation over the full military
temperature range of –55°C to 125°C.
ORDERING INFORMATION(1)
PACKAGED DEVICES
SMALL OUTLINE(2) (D)
TLE2027MDREP
VIOmax AT
TA
25°C
–55°C to 125°C
100 μV
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
(2) The D package is available taped and reeled with 2500 units/reel.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 2007, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
TLE2027-EP
Excalibur™ LOW-NOISE HIGH-SPEED
PRECISION OPERATIONAL AMPLIFIER
www.ti.com
SLOS511–JUNE 2007
SYMBOL
OFFSET N1
IN+
+
-
OUT
IN-
OFFSET N2
2
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TLE2027-EP
Excalibur™ LOW-NOISE HIGH-SPEED
PRECISION OPERATIONAL AMPLIFIER
www.ti.com
SLOS511–JUNE 2007
TLE202XY CHIP INFORMATION
This chip, when properly assembled, displays characteristics similar to the TLE202xC. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. The chip may be mounted with
conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
(1)
(3)
VCC+
(7)
(6)
OFFSET N1
IN +
(4)
+
-
(6)
OUT
(2)
(8)
IN-
(4)
VCC-
OFFSET N2
90
(3)
(7)
Chip Thickness: 15 MiIs Typical
(2)
Bonding Pads: 4 ´ 4 Mils Minimum
TJmax = 150°C
Tolerances Are ±10%.
All Dimensions Are in Mils.
(8)
Pin (4) is Internally Connected
to Backside of Chip.
(1)
73
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Excalibur™ LOW-NOISE HIGH-SPEED
PRECISION OPERATIONAL AMPLIFIER
www.ti.com
SLOS511–JUNE 2007
EQUIVALENT SCHEMATIC
* N I
+ N I
4
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TLE2027-EP
Excalibur™ LOW-NOISE HIGH-SPEED
PRECISION OPERATIONAL AMPLIFIER
www.ti.com
SLOS511–JUNE 2007
Absolute Maximum Ratings(1)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX UNIT
VCC+
VCC–
VID
VI
Supply voltage(2)
19
–19
±1.2
VCC±
±1
V
V
V
Supply voltage
Differential input voltage(3)
Input voltage range (any input)
Input current (each input)
Output current
II
mA
mA
mA
mA
IO
±50
50
Total current into VCC+
Total current out of VCC–
Duration of short-circuit current at (or below) 25°C(4)
50
Unlimited
See Dissipation
Rating Table
Continuous total power dissipation
TA
Operating free-air temperature range
Storage temperature range(5)
–55
–65
125
°C
°C
°C
Tstg
150
260
Lead temperature 1,6 mm (1/16 in) from case for 10 s
D package
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential voltages, are with respect to the midpoint between VCC+ and VCC–
.
(3) Differential voltages are at IN+ with respect to IN–. Excessive current flows if a differential input voltage in excess of approximately
±1.2 V is applied between the inputs, unless some limiting resistance is used.
(4) The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum dissipation
rating is not exceeded.
(5) Long-term high-temperature storage and/or extended use at maximum recommended operating conditions may result in a reduction of
overall device life. See http://www.ti.com/ep_quality for additional information on enhanced product packaging.
Dissipation Rating Table
T
A ≤ 25°C
DERATING FACTOR
ABOVE TA = 25°C
TA = 70°C
POWER RATING
TA = 105°C
POWER RATING
TA = 125°C
POWER RATING
PACKAGE
POWER RATING
D
725 mW
5.8 mW/°C
464 mW
261 mW
145 mW
Recommended Operating Conditions
MIN
MAX
±19
11
UNIT
VCC±
VIC
Supply voltage
±4
–11
V
TA = 25°C
TA = Full range(1)
Common-mode input voltage
Operating free-air temperature
V
–10.3
–55
10.3
125
TA
°C
(1) Full range is –55°C to 125°C.
5
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Excalibur™ LOW-NOISE HIGH-SPEED
PRECISION OPERATIONAL AMPLIFIER
www.ti.com
SLOS511–JUNE 2007
Electrical Characteristics
at specified free-air temperature, VCC± = ±15 V (unless otherwise noted)
(1)
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX UNIT
25°C
Full range
Full range
25°C
20
100
μV
VIO
Input offset voltage
VIC = 0, RS = 50 Ω
200
αVIO
Temperature coefficient of input offset voltage
Input offset voltage long-term drift(2)
VIC = 0, RS = 50 Ω
VIC = 0, RS = 50 Ω
0.4
0.006
6
μV/°C
μV/mo
25°C
90
nA
IIO
Input offset current
Input bias current
VIC = 0, RS = 50 Ω
VIC = 0, RS = 50 Ω
Full range
25°C
150
15
90
nA
IIB
Full range
150
–11
to
–13
to
25°C
11
13
VICR
Common-mode input voltage range
RS = 50 Ω
V
–10.3
to
Full range
10.3
25°C
Full range
25°C
10.5
10
12.9
13.2
–13
–13.5
45
RL = 600 Ω
RL = 2 kΩ
RL = 600 Ω
RL = 2 kΩ
VOM+
Maximum positive peak output voltage swing
Maximum negative peak output voltage swing
V
V
12
Full range
25°C
11
–10.5
–10
–12
–11
5
Full range
25°C
VOM–
Full range
25°C
VO = ±11 V, RL = 2 kΩ
VO = ±10 V, RL = 2 kΩ
Full range
25°C
2.5
3.5
1.8
2
AVD
Large-signal differential voltage amplification
38
V/μV
VO = ±10 V, RL = 1 kΩ
VO = ±10 V, RL = 600 Ω
Full range
25°C
19
8
Ci
zo
Input capacitance
25°C
pF
Open-loop output impedance
IO = 0
25°C
50
Ω
25°C
100
96
131
VIC = VICRmin,
RS = 50 Ω
CMRR Common-mode rejection ratio
dB
dB
Full range
VCC± = ±4 V to ±18 V,
RS = 50 Ω
25°C
94
90
144
3.8
kSVR
Supply-voltage rejection ratio (ΔVCC±/ΔVIO)
VCC± = ±4 V to ±18 V,
RS = 50 Ω
Full range
25°C
5.3
mA
5.6
ICC
Supply current
VO = 0, No load
Full range
(1) Full range is –55°C to 125°C.
(2) Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated to
TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.
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TLE2027-EP
Excalibur™ LOW-NOISE HIGH-SPEED
PRECISION OPERATIONAL AMPLIFIER
www.ti.com
SLOS511–JUNE 2007
Operating Characteristics
at specified free-air temperature, VCC± = ±15 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
RL = 2 kΩ, CL = 100 pF,
See Figure 1
1.7
2.8
SR
Slew rate at unity gain
V/μs
RL = 2 kΩ, CL = 100 pF,
TA = –55°C to 125°C,
See Figure 1
1
f = 10 Hz
3.3
2.5
Vn
Equivalent input noise voltage (see Figure 2) RS = 20 Ω
nV/√Hz
nV
f = 1 kHz
f = 0.1 Hz to 10 Hz
VN(PP)
In
Peak-to-peak equivalent input noise voltage
Equivalent input noise current
50
f = 10 Hz
f = 1 kHz
1.5
pA/√Hz
0.4
THD
B1
Total harmonic distortion
VO = 10 V, AVD = 1(1)
RL = 2 kΩ, CL = 100 pF
RL = 2 kΩ
<0.002%
13
Unity-gain bandwidth (see Figure 3)
Maximum output-swing bandwidth
Phase margin at unity gain (see Figure 3)
MHz
kHz
BOM
φm
30
RL = 2 kΩ, CL = 100 pF
55°
(1) Measured distortion of the source used in the analysis was 0.002%.
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Excalibur™ LOW-NOISE HIGH-SPEED
PRECISION OPERATIONAL AMPLIFIER
www.ti.com
SLOS511–JUNE 2007
PARAMETER MEASUREMENT INFORMATION
Rf
2 kW
15 V
15 V
-
-
VO
RI
VO
+
+
VI
-15 V
CL
100 pF
(see Note A)
=
RL = 2 k W
-15 V
20 W
20 W
NOTE A: CL includes fixture capacitance.
Figure 1. Slew-Rate Test Circuit
10 kW
Figure 2. Noise-Voltage Test Circuit
Rf
15 V
15 V
100 W
-
-
VI
RI
VO
VO
+
+
VI
CL
100 pF
(see Note A)
=
2 kW
2 kW
-15 V
CL
100 pF
(see Note A)
=
-15 V
NOTE A: CL includes fixture capacitance.
NOTE A: CL includes fixture capacitance.
Figure 4. Small-Signal Pulse-Response Test Circuit
Figure 3. Unity-Gain Bandwidth and
Phase-Margin Test Circuit
8
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Excalibur™ LOW-NOISE HIGH-SPEED
PRECISION OPERATIONAL AMPLIFIER
www.ti.com
SLOS511–JUNE 2007
DEVICE INFORMATION
Typical Values
Typical values presented in this data sheet represent the median (50% point) of device parametric performance.
Initial Estimates of Parameter Distributions
In the ongoing program of improving data sheets and supplying more information to our customers, Texas
Instruments has added an estimate of not only the typical values but also the spread around these values.
These are in the form of distribution bars that show the 95% (upper) points and the 5% (lower) points from the
characterization of the initial wafer lots of this new device type (see Figure 5). The distribution bars are shown at
the points where data was actually collected. The 95% and 5% points are used instead of ±3 sigma since some
of the distributions are not true Gaussian distributions.
The number of units tested and the number of different wafer lots used are on all of the graphs where
distribution bars are shown. As noted in Figure 5, there were a total of 835 units from two wafer lots. In this
case, there is a good estimate for the within-lot variability and a possibly poor estimate of the lot-to-lot variability.
This is always the case on newly released products since there can only be data available from a few wafer lots.
The distribution bars are not intended to replace the minimum and maximum limits in the electrical tables. Each
distribution bar represents 90% of the total units tested at a specific temperature. While 10% of the units tested
fell outside any given distribution bar, this should not be interpreted to mean that the same individual devices fell
outside every distribution bar.
SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
5
95% point on the distribution bar
(5% of the devices fell above this point)
V
V
= ±15 V
CC
±
= 0
O
No Load
Sample Size = 835 Units
From 2 Water Lots
4.5
4
90% of the devices were within the upper
and lower points on the distribution bar.
5% point on the distribution bar
(5% of the devices fell below this point)
3.5
3
2.5
−75 −50 −25
0
25 50 75 100 125 150
T
A
− Free-Air Temperature − °C
Figure 5. Sample Graph With Distribution Bars
9
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Excalibur™ LOW-NOISE HIGH-SPEED
PRECISION OPERATIONAL AMPLIFIER
www.ti.com
SLOS511–JUNE 2007
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
6,
VIO
ΔVIO
IIO
Input offset voltage
Distribution
Input offset voltage change
Input offset current
vs Time after power on
7, 8
9
vs Free-air temperature
vs Free-air temperature
vs Common-mode input voltage
vs Differential input voltage
vs Frequency
10
IIB
Input bias current
11
II
Input current
12
VO(PP)
Maximum peak-to-peak output voltage
13, 14
15, 16
17, 18
19
vs Load resistance
vs Free-air temperature
vs Supply voltage
vs Load resistance
vs Frequency
VOM
Maximum (positive/negative) peak output voltage
Large-signal differential voltage amplification
20
AVD
21, 22
23
vs Free-air temperature
vs Frequency
zo
Output impedance
24
CMRR
kSVR
Common-mode rejection ratio
Supply-voltage rejection ratio
vs Frequency
25
vs Frequency
26
vs Supply voltage
vs Elapsed time
27, 28
29, 30
31, 32
33
IOS
Short-circuit output current
vs Free-air temperature
vs Supply voltage
vs Free-air temperature
Small signal
ICC
Supply current
34
35
Voltage-follower pulse response
Large signal
36
Vn
Equivalent input noise voltage
Noise voltage (referred to input)
vs Frequency
37
Over 10-s interval
38
vs Supply voltage
vs Load capacitance
vs Free-air temperature
vs Supply voltage
vs Loadcapacitance
vs Free-air temperature
39
B1
Unity-gain bandwidth
Slew rate
40
SR
41
42
φm
Phase margin
43
44
10
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Excalibur™ LOW-NOISE HIGH-SPEED
PRECISION OPERATIONAL AMPLIFIER
www.ti.com
SLOS511–JUNE 2007
TYPICAL CHARACTERISTICS
DISTRIBUTION
INPUT OFFSET VOLTAGE CHANGE
vs
INPUT OFFSET VOLTAGE
TIME AFTER POWER ON
16
14
12
10
8
12
10
8
1568 Amplifiers Tested From 2 Wafer Lots
V
T
= +15 V
= 25°C
CC
+
A
D Package
6
6
4
50 Amplifiers Tested From 2 Wafer Lots
4
V
T
A
= ±15 V
2
CC
= 25°C
±
2
D Package
0
0
10 20
30
40
50
60
0
− 120 − 90 − 60 − 30
0
30
60
90
120
t − Time After Power On − s
V
IO
− Input Offset Voltage − µV
Figure 6.
Figure 7.
INPUT OFFSET VOLTAGE CHANGE
INPUT OFFSET CURRENT
vs
vs
TIME AFTER POWER ON
FREE-AIR TEMPERATURE
6
5
4
3
2
1
0
30
25
20
15
10
5
V
V
= ±15 V
CC
±
= 0
IC
Sample Size = 833 Units
From 2 Wafer Lots
50 Amplifiers Tested From 2 Wafer Lots
V
T
A
= ±15 V
CC
= 25°C
±
P Package
0
0
20 40 60 80 100 120 140 160 180
t − Time After Power On − s
− 75 − 50 − 25
0
25 50 75 100 125 150
T
A
− Free-Air Temperature − °C
NOTE A: Data at high and low temperatures are
applicable only within the rated operating
free-air temperature ranges of the various
devices.
Figure 8.
Figure 9.
11
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Excalibur™ LOW-NOISE HIGH-SPEED
PRECISION OPERATIONAL AMPLIFIER
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SLOS511–JUNE 2007
TYPICAL CHARACTERISTICS (continued)
INPUT BIAS CURRENT
vs
INPUT BIAS CURRENT
vs
FREE-AIR TEMPERATURE
COMMON-MODE INPUT VOLTAGE
40
35
30
25
20
15
10
5
60
50
V
T
= ±15 V
= 25°C
CC
V
V
= ±15 V
±
CC
±
= 0
A
IC
Sample Size = 836 Units
From 2 Wafer Lots
40
30
20
10
0
−10
−20
0
−12
− 8
− 4
0
4
8
12
−75 −50 −25
0
25 50 75 100 125 150
V
IC
− Common-Mode Input Voltage − V
T
A
− Free-Air Temperature − °C
NOTE A: Data at high and low temperatures are applicable
only within the rated operating free-air
temperatureranges of the various devices.
Figure 10.
Figure 11.
INPUT CURRENT
vs
DIFFERENTIAL INPUT VOLTAGE
MAXIMUM PEAK-TO-PEAK
OUTPUT VOLTAGE
vs
1
FREQUENCY
30
V
V
T
= ±15 V
CC
±
0.8
0.6
V
= ±15 V
±
CC
= 0
IC
R = 2 kΩ
L
= 25°C
A
25
20
15
10
5
0.4
0.2
0
−0.2
−0.4
−0.6
−0.8
−1
T
= 125°C
A
T
A
= −55°C
−1.8
−1.2
V
−0.6
0
0.6
1.2 1.8
− Differential Input Voltage − V
0
ID
10 k
100 k
1 M
10 M
f − Frequency − Hz
NOTE A: Data at high and low temperatures are applicable only
within the rated operating free-air temperature ranges of
the various devices.
Figure 12.
Figure 13.
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Excalibur™ LOW-NOISE HIGH-SPEED
PRECISION OPERATIONAL AMPLIFIER
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SLOS511–JUNE 2007
TYPICAL CHARACTERISTICS (continued)
TLE2037
MAXIMUM PEAK-TO-PEAK
OUTPUT VOLTAGE
vs
MAXIMUM POSITIVE PEAK
OUTPUT VOLTAGE
vs
LOAD RESISTANCE
FREQUENCY
14
12
10
8
30
25
20
15
10
5
V
CC
= ±15 V
±
R
L
= 2 kΩ
6
T
A
= 125°C
4
V
= ±15 V
CC
±
= 25°C
T
A
= −55°C
2
0
T
A
100
1 k
10 k
0
10 k
R
L
− Load Resistance − Ω
100 k
1 M
10 M
100 M
f − Frequency − Hz
NOTE A: Data at high and low temperatures are applicable
only within the rated operating free-air temperature
ranges of the various devices.
Figure 14.
Figure 15.
MAXIMUM NEGATIVE PEAK
OUTPUT VOLTAGE
vs
MAXIMUM POSITIVE PEAK
OUTPUT VOLTAGE
vs
LOAD RESISTANCE
FREE-AIR TEMPERATURE
13.5
13.4
13.3
13.2
13.1
−14
−12
−10
−8
V
R
= ±15 V
CC
±
= 2 kΩ
L
Sample Size = 832 Units
From 2 Wafer Lots
−6
−4
13
V
= ±15 V
= 25°C
CC
±
−2
0
T
A
12.9
−75 −50 −25
0
25 50 75 100 125 150
100
1 k
10 k
R
L
− Load Resistance − Ω
T
A
− Free-Air Temperature − °C
NOTE A: Data at high and low temperatures are applicable
only within the rated operating free-air
temperatureranges of the various devices.
Figure 16.
Figure 17.
13
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Excalibur™ LOW-NOISE HIGH-SPEED
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SLOS511–JUNE 2007
TYPICAL CHARACTERISTICS (continued)
MAXIMUM NEGATIVE PEAK
OUTPUT VOLTAGE
vs
LARGE-SIGNAL DIFFERENTIAL
VOLTAGE AMPLIFICATION
vs
FREE-AIR TEMPERATURE
SUPPLY VOLTAGE
50
40
30
20
10
0
−13
−13.2
−13.4
−13.6
T
A
= 25°C
V
= ±15 V
= 2 kΩ
CC
±
R
R
= 2 kΩ
= 1 kΩ
L
L
L
Sample Size = 831 Units
From 2 Wafer Lots
R
R
L
= 600 Ω
−13.8
−14
−75 −50 −25
0
25 50 75 100 125 150
0
4
8
12
16
20
T
A
− Free-Air Temperature − °C
V
CC
− Supply Voltage − V
±
NOTE A: Data at high and low temperatures are applicable
only within the rated operating free-air temperature
ranges of the various devices.
Figure 18.
Figure 19.
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
LARGE-SIGNAL DIFFERENTIAL
AMPLIFICATION AND PHASE SHIFT
VOLTAGE AMPLIFICATION
vs
LOAD RESISTANCE
50
vs
FREQUENCY
160
140
120
100
80
75°
V
CC
= ±15 V
±
Phase Shift
100°
125°
150°
175°
200°
225°
250°
275°
T
A
= 25°C
40
30
20
10
0
A
VD
60
40
V
= ±15 V
= 2 kΩ
= 100 pF
= 25°C
±
CC
R
C
T
L
L
20
A
0
0.1
100
100 k
100 M
f − Frequency − Hz
100
200
400
1 k
2 k
4 k
10 k
R
L
− Load Resistance − Ω
Figure 20.
Figure 21.
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TLE2027-EP
Excalibur™ LOW-NOISE HIGH-SPEED
PRECISION OPERATIONAL AMPLIFIER
www.ti.com
SLOS511–JUNE 2007
TYPICAL CHARACTERISTICS (continued)
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
LARGE-SIGNAL DIFFERENTIAL
VOLTAGE AMPLIFICATION
vs
AMPLIFICATION AND PHASE SHIFT
vs
FREE-AIR TEMPERATURE
FREQUENCY
6
3
100°
125°
150°
175°
200°
225°
250°
275°
300°
60
50
40
30
V
= ±15 V
±
CC
0
−3
−6
−9
−12
−15
−18
R
= 2 kΩ
= 1 kΩ
L
A
VD
Phase Shift
R
L
V
= ±15 V
= 2 kΩ
= 100 pF
= 25°C
±
CC
R
C
T
L
L
A
10
20
40
70
100
f − Frequency − MHz
−75 −50 −25
0
25 50 75 100 125 150
T
A
− Free-Air Temperature − °C
NOTE A: Data at high and low temperatures are applicable only
within the rated operating free-air temperature ranges
of the various devices.
Figure 22.
Figure 23.
OUTPUT IMPEDANCE
vs
COMMON-MODE REJECTION RATIO
vs
FREQUENCY
FREQUENCY
140
100
10
1
V
T
= ±15 V
V
T
= ±15 V
±
±
CC
CC
= 25°C
= 25°C
A
120
100
80
60
40
20
0
A
A
VD
= 100
See Note A
A
VD
= 10
−10
−100
10
100
1 k
10 k 100 k 1 M 10 M 100 M
10
100
1 k
10 k 100 k 1 M 10 M 100 M
f − Frequency − Hz
f − Frequency − Hz
NOTE A: For this curve, A = 1
VD
Figure 24.
Figure 25.
15
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Excalibur™ LOW-NOISE HIGH-SPEED
PRECISION OPERATIONAL AMPLIFIER
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SLOS511–JUNE 2007
TYPICAL CHARACTERISTICS (continued)
SUPPLY-VOLTAGE REJECTION RATIO
SHORT-CIRCUIT OUTPUT CURRENT
vs
vs
FREQUENCY
SUPPLY VOLTAGE
140
120
100
80
−42
−40
−38
−36
−34
−32
−30
V
= ±15 V
±
CC
V
V
T
A
= 100 mV
= 0
= 25°C
ID
T
A
= 25°C
O
P Package
k
SVR−
60
k
SVR+
40
20
0
10
0
2
4
6
8
10 12 14 16 18 20
100
1 k
10 k 100 k 1 M 10 M 100 M
V
CC
− Supply Voltage − V
f − Frequency − Hz
±
Figure 26.
Figure 27.
SHORT-CIRCUIT OUTPUT CURRENT
SHORT-CIRCUIT OUTPUT CURRENT
vs
vs
ELAPSED TIME
SUPPLY VOLTAGE
−45
−43
−41
−39
−37
−35
44
42
40
38
36
34
32
30
V
= ±15 V
±
CC
V
V
T
A
= −100 mV
= 0
= 25°C
ID
V
V
= 100 mV
= 0
= 25°C
ID
O
O
T
A
P Package
P Package
0
2
4
6
8
10 12 14 16 18 20
0
30
60
90
120
150
180
V
CC
− Supply Voltage − V
±
t − Elapsed Time − s
Figure 28.
Figure 29.
16
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Excalibur™ LOW-NOISE HIGH-SPEED
PRECISION OPERATIONAL AMPLIFIER
www.ti.com
SLOS511–JUNE 2007
TYPICAL CHARACTERISTICS (continued)
SHORT-CIRCUIT OUTPUT CURRENT
SHORT-CIRCUIT OUTPUT CURRENT
vs
vs
ELAPSED TIME
FREE-AIR TEMPERATURE
−48
−44
−40
−36
−32
−28
−24
44
V
= ±15 V
±
CC
V
V
V
= ±15 V
±
CC
V
V
= 100 mV
= 0
= 25°C
ID
= 100 mV
= 0
ID
O
O
42
40
38
36
34
T
A
P Package
P Package
−75 −50 −25
0
25 50 75 100 125 150
0
30
60
90
120
150
180
T
A
− Free-Air Temperature − °C
t − Elapsed Time − s
NOTE A: Data at high and low temperatures are applicable only
within the rated operating free-air temperature ranges
of the various devices.
Figure 30.
Figure 31.
SHORT-CIRCUIT OUTPUT CURRENT
SUPPLY CURRENT
vs
vs
FREE-AIR TEMPERATURE
SUPPLY VOLTAGE
46
42
38
34
30
26
6
V
= 0
O
V
= ±15 V
±
CC
No Load
V
ID
V
O
= −100 mV
= 0
5
4
3
2
1
0
T
= 125°C
A
P Package
T
A
= 25°C
T
A
= −55°C
−75 −50 −25
0
25 50 75 100 125 150
0
2
4
6
8
10 12 14 16 18 20
V
CC
− Supply Voltage − V
T
A
− Free-Air Temperature − °C
±
NOTE A: Data at high and low temperatures are applicable
only within the rated operating free-air temperature
ranges of the various devices.
NOTE A: Data at high and low temperatures are applicable only
within the rated operating free-air temperature ranges
of the various devices.
Figure 32.
Figure 33.
17
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Excalibur™ LOW-NOISE HIGH-SPEED
PRECISION OPERATIONAL AMPLIFIER
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SLOS511–JUNE 2007
TYPICAL CHARACTERISTICS (continued)
VOLTAGE-FOLLOWER
SMALL-SIGNAL
PULSE RESPONSE
SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
5
4.5
4
100
50
V
R
= ±15 V
= 2 kΩ
= 100 pF
= 25°C
V
V
= ±15 V
±
CC
±
CC
= 0
L
L
O
C
T
No Load
Sample Size = 836 Units
From 2 Wafer Lots
A
See Figure 4
0
3.5
3
−50
−100
2.5
−50 −25
0
25 50 75 100 125 150
−75
0
200
400
600 800
1000
T
− Free-Air Temperature − °C
A
t − Time − ns
NOTE A: Data at high and low temperatures are applicable
only within the rated operating free-air temperature
ranges of the various devices.
Figure 34.
Figure 35.
EQUIVALENT INPUT NOISE VOLTAGE
VOLTAGE-FOLLOWER
LARGE-SIGNAL
PULSE RESPONSE
vs
FREQUENCY
10
8
15
V
= ±15 V
±
CC
V
= ±15 V
= 2 kΩ
= 100 pF
= 25°C
±
CC
R
= 20 Ω
= 25°C
R
C
T
S
L
L
T
A
10
5
See Figure 2
Sample Size = 100 Units
From 2 Wafer Lots
A
See Figure 1
6
0
4
−5
−10
−15
2
0
1
10
100
1 k
10 k
100 k
0
5
10
15
20
25
f − Frequency − Hz
t − Time − µs
Figure 36.
Figure 37.
18
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Excalibur™ LOW-NOISE HIGH-SPEED
PRECISION OPERATIONAL AMPLIFIER
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SLOS511–JUNE 2007
TYPICAL CHARACTERISTICS (continued)
NOISE VOLTAGE
(REFERRED TO INPUT)
OVER A 10-S INTERVAL
UNITY-GAIN BANDWIDTH
vs
SUPPLY VOLTAGE
20
18
16
14
12
10
50
R
C
T
= 2 kΩ
= 100 pF
= 25°C
L
L
V
= ±15 V
±
CC
40
30
f = 0.1 to 10 Hz
T
A
A
= 25°C
See Figure 3
20
10
0
−10
−20
−30
−40
−50
0
2
4
6
8
10
0
2
4
6
8
10 12 14 16 18 20 22
t − Time − s
| V
CC
| − Supply Voltage − V
±
Figure 38.
Figure 39.
SLEW RATE
vs
UNITY-GAIN BANDWIDTH
vs
FREE-AIR TEMPERATURE
LOAD CAPACITANCE
16
3
2.8
2.6
2.4
2.2
2
V
= ±15 V
= 2 kΩ
= 25°C
±
CC
R
T
L
A
See Figure 3
12
8
V
CC
= ±15 V
±
4
A
R
C
= 1
= 2 kΩ
= 100 pF
VD
L
L
See Figure 1
0
− 75 − 50 − 25
0
25
50
75 100 125 150
100
1000
10000
C
L
− Load Capacitance − pF
T
A
− Free-Air Temperature − °C
NOTE A: Data at high and low temperatures are applicable only
within the rated operating free-air temperature ranges
of the various devices.
Figure 40.
Figure 41.
19
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Excalibur™ LOW-NOISE HIGH-SPEED
PRECISION OPERATIONAL AMPLIFIER
www.ti.com
SLOS511–JUNE 2007
TYPICAL CHARACTERISTICS (continued)
PHASE MARGIN
vs
PHASE MARGIN
vs
LOAD CAPACITANCE
SUPPLY VOLTAGE
60°
50°
58°
56°
54°
52°
50°
48°
46°
44°
42°
V
= ±15 V
= 2 kΩ
= 25°C
R
C
T
= 2 kΩ
= 100 pF
= 25°C
±
CC
L
L
R
T
L
A
A
See Figure 3
See Figure 3
40°
30°
20°
10°
0°
0
2
4
6
8
10 12 14 16 18 20 22
100
1000
C
L
− Load Capacitance − pF
| V
CC
| − Supply Voltage − V
±
Figure 42.
Figure 43.
PHASE MARGIN
vs
FREE-AIR TEMPERATURE
65°
60°
55°
50°
45°
40°
35°
V
= ±15 V
= 2 kΩ
= 25°C
±
CC
R
T
L
A
See Figure 3
−75 −50 −25
0
25
50
75 100 125 150
T
A
− Free-Air Temperature − °C
NOTE A: Data at high and low temperatures are applicable only
within the rated operating free-air temperature ranges
of the various devices.
Figure 44.
20
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TLE2027-EP
Excalibur™ LOW-NOISE HIGH-SPEED
PRECISION OPERATIONAL AMPLIFIER
www.ti.com
SLOS511–JUNE 2007
APPLICATION INFORMATION
Input Offset Voltage Nulling
The TLE2027 series offers external null pins that can be used to further reduce the input offset voltage. The
circuits of Figure 45 can be connected as shown if the feature is desired. If external nulling is not needed, the
null pins may be left disconnected.
1 kW
VCC+
10 kW
4.7 kW
VCC+
4.7 kW
IN-
IN-
-
-
OUT
OUT
IN+
+
IN +
+
VCC-
(a) STANDARD ADJUSTMENT
VCC-
(b) ADJUSTMENT WITH IMPROVED SENSITIVITY
Figure 45. Input Offset Voltage Nulling Circuits
Voltage-Follower Applications
The TLE2027 circuitry includes input-protection diodes to limit the voltage across the input transistors; however,
no provision is made in the circuit to limit the current if these diodes are forward biased. This condition can occur
when the device is operated in the voltage-follower configuration and driven with a fast, large-signal pulse. It is
recommended that a feedback resistor be used to limit the current to a maximum of 1 mA to prevent degradation
of the device. Also, this feedback resistor forms a pole with the input capacitance of the device. For feedback
resistor values greater than 10 kΩ, this pole degrades the amplifier phase margin. This problem can be
alleviated by adding a capacitor (20 pF to 50 pF) in parallel with the feedback resistor (see Figure 46).
CF = 20 to 50 pF
IF £ 1 mA
RF
VCC
-
VO
VI
+
VCC-
Figure 46. Voltage Follower
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TLE2027-EP
Excalibur™ LOW-NOISE HIGH-SPEED
PRECISION OPERATIONAL AMPLIFIER
www.ti.com
SLOS511–JUNE 2007
APPLICATION INFORMATION (continued)
Macromodel Information
Macromodel information provided was derived using Microsim Parts™, the model generation software used with
Microsim PSpice™. The Boyle macromodel (see Note and Figure 47) and subcircuit (see Figure 48) were
generated using the TLE202x7 typical electrical and operating characteristics at 25°C. Using this information,
output simulations of the following key parameters can be generated to a tolerance of 20% (in most cases):
•
•
•
•
•
•
Maximum positive output voltage swing
Maximum negative output voltage swing
Slew rate
Quiescent power dissipation
Input bias current
•
•
•
•
•
•
Gain-bandwidth product
Common-mode rejection ratio
Phase margin
DC output resistance
AC output resistance
Open-loop voltage amplification
Short-circuit output current limit
NOTE:
G. R. Boyle, B. M. Cohn, D. O. Pederson, and J. E. Solomon, "Macromodeling of
Integrated Circuit Operational Amplifiers", IEEE Journal of Solid-State Circuits, SC-9,
353 (1974).
99
3
+
dln
91
VCC+
egnd
9
92
fb
rc1
11
rc2
12
-
c1
+
-
ro2 90
hlim
rp
+
-
+ dip
vb
1
vip
IN+
IN-
vin
+
-
-
-
+
vc
53
dc
Q1
Q2
r2
C2
6
7
2
dp
13
+
14
ree
cee
vlim
ga
gcm
re1
re2
-
8
10
ro1
5
lee
de
54
VCC-
-
+
4
ve
OUT
Figure 47. Boyle Macromodel
q2
r2
12
6
1
9
14 qx
.subckt TLE2027 1 2 3 4 5
*
100.0E3
530.5
530.5
−393.2
−393.2
3.571E6
25
rc1
rc2
re1
re2
ree
ro1
ro2
rp
3
11
12
10
10
99
5
c1
11
6
12
7
4.003E-12
3
c2
20.00E-12
13
14
10
8
dc
5
53
5
dz
de
54
90
92
4
dz
dlp
dln
dp
91
90
3
dz
dx
7
99
4
25
dz
3
8.013E3
egnd
99
0
poly(2) (3,0)
vb
9
0
dc
0
(4,0) 0 5 .5
vc
3
53
4
dc 2.400
dc 2.100
fb
7
99
poly(5) vb vc ve
ve
54
7
vlp vln 0 954.8E6 −1E9 1E9 1E9 −1E9
vlim
vlp
vln
8
dc
0
ga
6
0
0
6
11 12
10 99
91
0
0
dc 40
dc 40
2.062E-3
gcm
92
.modeldx D(Is=800.0E-18)
.modelqx NPN(Is=800.0E-18
Bf=7.000E3)
531.3E-12
iee
10
90
11
4
0
2
dc 56.01E-6
vlim 1K
hlim
.ends
q1
13 qx
Figure 48. TLE2027 Macromodel Subcircuit
22
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PACKAGE OPTION ADDENDUM
www.ti.com
18-Sep-2008
PACKAGING INFORMATION
Orderable Device
TLE2027MDREP
V62/06674-01XE
Status (1)
ACTIVE
ACTIVE
Package Package
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Qty
Type
Drawing
SOIC
D
8
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
SOIC
D
8
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF TLE2027-EP :
Catalog: TLE2027
Military: TLE2027M
•
•
NOTE: Qualified Version Definitions:
Catalog - TI's standard catalog product
Military - QML certified for Military and Defense Applications
•
•
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jul-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TLE2027MDREP
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jul-2012
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SOIC
SPQ
Length (mm) Width (mm) Height (mm)
367.0 367.0 35.0
TLE2027MDREP
D
8
2500
Pack Materials-Page 2
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