TAS5101 [TI]

TRUE DIGITAL STEREO AUDIO AMPLIFIER WITH PWM STEREO POWER OUTPUT STAGE; 与PWM立体声功率输出级真正的数字立体声音频放大器
TAS5101
型号: TAS5101
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

TRUE DIGITAL STEREO AUDIO AMPLIFIER WITH PWM STEREO POWER OUTPUT STAGE
与PWM立体声功率输出级真正的数字立体声音频放大器

音频放大器 输出元件
文件: 总14页 (文件大小:187K)
中文:  中文翻译
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TAS5101  
SLES039 – JUNE 2002  
TRUE DIGITAL STEREO AUDIO AMPLIFIER  
WITH PWM STEREO POWER OUTPUT STAGE  
D
D
Internet Music Appliance  
Mini/Micro Component Systems  
FEATURES  
D
2 × 15 W High-Quality Digital Amplifier Power  
Stage  
DESCRIPTION  
D
D
D
Single-Ended Output  
>95-dB Dynamic Range (TDAA System)  
The TAS5101 is a high-performance true digital stereo  
audio amplifier (TDAA) Power Stage, designed to drive  
2 × 15 watts per channel. The TAS5101 incorporates  
TI’s equibitt technology and is used in conjunction with  
a Digital Audio PWM processor (TAS50xx) to deliver  
high-power, true digital audio amplification. The  
efficiency of this digital amplifier can be greater than  
90%, reducing the size of both the power supplies and  
heat sinks needed. The TAS5101 accepts a stereo  
PWM 3.3V input and controls the switching of an  
internal CMOS H-bridge.  
THD+N < 0.1% (1 kHz, 1 W to 15 W RMS  
Into 4 )  
D
Power Efficiency > 90% Into 4-to 8-Load  
D
Low Profile, SMD 32-Pin PowerPAD Package  
Requires No Heat-Sink When Using  
Recommended Layout  
D
D
D
D
2 × 15-W RMS Continuous Power Into 4 Ω  
Self-Protecting Design  
3.3-V Digital Interface  
When used with the TAS50xx PWM Processor, system  
performance of less than 0.09% THD is attainable.  
Over-current protection, over-temperature, and  
under-voltage protections are built into the TAS5101,  
safeguarding the H-bridge and speakers against output  
shorts, over-voltage conditions, and other fault  
conditions that could damage the system.  
EMI Compliant When Used With  
Recommended System Design  
APPLICATIONS  
D
Digital TV Audio Amplifier  
D
Car Audio Amplifiers and Head Units  
TYPICAL TDAA STEREO AUDIO SYSTEM  
L-C  
Filter  
Digital Audio  
TAS3001  
TAS3103  
DSP  
TAS5010  
TAS5101  
DIR1703  
1394  
L-C  
Filter  
Volume  
EQ  
DRC  
Bass  
Treble  
Serial Audio Input Port  
Internal PLL  
PCM–PWM Modulator  
2 × 15 W Single-Ended  
H-Bridge Power Devices  
NOTE:  
The TAS5000 in NOT recommended for use with the TAS5101  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PowerPAD and Equibit are trademarks of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
Copyright 2002, Texas Instruments Incorporated  
1
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TAS5101  
SLES039 JUNE 2002  
terminal assignments  
The TAS5101 is offered in a thermally enhanced 32-pin HTSSOP surface-mount package (DAP).  
DAP PACKAGE  
(TOP VIEW)  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
PWM_AP  
PWM_AM  
ERR1  
PVDDA2  
2
LDROUTA  
BOOTSTRAPA  
PVDDA1  
3
4
ERR0  
SHUTDOWN  
DVDD  
5
PVDDA1  
6
OUTPUTA  
OUTPUTA  
PVSS  
7
DVSS  
DVSS  
DVSS  
8
9
PVSS  
10  
11  
12  
13  
14  
15  
16  
VRFILT  
BIAS_A  
BIAS_B  
HiZ  
RESET  
PWM_BM  
PWM_BP  
OUTPUTB  
OUTPUTB  
PVDDB1  
PVDDB1  
BOOTSTRAPB  
LDROUTB  
PVDDB2  
ordering information  
T
PACKAGE  
TAS5101DAP  
TAS5101IDAP  
TAPE and Reel  
TAS5101DAPR  
TAS5101IDAPR  
A
0°C to 70°C  
40°C to 85°C  
references  
TAS5010 Digital Audio PWM Processor Data Manual TI Literature Number SLAS328  
System Design Considerations for True Digital Audio Power Amplifiers TI Literature Number SLAA117  
Digital Audio Measurements TI Literature Number SLAA114  
PowerPAD Thermally Enhanced Package TI Literature Number SLMA002  
TAS5101_SE Application Report TI Literature Number SLEA001  
suggested system block diagrams  
See application note SLAA117 for more details.  
L-C  
Filter  
Digital Audio  
TAS3001  
TAS3103  
DSP  
TAS5010  
TAS5101  
DIR1703  
1394  
L-C  
Filter  
Digital Parametric EQ Serial Audio Input Port  
2 × 1/2 H-Bridge  
Volume  
DRC  
Internal PLL  
Bass  
Treble  
Figure 1. System #1: Stereo Configuration With TAS3001 Digital Audio Processor  
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TAS5101  
SLES039 JUNE 2002  
functional block diagram  
1/2 H-Bridge  
LDR  
OUTPUTA  
PWM_AP  
PWM_AM  
DIFF  
RCVR  
OUTPUTA  
Boot Strap  
Gate Drive  
PVSS  
BIAS_A  
HiZ  
RESET  
Control/Sense  
Circuit  
Bandgap  
Reference  
SHUTDOWN  
ERR1  
ERR0  
LDROUTB  
PVDDB2  
VRFILT  
BOOTSTRAPB  
PVDDB1  
1/2 H-Bridge  
PVDDB1  
BIAS_B  
LDR  
DIFF  
PWM_BM  
PWM_BP  
OUTPUTB  
OUTPUTB  
Boot Strap  
Gate Drive  
RCVR  
3
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TAS5101  
SLES039 JUNE 2002  
Terminal Functions  
TERMINAL  
NAME  
I/O  
DESCRIPTION  
NO.  
11  
BIAS_A  
I
I
Connect external resistor to DVSS. See application note SLAA117  
Connect external resistor to DVSS. See application note SLAA117  
Bootstrap capacitor pin for H-bridge A  
BIAS_B  
12  
BOOTSTRAPA  
BOOTSTRAPB  
DVDD  
30  
O
O
I
19  
Bootstrap capacitor pin for H-bridge B  
6
3.3-V digital voltage supply for logic  
DVSS  
7, 8, 9  
I
Digital ground for logic is internally connected to PVSS. All three pins must be tied together but not  
connected externally to PVSS. See Figure 5.  
ERR1  
3
4
O
O
O
O
O
O
I
Error/warning report indicator. This output is open drain with internal pullup resistor.  
Error/warning report indicator. This output is open drain with internal pullup resistor.  
Low voltage drop-out regulator output A (not to be used to supply current to external circuitry)  
Low voltage drop-out regulator output B (not to be used to supply current to external circuitry)  
H-bridge output A  
ERR0  
LDROUTA  
LDROUTB  
OUTPUTA  
OUTPUTB  
PVDDA1  
PVDDA2  
PVDDB1  
PVDDB2  
PVSS  
31  
18  
26, 27  
22, 23  
28, 29  
32  
H-bridge output B  
High voltage power supply, H-bridge A  
I
High voltage power supply for low-dropout voltage regulator A-side  
High voltage power supply, H-bridge B  
20, 21  
17  
I
I
High voltage power supply for low-dropout voltage regulator B-side  
High voltage power supply ground  
24, 25  
13  
I
HiZ  
I
HiZ = 0, when asserted, the H-bridge output is set to high-impedance mode  
PWM input A(+)  
PWM_AP  
PWM_AM  
PWM_BP  
PWM_BM  
RESET  
1
I
2
I
PWM input A()  
16  
I
PWM input B(+)  
15  
I
PWM input B()  
14  
I
Reset and mute mode = 0, normal mode = 1, when in reset mode, H-bridge MOSFETs are in low-low  
output state. Asserting the RESET signal low causes all fault conditions to be cleared.  
SHUTDOWN  
5
O
Device is in shutdown due to fault condition, normal mode = 1, shutdown = 0. The shutdown  
condition can be cleared by asserting the RESET signal. This output is open drain with internal  
pullup resistor.  
VRFILT  
10  
O
A filter capacitor should be added between VRFILT and DVSS pins.  
NOTE: The four PWM inputs: PWM_AP, PWM_AM, PWM_BP, and PWM_BM must always be connected to the TAS5010 output pins, and never  
left floating. Floating PWM input pins will cause an illegal PWM input state signal to be asserted.  
Dualpins:OUTPUTA, OUTPUTB, PVDDA1andPVDDB1musthavebothpinsconnectedexternallytothesamepointonthecircuitboard,  
respectively. Both PVSS pins must also be connected together externally. These multiple pins are for the high current DMOS output  
devices. Failure to connect all the multiple pins to the same respective node will result in excessive current flow in the internal bond wires  
andcan cause the device to fail. All electrical characteristics arespecifiedandmeasuredwithallofthemultiplepinsconnectedtothesame  
node, respectively.  
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TAS5101  
SLES039 JUNE 2002  
functional description  
PWM H-bridge state control  
The digital interface control signals consists of PWM_AP, PWM_AM, PWM_BP, and PWM_BM. These signals  
are a complementary differential signal format for the A-side H-bridge and the B-side H-bridge.  
bootstrapped gate drive  
The TAS5101 includes 2 dedicated bootstrapped power supplies. A bootstrap capacitor is connected between  
the individual bootstrap pin and the associated output as described in the application note SLAA117. For  
example, a capacitor will be connected between the BOOTSTRAPA pin and OUTPUTA pin, and another  
capacitor will be connected between the BOOTSTRAPB pin and the OUTPUTB pin. The bootstrap power  
supply minimizes the number of high voltage power supply levels externally supplied to the system while  
providing a low noise supply level for driving the high-side N-channel DMOS transistors. See application note  
SLAA117 for details.  
low-dropout voltage regulator  
Two on-chip low-dropout voltage regulators (LDO) are provided to minimize the number of external power  
supplies needed for the system. These voltage regulators are for internal circuits only and cannot be used for  
external circuitry. Each LDO is dedicated to an H-bridge and its gate driver. An LDO output capacitor is  
connected between the individual LDO output pin and the associated output return as described in the  
application note SLAA117. For example, a capacitor will be connected between the LDROUTA pin and PVSS  
pin, and another capacitor will be connected between the LDROUTB pin and PVSS pin. This capacitor is usually  
0.1 µF.  
high-current H-bridge output stage  
The positive outputs of the H-bridge are the two OUTPUTA pins. The negative outputs of the H-bridge are the  
two OUTPUTB pins. The logic for the input command to H-bridge outputs is described in the H-bridge output  
mapping section below. When the TAS5101 is in the normal mode, as seen in the H-bridge output mapping  
tables, the outputs are decoded from the inputs. However, the TAS5101 is immediately shut down if any of the  
followingerror conditions occur: over-current, over-temperature, low regulator output voltage, or an illegal PWM  
input state is applied. For these conditions, the outputs are set to the appropriate disabled state as specified  
in the H-bridge output mapping section, and the SHUTDOWN pin is set low.  
H-bridge output mapping  
The A-side and B-side H-bridge output is designed to the following truth table:  
INPUTS  
OUTPUTS  
OUTPUTA/B  
DESCRIPTION  
RESET  
HiZ  
X
0
PWM_AP/BP PWM_AM/BM SHUTDOWN  
X
X
0
1
1
1
1
X
X
X
0
0
1
1
X
X
X
0
1
0
1
0
1
1
0
1
1
0
0 or Hi-Z  
Shutdown  
High Impedance  
Low  
Hi-Z  
0
1
1
0
Low  
1
0
Normal  
1
1
Normal  
1
0
Low  
Output is 0 for low voltage, over temperature, and illegal input. Hi-Z is for over current.  
5
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TAS5101  
SLES039 JUNE 2002  
control/sense circuitry  
The control/sense circuitry consists of the following 3.3-V logic level pins: HiZ, RESET, ERR0, ERR1, and  
SHUTDOWN. The active-low HiZ input pin powers down all internal circuitry and forces the H-bridge outputs  
to the Hi-Z state. When the HiZ pin is low, the open drain ERR0, ERR1, and SHUTDOWN pins are also disabled  
so that their outputs can be pulled high. The active-low RESET input pin forces the H-bridge outputs to the  
low-low state and resets the over-current shutdown latch. The HiZ pin overrides the RESET pin. The ERR0,  
ERR1, and SHUTDOWN outputs indicate the following conditions in the TAS5101 as shown in the table below.  
These three outputs are open-drain connections with internal pullup resistors so that wire-ORed connections  
can be made by the user with other external control devices. The short circuit protect error condition will latch  
the TAS5101 in this shutdown state and force the H-bridge outputs to the Hi-Z state until the device is reset by  
means of the RESET pin. The illegal PWM input state, over-temperature, and low regulator voltage error  
conditions will not latch the device in the shutdown condition. Instead the H-bridge outputs are forced to the  
low-low state and the TAS5101 will return to normal operation as soon as the error condition ends. Loss of  
clocking PWM signal is also considered an illegal PWM input state.  
SHUTDOWN  
ERR1  
ERR0  
FUNCTION  
Illegal PWM input state  
Short circuit protect (latch)  
Over temperature protect  
Low regulator voltage protect  
Reserved  
OUTPUTA  
Low  
OUTPUTB  
Low  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Hi-Z  
Hi-Z  
Low  
Low  
Low  
Low  
Reserved  
High temperature warning  
Normal operation  
Normal  
Normal  
Normal  
Normal  
6
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TAS5101  
SLES039 JUNE 2002  
device operation  
power sequences  
system power-up/power-down sequencing  
The recommended power-up/power-down sequence is shown in Figure 3. For proper operation the RESET  
signal should be kept LOW when both DVDD and output power (PVDDA1, PVDDA2, PVDDB1, and PVDDB2)  
are being applied. The RESET signal should remain LOW for at least 1 ms after output power is applied.  
DVDD  
> 1 ms  
> 1 ms  
PVDDA1  
PVDDA2  
PVDDB1  
PVDDB2  
> 100 ms  
RESET/HiZ  
NOTE: This power-up/power-down sequence will ensure that there are no device reliability issues. However, audio artifacts during power cycling  
may occur (see TAS5101_SE Application Report (SLEA001) for more information).  
Figure 2. Power-Up/Power-Down Sequence  
RESET function  
The device is put into a reset condition when the (active low) RESET signal is asserted. While in the reset state,  
the input H-bridge control signals consisting of PWM_AP, PWM_AM, PWM_BP, and PWM_BM are ignored, and  
the H-bridge MOSFETs are placed in a state where OUTPUTA and OUTPUTB are both low. Asserting the  
RESET signal low also causes the short circuit protection latch to be reset. The RESET and HiZ signals are  
normally connected to the VALID signal from the TAS5010, when used in a single-ended configuration.  
HiZ function  
The HiZ function places the output MOSFETs in a high-impedance state when this function is asserted by  
placing pin 13 at logic low. This function is usually used in conjunction with the RESET function during power  
on and off to reduce or eliminate pops and clicksassociated with powering the amplifier.  
reinitialization sequence  
Proper initial conditions for this device include asserting the RESET and HiZ signals until the reset operation  
has completed (1 ms). Additionally, when using this device with the TAS5010 controller, this function can be  
accomplished by asserting the reset pin on the TAS5010 during the reset sequence (see Figure 3).  
audio application considerations  
power supply decoupling  
Power supply decoupling and layout optimization information should be obtained by following the detailed  
information in the application note SLEA005.  
optimal power transfer for H-bridge  
The TAS5101 is a power H-bridge that is designed to deliver 2 × 15 W/rms into loads of 4 in a single-ended  
configuration. Rather than requiring the usual heatsink, the package is designed to deliver this wattage by  
careful layout as described in the application note SLAA117. Careful attention must be given to the value of the  
high-voltage power supply level for a given load resistance. See recommended operating conditions.  
7
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TAS5101  
SLES039 JUNE 2002  
audio application considerations (continued)  
reconstruction output filter  
An output reconstruction filter is required between the H-bridge outputs and the loudspeaker load. This second  
order low-pass filter passes the audio information to the loudspeaker, while filtering out the high frequency  
out-of-band information contained in the H-bridge output PWM pulses. The values of the L and C components  
selected are dependent on the loudspeaker load impedance. See application note SLAA117.  
fault indicator usage  
TheTAS5101isaself-protectingdevicethatprovidesdevicefaultreporting, includingover-temperatureprotect,  
under-voltage lockout (low-regulator voltage), and short circuit protection. The short circuit protection protects  
against short circuits that may occur at the loudspeaker load when configured according to the application note  
SLAA117. The TAS5101 is not recommended for driving loads less than 4 Ω, since the internal current limit  
protection might be activated.  
An under-voltage lockout signal occurs when an insufficient voltage level is present on the LDROUTA or  
LDROUTBpins. During this condition gate drive levels are not sufficient for driving the power MOSFETs. Normal  
operationisresumedwhentheminimumproperLDROUTAorLDROUTBlevelisobtained, andthelowregulator  
voltage protect signal is de-asserted. See the control/sense circuitry section for error and warning conditions.  
A high temperature warning signal is asserted on pin ERR0 when the device temperature exceeds 125°C  
typical.  
If the internal device temperature exceeds 150°C typical, the over temperature protect signal is asserted and  
the TAS5101 is shut down. The device will re-enable once the temperature drops to 125°C typical. See the  
control/sense circuitry section for error and warning conditions.  
Detection of an illegal PWM input state or the loss of a clocking PWM input signal will cause an illegal PWM input  
state signal to be asserted on the ERR1and ERR0 pins and will set the SHUTDOWN pin to the low state.  
absolute maximum ratings over operating free-air temperature (unless otherwise noted)  
DC supply voltage range: DVDD to DVSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to 5.5 V  
PWM_AP, PWM_AM, PWM_BP, PWM_BM . . . . . . . . . . . . . . . . . 0.3 V to DVDD + 0.3 V  
RESET, HiZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to DVDD + 0.3 V  
PVDDA1 to PVSS, PVDDB1 to PVSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to 28 V  
PVDDA2 to PVSS, PVDDB2 to PVSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to 28 V  
Output DMOS drain-to-source breakdown voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 V  
Operating junction temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C to 150°C  
J
Storage temperature range, T  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C to 150°C  
stg  
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C  
Stresses beyond those listed under absolute maximum ratingsmay cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditionsis not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
8
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TAS5101  
SLES039 JUNE 2002  
recommended operating conditions (nominal output power = 2 × 15 W (RMS), T = 25°C)  
A
thermal data  
PARAMETER  
MIN NOM  
150  
MAX  
UNIT  
°C  
Shutdown junction temperature, T  
J(SD)  
Warning junction temperature, T  
125  
°C  
J(W)  
Commercial  
0
25  
25  
70  
85  
Operating ambient temperature, T  
°C  
A
Industrial  
40  
Thermal resistance junction-to-ambient, θ  
2 oz. trace and copper pad with solder  
2 oz. trace and copper pad without solder  
2 oz. trace and copper pad without solder  
23.5  
0.32  
44.3  
°C/W  
°C/W  
°C/W  
ja  
ja  
Thermal resistance junction-to-case, θ  
jc  
Thermal resistance junction-to-ambient, θ  
One of the most influential components on the thermal performance of a package is board design. In order to take full advantage of the heat  
dissipating abilities of the PowerPAD packages, a board must be used that acts similar to a heat sink and allows for the use of the exposed (and  
solderable),deepdownsetpad. SeeAppendixAofthePowerPADThermallyEnhancedPackageapplicationnote, TIliteraturenumberSLMA002  
and the Thermal Design of the PowerPad PCB Layout section of the System Design Considerations for True Digital Audio Power Amplifiers  
application note, TI literature number SLAA117.  
R = 4 to 8 Ω  
L
PARAMETER  
MIN NOM  
MAX  
3.6  
UNIT  
Digital  
DVDD to DVSS  
3
16.5  
16.5  
10.5  
10.5  
3.3  
26.5  
26.5  
V
PVDDA2 to PVSS  
PVDDB2 to PVSS  
PVDDA2 to PVSS  
PVDDB2 to PVSS  
28  
28  
Supply voltage  
Regulator  
V
}
}
16.5  
16.5  
If PVDD is greater than 26.5 V, 15 Watts per channel is still the maximum specified continuous output power.  
If using a PVVD power supply less than 16.5 V, connect LDROUTA to PVDDA2 and connect LDROUTB to PVDDB2. Under this condition  
H-Bridge forward on-state resistance is increased. This will increase internal power dissipation. Maximum output power may need to be reduced  
to meet thermal conditions.  
maximum available power at common load impedance for DAP package unclipped (0 dB) level  
LOAD IMPEDANCE  
PVDAA1/PVDDB1  
(VDC)  
APPROXIMATE MAX OUTPUT POWER  
(W)  
THD+N AT MAX POWER AND 1 kHz INPUT  
()  
4
6
8
26.5  
27  
15  
< 0.1%  
< 0.09%  
< 0.09%  
12.85  
9.64  
27  
Dependent on board design and component selection.  
9
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TAS5101  
SLES039 JUNE 2002  
static digital specifications  
RESET, HiZ, PWM_AP, PWM_AM, PWM_BP, PWM_BM, T = 25°C, DVDD = 3.3 V  
A
PARAMETERS  
MIN  
MAX  
UNIT  
V
High-level input voltage, V  
IH  
2
Low-level input voltage, V  
Input leakage current  
0.8  
10  
V
IL  
10  
µA  
ERR0, ERR1, SHUTDOWN, (open drain with internal pullup resistor) T = 25°C, DVDD = 3.3 V)  
A
PARAMETERS  
MIN  
MAX  
UNIT  
kΩ  
Internal pullup resistors from SHUTDOWN, ERR0, ERR1 to DVDD  
15  
Low-level output voltage (I = 4 mA), V  
0.4  
V
O
OL  
TAS5010/TAS5101 system performance measured at the speaker terminals  
See the TI Literature Number SLAA117 for TAS5010/TAS5101 system performance.  
electrical characteristics  
supply, T = 25°C (F  
= 384 kHz, OUTPUTA and OUTPUTB not connected, DVDD = 3.3 V,  
A
switching  
PVDDA1 = 26.5 V, PVDDB1 = 26.5 V, PVDDA2 = 26.5 V, PVDDB2 = 26.5 V, 50% input duty cycle)  
PARAMETER  
TYP  
MAX  
UNIT  
DVDD  
Operating  
2
mA  
Supply current  
PVDDA1+PVDDB1+  
PVDDA2+PVDDB2  
Operating  
20  
mA  
13-kresistor from BIAS_A (pin 11) to DVSS and 13-kresistor from BIAS_B (pin 12) to DVSS.  
H-Bridge transistors, PVDDA2 = PVDDB2 = 22 V, DVDD = 3.3 V, T = 25°C (unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
HiZ = 0, Hi-Z state  
= 2.5 A, PWM_AP = PWM_BP = 0,  
MIN  
TYP  
MAX  
UNIT  
Drain-to-source breakdown voltage  
I
I
= 1 mA,  
28  
V
D
Forward on-state resistance, low-side drivers  
OUTPUTA and OUTPUTB to PVSS  
SINK  
0.2  
0.2  
See Notes 2, 3, and 4, PWM_AM = PWM_BM = 1  
= 2.5 A, PWM_AP = PWM_BP = 1,  
See Notes 2, 3, and 5, PWM_AM = PWM_BM = 0  
Forward on-state resistance, high-side drivers  
PVDDA1 to OUTPUTA, PVDDB1 to OUTPUTB  
I
SOURCE  
On-state resistance matching low side  
On-state resistance matching high side  
98%  
98%  
NOTES: 1. Test time should be < 1 ms to avoid temperature change.  
2. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.  
3. Connect PVDDA2 and PVDDB2 to 26.5-V power supply with respect to PVSS. LDROUTA, LDROUTB, BOOTSTRAPA, and  
BOOTSTRAPB pins open.  
4. Connect PVDDA2 to 26.5-V power supply with respect to PVSS. LDROUTA, LDROUTB, BOOTSTRAPA and BOOTSTRAPB  
capacitorsareconnectedrespectively. ClockPWMinputstoallowbootstrapcapacitorstocharge. 9399%modulationmustbeused  
on PWM_AP, PWM_AM, PWM_BP, and PWM_BM inputs to prevent the activity detector from shutting down the device during this  
measurement. Note that F  
= 384 kHz.  
switching  
electrical characteristics, voltage regulator, T = 25°C (unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
I
= 5 mA,  
PVDDA2=PVDDB2 = 18 V to 28 V,  
DVDD = 3.3 V  
O
Output voltage (LDROUTA, LDROUTB)  
14.5  
15.3  
16  
V
See Note 6,  
NOTE 5: These voltage regulators are for internal gate drive circuits only and are not to be used under any circumstances to supply current to  
external circuity.  
10  
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TAS5101  
SLES039 JUNE 2002  
THERMAL INFORMATION  
The thermally enhanced DAP package is based on the 32-pin HTSSOP, but includes a thermal pad (see  
Figure 4) to provide an effective thermal contact between the IC and the PWB.  
Traditionally, surface mount and power have been mutually exclusive terms. A variety of scaled-down TO-220  
type packages have leads formed as gull wings to make them applicable for surface-mount applications. These  
packages, however, have two shortcomings: they do not address the very low profile requirements (<2 mm) of  
many of todays advanced systems, and they do not offer a terminal-count high enough to accommodate  
increasing integration. On the other hand, traditional low-power surface-mount packages require  
power-dissipation derating that severely limits the usable range of many high-performance analog circuits.  
The PowerPAD package (thermally enhanced HTSSOP) combines fine-pitch surface-mount technology with  
thermal performance comparable to much larger power packages.  
The PowerPAD package is designed to optimize the heat transfer to the PWB. Because of the very small size  
and limited mass of a HTSSOP package, thermal enhancement is achieved by improving the thermal  
conduction paths that remove heat from the component. The thermal pad is formed using a patented lead-frame  
design and manufacturing technique to provide a direct connection to the heat-generating IC. When this pad  
is soldered or otherwise thermally coupled to an external heat dissipater, high power dissipation in the ultrathin,  
fine-pitch, surface-mount package can be reliably achieved.  
DIE  
Thermal  
Side View (a)  
Pad  
DIE  
End View (b)  
Bottom View (c)  
Figure 3. Views of Thermally Enhanced DAP Package  
11  
www.ti.com  
TAS5101  
SLES039 JUNE 2002  
APPLICATION INFORMATION  
TAS5010  
C11  
TAS5101  
1
32  
31  
30  
29  
28  
27  
PWM_AP  
PWM_AM  
26.5 V  
PWM_BP  
PWM_BM  
PVDDA2  
LDROUTA  
2
3
4
BOOTSTRAPA  
ERR1  
ERR0  
C8 C7  
Error  
Reporting  
RESET  
PVDDA1  
Snubber  
Circuit  
5
SHUTDOWN  
DVDD  
PVDDA1  
VALID_L  
PWM_AM  
PWM_AP  
6
7
8
9
L1  
OUTPUTA  
26  
25  
C1  
DVSS  
OUTPUTA  
C10  
C9  
DVSS  
PVSS  
PVSS  
24  
23  
22  
21  
DVSS  
C2  
10  
11  
OUTPUTB  
VRFILT  
BIAS_A  
R1  
R2  
OUTPUTB  
PVDDB1  
L2  
12  
13  
BIAS_B  
HiZ  
Snubber  
Circuit  
20  
19  
18  
17  
PVDDB1  
14  
15  
16  
C5  
C6  
RESET  
BOOTSTRAPB  
LDROUTB  
PVDDB2  
PWM_BM  
PWM_BP  
R3  
R4  
26.5 V  
C3  
C4  
26.5 V  
NOTE: C1, C2 = 1.0 µF  
C3, C4 = 470 µF  
C5, C8 = 0.033 µF  
C6, C7 = 0.1 µF  
C9, C10 = 0.1 µF  
C11, C12 = 0.1 µF  
R1, R2 = 13 kΩ  
R3, R4 =4.7 kΩ  
L1, L2 = 10 µH  
Figure 4. Typical TAS5101 Application (One Channel Shown)  
See the application note, TI literature number SLEA001 for detailed application information.  
12  
www.ti.com  
TAS5101  
SLES039 JUNE 2002  
MECHANICAL DATA  
DAP (R-PDSO-G**)  
PowerPAD PLASTIC SMALL-OUTLINE PACKAGE  
38 PINS SHOWN  
0,30  
0,19  
0,65  
38  
M
0,13  
20  
Thermal Pad  
(see Note D)  
6,20  
8,40  
NOM 7,80  
0,15 NOM  
Gage Plane  
1
19  
0,25  
A
0°ā8°  
0,75  
0,50  
Seating Plane  
0,10  
0,15  
0,05  
1,20 MAX  
PINS **  
28  
30  
32  
38  
DIM  
9,80  
9,60  
11,10  
10,90  
11,10  
10,90  
12,60  
12,40  
A MAX  
A MIN  
4073257/A 07/97  
NOTES: A. All linear dimensions are in millimeters.  
B. This drawing is subject to change without notice.  
C. Body dimensions do not include mold flash or protrusion.  
D. Thepackagethermalperformancemaybeenhancedbybondingthethermalpadtoanexternalthermalplane.Thispadiselectrically  
and thermally connected to the backside of the die and possibly selected leads. Thermal pad size is 3,86 mm X 3,91 mm for the  
32-pin TAS5101 device.  
E. Falls within JEDEC MO-153  
PowerPAD is a trademark of Texas Instruments.  
13  
www.ti.com  
IMPORTANT NOTICE  
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications,  
enhancements, improvements, and other changes to its products and services at any time and to discontinue  
any product or service without notice. Customers should obtain the latest relevant information before placing  
orders and should verify that such information is current and complete. All products are sold subject to TI’s terms  
and conditions of sale supplied at the time of order acknowledgment.  
TI warrants performance of its hardware products to the specifications applicable at the time of sale in  
accordance with TI’s standard warranty. Testing and other quality control techniques are used to the extent TI  
deems necessary to support this warranty. Except where mandated by government requirements, testing of all  
parameters of each product is not necessarily performed.  
TI assumes no liability for applications assistance or customer product design. Customers are responsible for  
their products and applications using TI components. To minimize the risks associated with customer products  
and applications, customers should provide adequate design and operating safeguards.  
TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right,  
copyright, maskworkright, orotherTIintellectualpropertyrightrelatingtoanycombination, machine, orprocess  
in which TI products or services are used. Information published by TI regarding third–party products or services  
does not constitute a license from TI to use such products or services or a warranty or endorsement thereof.  
Use of such information may require a license from a third party under the patents or other intellectual property  
of the third party, or a license from TI under the patents or other intellectual property of TI.  
Reproduction of information in TI data books or data sheets is permissible only if reproduction is without  
alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction  
of this information with alteration is an unfair and deceptive business practice. TI is not responsible or liable for  
such altered documentation.  
Resale of TI products or services with statements different from or beyond the parameters stated by TI for that  
product or service voids all express and any implied warranties for the associated TI product or service and  
is an unfair and deceptive business practice. TI is not responsible or liable for any such statements.  
Mailing Address:  
Texas Instruments  
Post Office Box 655303  
Dallas, Texas 75265  
Copyright 2002, Texas Instruments Incorporated  

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