SN65LVPE501RGER [TI]
Dual Channel x1 PCIe Redriver/Equalizer; 双通道的PCIe X1转接驱动器/均衡器型号: | SN65LVPE501RGER |
厂家: | TEXAS INSTRUMENTS |
描述: | Dual Channel x1 PCIe Redriver/Equalizer |
文件: | 总24页 (文件大小:1268K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SN65LVPE501
www.ti.com
SLLSE30A –MAY 2010–REVISED MAY 2012
Dual Channel x1 PCIe Redriver/Equalizer
Check for Samples: SN65LVPE501
1
FEATURES
•
Excellent Jitter and Loss Compensation
Capability:
•
•
Single Lane PCIe Equalizer/Redriver
–
30" of 6 mil Stripline on FR4
Support for Both PCIe Gen I (2.5Gbps) and
Gen II (5.0 Gbps) Speed
•
•
Small Foot Print – 24 Pin 4 × 4 QFN Package
High Protection Against ESD Transient
•
Selectable Equalization, De-emphasis and
Output Swing Control
–
–
–
HBM: 3,000 V
CDM: 1,500 V
MM: 200 V
•
•
•
•
Integrated Termination
Hot-Plug Capable
Receiver Detect
Low Power:
APPLICATIONS
•
PC MB, Docking Stations, Backplane and
Cabled Application
–
330mW(TYP), VCC = 3.3V
•
Auto Low Power Modes:
–
–
5mW (TYP) When no Connection Detected
70mW (TYP) When in Auto-Low Power
Mode
DESCRIPTION
The SN65LVPE501 is a dual channel, single lane PCIe redriver and signal conditioner supporting data rates of
up to 5.0Gbps. The device complies with PCIe spec revision 2.1.
Programmable EQ, De-Emphasis and Amplitude Swing
The SN65LVPE501 is designed to minimize the signal degradation effects such as crosstalk and inter-symbol
interference (ISI) that limits the interconnect distance between two devices. The input stage of each channel
offers selectable equalization settings that can be programmed to match loss in the channel. The differential
outputs provide selectable de-emphasis to compensate for the anticipated distortion PCIe signal will experience.
Level of de-emphasis will depend on the length of interconnect and its characteristics. Both equalization and de-
emphasis levels are controlled by the setting of signal control pins EQ1, EQ2 and DE1, DE2.
To provide additional control of signal integrity in extended backplane applications LVPE501 provides
independent output amplitude control for each channel. See Table 2 for setting details.
Device PowerOn
Device initiates internal power-on reset after VCC has stabilized. External reset can also be applied at anytime by
toggling RST pin. External reset is recommended after every device power-up. When RST is driven high, the
device samples the state of EN_RXD, if it is set H device enters Rx.Detect state where each channel will perform
Rx.Detect function (as described in PCIe spec). If EN_RXD is set L, automatic RX detect function is disabled and
both channels are enabled with their termination set to ZDC_RX
.
Receiver Detection
While EN_RXD pin is H and device is not in sleep mode (RST is H), SN65LVPE501 performs RX.Detect on both
channels indefinitely until remote termination is detected on both channels. Automatic Rx detection feature can
be forced off by driving EN_RXD low. In this state both channels input termination are set to ZDC_RX
.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2010–2012, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
SN65LVPE501
SLLSE30A –MAY 2010–REVISED MAY 2012
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
DESCRIPTION CONTINUED
Sleep (Shut_Down) Mode
This is low power state triggered by RST = L. In sleep mode receiver termination resistor for each of the two
channels is switched to ZRX-HIGH_IMP of >50 KΩ and transmitters are pulled to Hi-Z state. Device power is reduced
to <1mW (TYP). To get device out of sleep mode RST is toggled L-H.
Electrical Idle Support
A link is in an electrical idle state when the TX± voltage is held at a steady constant value like the common mode
voltage. SN65LVPE501 detects an electrical idle state when RX± input voltage of the associated channel falls
below VEID_TH min. After detection of an electrical idle state in a given channel the device asserts electrical idle
state in its corresponding TX. When RX± voltage exceeds VEID_TH max, normal device operation is restored and
output starts passing input signal. Electrical idle exit and entry time is specified at ≤6ns.
Electrical idle support is independent for each channel.
Power Save Features
The device supports three power save modes as described below.
1. Sleep (Shut_Down) Mode
This mode can be enabled from any state (Rx detect or active) by driving RST L. In this state both channels
have their termination set to ZRX-HIGH_IMP+ and outputs are at Hi-Z. Device power is 1mW (MAX)
2. Auto Low Power Mode
This mode is enabled when PS pin is tied H and device is in active mode. In this mode anytime Vindiff_pp falls
below selected VEID_TH for a given channel and stays below VEID_TH for >1µs (TYP), the associated CH will
enter auto low power (ALP) mode where power/CH will be reduced to <1/3rd of normal operating power/CH
or about 70mW under typical voltage of 3.3V when ALP conditions are met for both channels. A CH will exit
ALP mode whenever Vindiff_pp exceeds max VEID_TH for that channel. Exit latency is 30ns max. To use this
mode link latency will need to account for the ALP exit time for N_FTS. ALP mode is handled by each
channel independently based on its input differential signal level. This mode can be disabled by leaving PS
as NC or tying PS to GND via 4.7kΩ.
3. Cable Disconnect Mode
This mode is activated when RST is H, EN_RXD = H, and no termination is detected by either channel.
Device is in the Rx.Detect state whereby it is continuously performing Rx.Detect on both channels. In this
state total power consumed by device is typically <3% of normal active power. Or <10mW (MAX).
Beacon Support
With its broadband design, the SN65LVPE501 supports low frequency Beacon signal (as defined by PCIe 2.1
spec) used to indicate wake-up event to the system by a downstream device when in L2 power state. All
requirements for a beacon signal as specified in PCI Express specification 2.1 must be met for device to pass
beacon signals.
Devic Power
The SN65LVPE501 is designed to operate from a single 3.3V supply. Always practice proper supply sequencing
procedure. Apply VCC first before any input control pin signals are applied to the device. Power-down sequence
is in reverse order.
2
Copyright © 2010–2012, Texas Instruments Incorporated
SN65LVPE501
www.ti.com
SLLSE30A –MAY 2010–REVISED MAY 2012
PCIe
Instrumentation Chassis
/I/O expansion box/
Docking Station
compliant
cable
Server/PC/Notebook
Midplane
I/O Module
I/O Module
I/O Module
R
x1
I/O Hub
x1
R
R
x1
uP
®
R
SN75LVPE501
Figure 1. SN65LVPE501 Typical Applications
Copyright © 2010–2012, Texas Instruments Incorporated
3
SN65LVPE501
SLLSE30A –MAY 2010–REVISED MAY 2012
www.ti.com
RST
Detect
RX1+
TX1+
TX1-
Receiver/
Equalizer
CHANNEL 1
Driver
RX1-
EQ1
EQ
CNTRL
EQ2
VBB_TX
DE1
DE2
DEMP
CNTRL
TX2+
RX2+
RX2-
Receiver/
Equalizer
CHANNEL 2
Driver
TX2-
VBB_TX
OS
Cntrl.
Detect
RST
OS1
OS2
Figure 2. Data Flow Block Diagram
Split System
Upstream Board
Downstream Board
PCIe
RC
R
PCIe Cable
EN_RXD
CPRSNT#
Enclosed System
System Board
PCIe
RC
R
EN_RXD
Mezzanine
Card
Figure 3. Typical Implementation
4
Copyright © 2010–2012, Texas Instruments Incorporated
SN65LVPE501
www.ti.com
NUMBER
SLLSE30A –MAY 2010–REVISED MAY 2012
Table 1. Pin Description
PIN
NAME
I/O TYPE
DESCRIPTION
HIGH SPEED DIFFERENTIAL I/O PINS
8
RX1+
RX1–
RX2+
RX2–
TX1+
TX1–
TX2+
TX2–
I, CML
I, CML
I, CML
I, CML
O, CML
O, CML
O, CML
O, CML
9
Non-inverting and inverting CML differential input for CH 1 and CH 2. These pins are tied to an
internal voltage bias by dual termination resistor circuit.
20
19
23
22
11
12
Non-inverting and inverting CML differential output for CH 1 and CH 2. These pins are
internally tied to voltage bias by termination resistors.
DEVICE CONTROL PIN(1)
5
14
7
EN_RXD
PS
I, LVCMOS Sets device operation modes per Table 2. Internally pulled to VCC
I, LVCMOS Select auto-low power save mode per Table 2. Internally pulled to GND
I, LVCMOS Reset device, input active Low. Internally pulled to VCC
I, LVCMOS Reserved for factory test. Must be connected to GND
RST
24
RSVD
SIGNAL CONTROL PINS(2)
3,16
2,17
DE1, DE2
EQ1, EQ2
OS1, OS2
I, LVCMOS Selects de-emphasis settings for CH 1 and CH 2 per Table 2. Internally tied to VCC/2
I, LVCMOS Selects equalization settings for CH 1 and CH 2 per Table 2. Internally tied to VCC/2
I, LVCMOS Selects output amplitude for CH 1 and CH 2 per Table 2. Internally tied to VCC/2
4, 15
POWER PINS
1,13
VCC
GND
Power
Power
Positive supply should be 3.3V ± 10%
Supply ground
6,10,18,21
(1) When not used can be left as NC or connected to VCC/GND via 4.7kΩ resistor.
(2) Internally biased to VCC/2 with >200kΩ pullup/pulldown. When 3-state pins are left as NC board leakage at the pin pad must be <1 µA
otherwise drive to VCC/2 to assert mid-level state.
Copyright © 2010–2012, Texas Instruments Incorporated
5
SN65LVPE501
SLLSE30A –MAY 2010–REVISED MAY 2012
www.ti.com
Table 2. Signal Control Pin Setting
TRANSITION BIT AMPLITUDE
OSx
(TYP mVpp)
NC
0
1000
875
1
1100
DEx(1)
OSx(1) = NC
–3.7 dB
OSx(1) = 0
OSx(1) = 1
–4.6 dB
–6.6 dB
–8.7 dB
NC
0
–2.5 dB
–5.5 dB
–9.5 dB
–6.4 dB
1
–9.4 dB
EQUALIZATION dB
(At GenII Speed)
EQx(1)
NC
0
0
7
1
15
EN_RXD
DEVICE FUNCTION
Set input termination to ZDC_RX
and disable Rx. Detect
0
Perform Rx.Detect (default,
internally pulled to Vcc)
1
RST
DEVICE FUNCTION
Device in quiescent state and
inputs set to Hi-Z
0
Device not in shut_down mode
(default, internally pulled to Vcc)
1
PS
0
DEVICE FUNCTION
Auto-low power mode disabled
(default, internally pulled to GND)
1
Auto-low power mode enabled
(1) Applies to Channel 1 and Channel 2 at 2.5 GHz.
6
Copyright © 2010–2012, Texas Instruments Incorporated
SN65LVPE501
www.ti.com
SLLSE30A –MAY 2010–REVISED MAY 2012
3.3 V
TOP VIEW
OS1 DE1
GND
EN_RXD
EQ1
VCC
6
1
SN65LVPE501
RST
RSVD
7
24
0.1 µF
0.1 µF
TX1+
TX1–
RX1+
RX1–
CH1
0.1 µF
0.1 µF
Thermal Pad
(must be soldered to
GND plane)
GND
GND
0.1 µF
TX2+
TX2–
0.1 µF
RX2+
RX2–
CH2
0.1 µF
0.1 µF
12
19
13
18
VCC
PS
OS2
DE2
EQ1
GND
3.3 V
(1) This is a reference example and it is not intended to represent the best configuration; every designer should select
the EQ and DE settings that better fits the system needs. All DEx, EQx and OSx pins default to NC.
(2) The recommended value for all the resistors shown in the Figure is 4.9K Ω.
(3) For terminals OSx, DEx, and EQx, populate only pull-up or only pull-down according to the desired setting.
Figure 4. Reference Device Implementation
Copyright © 2010–2012, Texas Instruments Incorporated
7
SN65LVPE501
SLLSE30A –MAY 2010–REVISED MAY 2012
www.ti.com
BOTTOM VIEW
EQ1 DE1
EN_RXD
OS1
VCC
1
GND
6
SN65LVPE501
RSVD
24
7
RST
TX1+
TX1-
GND
RX2+
RX2-
RX1+
RX1-
CH1
Thermal Pad
(must be soldered to
GND plane)
GND
TX2+
TX2-
CH2
19
12
13
18
GND EQ2
DE2 OS2
PS VCC
TOP VIEW
GND EN_RXD OS1
DE1 EQ1
VCC
1
6
SN65LVPE501
RSVD
TX1+
TX1-
RST
7
24
RX1+
RX1-
CH1
Thermal Pad
(must be soldered to
GND plane)
GND
GND
RX2+
RX2-
TX2+
TX2-
CH2
12
19
18
13
OS2 DE2 EQ2
VCC PS
GND
Figure 5. Flow-Through Pin-Out
ORDERING INFORMATION(1)
PART MARKING
LVPE501
PART NUMBER
PCAKAGE
SN65LVPE501RGER
SN65LVPE501RGET
24-pin RGE Reel (large)
24-pin RGE Reel (small)
LVPE501
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
8
Copyright © 2010–2012, Texas Instruments Incorporated
SN65LVPE501
www.ti.com
SLLSE30A –MAY 2010–REVISED MAY 2012
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)(1)
UNIT / VALUES
–0.5 V to 4 V
Supply Voltage Range(2)
Voltage Range
VCC
Differential I/O
–0.5V to 4 V
Control I/O
–0.5 V to VCC + 0.5
±3000 V
(Human Body Model) QSS 009-105 (JESD22-A114B)
(Charged Device Model) QSS 009-147 (JESD22-C101-A)
(Machine Model) JESD22-A115-A
Electrostatic Discharge
±1500 V
±200 V
Continuous power dissipation
See Thermal Information Table
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any conditions beyond those indicated under recommended operating conditions
is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential voltages, are with respect to network ground terminal.
THERMAL INFORMATION
SN65LVPE501
THERMAL METRIC(1)
RGE
UNITS
24 PINS
θJA
Junction-to-ambient thermal resistance(2)
46
42
13
0.5
9
(3)
θJC(TOP)
θJB
Junction-to-case(top) thermal resistance
(4)
Junction-to-board thermal resistance
°C/W
(5)
ψJT
Junction-to-top characterization parameter
(6)
ψJB
Junction-to-board characterization parameter
(7)
θJC(BOTTOM)
Junction-to-case(bottom) thermal resistance
4
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(3) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-
standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
(5) The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6) The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7).
(7) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
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RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MIN TYP MAX UNIT
VCC
Supply Voltage
3
75
3.3
3.6
V
CCOUPLING
AC Coupling Capacitor
Operating free-air temperature
200 nF
85 °C
–40
ELECTRICAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP MAX UNIT
DEVICE PARAMETERS (under recommended operating conditions, unless otherwise noted)
RST, DEx, EQx, OSx = NC, EN_RXD = NC, K28.5 pattern at 5 Gbps,
VID = 1000mVp-p
ICC
101
120
ICCidle
PS=1; When auto-low power conditions are met
RST = GND
21
0.2
2
26
1
Supply Current
mA
ICCshut-down
ICCRX.Detect
RST, EN_RXD = NC
Maximum Data Rate
5
Gbps
µs
AutoLPENTRY
AutoLPEXIT
Auto Low Power Entry Time
Auto Low Power Exit Time
Electrical Idle at Input, Refer to Figure 9
After first signal activity, Refer to Figure 9
1.0
1.3
15
30
30
ns
Rx Detect Start Event, Vcc = Stable
RST, EN_RXD = H
tPU
Power Up Time
15
µs
Sleep (shut-down) Mode Entry
Time
tDIS
RST H→L; EN_RXD=X
1
µs
µs
TENB
Sleep (shut-down) Mode Exit Time RST L→H; EN_RXD=H, Start of Ex detect event
10
CONTROL LOGIC (under recommended operating conditions, unless otherwise noted)
VIH
High level Input Voltage
Low Level Input Voltage
Input Hysteresis
1.4
VCC
0.5
V
V
VIL
–0.3
VHYS
150
mV
OSx, EQx, DEx = VCC
EN_RXD, RST = VCC
OSx, EQx, DEx = GND
PS = GND
30
1
IIH
High Level Input Current
µA
µA
–30
–1
IIL
Low Level Input Current
EN_RXD, RST = GND
–20
RECEIVER AC/DC (under recommended operating conditions, unless otherwise noted)
Vindiff_pp
VCM_RX
RX1, RX2 Input Voltage Swing
AC coupled differential signal
100
0
1200 mVp-p
3.6
RX1, RX2 Common Mode Voltage
V
RX1, RX2 AC Peak common
mode voltage
VinCOM_P
150 mVP
ZDC_RX
Zdiff_RX
DC single ended impedance
40
80
50
60
Ω
Ω
DC Differential Input impedance
100
120
Device in sleep mode Rx termination not powered; Measured with
respect to GND over 200mV max
ZRX_High_IMP+
VEID_TH
DC Input High Impedance
50
74
84
kΩ
Electrical Idle Detect Threshold
Measured at receiver pin (see Figure 7)
50 MHz – 1.25 GHz
65
10
8
175 mVpp
dB
RLRX-DIFF
Differential Return Loss
Operating temperature 0°C to 85°C
1.25 GHz – 2.5 GHz
dB
dB
Operating temperature –40°C to 85°C
7
RLRX-CM
Common Mode Return Loss
50 MHz – 2.5 GHz
10
10
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ELECTRICAL CHARACTERISTICS (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP MAX UNIT
TRANSMITTER AC/DC (under recommended operating conditions, unless otherwise noted)
RL =100Ω ±1%, DEx, OS = NC, Transition Bit
800 1000 1200
VTXDIFF_PP
RL =100Ω ±1%, DEx = NC, OSx = GND Transition Bit
RL =100Ω ±1%, DEx = NC, OSx = VCC Transition Bit
875
mV
mV
1100
RL =100Ω ±1%, DEx=NC, OSx = 0,1,NC
Non-Transition Bit
Differential peak-to-peak Output
Voltage
655
495
350
RL =100Ω ±1%, DEx=0,OSx = 0,1,NC
Non-Transition Bit
VTXDIFF_NTB_PP
RL =100Ω ±1%, DEx=1, OSx = 0,1,
NC Non-Transition Bit
DEx, OSx = NC, See
Figure 11 ;
(for OS1,2 = 1 and 0 see
Table 2)
Operating temperature 0°C to 85°C
–3.0
–3.0
–3.7
–3.7
–4.0
–4.2
dB
dB
Operating temperature –40°C to 85°C
De-Emphasis Level
DEx = 0, OSx = NC
DEx = 1, OSx = NC
At 5Gbps
–6.4
–9.4
0.8
TDE
De-Emphasis Width
UI
Zdiff_TX
DC Differential Impedance
Defined during signaling
80
10
9.5
6
100
120
Ω
Operating temperature 0°C to 85°C
Operating temperature –40°C to 85°C
Operating temperature 0°C to 85°C
Operating temperature –40°C to 85°C
f = 50 MHz – 1.25 GHz.
f = 1.25 GHz – 2.5 GHz,
RLdiff_TX
Differential Return Loss
dB
5.5
10
RLCM_TX
ITX_SC
Common Mode Return Loss
TX short circuit current
f = 50 MHz – 2.5 GHz
TX± shorted to GND
dB
60
90
mA
Transmitter DC common-mode
voltage
VTX_CM_DC
Allowed DC CM voltage at TX pins
Max(Vd+ + Vd–)/2 – Min(Vd+ + Vd–)/2
|VTX_CM_DC [L0] – VTX_CM_DC [L0s] |, PS=L
2.1
2.65
3.1
V
TX AC common mode voltage at
GEN II speed
VTX_CM_AC2
26
2
100 mVpp
TX AC common mode voltage at
GEN I speed
VTX_CM_AC1
20
100
25
mV
mV
mV
Absolute Delta DC CM voltage
during active and idle states
VTX_CM_DeltaL0-L0s
0
0
0
VTX_CM-DC-Line-
Absolute Delta of DC CM voltage
between D+ and D–
|VTX_CM_DC-D+ [L0] – VTX_CM_DC-D- [L0]
|
Delta
Electrical idle differential peak
output voltage
VTX_idle_diff-AC-p
VTX_idle_diff-DC
Vdetect
|VTX-Idle-D+ – VTX-Idle-D–| HP filtered to remove any DC component
|VTX_idle-D+ – VTX_idle-D–| LP filtered to remove any AC component
Positive voltage to sense receiver
1
10 mVpp
mV
DC Electrical idle differential
output voltage
3.5
Voltage change to allow receiver
detect
600
mV
ps
DEx = NC, OS = NC (CH 0 and CH 1) 20%-80% of differential voltage
at the output; VID > 1000mVpp
tR,tF
Output Rise/Fall time
30
53
1
DEx = NC, OS = NC (CH 0 and CH 1) 20%-80% of differential voltage
at the output
tRF_MM
Output Rise/Fall time mismatch
20
ps
DEx = NC (CH 0 and CH 1). Propagation delay between 50% level at
input and output. See Figure 6
Tdiff_LH, Tdiff_HL
tidleEntry tidleExit
Differential Propagation Delay
Idle entry and exit times
280
4
330
6
ps
ns
See Figure 7
Tx EQUALIZATION at GEN II Speed (under recommenced operating conditions)
At point A in Figure 10(2)
At point B in Figure 10(2)
At point A in Figure 10(2)
30
25
16
11
50
80
30
60
(1)
TTX-TJ
Total Jitter
ps pp
ps pp
TTX-DJ
Deterministic Jitter
(2)
At point B in Figure 10
(1) Includes RJ at 10-12
(2) Refer to Figure 10 with ± K28.5 pattern at 5Gbps, –3.5dB DE from source AWG .
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IN
T
T
diff_HL
diff_LH
OUT
Figure 6. Propagation Delay
vertical spacer
IN+
V
V
EID_TH
CM
IN-
t
t
idleExit
idleEntry
OUT+
V
CM
OUT-
Figure 7. Idle Mode Exit and Entry Delay
vertical spacer
80%
20%
t
r
t
f
Figure 8. Output Rise and Fall Times
vertical spacer
RX_1,2+
RX_1,2-
VCM
RX
t
idleEntry
AutoLP
EXIT
TX_1,2+
TX_1,2-
VCM
TX
AutoLP
Power Saving
Mode
ENTRY
Figure 9. Auto Low Power Mode Timing (when enabled)
12
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Product Folder Link(s): SN65LVPE501
SN65LVPE501
www.ti.com
SLLSE30A –MAY 2010–REVISED MAY 2012
Jitter
Measurement
B
A
25" 6mil
Stripline
5" 6mil Stripline
1
AWG*
2
B
A
AWG*
A = Device pin + 2"
B = End of trace on test board
Jitter
Measurement
Figure 10. Jitter Measurement Setup
vertical spacer
1-bit
1 to N bits
1 to N bits
1-bit
tDE
DEx = NC
-3.7dB
-6.4 dB
DEx = 0
-9.4 dB
DEx = 1
VTXDIFF_NTB_P-P
VTXDIFF_TB_P-P
tDE
Figure 11. Output De-Emphasis Levels OSx = NC
Typical Eye Diagram and Performance Curves at Output
Input Signal Characteristics: Data Rate = 5 Gbps, VID = 1000 mVpp, DE = -3.5 dB, Pattern = K28.5
Device Operating Conditions: VCC = 3.3 V, Temp = 25°C
Device EQ settings (EQ/DE/OS) adjusted for best eye performance
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Output Trace Length Held Constant and Input Trace Length Varied
Figure 12. Input Trace = 4 Inches, 6 mil, and Measured at Output Trace = 4 Inches
vertical spacer
Figure 13. Input Trace = 20 Inches, 6 mil, and Measured at Output Trace = 4 Inches
14
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Copyright © 2010–2012, Texas Instruments Incorporated
Product Folder Link(s): SN65LVPE501
SN65LVPE501
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SLLSE30A –MAY 2010–REVISED MAY 2012
Figure 14. Input Trace = 32 Inches, 6 mil, and Measured at Output Trace = 4 Inches
vertical spacer
Figure 15. Input Trace = 44 Inches, 6 mil, and Measured at Output Trace = 4 Inches
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Variable Trace Lengths at Input and Output
Figure 16. Input Trace = 28 Inches, 6 mil, and Measured at Output Trace = 24 Inches
vertical spacer
Figure 17. Input Trace = 44 Inches, 6 mil, and Measured at Output Trace = 24 Inches
16
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Copyright © 2010–2012, Texas Instruments Incorporated
Product Folder Link(s): SN65LVPE501
SN65LVPE501
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SLLSE30A –MAY 2010–REVISED MAY 2012
REVISION HISTORY
Changes from Original (May 2010) to Revision A
Page
•
Added Figure 4 ..................................................................................................................................................................... 7
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PACKAGE OPTION ADDENDUM
www.ti.com
11-May-2012
PACKAGING INFORMATION
Status (1)
Eco Plan (2)
MSL Peak Temp (3)
Samples
Orderable Device
Package Type Package
Drawing
Pins
Package Qty
Lead/
Ball Finish
(Requires Login)
SN65LVPE501RGER
SN65LVPE501RGET
ACTIVE
ACTIVE
VQFN
VQFN
RGE
RGE
24
24
3000
250
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jul-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
SN65LVPE501RGER
SN65LVPE501RGET
VQFN
VQFN
RGE
RGE
24
24
3000
250
330.0
180.0
12.4
12.4
4.25
4.25
4.25
4.25
1.15
1.15
8.0
8.0
12.0
12.0
Q2
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jul-2012
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
SN65LVPE501RGER
SN65LVPE501RGET
VQFN
VQFN
RGE
RGE
24
24
3000
250
367.0
210.0
367.0
185.0
35.0
35.0
Pack Materials-Page 2
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changes to its semiconductor products and services per JESD46C and to discontinue any product or service per JESD48B. Buyers should
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TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
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