LMX2216MX [TI]
RF/Microwave Mixer, RF/MICROWAVE DOUBLE BALANCED MIXER;
| 型号： | LMX2216MX |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | RF/Microwave Mixer, RF/MICROWAVE DOUBLE BALANCED MIXER 局域网 射频 微波 |
| 文件： | 总14页 (文件大小：505K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LMX2216
LMX2216 0.1 GHz to 2.0 GHz Low Noise Amplifier/Mixer for RF Personal
Communications
Literature Number: SNOS689A
August 1995
LMX2216
0.1 GHz to 2.0 GHz Low Noise Amplifier/Mixer
for RF Personal Communications
General Description
The LMX2216 is a monolithic, integrated low noise amplifier
(LNA) and mixer suitable as a first stage amplifier and down-
converter for RF receiver applications. The wideband oper-
ating capabilities of the LMX2216 allow it to function over
frequencies from 0.1 GHz to 2.0 GHz. It is fabricated using
National Semiconductor’s ABiC IV BiCMOS process.
The LMX2216 is available in a narrow-body 16-pin surface
mount plastic package.
Features
Y
Wideband RF operation from 0.1 GHz to 2.0 GHz
Y
No external biasing components necess
All input and output ports of the LMX2216 are single-ended.
The LNA input and output ports are designed to interface to
a 50X system. The Mixer input ports are matched to 50X.
The output port is matched to 200X. The only external com-
ponents required are DC blocking capacitors. The balanced
architecture of the LMX2216 maintains consistent operating
parameters from unit to unit, since it is implemented in a
monolithic device. This consistency provides manufacturers
Y
3V operation
Y
LNA input and output ports matched
Y
Mixer input ports matcheo 5X, ouort matcd
to 200X.
Y
Doubly balanced Gilbert cell mer (single input
and output)
Y
Low power consum
Y
Power down feat
a
significant advantage since tuning proceduresÐoften
Y
needed with discrete designsÐcan be reduced or eliminat-
ed.
Smaoutline, plce mont package
Applicaons
Y
The low noise amplifier produces very flat gain over the en-
tire operating range. The doubly-balanced, Gilbert-cell mixer
provides good LO-RF isolation and cancellation of second-
order distortion products. A power down feature is imple-
mented on the LMX2216 that is especially useful for stand-
by operation common in Time Division Multiple Access
(TDMA) and Time Division Duplex (TDD) systems.
Digital Europn Cordlelecommunications (DECT)
Y
Poe wirelesommunications (PCS/PCN, cordless)
Y
al area etworks (WLANs)
telephone systems
communications systems
Functional Block/Pin Diagram
TL/W/11814–1
Order Number LMX2216M
See NS Package Number M16A
C
1995 National Semiconductor Corporation
TL/W/11814
RRD-B30M115/Printed in U. S. A.
Pin Description
Pin
No.
Pin
I/O
Description
Name
1
V
CC
M
I
Voltage supply for the mixer. The input voltage level to this pin should be a DC Voltage ranging from
2.85V to 3.15V.
2
3
4
5
6
GND
LNA
Ground
I
I
RF input signal to the LNA. External DC blocking capacitor is required.
IN
GND
GND
Ground
Ground
RF
IN
RF input to the mixer. The RF signal to be down converted is connected to this pin. External DC
blocking capacitor is required.
7
8
GND
Ground
PWDN
I
Power down signal pin. Both the LNA and mixer are powered down when a HIGH level is applied to
this pin (V ).
IH
9
10
11
12
13
14
IF
OUT
O
IF output signal of the mixer. External DC blocking capacitor is required.
GND
LO
Ground
I
Local oscillator input signal to the mixer. External DC blocking capacitor is rred.
IN
GND
GND
Ground
Ground
LNA
OUT
O
I
Output of the LNA. This pin outputs the amplified RF signal. Exteking capacitor is
required.
15
16
GND
Ground
V
CC
A
LNA supply Voltage. DC Voltage ranging from 2.85V to 3.1
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Rended Operating
C
Sup
2.85V–3.15V
b
a
10 C to 70 C
§
Operature (T )
A
§
0.1 GHz to 2.0 GHz
Supply Voltage (V
)
CC
6.5V
RF
IN
IN
b
a
65 C to 150
Storage Temperature (T )
S
§
§
O
0.1 GHz to 2.0 GHz
b a
40 C to 85
Operating Temperature (T
)
O
§
2
Electrical Characteristics: LNA
@
b
30 dBm unless otherwise specified.)
e a
e
e
e
50X and f
IN
g
3.0V 5%, T
(V
25 C, Z
§
2.0 GHz
CC
A
o
Symbol
Parameter
Conditions
Min
Typ
Max
8.0
10
Units
mA
mA
I
I
Supply Current
Supply Current
Gain
In Operation
6.5
CC
In Power Down Mode
CC-PWDN
G
9
10
dB
b
b
P
Output 1 dB Compression Point
Output 3rd Order Intercept Point
Single Side Band Noise Figure
Input Return Loss
5.0
5.0
3.0
7.0
dBm
dBm
dB
1dB
OIP3
NF
4.8
15
11
6.0
RL
RL
10
10
dB
IN
Output Return Loss
dB
OUT
@
e
a
e
e
e
2.0 GHz
g
Electrical Characteristics: Mixer (V
3.0V 5%, T
25 C, Z
§
50X, f
CC
e
110 MHz unless otherwise specified.)
A
o
@
1.89 GHz 0 dBm; f
b
e
30 dBm, f
LO
IF
Symbol
Parameter
Conditions
In Operation
Min
Ma
12.
0
Units
mA
mA
dB
I
I
Supply Current
Supply Current
CC
In Power Down Mode
CC-PWDN
G
Conversion Gain (Single Side Band)
Output 1 dB Compression Point
Output Third Order Intercept Point
Single Side Band Noise Figure
Double Side Band Noise Figure
LO to RF Isolation
4.0
6.0
C
.0
0.0
P
13.0
dBm
dBm
dB
1dB
b
OIP3
0
SSB NF
DSB NF
LO-RF
LO-IF
17
14
30
30
15
15
15
200
18
15
dB
20
dB
LO to IF Isolation
20
10
10
dB
RF RL
LO RL
IF RL
RF Return Loss
dB
LO Return Loss
dB
IF Return Loss
dB
Z
IF Port Impedance
X
IF
Electrical Characteristiower Down
Symbol
Param
Conditions
Min
Typ
Max
Units
b
V
V
Higvel Input
t Volta
urrent
rrent
V
0.8
V
V
IH
CC
0.8
IL
e
e
b
b
I
I
V
V
V
10.0
10.0
10.0
10.0
mA
mA
IH
IL
IH
CC
GND
IL
3
Typical Application Block Diagram
/11814–
FIGURE 2
Typical Characteristics
LNA
LNA Current Composition
vs Supply Voltage with
Temperature as a Parameter
LNA P ith Suply
OUT
tage as ameter
TL/W/11814–4
LNA P vs P h
OUT I
Temperaturer
LNA P vs P with
OUT IN
Temperature as a Parameter
TL/W/11814–6
TL/W/11814–7
4
Typical Characteristics (Continued)
LNA (Continued)
LNA Gain vs Frequency with Supply
Voltage as a Parameter
LNA Noise Figure vs Frequency with
Supply Voltage as a Parameter
TL/W/11814–8
L/W/11814–9
LNA Gain vs Frequency with
Temperature as a Parameter
LNA Noise Figure vs y with
Temperatuas Parar
TL/W/11814–10
TL/W/11814–11
LNA Input Return Loss vs Frequen
with Voltage as a Parameter
LNA Output Return Loss vs Frequency
with Voltage as a Parameter
TL/W/11814–12
TL/W/11814–19
5
Typical Characteristics (Continued)
MIXER
Mixer Gain (Double Sideband)
vs Frequency with Supply
Voltage as a Parameter
Mixer Gain (Double Sideband)
vs Frequency with Temperature
as a Parameter
TL/W/11814–20
14–21
Mixer Noise Figure (Double Sideband)
vs Frequency with Supply
Voltage as a Parameter
Mixer Noise Figure (ue Sidd)
vs Frequency with Terature
as a Parameter
TL/W/11814–
TL/W/11814–23
6
Typical Characteristics (Continued)
MIXER (Continued)
Mixer P vs P with Supply
OUT IN
Voltage as a Parameter
Mixer P vs P with Supply
OUT IN
Voltage as a Parameter
TL/W/11814–24
TL/W/11814–25
Mixer P vs P with
OUT IN
Temperature as a Parameter
Mixer P vs P wit
OUN
Temperatura Paraer
TL/W/126
TL/W/11814–27
Mixer RF Return Loss
IN
Mixer RF Return Loss
IN
vs Frequency with Supply
Voltage as a Parameter
vs Frequency with Supply
Voltage as a Parameter
TL/W/11814–28
TL/W/11814–29
7
Typical Characteristics (Continued)
MIXER (Continued)
Mixer RF Return Loss
IN
Mixer IF Return Loss
OUT
vs Frequency with Supply
Voltage as a Parameter
vs Frequency with Supply
Voltage as a Parameter
TL/W/11814–30
14–31
Functional Description
TL/W/11814–13
URE 3. Block Diagram of the LMX2216
8
Functional Description (Continued)
Typical Gilbert Cell
THE LNA
The LNA is a common emitter stage with active feedback.
This feedback network allows for wide bandwidth operation
while providing the necessary optimal input impedance for
low noise performance. The power down feature is imple-
mented using a CMOS buffer and a power-down switch. The
power down switch is implemented with CMOS devices.
During power down, the switch is open and only leakage
currents are drawn from the supply.
THE MIXER
The mixer is a Gilbert cell architecture, with the RF input
signal modulating the LO signal and single ended output
taken from the collector of one of the upper four transistors.
The power down circuitry of the mixer is similar to that of the
LNA. The power down switch is used to provide or cut off
bias to the Gilbert cell.
Typical Low Noise Amplifier
/W/11814–15
FIGURE 5. Typical GilbeCell Circuit Diagram
The Gilbert cell bove is circt which multiplies
two input signaO. The inpRF voltage differen-
tially modulatnts othe collectors of the transis-
toQ1 and Qh in turmodulate the LO voltage by
varyithe biarents of ttransistors Q3, Q4, Q5, and
Q6. Assing the two gnals are small, the result is a
product of e two signals, producing at the output a sum
ifferencf the frequencies of the two input signals. If
these tsignals are much larger than the thresh-
TL/W/11814–14
FIGURE 4. Typical LNA Structure
A typical low noise amplifier consists of an active amplifying
element and input and output matching networks. The input
matching network is usually optimized for noise perform-
ance, and the output matching network for gain. The active
element is chosen such that it has the lowest optimal noise
V , the output will contain other mixing products
T
rder terms which are undesirable and may need
ated or filtered out.
of the Gilbert cell shows that the output, which is
the difference of the collector currents of Q3 and Q6, is
related to the two inputs by the equation:
figure, F
, an intrinsic property of the device. Tnose
MIN
figure of a linear two-port is a function of the soce admit-
tance and can be expressed by
V
V
R
n
RF
LO
e
b
e
I
C6 EE
2
2
b
]
B )
G
e
a
b
a
DI
I
I
tanh
tanh
[
F
F
(G
ON
G
)
G
(B
N
C3
MIN
2V
2V
Ð # J( Ð # J(
G
T
T
G
and the hyperbolic tangent function can be expressed as a
Taylor series
a
e
where G
jB
G
gener aented to
the inpu
G
3
5
x
x
a
G
jB
nerator aich op-
noise fi
e
b
a
b
. . .
ON
O
tanh(x)
x
3
5
Assuming that the RF and LO signals are sinusoids.
constarelating the
of the noise figure to
mittance.
e
e
a
a
V
V
Acos (0
Bcos (0
t
t
w
w
)
RF
RF
LO
RF
LO
)
LO
then
3
A
3
e
a
b
a
a
) . . .
RF
DI
I
Acos (0RF
t
w
)
cos (0RF
t
w
EE
RF
3
Ð
(
3
B
3
a
b
a
a
) . . .
LO
Bcos (0LO
t
w
)
cos (0LO
t
w
#
LO
3
Ð
(
The lowest order term is a product of two sinusoids, yielding
a sum of two sinusoids,
a
a
) t
a
AB
2
cos ((0
a
0
) t
LO
w
a
w
)
LO
RF
RF
w
I
EE
b
b
w
RF
cos ((0
0
)
LO
Ð
RF
LO
(
one of which is the desired intermediate frequency signal.
9
Figures of Merit
GAIN (G)
Many different types of gain are specified in RF engineering.
The type referred to here is called transducer gain and is
defined as the ratio of the power delivered to the load to the
available power from the source,
P
V2OUT/R
V2IN/R
R
V2OUT
OUT
L
S
e
e
e
4
G
P
R
V2IN
L
IN
S
where V
OUT
is the voltage across the load R and V is the
IN
L
generator voltage with internal resistance R . In terms of
S
scattering parameters, transducer gain is defined as
e
G
20 log ( S )
21
l
l
where S is the forward transmission parameter, which can
21
be measured using a network analyzer.
1 dB COMPRESSION POINT (P
)
1dB
TL/W/11814–16
A measure of amplitude Iinearity, 1 dB compression point is
the point at which the actual gain is 1dB below the ideal
linear gain. For a memoryless two-port with weak nonlineari-
ty, the output can be represented by a power series of the
input as
FIGURE 6. Typical P
OUT
–P Character
IN
NOISE FIGURE (NF)
Noise figure is defined as the input signal tatio di
vided by the output signal to norao. For mplifier, i
can also be interpreted as the amt of noisntroduc
by the amplifier itself seen at the out. Mathem,
e
a
a
k
3
a
v
k
v
k
v2i
v3i
. . .
o
1
i
2
For a sinusoidal input,
a
G N
a i
S /N
i
S /N
i
a
e
v
Acos 0 t
i
i
i
1
e
e
e
F
S /N
o
G
S
N )
i
i
the output is
o
a
1
2
2
3
N
(F)
3
e
a
a
A
v
k
A
k
k
A
cos 0 t
1
o
2
1
3
4
#
J
where S anrepressignal anoise power levels
i
available at thput to amplifier, and N the signal
1
2
1
4
o
o
2
3
a
a
k
A
cos 20
t
k
A
cos 30 t
1
2
1
3
and noise power els avae ae output, G the avail-
a
able gain, and Na tnoise added by the amplifier. Noise
figure irtant fie of merit used to characterize the
perft only single component but also the
entne of the factors which determine the
sys
assuming that all of the fourth and higher order terms are
negligible. For an amplifier, the fundamental component is
the desired output, and it can be rewritten as
3
2
.
a
k
A
1
(k /k ) A
1
1
3
4
Ð
(
IMAGY, DSB/SSB NF
This fundamental component is larger than k A (the ideally
linear gain) if k
1
0. For most prac
Image frecy refers to that frequency which is also
converted by the mixer, along with the desired RF
compent, to the intermediate frequency. This image fre-
quenis located at the same distance away from the LO,
but n the opposite side of the RF. For most mixers, it must
e filtered out before the signal is down-converted; other-
wise, an image-reject mixer must be used. Figure 7 illus-
trates the concept.
l
k
0 and smaller if k
0, and the gain compresses as the am
3
3
k
cal devices, k
3
tude A of the input signal gets larger. The 1 dB compression
point can be expressed in terms of either the inpuer or
the output power. Measurement of
increasing the input power while observih
until the gain is compressed by 1 dB.
can y
THIRD ORDER INTERCE
Third order intercept is rit usear-
acterize the linearity od as thpoint
at which the third ordct equals the
ideal linear, uncompre P
, OIP
1dB
3
involves two input signshown mathe-
matically (similar derivat the two are
figures of merit are illustrated in Figure 6.
closely related and OIP
dB. Theses two
3
TL/W/11814–17
FIGURE 7. Input and Output Spectrum of Mixers
10
Figures of Merit (Continued)
Due to the presence of image frequencies and the method
in which noise figure is defined, noise figures can be mea-
sured and specified in two ways: double side band (DSB) or
single side band (SSB). In DSB measurements, the image
frequency component of the input noise source is not fil-
tered and contributes to the total output noise at the inter-
mediate frequency. In SSB measurements. the image fre-
quency is filtered and the output noise is not caused by this
frequency component. In most mixer applications where
only one side band is wanted, SSB noise figure is 3 dB
higher than DSB noise figure.
ates the image frequency. The mixer is shown to use an LO
signal generated by a PLL synthesizer, but, depending on
the type of application, the LO signal could be generated by
a device as simple as a free-running oscillator. The IF output
is then typically filtered by a channel-select filter following
the mixer, and this signal can then be demodulated or go
through another down conversion, depending upon the in-
termediate frequency and system requirements. This exter-
nal filter rejects adjacent channels and also attenuates any
LO feed through. Figure 9 shows a cascade analysis of a
typical RF front-end subsystem in which the LMX2216 is
used. It includes the bandpass filter and the switch through
which the input RF signal goes in a radio system before
reaching the LNA. Typical values are used for the insertion
loss of the various filters in this example.
In this application, the LMX2216 is used in a radio receiver
front end, where it amplifies the signal from the antenna and
then down converts it to an intermediate frequency. The
image filter placed between the LNA and the mixer attenu-
TL/W/11814–18
FIGURE 8. Tyical Apns Circuit of the LMX2216
Data Stage
Gain
Cumulative Data
Ý
1
2
3
4
5
6
Ý
1
2
3
4
5
6
Comp
Filter
OIP3
0.0
0.0
6.0
Gain
N Fig
2.0
IIP3
97.9
96.6
OIP3
95.9
94.0
6.0
b
b
b
2.0
.6
2.0
2.6
9.7
6.7
Switch
LN
2.6
b
b
6.3
3.7
3.7
F
3.0
100.0
3.0
6.4
3.0
b
b
13.7
3.0
12.5
9.5
9.6
10.5
10.5
2.0
b
1.0
100.0
9.7
System Cum
Gain
N Fig
IIP
9.5 dB
9.7 dB
b
10.5 dBm
3
b
OIP
1.0 dBm
3
FIGURE 9. Cascade Analysis Example
11
Physical Dimensions inches (millimeters)
JEDEC 16-Lead (0.150 Wide) Small Outline Molded Pac
×
Order Number LMX2216M
For Tape and Reel Order NumbeMX2216M
NS Package Number M16
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