LMH9226 [TI]
具有集成平衡-非平衡变压器的单端至差分 2.3GHz 至 2.9GHz 低功耗射频增益块;
| 型号： | LMH9226 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 具有集成平衡-非平衡变压器的单端至差分 2.3GHz 至 2.9GHz 低功耗射频增益块 变压器 射频 |
| 文件： | 总20页 (文件大小：1013K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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LMH9226
ZHCSKK7 –DECEMBER 2019
具有平衡-非平衡变压器的 LMH9226 单端至差分 2.3Ghz 至 2.9Ghz 射频放
大器
1 特性
3 说明
1
•
•
•
单通道、单端输入至差分输出射频增益块放大器
LMH9226 是一款高性能、单通道、单端 50Ω 输入至
差分 50Ω 或 100Ω 输出的射频增益块放大器，支持
2.3GHz 至 2.9GHz 频段。该器件非常符合 5G m-
MIMO 或小型蜂窝基站 应用的要求。该器件集成了具
有无源平衡-非平衡变压器的单端输入和输出射频增益
块功能，它主要用于接收器信号链末级，以驱动模拟至
差分转换器 (ADC) 差分输入的满量程电压。
支持 2.6GHz 中心频率，具有 400MHz、1dB 带宽
在 1dB 带宽下、匹配 ZLOAD = 50Ω 时，具有 17dB
典型增益
•
•
在 1dB 带宽下噪声系数 < 3dB
在 2dBm 双音输出功率、匹配 ZLOAD = 50Ω 时，具
有 35dBm OIP3
•
•
•
匹配 ZLOAD = 50Ω 时，具有 17.5dBm 输出 P1dB
3.3V 单电源供电，具有 275mW 功耗
工作温度高达 TA = 105°C
LMH9226 提供 17dB 的典型增益，且在 2.6GHz 下具
有 35dBm 输出 IP3 的出色线性性能，而且噪声系数在
整个 400MHz 1dB 带宽范围内低于 3dB。该器件的单
端输入内部匹配 50Ω 阻抗。差分输出可轻松连接 50Ω
阻抗，无需任何外部匹配电路。如需匹配 100Ω 阻
抗，则需要外部匹配电路，这通常会在 2.6GHz 下产生
0.3dB 增益损失。
2 应用
•
•
•
•
•
•
•
•
•
•
5G m-MIMO 基站
有源天线系统，m-MIMO (AAS)
小型蜂窝基站
TDD/FDD 蜂窝基站
无线基础设施
该器件使用 3.3V 单电源供电，产生旁路功耗约
275mW，因此适用于高密度 5G 大规模多输入多输出
(MIMO) 应用。此外，该器件采用节省空间的 2mm ×
2mm、12 引脚 WQFN 封装。该器件的额定工作温度
高达 105°C，可提供稳健的系统设计。符合 JEDEC 标
准的 1.8V 断电引脚可为该器件快速断电和上电，适用
于时分双工 (TDD) 系统。
低成本无线电设备
单端至差分转换
平衡-非平衡变压器替代产品
射频增益块
适用于 GSPS ADC 的差分驱动器
器件信息(1)
器件型号
LMH9226
封装
WQFN (12)
封装尺寸（标称值）
2.00mm × 2.00mm
(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附
录。
LMH9226：2.3GHz 至 2.9GHz 单端输入至差分输出射频增益块放大器
fCENTER = 2.6 GHz, f1dB BW = 400 MHz
ZIN(DIFF) = 50 Ω
Analog Front-End
LNA
LMH9226
ADC
ZOUT(DIFF) = 50 Ω
ZIN = 50 Ω
1
本文档旨在为方便起见，提供有关 TI 产品中文版本的信息，以确认产品的概要。 有关适用的官方英文版本的最新信息，请访问 www.ti.com，其内容始终优先。 TI 不保证翻译的准确
性和有效性。 在实际设计之前，请务必参考最新版本的英文版本。
English Data Sheet: SBOS964
LMH9226
ZHCSKK7 –DECEMBER 2019
www.ti.com.cn
目录
7.4 Device Functional Modes........................................ 10
Application and Implementation ........................ 10
8.1 Application Information............................................ 10
8.2 Typical Application ................................................. 10
Power Supply Recommendations...................... 13
1
2
3
4
5
6
特性.......................................................................... 1
8
9
应用.......................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 2
Pin Configuration and Functions......................... 3
Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 4
6.5 Electrical Characteristics........................................... 5
6.6 Typical Characteristics.............................................. 6
Detailed Description .............................................. 9
7.1 Overview ................................................................... 9
7.2 Functional Block Diagram ......................................... 9
7.3 Feature Description................................................... 9
10 Layout................................................................... 14
10.1 Layout Guidelines ................................................. 14
10.2 Layout Example .................................................... 14
11 器件和文档支持 ..................................................... 15
11.1 文档支持................................................................ 15
11.2 接收文档更新通知 ................................................. 15
11.3 社区资源................................................................ 15
11.4 商标....................................................................... 15
11.5 静电放电警告......................................................... 15
11.6 Glossary................................................................ 15
12 机械、封装和可订购信息....................................... 15
7
4 修订历史记录
注：之前版本的页码可能与当前版本有所不同。
日期
修订版本
说明
2019 年 12 月
*
初始发行版。
2
Copyright © 2019, Texas Instruments Incorporated
LMH9226
www.ti.com.cn
ZHCSKK7 –DECEMBER 2019
5 Pin Configuration and Functions
RRL Package
12-Pin WQFN
Top View
VSS
INP
1
2
3
4
10
9
VSS
OUTP
OUTM
VSS
Thermal
pad
VSS
VSS
8
7
Not to scale
Pin Functions
PIN
I/O
DESCRIPTION
NO.
NAME
VSS
INP
1
Power
Input
Analog ground
2
RF single-ended input into amplifier
Analog ground
3
VSS
VSS
VSS
PD
Power
Power
Power
Input
4
Analog ground
5
Analog ground
6
Power-down connection. PD = 0 V, normal operation; PD = 1.8 V, power off mode.
Analog ground
7
VSS
OUTM
OUTP
VSS
VDD
NC
Power
Output
Output
Power
Power
—
8
RF single-ended output negative
RF single-ended output positive
Analog ground
9
10
11
Positive supply voltage (3.3 V)
12
Do not connect this pin
Thermal Pad
—
Connect the thermal pad to ground (VSS).
Copyright © 2019, Texas Instruments Incorporated
3
LMH9226
ZHCSKK7 –DECEMBER 2019
www.ti.com.cn
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
–0.3
–0.3
MAX
3.6
UNIT
V
Supply voltage
VDD
RF pins
INP, OUTP, OUTM
VDD
25
V
Continuous wave (CW) input
Digital input pin
fin = 2.6 GHz at INP
dBm
V
PD
TJ
–0.3
–65
VDD
150
150
Junction temperature
Storage temperature
°C
°C
Tstg
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per
±1000
ANSI/ESDA/JEDEC JS-001, allpins(1)
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), per JEDEC
specificationJESD22-C101, all pins(2)
±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
3.15
–40
–40
NOM
MAX
3.45
105
UNIT
V
VDD
TA
Supply voltage
3.3
Ambient temperature
Junction temperature
°C
TJ
125
°C
6.4 Thermal Information
LMH9226
THERMAL METRIC(1)
RRL PKG
12-PIN WQFN
74.8
UNIT
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
72.4
37.1
ΨJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
3.2
ΨJB
37.1
RθJC(bot)
14.2
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
4
Copyright © 2019, Texas Instruments Incorporated
LMH9226
www.ti.com.cn
ZHCSKK7 –DECEMBER 2019
6.5 Electrical Characteristics
TA = +25°C, VDD = 3.3 V, center frequency (fin) = 2.6 GHz, single-ended input impedance (ZIN) = 50 Ω, differential output
impedance (ZLOAD) = 50 Ω, POUT(TOTAL) = 8 dBm into ZLOAD = 50 Ω (unless otherwise noted)
PARAMETER
RF PERFORMANCE
TEST CONDITIONS
MIN
TYP
MAX
UNIT
fRF
RF frequency range
1-dB bandwidth
Gain
2300
2900
MHz
MHz
dB
BW1dB
S21
NF
Center Frequency (fin) = 2.6 GHz
fin = 2.6 GHz
400
17
Noise figure
Output P1dB
fin = 2.6 GHz, RS = 50 Ω
fin = 2.6 GHz, RLOAD = 50 Ω
3
dB
OIP1
17.5
dBm
fin = 2.6 GHz ± 10 MHz spacing,
POUT/TONE = 2 dBm
OIP3
Output IP3
35
dBm
(1)
Differential output gain imbalance
0.5
4
dB
degree
dB
(1)
Differential output phase imbalance
Input return loss
S11
fin = 2.6 GHz, BW = 400 MHz
fin = 2.6 GHz, BW = 400 MHz
fin = 2.6 GHz
–11
50
ZIN
Single ended input reference impedance
Differential output return loss
Differential ouput reference impedance
Reverse isolation
Ω
S22
–12
50
dB
ZLOAD
S12
Ω
–35
27
dB
(2)
CMRR
Common-mode rejection ratio
dB
SWITCHING AND DIGITAL INPUT CHARACTERISTICS
tON
tOFF
VIH
VIL
IIH
Turn-on time
PD pin = 1.8 V to 0 V, fin = 2.6 GHz
PD pin = 0 V to 1.8 V, fin = 2.6 GHz
At the PD pin
0.5
0.2
µs
µs
V
Turn-off time
(3)
(3)
(3)
(3)
High-level input voltage
Low-level input voltage
High-level input current
Low-level input current
1.4
At the PD pin
0.5
60
30
V
At the PD pin
28
10
µA
µA
IIL
At the PD pin
DC CURRENT AND POWER CONSUMPTION
(3)
IVDD_ON
IVDD_PD
Pdis
Supply current
PD pin = 0 V
PD pin = 1.8 V
VDD = 3.3 V
84
100
10
mA
mA
mW
(3)
Power-down current
Power dissipation
275
(1) Measured at fin = 2.6GHz, over the BW1dB
(2) CMRR is calculated using (S21-S31)/(S21+S31) for receive (1 is input port, 2 and 3 are differential output ports)
(3) 100% tested at TA = 25℃
版权 © 2019, Texas Instruments Incorporated
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LMH9226
ZHCSKK7 –DECEMBER 2019
www.ti.com.cn
6.6 Typical Characteristics
at TA = 25°C, VDD = 3.3 V, center frequency (fIN) = 2.6 GHz, single-ended input impedance (ZIN) = 50 Ω, differential output
impedance (ZLOAD) = 50 Ω, and POUT(TOTAL) = 8 dBm into ZLOAD = 50 Ω (unless otherwise noted)
20
19
18
17
16
15
14
13
12
18
17
16
15
14
TA = -40èC
TA = 25èC
TA = 85èC
TA = 105èC
VDD = 3.15 V
VDD = 3.3 V
VDD = 3.45 V
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
POUT = 2 dBm
POUT = 2 dBm
图 1. Gain vs Frequency and Temperature
图 2. Gain vs Frequency and Supply Voltage
0
0
TA = -40èC
TA = -40èC
-2
-2
TA = 25èC
TA = 25èC
TA = 85èC
TA = 105èC
TA = 85èC
TA = 105èC
-4
-6
-4
-6
-8
-8
-10
-12
-14
-16
-18
-20
-22
-10
-12
-14
-16
-18
-20
-22
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
图 3. Input Return Loss vs Frequency
图 4. Output Return Loss vs Frequency
0
42
TA = -40èC
-5
40
38
36
34
32
30
28
26
24
TA = 25èC
TA = 85èC
TA = 105èC
-10
-15
-20
-25
-30
-35
-40
-45
-50
TA = -40èC
TA = 25èC
TA = 85èC
TA = 105èC
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
POUT/TONE = 2 dBm, ±1-MHz tone spacing
图 5. Reverse Isolation vs Frequency
图 6. Output IP3 vs Frequency and Temperature
6
版权 © 2019, Texas Instruments Incorporated
LMH9226
www.ti.com.cn
ZHCSKK7 –DECEMBER 2019
Typical Characteristics (接下页)
at TA = 25°C, VDD = 3.3 V, center frequency (fIN) = 2.6 GHz, single-ended input impedance (ZIN) = 50 Ω, differential output
impedance (ZLOAD) = 50 Ω, and POUT(TOTAL) = 8 dBm into ZLOAD = 50 Ω (unless otherwise noted)
42
40
38
36
34
32
30
28
26
24
42
40
38
36
34
32
30
28
26
24
TA = -40èC
TA = 25èC
TA = 85èC
TA = 105èC
VDD = 3.15 V
VDD = 3.3 V
VDD = 3.45 V
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
0
1
2
3
4
5
Output Power/Tone (dBm)
6
7
8
POUT/TONE = 2 dBm, ±1-MHz tone spacing
f = 2.6 GHz, ±1-MHz tone spacing
图 7. Output IP3 vs Frequency and Supply Voltage
图 8. Output IP3 vs Output Power per Tone
42
20
19
18
17
16
15
14
13
12
40
38
36
34
32
30
28
TA = -40èC
TA = 25èC
TA = 85èC
TA = 105èC
Tone Spacing = ê 1 MHz
Tone Spacing = ê 10 MHz
Tone Spacing = ê 100 MHz
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
POUT/TONE = 2 dBm
图 9. Output IP3 vs Frequency and Tone Spacing
图 10. Output P1dB vs Frequency and Temperature
20
5
19
18
17
16
15
14
13
12
4
3
2
1
0
TA = -40èC
TA = 25èC
TA = 85èC
TA = 105èC
VDD = 3.15 V
VDD = 3.3 V
VDD = 3.45 V
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
ZSOURCE = 50 Ω
图 11. Output P1dB vs Frequency and Supply Voltage
图 12. Noise Figure vs Frequency and Temperature
版权 © 2019, Texas Instruments Incorporated
7
LMH9226
ZHCSKK7 –DECEMBER 2019
www.ti.com.cn
Typical Characteristics (接下页)
at TA = 25°C, VDD = 3.3 V, center frequency (fIN) = 2.6 GHz, single-ended input impedance (ZIN) = 50 Ω, differential output
impedance (ZLOAD) = 50 Ω, and POUT(TOTAL) = 8 dBm into ZLOAD = 50 Ω (unless otherwise noted)
5
4
3
2
1
0
32
30
28
26
24
22
20
18
16
TA = -40èC
TA = 25èC
TA = 85èC
TA = 105èC
VDD = 3.15 V
VDD = 3.3 V
VDD = 3.45 V
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
ZSOURCE = 50 Ω
图 13. Noise Figure vs Frequency and Supply Voltage
图 14. CMRR vs Frequency
82
82
TA = -40èC
TA = 25èC
81
81
80
79
78
77
76
TA = 85èC
TA = 105èC
80
79
78
77
VDD = 3.15 V
VDD = 3.3 V
VDD = 3.45 V
76
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
图 15. Quiescent Current vs Frequency and Temperature
图 16. Quiescent Current vs Frequency and Supply Voltage
8
版权 © 2019, Texas Instruments Incorporated
LMH9226
www.ti.com.cn
ZHCSKK7 –DECEMBER 2019
7 Detailed Description
7.1 Overview
The LMH9226 is single-ended, 50-Ω input to differential 50-Ω or 100-Ω output RF gain block amplifier used in
2.3-GHz to 2.9-GHz, frequency-band, 5G, m-MIMO TDD receiver applications. The device provides a 17-dB fixed
power gain with excellent linearity and noise performance across 400 MHz of the 1-dB bandwidth at the 2.6-GHz
center frequency. The device is internally matched for a 50-Ω input impedance at 2.6 GHz. The device
differential output can be matched to the 50-Ω impedance without external matching circuitry, or to the 100-Ω
impedance with external matching circuitry (see the Application and Implementation section for details). The
device is typically used in the final stage of a receive signal chain to drive the differential input of an analog-to-
differential converter (ADC), while providing additional gain to a low-noise amplifier (LNA) to increase dynamic
range and the required single-ended to differential conversion.
The LMH9226 has an on-chip active bias circuitry to maintain device performance over a wide temperature and
supply voltage range. The included power-down function allows the amplifier to shut down and save power when
the amplifier is not needed. Fast shut-down and start-up enable the amplifier to be used in a host of time division
duplex (TDD) applications.
Operating on a single 3.3-V supply and consuming 84 mA of typical supply current, the device is available in a
2-mm × 2-mm, 12-pin WQFN package.
7.2 Functional Block Diagram
AVDD = +3.3V
Active Bias and
Temperature
Compensation
Power Down (PD)
Balanced RF OUTP (0•)
Single-Ended RF Input (INP)
Balanced RF OUTM (180•)
ZIN = 50-Ω match
AVSS (GND)
ZOUT(DIFF) = 50-Ω match
7.3 Feature Description
As shown in 图 17, the LMH9226 integrates the functionality of a single-ended RF amplifier and passive balun in
a traditional receive application, achieving a small form factor with good linearity and noise performance. The
active balun implementation, along with a higher operating temperature of 105°C, allows for a more robust
receiver system implementation compared to a passive balun that is prone to reliability failures at high
temperatures. The high-temperature operation is achieved by the on-chip, active bias circuitry that maintains
device performance over a wide temperature and supply voltage range.
LMH9226
INP
OUTP
OUTM
GND
图 17. Single-Ended Input to Differential Output, Active Balun Implementation
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LMH9226
ZHCSKK7 –DECEMBER 2019
www.ti.com.cn
7.4 Device Functional Modes
The LMH9226 features a PD pin that must be connected to GND for normal operation. For power-down mode,
connect the PD pin to a logic high voltage of 1.8 V.
8 Application and Implementation
注
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The LMH9226 is a single-ended, 50-Ω input to differential 50-Ω or 100-Ω output RF gain block amplifier, used in
the receive path of a 2.6-GHz center frequency, 5G, TDD m-MIMO or small cell base station. The device
replaces the traditional single-ended RF amplifier and passive balun offering a smaller footprint solution to the
customer. TI recommends following good RF layout and grounding techniques to maximize the device
performance.
8.2 Typical Application
The LMH9226 is typically used in a four transmit and four receive (4T/4R) array of active antenna system for 5G,
TDD, wireless base station applications. Such a system is shown in 图 18, where the LMH9226 is used in the
receive path as the final stage differential driver to an ADC input. TI typically recommends reducing the trace
distance between the LMH9226 output and the ADC input to minimize amplitude and phase imbalance during the
single-to-differential conversion.
Transceiver Board
LMH9226
LNA
DC-DC Converter
LDO
+3.3 V
LMH9226
LNA
Tx AFE
PA
fO = 2.6 GHz, f-1dB = 400 MHz
Tx AFE
PA
f-1dB
Analog Front End
PA
fO
Tx AFE
Tx AFE
PA
LNA
LMH9226
DC-DC Converter
LDO
+3.3 V
LNA
LMH9226
图 18. LMH9226 in a 4T/4R 5G Active Antenna System
10
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LMH9226
www.ti.com.cn
ZHCSKK7 –DECEMBER 2019
Typical Application (接下页)
The 4T/4R system is easily scaled to 16T/16R, 64T/64R, or higher antenna arrays that result in proportional
scaling of the overall system power dissipation. As a result of the proportional scaling factor for multiple channels
in a system, the individual device power consumption must be reduced to dissipate less overall heat in the
system. Operating on a single 3.3-V supply, the LMH9226 consumes only 275 mW and therefore provides power
saving to the customer. Multiple LMH9226 devices can be powered from a single DC/DC converter or a low-
dropout regulator (LDO) operating on a 3.3-V supply. A DC/DC converter provides the most power efficient way
of generating the 3.3-V supply. However, care must be taken when using the DC/DC converter to minimize the
switching noise using inductor chokes and adequate isolation must be provided between the analog and digital
supplies.
8.2.1 Design Requirements
表 1 shows example design requirements for an RF amplifier in a typical 5G, active antenna TDD system. The
LMH9226 meets these requirements.
表 1. Design Parameters
DESIGN PARAMETERS
Frequency range and 1-dB BW
Configuration
EXAMPLE VALUE
2300 MHz to 2900 MHz with 400 MHz of 1-dB BW
Single-ended 50-Ω input to differential 50-Ω output
Power gain
> 15 dB
> 32 dBm
< 4 dB
Output IP3 at POUT/TONE = 2 dBm
Noise figure at Zin = 50 Ω
Output P1dB
< 17 dBm
< 350 mW
< 1 µs
Power consumption
Turn-on time
Package size
2 mm × 2 mm2
8.2.2 Detailed Design Procedure
The LMH9226 is a single-to-differential RF gain block amplifier for a 2.6-GHz center frequency application with
400 MHz of the 1-dB bandwidth. 图 19 shows a single receive channel consisting of a low-noise amplifier (LNA)
that sits close to the antenna and drives the signal into a single-ended, 50-Ω coaxial cable that then connects to
a transceiver board. The LMH9226 that sits at the transceiver board input converts this single-ended signal
received from the coax cable into a differential signal, thereby offering low noise and distortion performance while
interfacing with the receiver analog front-end (AFE). The LMH9226 input impedance must be matched to 50 Ω to
prevent any signal reflections resulting from the coax cable. The device differential output interfaces directly with
the differential input of an AFE. The output matching is optimized for a 50-Ω output at the 2.6-GHz center
frequency with 400 MHz of the 1-dB bandwidth. The AFE input impedance must be matched to 50 Ω at 2.6 GHz
as well to prevent any ripple in the frequency response.
f-1dB
fO = 2.6 GHz, f-1dB = 400 MHz
fO
ZIN(DIFF) = 50 Ω match
Analog Front-End
LNA
ADC
LMH9226
C1
ZOUT(DIFF) = 50 Ω match
ZIN = 50 Ω match
图 19. LMH9226 in a Receive Application Driving an AFE (ZOUT(DIFF) = 50 Ω)
版权 © 2019, Texas Instruments Incorporated
11
LMH9226
ZHCSKK7 –DECEMBER 2019
www.ti.com.cn
For interfacing with a 100-Ω differential input AFE, as shown in 图 20, an external matching circuitry is needed
close to the LMH9226 output. 表 2 lists example recommended component values when transforming the
LMH9226 output impedance from 50 Ω to 100 Ω. The component values must be tweaked on the board,
depending on the trace length between the matching circuitry and the AFE input to maintain 400 MHz of the 1-dB
BW at the 2.6-GHz center frequency. LC component values must be selected with Q(min) > 30 that have a self
resonant frequency (SRF) sufficiently higher than the desired frequency of operation. 图 21 and 图 22 provide a
comparison of device performance when interfacing with a 50-Ω output matching as compared to a 100-Ω output
matching. As depicted in 图 21, the forward path gain (SDS21) is slightly lower for the 100-Ω differential output
impedance because of the extra loss in the external matching circuitry.
f-1dB
fO = 2.6 GHz, f-1dB = 400 MHz
fO
ZOUT(DIFF) = 50 Ω
ZIN(DIFF) = 100 Ω
Analog Front-End
C2
LNA
ADC
LMH9226
C1
L2
L1
C3
ZOUT(DIFF) = 100 Ω
ZIN = 50 Ω match
Output Matching
Network
图 20. LMH9226 in a Receive Application Driving an AFE (ZOUT(DIFF) = 100 Ω)
表 2. Output Matching Network Component Values
COMPONENT
VALUE
2.2 pF
C2, C3
L1
6.2 nH
L2
Do not install (DNI)
Following the recommended RF layout with good quality RF components and local DC bypass capacitors
ensures optimal performance is achieved. TI provides various support materials including S-parameter and ADS
models to allow the design to be optimized to the application-specific performance needs.
8.2.3 Application Curves
20
19
18
17
16
15
14
13
12
0
-2
ZLOAD = 50 W
ZLOAD = 100 W
ZLOAD = 50 W
ZLOAD = 100 W
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
-24
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
图 21. Power Gain vs Frequency and ZLOAD
图 22. Output Return Loss vs Frequency and ZLOAD
12
版权 © 2019, Texas Instruments Incorporated
LMH9226
www.ti.com.cn
ZHCSKK7 –DECEMBER 2019
9 Power Supply Recommendations
The LMH9226 operates on a common nominal 3.3-V supply voltage. The supply voltage is recommended to be
isolated through the decoupling capacitors placed close to the device. Select capacitors with a self-resonant
frequency near the application frequency. When multiple capacitors are used in parallel to create a broadband
decoupling network, place the capacitor with the higher self-resonant frequency closer to the device.
The LMH9226 can be powered from a DC/DC converter or an LDO operating on a 3.3-V supply. A DC/DC
converter provides the most power efficient way of generating the 3.3-V supply. However, care must be taken
when using the DC/DC converter to minimize the switching noise from inductor chokes and adequate isolation
must be provided between the analog and digital supplies.
版权 © 2019, Texas Instruments Incorporated
13
LMH9226
ZHCSKK7 –DECEMBER 2019
www.ti.com.cn
10 Layout
10.1 Layout Guidelines
When dealing with an RF amplifier with relatively high gain and a center frequency of 2.6 GHz, certain board
layout precautions must be taken to ensure stability and optimum performance. TI recommends that the
LMH9226 board be multi-layered to improve thermal performance, grounding, and power-supply decoupling. 图
23 shows a good layout example. In 图 23, only the top signal layer and its adjacent ground reference plane are
shown.
•
Excellent electrical connection from the thermal pad to the board ground is essential. Use the recommended
footprint, solder the pad to the board, and do not include a solder mask under the pad.
•
•
Connect the pad ground to the device terminal ground on the top board layer.
Verify that the return DC and RF current path have a low impedance ground plane directly under the package
and that the RF signal traces into and out of the amplifier.
•
•
•
•
Ensure that ground planes on the top and any internal layers are well stitched with vias.
Do not route RF signal lines over breaks in the reference ground plane.
Avoid routing clocks and digital control lines near RF signal lines.
Do not route RF or DC signal lines over noisy power planes. Ground is the best reference, although clean
power planes can serve where necessary.
•
•
Place supply decoupling close to the device.
The differential output traces must be symmetrical in order to achieve the best linearity performance.
A board layout software package can simplify the trace thickness design to maintain impedances for controlled
impedance signals. To isolate the affect of board parasitic on frequency response, TI recommends placing the
external output matching resistors close to the amplifier output pins. See the LMH9226 Evaluation Module user
guide for more details on board layout and design.
10.2 Layout Example
Supply Bypass Caps
close to the device
Device
Matched
Differential trace
Output Matching
LC Network
Stitched Vias
图 23. Supply Bypass and Output Matching
14
版权 © 2019, Texas Instruments Incorporated
LMH9226
www.ti.com.cn
ZHCSKK7 –DECEMBER 2019
11 器件和文档支持
11.1 文档支持
11.1.1 相关文档
请参阅如下相关文档：
德州仪器 (TI)，《LMH9226 评估模块》 用户指南
11.2 接收文档更新通知
要接收文档更新通知，请导航至 ti.com.cn 上的器件产品文件夹。单击右上角的通知我进行注册，即可每周接收产
品信息更改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。
11.3 社区资源
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.4 商标
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 静电放电警告
ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可
能会损坏集成电路。
ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。 精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可
能会导致器件与其发布的规格不相符。
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 机械、封装和可订购信息
以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。数据如有变更，恕不另行通知，且
不会对此文档进行修订。如需获取此数据表的浏览器版本，请查阅左侧的导航栏。
版权 © 2019, Texas Instruments Incorporated
15
PACKAGE OPTION ADDENDUM
www.ti.com
28-Sep-2021
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
LMH9226IRRLR
ACTIVE
WQFN
RRL
12
3000 RoHS & Green
NIPDAUAG
Level-2-260C-1 YEAR
-40 to 105
22GO
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OUTLINE
RRL0012A
WQFN - 0.8 mm max height
S
C
A
L
E
5
.
0
0
0
PLASTIC QUAD FLATPACK - NO LEAD
2.1
1.9
A
B
PIN 1 INDEX AREA
2.1
1.9
0.8
0.7
C
SEATING PLANE
0.08 C
0.05
0.00
2X 0.5
SYMM
EXPOSED
THERMAL PAD
(0.2) TYP
(0.3) TYP
7
5
6
4
2X 1.5
SYMM
13
0.8 0.1
8X 0.5
10
1
0.3
0.2
12X
12
11
PIN 1 ID
0.1
C A B
0.35
0.25
12X
0.05
4224942/A 04/2019
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
www.ti.com
EXAMPLE BOARD LAYOUT
RRL0012A
WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
(
0.8)
SYMM
12
SEE SOLDER MASK
DETAIL
12X (0.5)
11
10
12X (0.25)
1
SYMM
(1.9)
13
8X (0.5)
(R0.05) TYP
4
7
(
0.2) TYP
VIA
6
5
(1.9)
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE: 20X
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
METAL UNDER
SOLDER MASK
METAL EDGE
EXPOSED METAL
SOLDER MASK
OPENING
EXPOSED
METAL
SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
SOLDER MASK DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4224942/A 04/2019
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
www.ti.com
EXAMPLE STENCIL DESIGN
RRL0012A
WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
(
0.76)
11
12X (0.5)
12
12X (0.25)
10
1
SYMM
(1.9)
13
8X (0.5)
4
7
(R0.05) TYP
5
6
SYMM
(1.9)
SOLDER PASTE EXAMPLE
BASED ON 0.125 MM THICK STENCIL
SCALE: 20X
EXPOSED PAD 13
90% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
4224942/A 04/2019
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
www.ti.com
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