LMH6624MA [TI]
LMH6624/LMH6626 Single/Dual Ultra Low Noise Wideband Operational Amplifier; LMH6624 / LMH6626单通道/双通道超低噪声宽带运算放大器
| 型号： | LMH6624MA |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | LMH6624/LMH6626 Single/Dual Ultra Low Noise Wideband Operational Amplifier |
| 文件： | 总31页 (文件大小：1608K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LMH6624
www.ti.com
SNOSA42F –NOVEMBER 2002–REVISED MARCH 2013
LMH6624/LMH6626 Single/Dual Ultra Low Noise Wideband Operational Amplifier
Check for Samples: LMH6624
1
FEATURES
DESCRIPTION
The LMH6624/LMH6626 offer wide bandwidth
(1.5GHz for single, 1.3GHz for dual) with very low
input noise (0.92nV/√Hz, 2.3pA/√Hz) and ultra low dc
errors (100μV VOS, ±0.1μV/°C drift) providing very
precise operational amplifiers with wide dynamic
range. This enables the user to achieve closed-loop
gains of greater than 10, in both inverting and non-
inverting configurations.
2
•
VS = ±6V, TA = 25°C, AV = 20, (Typical values
unless specified)
•
•
•
•
•
•
•
•
Gain Bandwidth (LMH6624) 1.5GHz
Input Voltage Noise 0.92nV/√Hz
Input Offset Voltage (limit over temp) 700µV
Slew Rate 350V/μs
Slew Rate (AV = 10) 400V/μs
The LMH6624 (single) and LMH6626’s (dual)
traditional voltage feedback topology provide the
following benefits: balanced inputs, low offset voltage
and offset current, very low offset drift, 81dB open
loop gain, 95dB common mode rejection ratio, and
88dB power supply rejection ratio.
HD2 @ f = 10MHz, RL = 100Ω −63dBc
HD3 @ f = 10MHz, RL = 100Ω −80dBc
Supply Voltage Range (dual supply) ±2.5V to
±6V
•
•
•
Supply Voltage Range (single supply) +5V to
+12V
The LMH6624/LMH6626 operate from ± 2.5V to ± 6V
in dual supply mode and from +5V to +12V in single
supply configuration.
Improved Replacement for the CLC425
(LMH6624)
LMH6624 is offered in SOT-23-5 and SOIC-8
packages.
Stable for Closed Loop |AV| ≥ 10
The LMH6626 is offered in SOIC-8 and VSSOP-8
packages.
APPLICATIONS
•
•
•
•
•
•
•
Instrumentation Sense Amplifiers
Ultrasound Pre-amps
Magnetic Tape & Disk Pre-amps
Wide band active filters
Professional Audio Systems
Opto-electronics
Medical Diagnostic Systems
Connection Diagram
LMH6624 5-Pin SOT-23
LMH6624 8-Pin SOIC
LMH6626 8-Pin SOIC/VSSOP
1
8
N/C
N/C
1
5
+
V
OUT
2
3
4
7
6
5
+
-IN
-
V
-
2
V
+IN
OUT
N/C
+
-
+
4
3
-
-IN
+IN
V
Figure 1. Top View
Figure 2. Top View
Figure 3. Top View
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2002–2013, Texas Instruments Incorporated
LMH6624
SNOSA42F –NOVEMBER 2002–REVISED MARCH 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
(1)
Absolute Maximum Ratings
ESD Tolerance
(2)
Human Body Model
Machine Model
2000V
200V
(3)
VIN Differential
±1.2V
13.2V
V+ +0.5V, V− −0.5V
Supply Voltage (V+ - V−)
Voltage at Input pins
Soldering Information
Infrared or Convection (20 sec.)
Wave Soldering (10 sec.)
235°C
260°C
Storage Temperature Range
−65°C to +150°C
+150°C
(4) (5)
Junction Temperature
,
(1) Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics.
(2) Human body model, 1.5kΩ in series with 100pF.
(3) Machine Model, 0Ω in series with 200pF.
(4) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C.
(5) The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.
(1)
Operating Ratings
Operating Temperature Range
(2) (3)
,
−40°C to +125°C
(3)
Package Thermal Resistance (θJA
)
SOIC-8
166°C/W
265°C/W
235°C/W
SOT23–5
VSSOP-8
(1) Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics.
(2) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C.
(3) The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.
2
Submit Documentation Feedback
Copyright © 2002–2013, Texas Instruments Incorporated
Product Folder Links: LMH6624
LMH6624
www.ti.com
SNOSA42F –NOVEMBER 2002–REVISED MARCH 2013
±2.5V Electrical Characteristics
Unless otherwise specified, all limits ensured at TA = 25°C, V+ = 2.5V, V− = −2.5V, VCM = 0V, AV = +20, RF = 500Ω, RL =
(1)
100Ω. Boldface limits apply at the temperature extremes. See
.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(2)
(3)
(2)
Dynamic Performance
fCL
−3dB BW
VO = 400mVPP (LMH6624)
VO = 400mVPP (LMH6626)
VO = 2VPP, AV = +20 (LMH6624)
VO = 2VPP, AV = +20 (LMH6626)
VO = 2VPP, AV = +10 (LMH6624)
VO = 2VPP, AV = +10 (LMH6626)
VO = 400mV Step, 10% to 90%
VO = 400mV Step, 10% to 90%
VO = 2VPP (Step)
90
80
MHz
SR
Slew Rate(4)
300
290
360
340
4.1
4.1
20
V/μs
tr
tf
Rise Time
ns
ns
ns
Fall Time
ts
Settling Time 0.1%
Distortion and Noise Response
en
Input Referred Voltage Noise
f = 1MHz (LMH6624)
0.92
1.0
nV/√Hz
pA/√Hz
f = 1MHz (LMH6626)
in
Input Referred Current Noise
f = 1MHz (LMH6624)
2.3
f = 1MHz (LMH6626)
1.8
HD2
HD3
2nd Harmonic Distortion
3rd Harmonic Distortion
fC = 10MHz, VO = 1VPP, RL 100Ω
fC = 10MHz, VO = 1VPP, RL 100Ω
−60
−76
dBc
dBc
Input Characteristics
VOS
IOS
IB
Input Offset Voltage
VCM = 0V
−0.75
−0.95
−0.25
+0.75
+0.95
mV
(5)
Average Drift
VCM = 0V
VCM = 0V
±0.25
μV/°C
μA
Input Offset Current
−1.5
−2.0
−0.05
+1.5
+2.0
(5)
Average Drift
VCM = 0V
VCM = 0V
2
nA/°C
Input Bias Current
13
+20
μA
+25
(5)
Average Drift
VCM = 0V
12
6.6
4.6
0.9
2.0
nA/°C
MΩ
kΩ
(6)
RIN
Input Resistance
Common Mode
Differential Mode
Common Mode
Differential Mode
Input Referred,
(6)
CIN
Input Capacitance
pF
CMRR
Common Mode Rejection Ratio
dB
VCM = −0.5 to +1.9V
VCM = −0.5 to +1.75V
87
85
90
Transfer Characteristics
AVOL Large Signal Voltage Gain
(LMH6624)
RL = 100Ω, VO = −1V to +1V
75
70
79
79
dB
dB
(LMH6626)
72
RL = 100Ω, VO = −1V to +1V
67
Xt
Crosstalk Rejection
f = 1MHz (LMH6626)
−75
(1) Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical
tables under conditions of internal self-heating where TJ > TA. Absolute maximum ratings indicate junction temperature limits beyond
which the device may be permanently degraded, either mechanically or electrically.
(2) All limits are specified by testing or statistical analysis.
(3) Typical Values represent the most likely parametric norm.
(4) Slew rate is the slowest of the rising and falling slew rates.
(5) Average drift is determined by dividing the change in parameter at temperature extremes into the total temperature change.
(6) Simulation results.
Copyright © 2002–2013, Texas Instruments Incorporated
Submit Documentation Feedback
3
Product Folder Links: LMH6624
LMH6624
SNOSA42F –NOVEMBER 2002–REVISED MARCH 2013
www.ti.com
±2.5V Electrical Characteristics (continued)
Unless otherwise specified, all limits ensured at TA = 25°C, V+ = 2.5V, V− = −2.5V, VCM = 0V, AV = +20, RF = 500Ω, RL =
100Ω. Boldface limits apply at the temperature extremes. See (1)
.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(2)
(3)
(2)
Output Characteristics
VO
Output Swing
RL = 100Ω
±1.1
±1.0
±1.5
±1.7
V
No Load
±1.4
±1.25
RO
ISC
Output Impedance
f ≤ 100KHz
10
mΩ
Output Short Circuit Current
(LMH6624)
90
145
Sourcing to Ground
75
(7) (8)
ΔVIN = 200mV
,
(LMH6624)
Sinking to Ground
ΔVIN = −200mV
90
75
145
120
120
100
75
(7) (8)
,
mA
(LMH6626)
Sourcing to Ground
ΔVIN = 200mV
60
50
(7) (8)
,
(LMH6626)
Sinking to Ground
ΔVIN = −200mV
60
50
(7) (8)
,
IOUT
Output Current
(LMH6624)
Sourcing, VO = +0.8V
Sinking, VO = −0.8V
mA
(LMH6626)
Sourcing, VO = +0.8V
Sinking, VO = −0.8V
Power Supply
PSRR
Power Supply Rejection Ratio
VS = ±2.0V to ±3.0V
No Load
82
80
90
dB
IS
Supply Current (per channel)
11.4
16
mA
18
(7) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C.
(8) Short circuit test is a momentary test. Output short circuit duration is 1.5ms.
4
Submit Documentation Feedback
Copyright © 2002–2013, Texas Instruments Incorporated
Product Folder Links: LMH6624
LMH6624
www.ti.com
SNOSA42F –NOVEMBER 2002–REVISED MARCH 2013
±6V Electrical Characteristics
Unless otherwise specified, all limits ensured at TA = 25°C, V+ = 6V, V− = −6V, VCM = 0V, AV = +20, RF = 500Ω, RL = 100Ω.
(1)
Boldface limits apply at the temperature extremes. See
.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(2)
(3)
(2)
Dynamic Performance
fCL
−3dB BW
VO = 400mVPP (LMH6624)
VO = 400mVPP (LMH6626)
VO = 2VPP, AV = +20 (LMH6624)
VO = 2VPP, AV = +20 (LMH6626)
VO = 2VPP, AV = +10 (LMH6624)
VO = 2VPP, AV = +10 (LMH6626)
VO = 400mV Step, 10% to 90%
VO = 400mV Step, 10% to 90%
VO = 2VPP (Step)
95
85
MHz
(4)
SR
Slew Rate
350
320
400
360
3.7
3.7
18
V/μs
tr
tf
Rise Time
Fall Time
ns
ns
ns
ts
Settling Time 0.1%
Distortion and Noise Response
en
Input Referred Voltage Noise
f = 1MHz (LMH6624)
0.92
1.0
nV/√Hz
pA/√Hz
f = 1MHz (LMH6626)
in
Input Referred Current Noise
f = 1MHz (LMH6624)
2.3
f = 1MHz (LMH6626)
1.8
HD2
HD3
2nd Harmonic Distortion
3rd Harmonic Distortion
fC = 10MHz, VO = 1VPP, RL 100Ω
fC = 10MHz, VO = 1VPP, RL 100Ω
−63
−80
dBc
dBc
Input Characteristics
VOS Input Offset Voltage
VCM = 0V
VCM = 0V
−0.5
−0.7
±0.10
+0.5
+0.7
mV
(5)
Average Drift
±0.2
0.05
μV/°C
μA
IOS
Input Offset Current Average Drift (LMH6624)
−1.1
−2.5
1.1
2.5
(5)
VCM = 0V
(LMH6626)
VCM = 0V
−2.0
−2.5
0.1
2.0
2.5
VCM = 0V
0.7
13
nA/°C
IB
Input Bias Current
VCM = 0V
+20
μA
+25
(5)
Average Drift
VCM = 0V
12
6.6
4.6
0.9
2.0
nA/°C
MΩ
(6)
RIN
Input Resistance
Common Mode
Differential Mode
Common Mode
Differential Mode
Input Referred,
kΩ
(6)
CIN
Input Capacitance
pF
CMRR
Common Mode Rejection Ratio
dB
VCM = −4.5 to +5.25V
VCM = −4.5 to +5.0V
90
87
95
Transfer Characteristics
AVOL Large Signal Voltage Gain
(LMH6624)
RL = 100Ω, VO = −3V to +3V
77
72
81
80
dB
(LMH6626)
74
RL = 100Ω, VO = −3V to +3V
70
(1) Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical
tables under conditions of internal self-heating where TJ > TA. Absolute maximum ratings indicate junction temperature limits beyond
which the device may be permanently degraded, either mechanically or electrically.
(2) All limits are specified by testing or statistical analysis.
(3) Typical Values represent the most likely parametric norm.
(4) Slew rate is the slowest of the rising and falling slew rates.
(5) Average drift is determined by dividing the change in parameter at temperature extremes into the total temperature change.
(6) Simulation results.
Copyright © 2002–2013, Texas Instruments Incorporated
Submit Documentation Feedback
5
Product Folder Links: LMH6624
LMH6624
SNOSA42F –NOVEMBER 2002–REVISED MARCH 2013
www.ti.com
±6V Electrical Characteristics (continued)
Unless otherwise specified, all limits ensured at TA = 25°C, V+ = 6V, V− = −6V, VCM = 0V, AV = +20, RF = 500Ω, RL = 100Ω.
Boldface limits apply at the temperature extremes. See (1)
.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(2)
(3)
(2)
Xt
Crosstalk Rejection
f = 1MHz (LMH6626)
−75
dB
Output Characteristics
VO
Output Swing
(LMH6624)
RL = 100Ω
±4.4
±4.3
±4.9
±5.2
±4.8
±5.2
(LMH6624)
No Load
±4.8
±4.65
V
(LMH6626)
RL = 100Ω
±4.3
±4.2
(LMH6626)
No Load
±4.8
±4.65
RO
ISC
Output Impedance
f ≤ 100KHz
10
mΩ
Output Short Circuit Current
(LMH6624)
100
156
Sourcing to Ground
85
(7) (8)
ΔVIN = 200mV
,
(LMH6624)
Sinking to Ground
ΔVIN = −200mV
100
85
156
120
120
100
80
(7) (8)
,
mA
(LMH6626)
Sourcing to Ground
ΔVIN = 200mV
65
55
(7) (8)
,
(LMH6626)
Sinking to Ground
ΔVIN = −200mV
65
55
(7) (8)
,
IOUT
Output Current
(LMH6624)
Sourcing, VO = +4.3V
Sinking, VO = −4.3V
mA
(LMH6626)
Sourcing, VO = +4.3V
Sinking, VO = −4.3V
Power Supply
PSRR
Power Supply Rejection Ratio
VS = ±5.4V to ±6.6V
No Load
82
80
88
12
dB
IS
Supply Current (per channel)
16
mA
18
(7) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C.
(8) Short circuit test is a momentary test. Output short circuit duration is 1.5ms.
6
Submit Documentation Feedback
Copyright © 2002–2013, Texas Instruments Incorporated
Product Folder Links: LMH6624
LMH6624
www.ti.com
SNOSA42F –NOVEMBER 2002–REVISED MARCH 2013
Typical Performance Characteristics
Voltage Noise
vs.
Frequency
Current Noise
vs.
Frequency
Figure 4.
Figure 5.
Inverting Frequency Response
Inverting Frequency Response
5
4
5
4
V
V
= ±2.5V
V
V
= ±6V
= 5mV
= 100W
S
S
= 5mV
IN
PP
IN
PP
3
2
1
0
3
2
1
0
A
V
= -10
R
= 100W
R
L
L
A
= -10
V
A
= -20
V
A
= -20
V
A
A
= -40
= -60
V
A
A
= -40
= -60
V
-1
-2
-1
-2
V
V
V
V
-3
-4
-5
-3
-4
-5
A
= -80
A
= -80
A
= -100
A
V
= -100
V
1M
100M
1M
100M
1k
100k
10M
1G
1k
100k
10M
1G
10k
10k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 6.
Figure 7.
Non-Inverting Frequency Response
Non-Inverting Frequency Response
5
4
5
4
V
= ±2.5V
V
= ±6V
S
S
R
= 500W
R
= 500W
F
F
3
3
2
1
V
= 2V
PP
V
= 2V
PP
O
O
2
1
A
V
= +10
A
V
= +10
0
0
A
= +200
= +100
V
A = +200
V
-1
-2
-3
-4
-1
A
= +100
A
V
V
-2
-3
A
= +40
A
= +40
V
V
A
V
= +30
A
= +30
V
-4
-5
A
= +20
A
= +20
V
V
-5
10k 100k 1M
10M 100M 1G
1k
100k 1M
10M
1G
1k
10k
100M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 8.
Figure 9.
Copyright © 2002–2013, Texas Instruments Incorporated
Submit Documentation Feedback
7
Product Folder Links: LMH6624
LMH6624
SNOSA42F –NOVEMBER 2002–REVISED MARCH 2013
www.ti.com
Typical Performance Characteristics (continued)
Open Loop Frequency Response Over Temperature
Open Loop Frequency Response Over Temperature
80
70
60
50
40
30
20
10
0
0
-40°C
25°C
-45
PHASE
-90
125°C
-40°C
-135
-180
-225
-270
-315
-360
125°C
25°C
GAIN
V
= ±2.5V
1M
S
100k
10M
100M
1G
FREQUENCY (Hz)
Figure 10.
Figure 11.
Frequency Response with Cap. Loading
Frequency Response with Cap. Loading
5
5
33pF
4
3
33pF
4
3
15pF
5pF
15pF
5pF
10pF
10pF
2
2
1
1
0
0
0pF
0pF
V
A
= ±6V
= +10
V
A
= ±2.5V
= +10
S
-1
-2
-3
-4
-5
S
V
-1
-2
-3
-4
-5
V
R
R
R
= 250W
R
R
R
= 250W
F
F
= 10W
= 10W
ISO
ISO
= 1kW||C
L
= 1kW||C
L
L
L
1G
1M
10M
100M
1G
1M
10M
100M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 12.
Figure 13.
Frequency Response with Cap. Loading
Frequency Response with Cap. Loading
5
5
V
A
= ±6V
= +10
V
A
= ±2.5V
= +10
S
V
S
V
4
4
3
3
R
R
R
= 250W
R
R
R
= 250W
F
F
0pF
0pF
5pF
2
2
= 100W
ISO
= 1kW||C
L
= 100W
ISO
5pF
= 1kW||C
L
1
1
L
L
0
0
-1
-2
-3
-4
-5
-1
-2
-3
-4
-5
10pF
15pF
33pF
10pF
15pF
33pF
1G
1G
1M
10M
100M
1M
10M
100M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 14.
Figure 15.
8
Submit Documentation Feedback
Copyright © 2002–2013, Texas Instruments Incorporated
Product Folder Links: LMH6624
LMH6624
www.ti.com
SNOSA42F –NOVEMBER 2002–REVISED MARCH 2013
Typical Performance Characteristics (continued)
Non-Inverting Frequency Response Varying VIN
Non-Inverting Frequency Response Varying VIN
5
5
V
A
= ±2.5V
= +10
V
A
= ±6V
= +10
S
S
4
4
V
V
3
2
3
2
R
F
= 500W
R
F
= 500W
V
IN
= 20mV
V
= 20mV
IN
1
1
0
0
-1
-1
-2
-3
-4
-5
-2
-3
-4
-5
V
= 200mV
10M
IN
V
IN
= 200mV
10M
100k
1M
100M
1G
100k
1M
100M
1G
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 16.
Figure 17.
Non-Inverting Frequency Response Varying VIN (LMH6624)
Non-Inverting Frequency Response Varying VIN (LMH6626)
5
5
V
A
= ±2.5V
= +20
S
V
A
= ±2.5V
= +20
S
V
4
4
3
V
3
2
R
= 500W
F
R
= 500W
F
2
1
1
0
V
IN
= 20mV
0
V
IN
= 20mV
-1
-1
-2
-3
-4
-5
-2
-3
-4
-5
V
= 200mV
IN
V
= 200mV
10M
IN
100k
1M
10M
100M
1G
100k
1M
100M
1G
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 18.
Figure 19.
Non-Inverting Frequency Response Varying VIN (LMH6624)
Non-Inverting Frequency Response Varying VIN (LMH6626)
5
5
V
A
= ±6V
= +20
S
V
A
= ±6V
= +20
S
V
4
4
3
2
V
3
2
R
= 500W
F
R
= 500W
F
1
1
0
V = 20mV
IN
V
= 20mV
0
-1
-2
-3
-4
-5
IN
-1
-2
-3
-4
-5
V
= 200mV
IN
V
= 200mV
10M
IN
100k
1M
10M
100M
1G
100k
1M
100M
1G
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 20.
Figure 21.
Copyright © 2002–2013, Texas Instruments Incorporated
Submit Documentation Feedback
9
Product Folder Links: LMH6624
LMH6624
SNOSA42F –NOVEMBER 2002–REVISED MARCH 2013
www.ti.com
Typical Performance Characteristics (continued)
Sourcing Current
vs.
VOUT (LMH6624)
Sourcing Current
vs.
VOUT (LMH6626)
160
140
120
-40°C
-40°C
140
120
100
80
125°C
100
25°C
25°C
80
60
40
125°C
60
40
20
0
20
0
V
= ±2.5V
V
= ±2.5V
S
S
0
0.5
1
1.5
0
0.5
1
1.5
V
(V)
OUT
V
(V)
OUT
Figure 22.
Figure 23.
Sourcing Current
vs.
VOUT (LMH6624)
Sourcing Current
vs.
VOUT (LMH6626)
140
120
180
160
140
120
-40°C
-40°C
25°C
125°C
100
80
25°C
125°C
100
80
60
40
20
0
60
40
20
0
V
= ±6V
V
= ±6V
S
S
0
1
2
3
4
5
0
1
2
3
4
5
V
(V)
OUT
V
(V)
OUT
Figure 24.
Figure 25.
VOS
vs.
VOS
vs.
VSUPPLY (LMH6624)
VSUPPLY (LMH6626)
150
100
50
50
0
125°C
125°C
-50
0
25°C
25°C
-100
-150
-200
-250
-300
-50
-100
-150
-200
-250
-40°C
-40°C
4
5
6
7
8
9
10 11 12
4
5
7
8
9
10 11 12
6
V
(V)
V
(V)
SUPPLY
SUPPLY
Figure 26.
Figure 27.
10
Submit Documentation Feedback
Copyright © 2002–2013, Texas Instruments Incorporated
Product Folder Links: LMH6624
LMH6624
www.ti.com
SNOSA42F –NOVEMBER 2002–REVISED MARCH 2013
Typical Performance Characteristics (continued)
Sinking Current
vs.
VOUT (LMH6624)
Sinking Current
vs.
VOUT (LMH6626)
140
120
160
140
-40°C
-40°C
120
100
80
125°C
25°C
100
80
125°C
25°C
60
60
40
40
20
20
0
0
V
= ±2.5V
S
V
= ±2.5V
S
-20
0
0.5
1
1.5
0
0
4
0.5
1
1.5
V
(V)
V
(V)
OUT
OUT
Figure 28.
Figure 29.
Sinking Current
vs.
VOUT (LMH6624)
Sinking Current
vs.
VOUT (LMH6626)
140
120
180
160
140
120
-40°C
-40°C
100
80
125°C
125°C
25°C
100
80
60
40
20
0
25°C
60
40
20
0
V
= ±6V
S
V
= ±6V
1
S
2
3
4
5
0
1
2
3
4
5
V
(V)
V
(V)
OUT
OUT
Figure 30.
Figure 31.
IOS
vs.
Crosstalk Rejection
vs.
Frequency (LMH6626)
VSUPPLY
0.2
0
V
= 60mV
= +20
IN
PP
-20
0.15
0.1
A
R
V
= 100W
L
CH 1 OUTPUT
-40
25°C
0.05
0
-60
-80
125°C
V
= ±2.5V
S
-100
-0.05
-0.1
-0.15
CH 2 OUTPUT
-120
-140
-40°C
V
= ±6V
S
1M
100k
10M
100M
1k
10k
5
6
7
8
9
10 11 12
FREQUENCY (Hz)
V
(V)
SUPPLY
Figure 32.
Figure 33.
Copyright © 2002–2013, Texas Instruments Incorporated
Submit Documentation Feedback
11
Product Folder Links: LMH6624
LMH6624
SNOSA42F –NOVEMBER 2002–REVISED MARCH 2013
www.ti.com
Typical Performance Characteristics (continued)
Distortion
vs.
Frequency
Distortion
vs.
Frequency
0
0
A
= +20
A
= +10
V
V
R
= 100W
-20
-40
R
L
= 100W
L
-20
-40
HD2
-60
-80
V
V
= ±6V,
S
HD2
V
= ±6V, V = 2V
PP
S
O
-60
-80
= 2V
PP
O
HD3
V
V
= ±2.5V,
S
-100
-120
-140
= 1V
O
PP
-100
V
S
= ±2.5V, V = 1V
O
HD3
1M
PP
-120
100k
1M
10M
100M
100k
100M
10M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 34.
Figure 35.
Distortion
vs.
Frequency
Distortion
vs.
Gain
-50
-60
0
HD2
A
= +20
V
= ±6V
= 2V
PP
V
S
R
= 500W
V
L
-20
-40
O
HD2
V
= ±2.5V,
-70
-80
S
-60
-80
V
= 1V
PP
O
HD3
-100
-120
-140
V
V
= ±2.5V
S
-90
HD3
= ±6V, V = 2V
f
= 1MHz
C
= 1V
PP
O
R
= 100W
L
V
S
O
PP
-100
0
20
40
60
80
100
100k
1M
10M
100M
FREQUENCY (Hz)
GAIN (V/V)
Figure 36.
Figure 37.
Distortion
vs.
VOUT Peak to Peak
Distortion
vs.
VOUT Peak to Peak
0
0
-20
-40
-60
-80
A
= +20
A
= +20
V
S
V
V
= ±6V
V
= ±2.5V
S
-20
R
= 100W
HD2
R
= 100W
L
L
f
= 10MHz
C
f
= 10MHz
C
-40
-60
-80
HD2
HD3
f
= 1MHz
f
= 1MHz
C
C
-100
-100
-120
HD3
-120
0
0.5
1
1.5
V
2
2.5
(V)
3
3.5
4
0
2
4
6
8
10
12
OUT
V
(V )
OUT PP
Figure 38.
Figure 39.
12
Submit Documentation Feedback
Copyright © 2002–2013, Texas Instruments Incorporated
Product Folder Links: LMH6624
LMH6624
www.ti.com
SNOSA42F –NOVEMBER 2002–REVISED MARCH 2013
Typical Performance Characteristics (continued)
Non-Inverting Large Signal Pulse Response
Non-Inverting Large Signal Pulse Response
V
S
V
O
A
V
= ±2.5V
V
S
V
O
A
V
= ±6V
= 1V
PP
= 1V
PP
= +10
= +20
R
L
= 100W
R
L
= 100W
10 ns/DIV
10 ns/DIV
Figure 40.
Figure 41.
Non-Inverting Small Signal Pulse Response
Non-Inverting Small Signal Pulse Response
V
S
V
O
A
V
= ±2.5V
= 200mV
= +10
V
S
V
O
A
V
= ±6V
= 500mV
= +20
R
L
= 100W
R
L
= 100W
10 ns/DIV
10 ns/DIV
Figure 42.
Figure 43.
PSRR
vs.
Frequency
PSRR
vs.
Frequency
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
0
-20
-40
V
S
= ±2.5V
V
= ±6V
+PSRR, A +10
S
V
+PSRR, A +20
V
+PSRR, A = +10
V
+PSRR, A = +20
-60
-80
V
-PSRR, A +20
-PSRR, A = +10
V
V
-100
-120
-140
-PSRR, A = +20
V
-PSRR, A +10
V
1M
100M
1k
1M
100M
1k
100k
10M
1G
10k 100k
10M
1G
10k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 44.
Figure 45.
Copyright © 2002–2013, Texas Instruments Incorporated
Submit Documentation Feedback
13
Product Folder Links: LMH6624
LMH6624
SNOSA42F –NOVEMBER 2002–REVISED MARCH 2013
www.ti.com
Typical Performance Characteristics (continued)
Input Referred CMRR
vs.
Input Referred CMRR
vs.
Frequency
Frequency
0
-10
-20
0
-10
-20
V
V
= ±2.5V
V
V
= ±6V
S
S
= 5mV
PP
= 5mV
PP
IN
IN
-30
-40
-50
-30
-40
-50
A
= +10
V
A
= +10
V
-60
-60
-70
-80
-70
-80
A
V
= +20
A = +20
V
-90
-90
1M
1M
1k
10k
100k
10M
100M
1k
10k
100k
10M
100M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 46.
Figure 47.
Amplifier Peaking with Varying RF
Amplifier Peaking with Varying RF
= 2kW
5
5
R
F
R
F
= 2kW
4
R
F
= 1.5kW
4
R
= 1.5kW
F
3
2
3
2
1
R
= 1kW
F
R
F
= 1kW
R
= 750W
F
R
F
= 750W
1
0
0
-1
-2
-3
-4
-5
R
= 511W
F
-1
-2
-3
-4
-5
R
= 511W
F
V
= ±6V
V
A
= ±2.5V
= +10
S
S
V
A
= +10V
= 100W
V
R
R
= 100W
L
L
100M
1G
10M
10M
100M
1G
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 48.
Figure 49.
14
Submit Documentation Feedback
Copyright © 2002–2013, Texas Instruments Incorporated
Product Folder Links: LMH6624
LMH6624
www.ti.com
SNOSA42F –NOVEMBER 2002–REVISED MARCH 2013
APPLICATION SECTION
Figure 50. Non-Inverting Amplifier Configuration
INTRODUCTION
The LMH6624/LMH6626 are very wide gain bandwidth, ultra low noise voltage feedback operational amplifiers.
Their excellent performances enable applications such as medical diagnostic ultrasound, magnetic tape & disk
storage and fiber-optics to achieve maximum high frequency signal-to-noise ratios. The set of characteristic plots
in the "Typical Performance" section illustrates many of the performance trade offs. The following discussion will
enable the proper selection of external components to achieve optimum system performance.
BIAS CURRENT CANCELLATION
To cancel the bias current errors of the non-inverting configuration, the parallel combination of the gain setting
(Rg) and feedback (Rf) resistors should equal the equivalent source resistance (Rseq) as defined in Figure 50.
Combining this constraint with the non-inverting gain equation also seen in Figure 50, allows both Rf and Rg to
be determined explicitly from the following equations:
Rf = AVRseq and Rg = Rf/(AV-1)
(1)
When driven from a 0Ω source, such as the output of an op amp, the non-inverting input of the
LMH6624/LMH6626 should be isolated with at least a 25Ω series resistor.
As seen in Figure 51, bias current cancellation is accomplished for the inverting configuration by placing a
resistor (Rb) on the non-inverting input equal in value to the resistance seen by the inverting input (Rf||(Rg+Rs)).
Rb should to be no less than 25Ω for optimum LMH6624/LMH6626 performance. A shunt capacitor can minimize
the additional noise of Rb.
Copyright © 2002–2013, Texas Instruments Incorporated
Submit Documentation Feedback
15
Product Folder Links: LMH6624
LMH6624
SNOSA42F –NOVEMBER 2002–REVISED MARCH 2013
www.ti.com
Figure 51. Inverting Amplifier Configuration
TOTAL INPUT NOISE vs. SOURCE RESISTANCE
To determine maximum signal-to-noise ratios from the LMH6624/LMH6626, an understanding of the interaction
between the amplifier’s intrinsic noise sources and the noise arising from its external resistors is necessary.
Figure 52 describes the noise model for the non-inverting amplifier configuration showing all noise sources. In
+
−
addition to the intrinsic input voltage noise (en) and current noise (in = in = in ) source, there is also thermal
voltage noise (et = √(4KTR)) associated with each of the external resistors. Equation 1 provides the general form
for total equivalent input voltage noise density (eni). Equation 2 is a simplification of Equation 1 that assumes
Figure 52. Non-Inverting Amplifier Noise Model
(2)
Rf||Rg = Rseq for bias current cancellation. Figure 53 illustrates the equivalent noise model using this assumption.
Figure 54 is a plot of eni against equivalent source resistance (Rseq) with all of the contributing voltage noise
source of Equation 2. This plot gives the expected eni for a given (Rseq) which assumes Rf||Rg = Rseq for bias
current cancellation. The total equivalent output voltage noise (eno) is eni*AV.
Figure 53. Noise Model with Rf||Rg = Rseq
16
Submit Documentation Feedback
Copyright © 2002–2013, Texas Instruments Incorporated
Product Folder Links: LMH6624
LMH6624
www.ti.com
SNOSA42F –NOVEMBER 2002–REVISED MARCH 2013
(3)
As seen in Figure 54, eni is dominated by the intrinsic voltage noise (en) of the amplifier for equivalent source
resistances below 33.5Ω. Between 33.5Ω and 6.43kΩ, eni is dominated by the thermal noise (et = √(4kT(2Rseq))
of the external resistor. Above 6.43kΩ, eni is dominated by the amplifier’s current noise (in = √(2) inRseq). When
Rseq = 464Ω (ie., en/√(2) in) the contribution from voltage noise and current noise of LMH6624/LMH6626 is equal.
For example, configured with a gain of +20V/V giving a −3dB of 90MHz and driven from Rseq = 25Ω, the
LMH6624 produces a total equivalent input noise voltage (eni × √Hz1.57*90MHz) of 16.5μVrms
.
100
e
t
10
1
e
ni
e
n
i
n
0.1
10
100
1k
10k
100k
R
(W)
SEQ
Figure 54. Voltage Noise Density vs. Source Resistance
If bias current cancellation is not a requirement, then Rf||Rg need not equal Rseq. In this case, according to
Equation 1, Rf||Rg should be as low as possible to minimize noise. Results similar to Equation 1 are obtained for
the inverting configuration of Figure 51 if Rseq is replaced by Rb and Rg is replaced by Rg + Rs. With these
substitutions, Equation 1 will yield an eni referred to the non-inverting input. Referring eni to the inverting input is
easily accomplished by multiplying eni by the ratio of non-inverting to inverting gains.
NOISE FIGURE
Noise Figure (NF) is a measure of the noise degradation caused by an amplifier.
(4)
The Noise Figure formula is shown in Equation 4. The addition of a terminating resistor RT, reduces the external
thermal noise but increases the resulting NF. The NF is increased because RT reduces the input signal amplitude
thus reducing the input SNR.
2
2
2
2
e
+ i (R
Seq
+ (R ||R ) ) + 4KT (R
+ (R ||R ))
Seq f g
n
n
f
g
NF = 10 LOG
4KT (R
+ (R ||R ))
f g
Seq
(5)
The noise figure is related to the equivalent source resistance (Rseq) and the parallel combination of Rf and Rg.
To minimize noise figure.
•
•
Minimize Rf||Rg
Choose the Optimum RS (ROPT
)
ROPT is the point at which the NF curve reaches a minimum and is approximated by:
R
OPT ≈ en/in
(6)
17
Copyright © 2002–2013, Texas Instruments Incorporated
Submit Documentation Feedback
Product Folder Links: LMH6624
LMH6624
SNOSA42F –NOVEMBER 2002–REVISED MARCH 2013
www.ti.com
SINGLE SUPPLY OPERATION
The LMH6624/LMH6626 can be operated with single power supply as shown in Figure 55. Both the input and
output are capacitively coupled to set the DC operating point.
Figure 55. Single Supply Operation
LOW NOISE TRANSIMPEDANCE AMPLIFIER
Figure 56 implements a low-noise transimpedance amplifier commonly used with photo-diodes. The
transimpedance gain is set by Rf. Equation 4 provides the total input current noise density (ini) equation for the
basic transimpedance configuration and is plotted against feedback resistance (Rf) showing all contributing noise
sources in Figure 57. This plot indicates the expected total equivalent input current noise density (ini) for a given
feedback resistance (Rf). The total equivalent output voltage noise density (eno) is ini*Rf.
Figure 56. Transimpedance Amplifier Configuration
16
14
i
ni
12
10
8
i
t
e /R
n
F
6
4
2
i
n
0
1k
10k
100
, R (W)
F
FEEDBACK RESISTANCE
Figure 57. Current Noise Density vs. Feedback Resistance
18
Submit Documentation Feedback
Copyright © 2002–2013, Texas Instruments Incorporated
Product Folder Links: LMH6624
LMH6624
www.ti.com
SNOSA42F –NOVEMBER 2002–REVISED MARCH 2013
(7)
LOW NOISE INTEGRATOR
The LMH6624/LMH6626 implement a deBoo integrator shown in Figure 58. Positive feedback maintains
integration linearity. The LMH6624/LMH6626’s low input offset voltage and matched inputs allow bias current
cancellation and provide for very precise integration. Keeping RG and RS low helps maintain dynamic stability.
R
R
K
F
O
V
O
@ V
IN
K
= 1 +
;
O
sR C
S
G
R
B
V
O
R
S
+
-
V
IN
C
R
50W
50W
R
F
R
G
R
R
= R
B
F
= R ||R
G
S
Figure 58. Low Noise Integrator
HIGH-GAIN SALLEN-KEY ACTIVE FILTERS
The LMH6624/LMH6626 are well suited for high gain Sallen-Key type of active filters. Figure 59 shows the 2nd
order Sallen-Key low pass filter topology. Using component predistortion methods discussed in OA-21
(SNOA369) enables the proper selection of components for these high-frequency filters.
C
1
R
1
R
2
+
-
C
2
R
F
R
G
Figure 59. Sallen-Key Active Filter Topology
LOW NOISE MAGNETIC MEDIA EQUALIZER
The LMH6624/LMH6626 implement a high-performance low noise equalizer for such application as magnetic
tape channels as shown in Figure 60. The circuit combines an integrator with a bandpass filter to produce the
low noise equalization. The circuit’s simulated frequency response is illustrated in Figure 61.
Copyright © 2002–2013, Texas Instruments Incorporated
Submit Documentation Feedback
19
Product Folder Links: LMH6624
LMH6624
SNOSA42F –NOVEMBER 2002–REVISED MARCH 2013
www.ti.com
Figure 60. Low Noise Magnetic Media Equalizer
Figure 61. Equalizer Frequency Response
LAYOUT CONSIDERATION
TI suggests the copper patterns on the evaluation boards listed below as a guide for high frequency layout.
These boards are also useful as an aid in device testing and characterization. As is the case with all high-speed
amplifiers, accepted-practice RF design technique on the PCB layout is mandatory. Generally, a good high
frequency layout exhibits a separation of power supply and ground traces from the inverting input and output
pins. Parasitic capacitances between these nodes and ground may cause frequency response peaking and
possible circuit oscillations (see Application Note OA-15 (SNOA367) for more information). Use high quality chip
capacitors with values in the range of 1000pF to 0.1F for power supply bypassing. One terminal of each chip
capacitor is connected to the ground plane and the other terminal is connected to a point that is as close as
possible to each supply pin as allowed by the manufacturer’s design rules. In addition, connect a tantalum
capacitor with a value between 4.7μF and 10μF in parallel with the chip capacitor. Signal lines connecting the
feedback and gain resistors should be as short as possible to minimize inductance and microstrip line effect.
Place input and output termination resistors as close as possible to the input/output pins. Traces greater than 1
inch in length should be impedance matched to the corresponding load termination.
Symmetry between the positive and negative paths in the layout of differential circuitry should be maintained to
minimize the imbalance of amplitude and phase of the differential signal.
Component value selection is another important parameter in working with high speed/high performance
amplifiers. Choosing external resistors that are large in value compared to the value of other critical components
will affect the closed loop behavior of the stage because of the interaction of these resistors with parasitic
capacitances. These parasitic capacitors could either be inherent to the device or be a by-product of the board
layout and component placement. Moreover, a large resistor will also add more thermal noise to the signal path.
Either way, keeping the resistor values low will diminish this interaction. On the other hand, choosing very low
value resistors could load down nodes and will contribute to higher overall power dissipation and high distortion.
20
Submit Documentation Feedback
Copyright © 2002–2013, Texas Instruments Incorporated
Product Folder Links: LMH6624
LMH6624
www.ti.com
SNOSA42F –NOVEMBER 2002–REVISED MARCH 2013
Device
Package
SOT-23–5
SOIC-8
Evaluation Board Part Number
LMH6624MF
LMH6624MA
LMH6626MA
LMH6626MM
LMH730216
LMH730227
LMH730036
LMH730123
SOIC-8
VSSOP-8
Copyright © 2002–2013, Texas Instruments Incorporated
Submit Documentation Feedback
21
Product Folder Links: LMH6624
LMH6624
SNOSA42F –NOVEMBER 2002–REVISED MARCH 2013
www.ti.com
REVISION HISTORY
Changes from Revision E (March 2013) to Revision F
Page
•
Changed layout of National Data Sheet to TI format .......................................................................................................... 20
22
Submit Documentation Feedback
Copyright © 2002–2013, Texas Instruments Incorporated
Product Folder Links: LMH6624
PACKAGE OPTION ADDENDUM
www.ti.com
1-Nov-2013
PACKAGING INFORMATION
Orderable Device
LMH6624MA
Status Package Type Package Pins Package
Eco Plan
Lead/Ball Finish
MSL Peak Temp
Op Temp (°C)
-40 to 125
Device Marking
Samples
Drawing
Qty
(1)
(2)
(6)
(3)
(4/5)
NRND
SOIC
SOIC
SOIC
D
8
8
8
95
TBD
Call TI
CU SN
CU SN
Call TI
LMH66
24MA
LMH6624MA/NOPB
LMH6624MAX/NOPB
ACTIVE
ACTIVE
D
D
95
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 125
LMH66
24MA
2500
Green (RoHS
& no Sb/Br)
-40 to 125
LMH66
24MA
LMH6624MF
NRND
SOT-23
SOT-23
DBV
DBV
5
5
1000
1000
TBD
Call TI
CU SN
Call TI
-40 to 125
-40 to 125
A94A
A94A
LMH6624MF/NOPB
ACTIVE
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
LMH6624MFX
NRND
SOT-23
SOT-23
DBV
DBV
5
5
3000
3000
TBD
Call TI
CU SN
Call TI
-40 to 125
-40 to 125
A94A
A94A
LMH6624MFX/NOPB
ACTIVE
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
LMH6626MA/NOPB
LMH6626MAX/NOPB
LMH6626MM/NOPB
LMH6626MMX/NOPB
ACTIVE
ACTIVE
ACTIVE
ACTIVE
SOIC
SOIC
D
8
8
8
8
95
Green (RoHS
& no Sb/Br)
CU SN
CU SN
CU SN
CU SN
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 125
-40 to 125
-40 to 125
-40 to 125
LMH66
26MA
D
2500
1000
3500
Green (RoHS
& no Sb/Br)
LMH66
26MA
VSSOP
VSSOP
DGK
DGK
Green (RoHS
& no Sb/Br)
A98A
Green (RoHS
& no Sb/Br)
A98A
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
1-Nov-2013
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
23-Sep-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LMH6624MAX/NOPB
LMH6624MF
SOIC
D
8
5
5
5
5
8
8
8
2500
1000
1000
3000
3000
2500
1000
3500
330.0
178.0
178.0
178.0
178.0
330.0
178.0
330.0
12.4
8.4
6.5
3.2
3.2
3.2
3.2
6.5
5.3
5.3
5.4
3.2
3.2
3.2
3.2
5.4
3.4
3.4
2.0
1.4
1.4
1.4
1.4
2.0
1.4
1.4
8.0
4.0
4.0
4.0
4.0
8.0
8.0
8.0
12.0
8.0
Q1
Q3
Q3
Q3
Q3
Q1
Q1
Q1
SOT-23
SOT-23
SOT-23
SOT-23
SOIC
DBV
DBV
DBV
DBV
D
LMH6624MF/NOPB
LMH6624MFX
8.4
8.0
8.4
8.0
LMH6624MFX/NOPB
LMH6626MAX/NOPB
LMH6626MM/NOPB
LMH6626MMX/NOPB
8.4
8.0
12.4
12.4
12.4
12.0
12.0
12.0
VSSOP
VSSOP
DGK
DGK
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
23-Sep-2013
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
LMH6624MAX/NOPB
LMH6624MF
SOIC
D
8
5
5
5
5
8
8
8
2500
1000
1000
3000
3000
2500
1000
3500
367.0
210.0
210.0
210.0
210.0
367.0
210.0
367.0
367.0
185.0
185.0
185.0
185.0
367.0
185.0
367.0
35.0
35.0
35.0
35.0
35.0
35.0
35.0
35.0
SOT-23
SOT-23
SOT-23
SOT-23
SOIC
DBV
DBV
DBV
DBV
D
LMH6624MF/NOPB
LMH6624MFX
LMH6624MFX/NOPB
LMH6626MAX/NOPB
LMH6626MM/NOPB
LMH6626MMX/NOPB
VSSOP
VSSOP
DGK
DGK
Pack Materials-Page 2
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other
changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest
issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and
complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale
supplied at the time of order acknowledgment.
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily
performed.
TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and
applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide
adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or
other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information
published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or
endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the
third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service
voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice.
TI is not responsible or liable for any such statements.
Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements
concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support
that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which
anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause
harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use
of any TI components in safety-critical applications.
In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to
help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and
requirements. Nonetheless, such components are subject to these terms.
No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties
have executed a special agreement specifically governing such use.
Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in
military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components
which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and
regulatory requirements in connection with such use.
TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of
non-designated products, TI will not be responsible for any failure to meet ISO/TS16949.
Products
Applications
Audio
www.ti.com/audio
amplifier.ti.com
dataconverter.ti.com
www.dlp.com
Automotive and Transportation www.ti.com/automotive
Communications and Telecom www.ti.com/communications
Amplifiers
Data Converters
DLP® Products
DSP
Computers and Peripherals
Consumer Electronics
Energy and Lighting
Industrial
www.ti.com/computers
www.ti.com/consumer-apps
www.ti.com/energy
dsp.ti.com
Clocks and Timers
Interface
www.ti.com/clocks
interface.ti.com
logic.ti.com
www.ti.com/industrial
www.ti.com/medical
Medical
Logic
Security
www.ti.com/security
Power Mgmt
Microcontrollers
RFID
power.ti.com
Space, Avionics and Defense
Video and Imaging
www.ti.com/space-avionics-defense
www.ti.com/video
microcontroller.ti.com
www.ti-rfid.com
www.ti.com/omap
OMAP Applications Processors
Wireless Connectivity
TI E2E Community
e2e.ti.com
www.ti.com/wirelessconnectivity
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2013, Texas Instruments Incorporated
相关型号：
©2020 ICPDF网 联系我们和版权申明