LMG3411R150RWHT [TI]
具有集成驱动器和逐周期过流保护功能的 600V 150mΩ GaN | RWH | 32 | -40 to 150;型号: | LMG3411R150RWHT |
厂家: | TEXAS INSTRUMENTS |
描述: | 具有集成驱动器和逐周期过流保护功能的 600V 150mΩ GaN | RWH | 32 | -40 to 150 驱动 驱动器 |
文件: | 总30页 (文件大小:1613K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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LMG3411R150, LMG3410R150
ZHCSJF9A –MARCH 2019–REVISED JUNE 2019
具有集成驱动器和保护功能的 LMG341xR150 600V 150mΩ GaN
1 特性
2 应用
1
•
TI GaN 工艺通过了实际应用硬开关任务剖面可靠
性加速测试
•
•
高密度工业电源和消费类电源
用于笔记本电脑、平板电脑、电视机、机顶盒和打
印机的高密度交流/直流适配器
•
支持高密度电源转换设计
•
•
光伏逆变器
–
与共源共栅或独立 GaN FET 相比具有卓越的系
统性能
工业电机驱动
–
低电感 8mm x 8mm QFN 封装简化了设计和布
局
3 说明
–
–
–
可调节驱动强度确保开关性能和 EMI 控制
数字故障状态输出信号
LMG341xR150 GaN 功率级具有集成驱动器和保护功
能,可让设计人员在电力电子系统中实现更高水平的功
率密度和效率。LMG341x 的固有优势超越硅
MOSFET,包括超低输入和输出电容值、可将开关损
耗降低 80% 的零反向恢复以及可降低 EMI 的低开关节
点振铃。这些优势支持诸如图腾柱 PFC 之类的密集高
效拓扑。
仅需 +12V 非稳压电源
•
•
集成栅极驱动器
–
–
–
–
–
零共源电感
20ns 传播延迟确保 MHz 级工作频率
工艺经过调整的栅极偏置电压确保可靠性
25V/ns 至 100V/ns 的用户可调节压摆率
逐周期过流保护
LMG341xR150 通过集成一系列独特的 特性 提供了传
统共源共栅 GaN 和独立 GaN FET 的智能替代产品,
以简化设计、最大限度地提高可靠性并优化任何电源的
性能。集成式栅极驱动器支持 100V/ns 开关(Vds 振
铃几乎为零),低于 100ns 的限流可自行防止意外击
穿事件,过热关断可防止热逃逸,而且系统接口信号可
提供自监控功能。
强大的保护
–
–
–
–
–
–
无需外部保护组件
过流保护,响应时间低于 100ns
压摆率抗扰性高于 150V/ns
瞬态过压抗扰度
过热保护
器件信息(1)
针对所有电源轨的 UVLO 保护
器件型号
封装
封装尺寸(标称值)
•
器件选项:
LMG341xR150
QFN (32)
8.00mm x 8.00mm
–
–
LMG3410R150:锁存过流保护
(1) 如需了解所有可用封装,请参阅产品说明书末尾的可订购产品
附录。
LMG3411R150:逐周期过流保护
简化方框图
高于 100V/ns 时的开关性能
D
Direct-Drive
Slew Rate
600 V
GaN
S
RDRV
IN
VDD
VNEG
Current
LDO, OCP, OTP,
BB UVLO
5 V
FAULT
S
1
本文档旨在为方便起见,提供有关 TI 产品中文版本的信息,以确认产品的概要。 有关适用的官方英文版本的最新信息,请访问 www.ti.com,其内容始终优先。 TI 不保证翻译的准确
性和有效性。 在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SNOSD91
LMG3411R150, LMG3410R150
ZHCSJF9A –MARCH 2019–REVISED JUNE 2019
www.ti.com.cn
目录
9.1 Application Information............................................ 12
9.2 Typical Application ................................................. 13
9.3 Paralleling GaN Devices ......................................... 16
9.4 Do's and Don'ts ...................................................... 16
10 Power Supply Recommendations ..................... 17
10.1 Using an Isolated Power Supply........................... 17
10.2 Using a Bootstrap Diode ...................................... 17
11 Layout................................................................... 19
11.1 Layout Guidelines ................................................. 19
11.2 Layout Example .................................................... 20
12 器件和文档支持 ..................................................... 22
12.1 器件支持................................................................ 22
12.2 文档支持 ............................................................... 22
12.3 接收文档更新通知 ................................................. 22
12.4 社区资源................................................................ 22
12.5 商标....................................................................... 22
12.6 静电放电警告......................................................... 22
12.7 Glossary................................................................ 22
13 机械、封装和可订购信息....................................... 22
1
2
3
4
5
6
特性.......................................................................... 1
应用.......................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 2
Pin Configuration and Functions......................... 3
Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 5
6.5 Electrical Characteristics........................................... 5
6.6 Switching Characteristics.......................................... 6
Parameter Measurement Information .................. 6
Detailed Description .............................................. 9
8.1 Overview ................................................................... 9
8.2 Functional Block Diagram ......................................... 9
8.3 Feature Description................................................. 10
8.4 Device Functional Modes........................................ 12
Application and Implementation ........................ 12
7
8
9
4 修订历史记录
注:之前版本的页码可能与当前版本有所不同。
Changes from Original (March 2019) to Revision A
Page
•
已更改 更改了“预告信息数据表”,添加了 LMG3410R150...................................................................................................... 1
2
Copyright © 2019, Texas Instruments Incorporated
LMG3411R150, LMG3410R150
www.ti.com.cn
ZHCSJF9A –MARCH 2019–REVISED JUNE 2019
5 Pin Configuration and Functions
RWH (QFN) PACKAGE
32 PINS
(Top View)
DRAIN
12
32
FAULT
IN
13
14
15
31
PAD
30 RDRV
29
28
LPM
BBSW
16
SOURCE
Pin Functions
PIN
I/O(1)
DESCRIPTION
NAME
BBSW
DRAIN
FAULT
IN
NO.
28
P
P
O
I
Internal buck-boost converter switch pin. Connect an inductor from this point to source
Power transistor drain
1-11
32
Fault output, push-pull, active low
31
CMOS-compatible non-inverting gate drive input
5-V LDO output for external digital isolator.
LDO5V
LPM
25
29
P
I
Enables low-power-mode by connecting the pin to source
Power transistor source, die-attach pad, thermal sink, signal ground reference
SOURCE
12-16, 18-24
P
Drive strength selection pin. Connect a resistor from this pin to ground to set the turn-on drive
strength to control slew rate,
RDRV
30
I
VDD
VNEG
NC
27
26
17
—
P
P
12-V power input, relative to source. Supplies 5-V rail and gate drive supply.
Negative supply output, bypass to source with 1-µF capacitor
Not connected, connect to source or leave floating.
—
P
PAD
Thermal Pad, tie to source with multiple vias.
(1) I = Input, O = Output, P = Power
Copyright © 2019, Texas Instruments Incorporated
3
LMG3411R150, LMG3410R150
ZHCSJF9A –MARCH 2019–REVISED JUNE 2019
www.ti.com.cn
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
V
V DS
VDS,tr
V DD
V IN
Drain-Source Voltage
Transient Drain-Source Voltage
Supply Voltage
600
800
20
(2)
V
–0.3
-0.3
–55
–40
V
IN, LPM Pin Voltage
Storage Temperature
Operating Temperature
5.5
V
T STG
T J
150
150
°C
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) <1% duty cycle, <1us, for 1M pulses
6.2 ESD Ratings
VALUE
UNIT
(1)
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins
±1000
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), per JEDEC specification JESD22-C101,
all pins
±250
(2)
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
480
18
UNIT
V
VDS
VDD
Drain-Source Voltage
Supply Voltage
9.5
12
V
DC Drain-Source Current (Tj=125℃)
IDS
6
A
VIN
IN, LPM Pin Voltage
5
5
V
I+5V
LDO External Load Current
mA
kΩ
µH
µF
°C
RDRV
LDCDC
CDCDC
TJ
Slew rate control resistor
15
150
DC-DC buck-boost converter output inductor
DC-DC buck/boost converter output capacitor
Operating Temperature
10
1
-40
125
4
Copyright © 2019, Texas Instruments Incorporated
LMG3411R150, LMG3410R150
www.ti.com.cn
ZHCSJF9A –MARCH 2019–REVISED JUNE 2019
6.4 Thermal Information
LMG3410R150
(1)
THERMAL METRIC
RWH (QFN)
UNIT
32 PINS
R θJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-case (bottom) thermal resistance
57
5.3
1
°C/W
°C/W
°C/W
R θJC(top)
R θJC(bot)
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.5 Electrical Characteristics
over operating free-air temperature range, 9.5 V < VDD < 18 V, LPM = 5 V, VNEG = -14 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
GaN POWER
TRANSISTOR
TJ = 25°C
150
235
5
RDS,ON
On-state Resistance
mΩ
TJ = 125°C
IN = 0 V, ISD = 0.1 A
IN = 0 V, ISD = 3 A
Third-quadrant mode source-drain
voltage
VSD
V
TBD
30
Coss
GaN output capacitance
IN = 0 V, VDS = 400 V, fSW = 250 kHz
pF
pF
Effective output capacitance, energy
related
Coss,er
IN = 0 V, VDS =0-400 V
40
60
Effective output capacitance, time
related
Coss,tr
ID = 3 A, IN = 0 V, VDS = 0-400 V
pF
Qrr
Reverse recovery charge
Drain leakage current
Drain leakage current
VR = 400 V, ISD = 3 A, dISD/dt = 1 A/ns
Vds=600V, TJ = 25°C
0
1
nC
uA
uA
IDSS
IDSS
DRIVER SUPPLY
Quiescent current, ultra-low-power
Vds=600V, TJ = 125°C
10
IVDD,LPM
VLPM = 0 V, VDD = 12 V
80
95
µA
mA
mA
mode
Transistor held off
transistor held on
0.5
0.5
IVDD,Q
Quiescent current (average)
VDD = 12 V, fSW = 500 KHz, RDRV=40
kΩ, 50% duty cycle
IVDD,op
Operating current
9
V+5V
5V LDO output voltage
Negative Supply
VDD = 12 V
4.7
5.3
V
V
VNEG
15-mA load current
-13.9
BUCK BOOST
CONVERTER
IOUT = 15 mA, VIN = 12 V, VOUT = -14
V
IDCDC,PK
Peak inductor current
250
200
350
mA
mV
ΔVNEG
DC-DC output ripple voltage, pk-pk
CNEG = 1 µF, IOUT = 15 mA
DRIVER INPUT
Input pin, LPM pin, logic high
threshold
VIH
TBD
V
VIL
Input pin, LPM pin, low threshold
Input pin, LPM pin, hysteresis
Input pull-down resistance
0.8
V
V
VHYST
RIN,L
RLPM
0.8
150
150
kΩ
kΩ
LPM pin pull-down resistance
Copyright © 2019, Texas Instruments Incorporated
5
LMG3411R150, LMG3410R150
ZHCSJF9A –MARCH 2019–REVISED JUNE 2019
www.ti.com.cn
Electrical Characteristics (continued)
over operating free-air temperature range, 9.5 V < VDD < 18 V, LPM = 5 V, VNEG = -14 V (unless otherwise noted)
PARAMETER
UNDERVOLTAGE LOCKOUT
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VDD,(ON)
VDD,(OFF)
ΔVDD,UVLO
FAULT
Itrip
VDD turnon threshold
VDD turnoff threshold
UVLO Hysteresis
Turn-on voltage
9.1
8.5
V
V
Turn-off voltage
trip point
550
mV
Current Fault Trip Point
Temperature Trip Point
Temperature Trip Hysteresis
20
30
165
20
40
A
Ttrip
°C
°C
TtripHys
6.6 Switching Characteristics
over operating free-air temperature range, 9.5 V < VDD < 18 V, VNEG = -14 V, VBUS = 400 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
GaN FET
RDRV = 15 kΩ, IL = 3 A
100
50
dv/dt
Turn-on Drain Slew Rate
RDRV = 55 kΩ, IL = 3 A
V/ns
RDRV = 150 kΩ, IL = 3 A
turn on, IL = 3 A, RDRV = 15 kΩ
25
Δdv/dt
dv/dt
Slew Rate Variation
Edge Rate Immunity
25
%
Drain dv/dt, device remains off
inductor-fed, max di/dt = 10 A/ns
150
600
V/ns
STARTUP
tSTART
Time until gate responds to IN CNEG
= 1 µF, CLDO = 0 µF
Startup Time, VIN rising above UVLO
Propagation delay, turn on
µs
ns
DRIVER
tpd,on
IN rising to IDS > 1 A, VDS = 100 V
RDRV = 15 kΩ, VNEG = -14 V
14.4
tdelay,on
tVDS,ft
tpd,off
Turn on delay time
VDS fall time
IDS > 1 A to VDS < 320 V, RDRV = 15kΩ
VDS = 320 V to VDS = 80 V, ID = 3 A
IN falling to VDS > 10 V; ID = 3 A
VDS = 10 V to VDS = 80 V, ID = 3 A
VDS = 80 V to VDS = 320 V, ID = 3 A
4.4
2.7
ns
ns
ns
ns
ns
Propagation delay, turn off
Turn off delay time
VDS rise time
17.4
5.5
tdelay,off
tVDS,rt
FAULT
tcurr
11.7
Current Fault Delay
Current Fault Blanking Time
Fault reset time
IDS > ITH to FAULT low
50
55
ns
ns
µs
VIN>VIH to end of blanking,
RDRV=15kΩ
tblank
treset
IN held low
250
350
500
7 Parameter Measurement Information
Switching Parameters
The circuit used to measure most switching parameters is shown in 图 1. The top LMG341xR150 in this circuit is
used to re-circulate the inductor current and functions in third-quadrant mode only. The bottom device is the
active device; it is turned on to increase the inductor current to the desired test current. The bottom device is
then turned off and on to create switching waveforms at a specific inductor current. Both the drain current (at the
source) and the drain-source voltage is measured. The specific timing measurement is shown in 图 2. It is
recommended to use the half-bridge as double pulse tester. Excessive 3rd quadrant operation may over heat the
top LMG341xR150.
6
版权 © 2019, Texas Instruments Incorporated
LMG3411R150, LMG3410R150
www.ti.com.cn
ZHCSJF9A –MARCH 2019–REVISED JUNE 2019
Parameter Measurement Information (接下页)
D
Slew
Rate
Direct-Drive
S
600 V
GaN
RDRV
IN
500 uH
VDD
VNEG
LDO, OCP, OTP, Current
BB UVLO
5 V
FAULT
S
VBUS
480 V
DC
CPCB
D
Slew
Rate
Direct-Drive
S
600 V
GaN
RDRV
IN
+
VDD
VDS
_
VNEG
LDO, OCP, OTP, Current
BB UVLO
5 V
FAULT
PWM input
S
图 1. Circuit Used to Determine Switching Parameters
版权 © 2019, Texas Instruments Incorporated
7
LMG3411R150, LMG3410R150
ZHCSJF9A –MARCH 2019–REVISED JUNE 2019
www.ti.com.cn
Parameter Measurement Information (接下页)
IN
50%
50%
tpd,off
tpd,on
ID
1A
tdelay,on
tdelay,off
tVDS,ft
tVDS,rt
80%
80%
VDS
20%
20%
图 2. Measurement to Determine Propagation Delays and Slew Rates
Turn-on Delays
The timing of the turn-on transition has three components: propagation delay, turn-on delay and fall time. The
first component is the propagation delay of the driver from when the input goes high to when the GaN FET starts
turning on (represented by 1 A drain current). The turn-on delay is the delay from when the FET starts turning on
to when the drain voltage swings down by 20 percent. Finally, the VDS fall time is the time it takes the drain
voltage to slew between 80 percent and 20 percent of the bus voltage. The drive-strength resistor value has a
large effect on turn-on delay and VDS fall time but does not affect the propagation delay significantly.
Turn-off Delays
The timing of the turn-off transition has three components: propagation delay, turn-off delay and rise time. The
first component is the propagation delay of the driver from when the input goes low to when the GaN FET starts
turning off. The turn-off delay is the delay from when the FET starts turning of (represented by the drain rising
above 10 V) to when the drain voltage swings up by 20 percent. Finally, the VDS rise time is the time it takes the
drain voltage to slew between 20 percent and 80 percent of the bus voltage. The turn-off delays of the
LMG341xR150 are independent of the drive-strength resistor but the turn-off delay and the VDS rise time are
heavily dependent on the load current.
Drain Slew Rate
The slew rate, measured in volts per nanosecond, is measured on the turn-on edge of the LMG341xR150. The
slew rate is considered over the VDS fall time, where the drain falls from 80 percent to 20 percent of the bus
voltage. The drain slew rate is thus given by 60 percent of the bus voltage divided by the VDS fall time. This drain
slew rate is dependent on the RDRV value and is only slightly affected by drain current.
8
版权 © 2019, Texas Instruments Incorporated
LMG3411R150, LMG3410R150
www.ti.com.cn
ZHCSJF9A –MARCH 2019–REVISED JUNE 2019
8 Detailed Description
8.1 Overview
LMG341xR150 is a high-performance 600-V GaN transistor with integrated gate driver. The GaN transistor
provides ultra-low input and output capacitance and zero reverse recovery. The lack of reverse recovery enables
efficient operation in half-bridge and bridge-based topologies.
TI utilizes a Direct Drive architecture to control the GaN FET within the LMG341xR150. When the driver is
powered up, the GaN FET is controlled directly with the integrated gate driver. This architecture provides
superior switching performance compared with the traditional cascode approach.
The integrated driver solves a number of challenges using GaN devices. The LMG341xR150 contains a driver
specifically tuned to the GaN device for fast driving without ringing on the gate. The driver ensures the device
stays off for high drain slew rates up to 150 V/ns. In addition, the integrated driver protects against faults by
providing over-current and over-temperature protection. This feature can protect the system in case of a device
failure, or prevent a device failure in the case of a controller error or malfunction.
Unlike silicon MOSFETs, there is no p-n junction from source to drain in GaN devices. That is why GaN devices
have no reverse recovery losses. However, the GaN device can still conduct from source to drain in 3rd quadrant
of operation similar to a body diode but with higher voltage drop and higher conduction loss. 3rd quadrant
operation can be defined as follows; when the GaN device is turned off and negative current pulls the drain node
voltage to be lower than its source. The voltage drop across GaN device during 3rd quadrant operation is high;
therefore, it is recommended to operate with synchronous switching and keep the duration of 3rd quadrant
operation at minimum.
8.2 Functional Block Diagram
DRAIN
VDD
GaN
LDO
UVLO
(+5 V, VDD, VNEG)
LDO5V
FAULT
IN
OCP
OTP
Level Shift
BBSW
LPM
Buck-Boost
Controller
VNEG
RDRV
SOURCE
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LMG3411R150, LMG3410R150
ZHCSJF9A –MARCH 2019–REVISED JUNE 2019
www.ti.com.cn
8.3 Feature Description
The LMG341xR150 includes numerous features to provide increased switching performance and efficiency in
customers' applications while providing an easy-to-use solution.
8.3.1 Direct-Drive GaN Architecture
The LMG341xR150 utilizes a series FET to ensure the GaN module stays off when VDD is not applied. When this
FET is off, the gate of the GaN transistor is held within a volt of the FET's source. As the silicon FET blocks the
drain voltage, the VGS of the GaN transistor decreases until it passes its threshold voltage. Then, the GaN
transistor turns off and blocks the remaining drain voltage.
When the LMG341xR150 is powered up, the internal buck-boost converter generates a negative voltage (VNEG
)
that is sufficient to directly turn off the GaN transistor. In this case, the silicon FET is held on and the GaN
transistor is gated directly with the negative voltage. During operation, this removes the switching loss of silicon
FET.
8.3.2 Internal Buck-Boost DC-DC Converter
An internal inverting buck-boost converter generates a regulated negative rail for the turn-off supply of the GaN
device. The buck-boost converter is controlled by a peak current mode, hysteretic controller. In normal operation,
the converter remains in discontinuous-conduction mode, but may enter continuous-conduction mode during
startup and overload conditions. The converter is controlled internally and requires only a single surface-mount
inductor and output bypass capacitor. For recommendations on the required passives, see Buck-Boost Converter
Design.
8.3.3 Internal Auxiliary LDO
An internal low-dropout regulator is provided to supply external loads, such as digital isolators for the high-side
drive signal. It is capable of delivering up to 5 mA to an external load. A bypass capacitor with 0.1 µF typical is
recommended. If the digital isolator or the LDO output is not used, LMG341xR150 can start up faster with no
bypass LDO capacitor.
8.3.4 Fault Detection
The GaN driver includes built-in over-current protection (OCP), over-temperature protection (OTP) and under
voltage lockout (UVLO).
8.3.4.1 Over-current Protection
The OCP circuit monitors the LMG341xR150's drain current and compares that current signal with an internally-
set limit. Upon detection of the over-current, the family of GaN FETs has two optional protection actions: 1)
latched overcurrent protection; and 2) cycle-by-cycle overcurrent protection.
LMG3410R150 provides 1) latched OCP option, by which the FET is shut off and held off until the fault is reset
by either holding the IN pin low for more than 350 microseconds or removing power from VDD.
LMG3411R150 provides 2) cycle-by-cycle OCP option. In this mode, the GaN FET is shut off and held off when
overcurrent happens but the output fault signal will clear after the input PWM goes low. In the next cycle, the
FET can turn on as normal. The cycle-by-cycle function can be used in cases where steady state operation is
below the OCP level but transient response can still reach high current, while the circuit operation cannot be
paused. It also prevents the power stage from overheating by having overcurrent induced conduction loss.
During cycle-by-cycle operation, after the current reaches the upper limit but the PWM input is still high, the load
current can flow through the third quadrant of the other FET of a half-bridge with no synchronous rectification.
The extra high negative voltage drop (–6V to –8V) from drain to source could lead to high third quadrant loss,
similar to dead time loss but with much longer time. An operation scheme of cycle-by-cycle current limitation is
shown as 图 3.Therefore, it is critical to design the control scheme to make sure the number of switching cycles
in cycle-by-cycle mode is limited, or to change PWM input based on the fault signal to shorten the time in third
quadrant conduction mode of the power stage.
OCP circuit has a 20ns typical blanking at slew rate of 100V/ns to prevent false triggering during switch node
transitions. The blanking time increases with respect to lower slew rates accordingly. This fast response OCP
circuit protects the GaN device even under a hard short-circuit condition.
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Feature Description (接下页)
Current limit
Inductor
current
VSW
Input PWM
FAULT
图 3. Cycle-by-cycle OCP Operation
8.3.4.2 Over-Temperature Protection and UVLO
The over-temperature protection circuit measures the temperature of the driver die and trips if the temperature
exceeds the over-temperature threshold (typically 165 °C). Upon an over-temperature condition, the GaN device
is held off until temperature falls below the hysteresis limit, typically 15 degrees below the turn-off threshold.
The FAULT output is a push-pull output indicating the readiness and fault status of the driver. It is held low when
starting up until the safety FET is turned on. In an OCP or OTP fault condition, it is held low until the fault latches
are reset or fault is cleared. If the power supplies go below the UVLO thresholds, power transistor switching is
disabled and FAULT is held low until the power supplies recover.
8.3.5 Drive Strength Adjustment
To allow for an adjustable slew rate to control stability and ringing in the circuit, as well as an adjustment to pass
electro-magnetic compliance (EMC) standards, LMG341xR150 allows the user to adjust its drive strength. A
resistor is connected the RDRV pin and ground. The value of the resistor determines the slew rate of the device
during turn-on between 30V/ns and 100V/ns; The turn-off slew rate is dependent on the load current; therefore, it
is not controlled.
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8.4 Device Functional Modes
8.4.1 Low-Power Mode
In some applications, it is important to reduce quiescent current during low power mode such as start up or burst.
The LPM pins reduces the quiescent current to support low power modes. When LPM is pulled low, the supply
current in the low-power mode is typically 80µA. Once this pin is pulled high, the buck-boost converter will start
up and LMG341xR150 will be ready to operate within 1 ms.
9 Application and Implementation
注
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The LMG341xR150 is a single-channel GaN power stage targeting high-voltage applications. It targets hard-
switched and soft-switched applications running from a 350V to 480V bus such as power-factor correction (PFC)
applications. As GaN devices such as the LMG341xR150 have zero reverse-recovery charge, they are well-
suited for hard-switched half-bridge applications, such as the totem-pole bridgeless PFC circuit. It is also well-
suited for resonant DC-DC converters, such as the LLC and phase-shifted full-bridge. As both of these
converters utilize the half-bridge building block, this section will describe how to use the LMG341xR150 in a half-
bridge configuration.
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9.2 Typical Application
12V
5V
D1
600V
C1
1uF
ISO_12V_H
Q1
VDD
HVBUS
ISO_RET_H
R1
0
U1
27
25
1
5V_H
C2
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
R2
1
3
4
5
7
6
16
14
13
12
10
11
2
5V_H
VCC1
VCC2
OUTA
OUTB
INC
AGND
C3
22pF
3
20
LDO5V
R3
R4
49.9
0.1uF
4
Top_FET
C4
INA
C5
5
4.7uF
49.9
6
ISONC2
ISO_RET_H
IN_H
0.1uF
INB
C6
68pF
7
8
FAULT_H
OUTC
EN1
NC
9
10
11
ISONC1
ISONC3
EN2
31
32
29
30
28
26
IN
C7
68pF
NC
AGND
12
13
14
15
16
18
19
20
21
22
23
24
5V_H
FAULT
LPM
SOURCE
SOURCE
SOURCE
SOURCE
SOURCE
SOURCE
SOURCE
SOURCE
SOURCE
SOURCE
SOURCE
SOURCE
R5
0
2
8
9
GND1
GND1
GND2
GND2
15
ISO_RET_H
ISO7731DBQR
RDRV
BBSW
VNEG
L1
AGND
SW_H
VM12V_H
10µH
15k 100V/ns
40.2k 60V/ns
R6
15k
C8
0.022µF
C9
0.022µF
C10 C11
0.022µF 0.022µF
C12
C13
C14
1uF
0.047uF
0.047uF
17
33
NC
PAD
ISO_RET_H
LMG3411R150RWHT
ISO_RET_H
12V
Q2
27
25
1
VDD
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
C15
4.7uF
2
5V_L
3
LDO5V
4
C16
5
6
0.1uF
7
ISO_RET_L
8
9
10
11
R9
31
32
29
30
28
26
Bot_FET
IN_L
IN
49.9
12
13
14
15
16
18
19
20
21
22
23
24
FAULT_L
FAULT
LPM
SOURCE
SOURCE
SOURCE
SOURCE
SOURCE
SOURCE
SOURCE
SOURCE
SOURCE
SOURCE
SOURCE
SOURCE
5V_L
R7
0
15k 100v/ns
40.2k 60V/ns 15k
R8
RDRV
BBSW
VNEG
L2
SW_L
C17
68pF
C18
22pF
10µH
VM12V_L
C19
1uF
17
33
ISO_RET_L
ISO_RET_L
NC
PAD
LMG3411R150RWHT
ISO_RET_L
AGND
图 4. Typical Half-Bridge Application
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9.2.1 Design Requirements
This design example is for a hard-switched boost converter which is representative of PFC applications. The
system parameters considered are as follows.
表 1. Design Parameters
DESIGN PARAMETER
Input Voltage
EXAMPLE VALUE
200 VDC
400 VDC
5 A
Output Voltage
Input (Inductor) Current
Switching Frequency
100 kHz
9.2.2 Detailed Design Procedure
In high-voltage power converters, correct circuit design and PCB layout is essential to obtaining a high-
performance and even functional power converter. While the general procedure for designing a power converter
is out of the scope of this document, this datasheet describes how to utilize the LMG341xR150 to build efficient,
well-behaved power converters.
9.2.2.1 Slew Rate Selection
The LMG341xR150 supports slew rate adjustment through connecting a resistor from RDRV to source. The
choice of RDRV will control the slew rate of the drain voltage of the device between approximately 25 V/ns and
100 V/ns. The slew rate adjustment is used to control the following aspects of the power stage:
•
•
•
•
Switching loss in a hard-switched converter
Radiated and conducted EMI generated by the switching stage
Interference elsewhere in the circuit coupled from the switch node
Voltage overshoot and ringing on the switch node due to power loop inductance and other parasitics
When increasing the slew rate, the switching power loss will decrease, as the portion of the switching period
where the switch simultaneous conducts high current while blocking high voltage is decreased. However, by
increasing the slew rate of the device, the other three aspects of the power stage get worse. Following the
design recommendations in this datasheet will help mitigate the system-related challenges related to high slew
rate. Ultimately, it is up to the power designer to ensure the chosen slew rate provides the best performance in
his or her end application.
9.2.2.1.1 Startup and Slew Rate with Bootstrap High-Side Supply
Using a bootstrap supply for the high-side LMG341xR150 places additional constraints on the startup of the
circuit. Before the high-side LMG341xR150 functions correctly, its VDD, LDO5V and VNEG power supplies must
start up and be functional. Prior to the device powering up, the GaN device operates in cascode mode with
reduced performance. In particular, under high drain slew rate (dv/dt), the transistor can conduct to a small extent
and cause additional power dissipation. The correct startup procedure for a bootstrap-supplied half-bridge
depends on the circuit used.
In a buck converter without pre-bias, where the initial output voltage is zero, the startup procedure is
straightforward. In this case, before switching begins, turn on the low-side device to allow the high-side bootstrap
transistor to charge up. When the FAULT signal goes high, the high-side device has powered up completely, and
normal switching can begin.
In a boost converter or a buck converter with a pre-biased output, it is necessary to operate the circuit in
switching PWM mode while the high-side LMG341xR150 is powering up. With a boost converter, if the low-side
device is held on, the power inductor current will likely run away and the inductor will saturate. To start up a
boost converter, the duty cycle has to be very low and gradually increase to charge the output to the desired
value without the inductor current reaching saturation. This pulse sequence can be performed open-loop or using
a current-mode controller. This startup mode is standard for boost-type converters.
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However, with the LMG341xR150, during the boost converter startup, significant shoot-through current can occur
for high drain slew rates while starting up. This shoot-through current is approximately 1.25 µC per switching
event at 50 V/ns, and is comparable to a reverse-recovery event. If this shoot-through current is undesirable, the
drain slew rate of the low-side device must be reduced during startup. In 图 4, the FAULT output from the high-
side device is used to gate MOSFET Q1. When FAULT from the high-side is high, once the device is powered
up, Q1 turns on and reduces the effective resistance connected to RDRV on the low-side LMG341xR150. With
this circuit, the dv/dt of the low-side device can be held low to reduce power dissipation and reduce ringing
during high-side startup, but then increase to reduce switching loss during normal operation.
9.2.2.2 Signal Level-Shifting
As the LMG341xR150 is a single-channel power stage, two devices are used to construct a half-bridge
converter, such as the one shown in 图 4. A high-voltage level shifter or digital isolator must be used to provide
signals to the high-side device. Using an isolator for the low-side device is optional but will equalize propagation
delays between the high-side and low-side signal path, as well as providing the ability to use different grounds for
the power stage and the controller. If an isolator is not used on the low-side device, the control ground and the
power ground must be connected at the LMG341xR150, as described in Layout Guidelines, and nowhere else on
the board. With the high current slew rate of the fast-switching GaN device, any ground-plane inductance
common with the power path may cause oscillation or instability in the power stage without the use of an isolator.
Choosing a digital isolator for level-shifting is an important consideration for fault-free operation. Because GaN
switches very quickly, exceeding 50 V/ns in hard-switching applications, isolators with high common-mode
transient immunity (CMTI) are required. If an isolator suffers from a CMTI issue, it can output a false pulse or
signal which can cause shoot-through. In addition, choosing an isolator that is not edge-triggered can improve
circuit robustness. In an edge-triggered isolator, a high dv/dt event can cause the isolator to flip states and cause
circuit malfunctioning.
On/off keyed isolators are preferred, such as the TI ISO78xxF series, as a high CMTI event would only cause a
short (few nanosecond) false pulse, which can be filtered out. To allow for filtering of these false pulses, an R-C
filter at the driver input is recommended to ensure these false pulses can be filtered. If issues are observed,
values of 1 kΩ and 22 pF can be used to filter out any false pulses.
9.2.2.3 Buck-Boost Converter Design
The Buck-boost converter generates the negative voltage necessary to turn off the direct-drive GaN FET. While it
is controlled internally, it requires an external power inductor and output capacitor. The converter is designed to
use a 10 µH inductor and a 1 µF output capacitor. As the peak current of the buck-boost is limited to less than
350 mA, the inductor chosen must have a saturation current above 350 mA. A TDK Corporation
VLS201610HBX-100M-1 10 µH SMT inductor in a 0806 package is recommended. This inductor is connected
between the BBSW pin and ground. A 1 µF, 25V 0603 bypass capacitor is required between VNEG and ground.
Due to the voltage coefficient of X7R capacitors, a 1 µF capacitor will provide the required minimum 0.45 µF
capacitance when operating.
9.2.3 Application Curves
VDS (50 V/div)
ID (2.5 A/div)
VDS (50 V/div)
ID (1.25 A/div)
VOUT = 400V
IL = 5 A
RDRV = 40 kW
VBUS = 400 V
IL = 5 A
RDRV = 40 kW
Time (5 ns/div)
Time (5 ns/div)
D006
D007
图 5. Turn-on Waveform in Application Example
图 6. Turn-off Waveform in Application Example
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9.3 Paralleling GaN Devices
LMG341xR150s can be paralleled directly in soft-switching applications. As for hard-switching applications, small
decoupling inductors should be utilized to parallel the two half-bridge LMG341xR150s. This type of setup
prevents current and thermal unbalances among the parallel devices due to any propagation delay and gate-
source threshold voltage mismatches, and other factors.
9.4 Do's and Don'ts
The successful use of GaN devices in general and the LMG341xR150 in particular depends on proper use of the
device. When using the LMG341xR150, DO:
•
•
•
•
Read and fully understand the datasheet, including the application notes and layout recommendations
Use a four-layer board and place the return power path on an inner layer to minimize power-loop inductance
Use small, surface-mount bypass and bus capacitors to minimize parasitic inductance
Use the proper size decoupling capacitors and locate them close to the IC as described in the Layout
Guidelines section
•
•
Use a signal isolator to supply the input signal for the low side device. If not, ensure the signal source is
connected to the signal GND plane which is tied to the power source only at the LMG341xR150 IC
Use the FAULT pin to determine power-up state and to detect over-current and over-temperature events and
safely shut off the converter.
To avoid issues in your system when using the LMG341xR150, DON'T:
•
Use a single-layer or two-layer PCB for the LMG341xR150 as the power-loop and bypass capacitor
inductances will be excessive and prevent proper operation of the IC
•
•
•
Reduce the bypass capacitor values below the recommended values
Allow the device to experience drain transients above 600 V as they may damage the device
Allow significant third-quadrant conduction when the device is OFF or unpowered, which may cause
overheating. Self-protection feature cannot protect the device in this mode of operation
•
Ignore the FAULT pin output.
16
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10 Power Supply Recommendations
The LMG341xR150 requires an unregulated 12-V supply to power its internal driver and fault protection circuitry.
The low-side supply can be supplied from the local controller supply. The high-side device's supply must come
from an isolated supply or bootstrap supply.
10.1 Using an Isolated Power Supply
Using an isolated power supply to power the high-side device has the advantage that it will work regardless of
continued power-stage switching or duty cycle. It can also power the high-side device before power-stage
switching begins, eliminating the power-loss concern of switching with an unpowered LMG341xR150 (see
Startup and Slew Rate with Bootstrap High-Side Supply for details). Finally, a properly-selected isolated supply
will contribute fewer parasitics to the switching power stage, increasing power-stage efficiency. However, the
isolated power supply solution is larger and more expensive than the bootstrap solution.
The isolated supply can be constructed from an output of a flyback or FlyBuck™ converter, or using an isolated
power module. When using an unregulated supply, ensure that the input to the LMG341xR150 does not exceed
the maximum supply voltage. If necessary, a 18 V zener to clamp the VDD voltage supplied by the isolated
power converter. Minimizing the inter-winding capacitance of the isolated power supply or transformer is
necessary to reduce switching loss in hard-switched applications.
10.2 Using a Bootstrap Diode
When used in a half-bridge configuration, a floating supply is necessary for the top-side switch. Due to the
switching performance of LMG341xR150, a transformer-isolated power supply is recommended. With caution, a
bootstrap supply can be used with the recommendations in this section.
10.2.1 Diode Selection
LMG341xR150 has no reverse-recovery charge and little output charge. Hard-switched circuits using
LMG341xR150 also exhibit high voltage slew rates. A compatible bootstrap diode must exhibit low output charge
and, if used in a hard-switching circuit, very low reverse-recovery charge.
For soft-switching applications, the MCC UFM15PL ultra-fast silicon diode can be used. The output charge of 2.7
nC is small in comparison with the switching transistors, so it will have little influence on switching performance.
In a hard-switching application, the reverse recovery charge of the silicon diode may contribute an additional loss
to the circuit.
For hard-switched applications, a silicon carbide diode can be used to avoid reverse-recovery effects. The Cree
C3D1P7060Q SiC diode has an output charge of 4.5 nC and a reverse recovery charge of about 5 nC. There will
be some losses using this diode due to the output charge, but these will not dominate the switching stage’s
losses.
10.2.2 Managing the Bootstrap Voltage
In a synchronous buck, totem-pole PFC, or other converter where the low-side switch occasionally operates in
third-quadrant mode, it is important to consider the bootstrap supply. During the dead time, the bootstrap supply
charges through a path that includes the third-quadrant voltage drop of the low-side LMG341xR150. This third-
quadrant drop can be large, which may over-charge the bootstrap supply in certain conditions. The VDD supply of
LMG341xR150 must not exceed 18 V in bootstrap operation.
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Using a Bootstrap Diode (接下页)
DRAIN
VDD
VF
SOURCE
+
œ
DRAIN
VDD
VF
SOURCE
Copyright © 2017, Texas Instruments Incorporated
图 7. Charging Path for Bootstrap Diode
The recommended bootstrap supply connection includes a bootstrap diode and a series resistor with an optional
zener as shown in 图 8. The series resistor limits the charging current at startup and when the low-side device is
operating in third-quadrant mode. This resistor must be chosen to allow sufficient current to power the
LMG341xR150 at the desired operating frequency. At 100 kHz operation, a value of approximately 5.1 ohms is
recommended. At higher frequencies, this resistor value should be reduced or the resistor omitted entirely to
ensure sufficient supply current.
DRAIN
+12 V
VDD
VF
SOURCE
Copyright © 2017, Texas Instruments Incorporated
图 8. Suggested Bootstrap Regulation Circuit
Using a series resistor with the bootstrap supply will create a charging time constant in conjunction with the
bypass capacitance on the order of a microsecond. When the dead time, or third-quadrant conduction time, is
much lower than this time constant, the bootstrap voltage will be well-controlled and the optional zener clamp in
图 8 will not be necessary. If a large deadtime is needed, a 14-V zener diode can be used in parallel with the VDD
bypass capacitor to prevent damaging the high-side LMG341xR150.
10.2.3 Reliable Bootstrap Start-up
In some applications such as boost converter, the low side LMG341xR150 may need to start switching at high
frequency while high side LMG341xR150 is not fully biased. If low side GaN device turn-on speed is adjusted to
achieve high slew rate, the high side GaN device can turn-on unintentionally as high dv/dt can charge high side
GaN device drain to source capacitance. For reliable operation, the slew rate should be slowed down to 30 V/ns
by changing the resistance of RDRV pin of the low side LMG341xR150 until high side LMG341xR150's bias is
fully settled. This can be monitored through the FAULT output of high side LMG341xR150.
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11 Layout
11.1 Layout Guidelines
The layout of the LMG341xR150 is critical to its performance and functionality. Because the half-bridge
configuration is typically used with these GaN devices, layout recommendations will be considered with this
configuration. A four-layer or higher layer count board is required to reduce the parasitic inductances of the
layout to achieve suitable performance.
11.1.1 Power Loop Inductance
The power loop, comprising the two devices in the half bridge and the high-voltage bus capacitance, undergoes
large di/dt during switching events. By minimizing the inductance of this loop, ringing and electro-magnetic
interference (EMI) can be reduced, as well as reducing voltage stress on the devices.
This loop inductance is minimized by locating the power devices as close together as possible. The bus
capacitance is positioned in line with the two devices, either below the low-side device or above the high-side
device, on the same side of the PCB. The return path (PGND in this case) is located on the second layer on the
PCB in close proximity to the top layer. By using an inner layer and not the bottom layer, the vertical dimension
of the loop is reduced, thus minimizing inductance. A large number of vias near both the device terminal and bus
capacitance carries the high-frequency switching current to the inner layer while minimizing impedance.
11.1.2 Signal Ground Connection
The LMG341xR150's SOURCE pin is also signal ground reference. The signal GND plane should be connected
to SOURCE with low impedance kelvin connection. In addition, the return path for the passives associated to the
driver (e.g. bypass capacitance) must be connected to the GND plane. In 图 9, local signal GND planes are
located on the second copper layer to act as the return for the local circuitry. The local signal GND planes are
isolated from the high-current SOURCE plane except the kelvin connection at the source pin through enough low
impedance vias.
11.1.3 Bypass Capacitors
The gate drive loop impedance must also be minimized to yield strong performance. Although the gate driver is
integrated on package, the bypass capacitance for the driver is placed externally on the PCB board. As the GaN
device is turned off to a negative voltage, the impedance of the negative source is included in the crucial turn-off
path. As the critical hold-off path passes through this external bypass capacitor attached to VNEG, this capacitor
must be located close to the LMG341xR150. In the 图 9, VNEG bypass capacitors C9 and C26 are located
immediately adjacent to the pins on the IC with a direct connection to the SOURCE pin.
The bypass capacitors for the input supply (C8 and C23) and the 5V regulator (C5 and C7) must also be located
immediately next to the IC with a close connection to the ground plane.
11.1.4 Switch-Node Capacitance
GaN devices have very low output capacitance and switch quickly with a high dv/dt, yielding very low switching
loss. To preserve this low switching loss, additional capacitance added to the output node must be minimized.
The PCB capacitance at the switch node can be minimized by following these guidelines:
•
•
•
•
•
•
Minimize overlap between the switch-node plane and other power and ground planes
Thin the GND return path under the high-side device somewhat while still maintaining a low-inductance path
Choose high-side isolator ICs and bootstrap diodes with low capacitance
Locate the power inductor as close to the power stage as possible
Power inductors should be constructed with a single-layer winding to minimize intra-winding capacitance
If a single-layer inductor is not possible, consider placing a small inductor between the primary inductor and
the power stage to effectively shield the power stage from the additional capacitance
•
If a back-side heat-sink is used, restrict the switch-node copper coverage on the bottom copper layer to the
minimum area necessary to extract the needed heat
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Layout Guidelines (接下页)
11.1.5 Signal Integrity
The control signals to the LMG341xR150 must be protected from the high dv/dt that the GaN power stage
produces. Coupling between the control signals and the drain may cause circuit instability and potential
destruction. Route the control signals (IN, FAULT and LPM) over a ground plane located on an adjacent layer.
For example, in the layout in 图 9, all the signals are routed on the top layer directly over the signal GND plane
on the first inner copper layer.
The signals for the high-side device are often particularly vulnerable. Coupling between these signals and system
ground planes could cause issues in the circuit. Keep the traces associated with the control signals away from
drain copper. For the high-side level shifter, ensure no copper from either the input or output side extends
beneath the isolator or the device's CMTI may be compromised.
11.1.6 High-Voltage Spacing
Circuits using the LMG341xR150 involve high voltage, potentially up to 600V. When laying out circuits using the
LMG341xR150, understand the creepage and clearance requirements in your application and how they apply to
the power stage. Functional (or working) isolation is required between the source and drain of each transistor,
and between the high-voltage power supply and ground. Functional isolation or perhaps stronger isolation (such
as reinforced isolation) may be required between the input circuitry to the LMG341xR150 and the power
controller. Choose signal isolators and PCB spacing (creepage and clearance) distances which meet your
isolation requirements.
If a heatsink is used to manage thermal dissipation of the LMG341xR150, ensure necessary electrical isolation
and mechanical spacing is maintained between the heatsink and the PCB.
11.1.7 Thermal Recommendations
The LMG341xR150 is a lateral transistor grown on a Si substrate. The thermal pad is connected to the Source
node. The LMG341xR150 may be used in applications with significant power dissipation, for example, hard-
switched power converters. In these converters, cooling using just the PCB may not be sufficient to keep the part
at a reasonable temperature. To improve the thermal dissipation of the part, TI recommends a heatsink is
connected to the back of the PCB to extract additional heat. Using power planes and numerous thermal vias, the
heat dissipated in the LMG341xR150(s) can be spread out in the PCB and effectively passed to the other side of
the PCB. A heat sink can be applied to bare areas on the back of the PCB using an adhesive thermal interface
material (TIM). The soldermask from the back of the board underneath the heatsink can be removed for more
effective heat removal.
Please refer to the High Voltage Half Bridge Design Guide for LMG3410x Smart GaN FET application note for
more recommendations and performance data on thermal layouts.
11.2 Layout Example
Correct layout of the LMG341xR150 and its surrounding components is essential for correct operation. The
layout shown here reflects the power stage schematic in 图 4. It may be possible to obtain acceptable
performance with alternate layout schemes, however this layout has been shown to produce good results and is
intended as a guideline.
20
版权 © 2019, Texas Instruments Incorporated
LMG3411R150, LMG3410R150
www.ti.com.cn
ZHCSJF9A –MARCH 2019–REVISED JUNE 2019
Layout Example (接下页)
图 9. Example Half-Bridge Layout
版权 © 2019, Texas Instruments Incorporated
21
LMG3411R150, LMG3410R150
ZHCSJF9A –MARCH 2019–REVISED JUNE 2019
www.ti.com.cn
12 器件和文档支持
12.1 器件支持
12.1.1 第三方产品免责声明
TI 发布的与第三方产品或服务有关的信息,不能构成与此类产品或服务或保修的适用性有关的认可,不能构成此类
产品或服务单独或与任何 TI 产品或服务一起的表示或认可。
12.2 文档支持
12.2.1 相关文档
《LMG3411 智能 GaN FET 的高压半桥设计指南》应用手册。
12.3 接收文档更新通知
要接收文档更新通知,请导航至 TI.com.cn 上的器件产品文件夹。单击右上角的通知我 进行注册,即可每周接收产
品信息更改摘要。有关更改的详细信息,请查看任何已修订文档中包含的修订历史记录。
12.4 社区资源
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.5 商标
FlyBuck, E2E are trademarks of Texas Instruments.
12.6 静电放电警告
这些装置包含有限的内置 ESD 保护。 存储或装卸时,应将导线一起截短或将装置放置于导电泡棉中,以防止 MOS 门极遭受静电损
伤。
12.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 机械、封装和可订购信息
以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。数据如有变更,恕不另行通知,且
不会对此文档进行修订。如需获取此数据表的浏览器版本,请查阅左侧的导航栏。
22
版权 © 2019, Texas Instruments Incorporated
PACKAGE OPTION ADDENDUM
www.ti.com
8-Jul-2022
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
2000
250
(1)
(2)
(3)
(4/5)
(6)
LMG3410R150RWHR
LMG3410R150RWHT
LMG3411R150RWHR
LMG3411R150RWHT
ACTIVE
VQFN
VQFN
VQFN
VQFN
RWH
32
32
32
32
RoHS-Exempt
& Green
NIPDAU
Level-3-260C-168HRS
Level-3-260C-168HRS
Level-3-260C-168HRS
Level-3-260C-168HRS
-40 to 150
-40 to 150
-40 to 150
-40 to 150
LMG3410
Samples
Samples
Samples
Samples
R150
ACTIVE
ACTIVE
ACTIVE
RWH
RoHS-Exempt
& Green
NIPDAU
NIPDAU
NIPDAU
LMG3410
R150
RWH
2000
250
RoHS-Exempt
& Green
LMG3411
R150
RWH
RoHS-Exempt
& Green
LMG3411
R150
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
8-Jul-2022
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
1-Sep-2021
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LMG3410R150RWHR
LMG3411R150RWHR
VQFN
VQFN
RWH
RWH
32
32
2000
2000
330.0
330.0
16.4
16.4
8.3
8.3
8.3
8.3
2.25
2.25
12.0
12.0
16.0
16.0
Q2
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
1-Sep-2021
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
LMG3410R150RWHR
LMG3411R150RWHR
VQFN
VQFN
RWH
RWH
32
32
2000
2000
350.0
350.0
350.0
350.0
43.0
43.0
Pack Materials-Page 2
PACKAGE OUTLINE
RWH0032A
VQFN - 1 mm max height
S
C
A
L
E
2
.
0
0
0
PLASTIC QUAD FLATPACK - NO LEAD
8.1
7.9
A
B
PIN 1 INDEX AREA
8.1
7.9
1.0
0.8
(0.2) TYP
C
SEATING PLANE
3.75 0.1
PKG
0.05
0.00
0.08 C
(2.75)
(0.65)
0.65
0.55
32X
4X 0.85
12
16
11
17
0.85
0.75
4X
2X
0.1
C A B
C
6.2 0.1
0.05
5.2
33
PKG SYMM
16X 0.65
PIN 1 ID
0.45
0.35
24X
0.1
C A B
C
27
4X
0.05
1
32
28
0.65
0.55
0.1
4X 0.65
2X 1.3
C A B
C
0.05
4X 0.75
2X 2.85
4221569/D 08/2021
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
www.ti.com
EXAMPLE BOARD LAYOUT
RWH0032A
VQFN - 1 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
(3.75)
(0.8) TYP
(1.875)
28
32
27
1
4X (0.8)
2X (1.05)
24X (0.4)
22X ( 0.2)
VIA
(7.6)
33
PKG SYMM
(6.2)
(0.595)
(1.19)
TYP
20X (0.65)
(0.4)
4X (0.85)
(0.8) TYP
17
11
(R0.05) TYP
16
12
(1.225)
4X (0.6)
PKG
PAD
2X (2.85)
4X (0.75)
(7.6)
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:12X
0.05 MIN
ALL AROUND
0.05 MAX
ALL AROUND
METAL
METAL UNDER
SOLDER MASK
SOLDER MASK
OPENING
EXPOSED METAL
SOLDER MASK
OPENING
EXPOSED METAL
NON SOLDER MASK
SOLDER MASK DEFINED
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4221569/D 08/2021
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments
literature number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If some or all are implemented, recommended via locations are shown.
www.ti.com
EXAMPLE STENCIL DESIGN
RWH0032A
VQFN - 1 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
PKG
32
5X
(1.8)
(0.314)
SEE DETAIL A
28
27
1
24X (0.4)
(0.2)
TYP
4X (1.19)
(7.6)
PKG SYMM
(R0.05) TYP
20X (0.65)
33
10X (0.99)
4X (0.85)
17
11
16
12
10X (1.6)
4X (0.6)
4X (0.75)
2X (2.85)
(0.76)
(7.6)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
EXPOSED PAD 33:
68% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
SCALE:10X
METAL
PASTE
DETAIL A
4X, SCALE: 30X
4221569/D 08/2021
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
www.ti.com
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Copyright © 2022,德州仪器 (TI) 公司
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