LM7341_15 [TI]

Rail-to-Rail Input/Output ±15V, 4.6 MHz GBW, Operational Amplifier in SOT-23 Package;
LM7341_15
型号: LM7341_15
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

Rail-to-Rail Input/Output ±15V, 4.6 MHz GBW, Operational Amplifier in SOT-23 Package

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LM7341  
www.ti.com  
SNOSAW9B MAY 2008REVISED MARCH 2013  
LM7341 Rail-to-Rail Input/Output ±15V, 4.6 MHz GBW, Operational Amplifier in SOT-23  
Package  
Check for Samples: LM7341  
1
FEATURES  
DESCRIPTION  
The LM7341 is a rail-to-rail input and output amplifier  
in a small SOT-23 package with a wide supply  
voltage and temperature range. The LM7341 has a  
2
(VS = ±15V, TA = 25°C, Typical Values.)  
Tiny 5-pin SOT-23 Package Saves Space  
Greater than Rail-to-Rail Input CMVR 15.3V to  
15.3V  
4.6 MHz gain bandwidth and  
a 1.9 volt per  
microsecond slew rate, and draws 0.75 mA of supply  
current at no load.  
Rail-to-Rail Output Swing 14.84V to 14.86V  
Supply Current 0.7 mA  
The LM7341 is tested at 40°C, 125°C and 25°C with  
modern  
automatic  
test  
equipment.  
Detailed  
Gain Bandwidth 4.6 MHz  
performance specifications at 2.7V, ±5V, and ±15V  
and over a wide temperature range make the  
LM7341 a good choice for automotive, industrial, and  
other demanding applications.  
Slew Rate 1.9 V/µs  
Wide Supply Range 2.7V to 32V  
High Power Supply Rejection Ratio 106 dB  
High Common Mode Rejection Ratio 115 dB  
Excellent Gain 106 dB  
Greater than rail-to-rail input common mode range  
with a minimum 76 dB of common mode rejection at  
±15V makes the LM7341 a good choice for both high  
and low side sensing applications.  
Temperature Range 40°C to 125°C  
Tested at 40°C, 125°C and 25°C at 2.7V, ±5V  
and ±15V  
LM7341 performance is consistent over a wide  
voltage range, making the part useful for applications  
where the supply voltage can change, such as  
automotive electrical systems and battery powered  
electronics.  
APPLICATIONS  
Automotive  
Industrial Robotics  
The LM7341 uses a small SOT23-5 package, which  
takes up little board space, and can be placed near  
signal sources to reduce noise pickup.  
Sensor Output Buffers  
Multiple Voltage Power Supplies  
Reverse Biasing of Photodiodes  
Low Current Optocouplers  
High Side Sensing  
Comparator  
Battery Chargers  
Test Point Output Buffers  
Below Ground Current Sensing  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
All trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2008–2013, Texas Instruments Incorporated  
LM7341  
SNOSAW9B MAY 2008REVISED MARCH 2013  
www.ti.com  
Typical Performance Characteristics  
140  
158  
135  
140  
120  
158  
R
C
= 1 MW  
V
= ±15V  
= 1 MW  
= 20 pF  
L
S
120  
135  
= 20 pF  
R
L
L
L
C
100  
80  
60  
40  
20  
0
113  
90  
68  
45  
23  
0
100  
80  
60  
40  
20  
0
113  
90  
68  
45  
23  
0
PHASE  
PHASE  
±15V  
±5V  
-40°C  
25°C  
125°C  
±1.35V  
±15V  
GAIN  
GAIN  
±5V  
125°C, 25°C, -40°C  
±1.35V  
1M  
-20  
1k  
-23  
100M  
-20  
1k  
-23  
100M  
1M  
FREQUENCY (Hz)  
100k  
10M  
10k  
100k  
10M  
10k  
FREQUENCY (Hz)  
Figure 1. Open Loop Frequency Response  
Figure 2. Open Loop Frequency Response  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
Absolute Maximum Ratings(1)(2)  
ESD Tolerance(3)  
Human Body Model  
Machine Model  
2000V  
200V  
Charge-Device Model  
1000V  
VIN Differential  
±15V  
Voltage at Input/Output Pin  
Supply Voltage (VS = V+ V)  
Input Current  
(V+) + 0.3V, (V) 0.3V  
35V  
±10 mA  
Output Current(4)  
±20 mA  
Power Supply Current  
Soldering Information  
25 mA  
Infrared or Convection (20 sec)  
235°C  
Wave Soldering Lead Temp. (10 sec.)  
260°C  
Storage Temperature Range  
Junction Temperature(5)  
65°C to 150°C  
150°C  
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for  
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test  
conditions, see the Electrical Characteristics.  
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.  
(3) Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of  
JEDEC) Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).  
(4) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in  
exceeding the maximum allowed junction temperature of 150°C.  
(5) The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is  
PD = (TJ(MAX) TA)/θJA. All numbers apply for packages soldered directly unto a PC board.  
Operating Ratings(1)  
Supply Voltage (VS = V+ V)  
Temperature Range(2)  
2.5V to 32V  
40°C to 125°C  
325°C/W  
Package Thermal Resistance (θJA  
)
5-Pin SOT-23  
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for  
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test  
conditions, see the Electrical Characteristics.  
(2) The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is  
PD = (TJ(MAX) TA)/θJA. All numbers apply for packages soldered directly unto a PC board.  
2
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LM7341  
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SNOSAW9B MAY 2008REVISED MARCH 2013  
2.7V Electrical Characteristics  
Unless otherwise specified, all limits ensured for TA = 25°C, V+ = 2.7V, V= 0V, VCM = 0.5V, VOUT = 1.35V and RL > 1 MΩ to  
1.35V. Boldface limits apply at the temperature extremes  
Symbol  
VOS  
Parameter  
Input Offset Voltage  
Conditions  
Min(1)  
Typ(2)  
Max(1)  
Units  
VCM = 0.5V and VCM = 2.2V  
4  
5  
±0.2  
+4  
+5  
mV  
TCVOS  
IB  
Input Offset Voltage Temperature Drift  
Input Bias Current  
±2  
μV/°C  
VCM = 0.5V  
180  
200  
90  
nA  
nA  
VCM = 2.2V  
30  
1
60  
70  
IOS  
Input Offset Current  
VCM = 0.5V and VCM = 2.2V  
0V VCM 1.0V  
0V VCM 2.7V  
40  
50  
CMRR  
Common Mode Rejection Ratio  
82  
80  
106  
80  
dB  
dB  
62  
60  
PSRR  
CMVR  
Power Supply Rejection Ratio  
Common Mode Voltage Range  
2.7V VS 30V  
VCM = 0.5V  
86  
84  
106  
CMRR > 60 dB  
0.3  
3.0  
65  
0.0  
V
2.7  
AVOL  
VOUT  
Open Loop Voltage Gain  
0.5V VO 2.2V  
RL = 10 kΩ to 1.35V  
12  
8
V/mV  
Output Voltage Swing  
High  
RL = 10 kΩ to 1.35V  
VID = 100 mV  
50  
95  
120  
150  
RL = 2 kΩ to 1.35V  
150  
VID = 100 mV  
200  
mV from  
either rail  
Output Voltage Swing  
Low  
RL = 10 kΩ to 1.35V  
VID = 100 mV  
55  
120  
150  
RL = 2 kΩ to 1.35V  
VID = 100 mV  
100  
12  
150  
200  
IOUT  
Output Current  
Supply Current  
Sourcing, VOUT = 0V  
VID = 200 mV  
6
4
mA  
mA  
Sinking, VOUT = 0V  
VID = 200 mV  
5
3
10  
IS  
VCM = 0.5V and VCM = 2.2V  
0.6  
0.9  
1.0  
SR  
Slew Rate  
±1V Step  
1.5  
3.6  
35  
0.28  
66  
4
V/μs  
MHz  
GBW  
en  
Gain Bandwidth  
f = 100 kHz, RL = 100 kΩ  
f = 1 kHz  
Input Referred Voltage Noise Density  
Input Referred Voltage Noise Density  
Total Harmonic Distortion + Noise  
Propagation Delay  
nV/Hz  
pA/Hz  
dB  
in  
f = 1 kHz  
THD+N  
tPD  
f = 10 kHz  
Overdrive = 50 mV(3)  
Overdrive = 1V(3)  
20% to 80%(3)  
80% to 20%(3)  
µs  
3
tr  
tf  
Rise Time  
Fall Time  
1
µs  
µs  
1
(1) All limits are specified by testing or statistical analysis.  
(2) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary  
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped  
production material.  
(3) The maximum differential voltage between the input pins is VIN Differential = ±15V.  
Copyright © 2008–2013, Texas Instruments Incorporated  
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SNOSAW9B MAY 2008REVISED MARCH 2013  
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±5V Electrical Characteristics  
Unless otherwise specified, all limits ensured for TA = 25°C, V+ = +5V, V= 5V, VCM = VOUT = 0V and RL > 1 MΩ to 0V.  
Boldface limits apply at the temperature extremes.  
Symbol  
VOS  
Parameter  
Input Offset Voltage  
Conditions  
Min(1)  
Typ(2)  
Max(1)  
Units  
VCM = 4.5V and VCM = 4.5V  
4  
5  
±0.2  
+4  
+5  
mV  
TCVOS  
IB  
Input Offset Voltage Temperature Drift  
Input Bias Current  
±2  
μV/°C  
VCM = 4.5V  
200  
250  
95  
nA  
nA  
dB  
VCM = 4.5V  
35  
1
70  
80  
IOS  
Input Offset Current  
VCM = 4.5V and VCM = 4.5V  
5V VCM 3V  
40  
50  
CMRR  
Common Mode Rejection Ratio  
84  
82  
112  
92  
5V VCM 5V  
72  
70  
PSRR  
CMVR  
Power Supply Rejection Ratio  
Common Mode Voltage Range  
2.7V VS 30V, VCM = 4.5V  
CMRR 65 dB  
86  
84  
106  
dB  
V
5.3  
5.3  
5.0  
5.0  
AVOL  
VOUT  
Open Loop Voltage Gain  
4V VO 4V  
RL = 10 kΩ to 0V  
20  
12  
110  
V/mV  
Output Voltage Swing  
High  
RL = 10 kΩ to 0V,  
VID = 100 mV  
80  
170  
90  
150  
200  
RL = 2 kΩ to 0V,  
VID = 100 mV  
300  
400  
mV from  
either rail  
Output Voltage Swing  
Low  
RL = 10 kΩ to 0V  
VID = 100 mV  
150  
200  
RL = 2 kΩ to 0V  
VID = 100 mV  
210  
11  
300  
400  
IOUT  
Output Current  
Supply Current  
Sourcing, VOUT = 5V  
6
VID = 200 mV  
4
mA  
mA  
Sinking, VOUT = 5V  
VID = 200 mV  
6
4
12  
IS  
VCM = 4.5V and VCM = 4.5V  
0.65  
1.0  
1.1  
SR  
Slew Rate  
±4V Step  
1.7  
4.0  
33  
0.26  
66  
8
V/μs  
MHz  
GBW  
en  
Gain Bandwidth  
f = 100 kHz, RL = 100 kΩ  
f = 1 kHz  
Input Referred Voltage Noise Density  
Input Referred Voltage Noise Density  
Total Harmonic Distortion + Noise  
Propagation Delay  
nV/Hz  
pA/Hz  
dB  
in  
f = 1 kHz  
THD+N  
tPD  
f = 10 kHz  
Overdrive = 50 mV(3)  
Overdrive = 1V(3)  
20% to 80%(3)  
80% to 20%(3)  
µs  
6
tr  
tf  
Rise Time  
Fall Time  
5
µs  
µs  
5
(1) All limits are specified by testing or statistical analysis.  
(2) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary  
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped  
production material.  
(3) The maximum differential voltage between the input pins is VIN Differential = ±15V.  
4
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Copyright © 2008–2013, Texas Instruments Incorporated  
Product Folder Links: LM7341  
LM7341  
www.ti.com  
SNOSAW9B MAY 2008REVISED MARCH 2013  
±15V Electrical Characteristics  
Unless otherwise specified, all limits ensured for TA = 25°C, V+ = 15V, V= 15V, VCM = VOUT = 0V and RL > 1 MΩ to 0V.  
Boldface limits apply at the temperature extremes  
Symbol  
VOS  
Parameter  
Input Offset Voltage  
Conditions  
Min(1)  
Typ(2)  
Max(1)  
Units  
VCM = 14.5V and VCM = 14.5V  
4  
5  
±0.2  
+4  
+5  
mV  
TCVOS  
IB  
Input Offset Voltage Temperature Drift  
Input Bias Current  
±2  
μV/°C  
VCM = 14.5V  
250  
300  
110  
nA  
nA  
dB  
VCM = 14.5V  
40  
1
80  
90  
IOS  
Input Offset Current  
VCM = 14.5V and VCM = 14.5V  
15V VCM 12V  
40  
50  
CMRR  
Common Mode Rejection Ratio  
84  
82  
115  
100  
106  
15V VCM 15V  
2.7V VS 30V, VCM = 14.5V  
CMRR > 80 dB  
78  
76  
PSRR  
CMVR  
Power Supply Rejection Ratio  
Common Mode Voltage Range  
86  
84  
dB  
V
15.3  
15.3  
200  
15.0  
15.0  
AVOL  
VOUT  
Open Loop Voltage Gain  
13V VO 13V  
RL = 10 kΩ to 0V  
25  
15  
V/mV  
Output Voltage Swing  
High  
RL = 10 kΩ to 0V  
VID = 100 mV  
135  
160  
10  
300  
400  
mV from  
either rail  
Output Voltage Swing  
Low  
Output Current(3)  
RL = 10 kΩ to 0V  
VID = 100 mV  
300  
400  
IOUT  
Sourcing, VOUT = 15V  
5
VID = 200 mV  
3
mA  
mA  
Sinking, VOUT = 15V  
VID = 200 mV  
8
5
13  
IS  
Supply Current  
VCM = 14.5V and VCM = 14.5V  
0.7  
1.2  
1.3  
SR  
Slew Rate  
±12V Step  
1.9  
4.6  
31  
V/μs  
MHz  
GBW  
en  
Gain Bandwidth  
f = 100 kHz, RL = 100 kΩ  
f = 1 kHz  
Input Referred Voltage Noise Density  
Input Referred Voltage Noise Density  
Total Harmonic Distortion + Noise  
Propagation Delay  
nV/Hz  
pA/Hz  
dB  
in  
f = 1 kHz  
0.27  
65  
17  
THD+N  
tPD  
f = 10 kHz  
Overdrive = 50 mV(4)  
Overdrive = 1V(4)  
20% to 80%(4)  
80% to 20%(4)  
µs  
12  
tr  
tf  
Rise Time  
Fall Time  
13  
µs  
µs  
13  
(1) All limits are specified by testing or statistical analysis.  
(2) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary  
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped  
production material.  
(3) The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is  
PD = (TJ(MAX) TA)/θJA. All numbers apply for packages soldered directly unto a PC board.  
(4) The maximum differential voltage between the input pins is VIN Differential = ±15V.  
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SNOSAW9B MAY 2008REVISED MARCH 2013  
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Connection Diagram  
5-Pin SOT-23  
Figure 3. Top View  
6
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Typical Performance Characteristics  
Output Swing vs. Sourcing Current  
Output Swing vs. Sinking Current  
10  
1
10  
V
= 2.5V  
S
V
= 2.5V  
S
1
125°C  
125°C  
85°C  
85°C  
25°C  
25°C  
0.1  
0.1  
0.1  
0.01  
-40°C  
-40°C  
0.01  
0.01  
1
10  
100  
0.01  
0.1  
1
10  
100  
100  
100  
I
(mA)  
I
(mA)  
Figure 4.  
SINK  
SOURCE  
Figure 5.  
Output Swing vs. Sinking Current  
Output Swing vs. Sourcing Current  
10  
1
10  
1
V
= ±5V  
S
V
= ±5V  
S
125°C  
85°C  
125°C  
85°C  
25°C  
25°C  
0.1  
0.1  
-40°C  
-40°C  
0.01  
0.01  
0.1  
1
I
10  
100  
0.1  
1
I
10  
(mA)  
(mA)  
SOURCE  
SOURCE  
Figure 6.  
Output Swing vs. Sourcing Current  
Figure 7.  
Output Swing vs. Sinking Current  
10  
1
10  
1
V
= ±15V  
V = ±15V  
S
S
125°C  
125°C  
85°C  
85°C  
25°C  
25°C  
0.1  
0.1  
-40°C  
-40°C  
0.01  
0.01  
0.01  
0.01  
0.1  
1
10  
100  
0.1  
1
10  
I
(mA)  
I
(mA)  
SOURCE  
SINK  
Figure 8.  
Figure 9.  
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Typical Performance Characteristics (continued)  
VOS Distribution  
VOS vs. VCM (Unit 1)  
16  
14  
12  
10  
8
0.5  
0.4  
0.3  
0.2  
V
= ±5V  
V
= ±2.5V  
125°C  
S
S
85°C  
0.1  
0
25°C  
6
-40°C  
-0.1  
4
-0.2  
-0.3  
-0.4  
2
0
-3  
-2  
-1  
1
2
3
0
-1  
0
1
2
3
4
V
(mV)  
OS  
V
(V)  
CM  
Figure 10.  
Figure 11.  
VOS vs. VCM (Unit 2)  
VOS vs. VCM (Unit 3)  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
1
V
S
= 2.5V  
-40°C  
0.9  
-40°C  
0.8  
0.7  
0.6  
125°C  
25°C  
25°C  
85°C  
85°C  
0.5  
0.4  
125°C  
V
= ±2.5V  
S
-1  
0
1
2
3
4
4
-1  
0
1
2
3
V
(V)  
CM  
V
(V)  
CM  
Figure 12.  
Figure 13.  
VOS vs. VCM (Unit 2)  
= ±5V  
VOS vs. VCM (Unit 1)  
0.5  
1
0.9  
0.8  
0.7  
0.6  
0.4  
0.4  
V
= ±5V  
S
V
S
0.4  
0.3  
0.2  
0.1  
0
-40°C  
125°C  
25°C  
85°C  
-0.1  
-0.2  
-0.3  
25°C  
(V)  
125°C  
85°C  
-40°C  
-4  
-6  
-2  
2
4
6
-6  
-4  
-2  
0
2
4
6
0
V
(V)  
V
CM  
CM  
Figure 14.  
Figure 15.  
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Typical Performance Characteristics (continued)  
VOS vs. VCM (Unit 3)  
VOS vs. VCM (Unit 1)  
0.9  
0.85  
0.8  
1
V
= ±5V  
S
V
= ±15V  
S
0.9  
-40°C  
-40°C  
25°C  
0.8  
0.7  
0.6  
0.75  
0.7  
25°C  
85°C  
0.65  
0.6  
85°C  
125°C  
125°C  
0.5  
0.4  
0.55  
0.5  
0
2
10 15 20  
-6  
-4  
-2  
2
4
6
-20  
-15 -10 -5  
0
V
CM  
(V)  
V
CM  
(V)  
Figure 16.  
Figure 17.  
VOS vs. VCM (Unit 2)  
= ±15V  
VOS vs. VCM (Unit 3)  
0.6  
0.5  
0.4  
0.9  
0.85  
0.8  
V
S
-40°C  
25°C  
0.3  
0.2  
0.75  
0.7  
85°C  
0.1  
0
125°C  
0.65  
0.6  
85°C  
125°C  
-0.1  
-0.2  
-0.3  
25°C  
0
0.55  
0.5  
-40°C  
10 15 20  
V
= ±15V  
S
-20 -15 -10 -5  
5
-20 -15 -10 -5  
0
5
10 15 20  
V
CM  
(V)  
V
(V)  
CM  
Figure 18.  
Figure 19.  
VOS vs. VS (Unit 1)  
VOS vs. VS (Unit 2)  
0.1  
0
0.9  
0.8  
-
-
V
= V +0.5V  
CM  
V
CM  
= V +0.5V  
-40°C  
125°C  
85°C  
0.7  
0.6  
0.5  
-0.1  
25°C  
25°C  
-0.2  
0.3  
85°C  
-40°C  
125°C  
0.4  
0.3  
-0.4  
0
5
10 15 20 25 30 35 40  
(V)  
0
5
10 15 20 25 30 35 40  
(V)  
V
S
V
S
Figure 20.  
Figure 21.  
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Typical Performance Characteristics (continued)  
VOS vs. VS (Unit 3)  
VOS vs. VS (Unit 1)  
0.9  
0.8  
0.7  
0.6  
-
-40°C  
V
= V +0.5V  
CM  
0.5  
0.4  
125°C  
25°C  
85°C  
0.3  
0.2  
0.1  
0
85°C  
0.6  
0.5  
25°C  
125°C  
-40°C  
+
V
CM  
= V -0.5V  
0.4  
-0.1  
0
5
10 15 20 25 30 35 40  
(V)  
0
5
10 15 20 25 30 35 40  
(V)  
V
S
V
S
Figure 22.  
Figure 23.  
VOS vs. VS (Unit 2)  
VOS vs. VS (Unit 3)  
1.0  
0.9  
0.8  
0.8  
0.7  
0.6  
+
+
V
= V -0.5V  
V
= V -0.5V  
CM  
CM  
-40°C  
-40°C  
125°C  
25°C  
125°C  
85°C  
0.7  
0.6  
25°C  
0.5  
0.4  
85°C  
0.5  
0
5
10 15 20 25 30 35 40  
(V)  
0
5
10 15 20 25 30 35 40  
(V)  
V
S
V
S
Figure 24.  
Figure 25.  
IBIAS vs. VCM  
IBIAS vs. VCM  
40  
60  
40  
20  
0
V
= 2.5V  
V = ±5V  
S
S
20  
-40°C  
25°C  
85°C  
0
-20  
-40  
-60  
125°C  
-20  
-40  
-60  
85°C  
125°C  
-80  
-80  
-100  
-120  
25°C  
-5 -4 -3 -2 -1  
-40°C  
-100  
0
1
2
3
0
1
2
3
4
5
V
(V)  
V
CM  
(V)  
CM  
Figure 26.  
Figure 27.  
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Typical Performance Characteristics (continued)  
IBIAS vs. VCM  
IBIAS vs. VS  
60  
40  
20  
0
-70  
-80  
-90  
-
V
= ±15V  
S
V
= V +0.5V  
CM  
125°C  
85°C  
-20  
-40  
-100  
-110  
-40°C  
-60  
85°C  
25°C  
125°C  
-80  
-100  
-120  
-40°C  
25°C  
-5  
-120  
-15  
-10  
0
5
10  
15  
5
10 15 20 25 30 35 40  
(V)  
0
V
CM  
(V)  
V
S
Figure 28.  
Figure 29.  
IBIAS vs. VS  
IS vs. VCM  
50  
45  
0.75  
0.7  
+
V
= 2.5V  
-40°C  
V
CM  
= V -0.5V  
S
-40°C  
40  
35  
30  
0.65  
0.6  
25°C  
85°C  
25°C  
85°C  
125°C  
0.55  
0.5  
25  
20  
125°C  
0
5
10 15 20 25 30 35 40  
(V)  
-1  
0
1
2
3
4
V
S
V
(V)  
CM  
Figure 30.  
IS vs. VCM  
Figure 31.  
IS vs. VCM  
0.75  
0.7  
0.85  
0.8  
-40°C  
-40°C  
25°C  
85°C  
0.75  
25°C  
85°C  
0.65  
0.6  
0.7  
0.65  
0.6  
125°C  
125°C  
0.55  
0.55  
0.5  
V
= ±5V  
S
V
= ±15V  
S
0.5  
-6  
-4  
-2  
0
2
4
6
-20  
-15 -10 -5  
0
5
10 15 20  
V
(V)  
V
(V)  
CM  
CM  
Figure 32.  
Figure 33.  
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Typical Performance Characteristics (continued)  
IS vs. VCM  
IS vs. VCM  
1
0.9  
0.8  
1
0.9  
0.8  
-
+
V
= V +0.5V  
V
= V -0.5V  
CM  
CM  
-40°C  
-40°C  
25°C  
25°C  
85°C  
85°C  
0.7  
0.6  
0.7  
0.6  
125°C  
125°C  
0.5  
0.5  
0
5
10 15 20 25 30 35 40  
(V)  
0
5
10 15 20 25 30 35 40  
(V)  
V
S
V
S
Figure 34.  
Figure 35.  
Positive Output Swing vs. Supply Voltage  
Positive Output Swing vs. Supply Voltage  
0.5  
0.25  
0.2  
R
= 2 kW  
R = 10 kW  
L
L
125°C  
0.4  
125°C  
85°C  
85°C  
0.3  
0.2  
0.1  
0
0.15  
0.1  
0.05  
0
25°C  
25°C  
-40°C  
-40°C  
0
10  
20  
(V)  
30  
40  
0
10  
20  
(V)  
30  
40  
V
S
V
S
Figure 36.  
Figure 37.  
Negative Output Swing vs. Supply Voltage  
0.9  
Negative Output Swing vs. Supply Voltage  
0.25  
R
= 10 kW  
L
R
= 2 kW  
L
0.8  
0.7  
125°C  
0.2  
85°C  
0.6  
0.5  
125°C  
0.15  
0.1  
0.05  
0
25°C  
85°C  
0.4  
0.3  
0.2  
0.1  
0
25°C  
-40°C  
-40°C  
0
10  
20  
(V)  
30  
40  
0
10  
20  
(V)  
30  
40  
V
V
S
S
Figure 38.  
Figure 39.  
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Typical Performance Characteristics (continued)  
Open Loop Frequency with Various Capacitive Load  
Open Loop Frequency with Various Resistive Load  
140  
158  
140  
158  
V
= ±15V  
V
= ±15V  
C = 20 pF  
L
S
S
120  
135  
120  
135  
R
= 10 MW  
L
600W  
PHASE  
100  
80  
60  
40  
20  
0
113  
90  
68  
45  
23  
0
100  
80  
60  
40  
20  
0
113  
90  
68  
45  
23  
0
PHASE  
100 pF  
20 pF  
500 pF  
100 kW, 1 MW, 10 MW  
600W  
GAIN  
GAIN  
1000 pF  
500 pF  
100 pF  
-20  
1k  
-23  
100M  
-20  
1k  
-23  
100M  
1M  
1M  
10k  
100k  
10M  
10k  
100k  
10M  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
Figure 40.  
Figure 41.  
Open Loop Frequency Response with Various  
Temperatures  
Open Loop Frequency with Various Supply Voltage  
140  
158  
140  
158  
R
C
= 1 MW  
V
= ±15V  
= 1 MW  
= 20 pF  
L
S
120  
135  
120  
135  
= 20 pF  
R
L
L
L
C
100  
80  
60  
40  
20  
0
113  
90  
68  
45  
23  
0
100  
80  
60  
40  
20  
0
113  
90  
68  
45  
23  
0
PHASE  
PHASE  
±15V  
±5V  
-40°C  
25°C  
125°C  
±1.35V  
±15V  
GAIN  
GAIN  
±5V  
125°C, 25°C, -40°C  
±1.35V  
1M  
-20  
1k  
-23  
100M  
-20  
1k  
-23  
100M  
1M  
100k  
10M  
10k  
100k  
10M  
10k  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
Figure 42.  
Figure 43.  
CMRR vs. Frequency  
+PSRR vs. Frequency  
= ±15V  
140  
120  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
S
V
= ±5V  
S
100  
80  
V
= 2.7V  
S
V
= ±5V  
S
60  
40  
20  
0
10  
100  
1k  
10k  
100k  
1M  
10  
100  
1k  
10k  
100k  
1M  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
Figure 44.  
Figure 45.  
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Typical Performance Characteristics (continued)  
-PSRR vs. Frequency  
Small Signal Step Response  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= ±15V  
S
INPUT  
V
= 2.7V  
V = ±5V  
S
S
100 pF  
360 pF  
560 pF  
750 pF  
1000 pF  
2 ms/DIV  
10  
100  
1k  
10k  
100k  
1M  
FREQUENCY (Hz)  
Figure 46.  
Figure 47.  
Large Signal Step Response  
Input Referred Noise Density vs. Frequency  
1000  
100  
10  
1
V
= 2.7V  
S
INPUT  
10,000 pF  
100  
10  
0
VOLTAGE  
20,000 pF  
30,000 pF  
40,000 pF  
CURRENT  
10  
0.1  
100k  
200 ms/DIV  
1
100  
1k  
10k  
FREQUENCY (Hz)  
Figure 48.  
Input Referred Noise Density vs. Frequency  
Figure 49.  
Input Referred Noise Density vs. Frequency  
1000  
1000  
100  
10  
1
100  
10  
1
V
= ±5V  
V
= ±15V  
S
S
100  
10  
0
100  
10  
0
VOLTAGE  
VOLTAGE  
CURRENT  
10  
CURRENT  
10  
0.1  
100k  
0.1  
100k  
1
100  
1k  
10k  
1
100  
1k  
10k  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
Figure 50.  
Figure 51.  
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Typical Performance Characteristics (continued)  
THD+N vs. Frequency  
0
A
V
= +2  
V
-10  
= 750 mVPP  
IN  
R
= 100 kW  
L
-20  
-30  
-40  
-50  
-60  
-70  
-80  
V
= ±15V  
V
= 2.7V  
10k  
S
S
V
= ±5V  
1k  
S
100k  
10  
100  
1M  
FREQUENCY (Hz)  
Figure 52.  
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APPLICATION INFORMATION  
GENERAL INFORMATION  
Low supply current and wide bandwidth, greater than rail-to-rail input range, full rail-to-rail output, good capacitive  
load driving ability, wide supply voltage and low distortion all make the LM7341 ideal for many diverse  
applications.  
The high common-mode rejection ratio and full rail-to-rail input range provides precision performance when  
operated in non-inverting applications where the common-mode error is added directly to the other system  
errors.  
CAPACITIVE LOAD DRIVING  
The LM7341 has the ability to drive large capacitive loads. For example, 1000 pF only reduces the phase margin  
to about 30 degrees.  
POWER DISSIPATION  
Although the LM7341 has internal output current limiting, shorting the output to ground when operating on a  
+30V power supply will cause the op amp to dissipate about 350 mW. This is a worst-case example. In the 5-pin  
SOT-23 package, the higher thermal resistance will cause a calculated rise of 113°C. This can raise the junction  
temperature to above the absolute maximum temperature of 150°C.  
Operating from split supplies greatly reduces the power dissipated when the output is shorted. Operating on  
±15V supplies can only cause a temperature rise of 57°C in the 5-pin SOT-23 package, assuming the short is to  
ground.  
WIDE SUPPLY RANGE  
The high power-supply rejection ratio (PSRR) and common mode rejection ratio (CMRR) provide precision  
performance when operated on battery or other unregulated supplies. This advantage is further enhanced by the  
very wide supply range (2.5V–32V) offered by the LM7341. In situations where highly variable or unregulated  
supplies are present, the excellent PSRR and wide supply range of the LM7341 benefit the system designer with  
continued precision performance, even in such adverse supply conditions.  
SPECIFIC ADVANTAGES OF 5-Pin SOT-23 (TinyPak)  
The obvious advantage of the 5-pin SOT-23, TinyPak, is that it can save board space, a critical aspect of any  
portable or miniaturized system design. The need to decrease overall system size is inherent in any handheld,  
portable, or lightweight system application.  
Furthermore, the low profile can help in height limited designs, such as consumer hand-held remote controls,  
sub-notebook computers, and PCMCIA cards.  
An additional advantage of the tiny package is that it allows better system performance due to ease of package  
placement. Because the tiny package is so small, it can fit on the board right where the op amp needs to be  
placed for optimal performance, unconstrained by the usual space limitations. This optimal placement of the tiny  
package allows for many system enhancements, not easily achieved with the constraints of a larger package.  
For example, problems such as system noise due to undesired pickup of digital signals can be easily reduced or  
mitigated. This pick-up problem is often caused by long wires in the board layout going to or from an op amp. By  
placing the tiny package closer to the signal source and allowing the LM7341 output to drive the long wire, the  
signal becomes less sensitive to such pick-up. An overall reduction of system noise results.  
Often times system designers try to save space by using dual or quad op amps in their board layouts. This  
causes a complicated board layout due to the requirement of routing several signals to and from the same place  
on the board. Using the tiny op amp eliminates this problem.  
Additional space savings parts are available in tiny packages from Texas Instruments, including low power  
amplifiers, precision voltage references, and voltage regulators.  
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LOW DISTORTION, HIGH OUTPUT DRIVE CAPABILITY  
The LM7341 offers superior low-distortion performance, with a total-harmonic-distortion-plus-noise of 66 dB at f  
= 10 kHz. The advantage offered by the LM7341 is its low distortion levels, even at high output current and low  
load resistance.  
Typical Applications  
HANDHELD REMOTE CONTROLS  
The LM7341 offers outstanding specifications for applications requiring good speed/power trade-off. In  
applications such as remote control operation, where high bandwidth and low power consumption are needed.  
The LM7341 performance can easily meet these requirements.  
OPTICAL LINE ISOLATION FOR MODEMS  
The combination of the low distortion and good load driving capabilities of the LM7341 make it an excellent  
choice for driving opto-coupler circuits to achieve line isolation for modems. This technique prevents telephone  
line noise from coupling onto the modem signal. Superior isolation is achieved by coupling the signal optically  
from the computer modem to the telephone lines; however, this also requires a low distortion at relatively high  
currents. Due to its low distortion at high output drive currents, the LM7341 fulfills this need, in this and in other  
telecom applications.  
REMOTE MICROPHONE IN PERSONAL COMPUTERS  
Remote microphones in Personal Computers often utilize a microphone at the top of the monitor which must  
drive a long cable in a high noise environment. One method often used to reduce the nose is to lower the signal  
impedance, which reduces the noise pickup. In this configuration, the amplifier usually requires 30 dB–40 dB of  
gain, at bandwidths higher than most low-power CMOS parts can achieve. The LM7341 offers the tiny package,  
higher bandwidths, and greater output drive capability than other rail-to-rail input/output parts can provide for this  
application.  
LM7341 AS A COMPARATOR  
The LM7341 can also be used as a comparator and provides quite reasonable performance. Note however that  
unlike a typical comparator an op amp has a maximum allowed differential voltage between the input pins. For  
the LM7341, as stated in the Absolute Maximum Ratings section, this maximum voltage is VIN Differential =  
±15V. Beyond this limit, even for a short time, damage to the device may occur.  
As an inverting comparator at VS = 30V and 1V of overdrive there is typically 12 μs of propagation delay. At VS =  
30V and 50 mV of overdrive there is typically 17 µs of propagation delay.  
+V  
CC  
V
-
IN  
V
OUT  
+
-V  
EE  
Figure 53. Inverting Comparator  
Similarly a non-inverting comparator at VS = 30V and 1V of overdrive there is typically 12 µs of propagation  
delay. At VS = 30V and 50 mV of overdrive there is typically 17 μs of propagation delay.  
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+V  
CC  
-
V
OUT  
+
V
IN  
-V  
EE  
Figure 54. Non-Inverting Comparator  
COMPARATOR WITH HYSTERESIS  
The basic comparator configuration may oscillate or produce a noisy output if the applied differential input  
voltage is near the comparator's offset voltage. This usually happens when the input signal is moving very slowly  
across the comparator's switching threshold. This problem can be prevented by the addition of hysteresis or  
positive feedback.  
INVERTING COMPARATOR WITH HYSTERESIS  
The inverting comparator with hysteresis requires a three resistor network that is referenced to the supply voltage  
VCC of the comparator, as shown in Figure 55. When VIN at the inverting input is less than VA, the voltage at the  
non-inverting node of the comparator (VIN < VA), the output voltage is high (for simplicity assume VOUT switches  
as high as VCC). The three network resistors can be represented as R1||R3 in series with R2. The lower input trip  
voltage VA1 is defined as  
VA1 = VCCR2 / ((R1||R3) + R2)  
(1)  
When VIN is greater than VA (VIN > VA), the output voltage is low, very close to ground. In this case the three  
network resistors can be presented as R2||R3 in series with R1. The upper trip voltage VA2 is defined as  
VA2 = VCC (R2||R3) / ((R1+ (R2||R3)  
(2)  
The total hysteresis provided by the network is defined as  
Delta VA = VA1- VA2  
(3)  
For example to achieve 50 mV of hysteresis when VCC = 30V set R1 = 4.02 k, R2 = 4.02 k, and R3 = 1.21 M.  
With these resistors selected the error due to input bias current is approximately 1 mV. To minimize this error it is  
best to use low resistor values on the inputs.  
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+V = +30V  
CC  
R
1
4.02 kW  
30V  
OUT  
V
IN  
-
V
OUT  
V
V
A2  
V
A1  
V
A
+
0
14.975  
15.025  
V
IN  
R
R
3
2
1.21 MW  
4.02 kW  
V
OUT  
HIGH  
V
LOW  
OUT  
+V  
+V  
CC  
CC  
R
1
R
1
R
3
V
A2  
V
A1  
R
R
2
3
R
2
Figure 55. Inverting Comparator with Hysteresis  
NON-INVERTING COMPARATOR WITH HYSTERESIS  
A non-inverting comparator with hysteresis requires a two resistor network, and a voltage reference (VREF) at the  
inverting input. When VIN is low, the output is also low. For the output to switch from low to high, VIN must rise up  
to VIN1 where VIN1 is calculated by  
VIN1 = R1*(VREF/R2) + VREF  
(4)  
When VIN is high, the output is also high, to make the comparator switch back to it's low state, VIN must equal  
VREF before VA will again equal VREF . VIN can be calculated by  
VIN2 = (VREF (R1+ R2) - VCCR1)/R2  
(5)  
The hysteresis of this circuit is the difference between VIN1 and VIN2  
.
Delta VIN = VCCR1/R2  
(6)  
For example to achieve 50 mV of hysteresis when VCC = 30V set R1 = 20and R2 = 12.1 k.  
+V = +30V  
CC  
V
= +15V  
-
REF  
V
OUT  
V
A
V
IN  
+
R
1
20W  
R
2
12.1 kW  
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V
HIGH  
V
OUT  
LOW  
OUT  
+V  
V
CC  
IN 1  
30V  
R
R
1
V
A
R
2
2
A
1
V
OUT  
V
IN 2  
V
IN 1  
V
R
= V  
REF  
= V  
REF  
0
14.975 15.025  
V
IN  
V
IN 2  
Figure 56. Non-Inverting Comparator with Hysteresis  
OTHER SOT-23 AMPLIFIERS  
The LM7321 is a rail-to-rail input and output amplifier that can tolerate unlimited capacitive load. It works from  
2.7V to ±15V and across the 40°C to 125°C temperature range. It has 20 MHz gain-bandwidth, and is available  
in both 5-Pin SOT-23 and 8-Pin SOIC packages.  
The LM6211 is a 20 MHz part with CMOS input, which runs on 5V to 24V single supplies. It has rail-to-rail output  
and low noise.  
The LMP7701 is a rail-to-rail input and output precision part with an input voltage offset under 220 microvolts and  
low noise. It has 2.5 MHz bandwidth and works on 2.7V to 12V supplies.  
SMALLER SC70 AMPLIFIERS  
The LMV641 is a 10 MHz amplifier which uses only 140 micro amps of supply current. The input voltage offset is  
less than 0.5 mV.  
The LMV851 is an 8 MHz amplifier which uses only 0.4 mA supply current, and is available in the smaller SC70  
package. The LMV851 also resists Electro Magnetic Interference (EMI) from mobile phones and similar high  
frequency sources. It works on 2.7V to 5.5 V supplies.  
Detailed information on these and a wide range of other parts can be found at www.ti.com.  
20  
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Copyright © 2008–2013, Texas Instruments Incorporated  
Product Folder Links: LM7341  
 
LM7341  
www.ti.com  
SNOSAW9B MAY 2008REVISED MARCH 2013  
REVISION HISTORY  
Changes from Revision A (March 2013) to Revision B  
Page  
Changed layout of National Data Sheet to TI format .......................................................................................................... 20  
Copyright © 2008–2013, Texas Instruments Incorporated  
Submit Documentation Feedback  
21  
Product Folder Links: LM7341  
PACKAGE OPTION ADDENDUM  
www.ti.com  
11-Apr-2013  
PACKAGING INFORMATION  
Orderable Device  
LM7341MF/NOPB  
LM7341MFE/NOPB  
LM7341MFX/NOPB  
Status Package Type Package Pins Package  
Eco Plan Lead/Ball Finish  
MSL Peak Temp  
Op Temp (°C)  
-40 to 125  
Top-Side Markings  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4)  
ACTIVE  
SOT-23  
SOT-23  
SOT-23  
DBV  
5
5
5
1000  
Green (RoHS  
& no Sb/Br)  
CU SN  
CU SN  
CU SN  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
AV4A  
ACTIVE  
ACTIVE  
DBV  
DBV  
250  
Green (RoHS  
& no Sb/Br)  
-40 to 125  
AV4A  
AV4A  
3000  
Green (RoHS  
& no Sb/Br)  
-40 to 125  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4)  
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a  
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
26-Mar-2013  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
LM7341MF/NOPB  
LM7341MFE/NOPB  
LM7341MFX/NOPB  
SOT-23  
SOT-23  
SOT-23  
DBV  
DBV  
DBV  
5
5
5
1000  
250  
178.0  
178.0  
178.0  
8.4  
8.4  
8.4  
3.2  
3.2  
3.2  
3.2  
3.2  
3.2  
1.4  
1.4  
1.4  
4.0  
4.0  
4.0  
8.0  
8.0  
8.0  
Q3  
Q3  
Q3  
3000  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
26-Mar-2013  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
LM7341MF/NOPB  
LM7341MFE/NOPB  
LM7341MFX/NOPB  
SOT-23  
SOT-23  
SOT-23  
DBV  
DBV  
DBV  
5
5
5
1000  
250  
210.0  
210.0  
210.0  
185.0  
185.0  
185.0  
35.0  
35.0  
35.0  
3000  
Pack Materials-Page 2  
IMPORTANT NOTICE  
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TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms  
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