LM66100DCKR [TI]
具有集成式 FET 的 1.5V 至 5.5V、1.5A、0.5µA IQ 理想二极管 | DCK | 6 | -40 to 125;
| 型号： | LM66100DCKR |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 具有集成式 FET 的 1.5V 至 5.5V、1.5A、0.5µA IQ 理想二极管 | DCK | 6 | -40 to 125 PC 光电二极管 |
| 文件： | 总22页 (文件大小：2675K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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LM66100
ZHCSJI1A –MARCH 2019–REVISED JUNE 2019
具有输入极性保护功能的 LM66100 5.5V、1.5A、79mΩ、低 IQ 理想二极
管
1 特性
该芯片通过比较 CE 引脚电压和输入电压来提供支持。
当 CE 引脚电压高于输入电压时，该器件被禁用并且
MOSFET 关闭。当 CE 引脚电压比较低时，MOSFET
开启。LM66100 还具有反极性保护 (RPP) 功能，该功
能可以保护器件不受误接线输入的影响，例如电池装
反。
1
•
•
宽工作电压范围：1.5V 至 5.5V
输入电压反向关断电压：
绝对最大电压为 –6V
•
•
最大持续电流 (IMAX)：1.5A
导通电阻 (RON)：
–
–
–
5V VIN = 79mΩ（典型值）
3.6V VIN = 91mΩ（典型值）
1.8V VIN = 141mΩ（典型值）
可在 ORing 配置中使用两个 LM66100 器件，其实施
方法与双二极管 ORing 相似。在此配置中，该器件将
最高输出电压传递到输出端，同时阻断反向电流流入输
入电源。这些器件可以比较输入和输出电压，以确保内
部电压比较器成功阻止反向电流。
•
•
•
启用比较器芯片 (CE)
通道状态指示 (ST)
低电流消耗：
LM66100 采用标准 SC-70 封装，工作结温范围为
–40°C 至 125°C。
–
–
3.6V VIN 关断电流 (ISD,VIN)：120nA（典型值）
3.6V VIN 静态电流 (IQ, VIN)：150nA（典型值）
器件信息(1)
2 应用
器件编号
LM66100
封装
SC-70 (6)
封装尺寸（标称值）
•
•
•
•
智能仪表
2.1mm x 2.0mm
楼宇自动化
(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附
录。
GPS 和跟踪
原电池和备用电池
典型应用
3 说明
LM66100 是单输入单输出 (SISO) 集成式理想二极
管，非常适用于各种 解决方案。该器件包含一个可在
1.5V 至 5.5V 输入电压范围内运行的 P 沟道
MOSFET，并且支持 1.5A 的最大持续电流。
1
本文档旨在为方便起见，提供有关 TI 产品中文版本的信息，以确认产品的概要。 有关适用的官方英文版本的最新信息，请访问 www.ti.com，其内容始终优先。 TI 不保证翻译的准确
性和有效性。 在实际设计之前，请务必参考最新版本的英文版本。
English Data Sheet: SLVSEZ8
LM66100
ZHCSJI1A –MARCH 2019–REVISED JUNE 2019
www.ti.com.cn
目录
8.3 Feature Description................................................... 9
8.4 Device Functional Modes........................................ 10
Application and Implementation ........................ 10
9.1 Application Information............................................ 10
9.2 Typical Applications ................................................ 10
1
2
3
4
5
6
特性.......................................................................... 1
应用.......................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 2
Pin Configuration and Functions......................... 3
Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 4
6.5 Electrical Characteristics........................................... 5
6.6 Switching Characteristics.......................................... 5
6.7 Typical Characteristics.............................................. 6
Parameter Measurement Information .................. 7
Detailed Description .............................................. 8
8.1 Overview ................................................................... 8
8.2 Functional Block Diagram ......................................... 8
9
10 Power Supply Recommendations ..................... 13
11 Layout................................................................... 14
11.1 Layout Guidelines ................................................. 14
11.2 Layout Example .................................................... 14
12 器件和文档支持 ..................................................... 15
12.1 接收文档更新通知 ................................................. 15
12.2 社区资源................................................................ 15
12.3 商标....................................................................... 15
12.4 静电放电警告......................................................... 15
12.5 Glossary................................................................ 15
13 机械、封装和可订购信息....................................... 15
7
8
4 修订历史记录
Changes from Original (March 2019) to Revision A
Page
•
已更改 将“高级信息”更改为“生产数据” ................................................................................................................................... 1
2
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LM66100
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ZHCSJI1A –MARCH 2019–REVISED JUNE 2019
5 Pin Configuration and Functions
DCK Package
6-Pin SC-70
Top View
Pin Functions
PIN
I/O
DESCRIPTION
NO.
1
NAME
VIN
I
Device input
2
GND
-
Device ground
Active-low chip enable. Can be connected to VOUT for reverse current protection. Do not
leave floating.
3
4
5
6
CE
I
N/C
ST
-
Not internally connected, can be tied to GND or left floating.
Active-low open-drain output, pulled low when the chip is disabled. Hi-Z when the chip is
enabled. Connect to GND if not required.
O
O
VOUT
Device output
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ZHCSJI1A –MARCH 2019–REVISED JUNE 2019
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
–6
MAX
6
UNIT
V
VIN
Maximum Input Voltage Range
Maximum Output Voltage Range
Maximum CE Pin Voltage
VOUT
VCE
–0.3
–0.3
–0.3
6
V
6
V
VST
Maximum ST Pin Voltage
6
V
ISW, MAX
ISW, PLS
ID, PLS
ICE
Maximum Continuous Switch Current
1.5
2.5
2.5
A
Maximum Pulsed Switch Current (≤120 ms, 2% Duty Cycle)
Maximum Pulsed Body Diode Current (≤0.1 ms, 0.2% Duty Cycle)
Maximum CE Pin Current
A
A
–1
–1
mA
mA
°C
°C
°C
IST
Maximum ST Pin Current
TJ
Junction temperature
–40
–65
125
150
300
TSTG
TLEAD
Storage temperature
Maximum Lead Temperature (10 s soldering time)
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per
±2000
ANSI/ESDA/JEDEC JS-001, allpins(1)
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), per JEDEC
specificationJESD22-C101, all pins(2)
±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with
less is possible with the necessary precautions. Pins listed may actually have higher performance.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
1.5
1
TYP
MAX
5.5
UNIT
VIN
Input Voltage Range
Output Voltage Range
CE Pin Voltage Range
ST Pin Voltage Range
V
V
V
V
VOUT
VCE
VST
5.5
0
5.5
0
5.5
6.4 Thermal Information
LM66100
THERMAL METRIC(1)
DCK (SC-70)
UNIT
6 PINS
192
124
52
RθJA
RθJC(top)
RθJB
ΨJT
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
Junction-to-top characterization parameter
Junction-to-board characterization parameter
34
ΨJB
52
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
4
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ZHCSJI1A –MARCH 2019–REVISED JUNE 2019
6.5 Electrical Characteristics
Typical values are at 25°C with an input voltage of 3.6V (unless otherwise noted)
PARAMETER
Input Supply (VIN)
TEST CONDITIONS
MIN TYP MAX UNIT
VOUT = VIN
VCE > VIN + 80mV
IOUT = 0 A (VOUT = open)
25°C
0.12
0.15
0.2
0.3 µA
0.3 µA
0.3 µA
0.3 µA
ISD,VIN
VIN Shutdown Current
VIN Quiescent Current
-40°C to 105°C
25°C
VOUT = VIN
VCE < VIN - 250mV
IOUT = 0 A (VOUT = open)
IQ,VIN
-40°C to 105°C
25°C
0.5 µA
2.7 µA
VOUT - VIN ≤ 5.5 V
VCE > VIN + 80mV
-40°C to 85°C
-40°C to 105°C
-40°C to 85°C
-40°C to 105°C
-40°C to 85°C
-40°C to 105°C
8
µA
OUT to IN Leakage Current
(Current out of VIN)
IOUT, OFF
1.7 µA
5.1 µA
0.7 µA
2.1 µA
VOUT - VIN ≤ 4.5 V
VCE > VIN + 80mV
VOUT - VIN ≤ 1.0 V
VCE > VIN + 80mV
ON-Resistance (RON)
25°C
79
95
RON
RON
RON
ON-State Resistance
IOUT = -200 mA
IOUT = -200 mA
IOUT = -200 mA
VIN = 5 V
-40°C to 85°C
-40°C to 125°C
25°C
110 mΩ
120
91 110
ON-State Resistance
ON-State Resistance
VIN = 3.6 V
VIN = 1.8 V
-40°C to 85°C
-40°C to 125°C
25°C
125 mΩ
140
141 180
210 mΩ
-40°C to 85°C
-40°C to 125°C
230
Comparator Chip Enable (CE)
VON
VOFF
ICE
Turn ON Threshold
VCE - VIN
-40°C to 125°C
-40°C to 125°C
-40°C to 125°C
-40°C to 125°C
–250 –150 –80 mV
Turn OFF Threshold
CE Pin Leakage Current
CE Pin Leakage Current
VCE - VIN
0
0
0
35
80 mV
VCE < VIN - 250mV
VCE > VIN + 80mV
160 300 nA
400 610 nA
ICE
Reverse Current Blocking (RCB) and Body Diode Characteristics
IRCB
Reverse Activation Current
VCE = VOUT
-40°C to 125°C
-40°C to 125°C
0.5
0.5
1
A
V
IOUT = 10 mA
VCE > VIN + 80mV
VFWD
Body Diode Forward Voltage
0.1
1.1
Status Indication (ST)
VOL, ST Output Low Voltage
tST
IST = 1 mA
-40°C to 125°C
-40°C to 125°C
-40°C to 125°C
0.1
V
Status Delay Time
VCE transitions from low to high
VCE < VIN - 250mV
1
µs
IST
ST Pin Leakage Current
–20
20 nA
6.6 Switching Characteristics
Unless otherwise noted, the typical characteristics in the following table applies over the entire recommended operating
voltage at an ambient temperature of 25°C and a load of CL = 100 nF and RL = 1kΩ
PARAMETER
TEST CONDITIONS
VIN = 1.8 V
MIN
TYP
90
40
27
2
MAX
UNIT
µs
tON
Turn ON Time
VIN = 3.6 V
VIN = 5 V
µs
µs
VIN = 1.8 V
VIN = 3.6 V
VIN = 5 V
µs
tOFF
Turn OFF Time
2
µs
2
µs
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Switching Characteristics (continued)
Unless otherwise noted, the typical characteristics in the following table applies over the entire recommended operating
voltage at an ambient temperature of 25°C and a load of CL = 100 nF and RL = 1kΩ
PARAMETER
TEST CONDITIONS
VIN = 1.8 V
MIN
TYP
20
MAX
UNIT
µs
tFALL
Output Fall Time
VIN = 3.6 V
VIN = 5 V
10
µs
7.5
µs
6.7 Typical Characteristics
200
180
160
140
120
100
80
240
-40èC
25èC
85èC
105èC
-40èC
220
25èC
85èC
105èC
200
180
160
140
120
100
80
60
40
60
20
1.5
2
2.5
3
3.5
4
4.5
5
5.5
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Input Voltage (V)
Input Voltage (V)
D001
D002
VCE > VIN
VCE < VIN
图 1. Shutdown Current vs Input Voltage
图 2. Quiescent Current vs Input Voltage
180
1200
VIN = 1.8V
VIN = 3.6V
VIN = 5V
VOUT - VIN = 1V
VOUT - VIN = 4.5V
VOUT - VIN = 5.5V
160
1000
140
120
100
80
800
600
400
200
0
60
-40
-20
0
20
40
60
80
100
120
-40
-20
0
20
40
60
80
100
120
Temperature (èC)
Temperature (èC)
D003
D004
VCE > VIN
VCE < VIN
IOUT = 200mA
图 3. Reverse Leakage Current vs Junction Temperature
图 4. On-Resistance vs Junction Temperature
65
-50
-40èC
-40èC
25èC
25èC
60
-75
85èC
105èC
85èC
105èC
55
-100
50
45
40
35
30
25
-125
-150
-175
-200
1.5
2
2.5
3
3.5
4
4.5
5
5.5
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Input Voltage (V)
Input Voltage (V)
D007
D008
图 5. Turn ON Threshold vs Input Voltage
图 6. Turn OFF Threshold vs Input Voltage
6
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ZHCSJI1A –MARCH 2019–REVISED JUNE 2019
Typical Characteristics (接下页)
0.6
0.5
0.4
0.3
0.2
0.1
0
120
100
80
60
40
20
0
VIN = 1.8V
VIN = 3.6V
VIN = 5V
-40èC
25èC
85èC
105èC
1.5
2
2.5
3
3.5
4
4.5
5
5.5
-40
-20
0
20
40
60
80
100
120
Input Voltage (V)
Junction Temperature (èC)
D005
D009
VCE > VIN
IOUT = 10mA
CL = 100nF
RL = 1kΩ
图 7. Body Diode Forward Voltage vs Input Voltage
图 8. Turn ON Time vs Junction Temperature
10
22
VIN = 1.8V
VIN = 3.6V
VIN = 5V
20
18
16
14
12
10
8
8
6
4
2
0
6
4
-40
-20
0
20
40
60
80
100
120
Junction Temperature (èC)
D011
-40
-20
0
20
40
60
80
100
120
Junction Temperature (èC)
D010
CL = 100nF
RL = 1kΩ
CL = 100nF
RL = 1kΩ
VIN = 1.8V to 5V
图 10. Fall Time vs Junction Temperature
图 9. Turn OFF Time vs Junction Temperature
7 Parameter Measurement Information
图 11. Timing Diagram
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LM66100
ZHCSJI1A –MARCH 2019–REVISED JUNE 2019
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8 Detailed Description
8.1 Overview
The LM66100 is a Single-Input, Single-Output (SISO) integrated ideal diode that is well suited for a variety of
applications. The device contains a P-channel MOSFET that can operate over an input voltage range of 1.5 V to
5.5 V and can support a maximum continuous current of 1.5 A.
The chip enable works by comparing the CE pin voltage to the input voltage. When the CE pin voltage is higher
than VIN by 80 mV, the device is disabled and the MOSFET is off. When the CE pin voltage is lower than VIN by
250 mV, the MOSFET is on. The LM66100 also comes with reverse polarity protection (RPP) that can protect the
device from a miswired input, such as a reversed battery.
8.2 Functional Block Diagram
8
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ZHCSJI1A –MARCH 2019–REVISED JUNE 2019
8.3 Feature Description
8.3.1 Reverse Polarity Protection (RPP)
In the event a negative input voltage is applied, the ideal diode will stay off and prevent current flow to protect the
system load. For a stand-alone, always on application, CE can be tied to GND so it will not go negative with
respect to GND see 图 12.
图 12. RPP Protection Circuit
8.3.2 Always-ON Reverse Current Blocking (RCB)
By connecting the CE pin to VOUT, this allows the comparator to detect reverse current flow through the switch.
If the output is forced above the selected input by VOFF, the channel will switch off to stop the reverse current
IRCB within tOFF. Once the output falls to below VIN by VON, the device will turn back on.
图 13. RCB Circuit
图 14. RCB Waveforms
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8.4 Device Functional Modes
表 1 summarizes the Device Functional Modes:
表 1. Device Functional Modes
State
OFF
ON
IN-to-OUT
Diode
Power Dissipation
ST State
IOUT x VFWD
IOUT2 x RON
L
Switch
H
9 Application and Implementation
注
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The LM66100 Ideal Diode can be used in a variety of stand-alone and multi-channel applications.
9.2 Typical Applications
9.2.1 Dual Ideal Diode ORing
Two LM66100 Ideal Diodes can be used together for ORing between two power supplies.
图 15. Dual Ideal Diode ORing
9.2.1.1 Design Requirements
Design a circuit that allows the highest input voltage to power a downstream system while providing reverse
current protection.
9.2.1.2 Detailed Design Procedure
This circuit ties the CE of each device to the opposite power source. In this configuration, the highest supply will
always be selected using a make-before-break logic. This prevents any reverse current flow between the
supplies and avoids the need of a dedicated reverse current blocking comparator. For ORing applications that
need RPP, it is recommended to use a series resistor (RCE) to limit the current into the CE pin during a negative
voltage event.
10
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Typical Applications (接下页)
9.2.1.3 Application Curves
The below scope shot shows the output voltage (VOUT) being initially powered by VIN1. When VIN2 is applied, it
powers VOUT because it is a higher voltage. When VIN2 is removed, VOUT is once again powered by VIN1.
图 16. Dual Ideal Diode ORing Behavior
9.2.2 Dual Ideal Diode ORing for Continuous Output Power
VOUT
VIN
+
-
Logic
VIN1 (5V)
CE
GND
ST
RL
CL
+
-
Logic
VIN2 (3.3V)
CE
GND
ST
Status
Indication
图 17. Dual Ideal Diode ORing for Continuous Output Power
9.2.2.1 Design Requirements
The shortcoming of the previous implementation happens when both input voltages are the same for a long
period of time, then both devices will completely turn off, powering down the output load. To avoid this case, the
status output from the priority supply and a pull up resistor can be used causing both devices to switchover at the
same time. For ORing applications that need RPP, it is recommended to use a series resistor (RCE) to limit the
current into the CE pin during a negative voltage event.
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Typical Applications (接下页)
9.2.2.2 Application Curves
The figures below show the switchover performance between VIN1 and VIN2.
图 18. Switchover from VIN1 (5 V) to VIN2 (3.3 V)
图 19. Switchover from VIN2 (3.3V) to VIN1 (5V)
9.2.3 ORing with Discrete MOSFET
图 20. ORing with a Discrete MOSFET
9.2.3.1 Design Requirements
Similar to the Dual Ideal Diode circuit, the Status Output can also be used to control a discrete P-Channel
MOSFET. This can be useful in applications that want to minimize the leakage current on the secondary supply,
such as battery backup systems. This configuration can also be used on systems that require a lower RON on
the secondary rail, useful for higher current applications.
When the Ideal Diode path is enabled, the status will be Hi-Z and pull up the gate of the external PFET to keep it
off. When the main supply (VIN1) drops such that backup supply (VIN2) is higher than VIN1, the ideal diode will
be disabled and pull the ST pin and the PFET gate low to turn on the discrete MOSFET path.
12
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ZHCSJI1A –MARCH 2019–REVISED JUNE 2019
Typical Applications (接下页)
9.2.3.2 Application Curves
The figures below show the switchover performance between VIN1 and VIN2.
图 21. Switchover from VIN1 5 V to VIN2 3.3 V
图 22. Switchover from VIN2 3.3 V to VIN1 5 V
10 Power Supply Recommendations
The device is designed to operate with a VIN range of 1.5 V to 5.5 V. The VIN power supply must be well
regulated and placed as close to the device terminal as possible. The power supply must be able to withstand all
transient load current steps. In most situations, using an input capacitance (CIN) of 1 μF is sufficient to prevent
the supply voltage from dipping when the switch is turned on. In cases where the power supply is slow to
respond to a large transient current or large load current step, additional bulk capacitance may be required on
the input.
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11 Layout
11.1 Layout Guidelines
For best performance, all traces must be as short as possible. To be most effective, the input and output
capacitors must be placed close to the device to minimize the effects that parasitic trace inductances may have
on normal operation. Using wide traces for VIN, VOUT and GND helps minimize the parasitic electrical effects.
11.2 Layout Example
图 23. LM66100 Layout Example
14
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12 器件和文档支持
12.1 接收文档更新通知
要接收文档更新通知，请导航至 TI.com.cn 上的器件产品文件夹。单击右上角的通知我 进行注册，即可每周接收产
品信息更改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。
12.2 社区资源
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.3 商标
E2E is a trademark of Texas Instruments.
12.4 静电放电警告
ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可
能会损坏集成电路。
ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。 精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可
能会导致器件与其发布的规格不相符。
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 机械、封装和可订购信息
以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。数据如有变更，恕不另行通知，且
不会对此文档进行修订。如需获取此数据表的浏览器版本，请查阅左侧的导航栏。
版权 © 2019, Texas Instruments Incorporated
15
PACKAGE OPTION ADDENDUM
www.ti.com
22-Jun-2021
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
LM66100DCKR
LM66100DCKT
ACTIVE
ACTIVE
SC70
SC70
DCK
DCK
6
6
3000 RoHS & Green
250 RoHS & Green
SN
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 125
-40 to 105
1CU
1CU
SN
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
22-Jun-2021
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jun-2019
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LM66100DCKR
LM66100DCKT
SC70
SC70
DCK
DCK
6
6
3000
250
178.0
178.0
9.0
9.0
2.4
2.4
2.5
2.5
1.2
1.2
4.0
4.0
8.0
8.0
Q3
Q3
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jun-2019
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
LM66100DCKR
LM66100DCKT
SC70
SC70
DCK
DCK
6
6
3000
250
180.0
180.0
180.0
180.0
18.0
18.0
Pack Materials-Page 2
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