LM2698MM-ADJ/NOPB [TI]
SIMPLE SWITCHER® 1.35A 升压稳压器 | DGK | 8 | -40 to 125;
| 型号： | LM2698MM-ADJ/NOPB |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | SIMPLE SWITCHER® 1.35A 升压稳压器 | DGK | 8 | -40 to 125 开关 光电二极管 稳压器 |
| 文件： | 总30页 (文件大小：1480K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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LM2698
SNVS153F –MAY 2001–REVISED SEPTEMBER 2016
LM2698 SIMPLE SWITCHER® 1.35-A Boost Regulator
1 Features
3 Description
The LM2698 device is a general purpose PWM boost
1
•
•
•
1.9-A, 0.2-Ω Internal Switch (Typical)
converter. The 1.9-A, 18-V, 0.2-Ω internal switch
enables the LM2698 to provide efficient power
conversion to outputs ranging from 2.2 V to 17 V. It
can operate with input voltages as low as 2.2 V and
as high as 12 V. Current-mode architecture provides
superior line and load regulation and simple
frequency compensation over the device's 2.2 V to
12 V input voltage range. The LM2698 sets the
standard in power density and is capable of supplying
12 V at 400 mA from a 5-V input. The LM2698 can
also be used in flyback or SEPIC topologies.
The LM2698 SIMPLE SWITCHER® features a pin
selectable switching frequency of either 600 kHz or
1.25 MHz. This promotes flexibility in component
selection and filtering techniques. A shutdown pin is
available to suspend the device and decrease the
quiescent current to 5 µA. An external compensation
pin gives the user flexibility in setting frequency
compensation, which makes possible the use of
small, low-ESR ceramic capacitors at the output.
Switchers Made Simple® software is available to
ensure a quick, easy, and assured design. The
LM2698 is available in a low-profile, 8-pin VSSOP
(DGK) package.
Operating Voltage as Low as 2.2 V
600 kHz to 1.25 MHz Adjustable Frequency
Operation
•
•
Switchers Made Simple® Software
8-Pin VSSOP Package
2 Applications
•
•
•
•
•
•
•
•
3.3 V to 5 V and 5 V to 12 V Conversion
Distributed Power
Set-Top Boxes
DSL Modems
Diagnostic Medical Instrumentation
Boost Converters
Flyback Converters
SEPIC Converters
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
LM2698
VSSOP (8)
3.00 mm × 3.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Typical Application Circuit
L
10mH
D
4.5V-5.5V
5
SW
6
VIN
FSLCT
FB
7
2
RFB1
30.1k
12V
400mA
LM2698
3
SHDN
VC
Battery or
Power Source
GND
1
4
CIN
22mF, 10V
COUT
10mF
RC
24.9k
RFB2
3.48k
CC
4.7 nF
CIN: LMK316F226Z (TAIYO YUDEN)
COUT: EMK325B5106K (TAIYO YUDEN)
L: DO3316-103 (COILCRAFT)
D: 0MQ040N (MOTOROLA)
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM2698
SNVS153F –MAY 2001–REVISED SEPTEMBER 2016
www.ti.com
Table of Contents
7.4 Device Functional Modes........................................ 12
Application and Implementation ........................ 14
8.1 Application Information............................................ 14
8.2 Typical Applications ................................................ 14
Power Supply Recommendations...................... 22
1
2
3
4
5
6
Features.................................................................. 1
Applications ........................................................... 1
Description ............................................................. 1
Revision History..................................................... 2
Pin Configuration and Functions......................... 3
Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 5
6.5 Electrical Characteristics........................................... 5
6.6 Typical Characteristics.............................................. 7
Detailed Description .............................................. 9
7.1 Overview .................................................................. 9
7.2 Functional Block Diagram ......................................... 9
7.3 Feature Description................................................... 9
8
9
10 Layout................................................................... 22
10.1 Layout Guidelines ................................................. 22
10.2 Layout Examples................................................... 22
11 Device and Documentation Support ................. 24
11.1 Receiving Notification of Documentation Updates 24
11.2 Community Resources.......................................... 24
11.3 Trademarks........................................................... 24
11.4 Electrostatic Discharge Caution............................ 24
11.5 Glossary................................................................ 24
7
12 Mechanical, Packaging, and Orderable
Information ........................................................... 24
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision E (April 2013) to Revision F
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section .................................................................................................. 1
Deleted Ordering Information table, see POA at the end of the datasheet. .......................................................................... 1
Changed values in the Thermal Information table to align with JEDEC standards................................................................ 5
•
•
Changes from Revision D (April 2013) to Revision E
Page
•
Changed layout of National Semiconductor Data Sheet to TI format .................................................................................... 1
2
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SNVS153F –MAY 2001–REVISED SEPTEMBER 2016
5 Pin Configuration and Functions
DGK Package
8-Pin VSSOP
Top View
VC
FB
1
2
3
4
8
7
6
5
NC
FSLCT
VIN
SHDN
GND
VSW
Not to scale
Pin Functions
PIN
NAME
TYPE(1)
DESCRIPTION
NO.
1
VC
FB
A
A
I
Compensation network connection. Connected to the output of the voltage error amplifier.
Output voltage feedback input.
2
3
SHDN
GND
VSW
VIN
Shutdown control input, active low.
4
G
A
P
I
Analog and power ground.
5
Power switch input. Switch connected between SW pin and GND pin.
Analog power input.
6
7
FSLCT
NC
Switching frequency select input. VIN= 1.25 MHz. Ground = 600 kHz.
Connect to ground.
8
—
(1) A = Analog, G = Ground, I = Input, P = Power
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SNVS153F –MAY 2001–REVISED SEPTEMBER 2016
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
–0.3
–0.3
–0.3
0.965
–0.3
–0.3
MAX
12
UNIT
V
VIN
SW voltage
18
V
FB voltage
7
V
VC voltage
1.565
7
V
SHDN voltage(2)
FSLCT(2)
V
12
V
Power dissipation(3)
Lead temperature
Vapor phase temperature (60 s)
Infrared temperature (15 s)
Junction temperature, TJ
Storage temperature, Tstg
Internally limited
°C
°C
°C
°C
°C
°C
300
215
220
150
150
–65
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Shutdown and voltage frequency select must not exceed VIN
.
(3) The maximum allowable power dissipation is a function of the maximum junction temperature, TJ(MAX), the junction-to-ambient thermal
resistance, θJA, and the ambient temperature, TA. See the Electrical Characteristics for the thermal resistance of various layouts. The
maximum allowable power dissipation at any ambient temperature is calculated using PD (MAX) = (TJ(MAX) – TA) / θJA. Exceeding the
maximum allowable power dissipation causes excessive die temperature, and the regulator goes into thermal shutdown.
6.2 ESD Ratings
VALUE
±2000
±200
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
V(ESD)
Electrostatic discharge
V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
2.2
0
NOM
MAX
12
UNIT
Supply voltage
V
V
SW voltage
Operating junction temperature(1)
17.5
125
–40
°C
(1) All limits are specified at room temperature (standard typeface) and at temperature extremes (bold typeface). All room temperature limits
are 100% tested or specified through statistical analysis. All limits at temperature extremes are specified via correlation using standard
Statistical Quality Control (SQC) methods. All limits are used to calculate Average Outgoing Quality Level (AOQL).
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6.4 Thermal Information
LM2698
THERMAL METRIC(1)
DGK (VSSOP)
UNIT
8 PINS
142.5
49.7
69.5
4
RθJA
Junction-to-ambient thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
ψJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
ψJB
67.8
—
RθJC(bot)
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics
TJ = 25°C, VIN =2.2 V, and IL = 0 A (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN(1)
TYP(2) MAX(1) UNIT
TJ = 25°C
1.3
mA
2
FB = 0 V (not switching)
TJ = –40°C to 125°C
IQ
Quiescent current
TJ = 25°C
5
VSHDN = 0 V
µA
10
TJ = –40°C to 125°C
TJ = 25°C
1.26
VFB
Feedback voltage
Switch current limit
V
TJ = –40°C to 125°C
1.23
1.35
1.29
TJ = 25°C
1.9
ICL
VIN = 2.7 V(3)
A
TJ = –40°C to 125°C
TJ = 25°C
2.4
0.013%
V
%VFB/ΔVIN Feedback voltage line regulation 2.2 V ≤ VIN ≤ 12 V
TJ = –40°C to 125°C
0.1%
TJ = 25°C
0.5
nA
20
IB
FB pin bias current(4)
Input voltage range
TJ = –40°C to 125°C
TJ = –40°C to 125°C
VIN
gm
2.2
40
12
V
TJ = 25°C
135
Error amp transconductance
Error amp voltage gain
Maximum duty cycle
ΔI = 5 µA
µmho
V/V
TJ = –40°C to 125°C
290
AV
120
TJ = 25°C
85%
DMAX
FSLCT = Ground
TJ = –40°C to 125°C
78%
FSLCT = Ground
FSLCT = VIN
15%
30%
600
DMIN
Minimum duty cycle
Switching frequency
TJ = 25°C
FSLCT = Ground
FSLCT = VIN
VSHDN = VIN
kHz
TJ = –40°C to 125°C
TJ = 25°C
480
1
720
1.5
0.1
–1
fS
1.25
0.01
–0.5
MHz
TJ = –40°C to 125°C
TJ = 25°C
TJ = –40°C to 125°C
TJ = 25°C
ISHDN
Shutdown pin current
µA
VSHDN = 0 V
TJ = –40°C to 125°C
(1) All limits are specified at room temperature and at temperature extremes. All room temperature limits are 100% tested or specified
through statistical analysis. All limits at temperature extremes are specified via correlation using standard Statistical Quality Control
(SQC) methods. All limits are used to calculate Average Outgoing Quality Level (AOQL).
(2) Typical numbers are at 25°C and represent the most likely norm.
(3) This is the switch current limit at 0% duty cycle. The switch current limit changes as a function of duty cycle. See Typical Characteristics
for ICL vs VIN
.
(4) Bias current flows into FB pin.
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Electrical Characteristics (continued)
TJ = 25°C, VIN =2.2 V, and IL = 0 A (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN(1)
TYP(2) MAX(1) UNIT
TJ = 25°C
0.01
µA
3
IL
Switch leakage current
VSW = 18 V
TJ = –40°C to 125°C
TJ = 25°C
0.2
RDS(ON)
Switch RDS(ON)
VIN = 2.7 V, ISW = 1 A
Output high
Ω
TJ = –40°C to 125°C
TJ = 25°C
0.4
0.6
TJ = –40°C to 125°C
TJ = 25°C
0.9
THSHDN
SHDN threshold voltage
V
0.6
Output low
TJ = –40°C to 125°C
0.3
1.95
1.85
TJ = 25°C
2.05
On threshold
Off threshold
V
TJ = –40°C to 125°C
TJ = 25°C
2.2
UVP
1.95
V
TJ = –40°C to 125°C
2.1
6
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6.6 Typical Characteristics
VOUT = 8 V
fS = 600 kHz
VOUT = 8 V
fS = 1.25 MHz
Figure 1. Efficiency vs Load Current
Figure 2. Efficiency vs Load Current
TA = 25o C
4.0
2.0
1.9
1.8
TA = 25o C
3.5
TA = 85o C
TA = -40o C
1.7
1.6
1.5
1.4
1.3
TA = 85o C
TA = -40o C
3.0
2.5
2.0
1.2
1.1
1.0
1.5
1.0
14
12
2
8
4
10
6
8
2
4
6
10
12
14
VIN (V)
VIN (V)
600 kHz
Switching
Figure 4. Iq vs VIN
600 kHz
Non-Switching
Figure 3. Iq vs VIN
7
6
2.0
1.9
1.8
TA = 85o C
TA = 25o C
TA = 25o C
TA = -40o C
TA = 85o C
1.7
1.6
TA = -40o C
5
4
3
1.5
1.4
1.3
1.2
1.1
1.0
2
2
2
14
14
8
10
12
8
4
6
4
6
10
12
VIN (V)
VIN (V)
1.25 MHz
Switching
1.25 MHz
Non-Switching
Figure 6. Iq vs VIN
Figure 5. Iq vs VIN
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Typical Characteristics (continued)
250
200
12
TA = 85o C
11
10
TA = 85o C
TA = 25o C
TA = 25o C
TA = -40o C
9
150
100
50
8
7
TA = -40o C
6
5
4
0
4
8
10
12
14
0
2
6
2
12
14
6
4
8
10
VIN (V)
VIN (V)
Figure 8. RDS(ON) vs VIN
Figure 7. Iq(SHDN) vs VIN
TA = -40o C
650
645
1.4
1.38
TA = -40o C
640
1.36
1.34
635
630
TA = 25o C
TA = 85o C
625
620
615
610
605
1.32
1.3
TA = 25o C
TA = 85o C
1.28
1.26
8
6
10
12
14
2
4
2
6
14
4
8
12
10
VIN (V)
VIN (V)
Figure 10. Switching Frequency vs VIN (1.25 MHz)
Figure 9. Switching Frequency vs VIN (600 kHz)
1.560
1.540
2.0
1.9
1.520
1.500
VOUT = 8V
1.8
1.480
1.460
1.440
1.7
1.6
VOUT = 12V
1.5
1.420
1.400
1.4
70
90 110
-50 -30 -10 10 30 50
Temp (oC)
2
3
4
6
7
8
9
10 11
5
VIN (V)
VIN = 3.3 V
VOUT = 8 V
Figure 12. ICL vs VIN
Figure 11. ICL vs Ambient Temperature
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7 Detailed Description
7.1 Overview
The LM2698 is a boost controller with integrated primary switch. The LM2698 functions in current mode control
by sensing the current into the integrated switch and adding a slope to the signal for slope compensation
purpose. The device provides a cycle by cycle current limiting and the duty cycle is limited to 85% to ensure an
additional level of protection. A frequency selection pin FSLCT allows the designer to choose between two
switching frequencies (600 kHz or 1250 kHz). A shutdown pin is available to suspend the device and decrease
the quiescent current to 5 µA by pulling the pin to a logic high.
7.2 Functional Block Diagram
FSLCT
85% Duty
Cycle Limit
Load Current
Measurement
Oscillator
ƒ
SW
+
PWM
SET
RESET
RESET
DRIVE
COMP
-
Driver
-
FB
ERROR
AMP
LOGIC
OVP
UVP
SD
BG
+
THERMAL
-
OVP
COMP
BG
+
BG
+
Internal
Supply
-
Thermal
Shutdown
UVP
COMP
Shutdown
Comparator
Bandgap Voltage
Reference
VIN
VC
GND
SHDN
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7.3 Feature Description
7.3.1 Inductor
The inductor is one of the two energy storage elements in a boost converter. Figure 13 shows how the inductor
current varies during a switching cycle. The current through an inductor is quantified with Equation 1.
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Feature Description (continued)
IL (A)
VIN
VIN - VOUT
[
[
DiL
IL(AVG)
t (s)
D*Ts
Ts
(a)
ID (A)
VIN - VOUT
[
ID(AVG)
=
IOUT(AVG)
t (s)
Ts
D*Ts
(b)
Figure 13. (a) Inductor Current (b) Diode Current
diL(t)
=
VL(t)
[
dt
(1)
If VL(t) is constant, diL / dt must be constant, thus the current in the inductor changes at a constant rate. This is
the case in DC/DC converters since the voltages at the input and output can be approximated as a constant. The
current through the inductor of the LM2698 boost converter is shown in Figure 13(a). The important quantities in
determining a proper inductance value are IL(AVG) (the average inductor current) and ΔiL (the inductor current
ripple). If ΔiL is larger than IL(AVG), the inductor current drops to zero for a portion of the cycle and the converter
operates in discontinuous conduction mode. If ΔiL is smaller than IL(AVG), the inductor current stays above zero
and the converter operates in continuous conduction mode (CCM). All the analysis in this datasheet assumes
operation in continuous conduction mode. To operate in CCM, use Equation 2, Equation 3, and Equation 4.
IL(AVG) > ΔiL
(2)
IOUT(AVG)
VIN x D
>
2 x fS x L
1-5
(3)
VIN x D x (1-D)
2 x fS x IOUT(AVG)
[ >
(4)
Choose the minimum IOUT to determine the minimum L for CCM operation. A common choice is to set ΔiL to 30%
of IL(AVG)
.
The inductance value also affects the stability of the converter. Because the LM2698 utilizes current mode
control, the inductor value must be carefully chosen. See Compensation for recommended inductance values.
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Feature Description (continued)
Choosing an appropriate core size for the inductor involves calculating the average and peak currents expected
through the inductor. In a boost converter, use Equation 5 and Equation 6 (where Equation 7 calculates ΔiL).
IOUT(AVG)
IL(AVG)
=
1-5
,
(5)
(6)
IL(Peak) = IL(AVG) + ΔiL
DVIN
DiL =
2Lfs
(7)
A core size with ratings higher than these values must be chosen. If the core is not properly rated, saturation
dramatically reduces overall efficiency.
7.3.2 Current Limit
The current limit in the LM2698 is referenced to the peak switch current. The peak currents in the switch of a
boost converter is always higher than the average current supplied to the load. To determine the maximum
average output current that the LM2698 can supply, use Equation 8.
IOUT(MAX) = (ICL – ΔiL) × (1 – D) = (ICL – ΔiL) × VIN / VOUT
where
•
ICL is the switch current limit (see Electrical Characteristics)
(8)
Hence, as VIN increases, the maximum current that can be supplied to the load increases, as shown in
Figure 14.
1.6
1.4
VOUT = 12V
1.2
1.0
0.8
0.6
0.4
0.2
0
2
4
8
10
12
6
VIN (V)
Figure 14. Maximum Output Current vs Input Voltage
7.3.3 Diode
The diode in a boost converter such as the LM2698 acts as a switch to the output. During the first cycle, when
the transistor is closed, the diode is reverse biased and current is blocked; the load current is supplied by the
output capacitor. In the second cycle, the transistor is open and the diode is forward biased; the load current is
supplied by the inductor.
Observation of the boost converter circuit shows that the average current through the diode is the average load
current, and the peak current through the diode is the peak current through the inductor. The diode must be rated
to handle more than its peak current. To improve efficiency, a low forward drop Schottky diode is recommended.
7.3.4 Input Capacitor
Due to the presence of an inductor at the input of a boost converter, the input current waveform is continuous
and triangular. The inductor ensures that the input capacitor sees fairly low ripple currents. However, as the
inductor gets smaller, the input ripple increases. The rms current in the input capacitor is given by Equation 9.
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Feature Description (continued)
2
)
VinVo - Vin
1
=
ICIN(RMS) = DiL/ 3
)
2
fs L Vo
3
(9)
The input capacitor must be capable of handling the rms current. Although the input capacitor is not so critical in
boost applications, a 10 µF or higher value, good quality capacitor prevents any impedance interactions with the
input supply.
A 0.1-µF or 1-µF ceramic bypass capacitor is also recommended on the VIN pin (pin 6) of the IC. This capacitor
must be connected very close to pin 6 to effectively filter high frequency noise. When operating at 1.25-MHz
switching frequency, a minimum bypass capacitance of 0.22 µF is recommended.
7.3.5 Output Capacitor
The output capacitor in a boost converter provides all the output current when the switch is closed and the
inductor is charging. As a result, it sees very large ripple currents. The output capacitor must be capable of
handling the maximum RMS current. The RMS current in the output capacitor is calculated with Equation 10
(where Equation 11 calculates ΔiL).
2
[
DiL
3
D
2
OUT
(1-D) I
ICOUT(RMS)
=
+
[
(1-D)2
where
•
D = (VOUT – VIN) / VOUT
(10)
(11)
DVIN
2Lfs
DiL =
The ESR and ESL of the output capacitor directly control the output ripple. Use capacitors with low ESR and ESL
at the output for high efficiency and low ripple voltage. Surface mount tantalums, surface mount polymer
electrolytic, and polymer tantalum, Sanyo OS-CON, or multi-layer ceramic capacitors are recommended at the
output.
7.4 Device Functional Modes
7.4.1 Continuous Conduction Mode
L
D
RLOAD
VIN
COUT
PWM
L
X
+
+
-
L
RLOAD
VOUT
RLOAD
VOUT
VIN
VIN
COUT
COUT
-
Cycle 1
(a)
Cycle 2
(b)
Figure 15. Simplified Boost Converter Diagram
(a) First Cycle of Operation (b) Second Cycle Of Operation
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Device Functional Modes (continued)
The LM2698 is a current-mode, PWM boost regulator. A boost regulator steps the input voltage up to a higher
output voltage. In continuous conduction mode (when the inductor current never reaches zero at steady state),
the boost regulator operates in two cycles.
In the first cycle of operation, shown in Figure 15 (a), the transistor is closed and the diode is reverse biased.
Energy is collected in the inductor and the load current is supplied by COUT
.
The second cycle is shown in Figure 15 (b). During this cycle, the transistor is open and the diode is forward
biased. The energy stored in the inductor is transferred to the load and output capacitor.
The ratio of these two cycles determines the output voltage. The output voltage is defined with Equation 12.
VIN
VOUT
=
1-5
where
•
D is the duty cycle of the switch
(12)
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The following sections detail typical applications for this device with Boost and SEPIC converters. The SEPIC
converter allows step-up and step-down operation and provides a decoupling of the input voltage to the output
voltage through the central capacitor which can help protect the input or output in case of faults. The
WEBENCH® Design Tool may be used to generate a complete design. This tool utilizes an iterative design
procedure and has access to a comprehensive database of components. This allows the tool to create an
optimized design and allows the user to experiment with various design options.
8.2 Typical Applications
8.2.1 1.25-MHz Boost Converter
Figure 16 shows the LM2698 boosting 3.3 V to 10 V at 300 mA.
L1
10mH
D
2.5V to 3.3V
5
SW
6
7
2
FSLCT
VIN
LM2698
RFB1
1M
Battery or
Power
Source
10V
3
FB
SHDN
CIN
22mF
VC
GND
1
4
COUT
10mF
RC
20k
RFB2
140k
CC
4.7nF
Copyright © 2016, Texas Instruments Incorporated
Figure 16. 3.3-V to 10-V Boost Converter
8.2.1.1 Design Requirements
The minimum input voltage for this application is 2.5 V. Absolute Maximum switch node voltage is 18 V which
limits the maximum output voltage to less than 17 V. For high output voltage applications (>12 V) proper layout is
critical to avoid excessive voltage ringing of the switch node and subsequent damage to the part each time the
internal switch turns OFF. In general, proper layout is critical for the efficient operation of the converter. The
maximum voltage for VIN is 12 V. If the input of the converter exceeds 12 V, VIN must be connected to another
rail or to the input through a linear regulator or similar circuit. Level-Shifted SEPIC shows such an example of a
step-down voltage circuit for the VIN pin.
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Typical Applications (continued)
8.2.1.2 Detailed Design Procedure
As discussed in Compensation, the RDS(ON) of the internal FET in the LM2698 raises as the input voltage drops
below 5 V (see Typical Characteristics). The minimum input voltage for this application is 2.5 V, at which point
the RDS(ON) is approximately 200 mΩ. Substituting these values in for Equation 13, it is found that either a 10 µH
(1.25-MHz operation) or a 22 µH (600-kHz operation) is necessary for a stable design. The circuit is operated at
1.25 MHz to allow for a smaller inductance. From the Quick Compensator Design equations, RC is calculated as
18.6 kΩ, and a 20-kΩ resistor is used.
8.2.1.2.1 Compensation
This section presents a step-by-step procedure to design the compensation network at pin 1 (VC) of the LM2698.
These design methods produce a conservative and stable control loop.
There is a minimum inductance requirement in any current mode converter. This is a function of VOUT, duty cycle,
and switching frequency, among other things. Figure 18 plots the recommended inductance range vs duty cycle
for VOUT = 12 V. The two lines represent the upper and lower bounds of the recommended inductance range.
The simplified compensation procedure that follows assumes that the inductance never drops below the Q = 5
line. Figure 18 is plotted with Equation 13.
VOUT x RDSON
1
pQ
+ 5 - 0.ꢀ
[ =
(
)
{e
where
•
•
•
RDSON = 0.15
Se = 0.072 × fS
Q = 0.5 and 5
(13)
Use Q = 5 to calculate the minimum inductance recommended for a stable design. Choosing an inductor
between the Q = 0.5 and Q = 5 values provides a good tradeoff between size and stability. Note that as VIN
drops less than 5 V, RDS(ON) increases, as shown in Figure 8. The worst case RDS(ON) must be used when
choosing the inductance. To view plots for different Vout, multiply the Y axis by a factor of VOUT / 12, or plot
Equation 13 for the respective output voltage.
25
50
45
VOUT = 12V
VOUT = 12V
20
40
35
15
30
Q = 0.5
Q = 0.5
25
20
15
10
10
5
Q = 5
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Q = 5
5
1
1
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Duty Cycle (1-VIN/VOUT
)
Duty Cycle (1-VIN/VOUT
)
(b)
(a)
Figure 18. Minimum Inductance Requirements
for (b) fS = 1.25 MHz
Figure 17. Minimum Inductance Requirements
for (a) fS = 600 kHz
The goal of the compensation network is to provide the best static and dynamic performance while insuring
stability over line and load variations. The relationship of stability and performance can be best analyzed by
plotting the magnitude and phase of the open loop frequency response in the form of a bode plot. A typical bode
plot of the LM2698 open loop frequency response is shown in Figure 19.
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Typical Applications (continued)
W
= 0ꢅ15 , [ = 10uI
.ꢁndꢄidꢂꢃ = 6ꢅ9kIz, tꢃꢁse aꢁrgin = 78ꢅ4 , w
ꢀ{hb
60
40
20
0
toꢄersꢂꢁge
/ompensꢁꢂor
Ç
ó
ó
ó
ó
h
h
-20
-40
10e1
10e2
10e3
10e4
10e5
10e6
Crequency (Iz)
0
-50
h
ó
ó
-100
-150
h
-200
10e1
10e2
10e3
10e4
10e5
10e6
Crequency (Iz)
Figure 19. Bode Plot of the LM2698 Frequency Response Using the Typical Application Circuit
Poles are marked with an X, and zeros are marked with a O. The bolded O labeled fRHP is a right-half plane zero.
Right half plane zeros act like normal zeros to the magnitude (20 dB / decade slope influence) and like poles to
the phase (–90° shift). Three curves are shown. The powerstage curve is the frequency response of the
powerstage, which includes the switch, diode, inductor, output capacitor, and load. The compensator curve is the
frequency response of the compensator, which is the error amp combined with the compensation network. T is
the product of the powerstage and the compensator and is the complete open loop frequency response. The
power stage response is fixed by line and load constraints, while the compensator is set by the external
compensation network at pin 1. The compensator can be designed in a few simple steps as follows.
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Typical Applications (continued)
8.2.1.2.1.1 Quick Compensator Design
Calculate the quick compensator design using Equation 14 through Equation 19 (where Equation 15 calculates
RLOAD(MIN) and Equation 20 calculates ADC).
1
ö
(rad/s)
wPI(MAX)
COUTRLOAD(MIN)
(14)
(15)
VOUT
RLOAD(MIN)
=
IOUT(MAX)
2
(
(rad/s)
VIN(MIN)
VOUT
RLOAD(MIN)
(
wRHP(MIN)
=
[
(16)
(17)
1
ö
Set wP2 = 2p(40)(rad/s)
(rad/s)
CC1ROUT
where
•
ROUT = 875 kΩ
Choose CC1 = 4.7 nF
ADCwP2
wRHP(MIN)
1
(rad/s),
w
z2 = 10 x wP1(max)
=
CC1RC
(18)
(19)
wRHP(MIN)
10 x ADCCC1wP1(max)wP2
W
RC =
118 * RLOAD(MIN)
ADC
=
x
RDSON(MIN)
(1 - DMAX
)
(1 - DMAX)3 RLOAD(MIN)
0.144 * fSL
+ 1 + DMAX
1 +
(
)
2LfS
VINRDSON(MIN)
(20)
If the output capacitor is of high ESR (0.1 Ω or higher), it may be necessary to use CC2. A rule of thumb is that if
1 / (2πCOUTESR) (Hz) is lower than fS / 2 (Hz), CC2 must be used. Choose CC2 with Equation 21.
(RC + ROUT)(COUT × ESR) / (RC × ROUT)(F)
where
•
ROUT = output impedance of the error amp (875 kΩ)
(21)
8.2.1.2.1.2 Improving Transient Response Time
The above compensator design provides a loop gain with high phase margin for a large stability margin. The
transient response time of this loop is limited by the lower mid-frequency gain necessary to achieve a high phase
margin. If it is desired to increase the transient response time, CC1 may be decreased. Decreasing CC1 by 2x, 4x,
and 6x yields increasingly shorter transient response times, however the loop phase margin becomes
progressively lower as CC1 is decreased. When optimizing the loop gain for transient response time, it is
recommended to keep the phase margin above 40°.
8.2.1.2.1.3 Additional Comments on the Open Loop Frequency Response
The procedure used here to pick the compensation network provides a good starting point. In most cases, these
values is sufficient for a stable design. It is always recommended to check the design in a real test setup. This is
easy to do with the aid of a dynamic load. Set the high and low load values to your system requirements and
switch between the two at about 1kHz. View the output voltage with an oscilloscope using AC coupling, and
zoom in enough to see the waveform react to the load change. Use Table 1 to determine if your design is stable.
Remember to use worst case conditions (VIN(MIN), ROUT(MIN), ROUT(MAX)).
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Typical Applications (continued)
Table 1. Compensation Troubleshooting Chart
RESPONSE
CONCLUSION
Nearing instability
Stable
WHAT TO CHANGE
Make CC1 larger
Nothing
Underdamped, weak attenuation
Underdamped, strong attenuation
Critically damped
Stable
Nothing
Overdamped
Stable
Nothing
8.2.1.3 Application Curves
1
0.95
0.9
0.85
0.8
0.75
0.7
0.65
0.6
0.55
0.5
0
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4
Output Current (A)
D001
Figure 21. Start-up Waveform
Figure 20. Efficiency Vin = 3.3 V, Vout = 10 V
(With Sumida CDRH6D38-100 Inductor)
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8.2.2 3.3-V SEPIC
The LM2698 can be used to implement a SEPIC technology. The advantages of the SEPIC topology are that it
can step up or step down an input voltage, and it has low input current ripple.
L1
10mH
D0-1608
D
CSEPIC
1mF
(Schottky)
2.2V - 12V
L2
10mH
5
SW
D0-1608
7
2
6
VIN
FSLCT
FB
RFB1
20k
LM2698
3.3V
3
Battery or
Power
Source
SHDN
VC
GND
1
4
CIN
22mF
Ceramic
COUT
10mF
Ceramic
RC
10k
RFB2
12.1k
CC
680pF
Copyright © 2016, Texas Instruments Incorporated
Figure 22. 3.3-V SEPIC Converter
8.2.2.1 Design Requirements
The input voltage, output voltages, and load currents are necessary to properly design the SEPIC converter. The
maximum current that the converter can deliver depends on the internal peak current limit set by the LM2698 and
the choice of inductor and switching frequency. See details of the design procedure in the next section. Do not
exceed absolute maximum ratings for the pin. The switch node voltage swings between 0 V and VIN+Vout+Vfd,
where Vfd is the forward voltage of the diode. In addition to this voltage, the ringing at the switch node could
increase the voltage stress on the SW pin and lead to a violation of the absolute maximum voltage on that pin.
8.2.2.2 Detailed Design Procedure
The conversion ratio for the SEPIC is Equation 22.
VOUT
D
D'
=
VIN
where
•
D' = 1 − D
(22)
(23)
Solving for D yields Equation 23.
1
D =
1+ VIN / VOUT
To avoid subharmonic oscillations, it is recommended that inductors L1 and L2 be the same inductance. Currents
conducted by the inductors are:
I1 = IOUT(VOUT / VIN)
Δi1 = VIND / (2 × L1 × fs)
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I2 = IOUT
Δi1 = VIND / (2 × L2 × fs)
The switch sees a maximum current of I1 + I2 + Δi1 + Δi2. If L1 = L2 = L, the maximum switch current is given by
Equation 24.
IOUT(1 + VOUT / VIN) + VIND / (L × fs)
(24)
The maximum load current is limited by this relationship to the switch current.
The polarity of CSEPIC changes between each cycle, so a ceramic capacitor must be used here. A high-quality,
low-ESR capacitor directly improves efficiency because all load currents pass through CSEPIC
.
CIN must be chosen using the same relationship as in the boost converter. CIN must be able to provide the
necessary RMS current.
8.2.2.3 Application Curve
1
0.95
0.9
0.85
0.8
0.75
0.7
0.65
2.5Vin
3.3Vin
5Vin
8Vin
0.6
0.55
0.5
0
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4
Output Current (A)
D002
Figure 23. Efficiency
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8.2.3 Level-Shifted SEPIC
The circuit shown in Figure 24 is similar to the SEPIC shown in Figure 22, except that it is level shifted to provide
a negative output voltage. This is achieved by connecting the ground of the LM2698 to the output.
L1
CSEPIC
D
6.8mH
1mF
(Schottky)
12V
5
SW
500
L2
6.8mH
6
7
2
VIN
FSLCT
FB
RFB1
30.1
k
LM2698
6.8V
3
SHDN
Battery or
Power
Source
VC
0.1mF
GND
4
1
COUT
10mF
RFB2
10k
CIN
47mF
RC
10k
CC
680pF
-5V, 400mA
Copyright © 2016, Texas Instruments Incorporated
Figure 24. Level-Shifted SEPIC Converter
8.2.3.1 Design Requirements
The circuit analysis for the level-shifted SEPIC is the same as the SEPIC. The voltage at the input of the LM2698
must be clamped if the absolute value of the output voltage plus the input voltage exceeds 12 V, the absolute
maximum rating for the VIN pin. The simplest way to do this is with a Zener diode, as shown in Figure 24.
Likewise, if the FSLCT pin is pulled high to operate at 1.25 MHz, its voltage must not exceed 12 V. To prevent
any high frequency noise from entering the LM2698's internal circuitry, a high-frequency bypass capacitor must
be placed as close to pin 6 as possible. A good choice for this capacitor is a 0.1-µF ceramic capacitor.
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9 Power Supply Recommendations
The output power of the LM2698 is limited by its maximum power dissipation. The maximum power dissipation is
determined by Equation 25.
PD = (Tjmax – TA) / RθJA
where
•
•
•
Tjmax is the maximum specified junction temperature (125°C)
TA is the ambient temperature
RθJA is the thermal resistance of the package
(25)
RθJA is dependant on the layout of the board as shown in Layout Examples.
10 Layout
10.1 Layout Guidelines
The GND pin and the NC pin is recommended to be connected by a short trace as shown in Layout Examples.
Table 2 shows the thermal resistance using different scenarios.
Table 2. Thermal Resistance
PARAMETER
TYP
235
225
220
200
195
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
Junction to Ambient Figure 25
Junction to Ambient Figure 26
Junction to Ambient Figure 27
Junction to Ambient Figure 28
Junction to Ambient Figure 29
θJA
Thermal Resistance
10.2 Layout Examples
Junction to ambient thermal resistance (no external
heat sink) for the MSO8 package with minimal trace
widths (0.010 inches) from the pins to the circuit.
Junction to ambient thermal resistance for the MSO8 package with
minimal trace widths (0.010 inches) from the pins to the circuit and
approximately 0.0191 sq. in. of copper heat sinking.
Figure 25. Pad Layout Scenario 'A'
Figure 26. Pad Layout Scenario 'B'
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Layout Examples (continued)
Junction to ambient thermal resistance for the MSO8
package with minimal trace widths (0.010 inches)
from the pins to the circuit and approximately 0.0465
sq. in. of copper heat sinking.
Junction to ambient thermal resistance for the MSO8 package with
minimal trace widths (0.010 inches) from the pins to the circuit and
approximately 0.2523 sq. in. of copper heat sinking.
Figure 27. Pad Layout Scenario 'C'
Figure 28. Pad Layout Scenario 'D'
Junction to ambient thermal resistance for the MSO8 package with minimal trace widths (0.010 inches) from
the pins to the circuit and approximately 0.0098 sq. in. of copper heat sinking on the top layer and 0.0760
sq. in. of copper heat sinking on the bottom layer, with three 0.020 in. vias connecting the planes.
Figure 29. Pad Layout Scenario 'E'
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11 Device and Documentation Support
11.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.3 Trademarks
E2E is a trademark of Texas Instruments.
SIMPLE SWITCHER is a registered trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
LM2698MM-ADJ/NOPB
ACTIVE
VSSOP
DGK
8
1000 RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
S22B
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
4-Feb-2016
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LM2698MM-ADJ/NOPB VSSOP
DGK
8
1000
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
4-Feb-2016
*All dimensions are nominal
Device
Package Type Package Drawing Pins
VSSOP DGK
SPQ
Length (mm) Width (mm) Height (mm)
210.0 185.0 35.0
LM2698MM-ADJ/NOPB
8
1000
Pack Materials-Page 2
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