LM185BYH-1.2-SMD [TI]

LM185-1.2QML Micropower Voltage Reference Diode; LM185-1.2QML微功耗电压基准二极管
LM185BYH-1.2-SMD
型号: LM185BYH-1.2-SMD
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

LM185-1.2QML Micropower Voltage Reference Diode
LM185-1.2QML微功耗电压基准二极管

二极管
文件: 总13页 (文件大小:726K)
中文:  中文翻译
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LM185-1.2QML  
LM185-1.2QML Micropower Voltage Reference Diode  
Literature Number: SNVS384  
October 2005  
LM185-1.2QML  
Micropower Voltage Reference Diode  
The extremely low power drain of the LM185-1.2 makes it  
useful for micropower circuitry. This voltage reference can be  
used to make portable meters, regulators or general purpose  
analog circuitry with battery life approaching shelf life.  
General Description  
The LM185-1.2 is a micropower 2-terminal band-gap voltage  
regulator diodes. Operating over a 10µA to 20mA current  
range, it features exceptionally low dynamic impedance and  
good temperature stability. On-chip trimming is used to pro-  
vide tight voltage tolerance. Since the LM185-1.2 band-gap  
reference uses only transistors and resistors, low noise and  
good long term stability result.  
Further, the wide operating current allows it to replace older  
references with a tighter tolerance part.  
Features  
n Operating current of 10µA to 20mA  
n 1maximum dynamic impedance (typical)  
n Low temperature coefficient  
n Low voltage reference - 1.235V  
Careful design of the LM185-1.2 has made the device ex-  
ceptionally tolerant of capacitive loading, making it easy to  
use in almost any reference application. The wide dynamic  
operating range allows its use with widely varying supplies  
with excellent regulation.  
Ordering Information  
NS Part Number  
LM185E-1.2/883  
LM185H-1.2-SMD  
LM185H-1.2-QV  
JAN Part Number  
5962–87594012A  
5962–8759401XA  
5962–8759401VXA  
5962–8759401YA  
5962–8759405XA  
5962–8759401VYA  
NS Package Number  
Package Description  
20LD LCC  
E20A  
H02A  
2 LD T0–46  
H02A  
2 LD T0–46  
LM185WG-1.2/883  
LM185BYH-1.2-SMD  
LM185WG-1.2-QV  
WG10A  
H02A  
10LD Ceramic SOIC  
2 LD T0–46  
WG10A  
10LD Ceramic SOIC  
Connection Diagrams  
TO-46  
Hermetic Leadless Chip Carrier (E)  
Metal Can Package (H)  
20156106  
Bottom View  
20156135  
See NS Package Number E20A  
See NS Package Number H02A  
© 2005 National Semiconductor Corporation  
DS201561  
www.national.com  
Connection Diagrams (Continued)  
Ceramic SOIC (WG)  
20156134  
See NS Package Number WG10A  
Schematic Diagram  
20156107  
www.national.com  
2
Absolute Maximum Ratings (Note 1)  
Reverse Current  
30mA  
10mA  
Forward Current  
Operating Temperature Range  
Maximum Junction Temperature (TJmax) (Note 2)  
Storage Temperature  
Lead Temperature (Soldering 10 Seconds)  
Ceramic SOIC  
−55˚C TA +125˚C  
+150˚C  
−55˚C TA +150˚C  
260˚C  
300˚C  
300˚C  
TO-46 package  
20LD LCC package  
Thermal Resistance  
θJA  
Metal Can (Still Air)  
Metal Can (500LF / Min Air Flow)  
20LD LCC (Still Air)  
20LD LCC (500LF / Min Air Flow)  
Ceramic SOIC (Still Air)  
Ceramic SOIC (500LF / Min Air Flow)  
θJC  
300˚C/W  
139˚C/W  
100˚C/W  
73˚C/W  
194˚C/W  
128˚C/W  
Metal Can  
57˚C/W  
25˚C/W  
23˚C/W  
20LD LCC  
Ceramic SOIC  
Package Weight (Typical)  
Metal Can  
TBD  
TBD  
20LD LCC  
Ceramic SOIC  
210mg  
4KV  
ESD Tolerance (Note 3)  
Quality Conformance Inspection  
Mil-Std-883, Method 5005 - Group A  
Subgroup  
Description  
Static tests at  
Temp ˚C  
25  
1
2
Static tests at  
125  
-55  
25  
3
Static tests at  
4
Dynamic tests at  
Dynamic tests at  
Dynamic tests at  
Functional tests at  
Functional tests at  
Functional tests at  
Switching tests at  
Switching tests at  
Switching tests at  
Settling time at  
Settling time at  
Settling time at  
5
125  
-55  
25  
6
7
8A  
8B  
9
125  
-55  
25  
10  
11  
12  
13  
14  
125  
-55  
25  
125  
-55  
3
www.national.com  
LM185–1.2 Electrical Characteristics  
DC Parameters  
Sub-  
groups  
Symbol  
VRef  
Parameter  
Conditions  
Notes  
Min Max  
Units  
Reverse Breakdown Voltage  
IR = 10µA  
IR = 20µA  
IR = 1mA  
1.223 1.247  
1.205 1.26  
1.223 1.247  
1.205 1.26  
1.223 1.247  
1.205 1.26  
V
V
1
2, 3  
1
V
V
2, 3  
1
IR = 20mA  
V
V
2, 3  
1
VRef / IR Reverse Breakdown Voltage  
10µA IR 1mA  
20µA IR 1mA  
1mA IR 20mA  
-1.0  
-1.5  
1.0  
1.5  
mV  
mV  
mV  
mV  
V
Change with Current  
2, 3  
1
-10.0 10.0  
-20.0 20.0  
2, 3  
1
VF  
Forward Bias Voltage  
IF = 2mA  
-1.0  
-0.4  
DC Drift Parameters  
Delta calculations performed on QMLV devices at group B , subgroup 5, unless otherwise specified on the IPI.  
Sub-  
groups  
Symbol  
VR  
Parameter  
Conditions  
Notes  
Min Max  
Units  
Reverse Breakdown Voltage  
IR = 10µA  
IR = 20mA  
-0.01 0.01  
-0.01 0.01  
V
V
1
1
LM185BY–1.2 Electrical Characteristics  
DC Parameters  
Sub-  
groups  
1
Symbol  
VRef  
Parameter  
Conditions  
Notes  
Min Max  
Units  
Reverse Breakdown Voltage  
IR = 10µA  
IR = 20µA  
IR = 1mA  
1.223 1.247  
1.205 1.26  
1.223 1.247  
1.205 1.26  
1.223 1.247  
1.205 1.26  
V
V
2, 3  
1
V
V
2, 3  
1
IR = 20mA  
V
V
2, 3  
1
VRef / IR Reverse Breakdown Voltage  
10µA IR 1mA  
20µA IR 1mA  
1mA IR 20mA  
-1.0  
-1.5  
1.0  
1.5  
mV  
mV  
mV  
mV  
V
Change with Current  
2, 3  
1
-10.0 10.0  
-20.0 20.0  
2, 3  
1
VF  
TC  
Forward Bias Voltage  
IF = 2mA  
-1.0  
-0.4  
50  
Temperature Coefficient  
(Note 4)  
PPM/˚C  
2, 3  
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is  
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed  
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test  
conditions.  
Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by T  
(maximum junction temperature), θ (package junction  
JA  
Jmax  
to ambient thermal resistance), and T (ambient temperature). The maximum allowable power dissipation at any temperature is P  
= (T  
- T )/θ or the  
A
Dmax  
Jmax A JA  
number given in the Absolute Maximum Ratings, whichever is lower.  
Note 3: Human body model, 1.5Kin series with 100pF.  
Note 4: The average temperature coefficient is defined as the maximum deviation of reference voltage, at all measured temperatures between the operating T  
Min  
& T , divided by (T  
Max  
− T ). The measured temperatures (T  
Min  
) are −55˚C, 25˚C, & 125˚C or V  
Measured  
/ (T  
− T  
Min  
)
Max  
Ref  
Max  
www.national.com  
4
Typical Performance Characteristics  
Reverse Characteristics  
Reverse Characteristics  
20156113  
20156114  
Temperature Drift of 3  
Representative Units  
Forward Characteristics  
20156116  
20156115  
Reverse Dynamic Impedance  
Reverse Dynamic Impedance  
20156118  
20156117  
5
www.national.com  
Typical Performance Characteristics (Continued)  
Noise Voltage  
Filtered Output Noise  
20156120  
20156119  
Response Time  
20156121  
Typical Applications  
Reference from  
1.5V Battery  
Wide Input  
Range Reference  
20156123  
20156108  
Micropower Reference  
from 9V Battery  
20156122  
www.national.com  
6
Typical Applications (Continued)  
Precision 1µA to 1mA Current Sources  
Micropower* 5V Regulator  
20156126  
20156124  
*I . 30µA  
Q
Micropower* 10V Reference  
20156127  
20156125  
*I .20µA standby current  
Q
7
www.national.com  
Typical Applications (Continued)  
METER THERMOMETERS  
Centigrade Thermometer  
0˚C−100˚C Thermometer  
20156101  
20156128  
Calibration  
Calibration  
1. Adjust R1 so that V1 = temp at 1mV/˚K  
2. Adjust V2 to 273.2mV  
1. Short LM385-1.2, adjust R3 for I  
= temp at 1µA/˚K  
OUT  
2. Remove short, adjust R2 for correct reading in centigrade  
I
for 1.3V to 1.6V battery volt-  
Q
I
at 1.3V.500µA  
Q
age = 50µA to 150µA  
I
Q
at 1.6V.2.4mA  
Micropower Thermocouple Cold Junction  
Compensator  
Lower Power Thermometer  
20156129  
*2N3638 or 2N2907 select for inverse H . 5  
FE  
Select for operation at 1.3V  
. 600µA to 900µA  
I
Q
0˚F−50˚F Thermometer  
20156131  
Adjustment Procedure  
1. Adjust TC ADJ pot until voltage across R1 equals Kelvin temperature  
multiplied by the thermocouple Seebeck coefficient.  
2. Adjust zero ADJ pot until voltage across R2 equals the thermocouple  
Seebeck coefficient multiplied by 273.2.  
Thermocouple Seebeck R1 R2 Voltage  
Voltage  
Across  
R2  
Type  
Coefficient () () Across  
R1  
@
(µV/˚C)  
25˚C  
(mV)  
(mV)  
15.60  
12.77  
12.17  
1.908  
20156130  
J
T
K
S
52.3  
42.8  
40.8  
6.4  
5231.24k  
432 1k  
412953Ω  
63.4150Ω  
14.32  
11.78  
11.17  
1.766  
Calibration  
1. Short LM385-1.2, adjust R3 for I  
= temp at 1.8µA/˚K  
OUT  
2. Remove short, adjust R2 for correct reading in ˚F  
Typical supply current 50µA  
www.national.com  
8
Revision History Section  
Released  
Revision  
Section  
Originator  
Changes  
10/07/05  
A
New Release, Corporate format  
L. Lytle  
2 MDS data sheets converted into one Corp.  
data sheet format. MNLM185-1.2-X Rev 2A3  
and MNLM185BY-1.2-X Rev 0B0 data  
sheets will be archived.  
9
www.national.com  
Physical Dimensions inches (millimeters) unless otherwise noted  
TO-46 Metal Can Package (H)  
NS Package Number H02A  
Leadless Chip Carrier Package (E)  
NS Package Number E20A  
www.national.com  
10  
Physical Dimensions inches (millimeters) unless otherwise noted (Continued)  
Ceramic SOIC Package (WG)  
NS Package Number WG10A  
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