LM185-1.2QML-SP [TI]
耐辐射 QMLV、1.2V 并联电压基准;
| 型号： | LM185-1.2QML-SP |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 耐辐射 QMLV、1.2V 并联电压基准 |
| 文件： | 总20页 (文件大小：707K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LM185-1.2QML
www.ti.com
SNVS384B –OCTOBER 2005–REVISED JANUARY 2014
LM185-1.2QML Micropower Voltage Reference Diode
Check for Samples: LM185-1.2QML
1
FEATURES
DESCRIPTION
The LM185-1.2 is a micropower 2-terminal band-gap
voltage regulator diodes. Operating over a 10μA to
20mA current range, it features exceptionally low
dynamic impedance and good temperature stability.
On-chip trimming is used to provide tight voltage
tolerance. Since the LM185-1.2 band-gap reference
uses only transistors and resistors, low noise and
good long term stability result.
2
•
•
•
•
Operating Current of 10μA to 20mA
1Ω Maximum Dynamic Impedance (Typical)
Low Temperature Coefficient
Radiation Qualified Option
–
–
100 krad
Low Dose Rate Tested at 10 mrad/s
Careful design of the LM185-1.2 has made the device
exceptionally tolerant of capacitive loading, making it
easy to use in almost any reference application. The
wide dynamic operating range allows its use with
widely varying supplies with excellent regulation.
The extremely low power drain of the LM185-1.2
makes it useful for micropower circuitry. This voltage
reference can be used to make portable meters,
regulators or general purpose analog circuitry with
battery life approaching shelf life.
Further, the wide operating current allows it to
replace older references with a tighter tolerance part.
Connection Diagrams
Figure 1. LCCC Package
See Package Number NAJ0020A
Figure 2. TO Package – Bottom View
See Package Number NDU0002A
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2014, Texas Instruments Incorporated
LM185-1.2QML
SNVS384B –OCTOBER 2005–REVISED JANUARY 2014
www.ti.com
1
2
3
4
5
10
9
NC
NC
NC
NC
V-
+V
NC
NC
NC
NC
REF
8
7
6
Figure 3. CLGA Package
See Package Number NAC0010A
Schematic Diagram
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2
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SNVS384B –OCTOBER 2005–REVISED JANUARY 2014
Absolute Maximum Ratings(1)
Reverse Current
30mA
10mA
Forward Current
Operating Temperature Range
−55°C ≤ TA ≤ +125°C
+150°C
(2)
Maximum Junction Temperature (TJmax
)
Storage Temperature
−55°C ≤ TA ≤ +150°C
260°C
Lead Temperature (Soldering 10
Seconds)
CLGA
TO package
20LD LCCC package
θJA
300°C
300°C
Thermal Resistance
TO (Still Air)
300°C/W
139°C/W
100°C/W
73°C/W
TO (500LF / Min Air Flow)
20LD LCCC (Still Air)
20LD LCCC (500LF / Min Air
Flow)
CLGA (Still Air)
194°C/W
128°C/W
57°C/W
25°C/W
23°C/W
TBD
CLGA (500LF / Min Air Flow)
θJC
TO
20LD LCCC
CLGA
Package Weight (Typical)
ESD Tolerance(3)
TO
20LD LCCC
CLGA
TBD
210mg
4KV
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional. For specifications and test conditions, see the Electrical Characteristics. The specifications apply only for
the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
(2) The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature),
θJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any
temperature is PDmax = (TJmax - TA)/θJA or the number given in the Absolute Maximum Ratings, whichever is lower.
(3) Human body model, 1.5KΩ in series with 100pF.
Quality Conformance Inspection
Table 1. Mil-Std-883, Method 5005 - Group A
Subgroup
Description
Static tests at
Temp °C
25
1
2
Static tests at
125
-55
25
3
Static tests at
4
Dynamic tests at
Dynamic tests at
Dynamic tests at
Functional tests at
Functional tests at
Functional tests at
Switching tests at
Switching tests at
Switching tests at
Settling time at
Settling time at
Settling time at
5
125
-55
25
6
7
8A
8B
9
125
-55
25
10
11
12
13
14
125
-55
25
125
-55
Copyright © 2005–2014, Texas Instruments Incorporated
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LM185-1.2QML
SNVS384B –OCTOBER 2005–REVISED JANUARY 2014
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LM185–1.2 Electrical Characteristics DC Parameters
Sub-
groups
Symbol
VRef
Parameter
Conditions
Notes
Min
Max
Units
Reverse Breakdown Voltage
IR = 10µA
1.223
1.205
1.223
1.205
1.223
1.205
-1.0
1.247
1.26
1.247
1.26
1.247
1.26
1.0
V
V
1
2, 3
1
IR = 20µA
IR = 1mA
V
V
2, 3
1
IR = 20mA
V
V
2, 3
1
ΔVRef / ΔIR Reverse Breakdown Voltage
10µA ≤ IR ≤ 1mA
20µA ≤ IR ≤ 1mA
1mA ≤ IR ≤ 20mA
mV
mV
mV
mV
V
Change with Current
-1.5
1.5
2, 3
1
-10.0
-20.0
-1.0
10.0
20.0
-0.4
2, 3
1
VF
Forward Bias Voltage
IF = 2mA
LM185–1.2 Electrical Characteristics DC Drift Parameters
Delta calculations performed on QMLV devices at group B, subgroup 5, unless otherwise specified on the IPI.
Sub-
groups
Symbol
VR
Parameter
Conditions
Notes
Min
Max
Units
Reverse Breakdown Voltage
IR = 10µA
IR = 20mA
-0.01
-0.01
0.01
0.01
V
V
1
1
LM185BY–1.2 Electrical Characteristics DC Parameters
Sub-
groups
Symbol
VRef
Parameter
Conditions
Notes
Min
Max
Units
Reverse Breakdown Voltage
IR = 10µA
1.223
1.205
1.223
1.205
1.223
1.205
-1.0
1.247
1.26
1.247
1.26
1.247
1.26
1.0
V
V
1
2, 3
1
IR = 20µA
IR = 1mA
V
V
2, 3
1
IR = 20mA
V
V
2, 3
1
ΔVRef / ΔIR
Reverse Breakdown Voltage
Change with Current
10µA ≤ IR ≤ 1mA
20µA ≤ IR ≤ 1mA
1mA ≤ IR ≤ 20mA
mV
mV
mV
mV
V
-1.5
1.5
2, 3
1
-10.0
-20.0
-1.0
10.0
20.0
-0.4
2, 3
1
VF
TC
Forward Bias Voltage
IF = 2mA
(1)
Temperature Coefficient
50
PPM/°C
2, 3
(1) The average temperature coefficient is defined as the maximum deviation of reference voltage, at all measured temperatures between
the operating TMin & TMax, divided by (TMax − TMin). The measured temperatures (TMeasured) are −55°C, 25°C, & 125°C or ΔVRef / (TMax
−
TMin
)
4
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SNVS384B –OCTOBER 2005–REVISED JANUARY 2014
LM185-1.2RLQV SMD 5962R8759461 Post 100 krad Electrical Characteristics DC Parameters(1)(2)
Sub-
groups
Symbol
ΔVRef
Parameter
Conditions
Notes
Min
Max
Units
(3)
(3)
(3)
Change in Reverse Breakdown
Voltage
IR = 10µA
-3
-3
3
3
%
%
1
1
1
1
1
1
IR = 1mA
IR = 20mA
-2.5
-15
-25
-1.0
2.5
15
25
-0.4
%
ΔVRef / ΔIR Reverse Breakdown Voltage
10µA ≤ IR ≤ 1mA
1mA ≤ IR ≤ 20mA
IF = 2mA
mV
mV
V
Change with Current
VF
Forward Bias Voltage
(1) Radiation hardness assured (RHA) products are those with an "RLQV" suffix in the Texas Instruments' part number or those with an "R"
in the SMD number, following "5962".
(2) Testing and qualification for RHA products is done on a wafer level according to MIL-STD-883, Test Method 1019. Testing is performed
with a 1.5X overtest. To be rated at 100 krad(Si) units are tested to 150 krad(Si) with all parameters remaining inside the post 100 krad
Electrical DC test limits in this table. Interim test points are taken at 50, 75 and 100 krad(Si).
(3) Change from the 0 rad reading.
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SNVS384B –OCTOBER 2005–REVISED JANUARY 2014
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Typical Performance Characteristics
Reverse Characteristics
Reverse Characteristics
Figure 4.
Figure 5.
Temperature Drift of 3
Representative Units
Forward Characteristics
Figure 6.
Figure 7.
Reverse Dynamic Impedance
Reverse Dynamic Impedance
Figure 8.
Figure 9.
6
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SNVS384B –OCTOBER 2005–REVISED JANUARY 2014
Typical Performance Characteristics (continued)
Noise Voltage
Filtered Output Noise
Figure 10.
Figure 11.
Response Time
1.25
1.24
1.23
1.22
1.21
1.20
Low Dose Rate Biased
Low Dose Rate Unbiased
0
50
100
150
Radiation Level (krad)
C001
Figure 12.
Figure 13. VRef Radiation Drift at IR = 10 µA
1.25
1.24
1.23
1.22
1.21
1.20
Low Dose Rate Biased
Low Dose Rate Unbiased
0
50
100
150
Radiation Level (krad)
C002
Figure 14. VRef Radiation Drift at IR = 20 mA
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SNVS384B –OCTOBER 2005–REVISED JANUARY 2014
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Typical Applications
Figure 15. Wide Input Range Reference
Figure 16. Micropower Reference from 9V Battery
Figure 17. Reference from 1.5V Battery
*IQ ≃ 30μA
Figure 18. Micropower* 5V Regulator
8
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LM185-1.2QML
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SNVS384B –OCTOBER 2005–REVISED JANUARY 2014
*IQ ≃20μA standby current
Figure 19. Micropower* 10V Reference
Figure 20. Precision 1μA to 1mA Current Sources
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LM185-1.2QML
SNVS384B –OCTOBER 2005–REVISED JANUARY 2014
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METER THERMOMETERS
Calibration
1. Short LM385-1.2, adjust R3 for IOUT= temp at 1μA/°K
2. Remove short, adjust R2 for correct reading in centigrade
†IQ at 1.3V≃500μA
IQ at 1.6V≃2.4mA
Figure 21. 0°C−100°C Thermometer
*2N3638 or 2N2907 select for inverse HFE ≃ 5
†Select for operation at 1.3V
‡IQ ≃ 600μA to 900μA
Figure 22. Lower Power Thermometer
Calibration
1. Short LM385-1.2, adjust R3 for IOUT= temp at 1.8μA/°K
2. Remove short, adjust R2 for correct reading in °F
Figure 23. 0°F−50°F Thermometer
10
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SNVS384B –OCTOBER 2005–REVISED JANUARY 2014
Calibration
1. Adjust R1 so that V1 = temp at 1mV/°K
2. Adjust V2 to 273.2mV
†IQ for 1.3V to 1.6V battery volt-
age = 50μA to 150μA
Typical supply current 50μA
Figure 24. Centigrade Thermometer
Adjustment Procedure
1. Adjust TC ADJ pot until voltage across R1 equals Kelvin temperature multiplied by the thermocouple Seebeck
coefficient.
2. Adjust zero ADJ pot until voltage across R2 equals the thermocouple Seebeck coefficient multiplied by 273.2.
Figure 25. Micropower Thermocouple Cold Junction Compensator
Seebeck
Coefficient
(μV/°C)
Voltage
Across R1
@ 25°C (mV)
Voltage
Across R2
(mV)
Thermocouple
R1
(Ω)
R2
(Ω)
Type
J
T
K
S
52.3
42.8
40.8
6.4
523
432
412
63.4
1.24k
1k
15.60
12.77
12.17
1.908
14.32
11.78
11.17
1.766
953
150
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SNVS384B –OCTOBER 2005–REVISED JANUARY 2014
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REVISION HISTORY SECTION
Released
Revision
Section
Originator
Changes
10/07/05
A
New Release, Corporate format
L. Lytle
2 MDS data sheets converted into one Corp.
data sheet format. MNLM185-1.2-X Rev 2A3
and MNLM185BY-1.2-X Rev 0B0 data sheets
will be archived.
03/27/13
01/07/14
A
B
All
Changed layout of National Data Sheet to TI
format
Features, Electrical Characteristics,
Typical Performance Characteristics
K. Kruckmeyer Added post irradiation test limits and typical
radiation drift plots for radiation qualified option.
12
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PACKAGE OPTION ADDENDUM
www.ti.com
30-Sep-2021
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
5962-8759401XA
5962-8759401YA
ACTIVE
TO
NDU
2
20
Non-RoHS &
Non-Green
Call TI
Call TI
-55 to 125
-55 to 125
8759401XA Q
ACTIVE
CFP
NAC
10
54
Non-RoHS
& Green
Call TI
Level-1-NA-UNLIM
LM185WG
-1.2/883 Q
5962-87594
01YA ACO
01YA >T
5962-8759405XA
5962R8759461VXA
LM185BYH1.2-SMD
LM185H-1.2-SMD
LM185H-1.2/883
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
TO
TO
TO
TO
TO
TO
CFP
NDU
NDU
NDU
NDU
NDU
NDU
NAC
2
2
20
20
20
20
20
20
54
Non-RoHS &
Non-Green
Call TI
Call TI
Call TI
Call TI
Call TI
Call TI
Call TI
Call TI
Call TI
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
8759405XA Q
R8759461VXA Q
8759405XA Q
8759401XA Q
LM185-1.2 Q
Non-RoHS &
Non-Green
2
Non-RoHS &
Non-Green
Call TI
2
Non-RoHS &
Non-Green
Call TI
2
Non-RoHS &
Non-Green
Call TI
LM185H-1.2RLQV
LM185WG-1.2/883
2
Non-RoHS &
Non-Green
Call TI
R8759461VXA Q
10
Non-RoHS
& Green
Level-1-NA-UNLIM
LM185WG
-1.2/883 Q
5962-87594
01YA ACO
01YA >T
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
30-Sep-2021
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF LM185-1.2QML, LM185-1.2QML-SP :
Military : LM185-1.2QML
•
Space : LM185-1.2QML-SP
•
NOTE: Qualified Version Definitions:
Military - QML certified for Military and Defense Applications
•
Space - Radiation tolerant, ceramic packaging and qualified for use in Space-based application
•
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
23-Jun-2023
TRAY
L - Outer tray length without tabs
KO -
Outer
tray
height
W -
Outer
tray
width
Text
P1 - Tray unit pocket pitch
CW - Measurement for tray edge (Y direction) to corner pocket center
CL - Measurement for tray edge (X direction) to corner pocket center
Chamfer on Tray corner indicates Pin 1 orientation of packed units.
*All dimensions are nominal
Device
Package Package Pins SPQ Unit array
Max
matrix temperature
(°C)
L (mm)
W
K0
P1
CL
CW
Name
Type
(mm) (µm) (mm) (mm) (mm)
5962-8759401XA
5962-8759401YA
5962-8759405XA
5962R8759461VXA
LM185BYH1.2-SMD
LM185H-1.2-SMD
LM185H-1.2/883
NDU
NAC
NDU
NDU
NDU
NDU
NDU
NDU
NAC
TO-CAN
CFP
2
10
2
20
54
20
20
20
20
20
20
54
2 X 10
6 X 9
150
100
150
150
150
150
150
150
100
126.49 61.98 10922 11.43 11.81 19.2
101.6 101.6 8001 2.78 16.08 16.08
126.49 61.98 10922 11.43 11.81 19.2
126.49 61.98 10922 11.43 11.81 19.2
126.49 61.98 10922 11.43 11.81 19.2
126.49 61.98 10922 11.43 11.81 19.2
126.49 61.98 10922 11.43 11.81 19.2
126.49 61.98 10922 11.43 11.81 19.2
101.6 101.6 8001 2.78 16.08 16.08
TO-CAN
TO-CAN
TO-CAN
TO-CAN
TO-CAN
TO-CAN
CFP
2 X 10
2 X 10
2 X 10
2 X 10
2 X 10
2 X 10
6 X 9
2
2
2
2
LM185H-1.2RLQV
LM185WG-1.2/883
2
10
Pack Materials-Page 1
PACKAGE OUTLINE
NAC0010A
CFP - 2.33mm max height
S
C
A
L
E
1
.
8
0
0
CERAMIC FLATPACK
LEAD 1 ID
NOTE 3
SUPPLIER OPTION
NOTE 3
.010 .002
[0.25 0.05]
.005 MIN
[0.12]
TYP
10
1
.2410 .0030
[6.121 0.076]
8X .050 .002
[1.27 0.05]
5
6
10X .017 .002
[0.43 0.05]
+.020
-.005
.241
+0.50
-0.12
6.12
[
]
.410 .010
[10.41 0.25]
+.010
.070
-.020
+0.25
SEE DETAIL A
.045 MAX TYP
[1.14]
1.78
[
-0.50
]
.004 [0.1]
.008 .004 TYP
[0.2 0.1]
.006 .002 TYP
[0.15 0.05]
SEATING PLANE
R.015 .002
[0.38 0.05]
.040 .003
[1.02 0.07]
0 -4
DETAIL A
TYPICAL
4215196/D 08/2022
NOTES:
1. All controlling linear dimensions are in inches. Dimensions in brackets are in millimeters. Any dimension in brackets or parenthesis are for
reference only. Dimensioning and tolerancing per ASME Y14.5M.
2. For solder thickness and composition, see the "Lead Finish Composition/Thickness" link in the packaging section of the
Texas Instruments website
3. Lead 1 identification shall be:
a) A notch or other mark within this area
b) A tab on lead 1, either side
4. No JEDEC registration as of December 2021
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EXAMPLE BOARD LAYOUT
NAC0010A
CFP - 2.33mm max height
CERAMIC FLATPACK
(10X .090 )
SYMM
[2.29]
(8X .050 )
[1.27]
(10X .027 )
[0.69]
SYMM
(R.002 ) TYP
[0.05]
(.37 )
[9.4]
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE: 7X
.003 MAX
[0.07]
ALL AROUND
.003 MIN
[0.07]
ALL AROUND
EXPOSED
METAL
EXPOSED
METAL
METAL
SOLDERMASK
OPENING
METAL UNDER
SOLDER MASK
SOLDERMASK
OPENING
SOLDERMASK
DEFINED
NON SOLDERMASK
DEFINED
4215196/D 08/2022
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REVISIONS
REV
A
DESCRIPTION
E.C.N.
DATE
BY/APP'D
RELEASE TO DOCUMENT CONTROL
2197877
2198820
2198845
2200915
12/30/2021
02/14/2022
02/18/2022
08/08/2022
DAVID CHIN / ANIS FAUZI
K. SINCERBOX
B
NO CHANGE TO DRAWING; REVISION FOR YODA RELEASE;
CHANGE PIN 1 ID LOCATION ON PIN
C
D. CHIN / K. SINCERBOX
D. CHIN / K. SINCERBOX
D
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