LM136-2.5 MD8 [TI]

2.5 V 基准二极管 | Y | 0 | -55 to 125;
LM136-2.5 MD8
型号: LM136-2.5 MD8
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

2.5 V 基准二极管 | Y | 0 | -55 to 125

二极管
文件: 总16页 (文件大小:304K)
中文:  中文翻译
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LM136A-2.5QML  
LM136A-2.5QML 2.5V Reference Diode  
Literature Number: SNOSAM3D  
October 26, 2010  
LM136A-2.5QML  
2.5V Reference Diode  
General Description  
The LM136A-2.5QML integrated circuit is a precision 2.5V  
shunt regulator diode. This monolithic IC voltage reference  
operates as a low-temperature-coefficient 2.5V zener with  
Features  
Available with radiation guarantee  
Total Ionizing Dose  
ELDRS Free  
100 krad(Si)  
100 krad(Si)  
0.2Ω dynamic impedance.  
A third terminal on the  
LM136A-2.5QML allows the reference voltage and tempera-  
ture coefficient to be trimmed easily.  
Low temperature coefficient  
Wide operating current of 400 μA to 10 mA  
Guaranteed temperature stability  
Easily trimmed for minimum temperature drift  
Fast turn-on  
The LM136A-2.5QML is useful as a precision 2.5V low volt-  
age reference for digital voltmeters, power supplies or op amp  
circuitry. The 2.5V make it convenient to obtain a stable ref-  
erence from 5V logic supplies. Further, since the  
LM136A-2.5QML operates as a shunt regulator, it can be  
used as either a positive or negative voltage reference.  
3–lead transistor package  
Ordering Information  
NS Part Number  
LM136AH-2.5/883  
SMD Part Number  
NS Package Number  
Package Description  
H03H  
T0-46, 3LD Metal Can  
5962R0050101VXA  
100 krad(Si)  
LM136AH-2.5RQV (Note 6)  
H03H  
H03H  
T0-46, 3LD Metal Can  
LM136AH-2.5RLQV (Note 7)  
ELDRS Free  
5962R0050102VXA  
100 krad(Si)  
T0-46, 3LD Metal Can  
Bare Die  
LM136-2.5 MDE (Note 7)  
ELDRS Free  
5962R0050102V9A  
100 krad(Si)  
(Note 1)  
(Note 1)  
5962R0050101V9A  
100 krad(Si)  
LM136-2.5 MDR (Note 6)  
Bare Die  
Note 1: FOR ADDITIONAL DIE INFORMATION, PLEASE VISIT THE HI REL WEB SITE AT: www.national.com/analog/space/level_die  
Connection Diagram  
TO-46  
Metal Can Package  
20139720  
Bottom View  
See NS Package Number H03H  
© 2010 National Semiconductor Corporation  
201397  
www.national.com  
 
Schematic Diagram  
20139701  
www.national.com  
2
Typical Applications  
2.5V Reference  
20139709  
2.5V Reference with Minimum  
Temperature Coefficient  
20139710  
Adjust to 2.490V  
*Any silicon signal diode  
Wide Input Range Reference  
20139711  
3
www.national.com  
Absolute Maximum Ratings (Note 2)  
Reverse Current  
Forward Current  
15 mA  
10 mA  
Storage Temperature  
−60°C TA +150°C  
−55°C TA +125°C  
+150°C  
Operating Temperature Range (Note 3)  
Maximum Junction Temperature (TJ) (Note 3)  
Lead Temperature (Soldering 10 seconds)  
Thermal Resistance  
ꢀθJA  
300°C  
Still Air Flow  
500LF/Min Air Flow  
354°C/W  
77°C/W  
46°C/W  
ꢀθJC  
ESD Rating (Note 4)  
1,000V  
Quality Conformance Inspection  
Mil-Std-883, Method 5005 - Group A  
Subgroup  
Description  
Static tests at  
Temp°C  
1
2
+25  
+125  
-55  
Static tests at  
3
Static tests at  
4
Dynamic tests at  
Dynamic tests at  
Dynamic tests at  
Functional tests at  
Functional tests at  
Functional tests at  
Switching tests at  
Switching tests at  
Switching tests at  
Settling time at  
Settling time at  
Settling time at  
+25  
+125  
-55  
5
6
7
+25  
+125  
-55  
8A  
8B  
9
+25  
+125  
-55  
10  
11  
12  
13  
14  
+25  
+125  
-55  
www.national.com  
4
LM136A-2.5QML Electrical Characteristics  
DC Parameters  
The following conditions apply, unless otherwise specified. IR = 1mA  
Sub-  
groups  
Symbol  
IAdj  
Parameter  
Adjust Current  
Conditions  
VAdj = 0.7V  
Notes  
Min Max  
Unit  
-125 +125  
6.0  
µA  
mV  
mV  
V
1, 2, 3  
1
ΔVZ  
Delta Zener Voltage  
0.4mA IZ 10 mA  
10  
2, 3  
1
2.465 2.515  
2.44 2.54  
2.39 2.49  
2.29 2.49  
2.49 2.69  
0.6  
VAdj = Open  
V
2, 3  
1
VZ  
V
Zener Voltage  
VAdj = 0.7V  
VAdj = 1.9V  
V
2, 3  
1, 2, 3  
1
V
(Note 5)  
(Note 5)  
ZRD  
Reverse Dynamic Impedance  
Temperature Stability  
1.0  
2, 3  
2, 3  
VStab  
VZ = Adjusted to 2.490V  
18  
mV  
DC Drift Parameters  
Delta calculations are performed on QMLV devices at Group B, Subgroup 5 only.  
Symbol Parameter Conditions  
VAdj = Open  
Sub-  
groups  
Notes  
Min Max  
Unit  
−10 +10  
−10 +10  
−10 +10  
mV  
mV  
mV  
1
1
1
VZ  
VAdj = 0.7V  
VAdj = 1.9V  
Zener Voltage  
Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is  
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed  
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test  
conditions.  
Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (package  
junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax - TA)/  
θ
JA or the number given in the Absolute Maximum Ratings, whichever is lower.  
Note 4: Human body model, 1.5Kin series with 100pF.  
Note 5: Parameter tested go-no-go only.  
Note 6: Pre and post irradiation limits are identical to those listed under DC electrical characteristics. These parts may be dose rate sensitive in a space  
environment and may demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are guaranteed only for the conditions as  
specified in Mil-Std-883, Method 1019.  
Note 7: Low dose rate testing has been performed on a wafer-by-wafer basis, per test method 1019 condition D of MIL-STD-883, with no enhanced low dose  
rate sensitivity (ELDRS) effect.  
5
www.national.com  
 
 
 
 
 
 
Typical Performance Characteristics  
Reverse Voltage Change  
Zener Noise Voltage  
20139722  
20139721  
Dynamic Impedance  
Response Time  
20139724  
20139723  
Reverse Characteristics  
Forward Characteristics  
20139725  
20139726  
www.national.com  
6
Temperature Drift  
20139728  
FIGURE 1. LM136 With Pot for Adjustment  
of Breakdown Voltage  
20139727  
(Trim Range = ±120 mV typical)  
Application Hints  
The LM136 voltage reference is much easier to use than or-  
dinary zener diodes. It's low impedance and wide operating  
current range simplify biasing in almost any circuit. Further,  
either the breakdown voltage or the temperature coefficient  
can be adjusted to optimize circuit performance.  
Figure 1 shows an LM136 with a 10k potentiometer for ad-  
justing the reverse breakdown voltage. With the addition of  
R1 the breakdown voltage can be adjusted without affecting  
the temperature coefficient of the device. The adjustment  
range is usually sufficient to adjust for both the initial device  
tolerance and inaccuracies in buffer circuitry.  
If minimum temperature coefficient is desired, two diodes can  
be added in series with the adjustment potentiometer as  
shown in Figure 2. When the device is adjusted to 2.490V the  
temperature coefficient is minimized. Almost any silicon sig-  
nal diode can be used for this purpose such as a 1N914,  
1N4148 or a 1N457. For proper temperature compensation  
the diodes should be in the same thermal environment as the  
LM136. It is usually sufficient to mount the diodes near the  
LM136 on the printed circuit board. The absolute resistance  
of R1 is not critical and any value from 2k to 20k will work.  
20139729  
FIGURE 2. Temperature Coefficient Adjustment  
(Trim Range = ±70 mV typical)  
Low Cost 2 Amp Switching Regulator†  
20139705  
*L1 60 turns #16 wire on Arnold Core A-254168-2  
Efficiency 80%  
7
www.national.com  
 
 
Precision Power Regulator with Low Temperature Coefficient  
5V Crowbar  
Trimmed 22.501V397R13eference with  
Temperature Coefficient Independent  
of Breakdown Voltage  
20139715  
*Does not affect temperature coefficient  
20139714  
Adjustable Shunt Regulator  
20139706  
www.national.com  
8
Linear Ohmmeter  
20139716  
Op Amp with Output Clamped  
Bipolar Output Reference  
20139717  
20139718  
9
www.national.com  
2.5V Square Wave Calibrator  
20139719  
5V Buffered Reference  
20139730  
Low Noise Buffered Reference  
20139731  
www.national.com  
10  
Revision History  
Date Released  
Revision  
Section  
Changes  
07/06/07  
A
New Release, Corporate format  
2 MDS datasheets converted into one corporate  
datasheet format. MNLM136–2.5–X Rev 0A0 and  
MNLM136A-2.5–X-RH. The ELDRS Part has also  
been added. Rev. 0E0 will be archived.  
10/16/2010  
B
Data Sheet Title, General Description, Order Update with current device information and format.  
Information, Electrical Characteristics,  
Application Hints  
Removed all references to the LM136-2.5 Non “A”  
package NSID no longer offered. Added Die NSID's  
to data sheet. Revision A will be Archived.  
11  
www.national.com  
Physical Dimensions inches (millimeters) unless otherwise noted  
NS Package Number H03H  
www.national.com  
12  
13  
www.national.com  
Notes  
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