LM108AJRQMLV [TI]
LM108/LM108AQML Operational Amplifiers; LM108 / LM108AQML运算放大器
| 型号： | LM108AJRQMLV |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | LM108/LM108AQML Operational Amplifiers |
| 文件： | 总22页 (文件大小：791K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LM108,LM108AQML
LM108/LM108AQML Operational Amplifiers
Literature Number: SNOSAH4A
December 2005
LM108/LM108AQML
Operational Amplifiers
General Description
The LM108 is a precision operational amplifier having speci-
fications a factor of ten better than FET amplifiers over a
−55˚C to +125˚C temperature range.
fact, it operates from 10 MΩ source resistances, introducing
less error than devices like the 709 with 10 kΩ sources.
Integrators with drifts less than 500 µV/sec and analog time
delays in excess of one hour can be made using capacitors
no larger than 1 µF.
The devices operate with supply voltages from 2V to 20V
and have sufficient supply rejection to use unregulated sup-
plies. Although the circuit is interchangeable with, and uses
the same compensation as the LM101A, an alternate com-
pensation scheme can be used to make it particularly insen-
sitive to power supply noise and to make supply bypass
capacitors unnecessary.
Features
n Maximum input bias current of 3.0 nA over temperature
n Offset current less than 400 pA over temperature
n Supply current of only 300 µA, even in saturation
n Guaranteed drift characteristics
The low current error of the LM108 makes possible many
designs that are not practical with conventional amplifiers. In
Ordering Information
NS PART NUMBER
LM108AH/883
SMD PART NUMBER
NS PACKAGE NUMBER
PACKAGE DISCRIPTION
8LD Metal Can
H08C
J08A
LM108AJ-8/883
LM108AJ/883
8LD CERDIP
J14A
14LD CERDIP
LM108AWG/883
LM108AHRQML
WG10A
H08C
10LD Ceramic SOIC
8LD Metal Can
5962R9863702QGA
100k rd(Si)
LM108AHRQMLV
LM108AJ-8RQMLV
LM108AJRQML
5962R9863702VGA
100k rd(Si)
H08C
J08A
8LD Metal Can
8LD CERDIP
5962R9863702VPA
100k rd(Si)
5962R9863702QCA
100k rd(Si)
J14A
14LD CERDIP
LM108AJRQMLV
LM108AWGRQML
LM108AWGRQMLV
LM108AWRQML
LM108AWRQMLV
5962R9863702VCA
100k rd(Si)
J14A
14LD CERDIP
5962R9863702QZA
100k rd(Si)
WG10A
WG10A
W10A
W10A
10LD Ceramic SOIC
10LD Ceramic SOIC
10LD CERPACK
10LD CERPACK
5962R9863702VZA
100k rd(Si)
5962R9863702QHA
100k rd(Si)
5962R9863702VHA
100k rd(Si)
LM108H/883
LM108J/883
LM108J-8/883
H08C
J14A
J08A
8LD Metal Can
14LD CERDIP
8LD CERDIP
© 2005 National Semiconductor Corporation
DS201206
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Connection Diagrams
Metal Can Package
14 Lead Dual-In-Line Package
20120616
20120613
−
Top View
*Package is connected to Pin 4 (V )
See NS Package Number J14A
**Unused pin (no internal connection) to allow for input anti-leakage guard
ring on printed circuit board layout.
See NS Package Number H08C
8 Lead Dual-In-Line Package
10 Lead Flatpack/SOIC Package
20120617
Top View
See NS Package Number W10A, WG10A
20120615
Top View
See NS Package Number J08A
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2
Schematic Diagram
20120608
3
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Compensation Circuits
Alternate Frequency Compensation
Standard Compensation Circuit
(Note 1)
20120601
20120602
**Bandwidth and slew rate are proportional to 1/C
S
C
= 30 pF
O
**Bandwidth and slew rate are proportional to 1/C
f
Note 1: Improves rejection of power supply noise by a factor of ten.
Feedforward Compensation
20120603
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4
Absolute Maximum Ratings (Notes 2, 3)
LM108RH
LM108/LM108A
Supply Voltage
22V
20V
Power Dissipation (Note 4)
Metal Can 8 LD
@
330mW +125˚C
@
400mW +125˚C
CERDIP 14LD
@
400mW +125˚C
CERDIP 8LD
@
330mW +125˚C
CERPACK 10LD
@
Ceramic SOIC 10 LD
Differential Input Current (Note 5)
Differential Input Voltage(Note 7)
Input Voltage (Note 6)
Output Short-Circuit Duration
Operating Temperature Range
Storage Temperature Range
Thermal Resistance
330mW +125˚C
10 mA
30V
N/A
15V
20V
Continuous
−55˚C ≤ TA ≤ +125˚C
−65˚C ≤ TA ≤ +150˚C
θJA
Metal Can 8 LD
Still Air
150˚C/W
86˚C/W
94˚C/W
55˚C/W
120˚C/W
68˚C/W
225˚C/W
142˚C/W
225˚C/W
142˚C/W
500LF / Min Air Flow
CERDIP 14LD Still Air
500LF / Min Air Flow
CERDIP 8LD Still Air
500LF / Min Air Flow
CERPACK 10LD Still Air
500LF / Min Air Flow
Ceramic SOIC
10 LD
Still Air
500LF / Min Air Flow
θJC
Metal Can 8 LD
CERDIP 14LD
38˚C/W
13˚C/W
17˚C/W
21˚C/W
21˚C/W
CERDIP 8LD
CERPACK 10LD
Ceramic SOIC 10 LD
Package Weight (typical)
Metal Can
8 LD
990mg
2,180mg
1,090mg
225mg
210mg
175˚C
CERDIP 14LD
CERDIP 8LD
CERPACK 10LD
Ceramic SOIC
10 LD
Maximum Junction Teperature
150˚C
Lead Temperature (Soldering, 10 sec)
ESD Tolerance (Note 8)
300˚C
2000V
5
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Quality Conformance Inspection
Mil-Std-883, Method 5005 - Group A
Subgroup
Description
Static tests at
Temp (˚C)
+25˚C
1
2
Static tests at
+125˚C
−55˚C
3
Static tests at
4
Dynamic tests at
Dynamic tests at
Dynamic tests at
Functional tests at
Functional tests at
Functional tests at
Switching tests at
Switching tests at
Switching tests at
+25˚C
5
+125˚C
−55˚C
6
7
+25˚C
8A
8B
9
+125˚C
−55˚C
+25˚C
10
11
+125˚C
−55˚C
LM108 Electrical Characteristics
DC Parameters
The following conditions apply to all the following parameters, unless otherwise specified.
VCC
Symbol
VIO
=
20V, VCM = 0V
Parameter
Sub-
groups
Conditions
VCM = -15V
Notes
Min Max
Units
Input Offset Voltage
Input Offset Current
Input Bias Current
-2.0
-3.0
-2.0
-3.0
-2.0
-3.0
-2.0
-3.0
-0.2
-0.4
-0.2
-0.4
-0.2
-0.4
-0.2
-0.4
-0.1
-1.0
2.0
3.0
2.0
3.0
2.0
3.0
2,0
3.0
0.2
0.4
0.2
0.4
0.2
0.4
0.2
0.4
2.0
3.0
mV
mV
mV
mV
mV
mV
mV
mV
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
dB
1
2, 3
1
VCM = 15V
2, 3
1
2, 3
1
VCC = 5V
VCM = -15V
VCM = 15V
2, 3
1
IIO
2, 3
1
2, 3
1
2, 3
1
VCC
=
5V
2, 3
1
IIB
VCM = -15V
VCM = 15V
2,
−0.1 3.0
3
-0.1
-1.0
2.0
3.0
1
2,
−0.1 3.0
3
-0.1
-1.0
2.0
3.0
1
2,
−0.1 3.0
3
VCC
=
5V
-0.1
-1.0
2.0
3.0
1
2,
−0.1 3.0
80
3
<
<
=
PSRR
Power Supply Rejection Ratio
20V = Vcc
5V
1, 2, 3
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6
LM108 Electrical Characteristics (Continued)
DC Parameters (Continued)
The following conditions apply to all the following parameters, unless otherwise specified.
VCC
Symbol
CMRR
=
20V, VCM = 0V
Parameter
Common Mode Rejection Ratio -15V = VCM = 15V
Sub-
groups
Conditions
Notes
Min Max
85
Units
dB
<
<
1, 2, 3
+IOS
-IOS
ICC
Short Circuit Current
Short Circuit Current
Power Supply Current
VCC
VCC
=
=
15V
15V
-30
1
-1.0
30
mA
mA
mA
mA
mA
MΩ
V
1, 2, 3
1, 2, 3
1
0.6
0.4
0.8
2
3
RIN
VIN
Input Resistance
(Note 13) 30
(Note 12) 14
(Note 12)
1
Input Voltage Range
VCC
=
15V
1, 2
1, 2
3
−14
V
(Note 12) 13.5
(Note 12)
V
−13.5 V
V
3
(Note 12) 15
(Note 12)
1, 2, 3
1, 2, 3
4, 5, 6
4, 5, 6
4
−15
V
+VOP
-VOP
+AVS
Output Voltage Swing
Output Voltage Swing
Open Loop Voltage Gain
VCC
VCC
VCC
=
=
=
15V, RL = 10KΩ
15V, RL = 10KΩ
15V, RL = 10KΩ,
13
V
-13
V
(Note 10) 50
(Note 10) 25
(Note 10) 50
(Note 10) 25
V/mV
V/mV
V/mV
V/mV
Vout = 0 to 10V
VCC 15V, RL = 10KΩ
Vout = 0 to -10V
5, 6
4
-AVS
Open Loop Voltage Gain
=
5, 6
AC Parameters
The following conditions apply to all the following parameters, unless otherwise specified.
VCC 20V, VCM = 0V.
=
Sub-
groups
Symbol
Parameter
Conditions
Notes
Min Max
Units
TRTR
TROS
Rise Time
Overshoot
(Note 13)
(Note 13)
1.0
30
µS
%
7
7
7
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LM108A Electrical Characteristics
DC Parameters
The following conditions apply to all the following parameters, unless otherwise specified.
VCC
Symbol
VIO
=
20V, VCM = 0V
Parameter
Sub-
groups
Conditions
VCM = -15V
Notes
Min Max
Units
mV
Input Offset Voltage
Input Offset Current
Input Bias Current
-0.5
-1.0
-0.5
-1.0
-0.5
-1.0
-0.5
-1.0
-0.2
-0.4
-0.2
-0.4
-0.2
-0.4
-0.2
-0.4
-0.1
-1.0
-0.1
-0.1
-1.0
-0.1
-0.1
-1.0
-0.1
-0.1
-1.0
-0.1
96
0.5
1.0
0.5
1.0
0.5
1.0
0.5
1.0
0.2
0.4
0.2
0.4
0.2
0.4
0.2
0.4
2.0
3.0
3.0
2.0
3.0
3.0
2.0
3.0
3.0
2.0
3.0
3.0
1
mV
mV
mV
mV
mV
mV
mV
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
dB
dB
mA
mA
mA
mA
mA
MΩ
V
2, 3
VCM = 15V
1
2, 3
1
2, 3
VCC = 5V
VCM = -15V
VCM = 15V
1
2, 3
IIO
1
2, 3
1
2, 3
1
2, 3
VCC
=
5V
1
2, 3
IIB
VCM = -15V
VCM = 15V
1
2
3
1
2
3
1
2
3
VCC
=
5V
1
2
3
<
<
=
PSRR
CMRR
+IOS
-IOS
Power Supply Rejection Ratio
20V = VCC
5V
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1
<
<
Common Mode Rejection Ratio -15V = VCM = 15V
96
Short Circuit Current
Short Circuit Current
Power Supply Current
VCC
VCC
=
=
15V
15V
-30
-1.0
30
1.0
ICC
0.6
0.4
0.8
2
3
RIN
VIN
Input Resistance
(Note 13) 30
(Note 12) 14
(Note 12)
1
Input Voltage Range
VCC
=
15V
1, 2
1, 2
3
−14
V
(Note 12) 13.5
(Note 12)
V
−13.5 V
V
3
(Note 12) 15
(Note 12)
1, 2, 3
1, 2, 3
1, 2, 3
−15
5.0
V
Delta VIO
Delta T
/
Temperature Coefficient of
Input Offset Voltage
(Note 13)
µV/˚C
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8
LM108A Electrical Characteristics (Continued)
DC Parameters (Continued)
The following conditions apply to all the following parameters, unless otherwise specified.
VCC
Symbol
Delta I
=
20V, VCM = 0V
Parameter
Sub-
groups
Conditions
Notes
Min Max
Units
pA/˚C
/
Temperature Coefficient of
Input Offset Current
(Note 13)
2.5
1, 2, 3
IO
Delta T
+VOP
-VOP
Output Voltage Swing
Output Voltage Swing
Open Loop Voltage Gain
VCC
VCC
VCC
=
=
=
15V, RL = 10KΩ
15V, RL = 10KΩ
15V, RL = 10KΩ,
13
V
4, 5, 6
4, 5, 6
4
-13
V
+AVS
(Note 10) 80
(Note 10) 40
(Note 10) 80
(Note 10) 40
V/mV
V/mV
V/mV
V/mV
Vout = 0 to 10V
VCC 15V, RL = 10KΩ,
Vout = 0 to -10V
5, 6
4
-AVS
Open Loop Voltage Gain
=
5, 6
AC Parameters
The following conditions apply to all the following parameters, unless otherwise specified.
VCC 20V, VCM = 0V
=
Sub-
groups
Symbol
TRTR
Parameter
Transient Response Rise Time
Conditions
Notes
Min Max
Units
µS
(Note 13)
1.0
7
9
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LM108A Rad Hard — Electrical Characteristics
DC Parameters
The following conditions apply to all the following parameters, unless otherwise specified.
VCC
=
20V, VCM = 0V, RS = 50Ω
Sub-
Symbol
Parameter
Conditions
Notes
Min Max
0.5 mV
1.0 mV
Units
groups
-0.5
-1.0
-0.5
-1.0
-0.5
-1.0
-0.5
-1.0
-5.0
-5.0
-0.2
-0.4
-0.2
-0.4
-0.2
-0.4
-0.2
-0.4
-2.5
-2.5
-0.1
-1.0
-0.1
-0.1
-1.0
-0.1
-0.1
-1.0
-0.1
-0.1
-1.0
-0.1
-16
1
+VCC = 35V, -VCC = -5V,
VCM = -15V
2, 3
+VCC = 5V, -VCC = -35V,
VCM = 15V
0.5 mV
1.0 mV
0.5 mV
1.0 mV
0.5 mV
1.0 mV
5.0 µV/˚C
5.0 µV/˚C
0.2 nA
0.4 nA
0.2 nA
0.4 nA
0.2 nA
0.4 nA
0.2 nA
0.4 nA
2.5 pA/˚C
2.5 pA/˚C
2.0 nA
2.0 nA
3.0 nA
2.0 nA
2.0 nA
3.0 nA
2.0 nA
2.0 nA
3.0 nA
2.0 nA
2.0 nA
3.0 nA
16 µV/V
16 µV/V
dB
1
2, 3
VIO
Input Offset Voltage
1
2, 3
+VCC = +5V, -VCC = -5V
1
2, 3
Delta VIO
Delta T
/
Temperature Coefficient of
Input Offset Voltage
25˚C ≤ TA ≤ +125˚C
-55˚C ≤ TA ≤ 25˚C
+VCC = 35V, -VCC = -5V,
VCM = -15V
(Note 9)
(Note 9)
2
3
IIO
Input Offset Current
1
2, 3
+VCC = 5V, -VCC = -35V,
VCM = 15V
1
2, 3
1
2, 3
+VCC = +5V, -VCC = -5V
1
2, 3
Delta I
/
Temperature Coefficient of
Input Offset Current
25˚C ≤ TA ≤ +125˚C
-55˚C ≤ TA ≤ 25˚C
+VCC = 35V, -VCC = -5V,
VCM = -15V
(Note 9)
(Note 9)
2
IO
Delta T
3
IIB
Input Bias Current
1
2
3
+VCC = 5V, -VCC = -35V,
VCM = 15V
1
2
3
1
2
3
+VCC = +5V, -VCC = -5V
1
2
3
+PSRR
-PSRR
CMRR
+IOS
Power Supply Rejection Ratio
Power Supply Rejection Ratio
+VCC = 10V, -VCC = -20V
+VCC = 20V, -VCC = -10V
1, 2, 3
1, 2, 3
1, 2, 3
-16
Common Mode Rejection Ratio VCM
=
15V
96
Short Circuit Current
Short Circuit Current
Power Supply Current
+VCC = +15V,
-VCC = -15V, t ≤ 25mS
+VCC = +15V,
-20
mA
1, 2, 3
-IOS
ICC
-VCC = -15V, t ≤ 25mS
20 mA
0.6 mA
0.8 mA
V
1, 2, 3
1, 2
3
+VCC = +15V,
-VCC = -15V
+VOP
-VOP
+AVS
Output Voltage Swing
Output Voltage Swing
Open Loop Voltage Gain
RL = 10KΩ
16
4, 5, 6
4, 5, 6
4
RL = 10KΩ
-16
V
RL = 10KΩ, Vout = +15V
(Note 10)
(Note 10)
80
40
V/mV
V/mV
5, 6
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10
LM108A Rad Hard — Electrical Characteristics (Continued)
DC Parameters (Continued)
The following conditions apply to all the following parameters, unless otherwise specified.
VCC
=
20V, VCM = 0V, RS = 50Ω
Sub-
Symbol
-AVS
Parameter
Conditions
Notes
(Note 10)
(Note 10)
Min Max
Units
V/mV
V/mV
groups
Open Loop Voltage Gain
RL = 10KΩ, Vout = -15V
80
40
4
5, 6
AVS
Open Loop Voltage Gain
VCC
=
5V, RL = 10KΩ,
(Note 10)
20
V/mV
4, 5, 6
Vout = 2V
DC Drift Parameters
The following conditions apply to all the following parameters, unless otherwise specified.
VCC 20V, VCM = 0V, RS = 50Ω
Delta calculations performed on JAN S and QMLV devices at group B, subgroup 5 only.
=
Sub-
Symbol
VIO
IIB
Parameter
Input Offset Voltage
Input Bias Current
Conditions
Notes
Min Max
Units
groups
-0.25 0.25 mV
-0.5 0.5 nA
1
1
AC Parameters
The following conditions apply to all the following parameters, unless otherwise specified.
AC
Symbol
TRTR
VCC
=
20V, VCM = 0V, RS = 50Ω
Sub-
groups
Parameter
Conditions
Notes
Min Max
1,000 nS
50
Units
RL = 10KΩ, CL = 100pF,
Transient Response Rise Time
<
f
1KHz, Vin = +50mV
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9
TROS
+SR
Transient Response Overshoot RL = 10KΩ, CL = 100pF,
<
f
1KHz, Vin = +50mV
%
Slew Rate
AV = 1,
VIN = -5V to +5V
AV = 1,
0.05
0.05
V/µS
V/µS
−SR
Slew Rate
VIN = +5V to -5V
BW = 10Hz to 5KHz,
RS = 0 Ω
NIBB
NIPC
Noise Broadband
Noise Popcorn
15 µVRMS
40 µVPK
BW = 10Hz to 5KHz,
RS= 100KΩ
9
@
Post Radiation Parameters
+25˚C (Note 11)
The following conditions apply to all the following parameters, unless otherwise specified.
DC:
VCC
=
20V, VCM = 0V, RS = 50Ω
Sub-
Symbol
Parameter
Conditions
+VCC = 35V, -VCC = -5V,
VCM = -15V
Notes
Min Max
Units
groups
(Note 11)
5.0 nA
1
+VCC = 5V, -VCC = -35V,
VCM = -15V
IIB
Input Bias Current
(Note 11)
(Note 11)
(Note 11)
5.0 nA
5.0 nA
5.0 nA
1
1
1
+VCC = +5V, -VCC = -5V
11
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LM108A Rad Hard — Electrical Characteristics (Continued)
@
Post Radiation Parameters
+25˚C (Note 11) (Continued)
The following conditions apply to all the following parameters, unless otherwise specified.
DC:
VCC
=
20V, VCM = 0V, RS = 50Ω
Sub-
Symbol
Parameter
Conditions
+VCC = 35V, -VCC = -5V,
VCM = -15V
Notes
Min Max
Units
groups
IIO
Input Offset Current
(Note 11)
0.5 nA
1
+VCC = 5V, -VCC = -35V,
VCM = -15V
(Note 11)
(Note 11)
(Note 11)
0.5 nA
0.5 nA
0.5 nA
1
1
1
+VCC = +5V, -VCC = -5V
Note 2: Parameters have only been entered in the LM108 / LM108A column if different from LM108RH
Note 3: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 4: The maximum power dissipation must be derated at elevated temperatures and is dictated by T max (maximum junction temperature), θ (package
J
JA
junction to ambient thermal resistance), and T (ambient temperature). The maximum allowable power dissipation at any temperature is P max = (T max - T ) /θ
A
D
J
A
JA
or the number given in the Absolute Maximum Ratings, whichever is lower.
Note 5: The inputs are shunted with back-to-back diodes for over voltage protection. Therefore, excessive current will flow if a differential input voltage in excess
of 1V is applied between the inputs unless some limiting resistance is used.
Note 6: For supply voltages less than 20V, the absolute maximum input voltage is equal to the supply voltage.
Note 7: This rating is 1.0V unless resistances of 2K Ohms or greater are inserted in series with the inputs to limit current in the input shunt diodes to the maximum
allowable value..
Note 8: Human body model, 1.5 kΩ in series with 100 pF.
Note 9: Calculated parameter
Note 10: Datalog reading in K = V/mV
Note 11: Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table.
These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters
are guaranteed only for the conditions as specified in MIL-STD-883, Method 1019.5.
Note 12: Parameter tested Go-No-Go
Note 13: Guaranteed parameter not tested.
Note 14: Calculated parameter for Class “S” only
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12
Typical Performance Characteristics
Input Currents
Offset Error
20120618
20120619
Drift Error
Input Noise Voltage
20120620
20120621
Closed Loop
Power Supply Rejection
Output Impedance
20120623
20120622
Voltage Gain
Output Swing
20120624
20120625
13
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Typical Performance Characteristics (Continued)
Open Loop
Supply Current
Frequency Response
20120626
20120627
Large Signal
Frequency Response
Voltage Follower
Pulse Response
20120628
20120629
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14
Typical Applications
Sample and Hold
20120604
†
Teflon polyethylene or polycarbonate dielectric capacitor
Worst case drift less than 2.5 mV/sec
High Speed Amplifier with Low Drift and Low Input Current
20120605
15
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Typical Applications (Continued)
Fast Summing Amplifier (Note 15)
20120612
*In addition to increasing speed, the LM101A raises high and low frequency gain, increases output drive capability and eliminates thermal feedback.
Note 15: Power Bandwidth: 250 KHz
Small Signal Bandwidth: 3.5 MHz
Slew Rate: 10V/µS
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16
Revision History
Date
Revision
Section
Originator
Changes
Released
03/23/05
A
New release, corporate format.
Ordering information table, Electrical
sections for the LM108 and
LM108A.
L. Lytle
3 MDS data sheets converted into one
Corp. datasheet format. MRLM108A-X-RH
rev. 1A0, MNLM108A-X rev 1A1,
MNLM108–X rev 0BL. Deleted following:
NSID LM108AW/883 and
LM108AJ-8RQML, no longer offered; from
LM108 electrical’s Delta VIO/Delta T, Delta
IIO/Delta T, Drift Parameters; from
LM108A electrical’s Drift Parameters.
Reason: referenced products are 883
only.
12/14/05
B
Rad Hard Electricals, DC
Parameters
R. Malone
+IOS from -15 mA min to -20 mA min and
-IOS from +15 mA max to +20 mA max.
Reason: To reflect SMD update. Revision
A will be archived.
17
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Physical Dimensions inches (millimeters) unless otherwise noted
Ceramic Dual-In-Line Package (J)
NS Package Number J08A
Ceramic Dual-In-Line Package (J)
NS Package Number J14A
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18
Physical Dimensions inches (millimeters) unless otherwise noted (Continued)
Metal Can Package (H)
NS Package Number H08C
S.O. Package (WG)
NS Package Number WG10A
19
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Physical Dimensions inches (millimeters) unless otherwise noted (Continued)
Ceramic Flatpack Package (W)
NS Package Number W10A
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