LFC789D25CPWG4 [TI]

SPECIALTY ANALOG CIRCUIT, PDSO8, GREEN, PLASTIC, TSSOP-8;


型号：	LFC789D25CPWG4
厂家：	TEXAS INSTRUMENTS
描述：	SPECIALTY ANALOG CIRCUIT, PDSO8, GREEN, PLASTIC, TSSOP-8 光电二极管
文件：	总14页 (文件大小：542K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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ꢆꢉꢊ ꢀ ꢀ ꢋꢌꢍ ꢊꢎ ꢁ ꢍꢏ ꢂꢐ ꢌꢏꢎ ꢐ ꢀꢀ ꢍꢎ

SLLS565B − MARCH 2003 − REVISED SEPTEMBER 2004

D OR PW PACKAGE

(TOP VIEW)

Two Independent Controllers for

Regulation of:

− Fixed 2.5-V and an Adjustable Output

DRV_V

SEN_V

ADJ

−

2% (Max) Regulation Across

DRV_V

SEN_V

Temperature and Load (1 mA to 3 A)

REF

GND

Adjustable Output Can Be Set Via an

External Reference Pin, Allowing for the

Creation of a Tracking Regulator

NC − No internal connection

Great Design Flexibility With Minimal

External Components

Applications: High-Current, Low-Dropout

Regulators for:

− DDR/RDRAM Memory Termination

− Motherboards

− Chipset I/O

− GTLP Termination

description/ordering information

The LFC789D25 is a dual linear FET controller that simplifies the design of dual power supplies. The device

consists of two independent controllers, each of which drives an external MOSFET to implement a low-dropout

regulator. One controller is programmed to regulate a fixed 2.5-V output, while the second controller can be

programmed to regulate any desired output voltage via a reference input pin, allowing for the creation of a

tracking regulator often needed for termination schemes. And, because heating effects of the external FETs

easily can be isolated from the controllers, the controllers can regulate the output voltages to a maximum

tolerance of 2% across temperature and load.

The LFC789D25 allows designers a great deal of flexibility in selecting external components and topology to

implement their specific power-supply needs. With appropriate heat sinking, the designer can build a regulator

with as much current capability as allowed by the external MOSFET and power supply. And, because the

dropout of the regulator simply is the product of the R

very low dropout can be achieved via proper selection of the power MOSFET.

of the external power MOSFET and the load current,

DS(on)

Packaged in 8-pin SOIC and space-saving TSSOP, the LFC789D25 is characterized for operation from 0°C to

70°C.

ORDERING INFORMATION

ORDERABLE

PART NUMBER

TOP-SIDE

MARKING

†

PACKAGE

Tube of 75

Reel of 2500 LFC789D25CDR

Tube of 150 LFC789D25CPW

Reel of 2000 LFC789D25CPWR

LFC789D25CD

SOIC (D)

KADAC

0°C to 70°C

TSSOP (PW)

KADAC

†

Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines

are available at www.ti.com/sc/package.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

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SLLS565B − MARCH 2003 − REVISED SEPTEMBER 2004

functional block diagram

DRV_V

ADJ

SEN_V

ADJ

REF

Bandgap

Reference

DRV_V

SEN_V

4 kΩ

3.6 kΩ

GND

PIN DESCRIPTION

PIN FUNCTION

Output of adjustable controller. Drives gate(s) of FET(s) to output user-programmable voltage (V

PIN NAME

DRV_V

ADJ

SEN_V

Sense input of adjustable controller. Senses changes in V

ADJ.

ADJ

REF

Input pin used to program V , allowing V

ADJ ADJ

to track changes in V

REF

GND

Ground

No connection

SEN_V

Sense Input of 2.5-V controller. Senses changes in 2.5-V supply.

DRV_V

Output of 2.5-V controller. Drives gate(s) of FET(s) to output fixed 2.5 V.

Power supply for device

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

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SLLS565B − MARCH 2003 − REVISED SEPTEMBER 2004

(12V)

PWR

(3.3V)

LFC789D25

22 µF

DRV_V

ADJ

DRV_V

REF

1.25 V

DDQ

2.5 V

0.1 µF

100 µF

SEN_V

ADJ

SEN_V

REF

0.1 µF

GND

†

R1 = R2 = 100 Ω (0.1% matched resistors)

Figure 1. Typical Application Circuit for DDR1 − Memory Voltage (V

) and V

Buffer for DIMMs

REF

DDQ

‡

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)

Supply voltage, V

Input voltage range, V

(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V

, SEN_V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 18 V

REF

ADJ

Package thermal impedance, θ (see Notes 2 and 3): D package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97°C/W

PW package . . . . . . . . . . . . . . . . . . . . . . . . . 149°C/W

Operating virtual junction temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C

Storage temperature range, T

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C

stg

‡

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. All voltage values are with respect to the network ground terminal.

2. Maximum power dissipation is a function of T (max), θ , and T . The maximum allowable power dissipation at any allowable

ambient temperature is P = (T (max) − T )/θ . Operating at the absolute maximum T of 150°C can impact reliability.

3. The package thermal impedance is calculated in accordance with JESD 51-7.

recommended operating conditions

MIN

MAX

UNIT

Supply voltage

Operating free-air temperature

°C

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SLLS565B − MARCH 2003 − REVISED SEPTEMBER 2004

electrical characteristics, V

= 12 V 5%, T = 25°C (unless otherwise noted)

PARAMETER

MIN

TYP

MAX

−500

500

UNIT

TEST CONDITIONS

−20

I_{SEN_V}

ADJ

sense-pin current

ADJ

Full range

Sense

125

I_{SEN_V}

sense-pin current

= 2.5 V

µA

− 1.5

Driver output voltage

Driver output current

= 0

DRV

Full range

− 3

Driver

= 4 V,

= 0.8 V

OUT

DRV

SEN

DRV

(nom)

−20

−250

−500

I_VREF

Reference

Pin current, V

REF

2.5

output voltage

= 1 mA to 3 A,

= 3 .3 V 10%

regulation

OUT

2.45

2.55

PWR

Output regulation

(see Figure 1)

REF

= 1 mA to 2 A,

= 3.3 V 10%,

OUT

PWR

output voltage

ADJ

0.98 ×

1.02 ×

regulation

Full range

REF

= V /2

REF

Supply

Supply current

2.5

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SLLS565B − MARCH 2003 − REVISED SEPTEMBER 2004

APPLICATION INFORMATION

FUNCTIONAL DESCRIPTION

A linear voltage regulator can be broken down into four essential building blocks: a pass transistor, a voltage

reference, a feedback network, and a control circuit to drive the pass element, based on the comparison

between the output voltage (as sampled by the feedback network) and the voltage reference. With the exception

of the pass transistor, the -ADJ provides the other three building blocks needed. Thus, with minimal external

components and low overall solution cost, a designer can create two independent, tightly regulated output

voltages capable of delivering high currents in excess of 3 A (as limited by the external pass transistor). One

output is fixed at 2.5 V. The other output can be adjusted to any desired voltage via an externally applied signal

to the V

pin. Because the output of the regulator always tracks any changes to this V

pin, it is relatively

REF

easy to implement a tracking regulator. See the typical application circuit (Figure 1).

internal reference

The fixed 2.5-V output controller uses an internal temperature-compensated bandgap reference centered at

1.2 V. Its tolerance is designed to be < 2% over the specified temperature range, which, when coupled with the

low offset of the driver circuit, allows the 2.5-V output to have a tolerance of 2% over the specified temperature

range and full load.

external reference pin (V

)

REF

For the adjustable output controller, the V

divider tied to an external voltage source and connecting the divider to the V

pin allows great flexibility for the designer. Taking a simple resistor

REF

pin allows the controller to

REF

regulate an output voltage that is some fraction of the external voltage source. And, because any changes in

the external voltage source are sensed by the voltage divider, the regulated output tracks those changes.

If a tracking regulator is not desired, a fixed voltage can be achieved by applying a constant voltage to the V

pin. This signal can be provided by a simple device such as the TL431 adjustable shunt regulator.

REF

The V

pin typically sources a current of 20 nA and, as such, has a minimal loading effect on the resistor

REF

divider or the shunt regulator. The accuracy of the adjustable output depends on the accuracy of the signal

applied to the V

accuracy.

pin. Using high-precision resistors or a TL431A (1% output tolerance) helps achieve good

REF

feedback network (SENSE pins)

The 2.5-V controller senses the output voltage via the SEN_V pin. This pin is tied to an internal resistor divider

that essentially halves the sensed output voltage and feeds it back to the controller for comparison to the internal

bandgap reference.

For the adjustable output controller, the SEN_V

controller for comparison to the externally applied V

pin provides direct feedback of the output voltage to the

ADJ

signal.

REF

controller/driver

Both drivers essentially are error amplifiers that can output a worst-case minimum of 9 V (10.5 V at 25°C) when

the LFC789D25 is powered by 12 V. This allows the controllers to regulate a large range of output

voltages, as limited by the threshold voltages of the external NMOS. Both drivers sample the output voltage via

a SEN pin. For the adjustable version, this SEN pin typically sources a current of 20 nA and, thus, has minimal

loading on the output voltage. For the 2.5-V version, this SEN pin sinks a current of approximately 125 µA

(including the currents through the internal resistor divider); this results in minimal loading on the output voltage.

Although not tested, both of these controllers are designed with very low offset (typically less than 4 mV),

resulting in very accurate control of the drive signals.

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SLLS565B − MARCH 2003 − REVISED SEPTEMBER 2004

APPLICATION INFORMATION

MOSFET SELECTION: BENEFITS OF NMOS PASS ELEMENTS REVISITED

A great benefit of having an external pass element is that the control circuitry can be powered by a separate

supply (V ), other than the one used as the input to the pass element (V

). This feature allows the use of

PWR

an NMOS pass element, which requires a positive V

> V for operation. With a separate V

pin to the

easily can

controller, the voltage at the gate of the NMOS readily can exceed the voltage at the drain; thus, V

exceed V + V , allowing the NMOS to operate in the triode region (V ≥ V − V ). In the triode region, V

can be very small, thus achieving very low dropout.

The external NMOS selected for the pass transistor has significant impact on the overall characteristics of the

regulator, as discussed in the following paragraphs.

Maximum output current

A benefit of an external pass element is that the designer can size the NMOS to easily sustain the maximum

expected. This allows great flexibility, along with cost and space savings, because each regulator has its

OUT

pass element tailored to its individual needs. In addition, using an NMOS pass element allows for smaller size

(and subsequently, lower cost) than a PMOS element for the same current-carrying ability.

Dropout

Choosing an NMOS with very low R

dropout will be ∼I

in the pass element for a given I

characteristics provides the regulator with very low dropout because

. This lower dropout also results in better efficiency and lower heat dissipation

DS(on)

× R

OUT

DS(on)

OUT

Maximum programmable output voltage and NMOS threshold voltage, V

The maximum output voltage that can be regulated by the programmable regulator depends on the device’s

power supply (V ) and threshold voltage (V ) of the NMOS. With the drive voltage tied to the gate and V

connected to the source of the NMOS, a minimum V

OUT

= V must be maintained in order to maintain the

is calculated as follows:

n-channel inversion layer. The maximum V

OUT

= V = V − V

S G T

OUT

With V

= 12 V and a corresponding worst-case gate drive voltage of 9 V, the highest achievable

= 9 V − V .

OUT

Stability

A quality of the old npn regulators was their inherent stability under almost any type of load conditions and output

capacitors. An NMOS regulator has the same benefit. Thus, capacitor selection and

equivalent-series-resistance (ESR) values are not needed for stability, but still should be chosen properly for

best transient response (see below).

capacitor selection

: Although a minimum capacitance is not needed for stability with an NMOS pass device, higher capacitance

out

values improve transient response. In addition, low-ESR capacitors also help transient response. Tantalum or

aluminum electrolytics can be used for bulk capacitances, while ceramic bypass capacitors can be used to

decouple high-frequency transients due to their low ESL (equivalent series inductance).

C : Input capacitors placed at the drain of the NMOS pass transistor (V

) help improve the overall transient

PWR

response by suppressing surges in V

during fast load changes. Low-ESR tantalum or aluminum electrolytic

PWR

capacitors can be used; higher capacitance values improve transient response. A 0.1-µF ceramic capacitor can

be placed at the V

pin of the LFC789D25 to provide bypassing.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

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SLLS565B − MARCH 2003 − REVISED SEPTEMBER 2004

APPLICATION INFORMATION

layout

Another benefit of a separate controller and pass element is that the heat dissipated in the external NMOS can

be well isolated from the controller, which has very low power dissipation. Both of these factors allow the

bandgap reference and control circuitry to operate over a more stable temperature range, resulting in very good

accuracy over full-load conditions. The LFC789D25 should be placed as close as possible to the external pass

element because short PCB traces allow minimal EMI coupling to both the drive and sense lines.

For best accuracy, connect the SEN pins as close to the load as possible, not to the source of the NMOS. Also,

place the SEN trace in the same direction and plane as the power trace that connects the source of the NMOS

to the load. Also, it is good practice to keep the load current return path as far as possible from the SEN trace.

Place the 0.1-µF bypass capacitor as close as possible to the V

pin and connect it directly to the ground plane.

The GND pin of the LFC789D25 should be connected to the ground plane.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

PACKAGE OPTION ADDENDUM

www.ti.com

10-Jun-2014

PACKAGING INFORMATION

Orderable Device

LFC789D25CD

Status Package Type Package Pins Package

Eco Plan

Lead/Ball Finish

MSL Peak Temp

Op Temp (°C)

0 to 70

Device Marking

Samples

Drawing

Qty

(1)

(2)

(6)

(3)

(4/5)

ACTIVE

SOIC

Green (RoHS

& no Sb/Br)

CU NIPDAU

Level-1-260C-UNLIM

KADAC

LFC789D25CDE4

LFC789D25CDR

ACTIVE

Green (RoHS

& no Sb/Br)

0 to 70

KADAC

2500

Green (RoHS

& no Sb/Br)

0 to 70

⁽¹⁾The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

⁽²⁾Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability

information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.

Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that

lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.

Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between

the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.

Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight

in homogeneous material)

⁽³⁾MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

⁽⁴⁾There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

⁽⁵⁾Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

⁽⁶⁾Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish

value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

Addendum-Page 1

PACKAGE OPTION ADDENDUM

www.ti.com

10-Jun-2014

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2

PACKAGE MATERIALS INFORMATION

www.ti.com

14-Jul-2012

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device

Package Package Pins

Type Drawing

SPQ

Reel

Pin1

Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant

(mm) W1 (mm)

LFC789D25CDR

SOIC

2500

2000

330.0

12.4

6.4

7.0

5.2

3.6

2.1

1.6

8.0

12.0

LFC789D25CPWR

TSSOP

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

14-Jul-2012

*All dimensions are nominal

Device

Package Type Package Drawing Pins

SPQ

Length (mm) Width (mm) Height (mm)

LFC789D25CDR

SOIC

2500

2000

340.5

367.0

338.1

367.0

20.6

35.0

LFC789D25CPWR

TSSOP

Pack Materials-Page 2

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Products

Applications

Audio

www.ti.com/audio

amplifier.ti.com

dataconverter.ti.com

www.dlp.com

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Communications and Telecom www.ti.com/communications

Amplifiers

Data Converters

DLP® Products

DSP

Computers and Peripherals

Consumer Electronics

Energy and Lighting

Industrial

www.ti.com/computers

www.ti.com/consumer-apps

www.ti.com/energy

dsp.ti.com

Clocks and Timers

Interface

www.ti.com/clocks

interface.ti.com

logic.ti.com

www.ti.com/industrial

www.ti.com/medical

Medical

Logic

Security

www.ti.com/security

Power Mgmt

Microcontrollers

RFID

power.ti.com

Space, Avionics and Defense

Video and Imaging

www.ti.com/space-avionics-defense

www.ti.com/video

microcontroller.ti.com

www.ti-rfid.com

www.ti.com/omap

OMAP Applications Processors

Wireless Connectivity

TI E2E Community

e2e.ti.com

www.ti.com/wirelessconnectivity

Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265

LFC789D25CPWG4 [TI]

相关型号：

LFC789D25CPWR

LFC789D25CPWRG4

LFC8C1-32.000MHZ

LFC8C1-8.000MHZ

LFC8C3-28.000MHZ

LFC8E1-16.001MHZ

LFC8E1-30.000MHZ

LFC8E3-28.000MHZ

LFC8F1-16.001MHZ

LFC8F3-67.000MHZ

LFCB0001X

LFCB0002X