INA317 [TI]
微功耗 (50µA)、零漂移(75µV 失调电压、0.3µV/°C)、精密 RRO 仪表放大器;型号: | INA317 |
厂家: | TEXAS INSTRUMENTS |
描述: | 微功耗 (50µA)、零漂移(75µV 失调电压、0.3µV/°C)、精密 RRO 仪表放大器 放大器 仪表 仪表放大器 |
文件: | 总32页 (文件大小:956K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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INA317
ZHCSH47 –NOVEMBER 2017
INA317 微功耗 (50µA)、零漂移、轨至轨输出仪表放大器
1 特性
3 说明
1
•
低失调电压:75µV(最大值),G ≥ 100
低温漂:0.3µV/°C,G ≥ 100
INA317 是一款具备出色精度的低功耗精密仪表放大
器。INA317 采用 3 种多功能运算放大器设计,尺寸小
巧,功耗较低,适用于各种便携式 应用。
•
•
•
低噪声:50nV/√Hz,G ≥ 100
高共模抑制比 (CMRR):100dB(最小值),G ≥
10
单个外部电阻器可根据行业标准增益等式 G = 1 +
(100 kΩ / RG) 的定义,设置 1 至 1000 范围内的任意
增益。
•
•
•
•
•
•
•
•
低输入偏置电流:200pA(最大值)
电源范围:1.8V 至 5.5V
该仪表放大器提供低失调电压(75µV,G ≥ 100)、出
色的失调电压漂移
输入电压:(V–) 0.1V 至 (V+) –0.1V
电压范围:(V–) 0.05V 至 (V+) –0.05V
低静态电流:50µA
(0.3 µV/°C,G ≥ 100)和高共模抑制(G ≥ 10 时为
100dB)。INA317 采用低至 1.8V (±0.9V) 电压和
50µA 静态电流的电源供电,因而该器件适用于电池供
电系统。INA317 器件采用自动校准技术确保广泛工业
温度范围内的精度,可提供可扩展到直流的低噪声密度
(50nV/√Hz)。
工作温度范围:-40°C 至 +125°C
已过滤射频干扰 (RFI) 的输入
8 引脚 VSSOP 封装
2 应用
•
•
•
•
•
•
•
•
•
桥式放大器
INA317 采用 8 引脚 VSSOP 表面贴装式封装,额定温
度范围为 TA = –40°C 至 +125°C。
心电图 (ECG) 放大器
压力传感器
器件信息(1)
医疗仪表
器件型号
INA317
封装
VSSOP (8)
封装尺寸(标称值)
便携式仪表
3.00mm × 3.00mm
衡器
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附
录。
热电偶放大器
电阻式温度检测器 (RTD) 传感器放大器
数据采集
简化原理图
V+
7
2
VIN-
RFI Filtered Inputs
150 kΩ
150 kΩ
A1
RFI Filtered Inputs
1
50 kΩ
6
5
VOUT
A3
RG
50 kΩ
8
3
RFI Filtered Inputs
RFI Filtered Inputs
150 kΩ
150 kΩ
REF
A2
VIN+
INA317
4
100 kΩ
V-
G = 1 +
RG
Copyright © 2017, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SBOS896
INA317
ZHCSH47 –NOVEMBER 2017
www.ti.com.cn
目录
7.4 Device Functional Modes........................................ 13
Application and Implementation ........................ 14
8.1 Application Information............................................ 14
8.2 Typical Application ................................................. 14
Power Supply Recommendations...................... 19
1
2
3
4
5
6
特性.......................................................................... 1
8
9
应用.......................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 2
Pin Configuration and Functions......................... 3
Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information ................................................. 4
6.5 Electrical Characteristics........................................... 5
6.6 Typical Characteristics.............................................. 7
Detailed Description ............................................ 13
7.1 Overview ................................................................. 13
7.2 Functional Block Diagram ....................................... 13
7.3 Feature Description................................................. 13
10 Layout................................................................... 20
10.1 Layout Guidelines ................................................. 20
10.2 Layout Example .................................................... 21
11 器件和文档支持 ..................................................... 22
11.1 器件支持................................................................ 22
11.2 文档支持................................................................ 23
11.3 商标....................................................................... 23
11.4 静电放电警告......................................................... 24
11.5 Glossary................................................................ 24
12 机械、封装和可订购信息....................................... 25
7
4 修订历史记录
注:之前版本的页码可能与当前版本有所不同。
日期
修订版本
说明
2017 年 11 月
*
初始发行版
2
Copyright © 2017, Texas Instruments Incorporated
INA317
www.ti.com.cn
ZHCSH47 –NOVEMBER 2017
5 Pin Configuration and Functions
DGK Package
8-Pin VSSOP
Top View
RG
VIN-
VIN+
V-
RG
1
2
3
4
8
7
6
5
V+
VOUT
REF
Pin Functions
PIN
I/O
DESCRIPTION
NAME
REF
RG
NO.
5
I
Reference input. This pin must be driven by low impedance or connected to ground.
1, 8
7
—
—
—
I
Gain setting pins. For gains greater than 1, place a gain resistor between pins 1 and 8.
V+
Positive supply
Negative supply
Positive input
Negative input
Output
V–
4
VIN+
VIN–
VOUT
3
2
I
6
O
Copyright © 2017, Texas Instruments Incorporated
3
INA317
ZHCSH47 –NOVEMBER 2017
www.ti.com.cn
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
7
MAX
UNIT
Supply voltage
V
Analog input voltage(2)
Output short-circuit(3)
Operating temperature, TA
Junction temperature, TJ
Storage temperature, Tstg
(V–) – 0.3
(V+) + 0.3
V
Continuous
–40
150
150
150
°C
°C
°C
–65
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Input pins are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3 V beyond the supply rails must be
current limited to 10 mA or less.
(3) Short-circuit to ground.
6.2 ESD Ratings
VALUE
±4000
±1000
±200
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
Machine model (MM)
V(ESD) Electrostatic discharge
V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
5.5
UNIT
VS
Supply voltage
1.8
V
Specified temperature
–40
125
°C
6.4 Thermal Information
INA317
DGK (VSSOP)
8 PINS
169.5
THERMAL METRIC(1)
UNIT
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
62.7
90.3
ψJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
7.6
ψJB
88.7
RθJC(bot)
—
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
4
Copyright © 2017, Texas Instruments Incorporated
INA317
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ZHCSH47 –NOVEMBER 2017
6.5 Electrical Characteristics
for VS = 1.8 V to 5.5 V at TA = 25°C, RL = 10 kΩ, VREF = VS / 2, and G = 1 (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT(1)
VOSI
Offset voltage, RTI(2)
±10 ±25 / G
±75 ±75 / G
±0.3 ±0.5 / G
±5 ±15 / G
μV
vs temperature, TA = –40°C to 125°C
vs power supply,1.8 V ≤ VS ≤ 5.5 V
Long-term stability
μV/°C
μV/V
PSR
±1 ±5 / G
(3)
See
Turnon time to specified VOSI
Impedance
TA = –40°C to 125°C
See Typical Characteristics
ZIN
Differential
100 || 3
100 || 3
GΩ || pF
GΩ || pF
V
ZIN
Common-mode
VCM
Common-mode voltage range
VO = 0 V
(V–) + 0.1
(V+) – 0.1
DC to 60 Hz
VCM = (V–) + 0.1 V
to (V+) – 0.1 V, G = 1
80
90
110
115
115
dB
dB
dB
dB
VCM = (V–) + 0.1 V
to (V+) – 0.1 V, G = 10
100
100
100
CMR
Common-mode rejection
VCM = (V–) + 0.1 V
to (V+) – 0.1 V, G = 100,
VCM = (V–) + 0.1 V
to (V+) – 0.1 V, G = 1000
INPUT BIAS CURRENT
Input bias current
±70
±50
±200
±200
pA
pA/°C
pA
IB
vs temperature
TA = –40°C to 125°C
TA = –40°C to 125°C
See 图 26
See 图 28
Input offset current
IOS
vs temperature
pA/°C
INPUT VOLTAGE NOISE
G = 100, RS = 0 Ω, f = 10 Hz
G = 100, RS = 0 Ω, f = 100 Hz
G = 100, RS = 0 Ω, f = 1 kHz
G = 100, RS = 0 Ω, f = 0.1 Hz to 10 Hz
f = 10 Hz
50
50
50
1
nV/√Hz
nV/√Hz
nV/√Hz
μVPP
eNI
Input voltage noise
Input current noise
100
2
fA/√Hz
pAPP
iN
f = 0.1 Hz to 10 Hz
GAIN
G
Gain equation
Range of gain
1 + (100 kΩ / RG)
V/V
V/V
1
1000
VS = 5.5 V, (V–) + 100 mV
≤ VO ≤ (V+) – 100 mV
G = 1
±0.01%
±0.05%
±0.07%
±0.25%
±1
±0.1%
±0.25%
±0.25%
±0.5%
±5
Gain error
G = 10
G = 100
G = 1000
Gain vs temperature, G = 1
Gain vs temperature, G > 1(4)
TA = –40°C to 125°C
TA = –40°C to 125°C
ppm/°C
ppm/°C
±15
±50
VS = 5.5 V, (V–) + 100 mV
≤ VO ≤ (V+) – 100 mV
Gain nonlinearity
Gain nonlinearity, G = 1 to 1000
RL = 10 kΩ
10
ppm
OUTPUT
Output voltage swing from rail
Capacitive load drive
VS = 5.5 V
RL = 10 kΩ
See 图 29
50
mV
pF
500
(1) Total VOS, referred-to-input = (VOSI) + (VOSO / G)
(2) RTI = Referred-to-input
(3) 300-hour life test at 150°C demonstrated randomly distributed variation of approximately 1 μV
(4) Does not include effects of external resistor RG
Copyright © 2017, Texas Instruments Incorporated
5
INA317
ZHCSH47 –NOVEMBER 2017
www.ti.com.cn
Electrical Characteristics (continued)
for VS = 1.8 V to 5.5 V at TA = 25°C, RL = 10 kΩ, VREF = VS / 2, and G = 1 (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ISC
Short-circuit current
Continuous to common
–40, 5
mA
FREQUENCY RESPONSE
G = 1
150
35
kHz
kHz
kHz
Hz
G = 10
Bandwidth, –3 dB
G = 100
3.5
350
0.16
0.05
50
G = 1000
VS = 5 V, VO = 4-V step, G = 1
VS = 5 V, VO = 4-V step, G = 100
VSTEP = 4 V, G = 1
VSTEP = 4 V, G = 100
VSTEP = 4 V, G = 1
VSTEP = 4 V, G = 100
50% overdrive
V/μs
V/μs
μs
SR
tS
Slew rate
Settling time to 0.01%
400
60
μs
μs
tS
Settling time to 0.001%
Overload recovery
500
75
μs
μs
REFERENCE INPUT
RIN
300
kΩ
Voltage range
POWER SUPPLY
V–
V+
V
Single voltage range
Dual voltage range
VIN = VS / 2
1.8
5.5
±2.75
75
V
V
Voltage range
±0.9
50
μA
μA
IQ
Quiescent current vs temperature
TA = –40°C to 125°C
80
TEMPERATURE RANGE
Specified temperature range
Operating temperature range
–40
–40
125
150
°C
°C
6
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INA317
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ZHCSH47 –NOVEMBER 2017
6.6 Typical Characteristics
at TA = 25°C, VS = 5 V, RL = 10 kΩ, VREF = midsupply, and G = 1, (unless otherwise noted)
Input Offset Voltage (µV)
Input Voltage Offset Drift (µV/°C)
VS = 5.5 V
VS = 5.5 V
TA = –40°C to +125°C
图 1. Input Offset Voltage
图 2. Input Voltage Offset Drift
Output Offset Voltage (µV)
Output Voltage Offset Drift (µV/°C)
VS = 5.5 V
VS = 5.5 V
TA = –40°C to +125°C
图 3. Output Offset Voltage
图 4. Output Voltage Offset Drift
0
-5
VS = 1.8 V
VS = 5 V
-10
-15
-20
-25
Time (1 s/div)
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCM (V)
Gain = 1
图 6. 0.1-Hz to 10-Hz Noise
图 5. Offset Voltage vs Common-Mode Voltage
版权 © 2017, Texas Instruments Incorporated
7
INA317
ZHCSH47 –NOVEMBER 2017
www.ti.com.cn
Typical Characteristics (接下页)
at TA = 25°C, VS = 5 V, RL = 10 kΩ, VREF = midsupply, and G = 1, (unless otherwise noted)
1000
1000
100
Output Noise
100
Current Noise
Input Noise
10
1
10
2
(Output Noise)
G
Total Input-Referred Noise =
(Input Noise)2
+
1
0.1
1
10
100
1k
10k
Time (1 s/div)
Frequency (Hz)
Gain = 100
图 8. Spectral Noise Density
图 7. 0.1-Hz to 10-Hz Noise
0.012
0.008
0.004
0
G = 1000
G = 100
G = 10
G = 1
-0.004
-0.008
-0.012
Time (25 µs/div)
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Gain = 1
VOUT (V)
VS = ±2.75 V
图 10. Large Signal Response
图 9. Nonlinearity Error
Time (100 µs/div)
Time (10 µs/div)
Gain = 100
Gain = 1
图 11. Large-Signal Step Response
图 12. Small-Signal Step Response
8
版权 © 2017, Texas Instruments Incorporated
INA317
www.ti.com.cn
ZHCSH47 –NOVEMBER 2017
Typical Characteristics (接下页)
at TA = 25°C, VS = 5 V, RL = 10 kΩ, VREF = midsupply, and G = 1, (unless otherwise noted)
10000
1000
0.001%
100
0.01%
10
0.1%
1
10
100
1000
Time (100 µs/div)
Gain (V/V)
Gain = 100
图 14. Settling Time vs Gain
图 13. Small-Signal Step Response
80
60
G = 1000
Supply
G = 100
G = 10
40
VOUT
20
G = 1
0
-20
-40
-60
Time (50 µs/div)
10
100
1k
10k
100k
1M
Gain = 1
Frequency (Hz)
图 15. Start-Up Settling Time
图 16. Gain vs Frequency
10
8
VS
VS
=
=
2.75 V
0.ꢀ V
G = 1
6
4
G = 10
2
0
-2
-4
-6
-8
-10
G = 100,
G = 1000
-50
-25
0
25
50
75
100
125
150
Temperature (°C)
CMRR (µV/V)
VS = 5.5 V
图 17. Common-Mode Rejection Ratio
图 18. Common-Mode Rejection Ratio vs Temperature
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ZHCSH47 –NOVEMBER 2017
www.ti.com.cn
Typical Characteristics (接下页)
at TA = 25°C, VS = 5 V, RL = 10 kΩ, VREF = midsupply, and G = 1, (unless otherwise noted)
160
140
120
100
80
2.5
2.0
G = 1000
G = 100
1.0
0
60
G = 1
-1.0
40
G = 10
20
-2.0
2.5
0
10
100
1k
Frequency (Hz)
10k
100k
-2.5 -2.0
-1.0
0
1.0
2.0 2.5
Output Voltage (V)
VREF = 0
VS = ±2.5 V
All gains
图 19. Common-Mode Rejection Ratio vs Frequency
图 20. Typical Common-Mode Range vs Output Voltage
5
0.9
0.7
0.5
4
3
2
1
0
0.3
0.1
-0.1
-0.3
-0.5
-0.7
-0.9
0
1
2
3
4
5
-0.9 -0.7 -0.5 -0.3 -0.1 0.1 0.3
Output Voltage (V)
0.5
0.7
0.9
Output Voltage (V)
VS = 5 V
VREF = 0
All gains
VS = ±0.9 V
VREF = 0
All gains
图 21. Typical Common-Mode Range vs Output Voltage
图 22. Typical Common-Mode Range vs Output Voltage
1.8
160
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
140
G = 1000
120
100
G = 100
80
60
G = 10
40
20
G = 1
0
0
0.2
0.4
0.5
0.8
1.0 1.2
1.4
1.6
1.8
1
10
1k
10k
100k
1M
100
Output Voltage (V)
Frequency (Hz)
VS = 1.8 V
VREF = 0
图 23. Typical Common-Mode Range vs Output Voltage
图 24. Positive Power-Supply Rejection Ratio
10
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INA317
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ZHCSH47 –NOVEMBER 2017
Typical Characteristics (接下页)
at TA = 25°C, VS = 5 V, RL = 10 kΩ, VREF = midsupply, and G = 1, (unless otherwise noted)
160
140
120
100
80
1200
1000
800
600
400
200
0
+IB
-IB
G = 100
G = 1000
G = 10
60
V
=
0ꢀ ꢁ V
V
= 2ꢀ75 V
S
S
40
G = 1
20
0
-200
-20
0.1
1
10
100
1k
10k
100k
1M
-50
-25
0
25
50
75
100
125
150
Frequency (Hz)
Temperature (°C)
VS = 5 V
图 25. Negative Power-Supply Rejection Ratio
图 26. Input Bias Current vs Temperature
250
200
150
100
50
200
180
160
140
120
100
80
V
V
=
=
2ꢀ75 V
0ꢀ. V
S
60
0
S
40
-50
-100
20
0
-50
-25
0
25
50
75
100
125
150
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Temperature (°C)
VCM (V)
VS = 5 V
VS = 1.8 V
图 28. Input Offset Current vs Temperature
图 27. Input Bias Current vs Common-Mode Voltage
80
70
60
50
40
30
20
10
0
(V+)
VS
VS
=
=
2.75 V
0.ꢀ V
(V+) - 0.25
(V+) - 0.50
(V+) - 0.75
(V+) - 1.00
(V+) - 1.25
(V+) - 1.50
(V+) - 1.75
VS = 5 V
(V-) + 1.75
(V-) + 1.50
(V-) + 1.25
(V-) + 1.00
(V-) + 0.75
(V-) + 0.50
(V-) + 0.25
(V-)
VS = 1.8 V
125°C
25°C
-40°C
-50
-25
0
25
50
75
100
125
150
0
10
20
30
40
50
60
IOUT (mA)
Temperature (°C)
图 30. Quiescent Current vs Temperature
图 29. Output Voltage Swing vs Output Current
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ZHCSH47 –NOVEMBER 2017
www.ti.com.cn
Typical Characteristics (接下页)
at TA = 25°C, VS = 5 V, RL = 10 kΩ, VREF = midsupply, and G = 1, (unless otherwise noted)
80
70
VS = 5 V
60
50
40
VS = 1.8 V
30
20
10
0
0
1.0
2.0
3.0
4.0
5.0
VCM (V)
图 31. Quiescent Current vs Common-Mode Voltage
12
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INA317
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ZHCSH47 –NOVEMBER 2017
7 Detailed Description
7.1 Overview
The INA317 is a monolithic instrumentation amplifier (INA) based on the precision zero-drift OPA333 (operational
amplifier) core. The INA317 integrates laser-trimmed resistors to ensure excellent common-mode rejection and
low gain error. The combination of the zero-drift amplifier core and the precision resistors allows this device to
achieve outstanding DC precision and is designed for 3.3-V and 5-V industrial applications.
7.2 Functional Block Diagram
V+
7
2
VIN-
RFI Filtered Inputs
150 kΩ
150 kΩ
A1
RFI Filtered Inputs
1
50 kΩ
6
5
VOUT
A3
RG
50 kΩ
8
3
RFI Filtered Inputs
RFI Filtered Inputs
150 kΩ
150 kΩ
REF
A2
VIN+
INA317
4
100 kΩ
V-
G = 1 +
RG
Copyright © 2017, Texas Instruments Incorporated
7.3 Feature Description
The INA317 is a low-power, zero-drift instrumentation amplifier that offers accuracy. The versatile three-
operational-amplifier design and small size makes the amplifier designed for a wide range of applications. Zero-
drift chopper circuitry provides DC specifications. A single external resistor sets any gain from 1 to 10,000. The
INA317 is laser trimmed for high common-mode rejection (100 dB at G ≥ 100). Typically, the INA317 operates
with power supplies as low as 1.8 V and quiescent current of 50 µA.
7.4 Device Functional Modes
7.4.1 Internal Offset Correction
INA317 internal operational amplifiers use an autocalibration technique with a time-continuous 350-kHz
operational amplifier in the signal path. The amplifier is zero-corrected every 8 µs using a proprietary technique.
Upon power up, the amplifier requires approximately 100 µs to achieve specified VOS accuracy. This design has
no aliasing or flicker noise.
7.4.2 Input Common-Mode Range
The linear input voltage range of the input circuitry of the INA317 is from approximately 0.1 V below the positive
supply voltage to 0.1 V above the negative supply. However, as a differential input voltage causes the output
voltage to increase, the output voltage swing of amplifiers A1 and A2 limits the linear input range. As a result, the
linear common-mode input range is related to the output voltage of the complete amplifier. This behavior
depends on supply voltage; see 图 20.
Input overload conditions can produce an output voltage that appears normal. For example, if an input overload
condition drives the input amplifiers to the respective positive output swing limit, the difference voltage measured
by the output amplifier is approximately zero. The output of the INA317 is approximately 0 V even though the
inputs are overloaded.
版权 © 2017, Texas Instruments Incorporated
13
INA317
ZHCSH47 –NOVEMBER 2017
www.ti.com.cn
8 Application and Implementation
注
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The INA317 measures small differential voltage with high common-mode voltage that develops between the
noninverting and inverting input. The high input impedance makes the INA317 designed for a wide range of
applications. The ability to set the reference pin to adjust the functionality of the output signal offers additional
flexibility that is practical for multiple configurations.
8.2 Typical Application
图 32 shows the basic connections required for operation of the INA317 device. Good layout practice mandates
the use of bypass capacitors placed close to the device pins as shown.
The output of the INA317 device is referred to the output reference (REF) pin, which is normally grounded. This
connection must be low-impedance to ensure good common-mode rejection. Although 15 Ω or less of stray
resistance is tolerated while maintaining specified CMRR, small stray resistances of tens of ohms in series with
the REF pin causes noticeable degradation in CMRR.
V+
0.1 mF
7
2
RFI Filter
RFI Filter
VIN-
150 kΩ
150 kΩ
A1
VO = G ´ (VIN+ - VIN-
)
1
100 kΩ
G = 1 +
RG
50 kΩ
6
5
RG
A3
50 kΩ
+
8
3
VO
Load
-
RFI Filter
RFI Filter
150 kΩ
150 kΩ
A2
VIN+
Ref
INA317
4
0.1 mF
V-
Also drawn in simplified form:
VIN-
RG
VO
INA317
Ref
VIN+
Copyright © 2017, Texas Instruments Incorporated
图 32. Basic Connections
14
版权 © 2017, Texas Instruments Incorporated
INA317
www.ti.com.cn
ZHCSH47 –NOVEMBER 2017
Typical Application (接下页)
8.2.1 Design Requirements
The device is configured to monitor the input differential voltage when the gain of the external resistor RG sets
the input signal. The output signal references to the REF pin. The most common application is where the output
is referenced to ground when no input signal is present by connecting the REF pin to ground. When the input
signal increases, the output voltage at the OUT pin increases.
8.2.2 Detailed Design Procedure
8.2.2.1 Setting the Gain
A single external resistor (RG) that is connected between pins 1 and 8 sets the gain of the INA317. The value of
RG is selected according to 公式 1:
G = 1 + (100 kΩ / RG)
(1)
表 1 lists several commonly-used gains and resistor values. The 100 kΩ in 公式 1 is a result of the sum of the
two internal feedback resistors (A1 and A2.) These on-chip resistors are laser trimmed to accurate absolute
values. The accuracy and temperature coefficient of these resistors are included in the gain accuracy and drift
specifications of the INA317 device.
The stability and temperature drift of the external gain setting resistor (RG) also affects gain. The contribution of
RG to gain accuracy and drift is inferred from the gain in公式 1. Low resistor values required for high gain make
wiring resistance important. Sockets add to the wiring resistance and contribute additional gain error (possibly an
unstable gain error) in gains of approximately 100 or greater. To ensure stability, avoid parasitic capacitance of
more than a few picofarads at the RG connections. Careful matching of any parasitics on RG pins maintains
optimal CMRR over frequency.
表 1. Commonly-Used Gains and Resistor Values
DESIRED GAIN
RG (Ω)
NC(1)
100 k
25 k
NEAREST 1% RG (Ω)
1
2
NC
100 k
24.9 k
11 k
5.23 k
2.05
1 k
5
10
11.1 k
5.26 k
2.04 k
1.01 k
502.5
200.4
100.1
20
50
100
200
500
1000
499
200
100
(1) NC denotes no connection. When using the SPICE model, the simulation does not converge unless a
resistor is connected to the RG pins; use a large resistor value.
8.2.2.2 Internal Offset Correction
The INA317 device internal operational amplifiers use an autocalibration technique with a time-continuous 350-
kHz operational amplifier in the signal path. The amplifier is zero-corrected every 8 µs using a proprietary
technique. At power-up, the amplifier requires approximately 100 µs to achieve specified VOS accuracy. This
design has no aliasing or flicker noise.
8.2.2.3 Offset Trimming
Most applications require no external offset adjustment. However, apply a voltage to the REF pin to make
adjustments if necessary. 图 33 shows an optional circuit for trimming the output offset voltage. The voltage
applied to REF pin is added at the output. The operational amplifier buffer provides low impedance at the REF
pin to preserve good common-mode rejection.
版权 © 2017, Texas Instruments Incorporated
15
INA317
ZHCSH47 –NOVEMBER 2017
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VIN-
V+
RG
VO
INA317
Ref
100 mA
½ REF200
VIN+
100 ꢀ
100 ꢀ
OPA333
±10 mV
Adjustment Range
10 kꢀ
100 mA
½ REF200
V-
Copyright © 2017, Texas Instruments Incorporated
图 33. Optional Trimming of Output Offset Voltage
8.2.2.4 Noise Performance
The autocalibration technique used by the INA317 device results in reduced low-frequency noise, typically only
50 nV/√Hz (G = 100). The spectral noise density is shown in 图 8. Low-frequency noise of the INA317 device is
approximately 1 µVPP measured from 0.1 Hz to 10 Hz (G = 100).
8.2.2.5 Input Bias Current Return Path
The input impedance of the INA317 device is extremely high(approximately 100 GΩ.) However, a path must be
provided for the input bias current of the inputs. This input bias current is typically ±70 pA. High-input impedance
means that this input bias current changes very little with varying input voltage.
For proper operation, input circuitry must provide a path for the input bias current. 图 34 shows various
provisions for an input bias current path. Without a bias current path, the inputs float to a potential that exceeds
the common-mode range of the INA317 device, and the input amplifiers saturate. If the differential source
resistance is low, the bias current return path connects to one input (see the thermocouple example in 图 34).
With higher source impedance, using two equal resistors provides a balanced input with possible advantages of
lower input offset voltage as a result of bias current and better high-frequency common-mode rejection.
16
版权 © 2017, Texas Instruments Incorporated
INA317
www.ti.com.cn
ZHCSH47 –NOVEMBER 2017
Microphone,
Hydrophone,
and more
INA317
47 kΩ
47 kΩ
Thermocouple
INA317
10 kΩ
INA317
Copyright © 2017, Texas Instruments Incorporated
图 34. Providing an Input Common-Mode Current Path
8.2.2.6 Input Common-Mode Range
The linear input voltage range of the input circuitry of the INA317 device is from approximately 0.1 V below the
positive supply voltage to 0.1 V above the negative supply. As a differential input voltage causes the output
voltage to increase, however, the linear input range is limited by the output voltage swing of amplifiers A1 and A2.
The linear common-mode input range is related to the output voltage of the complete amplifier. This behavior
depends on supply voltage(see 图 20 to 图 23 in the Typical Characteristics section.)
Input overload conditions can produce an output voltage that appears normal. For example, if an input overload
condition drives both input amplifiers to the respective positive output swing limit, the difference voltage
measured by the output amplifier is near zero. The output of the INA317 is near 0 V even though both inputs are
overloaded.
8.2.2.7 Operating Voltage
The INA317 operates over a power-supply range of 1.8 V to 5.5 V (±0.9 V to ±2.75 V). Supply voltages higher
than 7 V (absolute maximum) can permanently damage the device. Parameters that vary over supply voltage or
temperature are shown in the Typical Characteristics section of this data sheet.
8.2.2.8 Low Voltage Operation
The INA317 device operates on power supplies as low as ±0.9 V. Most parameters vary only slightly throughout
this supply voltage range; see the Typical Characteristics section. Operation at very low supply voltage requires
careful attention to ensure that the input voltages remain within the linear range. Voltage swing requirements of
internal nodes limit the input common-mode range with low power supply voltage. 图 20 to 图 23 show the range
of linear operation for various supply voltages and gains.
8.2.2.9 Single-Supply Operation
The INA317 device can be used on single power supplies of 1.8 V to 5.5 V. 图 35 shows a basic single-supply
circuit. The output REF pin is connected to midsupply. Zero differential input voltage demands an output voltage
of midsupply. Actual output voltage swing is limited to approximately 50 mV more than ground when the load is
referred to ground as shown. 图 29 shows how the output voltage swing varies with output current.
版权 © 2017, Texas Instruments Incorporated
17
INA317
ZHCSH47 –NOVEMBER 2017
www.ti.com.cn
With single-supply operation, VIN+ and VIN– must be 0.1 V more than ground for linear operation. For instance,
the inverting input cannot connect to ground to measure a voltage that is connected to the noninverting input.
To show the issues affecting low voltage operation, see 图 35. 图 35 shows the INA317 device operating from a
single 3-V supply. A resistor in series with the low side of the bridge ensures that the bridge output voltage is
within the common-mode range of the amplifier inputs.
+3 V
3 V
2 V - DV
RG
VO
INA317
300 Ω
Ref
1.5 V
2 V + DV
150 Ω
(1)
R1
Copyright © 2017, Texas Instruments Incorporated
(1) R1 creates proper common-mode voltage only for low-voltage operation; see Single-Supply Operation.
图 35. Single-Supply Bridge Amplifier
8.2.2.10 Input Protection
The input pins of the INA317 device are protected with internal diodes that are connected to the power-supply
rails. These diodes clamp the applied signal to prevent the signal from damaging the input circuitry. If the input
signal voltage exceeds the power supplies by more than 0.3 V, the input signal current must be limited to less
than 10 mA to protect the internal clamp diodes. Limit the current with a series input resistor. Some signal
sources are inherently current limited and do not require limiting resistors.
18
版权 © 2017, Texas Instruments Incorporated
INA317
www.ti.com.cn
ZHCSH47 –NOVEMBER 2017
8.2.3 Application Curves
Time (25 µs/div)
Time (100 µs/div)
Gain = 1
Gain = 100
图 36. Large Signal Response
图 37. Large-Signal Step Response
Time (10 µs/div)
Time (100 µs/div)
Gain = 1
Gain = 100
图 38. Small-Signal Step Response
图 39. Small-Signal Step Response
9 Power Supply Recommendations
The minimum power supply voltage for INA317 is 1.8 V and the maximum power supply voltage is 5.5 V. For
optimum performance, 3.3 V to 5 V is recommended. TI recommends adding a bypass capacitor at the input to
compensate for the layout and power supply source impedance.
版权 © 2017, Texas Instruments Incorporated
19
INA317
ZHCSH47 –NOVEMBER 2017
www.ti.com.cn
10 Layout
10.1 Layout Guidelines
TI recommends paying attention to good layout practices. Keep traces short and use a printed-circuit-board
(PCB) ground plane with surface-mount components placed as close to the device pins as possible. Place a 0.1-
µF bypass capacitor as close as possible the supply pins. Apply these guidelines throughout the analog circuit to
improve performance and reduce electromagnetic interference (EMI) susceptibility.
Instrumentation amplifiers vary in the susceptibility to radio-frequency interference (RFI). RFI is identified as a
variation in offset voltage or DC signal levels with changes in the interfering RF signal. The INA317 device is
designed to minimize susceptibility to RFI by incorporating passive RC filters with an 8-MHz corner frequency at
the VIN+ and VIN– inputs. As a result, the INA317 device demonstrates low sensitivity compared to previous
generation devices. However, strong RF fields can cause varied offset levels and may require additional
shielding.
20
版权 © 2017, Texas Instruments Incorporated
INA317
www.ti.com.cn
ZHCSH47 –NOVEMBER 2017
10.2 Layout Example
+V
C2
R2
+IN
-IN
RG
INA317
RG
R3
OUT
R1
C1
Ground plane
removed at gain
-V
resistor to minimize
parasitic capacitance
Use ground pours for
shielding the input
signal pairs
R3
+V
GND
R1
C2
1
2
3
4
RG
RG
8
7
6
5
œIN
+IN
œIN
+IN
-VS
+VS
OUT
REF
Input traces routed
adjacent to each other
OUT
R2
Low-impedance
connection for
reference terminal
GND
C1
Place bypass
capacitors as close to
IC as possible
-V
Copyright © 2017, Texas Instruments Incorporated
图 40. INA317 Layout
版权 © 2017, Texas Instruments Incorporated
21
INA317
ZHCSH47 –NOVEMBER 2017
www.ti.com.cn
11 器件和文档支持
11.1 器件支持
11.1.1 开发支持
11.1.1.1 TINA-TI(免费下载软件)
针对 INA317 使用基于 SPICE 的 TINA-TI 模拟仿真程序
TINA 是一款简单、功能强大且易于使用的电路仿真程序,此程序基于 SPICE 引擎。TINA-TI 是 TINA 软件的一款
免费全功能版本,除了一系列无源和有源模型外,此版本软件还预先载入了一个宏模型库。它提供所有传统的
SPICE 直流 (DC)、瞬态和频域分析以及其他设计功能。
TINA-TI 可从 Analog eLab Design Center(模拟电子实验室设计中心)免费下载,它提供全面的后续处理能力,
使得用户能够以多种方式形成结果。
虚拟仪器为用户提供选择输入波形和探测电路节点、电压和波形的功能,从而创建一个动态的快速入门工具。
图 41 和图 42 给出了适用于 INA317 器件的 TINA-TI 电路示例,可用于开发、修改和评估特定 应用的电路设
计。。下面给出了这些仿真文件的下载链接。
注
必须安装 TINA 软件(从 DesignSoft)或者 TINA-TI 软件后才能使用这些文件。请从 TINA-
TI 文件夹中下载免费的 TINA-TI 软件。
VoA1
Half of matched
monolithic dual
NPN transistors
(example: MMDT3904)
Vout
2
_
4
U1INA317
3
1
V-
RG
2
-
-
R8 10k
Vdiff
+
1
8
Out
6
V
+
Input I10n
4
Ref
5
+
+
VM1
+
RG
+
7
V+
5
U1 OPA335
U5 OPA369
3
Optional buffer for driving
SAR converters with
sampling systems of ³ 33 kHz.
Half of matched
monolithic dual
NPN transistors
(example: MMDT3904)
VoA2
V1 5
Rset 2.5M
uCVref/2 2.5
3
1
2
-
+
4
+
5
U6 OPA369
Copyright © 2017, Texas Instruments Incorporated
(1) 如下链接会打开 TI 对数放大器网页:对数放大器产品主页
(2) 未显示对数晶体管的温度补偿。
(3) 对于单片对数放大器(例如 LOG112 或 LOG114),请参阅注 1 中的链接。
图 41. 便携式电池供电类系统的低功耗对数函数电路
(例如血糖仪)
要下载包含此电路 TINA-TI 仿真文件的压缩文件,请点击如下链接:对数电路。
22
版权 © 2017, Texas Instruments Incorporated
INA317
www.ti.com.cn
ZHCSH47 –NOVEMBER 2017
器件支持 (接下页)
3V
R1
2 kꢀ
RWa
3 ꢀ
EMU21 RTD3
Pt100 RTD
-
U2
OPA333
RWb
3 ꢀ
+
+
2
VT+
RTD+
_
4
U1 INA317
Out
VT 25
3 V
V-
RG
VT-
RTD-
VDIFF
1
8
MSP430
PGA112
RGAIN
Mon+ Mon-
Ref
100 kꢀ
6
RG
+
V+
RWc
4 ꢀ
5
RZERO
3
7
Temp (°C)
(Volts = °C)
100 kꢀ
+
V
VREF+
3 V
VRTD
RWd
3 ꢀ
RTD Resistance
(Volts = Ohms)
+
+
IREF1
IREF2
A
A
3 V
VREF
3 V
VREF
VREF
U1 REF3212
Use BF861A
T3 BF256A
S
3 V
Use BF861A
EN
OUTF
OUTS
In
+
-
+
+
-
T1 BF256A
G
+
OPA3331 OPA333
GNDF GNDS
U3
OPA333
3 V
C
470 n7F
V4 3
RSET2
RSET1
2.5 kꢀ
2.5 kꢀ
Copyright © 2017, Texas Instruments Incorporated
RWa、RWb、RWc 和 RWd 用于仿真线电阻。包含这些电阻以展示 4 线感应技术对线路失配的抗扰性。这种方法假定使用 4 线 RTD。
图 42. 带有可编程增益采集系统的适用于 PT100 RTD 的 4 线、3V 调节器
要下载包含此电路 TINA-TI 仿真文件的压缩文件,请点击如下链接:PT100 RTD。
11.2 文档支持
11.2.1 相关文档
请参阅如下相关文档:
•
•
•
•
精密、低噪声、轨至轨输出,36V,零漂移运算放大器
50µV VOS、0.25µV/°C、35µA CMOS 运算放大器零漂移系列
4ppm/°C、100µA、SOT23-6 系列电压基准
《电路板布局布线技巧》
11.3 商标
All trademarks are the property of their respective owners.
版权 © 2017, Texas Instruments Incorporated
23
INA317
ZHCSH47 –NOVEMBER 2017
www.ti.com.cn
11.4 静电放电警告
这些装置包含有限的内置 ESD 保护。 存储或装卸时,应将导线一起截短或将装置放置于导电泡棉中,以防止 MOS 门极遭受静电损
伤。
11.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
24
版权 © 2017, Texas Instruments Incorporated
INA317
www.ti.com.cn
ZHCSH47 –NOVEMBER 2017
12 机械、封装和可订购信息
以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。数据如有变更,恕不另行通知和修
订此文档。如欲获取此产品说明书的浏览器版本,请参阅左侧的导航。
版权 © 2017, Texas Instruments Incorporated
25
PACKAGE OPTION ADDENDUM
www.ti.com
17-May-2023
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
INA317IDGKR
INA317IDGKT
ACTIVE
ACTIVE
VSSOP
VSSOP
DGK
DGK
8
8
2500 RoHS & Green
250 RoHS & Green
NIPDAUAG | SN
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
-40 to 125
-40 to 125
I317
I317
Samples
Samples
NIPDAUAG | SN
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
17-May-2023
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
24-May-2023
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
K0
P1
W
B0
Reel
Diameter
Cavity
A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
Overall width of the carrier tape
W
P1 Pitch between successive cavity centers
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2
Q3 Q4
Q1 Q2
Q3 Q4
User Direction of Feed
Pocket Quadrants
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
INA317IDGKR
INA317IDGKR
INA317IDGKT
INA317IDGKT
VSSOP
VSSOP
VSSOP
VSSOP
DGK
DGK
DGK
DGK
8
8
8
8
2500
2500
250
330.0
330.0
330.0
330.0
12.4
12.4
12.4
12.4
5.3
5.3
5.3
5.3
3.4
3.4
3.4
3.4
1.4
1.4
1.4
1.4
8.0
8.0
8.0
8.0
12.0
12.0
12.0
12.0
Q1
Q1
Q1
Q1
250
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
24-May-2023
TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
L
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
INA317IDGKR
INA317IDGKR
INA317IDGKT
INA317IDGKT
VSSOP
VSSOP
VSSOP
VSSOP
DGK
DGK
DGK
DGK
8
8
8
8
2500
2500
250
366.0
366.0
366.0
366.0
364.0
364.0
364.0
364.0
50.0
50.0
50.0
50.0
250
Pack Materials-Page 2
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