DS08MB200TSQX/NOPB [TI]
双路 800Mbps 2:1/1:2 LVDS 多路复用器/缓冲器 | RHS | 48 | -40 to 85;
| 型号： | DS08MB200TSQX/NOPB |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 双路 800Mbps 2:1/1:2 LVDS 多路复用器/缓冲器 | RHS | 48 | -40 to 85 驱动 接口集成电路 复用器 驱动器 |
| 文件： | 总15页 (文件大小：431K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DS08MB200
www.ti.com
SNLS197D –MAY 2006–REVISED MARCH 2013
DS08MB200 Dual 800 Mbps 2:1/1:2 LVDS Mux/Buffer
Check for Samples: DS08MB200
1
FEATURES
DESCRIPTION
The DS08MB200 is a dual-port 1 to 2 repeater/buffer
and 2 to 1 multiplexer. High-speed data paths and
flow-through pinout minimize internal device jitter and
simplify board layout. The differential inputs and
outputs interface to LVDS or Bus LVDS signals such
as those on TI's 10-, 16-, and 18- bit Bus LVDS
SerDes, or to CML or LVPECL signals.
2
•
•
Up to 800 Mbps Data Rate per Channel
LVDS/BLVDS/CML/LVPECL Compatible Inputs,
LVDS Compatible Outputs
•
•
•
•
•
•
•
Low Output Skew and Jitter
On-Chip 100Ω Input Termination
15 kV ESD Protection on LVDS Inputs/Outputs
Hot Plug Protection
The 3.3V supply, CMOS process, and robust I/O
ensure high performance at low power over the entire
industrial -40 to +85°C temperature range.
Single 3.3V Supply
Industrial -40 to +85°C Temperature Range
48-pin WQFN Package
Typical Application
Switch
Fabric A
FPGA
or
Mux Buffer
ASIC
Switch
Fabric B
Block Diagram
ENA_0
ENB_0
LI_0
SOA_0
SOB_0
ENL_0
LO_0
SIA_0
SIB_0
MUX_S0
Channel 0
Channel 1
Figure 1. DS08MB200 Block Diagram
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006–2013, Texas Instruments Incorporated
DS08MB200
SNLS197D –MAY 2006–REVISED MARCH 2013
www.ti.com
PIN DESCRIPTIONS
Pin
Name
WQFN Pin
Number
I/O, Type
Description
SWITCH SIDE DIFFERENTIAL INPUTS
SIA_0+
SIA_0−
30
29
I, LVDS Switch A-side Channel 0 inverting and non-inverting differential inputs. LVDS, Bus LVDS, CML, or
LVPECL compatible.
SIA_1+
SIA_1−
19
20
I, LVDS Switch A-side Channel 1 inverting and non-inverting differential inputs. LVDS, Bus LVDS, CML, or
LVPECL compatible.
SIB_0+
SIB_0−
28
27
I, LVDS Switch B-side Channel 0 inverting and non-inverting differential inputs. LVDS, Bus LVDS, CML, or
LVPECL compatible.
SIB_1+
SIB_1−
21
22
I, LVDS Switch B-side Channel 1 inverting and non-inverting differential inputs. LVDS, Bus LVDS, CML, or
LVPECL compatible.
LINE SIDE DIFFERENTIAL INPUTS
LI_0+
LI_0−
40
39
I, LVDS Line-side Channel 0 inverting and non-inverting differential inputs. LVDS, Bus LVDS, CML, or
LVPECL compatible.
LI_1+
LI_1−
9
10
I, LVDS Line-side Channel 1 inverting and non-inverting differential inputs. LVDS, Bus LVDS, CML, or
LVPECL compatible.
SWITCH SIDE DIFFERENTIAL OUTPUTS
SOA_0+
SOA_0−
34
33
O, LVDS Switch A-side Channel 0 inverting and non-inverting differential outputs. LVDS compatible(1)(2)
O, LVDS Switch A-side Channel 1 inverting and non-inverting differential outputs. LVDS compatible(1)(2)
O, LVDS Switch B-side Channel 0 inverting and non-inverting differential outputs. LVDS compatible(1)(2)
O, LVDS Switch B-side Channel 1 inverting and non-inverting differential outputs. LVDS compatible(1)(2)
.
.
.
.
SOA_1+
SOA_1−
15
16
SOB_0+
SOB_0−
32
31
SOB_1+
SOB_1−
17
18
LINE SIDE DIFFERENTIAL OUTPUTS
LO_0+
LO_0−
42
41
O, LVDS Line-side Channel 0 inverting and non-inverting differential outputs. LVDS compatible(1)(2)
.
.
LO_1+
LO_1−
7
8
O, LVDS Line-side Channel 1 inverting and non-inverting differential outputs. LVDS compatible(1)(2)
DIGITAL CONTROL INTERFACE
MUX_S0
MUX_S1
38
11
I, LVTTL Mux Select Control Inputs (per channel) to select which Switch-side input, A or B, is passed through
to the Line-side.
ENA_0
ENA_1
ENB_0
ENB_1
36
13
35
14
I, LVTTL Output Enable Control for Switch A-side and B-side outputs. Each output driver on the A-side and B-
side has a separate enable pin.
ENL_0
ENL_1
45
4
I, LVTTL Output Enable Control for The Line-side outputs. Each output driver on the Line-side has a separate
enable pin.
POWER
VDD
6, 12, 37,
43, 48
I, Power VDD = 3.3V ±0.3V.
GND
N/C
2, 3, 46,
47(3)
I, Power Ground reference for LVDS and CMOS circuitry.
For the WQFN package, the DAP is used as the primary GND connection to the device. The DAP is
the exposed metal contact at the bottom of the WQFN-48 package. It should be connected to the
ground plane with at least 4 vias for optimal AC and thermal performance.
1, 5, 23, 24,
25, 26, 44
No Connect
(1) For interfacing LVDS outputs to CML or LVPECL compatible inputs, refer to the APPLICATIONS section of this datasheet.
(2) The LVDS outputs do not support a multidrop (BLVDS) environment. The LVDS output characteristics of the DS08MB200 device have
been optimized for point-to-point backplane and cable applications.
(3) Note that the DAP on the backside of the WQFN package is the primary GND connection for the device when using the WQFN
package.
2
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SNLS197D –MAY 2006–REVISED MARCH 2013
Connection Diagrams
Top View
Top View
12 11 10
13
9
8
7
6
5
4
3
2
1
V
DD
ENA_1
ENB_1
SOA_1+
SOA_1-
SOB_1+
SOB_1-
SIA_1+
SIA_1-
SIB_1+
SIB_1-
N/C
48
VDD
ENA_1
ENB_1
SOA_1+
SOA_1-
SOB_1+
SOB_1-
SIA_1+
SIA_1-
SIB_1+
SIB_1-
N/C
GND
GND
ENL_0
N/C
Channel 1
47
46
45
44
43
42
41
40
39
38
37
14
15
16
17
18
19
20
21
22
23
24
GND
GND
ENL_0
N/C
Channel 0
V
DD
VDD
DAP
(GND)
LO_0+
LO_0-
LI_0+
LO_0+
LO_0-
LI_0+
LI_0-
LI_0-
MUX_S0
MUX_S0
VDD
N/C
V
DD
N/C
25 26 27 28 29 30 31 32 33 34 35 36
Figure 2. WQFN Package
See Package Number RHS0048A
DAP = GND
Figure 3. Directional Signal Paths
(Refer to pin names for signal polarity)
TRI-STATE and Powerdown Modes
The DS08MB200 has output enable control on each of the six onboard LVDS output drivers. This control allows
each output individually to be placed in a low power TRI-STATE mode while the device remains active, and is
useful to reduce power consumption on unused channels. In TRI-STATE mode, some outputs may remain active
while some are in TRI-STATE.
When all six of the output enables (all drivers on both channels) are deasserted (LOW), then the device enters a
Powerdown mode that consumes only 0.5mA (typical) of supply current. In this mode, the entire device is
essentially powered off, including all receiver inputs, output drivers and internal bandgap reference generators.
When returning to active mode from Powerdown mode, there is a delay until valid data is presented at the
outputs because of the ramp to power up the internal bandgap reference generators.
Any single output enable that remains active will hold the device in active mode even if the other five outputs are
in TRI-STATE.
When in Powerdown mode, any output enable that becomes active will wake up the device back into active
mode, even if the other five outputs are in TRI-STATE.
Input Failsafe Biasing
External pull up and pull down resistors may be used to provide enough of an offset to enable an input failsafe
under open-circuit conditions. This configuration ties the positive LVDS input pin to VDD thru a pull up resistor
and the negative LVDS input pin is tied to GND by a pull down resistor. The pull up and pull down resistors
should be in the 5kΩ to 15kΩ range to minimize loading and waveform distortion to the driver. Please refer to
application note SNLA051B AN-1194, “Failsafe Biasing of LVDS Interfaces” for more information.
Output Characteristics
The output characteristics of the DS08MB200 have been optimized for point-to-point backplane and cable
applications, and are not intended for multipoint or multidrop signaling.
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MULTIPLEXER TRUTH TABLE(1)(2)
Data Inputs
Control Inputs
Output
SIA_0
X
SIB_0
MUX_S0
ENL_0
LO_0
SIB_0
SIA_0
Z
valid
X
0
1
X
1
valid
X
1
(3)
X
0
(1) Same functionality for channel 1
(2) X = Don't Care
Z = High Impedance (TRI-STATE)
(3) When all enable inputs from both channels are Low, the device enters a powerdown mode. Refer to the TRI-STATE and Powerdown
Modes section.
REPEATER/BUFFER TRUTH TABLE(1)(2)
Data Input
LI_0
Control Inputs
Outputs
ENA_0
ENB_0
SOA_0
SOB_0
(3)
(3)
X
0
0
1
1
0
1
0
1
Z
Z
valid
Z
LI_0
Z
valid
LI_0
LI_0
valid
LI_0
(1) Same functionality for channel 1
(2) X = Don't Care
Z = High Impedance (TRI-STATE)
(3) When all enable inputs from both channels are Low, the device enters a powerdown mode. Refer to the TRI-STATE and Powerdown
Modes section.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS(1)
Supply Voltage (VDD
)
−0.3V to +4.0V
-0.3V to (VDD+0.3V)
-0.3V to (VDD+0.3V)
-0.3V to (VDD+0.3V)
+40 mA
CMOS Input Voltage
LVDS Receiver Input Voltage(2)
LVDS Driver Output Voltage
LVDS Output Short Circuit Current
Junction Temperature
+150°C
Storage Temperature
−65°C to +150°C
260°C
Lead Temperature (Solder, 4sec)
Max Pkg Power Capacity @ 25°C
5.2W
Thermal Resistance (θJA
)
24°C/W
Package Derating above +25°C
ESD Last Passing Voltage
41.7mW/°C
8kV
HBM, 1.5kΩ, 100pF
LVDS pins to GND only
EIAJ, 0Ω, 200pF
CDM
15kV
250V
1000V
(1) Absolute maximum ratings are those values beyond which damage to the device may occur. Texas Instruments does not recommend
operation of products outside of recommended operation conditions.
(2) VID max < 2.4V
RECOMMENDED OPERATING CONDITIONS
Supply Voltage (VCC
Input Voltage (VI)(1)
Output Voltage (VO)
)
3.0V to 3.6V
0V to VCC
0V to VCC
Operating Temperature (TA)
(1) VID max < 2.4V
Industrial
−40°C to +85°C
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ELECTRICAL CHARACTERISTICS
Over recommended operating supply and temperature ranges unless other specified.
Symbol
Parameter
Conditions
Min
Typ(1)
Max
Units
LVTTL DC SPECIFICATIONS (MUX_Sn, ENA_n, ENB_n, ENL_n)
VIH
VIL
High Level Input Voltage
Low Level Input Voltage
High Level Input Current
Low Level Input Current
Input Capacitance
2.0
GND
−10
−10
VDD
0.8
V
V
IIH
VIN = VDD = VDDMAX
+10
+10
µA
µA
pF
pF
V
IIL
VIN = VSS, VDD = VDDMAX
Any Digital Input Pin to VSS
Any Digital Output Pin to VSS
ICL = −18 mA
CIN1
COUT1
VCL
3.5
5.5
Output Capacitance
Input Clamp Voltage
−1.5
−0.8
LVDS INPUT DC SPECIFICATIONS (SIA±, SIB±, LI±)
VTH
Differential Input High Threshold(2)
VCM = 0.8V or 1.2V or 3.55V,
VDD = 3.6V
0
0
100
mV
mV
VTL
Differential Input Low Threshold(2)
VCM = 0.8V or 1.2V or 3.55V,
VDD = 3.6V
−100
VID
Differential Input Voltage
Common Mode Voltage Range
Input Capacitance
VCM = 0.8V to 3.55V, VDD = 3.6V
VID = 150 mV, VDD = 3.6V
IN+ or IN− to VSS
100
2400
3.55
mV
V
VCMR
CIN2
IIN
0.05
3.5
pF
µA
µA
Input Current
VIN = 3.6V, VDD = VDDMAX
VIN = 0V, VDD = VDDMAX
−15
−15
+15
+15
LVDS OUTPUT DC SPECIFICATIONS (SOA_n±, SOB_n±, LO_n±)
VOD
Differential Output Voltage(2)
RL is the internal 100Ω between OUT+
and OUT−
250
-35
360
500
35
mV
mV
V
ΔVOD
Change in VOD between
Complementary States
Offset Voltage(3)
VOS
1.05
-35
1.22
1.475
35
ΔVOS
Change in VOS between
Complementary States
mV
mA
pF
IOS
Output Short Circuit Current
Output Capacitance
OUT+ or OUT− Short to GND
−21
-40
COUT2
OUT+ or OUT− to GND when TRI-
STATE
5.5
SUPPLY CURRENT (Static)
ICC
Supply Current
All inputs and outputs enabled and
active, terminated with differential load of
100Ω between OUT+ and OUT-.
225
0.6
275
4.0
mA
mA
ICCZ
Supply Current - Powerdown Mode
ENA_0 = ENB_0 = ENL_0= ENA_1 =
ENB_1 = ENL_1 = L
SWITCHING CHARACTERISTICS—LVDS OUTPUTS
tLHT
Differential Low to High Transition
Time
Use an alternating 1 and 0 pattern at 200
170
170
1.0
250
250
2.5
ps
ps
ns
Mb/s, measure between 20% and 80% of
(4)
VOD
.
tHLT
Differential High to Low Transition
Time
tPLHD
tPHLD
Differential Low to High Propagation Use an alternating 1 and 0 pattern at 200
Delay
Mb/s, measure at 50% VOD between
input to output.
Differential High to Low Propagation
Delay
1.0
25
50
2.5
75
ns
ps
ps
(4)
tSKD1
tSKCC
Pulse Skew
|tPLHD–tPHLD|
Output Channel to Channel Skew
Difference in propagation delay (tPLHD or
tPHLD) among all output channels.(4)
115
(1) Typical parameters are measured at VDD = 3.3V, TA = 25°C. They are for reference purposes, and are not production-tested.
(2) Differential output voltage VOD is defined as ABS(OUT+–OUT−). Differential input voltage VID is defined as ABS(IN+–IN−).
(3) Output offset voltage VOS is defined as the average of the LVDS single-ended output voltages at logic high and logic low states.
(4) Not production tested. Ensured by statistical analysis on a sample basis at the time of characterization.
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ELECTRICAL CHARACTERISTICS (continued)
Over recommended operating supply and temperature ranges unless other specified.
Symbol
Parameter
Conditions
Min
Typ(1)
1.3
Max
1.5
34
Units
psrms
psp-p
psp-p
tJIT
Jitter(5)
RJ - Alternating 1 and 0 at 400 MHz(6)
DJ - K28.5 Pattern, 800 Mbps(7)
TJ - PRBS 27-1 Pattern, 800 Mbps(8)
15
16
34
tON
LVDS Output Enable Time
Time from ENA_n, ENB_n, or ENL_n to
OUT± change from TRI-STATE to active.
0.5
10
1.5
20
µs
µs
tON2
tOFF
LVDS Output Enable time from
powerdown mode
Time from ENA_n, ENB_n, or ENL_n to
OUT± change from Powerdown to active
LVDS Output Disable Time
Time from ENA_n, ENB_n, or ENL_n to
OUT± change from active to TRI-STATE
or powerdown.
12
ns
(5) Jitter is not production tested, but ensured through characterization on a sample basis.
(6) Random Jitter, or RJ, is measured RMS with a histogram including 1500 histogram window hits. The input voltage = VID = 500mV, 50%
duty cycle at 400 MHz, tr = tf = 50ps (20% to 80%).
(7) Deterministic Jitter, or DJ, is measured to a histogram mean with a sample size of 350 hits. Stimulus and fixture jitter has been
subtracted. The input voltage = VID = 500mV, K28.5 pattern at 800 Mbps, tr = tf = 50ps (20% to 80%). The K28.5 pattern is repeating bit
streams of (0011111010 1100000101).
(8) Total Jitter, or TJ, is measured peak to peak with a histogram including 3500 window hits. Stimulus and fixture jitter has been subtracted.
The input voltage = VID = 500mV, 27-1 PRBS pattern at 800 Mbps, tr = tf = 50ps (20% to 80%).
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TYPICAL PERFORMANCE CHARACTERISTICS
Power Supply Current vs. Bit Data Rate
350
Total Jitter vs. Temperature
300
250
200
150
100
50
0
0
200
400
600
800
BIT DATA RATE (Mbps)
Total Jitter measured at 0V differential while running a PRBS 27-1
pattern with one channel active, all other channels are disabled. VDD
3.3V, VID = 0.5V, VCM = 1.2V, 800 Mbps data rate. Stimulus and
Dynamic power supply current was measured with all channels active
and toggling at the bit data rate. Data pattern has no effect on the
power consumption. VDD = 3.3V, TA = +25°C, VID = 0.5V, VCM = 1.2V.
=
fixture jitter has been subtracted.
Figure 4.
Figure 5.
Total Jitter vs. Bit Data Rate
Total Jitter measured at 0V differential while running a PRBS 27-1 pattern with one channel active, all other channels are disabled.
VDD = 3.3V, TA = +25°C, VID = 0.5V. Stimulus and fixture jitter has been subtracted.
Figure 6.
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APPLICATIONS
Interfacing LVPECL to LVDS
An LVPECL driver consists of a differential pair with coupled emitters connected to GND via a current source.
This drives a pair of emitter-followers that require a 50 ohm to VCC-2.0 load. A modern LVPECL driver will
typically include the termination scheme within the device for the emitter follower. If the driver does not include
the load, then an external scheme must be used. The 1.3 V supply is usually not readily available on a PCB,
therefore, a load scheme without a unique power supply requirement may be used.
50W
15MB200
LVPECL
50W
R1
R2
150W 150W
Figure 7. DC Coupled LVPECL to LVDS Interface
Figure 7 is a separated π termination scheme for a 3.3 V LVPECL driver. R1 and R2 provides proper DC load for
the driver emitter followers, and may be included as part of the driver device. The DS08MB200 includes a 100
ohm input termination for the transmission line. The common mode voltage will be at the normal LVPECL
levels – around 2 V. This scheme works well with LVDS receivers that have rail-to-rail common mode voltage,
VCM, range. Most Texas Instruments LVDS receivers have wide VCM range. The exceptions are noted in devices’
respective datasheets. Those LVDS devices that do have a wide VCM range do not vary in performance
significantly when receiving a signal with a common mode other than standard LVDS VCM of 1.2 V.
0.1 mF
50W
15MB200
LVPECL
50W
0.1 mF
R1
R2
150W
150W
Figure 8. AC Coupled LVPECL to LVDS Interface
An AC coupled interface is preferred when transmitter and receiver ground references differ more than 1 V. This
is a likely scenario when transmitter and receiver devices are on separate PCBs. Figure 8 illustrates an AC
coupled interface between a LVPECL driver and LVDS receiver. R1 and R2, if not present in the driver device,
provide DC load for the emitter followers and may range between 140-220 ohms for most LVPECL devices for
this particular configuration. The DS08MB200 includes an internal 100 ohm resistor to terminate the transmission
line for minimal reflections. The signal after ac coupling capacitors will swing around a level set by internal
biasing resistors (i.e. fail-safe) which is either VDD/2 or 0 V depending on the actual failsafe implementation. If
internal biasing is not implemented, the signal common mode voltage will slowly wander to GND level.
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Interfacing LVDS to LVPECL
An LVDS driver consists of a current source (nominal 3.5mA) which drives a CMOS differential pair. It needs a
differential resistive load in the range of 70 to 130 ohms to generate LVDS levels. In a system, the load should
be selected to match transmission line characteristic differential impedance so that the line is properly
terminated. The termination resistor should be placed as close to the receiver inputs as possible. When
interfacing an LVDS driver with a non-LVDS receiver, one only needs to bias the LVDS signal so that it is within
the common mode range of the receiver. This may be done by using separate biasing voltage which demands
another power supply. Some receivers have required biasing voltage available on-chip (VT, VTT or VBB).
50W
LVPECL
15MB200
50W
R1
R2
50W
50W
V
T
Figure 9. DC Coupled LVDS to LVPECL Interface
Figure 9 illustrates interface between an LVDS driver and a LVPECL with a VT pin available. R1 and R2, if not
present in the receiver, provide proper resistive load for the driver and termination for the transmission line, and
VT sets desired bias for the receiver.
V
DD
R1
R2
83W
83W
0.1mF
0.1mF
50W
50W
LVPECL
15MB200
R3
R4
130W 130W
Figure 10. AC Coupled LVDS to LVPECL Interface
Figure 10 illustrates AC coupled interface between an LVDS driver and LVPECL receiver without a VT pin
available. The resistors R1, R2, R3, and R4, if not present in the receiver, provide a load for the driver, terminate
the transmission line, and bias the signal for the receiver.
The bias networks shown above for LVPECL drivers and receivers may or may not be present within the driver
device. The LVPECL driver and receiver specification must be reviewed closely to ensure compatibility between
the driver and receiver terminations and common mode operating ranges.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
DS08MB200TSQ/NOPB
DS08MB200TSQX/NOPB
ACTIVE
ACTIVE
WQFN
WQFN
RHS
RHS
48
48
250
RoHS & Green
SN
Level-3-260C-168 HR
Level-3-260C-168 HR
-40 to 85
-40 to 85
08MB200
08MB200
2500 RoHS & Green
SN
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
9-Aug-2022
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
K0
P1
W
B0
Reel
Diameter
Cavity
A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
Overall width of the carrier tape
W
P1 Pitch between successive cavity centers
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2
Q3 Q4
Q1 Q2
Q3 Q4
User Direction of Feed
Pocket Quadrants
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
DS08MB200TSQ/NOPB WQFN
DS08MB200TSQX/NOPB WQFN
RHS
RHS
48
48
250
178.0
330.0
16.4
16.4
7.3
7.3
7.3
7.3
1.3
1.3
12.0
12.0
16.0
16.0
Q1
Q1
2500
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
9-Aug-2022
TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
L
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
DS08MB200TSQ/NOPB
DS08MB200TSQX/NOPB
WQFN
WQFN
RHS
RHS
48
48
250
208.0
356.0
191.0
356.0
35.0
35.0
2500
Pack Materials-Page 2
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