CD74HC259M [TI]

High Speed CMOS Logic 8-Bit Addressable Latch; 高速CMOS逻辑8位可寻址锁存器
CD74HC259M
型号: CD74HC259M
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

High Speed CMOS Logic 8-Bit Addressable Latch
高速CMOS逻辑8位可寻址锁存器

触发器 锁存器 逻辑集成电路 光电二极管
文件: 总9页 (文件大小:65K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
CD74HC259,  
CD74HCT259  
Data sheet acquired from Harris Semiconductor  
SCHS173  
High Speed CMOS Logic  
8-Bit Addressable Latch  
November 1997  
Features  
Description  
• Buffered Inputs and Outputs  
• Four Operating Modes  
• Typical Propagation Delay of 15ns at V  
The Harris CD74HC259 and CD74HCT259 Addressable  
Latch features the low-power consumption associated with  
CMOS circuitry and has speeds comparable to low-power  
Schottky.  
[ /Title  
(CD74  
HC259  
,
CD74  
HCT25  
9)  
= 5V,  
CC  
o
C = 15pF, T = 25 C  
L
A
This latches three active modes and one reset mode. When  
both the Latch Enable (LE) and Master Reset (MR) inputs are  
low (8-line Demultiplexer mode) the output of the addressed  
latch follows the Data input and all other outputs are forced  
low. When both MR and LE are high (Memory Mode), all  
• Fanout (Over Temperature Range)  
- Standard Outputs. . . . . . . . . . . . . . . 10 LSTTL Loads  
- Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads  
o
o
• Wide Operating Temperature Range . . . -55 C to 125 C outputs are isolated from the Data input, i.e., all latches hold  
the last data presented before the LE transition from low to  
high. A condition of LE low and MR high (Addressable Latch  
mode) allows the addressed latch’s output to follow the data  
input; all other latches are unaffected. The Reset mode (all  
outputs low) results when LE is high and MR is low.  
/Sub-  
ject  
• Balanced Propagation Delay and Transition Times  
• Significant Power Reduction Compared to LSTTL  
Logic ICs  
(High  
Speed  
CMOS  
Logic  
8-Bit  
Addres  
sable  
Latch)  
• HC Types  
- 2V to 6V Operation  
Ordering Information  
- High Noise Immunity: N = 30%, N = 30% of V  
IL IH CC  
at V  
= 5V  
PKG.  
CC  
o
PART NUMBER TEMP. RANGE ( C) PACKAGE  
NO.  
E16.3  
E16.3  
• HCT Types  
CD74HC259E  
CD74HCT259E  
CD74HC259M  
CD74HCT259M  
NOTES:  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
16 Ld PDIP  
16 Ld PDIP  
- 4.5V to 5.5V Operation  
- Direct LSTTL Input Logic Compatibility,  
V = 0.8V (Max), V = 2V (Min)  
IL IH  
16 Ld SOIC M16.15  
16 Ld SOIC M16.15  
- CMOS Input Compatibility, I 1µA at V , V  
OL OH  
l
1. When ordering, use the entire part number. Add the suffix 96 to  
obtain the variant in the tape and reel.  
2. Wafer or die for this part number is available which meets all elec-  
trical specifications. Please contact your local sales office or  
Harris customer service for ordering information.  
Pinout  
CD74HC259, CD74HCT259  
(PDIP, SOIC)  
TOP VIEW  
A0  
A1  
1
2
3
4
5
6
7
8
16 V  
CC  
15 MR  
14 LE  
13 D  
A2  
Q0  
Q1  
12 Q7  
11 Q6  
10 Q5  
Q2  
Q3  
9
Q4  
GND  
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.  
File Number 1727.1  
Copyright © Harris Corporation 1997  
1
CD74HC259, CD74HCT259  
Functional Diagram  
4
Q0  
1
5
A
A
A
0
1
2
Q1  
Q2  
Q3  
Q4  
Q5  
Q6  
Q7  
8
6
2
3
1-OF-8  
DECODER  
LATCHES  
7
9
10  
11  
12  
14  
LE  
15  
13  
MR  
D
GND = 8  
= 16  
V
CC  
TRUTH TABLE  
OUTPUT OF  
LATCH SELECTION TABLE  
SELECT INPUTS  
INPUTS  
LATCH  
ADDRESS  
LATCH  
EACH OTHER  
OUTPUT  
A2  
L
A1  
L
A0  
L
ADDRESSED  
MR  
LE  
FUNCTION  
0
1
2
3
4
5
6
7
H
L
D
Q
Addressable  
Latch  
io  
L
L
H
L
L
H
H
L
H
L
H
L
Q
Q
Memory  
io  
io  
L
H
L
D
L
8-Line  
Demultiplexer  
H
H
H
H
L
H
L
L
H
L
L
Reset  
H
H
NOTE:  
H
H
L
= High Voltage Level  
= Low Voltage Level  
D
Q
= The level at the data input  
= The level of Q (i = 0, 1...7, as appropriate) before the indicated  
io  
i
steady-state input conditions were established.  
2
CD74HC259, CD74HCT259  
Absolute Maximum Ratings  
Thermal Information  
o
DC Supply Voltage, V  
. . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V  
Thermal Resistance (Typical, Note 3)  
θ
( C/W)  
CC  
DC Input Diode Current, I  
For V < -0.5V or V > V  
JA  
IK  
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
SOIC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
90  
+ 0.5V. . . . . . . . . . . . . . . . . . . . . .±20mA  
OK  
For V < -0.5V or V > V  
I
I
CC  
115  
o
DC Output Diode Current, I  
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150 C  
Maximum Storage Temperature Range . . . . . . . . . .-65 C to 150 C  
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . . 300 C  
o
o
+ 0.5V . . . . . . . . . . . . . . . . . . . .±20mA  
O
O
CC  
o
DC Drain Current, per Output, I  
O
For -0.5V < V < V  
+ 0.5V. . . . . . . . . . . . . . . . . . . . . . . . . .±25mA  
O
CC  
(SOIC - Lead Tips Only)  
DC Output Source or Sink Current per Output Pin, I  
O
For V > -0.5V or V < V  
+ 0.5V . . . . . . . . . . . . . . . . . . . .±25mA  
O
O
CC  
DC V  
or Ground Current, I  
I
. . . . . . . . . . . . . . . . . .±50mA  
CC  
CC or GND  
Operating Conditions  
o
o
Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . -55 C to 125 C  
A
Supply Voltage Range, V  
CC  
HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V  
HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V  
DC Input or Output Voltage, V , V . . . . . . . . . . . . . . . . . 0V to V  
I
O
CC  
Input Rise and Fall Time  
2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max)  
4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max)  
6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max)  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation  
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
NOTE:  
3. θ is measured with the component mounted on an evaluation PC board in free air.  
JA  
DC Electrical Specifications  
TEST  
CONDITIONS  
o
o
o
o
o
25 C  
TYP  
-40 C TO 85 C -55 C TO 125 C  
V
(V)  
CC  
PARAMETER  
HC TYPES  
SYMBOL  
V (V)  
I
I
(mA)  
MIN  
MAX  
MIN  
MAX  
MIN  
MAX  
UNITS  
O
High Level Input  
Voltage  
V
-
-
-
2
4.5  
6
1.5  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.5  
-
1.5  
-
-
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
µA  
IH  
3.15  
-
-
3.15  
-
-
3.15  
4.2  
4.2  
4.2  
-
Low Level Input  
Voltage  
V
-
2
-
0.5  
1.35  
1.8  
-
-
0.5  
1.35  
1.8  
-
-
0.5  
1.35  
1.8  
-
IL  
4.5  
6
-
-
-
-
-
-
High Level Output  
Voltage  
CMOS Loads  
V
V
or V  
IH IL  
-0.02  
2
1.9  
1.9  
1.9  
OH  
-0.02  
-0.02  
-
4.5  
6
4.4  
-
4.4  
-
4.4  
-
5.9  
-
5.9  
-
5.9  
-
High Level Output  
Voltage  
TTL Loads  
-
-
-
-
-
-
-
-4  
4.5  
6
3.98  
-
3.84  
-
3.7  
-
-5.2  
0.02  
0.02  
0.02  
-
5.48  
-
5.34  
-
5.2  
-
Low Level Output  
Voltage  
CMOS Loads  
V
V
or V  
IH IL  
2
-
-
-
-
-
-
-
0.1  
0.1  
0.1  
-
-
-
-
-
-
-
-
0.1  
0.1  
0.1  
-
-
-
-
-
-
-
-
0.1  
0.1  
0.1  
-
OL  
4.5  
6
Low Level Output  
Voltage  
TTL Loads  
-
4
4.5  
6
0.26  
0.26  
±0.1  
0.33  
0.33  
±1  
0.4  
0.4  
±1  
5.2  
-
Input Leakage  
Current  
I
V
or  
6
I
CC  
GND  
3
CD74HC259, CD74HCT259  
DC Electrical Specifications (Continued)  
TEST  
CONDITIONS  
o
o
o
o
o
25 C  
-40 C TO 85 C -55 C TO 125 C  
V
CC  
PARAMETER  
SYMBOL  
V (V)  
I
(mA)  
O
(V)  
MIN  
TYP  
MAX  
MIN  
MAX  
MIN  
MAX  
UNITS  
I
Quiescent Device  
Current  
I
V
GND  
or  
0
6
-
-
8
-
80  
-
160  
µA  
CC  
CC  
HCT TYPES  
High Level Input  
Voltage  
V
-
-
-
-
4.5 to  
5.5  
2
-
-
-
-
-
0.8  
-
2
-
-
0.8  
-
2
-
-
0.8  
-
V
V
V
IH  
Low Level Input  
Voltage  
V
4.5 to  
5.5  
IL  
High Level Output  
Voltage  
CMOS Loads  
V
V
V
or V  
-0.02  
4.5  
4.5  
4.5  
4.5  
4.4  
4.4  
4.4  
OH  
IH  
IH  
IL  
High Level Output  
Voltage  
TTL Loads  
-4  
3.98  
-
-
-
-
3.84  
-
3.7  
-
V
V
V
Low Level Output  
Voltage  
CMOS Loads  
V
or V  
0.02  
4
-
-
0.1  
0.26  
-
-
0.1  
0.33  
-
-
0.1  
0.4  
OL  
IL  
Low Level Output  
Voltage  
TTL Loads  
Input Leakage  
Current  
I
V
and  
0
0
-
5.5  
5.5  
-
-
-
±0.1  
8
-
-
-
±1  
80  
-
-
-
±1  
µA  
µA  
µA  
I
CC  
GND  
Quiescent Device  
Current  
I
V
or  
-
160  
490  
CC  
CC  
GND  
Additional Quiescent  
Device Current Per  
Input Pin: 1 Unit Load  
I  
CC  
V
4.5 to  
5.5  
100  
360  
450  
CC  
-2.1  
NOTE: For dual-supply systems theoretical worst case (V = 2.4V, V  
I
= 5.5V) specification is 1.8mA.  
CC  
HCT Input Loading Table  
INPUT  
A0 - A2, LE  
D
UNIT LOADS  
1.5  
1.2  
0.75  
MR  
NOTE: Unit Load is I  
360µA max at 25 C.  
limit specified in DC Electrical Table, e.g.,  
CC  
o
Prerequisite for Switching Specifications  
o
o
o
o
o
25 C  
-40 C TO 85 C  
-55 C TO 125 C  
PARAMETER  
HC TYPES  
SYMBOL  
V
(V) MIN  
TYP  
MAX  
MIN  
TYP  
MAX  
MIN  
TYP  
MAX UNITS  
CC  
Pulse Width  
LE  
t
WL  
2
70  
-
-
-
-
-
-
90  
18  
15  
-
-
-
-
-
-
105  
21  
-
-
-
-
-
-
ns  
ns  
ns  
4.5  
6
14  
12  
18  
4
CD74HC259, CD74HCT259  
Prerequisite for Switching Specifications (Continued)  
o
o
o
o
o
25 C  
-40 C TO 85 C  
-55 C TO 125 C  
PARAMETER  
MR  
SYMBOL  
V
(V) MIN  
TYP  
MAX  
MIN  
TYP  
MAX  
MIN  
TYP  
MAX UNITS  
CC  
t
2
70  
-
-
-
-
-
-
90  
18  
15  
-
-
-
-
-
-
105  
21  
-
-
-
-
-
-
ns  
ns  
ns  
WL  
4.5  
6
14  
12  
18  
Setup Time  
t
SU  
D to LE  
A to LE  
2
4.5  
6
80  
16  
14  
-
-
-
-
-
-
100  
20  
-
-
-
-
-
-
120  
24  
-
-
-
-
-
-
ns  
ns  
ns  
17  
20  
Hold Time  
t
H
D to LE  
A to LE  
2
4.5  
6
0
0
0
-
-
-
-
-
-
0
0
0
-
-
-
-
-
-
0
0
0
-
-
-
-
-
-
ns  
ns  
ns  
HCT TYPES  
Pulse Width  
LE  
MR  
t
4.5  
4.5  
4.5  
18  
17  
0
-
-
-
-
-
-
23  
21  
0
-
-
-
-
-
-
27  
26  
0
-
-
-
-
-
-
ns  
ns  
ns  
WL  
Setup Time  
D to LE  
A to LE  
t
SU  
Hold Time  
D to LE  
t
H
A to LE  
Switching Specifications C = 50pF, Input t , t = 6ns  
L
r f  
o
o
-40 C TO  
-55 C TO  
o
o
o
25 C  
85 C  
125 C  
TEST  
SYMBOL CONDITIONS  
PARAMETER  
HC TYPES  
V
(V) MIN  
TYP MAX  
MIN  
MAX  
MIN  
MAX UNITS  
CC  
Propagation Delay  
D to Q  
t
PHL  
C
= 50pF  
L
2
-
-
-
185  
37  
-
-
-
-
-
-
-
-
-
230  
46  
-
-
-
-
-
-
-
-
-
280  
56  
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
4.5  
5
-
-
-
-
-
-
-
C
C
C
= 15pF  
= 50pF  
= 50pF  
15  
-
L
L
L
6
31  
170  
34  
-
39  
215  
43  
-
48  
255  
51  
-
LE to Q  
t
2
-
PHL  
4.5  
5
-
C
C
= 15pF  
= 50pF  
14  
-
L
6
29  
37  
43  
L
5
CD74HC259, CD74HCT259  
Switching Specifications C = 50pF, Input t , t = 6ns (Continued)  
L
r f  
o
o
-40 C TO  
-55 C TO  
o
o
o
25 C  
85 C  
125 C  
TEST  
SYMBOL CONDITIONS  
PARAMETER  
A to Q  
V
(V) MIN  
TYP MAX  
MIN  
MAX  
MIN  
MAX UNITS  
CC  
t
C
= 50pF  
2
-
-
-
185  
37  
-
-
-
-
-
-
-
-
-
-
-
-
-
230  
46  
-
-
-
-
-
-
-
-
-
-
-
-
-
280  
56  
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
pF  
PHL  
L
4.5  
5
-
-
-
-
-
-
-
-
-
-
-
C
C
C
= 15pF  
= 50pF  
= 50pF  
15  
-
L
L
L
6
31  
155  
31  
-
39  
195  
39  
-
48  
235  
47  
-
MR to Q  
t
t
2
-
PHL, PLH  
4.5  
5
-
C
C
C
= 15pF  
= 50pF  
= 50pF  
13  
-
L
L
L
6
26  
75  
15  
13  
-
33  
95  
19  
16  
-
40  
110  
22  
19  
-
Output Transition Time  
t
, t  
THL TLH  
2
-
4.5  
6
-
-
Power Dissipation Capacitance  
(Notes 4, 5)  
C
C
C
= 15pF  
= 50pF  
5
21  
PD  
L
Input Capacitance  
C
-
10  
-
10  
-
10  
-
10  
pF  
I
L
HCT TYPES  
Propagation Delay  
D to Q  
t
t
PHL, PLH  
C
C
C
C
C
C
C
C
C
= 50pF  
= 15pF  
= 50pF  
= 15pF  
= 50pF  
= 15pF  
= 50pF  
= 15pF  
= 15pF  
4.5  
5
-
-
-
-
-
-
-
-
-
-
39  
-
-
-
-
-
-
-
-
-
-
49  
-
-
-
-
-
-
-
-
-
-
59  
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
pF  
L
L
L
L
L
L
L
L
L
16  
-
LE to Q  
A to Q  
4.5  
5
38  
-
48  
-
57  
-
16  
-
4.5  
5
41  
-
51  
-
61  
-
17  
-
MR to Q  
4.5  
5
39  
-
49  
-
59  
-
16  
22  
Power Dissipation Capacitance  
(Notes 4, 5)  
C
5
-
-
-
PD  
Input Capacitance  
Output Transition Time  
NOTES:  
C
C
C
= 50pF  
= 50pF  
-
10  
-
-
-
10  
15  
-
-
10  
19  
-
-
10  
22  
pF  
ns  
I
L
t
, t  
THL TLH  
4.5  
L
4. C  
is used to determine the dynamic power consumption, per package.  
PD  
2
2
5. P = C  
V
f + C V  
f where f = Input Frequency, f = Output Frequency, C = Output Load Capacitance,  
CC O i O L  
D
PD CC  
i
L
V
= Supply Voltage.  
CC  
6
CD74HC259, CD74HCT259  
Test Circuits and Waveforms  
I
t
+ t =  
WH  
WL  
I
t C = 6ns  
fC  
r
L
t
+ t  
=
L
WL  
WH  
t C = 6ns  
t C  
f
L
fC  
t C  
f
L
L
r
L
3V  
V
CC  
90%  
10%  
2.7V  
0.3V  
CLOCK  
CLOCK  
50%  
10%  
1.3V  
0.3V  
50%  
t
50%  
1.3V  
t
1.3V  
GND  
GND  
t
t
WH  
WL  
WH  
WL  
NOTE: Outputs should be switching from 10% V  
to 90% V  
in  
NOTE: Outputs should be switching from 10% V  
to 90% V  
in  
CC  
CC  
CC  
CC  
accordance with device truth table. For f  
, input duty cycle = 50%.  
accordance with device truth table. For f  
, input duty cycle = 50%.  
MAX  
MAX  
FIGURE 1. HC CLOCK PULSE RISE AND FALL TIMES AND  
PULSE WIDTH  
FIGURE 2. HCT CLOCK PULSE RISE AND FALL TIMES AND  
PULSE WIDTH  
t = 6ns  
t = 6ns  
t = 6ns  
t = 6ns  
r
f
r
f
V
3V  
CC  
90%  
50%  
10%  
2.7V  
1.3V  
0.3V  
INPUT  
INPUT  
GND  
GND  
t
t
t
t
THL  
TLH  
THL  
TLH  
90%  
1.3V  
90%  
50%  
10%  
INVERTING  
OUTPUT  
INVERTING  
OUTPUT  
10%  
t
t
PLH  
PHL  
t
t
PLH  
PHL  
FIGURE 3. HC TRANSITION TIMES AND PROPAGATION  
DELAY TIMES, COMBINATION LOGIC  
FIGURE 4. HCT TRANSITION TIMES AND PROPAGATION  
DELAY TIMES, COMBINATION LOGIC  
t C  
t C  
t C  
t C  
r
L
f
L
f
L
r
L
V
3V  
CC  
90%  
10%  
2.7V  
0.3V  
CLOCK  
INPUT  
CLOCK  
INPUT  
50%  
1.3V  
GND  
GND  
t
t
t
t
H(L)  
H(H)  
H(H)  
H(L)  
V
3V  
CC  
DATA  
INPUT  
DATA  
INPUT  
50%  
1.3V  
t
SU(L)  
1.3V  
1.3V  
GND  
GND  
t
t
t
SU(H)  
SU(H)  
SU(L)  
t
t
90%  
50%  
t
t
THL  
TLH  
THL  
TLH  
90%  
1.3V  
90%  
90%  
1.3V  
OUTPUT  
OUTPUT  
10%  
10%  
t
t
t
PLH  
t
PHL  
PHL  
PLH  
t
REM  
t
REM  
V
3V  
CC  
SET, RESET  
OR PRESET  
SET, RESET  
OR PRESET  
50%  
1.3V  
GND  
GND  
IC  
IC  
C
C
L
L
50pF  
50pF  
FIGURE 5. HC SETUP TIMES, HOLD TIMES, REMOVAL TIME,  
AND PROPAGATION DELAY TIMES FOR EDGE  
TRIGGERED SEQUENTIAL LOGIC CIRCUITS  
FIGURE 6. HCT SETUP TIMES, HOLD TIMES, REMOVAL TIME,  
AND PROPAGATION DELAY TIMES FOR EDGE  
TRIGGERED SEQUENTIAL LOGIC CIRCUITS  
7
CD74HC259, CD74HCT259  
Test Circuits and Waveforms (Continued)  
6ns  
6ns  
t
6ns  
t
6ns  
r
f
V
3V  
CC  
OUTPUT  
DISABLE  
OUTPUT  
DISABLE  
90%  
2.7  
50%  
t
1.3  
10%  
0.3  
GND  
GND  
t
t
t
t
PZL  
PZL  
PLZ  
PLZ  
OUTPUT LOW  
TO OFF  
OUTPUT LOW  
TO OFF  
50%  
50%  
1.3V  
10%  
90%  
10%  
90%  
t
t
PZH  
PHZ  
PHZ  
t
PZH  
OUTPUT HIGH  
TO OFF  
OUTPUT HIGH  
TO OFF  
1.3V  
OUTPUTS  
ENABLED  
OUTPUTS  
ENABLED  
OUTPUTS  
DISABLED  
OUTPUTS  
ENABLED  
OUTPUTS  
DISABLED  
OUTPUTS  
ENABLED  
FIGURE 7. HC THREE-STATE PROPAGATION DELAY  
WAVEFORM  
FIGURE 8. HCT THREE-STATE PROPAGATION DELAY  
WAVEFORM  
OTHER  
OUTPUT  
= 1kΩ  
INPUTS  
TIED HIGH  
OR LOW  
IC WITH  
THREE-  
STATE  
R
L
V
FOR t AND t  
PLZ  
CC  
GND FOR t  
PZL  
AND t  
PHZ  
PZH  
C
L
OUTPUT  
50pF  
OUTPUT  
DISABLE  
NOTE: Open drain waveforms t  
and t are the same as those for three-state shown on the left. The test circuit is Output R = 1kto  
PZL L  
PLZ  
V
, C = 50pF.  
CC  
L
FIGURE 9. HC AND HCT THREE-STATE PROPAGATION DELAY TEST CIRCUIT  
8
IMPORTANT NOTICE  
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue  
any product or service without notice, and advise customers to obtain the latest version of relevant information  
to verify, before placing orders, that information being relied on is current and complete. All products are sold  
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those  
pertaining to warranty, patent infringement, and limitation of liability.  
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in  
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent  
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily  
performed, except those mandated by government requirements.  
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF  
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL  
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR  
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER  
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO  
BE FULLY AT THE CUSTOMER’S RISK.  
In order to minimize risks associated with the customer’s applications, adequate design and operating  
safeguards must be provided by the customer to minimize inherent or procedural hazards.  
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent  
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other  
intellectual property right of TI covering or relating to any combination, machine, or process in which such  
semiconductor products or services might be or are used. TI’s publication of information regarding any third  
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Copyright 1998, Texas Instruments Incorporated  

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