CD54HC367F3A [TI]

High-Speed CMOS Logic Hex Buffer/Line Driver, Three-State Non-Inverting and Inverting; 高速CMOS逻辑六角缓冲器/线路驱动器,三态非反相和反相
CD54HC367F3A
型号: CD54HC367F3A
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

High-Speed CMOS Logic Hex Buffer/Line Driver, Three-State Non-Inverting and Inverting
高速CMOS逻辑六角缓冲器/线路驱动器,三态非反相和反相

总线驱动器 总线收发器 逻辑集成电路
文件: 总11页 (文件大小:270K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
CD54/74HC367, CD54/74HCT367,  
CD54/74HC368, CD74HCT368  
Data sheet acquired from Harris Semiconductor  
SCHS181D  
High-Speed CMOS Logic Hex Buffer/Line Driver,  
Three-State Non-Inverting and Inverting  
November 1997 - Revised October 2003  
Features  
Ordering Information  
TEMP. RANGE  
o
• Buffered Inputs  
PART NUMBER  
CD54HC367F3A  
CD54HC368F3A  
CD54HCT367F3A  
CD74HC367E  
( C)  
PACKAGE  
16 Ld CERDIP  
16 Ld CERDIP  
16 Ld CERDIP  
16 Ld PDIP  
16 Ld SOIC  
16 Ld SOIC  
16 Ld SOIC  
16 Ld PDIP  
16 Ld SOIC  
16 Ld SOIC  
16 Ld SOIC  
16 Ld PDIP  
16 Ld SOIC  
16 Ld SOIC  
16 Ld SOIC  
16 Ld PDIP  
16 Ld SOIC  
16 Ld SOIC  
16 Ld SOIC  
• High Current Bus Driver Outputs  
• Two Independent Three-State Enable Controls  
[ /Title  
(CD74  
HC367  
,
CD74  
HCT36  
7,  
CD74  
HC368  
,
CD74  
HCT36  
8)  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
• Typical Propagation Delay t  
, t  
= 8ns at V = 5V,  
CC  
PLH PHL  
o
C = 15pF, T = 25 C  
L
A
CD74HC367M  
• Fanout (Over Temperature Range)  
CD74HC367MT  
CD74HC367M96  
CD74HC368E  
- Standard Outputs. . . . . . . . . . . . . . . 10 LSTTL Loads  
- Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads  
o
o
• Wide Operating Temperature Range . . . -55 C to 125 C  
• Balanced Propagation Delay and Transition Times  
CD74HC368M  
CD74HC368MT  
CD74HC368M96  
CD74HCT367E  
CD74HCT367M  
CD74HCT367MT  
CD74HCT367M96  
CD74HCT368E  
CD74HCT368M  
CD74HCT368MT  
CD74HCT368M96  
• Significant Power Reduction Compared to LSTTL  
Logic ICs  
• HC Types  
- 2V to 6V Operation  
/Sub-  
ject  
(High  
Speed  
- High Noise Immunity: N = 30%, N = 30% of V  
CC  
IL  
IH  
at V  
= 5V  
CC  
• HCT Types  
- 4.5V to 5.5V Operation  
- Direct LSTTL Input Logic Compatibility,  
V = 0.8V (Max), V = 2V (Min)  
IL IH  
NOTE: When ordering, use the entire part number. The suffix 96  
denotes tape and reel. The suffix T denotes a small-quantity reel of  
250.  
- CMOS Input Compatibility, I 1µA at V , V  
OL OH  
l
Description  
The ’HC367, ’HCT367, ’HC368, and CD74HCT368 silicon gate  
CMOS three-state buffers are general purpose high-speed  
non-inverting and inverting buffers. They have high drive cur-  
rent outputs which enable high speed operation even when  
driving large bus capacitances. These circuits possess the low  
power dissipation of CMOS circuitry, yet have speeds compara-  
ble to low power Schottky TTL circuits. Both circuits are capable  
of driving up to 15 low power Schottky inputs.  
The ’HC367 and ’HCT367 are non-inverting buffers, whereas  
the ’HC368 and CD74HCT368 are inverting buffers. These  
devices have two output enables, one enable (OE1) controls 4  
gates and the other (OE2) controls the remaining 2 gates.  
The ’HCT367 and CD74HCT368 logic families are speed, func-  
tion and pin compatible with the standard LS logic family.  
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.  
Copyright © 2003, Texas Instruments Incorporated  
1
CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368  
Pinouts  
CD54HC367, CD54HCT367  
(CERDIP)  
CD54HC368  
(CERDIP)  
CD74HC367, CD74HCT367  
(PDIP, SOIC)  
CD74HC368, CD74HCT368  
(PDIP, SOIC)  
TOP VIEW  
TOP VIEW  
OE1  
1A  
1
2
3
4
5
6
7
8
16 V  
OE1  
1A  
1
2
3
4
5
6
7
8
16 V  
CC  
CC  
15 OE2  
14 6A  
13 6Y  
12 5A  
11 5Y  
10 4A  
15 OE2  
14 6A  
13 6Y  
12 5A  
11 5Y  
10 4A  
1Y  
1Y  
2A  
2A  
2Y  
2Y  
3A  
3A  
3Y  
3Y  
9
4Y  
9 4Y  
GND  
GND  
Functional Diagrams  
HC367, HCT367  
HC368, CD74HCT368  
1
1
16  
16  
V
V
CC  
OE1  
OE1  
CC  
15  
14  
15  
14  
2
3
2
3
OE2  
6A  
OE2  
6A  
1A  
1Y  
1A  
1Y  
13  
12  
13  
12  
4
4
6Y  
5A  
6Y  
2A  
2Y  
2A  
2Y  
3A  
5
6
5
6
5A  
5Y  
4A  
11  
10  
11  
10  
3A  
3Y  
5Y  
4A  
7
8
7
8
3Y  
9
9
GND  
4Y  
GND  
4Y  
TRUTH TABLE  
OUTPUTS  
(Y)  
INPUTS  
OE  
L
A
HC/HCT367  
HC/HCT368  
L
H
X
L
H
H
L
L
H
(Z)  
(Z)  
H = High Voltage Level  
L = Low Voltage Level  
X = Don’t Care  
Z = High Impedance (OFF) State  
2
CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368  
Logic Diagram  
V
CC  
16  
ONE OF SIX IDENTICAL CIRCUITS  
2
1A  
3
(NOTE 1)  
1Y  
GND  
8
1
OE1  
OE2  
4
5
2A  
3A  
4A  
5A  
6A  
15  
2Y  
3Y  
4Y  
5Y  
6Y  
6
7
9
10  
12  
14  
11  
13  
NOTE:  
1. Inverter not included in HC/HCT367  
FIGURE 1. LOGIC DIAGRAM FOR THE HC/HCT367 AND HC/HCT368 (OUTPUTS FOR HC/HCT367 ARE COMPLEMENTS OF  
THOSE SHOWN, i.e., 1Y, 2Y, ETC.)  
3
CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368  
Absolute Maximum Ratings  
Thermal Information  
o
DC Supply Voltage, V  
. . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V  
Thermal Resistance (Typical, Note 2)  
θ
( C/W)  
CC  
DC Input Diode Current, I  
For V < -0.5V or V > V  
JA  
IK  
E (PDIP) Package . . . . . . . . . . . . . . . . . . . . . . . . . .  
M (SOIC) Package. . . . . . . . . . . . . . . . . . . . . . . . . .  
67  
73  
+ 0.5V. . . . . . . . . . . . . . . . . . . . . .±20mA  
OK  
For V < -0.5V or V > V  
I
I
CC  
o
DC Output Diode Current, I  
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150 C  
Maximum Storage Temperature Range . . . . . . . . . .-65 C to 150 C  
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . . 300 C  
o
o
+ 0.5V . . . . . . . . . . . . . . . . . . . .±20mA  
O
O
CC  
o
DC Drain Current, per Output, I  
O
For -0.5V < V < V  
+ 0.5V. . . . . . . . . . . . . . . . . . . . . . . . . .±35mA  
O
CC  
(SOIC - Lead Tips Only)  
DC V  
CC  
or Ground Current, I  
. . . . . . . . . . . . . . . . . . . . . . . . .±50mA  
CC  
Operating Conditions  
o
o
Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . -55 C to 125 C  
A
Supply Voltage Range, V  
CC  
HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V  
HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V  
DC Input or Output Voltage, V , V . . . . . . . . . . . . . . . . . 0V to V  
I
O
CC  
Input Rise and Fall Time  
2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max)  
4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max)  
6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max)  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation  
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
NOTE:  
2. The package thermal impedance is calculated in accordance with JESD 51-7.  
DC Electrical Specifications  
TEST  
CONDITIONS  
o
o
o
o
o
25 C  
-40 C TO 85 C  
-55 C TO 125 C  
PARAMETER  
HC TYPES  
SYMBOL V (V)  
I
(mA)  
V
(V) MIN TYP MAX  
MIN  
MAX  
MIN  
MAX  
UNITS  
I
O
CC  
High Level Input  
Voltage  
V
-
-
-
2
1.5  
3.15  
4.2  
-
-
-
-
-
-
-
-
-
-
-
-
-
1.5  
3.15  
4.2  
-
-
1.5  
3.15  
4.2  
-
-
V
V
V
V
V
V
V
V
V
V
V
IH  
4.5  
-
-
-
6
2
-
-
-
Low Level Input  
Voltage  
V
-
0.5  
0.5  
0.5  
IL  
4.5  
6
-
1.35  
-
1.35  
-
1.35  
-
1.8  
-
1.8  
-
1.8  
High Level Output  
Voltage  
CMOS Loads  
V
V
V
or  
-0.02  
2
1.9  
4.4  
5.9  
3.98  
5.48  
-
-
-
-
-
1.9  
4.4  
5.9  
3.84  
5.34  
-
-
-
-
-
1.9  
4.4  
5.9  
3.7  
5.2  
-
-
-
-
-
OH  
IH  
V
IL  
-0.02  
-0.02  
-6  
4.5  
6
High Level Output  
Voltage  
TTL Loads  
4.5  
6
-7.8  
Low Level Output  
Voltage  
CMOS Loads  
V
or  
0.02  
0.02  
0.02  
6
2
4.5  
6
-
-
-
-
-
-
-
-
-
-
0.1  
0.1  
-
-
-
-
-
0.1  
0.1  
-
-
-
-
-
0.1  
0.1  
0.1  
0.4  
0.4  
V
V
V
V
V
OL  
IH  
V
IL  
0.1  
0.1  
Low Level Output  
Voltage  
TTL Loads  
4.5  
6
0.26  
0.26  
0.33  
0.33  
7.8  
Input Leakage  
Current  
I
V
or  
-
6
6
6
-
-
-
-
-
-
±0.1  
8
-
-
-
±1  
80  
-
-
-
±1  
µA  
µA  
µA  
I
CC  
GND  
Quiescent Device  
Current  
I
V
or  
0
160  
±10  
CC  
CC  
GND  
Three-State Leakage  
Current  
I
V
or  
V =  
O
±0.5  
±5.0  
OZ  
IL  
V
V
or  
IH  
CC  
GND  
4
CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368  
DC Electrical Specifications  
(Continued)  
TEST  
CONDITIONS  
o
o
o
o
o
25 C  
-40 C TO 85 C  
-55 C TO 125 C  
PARAMETER  
HCT TYPES  
SYMBOL V (V)  
I
(mA)  
V (V) MIN TYP MAX  
CC  
MIN  
MAX  
MIN  
MAX  
UNITS  
I
O
High Level Input  
Voltage  
V
-
-
-
-
4.5 to  
5.5  
2
-
-
-
-
-
0.8  
-
2
-
-
0.8  
-
2
-
-
0.8  
-
V
V
V
IH  
Low Level Input  
Voltage  
V
4.5 to  
5.5  
IL  
High Level Output  
Voltage  
CMOS Loads  
V
V
V
or  
-0.02  
4.5  
4.5  
4.5  
4.5  
4.4  
4.4  
4.4  
OH  
IH  
V
IL  
High Level Output  
Voltage  
TTL Loads  
-4  
3.98  
-
-
-
-
3.84  
-
3.7  
-
V
V
V
Low Level Output  
Voltage  
CMOS Loads  
V
or  
0.02  
4
-
-
0.1  
0.26  
-
-
0.1  
0.33  
-
-
0.1  
0.4  
OL  
IH  
V
IL  
Low Level Output  
Voltage  
TTL Loads  
Input Leakage  
Current  
I
V
to  
0
0
-
5.5  
5.5  
-
-
-
-
-
±0.1  
8
-
-
-
±1  
80  
-
-
-
±1  
µA  
µA  
µA  
I
CC  
GND  
Quiescent Device  
Current  
I
V
or  
160  
490  
CC  
CC  
GND  
Additional Quiescent  
Device Current Per  
Input Pin: 1 Unit Load  
I  
CC  
(Note 3)  
V
4.5 to  
5.5  
100  
360  
450  
CC  
-2.1  
Three-State Leakage  
Current  
I
V
V
or  
V =  
O
5.5  
-
-
±0.5  
-
±5.0  
-
±10  
µA  
OZ  
IL  
V
or  
IH  
CC  
GND  
NOTE:  
3. For dual-supply systems theoretical worst case (V = 2.4V, V  
I
= 5.5V) specification is 1.8mA.  
CC  
HCT Input Loading Table  
INPUT  
OE1  
UNIT LOADS  
0.6  
All Others  
0.55  
NOTE: Unit Load is I  
Specifications table, e.g., 360µA max at 25 C.  
limit specified in DC Electrical  
o
CC  
Switching Specifications Input t , t = 6ns  
r
f
o
-55 C TO  
125 C  
o
o
o
o
25 C  
-40 C TO 85 C  
MAX  
TEST  
PARAMETER  
HC TYPES  
SYMBOL  
CONDITIONS  
V
(V)  
TYP  
MAX  
MAX  
UNITS  
CC  
Propagation Delay,  
Data to Outputs  
HC/HCT367  
t
, t  
C = 50pF  
2
-
-
105  
21  
18  
-
130  
26  
24  
-
160  
32  
27  
-
ns  
ns  
ns  
ns  
PLH PHL  
L
4.5  
6
5
-
C = 15pF  
8
L
5
CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368  
Switching Specifications Input t , t = 6ns (Continued)  
r
f
o
-55 C TO  
125 C  
o
o
o
o
25 C  
-40 C TO 85 C  
TEST  
PARAMETER  
SYMBOL  
CONDITIONS  
V
(V)  
TYP  
MAX  
105  
21  
18  
-
MAX  
130  
26  
24  
-
MAX  
160  
32  
27  
-
UNITS  
ns  
CC  
Propagation Delay,  
Data to Outputs  
HC/HCT368  
t , t  
PLH PHL  
C = 50pF  
2
-
-
L
4.5  
ns  
6
5
2
-
ns  
C = 15pF  
9
-
ns  
L
Propagation Delay,  
Output Enable and Disable  
to Outputs  
t , t  
PLH PHL  
C = 50pF  
150  
30  
26  
-
190  
38  
33  
-
225  
45  
38  
-
ns  
L
4.5  
6
-
ns  
-
ns  
C = 15pF  
5
12  
-
ns  
L
Output Transition Time  
Input Capacitance  
t
, t  
TLH THL  
C = 50pF  
L
2
60  
12  
10  
10  
20  
75  
15  
13  
10  
20  
90  
18  
15  
10  
20  
ns  
4.5  
6
-
ns  
-
ns  
C
-
-
-
-
pF  
pF  
I
Three-State Output  
Capacitance  
C
-
-
O
Power Dissipation  
Capacitance  
C
-
5
40  
-
-
-
pF  
PD  
(Notes 4, 5)  
HCT TYPES  
Propagation Delay,  
Data to Outputs  
HC/HCT367  
t
t
t
, t  
C = 50pF  
4.5  
5
-
25  
-
31  
-
38  
-
ns  
ns  
PLH PHL  
L
C = 15pF  
9
L
Propagation Delay,  
Data to Outputs  
HC/HCT368  
, t  
PLH PHL  
C = 50pF  
4.5  
5
-
30  
-
38  
-
45  
-
ns  
ns  
L
C = 15pF  
11  
L
Propagation Delay,  
Output Enable and Disable  
to Outputs  
, t  
PLH PHL  
C = 50pF  
4.5  
5
-
35  
-
44  
-
53  
-
ns  
ns  
L
C = 15pF  
14  
L
Output Transition Time  
Input Capacitance  
t
, t  
TLH THL  
C = 50pF  
L
4.5  
-
-
12  
10  
20  
-
15  
10  
20  
-
18  
10  
20  
-
ns  
pF  
pF  
pF  
C
-
-
-
-
-
IN  
Three-State Capacitance  
C
-
O
Power Dissipation  
Capacitance  
C
5
42  
PD  
(Notes 4, 5)  
NOTES:  
4. C  
is used to determine the dynamic power consumption, per buffer.  
2
PD  
5. P = V  
f (C  
+ C ) where f = Input Frequency, C = Output Load Capacitance, V = Supply Voltage.  
CC  
D
CC  
i
PD  
L
i
L
6
CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368  
Test Circuits and Waveforms  
t = 6ns  
t = 6ns  
t = 6ns  
t = 6ns  
r
f
r
f
V
3V  
CC  
90%  
50%  
10%  
2.7V  
1.3V  
0.3V  
INPUT  
INPUT  
GND  
GND  
t
t
t
t
THL  
TLH  
THL  
TLH  
90%  
1.3V  
90%  
50%  
10%  
INVERTING  
OUTPUT  
INVERTING  
OUTPUT  
10%  
t
t
PLH  
PHL  
t
t
PLH  
PHL  
FIGURE 2. HC TRANSITION TIMES AND PROPAGATION  
DELAY TIMES, COMBINATION LOGIC  
FIGURE 3. HCT TRANSITION TIMES AND PROPAGATION  
DELAY TIMES, COMBINATION LOGIC  
6ns  
6ns  
t
6ns  
t
6ns  
r
f
V
3V  
CC  
OUTPUT  
DISABLE  
OUTPUT  
DISABLE  
90%  
2.7  
50%  
t
1.3  
10%  
0.3  
GND  
GND  
t
t
t
t
PZL  
PZL  
PLZ  
PLZ  
OUTPUT LOW  
TO OFF  
OUTPUT LOW  
TO OFF  
50%  
50%  
1.3V  
10%  
90%  
10%  
90%  
t
t
PZH  
PHZ  
PHZ  
t
PZH  
OUTPUT HIGH  
TO OFF  
OUTPUT HIGH  
TO OFF  
1.3V  
OUTPUTS  
ENABLED  
OUTPUTS  
ENABLED  
OUTPUTS  
DISABLED  
OUTPUTS  
ENABLED  
OUTPUTS  
DISABLED  
OUTPUTS  
ENABLED  
FIGURE 4. HC THREE-STATE PROPAGATION DELAY  
WAVEFORM  
FIGURE 5. HCT THREE-STATE PROPAGATION DELAY  
WAVEFORM  
OTHER  
OUTPUT  
= 1kΩ  
INPUTS  
TIED HIGH  
OR LOW  
IC WITH  
THREE-  
STATE  
R
L
V
FOR t AND t  
PLZ  
CC  
GND FOR t  
PZL  
AND t  
PHZ  
PZH  
C
L
OUTPUT  
50pF  
OUTPUT  
DISABLE  
NOTE: Open drain waveforms t  
and t are the same as those for three-state shown on the left. The test circuit is Output R = 1kto  
PZL L  
PLZ  
V
, C = 50pF.  
CC  
L
FIGURE 6. HC AND HCT THREE-STATE PROPAGATION DELAY TEST CIRCUIT  
7
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