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CC2650MODA

ZHCSFF6D –AUGUST 2016–REVISED JULY 2019

CC2650MODA SimpleLink™ 低功耗 Bluetooth^®无线 MCU 模块

1 器件概述

1.1 特性

1

• 微控制器

• 低功耗

– 宽电源电压范围

– 强大的 ARM^®Cortex^®-M3

– EEMBC CoreMark^®评分：142

– 高达 48MHz 的时钟速度

– 128KB 系统内可编程闪存

– 8KB 缓存静态 RAM (SRAM)

– 20KB 超低泄漏 SRAM

– 2 引脚 cJTAG 和 JTAG 调试

– 支持无线 (OTA) 升级

• 超低功耗传感器控制器

– 可独立于系统其余部分自主运行

– 16 位架构

– 工作电压范围为 1.8V 至 3.8V

– 有源模式 RX：6.2mA

– 有源模式 TX (0dBm)：6.8mA

– 有源模式 TX (+5dBm)：9.4mA

– 有源模式 MCU：61µA/MHz

– 有源模式 MCU：48.5 CoreMark/mA

– 有源模式传感器控制器：

0.4mA + 8.2μA/MHz

– 待机电流：1μA（RTC 运行，RAM/CPU 保持）

– 关断电流：100nA（发生外部事件时唤醒）

• 射频 (RF) 部分

– 存储代码和数据的 2KB 超低泄漏

静态随机存取存储器 (SRAM)

• 高效代码尺寸架构，ROM 中装载驱动程序、低功耗

Bluetooth^®控制器、 IEEE ^®802.15.4 媒体接入控制

(MAC) 和引导加载程序

– 2.4GHz 射频收发器，符合低功耗蓝牙 (BLE) 5.1

规范及 IEEE 802.15.4 PHY 和 MAC

– 符合 CC2650MODA RF-PHY 标准 (QDID:

88415)

• 集成天线

• 外设

– 出色的接收器灵敏度（蓝牙低功耗对应

–97dBm，802.15.4 对应 –100dBm）、可选择性

以及阻断性能

– 所有数字外设引脚均可连接任意 GPIO

– 最高达 +5dBm 的可编程输出功率

– 已经过预认证，符合全球射频规范

– ETSI RED（欧洲）

– 四个通用定时器模块

（8 × 16 位或 4 × 32 位，均采用脉宽调制

(PWM)）

– 12 位模数转换器 (ADC)、200 ksps、8 通道模拟

多路复用器

– IC（加拿大）

– FCC（美国）

– 持续时间比较器

– 超低功耗模拟比较器

– 可编程电流源

– UART

– 2 个同步串行接口 (SSI)（SPI、MICROWIRE 和

TI）

– I²C

– ARIB STD-T66（日本）

– JATE（日本）

• 工具和开发环境

– 功能全面的低成本开发套件

– 针对不同 RF 配置的多种参考设计

– 数据包监听器 PC 软件

– Sensor Controller Studio

– SmartRF™Studio

– SmartRF Flash Programmer 2

– IAR Embedded Workbench^®（用于 ARM）

– Code Composer Studio™

– I2S

– 实时时钟 (RTC)

– AES-128 安全模块

– 真随机数发生器 (TRNG)

– 15 个通用输入输出 (GPIO)

– 支持八个电容感测按钮

– 集成温度传感器

• 外部系统

– 片上内部直流/直流转换器

– 无需外部组件，只需电源电压

1

本文档旨在为方便起见，提供有关 TI 产品中文版本的信息，以确认产品的概要。有关适用的官方英文版本的最新信息，请访问 www.ti.com，其内容始终优先。 TI 不保证翻译的准确

性和有效性。在实际设计之前，请务必参考最新版本的英文版本。

English Data Sheet: SWRS187

CC2650MODA

ZHCSFF6D –AUGUST 2016–REVISED JULY 2019

www.ti.com.cn

1.2 应用

•

楼宇自动化

医疗和健康

电器

•

接近标签

警报和安全

遥控

工业

无线传感器网络

消费类电子产品

1.3 说明

该 SimpleLink™CC2650MODA 器件是一款无线微控制器 (MCU) 模块，主要适用于低功耗 Bluetooth^®应

用。CC2650MODA 器件还适用于 ZigBee^®和 6LoWPAN 以及 ZigBee RF4CE™远程控制应用。

该模块基于 SimpleLink CC2650 无线 MCU，属于 CC26xx 系列的经济高效型超低功耗 2.4GHz RF 器件。

它具有极低的有源 RF 和 MCU 电流以及低功耗模式流耗，可确保卓越的电池使用寿命，适合小型纽扣电池

供电以及在能源采集型应用中使用。

CC2650MODA 模块含有一个 32 位 ARM Cortex-M3 处理器（与主处理器工作频率同为 48MHz），并且具

有丰富的外设功能集，其中包括一个独特的超低功耗传感器控制器。此传感器控制器非常适合连接外部传感

器，或适合用于在系统其余部分处于睡眠模式的情况下自主收集模拟和数字数据。因此，CC2650MODA 器

件成为工业、消费类电子和医疗产品中各类应用的理想选择。

CC2650MODA 模块已通过预认证，能够按照 FCC、IC、ETSI 和 ARIB 规范运行。在客户将此模块集成到

其产品中时，这些认证能够为客户节省大量成本和精力。

蓝牙低功耗控制器和 IEEE 802.15.4 MAC 嵌入在 ROM 中，并在 ARM^®Cortex^®-M0 处理器上单独运行。此

架构可改善系统整体性能和功耗，并释放更多闪存以供应用。

蓝牙低功耗软件堆栈 (BLE-Stack) 以及 ZigBee 软件堆栈 ( Z-Stack™) 可以免费获取。

器件信息⁽¹⁾

封装

器件型号

CC2650MODAMOH

(1) 详细信息请参阅节 10。

封装尺寸

MOH（模块）

16.90mm x 11.00mm

2

器件概述

CC2650MODA

www.ti.com.cn

ZHCSFF6D –AUGUST 2016–REVISED JULY 2019

1.4 功能框图

图 1-1 是 CC2650MODA 器件的框图。

SimpleLink CC2650MODA Wireless MCU Module

32.768-kHz

Crystal

Oscillator

24-MHz Crystal

Oscillator

RF Balun

RF core

cJTAG

ROM

Main CPU

ADC

128-KB

Flash

ARM

Cortex-M3

Digital PLL

DSP Modem

8-KB

Cache

4-KB

SRAM

ARM

Cortex-M0

20-KB

SRAM

ROM

Sensor Controller

General Peripherals / Modules

I²C

UART

4× 32-bit Timers

Sensor Controller Engine

2× SSI (SPI, µWire, TI)

Watchdog Timer

TRNG

12-bit ADC, 200 ks/s

2× Analog Comparators

SPI / I²C Digital Sensor IF

Constant Current Source

Time-to-Digital Converter

2-KB SRAM

I2S

15 GPIOs

AES

Temp. / Batt. Monitor

RTC

32 ch. µDMA

DC-DC Converter

图 1-1. CC2650MODA 框图

器件概述

3

CC2650MODA

ZHCSFF6D –AUGUST 2016–REVISED JULY 2019

www.ti.com.cn

内容

1

器件概述.................................................... 1

1.1 特性 ................................................... 1

1.2 应用 ................................................... 2

1.3 说明 ................................................... 2

1.4 功能框图 .............................................. 3

修订历史记录............................................... 5

Device Comparison ..................................... 6

3.1 Related Products ..................................... 6

Terminal Configuration and Functions.............. 7

4.1 Module Pin Diagram.................................. 7

4.2 Pin Functions ......................................... 8

Specifications ............................................ 9

5.1 Absolute Maximum Ratings .......................... 9

5.2 ESD Ratings.......................................... 9

5.3 Recommended Operating Conditions ................ 9

5.4 Power Consumption Summary...................... 10

5.5 General Characteristics ............................. 10

5.6 Antenna ............................................. 11

6.2 Functional Block Diagram........................... 24

6.3 Main CPU ........................................... 25

6.4 RF Core ............................................. 25

6.5 Sensor Controller ................................... 26

6.6 Memory.............................................. 27

6.7 Debug ............................................... 27

6.8 Power Management................................. 28

6.9 Clock Systems ...................................... 29

6.10 General Peripherals and Modules .................. 29

6.11 System Architecture................................. 30

6.12 Certification.......................................... 30

6.13 End Product Labeling ............................... 32

6.14 Manual Information to the End User ................ 32

6.15 Module Marking ..................................... 33

Application, Implementation, and Layout ......... 34

7.1 Application Information .............................. 34

7.2 Layout ............................................... 35

2

3

4

5

7

8

Environmental Requirements and

Specifications ........................................... 36

5.7

5.8

5.9

1-Mbps GFSK (Bluetooth low energy) – RX ........ 11

8.1 PCB Bending........................................ 36

8.2 Handling Environment .............................. 36

8.3 Storage Condition ................................... 36

8.4 Baking Conditions................................... 36

8.5 Soldering and Reflow Condition .................... 37

器件和文档支持 .......................................... 38

9.1 器件命名规则 ........................................ 38

9.2 工具和软件 .......................................... 39

9.3 文档支持............................................. 40

9.4 德州仪器 (TI) 低功耗射频网站....................... 40

9.5 低功耗射频电子新闻简报 ............................ 40

9.6 社区资源............................................. 41

9.7 其他信息............................................. 41

9.8 商标.................................................. 41

9.9 静电放电警告 ........................................ 42

9.10 Export Control Notice ............................... 42

9.11 Glossary ............................................. 42

1-Mbps GFSK (Bluetooth low energy) – TX ........ 12

IEEE 802.15.4 (Offset Q-PSK DSSS, 250 kbps) –

RX ................................................... 12

5.10 IEEE 802.15.4 (Offset Q-PSK DSSS, 250 kbps) –

TX ................................................... 13

5.11 24-MHz Crystal Oscillator (XOSC_HF) ............. 13

5.12 32.768-kHz Crystal Oscillator (XOSC_LF).......... 13

5.13 48-MHz RC Oscillator (RCOSC_HF) ............... 13

5.14 32-kHz RC Oscillator (RCOSC_LF)................. 13

5.15 ADC Characteristics................................. 14

5.16 Temperature Sensor ................................ 15

5.17 Battery Monitor...................................... 15

5.18 Continuous Time Comparator....................... 15

5.19 Low-Power Clocked Comparator ................... 15

5.20 Programmable Current Source ..................... 16

9

5.21 DC Characteristics .................................. 16

5.22 Thermal Resistance Characteristics for MOH

Package ............................................. 17

5.23 Timing Requirements ............................... 17

5.24 Switching Characteristics ........................... 17

5.25 Typical Characteristics .............................. 20

Detailed Description ................................... 24

6.1 Overview ............................................ 24

10 机械、封装和可订购信息 ............................... 42

10.1 封装信息............................................. 42

10.2 PACKAGE OPTION ADDENDUM .................. 43

10.3 PACKAGE MATERIALS INFORMATION ........... 44

6

4

内容

CC2650MODA

www.ti.com.cn

ZHCSFF6D –AUGUST 2016–REVISED JULY 2019

2 修订历史记录

注：之前版本的页码可能与当前版本有所不同。

Changes from July 1, 2017 to July 31, 2019

Page

•

Added Module Marking section. .................................................................................................. 33

Added Environmental Requirements and Specifications section. ............................................................ 36

修订历史记录

5

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3 Device Comparison

Table 3-1. Device Family Overview

DEVICE

PHY SUPPORT

Multiprotocol⁽¹⁾

FLASH (KB) RAM (KB)

128 20

GPIO

PACKAGE

CC2650MODAMOH

15

MOH

(1) The CC2650 device supports all PHYs and can be reflashed to run all the supported standards.

3.1 Related Products

TI's Wireless Connectivity The wireless connectivity portfolio offers a wide selection of low-power RF

solutions suitable for a broad range of applications. The offerings range from fully

customized solutions to turn key offerings with pre-certified hardware and software

(protocol).

TI's SimpleLink™ Sub-1 GHz Wireless MCUs Long-range, low-power wireless connectivity solutions

are offered in a wide range of Sub-1 GHz ISM bands.

Companion Products Review products that are frequently purchased or used in conjunction with this

product.

SimpleLink™ CC2650 Wireless MCU LaunchPad™ Development Kit

The CC2650 LaunchPad™

development kit brings easy Bluetooth^®low energy connectivity to the LaunchPad kit

ecosystem with the SimpleLink ultra-low power CC26xx family of devices. This LaunchPad

kit also supports development for multi-protocol support for the SimpleLink multi-standard

CC2650 wireless MCU and the rest of CC26xx family of products: CC2630 wireless MCU for

ZigBee^®/6LoWPAN and CC2640 wireless MCU for Bluetooth low energy.

Reference Designs for CC2650MODA TI Designs Reference Design Library is a robust reference design

library spanning analog, embedded processor and connectivity. Created by TI experts to

help you jump-start your system design, all TI Designs include schematic or block diagrams,

BOMs, and design files to speed your time to market. Search and download designs at

ti.com/tidesigns.

6

Device Comparison

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4 Terminal Configuration and Functions

Section 4.1 shows pin assignments for the CC2650MODA device.

4.1 Module Pin Diagram

Antenna

GND

NC

1

2

3

4

5

6

7

8

9

25 GND

24 NC

GND

23 VDD

22 VDD

DIO 0

DIO 1

21 DIO 14

20 DIO 13

19 DIO 12

18 DIO 11

17 DIO 10

G1

G3

G2

G4

DIO 2

DIO 3

DIO 4

(Exposed GND Pads)

JTAG_TMS

10 11 12 13 14 15 16

(1) The following I/O pins marked in bold in the pinout have high-drive capabilities:

•

DIO 2

DIO 3

DIO 4

JTAG_TMS

DIO 5/JTAG_TDO

DIO 6/JTAG_TDI

(2) The following I/O pins marked in italics in the pinout have analog capabilities:

•

DIO 7

DIO 8

DIO 9

DIO 10

DIO 11

DIO 12

DIO 13

DIO 14

Figure 4-1. CC2650MODA MOH Package

(16.9-mm × 11-mm) Module Pinout

Terminal Configuration and Functions

7

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4.2 Pin Functions

Table 4-1 describes the CC2650MODA pins.

Table 4-1. Signal Descriptions – MOH Package

PIN NAME

DIO_0

PIN NO.

PIN TYPE

DESCRIPTION

4

Digital I/O

GPIO, Sensor Controller

DIO_1

5

Digital I/O

GPIO, Sensor Controller

DIO_2

6

Digital I/O

GPIO, Sensor Controller, high-drive capability

GPIO, high-drive capability, JTAG_TDO

GPIO, high-drive capability, JTAG_TDI

GPIO, Sensor Controller, analog

Ground – Exposed ground pad

Ground

DIO_3

7

Digital I/O

DIO_4

8

Digital I/O

DIO_5/JTAG_TDO

DIO_6/JTAG_TDI

DIO_7

11

12

14

15

16

17

18

19

20

21

Digital I/O

Digital I/O, Analog I/O

DIO_8

DIO_9

DIO_10

DIO_11

DIO_12

DIO_13

DIO_14

EGP

G1, G2, G3, G4 Power

GND

1, 3, 25

10

—

JTAG_TCK

JTAG_TMS

NC

Digital I/O

NC

JTAG TCKC

9

JTAG TMSC, high-drive capability

2, 24

13

Not Connected—TI recommends leaving these pins floating

Reset, active low. No internal pullup

nRESET

VDD

Digital input

Power

22, 23

1.8-V to 3.8-V main chip supply

8

Terminal Configuration and Functions

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5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾⁽²⁾

MIN

–0.3

MAX

UNIT

V

VDD

V_in

Supply voltage

Voltage on any digital pin⁽³⁾

4.1

VDD + 0.3, max 4.1

V

Voltage scaling enabled

VDD

1.49

Voltage on ADC input

Voltage scaling disabled, internal reference

Voltage scaling disabled, VDD as reference

V

VDD / 2.9

5

Input RF level

dBm

°C

T_stg

Storage temperature

–40

85

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to ground, unless otherwise noted.

(3) Including analog capable DIO.

5.2 ESD Ratings

VALUE

UNIT

Human body model (HBM), per ANSI/ESDA/JEDEC

JS001⁽¹⁾

All pins

±1000

V_ESD

Electrostatic discharge

V

RF pins

±500

Charged device model (CDM), per JESD22-C101⁽²⁾

Non-RF pins

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

5.3 Recommended Operating Conditions

MIN

MAX

UNIT

Ambient temperature

–40

85

°C

For operation in battery-powered and 3.3-V systems

(internal DC-DC can be used to minimize power

consumption)

Operating supply voltage (VDD)

1.8

3.8

V

Specifications

9

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5.4 Power Consumption Summary

T_c= 25°C, V_DD= 3.0 V with internal DC-DC converter, unless otherwise noted

PARAMETER

TEST CONDITIONS

MIN

TYP

100

150

1

MAX UNIT

Reset. RESET_N pin asserted or VDD below Power-on-

Reset threshold

nA

Shutdown. No clocks running, no retention

Standby. With RTC, CPU, RAM and (partial) register

retention. RCOSC_LF

Standby. With RTC, CPU, RAM and (partial) register

retention. XOSC_LF

1.2

2.5

Standby. With Cache, RTC, CPU, RAM and (partial)

register retention. RCOSC_LF

µA

Core current

consumption

I_core

Standby. With Cache, RTC, CPU, RAM and (partial)

register retention. XOSC_LF

2.7

Idle. Supply systems and RAM powered.

550

1.45 mA +

31 µA/MHz

Active. Core running CoreMark

Radio RX

6.2

6.8

9.4

Radio TX, 0-dBm output power

mA

Radio TX, 5-dBm output power

Peripheral Current Consumption (Adds to core current I_corefor each peripheral unit activated)⁽¹⁾

Peripheral power

Delta current with domain enabled

domain

20

13

Serial power domain

Delta current with domain enabled

Delta current with power domain enabled, clock

enabled, RF Core Idle

RF core

237

µDMA

Timers

I²C

Delta current with clock enabled, module idle

130

113

12

I_peri

µA

I2S

36

SSI

93

UART

164

(1) I_periis not supported in Standby or Shutdown.

5.5 General Characteristics

T_c= 25°C, V_DD= 3.0 V, unless otherwise noted

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

FLASH MEMORY

Supported flash erase cycles before

failure

100

k Cycles

Flash page/sector erase current

Flash page/sector erase time⁽¹⁾

Flash page/sector size

Flash write current

Average delta current

12.6

8

mA

ms

KB

mA

µs

4

Average delta current, 4 bytes at a time

4 bytes at a time

8.15

8

Flash write time⁽¹⁾

(1) This number is dependent on flash aging and will increase over time and erase cycles.

10

Specifications

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5.6 Antenna

T_c= 25°C, V_DD= 3.0 V, unless otherwise noted.

PARAMETER

TEST CONDITIONS

MIN

TYP

Linear

1.26

MAX

UNIT

Polarization

Peak Gain

Efficiency

2450 MHz

dBi

57%

5.7 1-Mbps GFSK (Bluetooth low energy) – RX

RF performance is specified in a single ended 50-Ω reference plane at the antenna feeding point with T_c= 25°C,

V_DD= 3.0 V, f_RF= 2440 MHz, unless otherwise noted.

PARAMETER

Receiver sensitivity

TEST CONDITIONS

MIN

TYP

–97

4

MAX UNIT

dBm

BER = 10^–3

Receiver saturation

dBm

Difference between center frequency of the received RF signal

and local oscillator frequency.

Frequency error tolerance

Data rate error tolerance

Co-channel rejection⁽¹⁾

–350

–750

350 kHz

750 ppm

dB

Wanted signal at –67 dBm, modulated interferer in channel,

BER = 10^–3

–6

7 / 3⁽²⁾

29 / 23⁽²⁾

38 / 26⁽²⁾

42 / 29⁽²⁾

32

Wanted signal at –67 dBm, modulated interferer at ±1 MHz,

BER = 10^–3

Selectivity, ±1 MHz⁽¹⁾

dB

Wanted signal at –67 dBm, modulated interferer at ±2 MHz,

BER = 10^–3

Selectivity, ±2 MHz⁽¹⁾

Wanted signal at –67 dBm, modulated interferer at ±3 MHz,

BER = 10^–3

Selectivity, ±3 MHz⁽¹⁾

Wanted signal at –67 dBm, modulated interferer at ±4 MHz,

BER = 10^–3

Selectivity, ±4 MHz⁽¹⁾

Wanted signal at –67 dBm, modulated interferer at ≥ ±5 MHz,

Selectivity, ±5 MHz or more⁽¹⁾

Selectivity, Image frequency⁽¹⁾

BER = 10^–3

Wanted signal at –67 dBm, modulated interferer at image

frequency, BER = 10^–3

23

Selectivity,

Wanted signal at –67 dBm, modulated interferer at ±1 MHz from

image frequency, BER = 10^–3

3 / 26⁽²⁾

Image frequency ±1 MHz⁽¹⁾

Out-of-band blocking⁽³⁾

Out-of-band blocking

30 MHz to 2000 MHz

2003 MHz to 2399 MHz

2484 MHz to 2997 MHz

3000 MHz to 12.75 GHz

–20

–5

dBm

–8

Wanted signal at 2402 MHz, –64 dBm. Two interferers at 2405

and 2408 MHz respectively, at the given power level

Intermodulation

–34

dBm

Conducted measurement in a 50-Ω single-ended load. Suitable

for systems targeting compliance with EN 300 328, EN 300 440

class 2, FCC CFR47, Part 15 and ARIB STD-T-66

Spurious emissions,

30 MHz to 1000 MHz

–71

dBm

Conducted measurement in a 50-Ω single-ended load. Suitable

for systems targeting compliance with EN 300 328, EN 300 440

class 2, FCC CFR47, Part 15 and ARIB STD-T-66

Spurious emissions,

1 GHz to 12.75 GHz

–62

dBm

RSSI dynamic range

RSSI accuracy

70

±4

dB

(1) Numbers given as I/C dB

(2) X / Y, where X is +N MHz and Y is –N MHz

(3) Excluding one exception at F_wanted/ 2, per Bluetooth Specification

Specifications

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5.8 1-Mbps GFSK (Bluetooth low energy) – TX

RF performance is specified in a single ended 50-Ω reference plane at the antenna feeding point with T_c= 25°C,

V_DD= 3.0 V, f_RF= 2440 MHz, unless otherwise noted.

PARAMETER

TEST CONDITIONS

MIN

TYP

5

MAX UNIT

dBm

Output power, highest setting

Output power, lowest setting

–21

–43

–58

–57

–45

dBm

f < 1 GHz, outside restricted bands

f < 1 GHz, restricted bands ETSI

f < 1 GHz, restricted bands FCC

f > 1 GHz, including harmonics

Spurious emission conducted

measurement⁽¹⁾

dBm

(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 Class 2

(Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan)

5.9 IEEE 802.15.4 (Offset Q-PSK DSSS, 250 kbps) – RX

RF performance is specified in a single ended 50-Ω reference plane at the antenna feeding point with T_c= 25°C,

V_DD= 3.0 V, unless otherwise noted.

PARAMETER

Receiver sensitivity

TEST CONDITIONS

MIN

TYP

–100

–7

MAX UNIT

dBm

PER = 1%

Receiver saturation

dBm

Wanted signal at –82 dBm, modulated interferer at ±5 MHz,

PER = 1%

Adjacent channel rejection

35

52

dB

Wanted signal at –82 dBm, modulated interferer at ±10 MHz,

PER = 1%

Alternate channel rejection

Wanted signal at –82 dBm, undesired signal is IEEE 802.15.4

modulated channel, stepped through all channels 2405 to

2480 MHz, PER = 1%

Channel rejection, ±15 MHz or

more

57

dB

Blocking and desensitization,

5 MHz from upper band edge

Wanted signal at –97 dBm (3 dB above the sensitivity level),

CW jammer, PER = 1%

64

65

68

63

65

67

dB

Blocking and desensitization,

10 MHz from upper band edge

Wanted signal at –97 dBm (3 dB above the sensitivity level),

CW jammer, PER = 1%

Blocking and desensitization,

20 MHz from upper band edge

Wanted signal at –97 dBm (3 dB above the sensitivity level),

CW jammer, PER = 1%

Blocking and desensitization,

50 MHz from upper band edge

Wanted signal at –97 dBm (3 dB above the sensitivity level),

CW jammer, PER = 1%

Blocking and desensitization,

–5 MHz from lower band edge

Wanted signal at –97 dBm (3 dB above the sensitivity level),

CW jammer, PER = 1%

Blocking and desensitization,

–10 MHz from lower band edge

Wanted signal at –97 dBm (3 dB above the sensitivity level),

CW jammer, PER = 1%

Blocking and desensitization,

–20 MHz from lower band edge

Wanted signal at –97 dBm (3 dB above the sensitivity level),

CW jammer, PER = 1%

Blocking and desensitization,

–50 MHz from lower band edge

Wanted signal at –97 dBm (3 dB above the sensitivity level),

CW jammer, PER = 1%

Conducted measurement in a 50-Ω single-ended load.

Suitable for systems targeting compliance with EN 300 328,

EN 300 440 class 2, FCC CFR47, Part 15 and ARIB STD-T-

66

Spurious emissions,

30 MHz to 1000 MHz

–71

dBm

Conducted measurement in a 50-Ω single-ended load.

Suitable for systems targeting compliance with EN 300 328,

EN 300 440 class 2, FCC CFR47, Part 15 and ARIB STD-T-

66

Spurious emissions,

1 GHz to 12.75 GHz

–62

dBm

ppm

Difference between center frequency of the received RF

signal and local oscillator frequency

Frequency error tolerance

>200

RSSI dynamic range

RSSI accuracy

100

±4

dB

12

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5.10 IEEE 802.15.4 (Offset Q-PSK DSSS, 250 kbps) – TX

RF performance is specified in a single ended 50-Ω reference plane at the antenna feeding point with T_c= 25°C,

V_DD= 3.0 V, unless otherwise noted.

PARAMETER

Output power, highest setting

Output power, lowest setting

Error vector magnitude

TEST CONDITIONS

MIN

TYP

5

MAX

UNIT

dBm

–21

2%

–43

–58

–57

–45

At maximum output power

f < 1 GHz, outside restricted bands

f < 1 GHz, restricted bands ETSI

f < 1 GHz, restricted bands FCC

f > 1 GHz, including harmonics

Spurious emission conducted

measurement⁽¹⁾

dBm

(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 Class 2

(Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan)

5.11 24-MHz Crystal Oscillator (XOSC_HF)⁽¹⁾

over operating free-air temperature range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

MHz

ppm

µs

Crystal frequency

24

Crystal frequency tolerance⁽²⁾

Start-up time⁽³⁾

–40

40

150

(1) Probing or otherwise stopping the XTAL while the DC-DC converter is enabled may cause permanent damage to the device.

(2) Includes initial tolerance of the crystal, drift over temperature, aging and frequency pulling due to incorrect load capacitance. As per

Bluetooth and IEEE 802.15.4 specification

(3) Kick-started based on a temperature and aging compensated RCOSC_HF using precharge injection

5.12 32.768-kHz Crystal Oscillator (XOSC_LF)

over operating free-air temperature range (unless otherwise noted)

PARAMETER

Crystal frequency

TEST CONDITIONS

MIN

TYP

MAX

UNIT

32.768

kHz

Initial crystal frequency tolerance, Bluetooth T_c= 25°C

low energy applications

–20

-3

20

3

ppm

Crystal aging

ppm/year

5.13 48-MHz RC Oscillator (RCOSC_HF)

T_c= 25°C, V_DD= 3.0 V, unless otherwise noted

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Frequency

48

±1%

MHz

Uncalibrated frequency accuracy

Calibrated frequency accuracy⁽¹⁾

Start-up time

±0.25%

5

µs

(1) Accuracy relatively to the calibration source (XOSC_HF).

5.14 32-kHz RC Oscillator (RCOSC_LF)

T_c= 25°C, V_DD= 3.0 V, unless otherwise noted

PARAMETER

Calibrated frequency

TEST CONDITIONS

MIN

TYP

32.8

50

MAX

UNIT

kHz

Temperature coefficient

ppm/°C

Specifications

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5.15 ADC Characteristics

T_c= 25°C, V_DD= 3.0 V and voltage scaling enabled, unless otherwise noted

(1)

PARAMETER

Input voltage range

Resolution

TEST CONDITIONS

MIN

TYP

MAX UNIT

0

V_DD

V

12

Bits

ksps

LSB

Sample rate

200

Offset

Internal 4.3-V equivalent reference⁽²⁾

2

2.4

>–1

±3

Gain error

DNL⁽³⁾

INL⁽⁴⁾

Differential nonlinearity

Integral nonlinearity

Internal 4.3-V equivalent reference⁽²⁾, 200 ksps,

9.6-kHz input tone

9.8

10

ENOB

Effective number of bits VDD as reference, 200 ksps, 9.6-kHz input tone

Bits

dB

Internal 1.44-V reference, voltage scaling disabled,

32 samples average, 200 ksps, 300-Hz input tone

Internal 4.3-V equivalent reference⁽²⁾, 200 ksps,

9.6-kHz input tone

11.1

–65

–69

–71

Total harmonic

distortion

THD

VDD as reference, 200 ksps, 9.6-kHz input tone

Internal 1.44-V reference, voltage scaling disabled,

32 samples average, 200 ksps, 300-Hz input tone

Internal 4.3-V equivalent reference⁽²⁾, 200 ksps,

9.6-kHz input tone

60

63

69

SINAD

and SNDR distortion ratio

Signal-to-noise and

VDD as reference, 200 ksps, 9.6-kHz input tone

Internal 1.44-V reference, voltage scaling disabled,

32 samples average, 200 ksps, 300-Hz input tone

Internal 4.3-V equivalent reference⁽²⁾, 200 ksps,

9.6-kHz input tone

67

72

73

Spurious-free dynamic

range

SFDR

VDD as reference, 200 ksps, 9.6-kHz input tone

Internal 1.44-V reference, voltage scaling disabled, 32

samples average, 200 ksps, 300-Hz input tone

clock-

cycles

Conversion time

Serial conversion, time-to-output, 24-MHz clock

50

Current consumption

Internal 4.3-V equivalent reference⁽²⁾

VDD as reference

0.66

0.75

mA

Equivalent fixed internal reference (input voltage

scaling enabled). For best accuracy, the ADC

conversion should be initiated through the TI-RTOS™

API to include the gain or offset compensation factors

stored in FCFG1.

Reference voltage

4.3⁽²⁾⁽⁵⁾

V

Fixed internal reference (input voltage scaling

disabled). For best accuracy, the ADC conversion

should be initiated through the TI-RTOS API to include

the gain or offset compensation factors stored in

FCFG1. This value is derived from the scaled value

(4.3 V) as follows: V_ref= 4.3 V × 1408 / 4095

Reference voltage

1.48

V

VDD as reference (Also known as RELATIVE) (input

voltage scaling enabled)

Reference voltage

VDD

V

VDD as reference (Also known as RELATIVE) (input

voltage scaling disabled)

VDD / 2.82⁽⁵⁾

200 ksps, voltage scaling enabled. Capacitive input,

input impedance depends on sampling frequency and

sampling time

Input Impedance

>1

MΩ

(1) Using IEEE Std 1241™-2010 for terminology and test methods.

(2) Input signal scaled down internally before conversion, as if voltage range was 0 to 4.3 V.

(3) No missing codes. Positive DNL typically varies from +0.3 to +3.5 depending on device, see Figure 5-24.

(4) For a typical example, see Figure 5-25.

(5) Applied voltage must be within absolute maximum ratings (see Section 5.1) at all times.

14

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5.16 Temperature Sensor

T_c= 25°C, V_DD= 3.0 V, unless otherwise noted

PARAMETER

Resolution

TEST CONDITIONS

MIN

TYP

MAX

UNIT

°C

4

Range

–40

85

°C

Accuracy

±5

°C

Supply voltage coefficient⁽¹⁾

3.2

°C/V

(1) Automatically compensated when using supplied driver libraries.

5.17 Battery Monitor

T_c= 25°C, V_DD= 3.0 V, unless otherwise noted

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

mV

V

Resolution

Range

50

1.8

3.8

Accuracy

13

mV

5.18 Continuous Time Comparator

T_c= 25°C, V_DD= 3.0 V, unless otherwise noted

PARAMETER

TEST CONDITIONS

MIN

0

TYP

MAX

V_DD

UNIT

V

Input voltage range

External reference voltage

0

V

Internal reference voltage

Offset

DCOUPL as reference

1.27

3

V

mV

µs

Hysteresis

<2

Decision time

Current consumption when enabled⁽¹⁾

Step from –10 mV to +10 mV

0.72

8.6

µA

(1) Additionally, the bias module must be enabled when running in standby mode.

5.19 Low-Power Clocked Comparator

T_c= 25°C, V_DD= 3.0 V, unless otherwise noted

PARAMETER

Input voltage range

TEST CONDITIONS

MIN

TYP

MAX

UNIT

0

VDD

V

Clock frequency

32

kHz

Internal reference voltage, VDD / 2

Internal reference voltage, VDD / 3

Internal reference voltage, VDD / 4

Internal reference voltage, DCOUPL / 1

Internal reference voltage, DCOUPL / 2

Internal reference voltage, DCOUPL / 3

Internal reference voltage, DCOUPL / 4

Offset

1.49–1.51

1.01–1.03

0.78–0.79

1.25–1.28

0.63–0.65

0.42–0.44

0.33–0.34

<2

V

mV

Hysteresis

<5

mV

Decision time

Step from –50 mV to +50 mV

<1

clock-cycle

nA

Current consumption when enabled

362

Specifications

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5.20 Programmable Current Source

T_c= 25°C, V_DD= 3.0 V, unless otherwise noted.

PARAMETER

TEST CONDITIONS

MIN

TYP

0.25–20

0.25

MAX

UNIT

µA

Current source programmable output range

Resolution

µA

Including current source at maximum

programmable output

Current consumption⁽¹⁾

23

µA

(1) Additionally, the bias module must be enabled when running in standby mode.

5.21 DC Characteristics

PARAMETER

T_A= 25°C, V_DD= 1.8 V

TEST CONDITIONS

MIN

TYP

MAX

UNIT

GPIO VOH at 8-mA load

GPIO VOL at 8-mA load

GPIO VOH at 4-mA load

GPIO VOL at 4-mA load

GPIO pullup current

IOCURR = 2, high-drive GPIOs only

IOCURR = 1

1.32

1.54

0.26

1.58

0.21

71.7

21.1

V

0.32

V

IOCURR = 1

V

Input mode, pullup enabled, Vpad = 0 V

Input mode, pulldown enabled, Vpad = VDD

µA

GPIO pulldown current

GPIO high/low input transition,

no hysteresis

IH = 0, transition between reading 0 and reading 1

0.88

1.07

V

GPIO low-to-high input transition,

with hysteresis

IH = 1, transition voltage for input read as 0 → 1

GPIO high-to-low input transition,

with hysteresis

IH = 1, transition voltage for input read as 1 → 0

IH = 1, difference between 0 → 1 and 1 → 0 points

0.74

0.33

V

GPIO input hysteresis

T_A= 25°C, V_DD= 3.0 V

GPIO VOH at 8-mA load

GPIO VOL at 8-mA load

GPIO VOH at 4-mA load

GPIO VOL at 4-mA load

T_A= 25°C, V_DD= 3.8 V

GPIO pullup current

IOCURR = 2, high-drive GPIOs only

IOCURR = 1

2.68

0.33

2.72

0.28

V

IOCURR = 1

Input mode, pullup enabled, Vpad = 0 V

277

113

µA

GPIO pulldown current

Input mode, pulldown enabled, Vpad = VDD

GPIO high/low input transition,

no hysteresis

IH = 0, transition between reading 0 and reading 1

1.67

1.94

V

GPIO low-to-high input transition,

with hysteresis

IH = 1, transition voltage for input read as 0 → 1

GPIO high-to-low input transition,

with hysteresis

IH = 1, transition voltage for input read as 1 → 0

IH = 1, difference between 0 → 1 and 1 → 0 points

1.54

0.4

V

GPIO input hysteresis

T_A= 25°C

Lowest GPIO input voltage reliably interpreted as a

«High»

VIH

VIL

0.8

VDD

Highest GPIO input voltage reliably interpreted as a

«Low»

0.2

16

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5.22 Thermal Resistance Characteristics for MOH Package

NAME

RΘ_JC

RΘ_JB

RΘ_JA

RΘ_JMA

Psi_JT

DESCRIPTION

°C/W^{(1) (2)}

20.0

AIR FLOW (m/s)⁽³⁾

Junction-to-case

Junction-to-board

Junction-to-free air

Junction-to-moving air

Junction-to-package top

Junction-to-board

15.3

29.6

0

1

0

25.0

8.8

Psi_JB

14.8

(1) °C/W = degrees Celsius per watt.

(2) These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RΘ_JC] value, which is based on a

JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see these

EIA/JEDEC standards:

•

JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air)

JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages

JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages

JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements

Power dissipation of 2 W and an ambient temperature of 70ºC is assumed.

(3) m/s = meters per second.

5.23 Timing Requirements

MIN

0

NOM

MAX

100

20

UNIT

mV/µs

Rising supply-voltage slew rate

Falling supply-voltage slew rate

Falling supply-voltage slew rate, with low-power flash settings⁽¹⁾

0

3

No limitation for negative

temperature gradient, or

outside standby mode

Positive temperature gradient in standby⁽²⁾

5

°C/s

µs

CONTROL INPUT AC CHARACTERISTICS⁽³⁾

RESET_N low duration

1

SYNCHRONOUS SERIAL INTERFACE (SSI)⁽⁴⁾

System

clocks

S1 (SLAVE)⁽⁵⁾

t_{clk_per}

SSIClk period

12

65024

S2⁽⁵⁾

S3⁽⁵⁾

t_{clk_high}

t_{clk_low}

SSIClk high time

SSIClk low time

0.5

t_{clk_per}

(1) For smaller coin cell batteries, with high worst-case end-of-life equivalent source resistance, a 22-µF VDD input capacitor (see

Section 7.1.1) must be used to ensure compliance with this slew rate.

(2) Applications using RCOSC_LF as sleep timer must also consider the drift in frequency caused by a change in temperature (see

Section 5.14).

(3) T_A= –40°C to +85°C, V_DD= 1.7 V to 3.8 V, unless otherwise noted.

(4) T_c= 25°C, V_DD= 3.0 V, unless otherwise noted. Device operating as slave. For SSI master operation, see Section 5.24.

(5) Refer to the SSI timing diagrams Figure 5-1, Figure 5-2, and Figure 5-3.

5.24 Switching Characteristics

Measured on the TI CC2650EM-5XD reference design with T_c= 25°C, V_DD= 3.0 V, unless otherwise noted.

PARAMETER

WAKEUP AND TIMING

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Idle → Active

14

151

µs

Standby → Active

Shutdown → Active

1015

Specifications

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Switching Characteristics (continued)

Measured on the TI CC2650EM-5XD reference design with T_c= 25°C, V_DD= 3.0 V, unless otherwise noted.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

(1)

SYNCHRONOUS SERIAL INTERFACE (SSI)

System

clocks

S1 (TX only)⁽²⁾t_{clk_per}(SSIClk period)

S1 (TX and RX)⁽²⁾t_{clk_per}(SSIClk period)

One-way communication to SLAVE

Normal duplex operation

4

8

65024

System

clocks

S2⁽²⁾t_{clk_high}(SSIClk high time)

S3⁽²⁾t_{clk_low}(SSIClk low time)

0.5

t_{clk_per}

(1) Device operating as master. For SSI slave operation, see Section 5.23.

(2) Refer to SSI timing diagrams Figure 5-1, Figure 5-2, and Figure 5-3.

S1

S2

SSIClk

S3

SSIFss

SSITx

MSB

LSB

SSIRx

4 to 16 bits

Figure 5-1. SSI Timing for TI Frame Format (FRF = 01), Single Transfer Timing Measurement

S2

S1

SSIClk

SSIFss

SSITx

SSIRx

S3

MSB

LSB

8-bit control

0

MSB

LSB

4 to 16 bits output data

Figure 5-2. SSI Timing for MICROWIRE Frame Format (FRF = 10), Single Transfer

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S1

S2

SSIClk

(SPO = 0)

S3

SSIClk

(SPO = 1)

SSITx

(Master)

MSB

LSB

SSIRx

(Slave)

MSB

LSB

SSIFss

Figure 5-3. SSI Timing for SPI Frame Format (FRF = 00), With SPH = 1

Specifications

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5.25 Typical Characteristics

This section contains typical performance plots measured on the CC2650F128RHB device. They are published in the

CC2650 data sheet, and the plots relevant for the CC2650MODA device are repeated here. RF performance is specified in a

single-ended 50-Ω reference plane at the antenna feeding point with T_c= 25°C and V_DD= 3.0 V, unless otherwise noted.

-93

-94

-95

-96

-97

-98

-99

-95

-96

Sensitivity

-97

-98

-99

-100

-101

-102

-103

-40 -30 -20 -10

0

10 20 30 40 50 60 70 80

Temperature (èC)

-40 -30 -20 -10

0

10 20 30 40 50 60 70 80

Temperature (èC)

D005

D004

Figure 5-5. IEEE 802.15.4 Sensitivity vs Temperature

Figure 5-4. Bluetooth low energy Sensitivity vs Temperature

-95

BLE Sensitivity

IEEE 802.15.4 Sensitivity

-96

-97

-96

-97

-98

-99

-100

-101

1.8

2.3

2.8

VDDS (V)

3.3

3.8

1.9

2.4

2.9

VDDS (V)

3.4

3.8

D006

D007

Figure 5-6. Bluetooth low energy Sensitivity

vs Supply Voltage (VDD)

Figure 5-7. IEEE 802.15.4 Sensitivity

vs Supply Voltage (VDD)

-95

-96

-95

Sensitivity

-95.5

-96

-97

-96.5

-97

-98

-97.5

-98

-99

-100

-98.5

-99

-101

2400 2410 2420 2430 2440 2450 2460 2470 2480

Frequency (MHz)

2400 2410 2420 2430 2440 2450 2460 2470 2480

Frequency (MHz)

D008

D009

Figure 5-8. IEEE 802.15.4 Sensitivity

vs Channel Frequency

Figure 5-9. Bluetooth low energy Sensitivity

vs Channel Frequency

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Typical Characteristics (continued)

This section contains typical performance plots measured on the CC2650F128RHB device. They are published in the

CC2650 data sheet, and the plots relevant for the CC2650MODA device are repeated here. RF performance is specified in a

single-ended 50-Ω reference plane at the antenna feeding point with T_c= 25°C and V_DD= 3.0 V, unless otherwise noted.

6

5

4

3

2

1

0

6

5

4

3

2

1

0

5-dBm Setting

3.3 3.8

5-dBm Setting

-40 -30 -20 -10

0

10 20 30 40 50 60 70 80

Temperature (èC)

1.8

2.3

2.8

VDDS (V)

D010

D011

Figure 5-10. TX Output Power vs Temperature

Figure 5-11. TX Output Power vs Supply Voltage (VDD)

8

7

6

5

4

3

2

1

0

16

5-dBm Setting

15

14

13

12

11

10

9

8

7

6

5

5-dBm setting

4

1.8

-1

2400 2410 2420 2430 2440 2450 2460 2470 2480

Frequency (MHz)

2

2.2 2.4 2.6 2.8

VDDS (V)

3

3.2 3.4 3.6 3.8

D012

D013

Figure 5-12. TX Output Power

vs Channel Frequency

Figure 5-13. TX Current Consumption

vs Supply Voltage (VDD)

10.5

7

RX Current

6.9

6.8

6.7

6.6

6.5

6.4

6.3

6.2

6.1

6

10

9.5

9

8.5

8

7.5

7

6.5

6

5.9

5.8

5.7

5.6

5.5

5

4.5

1.75

2

2.25 2.5 2.75

3

Voltage (V)

3.25 3.5 3.75

4

4.25 4.5

-40 -30 -20 -10

0

10 20 30 40 50 60 70 80

Temperature (èC)

Figure 5-14. RX Mode Current vs Supply Voltage (VDD^D)⁰¹⁴

Figure 5-15. RX Mode Current Consumption vs Temperature

D015

Specifications

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Typical Characteristics (continued)

This section contains typical performance plots measured on the CC2650F128RHB device. They are published in the

CC2650 data sheet, and the plots relevant for the CC2650MODA device are repeated here. RF performance is specified in a

single-ended 50-Ω reference plane at the antenna feeding point with T_c= 25°C and V_DD= 3.0 V, unless otherwise noted.

12

10

8

3.1

3.05

3

Active Mode Current

6

2.95

2.9

4

2

5-dBm Setting

0

2.85

-40 -30 -20 -10

0

10 20 30 40 50 60 70 80

Temperature (èC)

-40 -30 -20 -10

0

10 20 30 40 50 60 70 80

Temperature (èC)

Figure 5-16. TX Mode Current Consumption vs Tempera^Dtu⁰¹r⁶e

D006

Figure 5-17. Active Mode (MCU Running, No Peripherals)

Current Consumption vs Temperature

5

4

Active Mode Current

Standby Mode Current

3.5

4.5

4

3

2.5

2

3.5

3

1.5

1

2.5

0.5

0

2

1.8

2.3

2.8

VDDS (V)

3.3

3.8

-20 -10

0

10 20 30 40 50 60 70 80

Temperature (èC)

D007

D008

Figure 5-18. Active Mode (MCU Running, No Peripherals)

Current Consumption vs Supply Voltage (VDD)

Figure 5-19. Standby Mode Current Consumption

With RCOSC RTC vs Temperature

1006.4

11.4

Fs= 200 kHz, No Averaging

Fs= 200 kHz, 32 samples averaging

11.2

1006.2

1006

11

10.8

10.6

10.4

10.2

10

1005.8

1005.6

1005.4

1005.2

1005

9.8

9.6

9.4

1004.8

200300 500 1000 2000

5000 10000 20000

100000

1.8

2.3

2.8

VDDS (V)

3.3

3.8

Input Frequency (Hz)

D009

D012

Figure 5-20. SoC ADC Effective Number of Bits vs Input

Frequency (Internal Reference)

Figure 5-21. SoC ADC Output vs Supply Voltage (Fixed Input,

Internal Reference)

22

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Typical Characteristics (continued)

This section contains typical performance plots measured on the CC2650F128RHB device. They are published in the

CC2650 data sheet, and the plots relevant for the CC2650MODA device are repeated here. RF performance is specified in a

single-ended 50-Ω reference plane at the antenna feeding point with T_c= 25°C and V_DD= 3.0 V, unless otherwise noted.

10.5

10.4

10.3

10.2

10.1

10

1007.5

ENOB Internal Reference (No Averaging)

ENOB Internal Reference (32 Samples Averaging)

1007

1006.5

1006

9.9

1005.5

1005

9.8

9.7

1004.5

9.6

-40 -30 -20 -10

0

10 20 30 40 50 60 70 80

Temperature (èC)

1k

10k

Sampling Frequency (Hz)

100k 200k

D013

D009A

Figure 5-22. SoC ADC Output vs Temperature (Fixed Input,

Internal Reference)

Figure 5-23. SoC ADC ENOB vs Sampling Frequency

(Input Frequency = FS / 10)

3.5

3

2.5

2

1.5

1

0.5

0

-0.5

-1

-1.5

D010

ADC Code

Figure 5-24. SoC ADC DNL vs ADC Code (Internal Reference)

3

2

1

0

-1

-2

-3

-4

0

200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200

ADC Code

D011

Figure 5-25. SoC ADC INL vs ADC Code (Internal Reference)

Specifications

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6 Detailed Description

6.1 Overview

Figure 6-1 shows the core modules of the CC2650MODA device.

6.2 Functional Block Diagram

SimpleLink CC2650MODA Wireless MCU Module

32.768-kHz

24-MHz Crystal

Crystal

Oscillator

RF Balun

Oscillator

RF core

cJTAG

ROM

Main CPU

ADC

128-KB

Flash

ARM

Cortex-M3

Digital PLL

DSP Modem

8-KB

Cache

4-KB

SRAM

ARM

Cortex-M0

20-KB

SRAM

ROM

Sensor Controller

General Peripherals / Modules

I²C

UART

4× 32-bit Timers

Sensor Controller Engine

2× SSI (SPI, µWire, TI)

Watchdog Timer

TRNG

12-bit ADC, 200 ks/s

2× Analog Comparators

SPI / I²C Digital Sensor IF

Constant Current Source

Time-to-Digital Converter

2-KB SRAM

I2S

15 GPIOs

AES

Temp. / Batt. Monitor

RTC

32 ch. µDMA

DC-DC Converter

Figure 6-1. CC2650MODA Functional Block Diagram

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6.3 Main CPU

The SimpleLink CC2650MODA wireless MCU contains an ARM Cortex-M3 32-bit CPU, which runs the

application and the higher layers of the protocol stack.

The Cortex-M3 processor provides a high-performance, low-cost platform that meets the system

requirements of minimal memory implementation, and low-power consumption, while delivering

outstanding computational performance and exceptional system response to interrupts.

Cortex-M3 features include:

•

32-bit ARM Cortex-M3 architecture optimized for small-footprint embedded applications

Outstanding processing performance combined with fast interrupt handling

ARM Thumb^®-2 mixed 16- and 32-bit instruction set delivers the high performance expected of a 32-bit

ARM core in a compact memory size usually associated with 8- and 16-bit devices, typically in the

range of a few kilobytes of memory for microcontroller-class applications:

–

Single-cycle multiply instruction and hardware divide

Atomic bit manipulation (bit-banding), delivering maximum memory use and streamlined peripheral

control

–

Unaligned data access, enabling data to be efficiently packed into memory

•

Fast code execution permits slower processor clock or increases sleep mode time

Harvard architecture characterized by separate buses for instruction and data

Efficient processor core, system, and memories

Hardware division and fast digital-signal-processing oriented multiply accumulate

Saturating arithmetic for signal processing

Deterministic, high-performance interrupt handling for time-critical applications

Enhanced system debug with extensive breakpoint and trace capabilities

Serial wire trace reduces the number of pins required for debugging and tracing

Migration from the ARM7™ processor family for better performance and power efficiency

Optimized for single-cycle flash memory use

Ultra-low-power consumption with integrated sleep modes

1.25 DMIPS per MHz

6.4 RF Core

The RF core contains an ARM Cortex-M0 processor that interfaces the analog RF and base-band

circuitries, handles data to and from the system side, and assembles the information bits in a given packet

structure. The RF core offers a high-level, command-based API to the main CPU.

The RF core can autonomously handle the time-critical aspects of the radio protocols (802.15.4 RF4CE

and ZigBee, Bluetooth low energy) thus offloading the main CPU and leaving more resources for the user

application.

The RF core has a dedicated 4-KB SRAM block and runs initially from separate ROM memory. The ARM

Cortex-M0 processor is not programmable by customers.

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6.5 Sensor Controller

The Sensor Controller contains circuitry that can be selectively enabled in standby mode. The peripherals

in this domain may be controlled by the Sensor Controller Engine, which is a proprietary power-optimized

CPU. This CPU can read and monitor sensors or perform other tasks autonomously, thereby significantly

reducing power consumption and offloading the main Cortex-M3 CPU.

The Sensor Controller is set up using a PC-based configuration tool, called Sensor Controller Studio, and

typical use cases may be (but are not limited to):

•

Analog sensors using integrated ADC

Digital sensors using GPIOs and bit-banged I²C or SPI

UART communication for sensor reading or debugging

Capacitive sensing

Waveform generation

Pulse counting

Keyboard scan

Quadrature decoder for polling rotation sensors

Oscillator calibration

The peripherals in the Sensor Controller include the following:

•

The low-power clocked comparator can be used to wake the device from any state in which the

comparator is active. A configurable internal reference can be used with the comparator. The output of

the comparator can also be used to trigger an interrupt or the ADC.

•

Capacitive sensing functionality is implemented through the use of a constant current source, a time-

to-digital converter, and a comparator. The continuous time comparator in this block can also be used

as a higher-accuracy alternative to the low-power clocked comparator. The Sensor Controller will take

care of baseline tracking, hysteresis, filtering and other related functions.

•

The ADC is a 12-bit, 200-ksamples/s ADC with eight inputs and a built-in voltage reference. The ADC

can be triggered by many different sources, including timers, I/O pins, software, the analog

comparator, and the RTC.

•

The Sensor Controller also includes a SPI/I²C digital interface.

The analog modules can be connected to up to eight different GPIOs.

The peripherals in the Sensor Controller can also be controlled from the main application processor.

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Table 6-1 lists the GPIOs that are connected to the Sensor Controller.

Table 6-1. GPIOs Connected to the Sensor Controller⁽¹⁾

ANALOG CAPABLE

16.9 × 11 MOH DIO NUMBER

Y

N

14

13

12

11

9

10

8

7

4

3

2

1

0

(1) Up to 13 pins can be connected to the Sensor Controller. Up to eight

of these pins can be connected to analog modules

6.6 Memory

The flash memory provides nonvolatile storage for code and data. The flash memory is in-system

programmable.

The SRAM (static RAM) can be used for both storage of data and execution of code and is split into two

4-KB blocks and two 6-KB blocks. Retention of the RAM contents in standby mode can be enabled or

disabled individually for each block to minimize power consumption. In addition, if flash cache is disabled,

the 8KB of cache can be used as a general-purpose RAM.

The ROM provides preprogrammed embedded TI-RTOS kernel, Driverlib and lower layer protocol stack

software (802.15.4 MAC and Bluetooth low energy Controller). The ROM also contains a bootloader that

can be used to reprogram the device using SPI or UART.

6.7 Debug

The on-chip debug support is done through a dedicated cJTAG (IEEE 1149.7) or JTAG (IEEE 1149.1)

interface.

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6.8 Power Management

To minimize power consumption, the CC2650MODA device supports a number of power modes and

power-management features (see Table 6-2).

Table 6-2. Power Modes

SOFTWARE-CONFIGURABLE POWER MODES

RESET PIN

HELD

MODE

ACTIVE

IDLE

Off

STANDBY

Off

SHUTDOWN

CPU

Active

Off

Flash

On

Available

On

Off

SRAM

On

Off

Radio

Available

On

Off

Supply System

Current

Wake-up time to CPU active⁽¹⁾

Register retention

SRAM retention

On

Duty Cycled

1 µA

Off

1.45 mA + 31 µA/MHz

550 µA

14 µs

Full

0.15 µA

1015 µs

No

0.1 µA

1015 µs

No

–

151 µs

Partial

Full

No

XOSC_HF or

RCOSC_HF

XOSC_HF or

RCOSC_HF

High-speed clock

Low-speed clock

Off

XOSC_LF or

RCOSC_LF

XOSC_LF or

RCOSC_LF

XOSC_LF or

RCOSC_LF

Peripherals

Available

Active

Available

Active

Off

Available

Duty Cycled⁽²⁾

Active

Off

Sensor Controller

Wake up on RTC

Off

Wake up on pin edge

Wake up on reset pin

Brown Out Detector (BOD)

Power On Reset (POR)

Available

Off

Available

N/A

Active

N/A

(1) Not including RTOS overhead

(2) The Brown Out Detector is disabled between recharge periods in STANDBY. Lowering the supply voltage below the BOD threshold

between two recharge periods while in STANDBY may cause the BOD to lock the device upon wake-up until a Reset or POR releases

it. To avoid this, TI recommends that STANDBY mode is avoided if there is a risk that the supply voltage (VDD) may drop below the

specified operating voltage range. For the same reason, it is also good practice to ensure that a power cycling operation, such as a

battery replacement, triggers a Power-on-reset by ensuring that the VDD decoupling network is fully depleted before applying supply

voltage again (for example, inserting new batteries).

In active mode, the application Cortex-M3 CPU is actively executing code. Active mode provides normal

operation of the processor and all of the peripherals that are currently enabled. The system clock can be

any available clock source (see Table 6-2).

In idle mode, all active peripherals can be clocked, but the Application CPU core and memory are not

clocked and no code is executed. Any interrupt event will bring the processor back into active mode.

In standby mode, only the always-on domain (AON) is active. An external wake event, RTC event, or

sensor-controller event is required to bring the device back to active mode. MCU peripherals with retention

do not need to be reconfigured when waking up again, and the CPU continues execution from where it

went into standby mode. All GPIOs are latched in standby mode.

In shutdown mode, the device is turned off entirely, including the AON domain and the Sensor Controller.

The I/Os are latched with the value they had before entering shutdown mode. A change of state on any

I/O pin, defined as a wake from Shutdown pin, wakes up the device and functions as a reset trigger. The

CPU can differentiate between a reset in this way, a reset-by-reset pin, or a power-on-reset by reading the

reset status register. The only state retained in this mode is the latched I/O state and the flash memory

contents.

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The Sensor Controller is an autonomous processor that can control the peripherals in the Sensor

Controller independently of the main CPU, which means that the main CPU does not have to wake up, for

example, to execute an ADC sample or poll a digital sensor over SPI. The main CPU saves both current

and wake-up time that would otherwise be wasted. The Sensor Controller Studio enables the user to

configure the sensor controller and choose which peripherals are controlled and which conditions wake up

the main CPU.

6.9 Clock Systems

The CC2650MODA device supports two external and two internal clock sources.

A 24-MHz crystal is required as the frequency reference for the radio. This signal is doubled internally to

create a 48-MHz clock.

The 32-kHz crystal is optional. Bluetooth low energy requires a slow-speed clock with better than

±500-ppm accuracy if the device is to enter any sleep mode while maintaining a connection. The internal

32-kHz RC oscillator can in some use cases be compensated to meet the requirements. The low-speed

crystal oscillator is designed for use with a 32-kHz watch-type crystal.

The internal high-speed oscillator (48 MHz) can be used as a clock source for the CPU subsystem.

The internal low-speed oscillator (32.768 kHz) can be used as a reference if the low-power crystal

oscillator is not used.

The 32-kHz clock source can be used as external clocking reference through GPIO.

6.10 General Peripherals and Modules

The I/O controller controls the digital I/O pins and contains multiplexer circuitry to allow a set of peripherals

to be assigned to I/O pins in a flexible manner. All digital I/Os are interrupt and wake-up capable, have a

programmable pullup and pulldown function and can generate an interrupt on a negative or positive edge

(configurable). When configured as an output, pins can function as either push-pull or open-drain. Five

GPIOs have high-drive capabilities (marked in bold in Section 4).

The SSIs are synchronous serial interfaces that are compatible with SPI, MICROWIRE, and TI's

synchronous serial interfaces. The SSIs support both SPI master and slave up to 4 MHz.

The UART implements a universal asynchronous receiver/transmitter function. It supports flexible baud-

rate generation up to a maximum of 3 Mbps.

Timer 0 is a general-purpose timer module (GPTM), which provides two 16-bit timers. The GPTM can be

configured to operate as a single 32-bit timer, dual 16-bit timers or as a PWM module.

Timer 1, Timer 2, and Timer 3 are also GPTMs. Each of these timers is functionally equivalent to Timer 0.

In addition to these four timers, the RF core has its own timer to handle timing for RF protocols; the RF

timer can be synchronized to the RTC.

The I²C interface is used to communicate with devices compatible with the I²C standard. The I²C interface

is capable of 100-kHz and 400-kHz operation, and can serve as both I²C master and I²C slave.

The TRNG module provides a true, nondeterministic noise source for the purpose of generating keys,

initialization vectors (IVs), and other random number requirements. The TRNG is built on 24 ring

oscillators that create unpredictable output to feed a complex nonlinear combinatorial circuit.

The watchdog timer is used to regain control if the system fails due to a software error after an external

device fails to respond as expected. The watchdog timer can generate an interrupt or a reset when a

predefined time-out value is reached.

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The device includes a direct memory access (µDMA) controller. The µDMA controller provides a way to

offload data transfer tasks from the Cortex-M3 CPU, allowing for more efficient use of the processor and

the available bus bandwidth. The µDMA controller can perform transfer between memory and peripherals.

The µDMA controller has dedicated channels for each supported on-chip module and can be programmed

to automatically perform transfers between peripherals and memory as the peripheral is ready to transfer

more data. Some features of the µDMA controller include the following (this is not an exhaustive list):

•

Highly flexible and configurable channel operation of up to 32 channels

Transfer modes: memory-to-memory, memory-to-peripheral, peripheral-to-memory, and peripheral-to-

peripheral

•

Data sizes of 8, 16, and 32 bits

The AON domain contains circuitry that is always enabled, except in Shutdown mode (where the digital

supply is off). This circuitry includes the following:

•

The RTC can be used to wake the device from any state where it is active. The RTC contains three

compare and one capture registers. With software support, the RTC can be used for clock and

calendar operation. The RTC is clocked from the 32-kHz RC oscillator or crystal. The RTC can also be

compensated to tick at the correct frequency even when the internal 32-kHz RC oscillator is used

instead of a crystal.

•

The battery monitor and temperature sensor are accessible by software and give a battery status

indication as well as a coarse temperature measure.

6.11 System Architecture

Depending on the product configuration, CC26xx can function either as a Wireless Network Processor

(WNP—an IC running the wireless protocol stack, with the application running on a separate MCU), or as

a System-on-Chip (SoC), with the application and protocol stack running on the ARM Cortex-M3 core

inside the device.

In the first case, the external host MCU communicates with the device using SPI or UART. In the second

case, the application must be written according to the application framework supplied with the wireless

protocol stack.

6.12 Certification

The CC2650MODA module is certified to the standards listed in Table 6-3 (with IDs where applicable).

Table 6-3. CC2650MODA List of Certifications

REGULATORY BODY

SPECIFICATION

Part 15C:2015 + MPE FCC 1.1307 RF Exposure (Bluetooth)

Part 15C:2015 + MPE FCC 1.1307 RF Exposure (802.15.4)

RSS-102 (MPE) and RSS-247 (Bluetooth)

RSS-102 (MPE) and RSS-247 (IEEE 802.15.4)

EN 300 328 V2.1.1 (Bluetooth)

ID (IF APPLICABLE)

FCC (USA)

FCC ID: ZAT26M1

IC (Canada)

ID: 451H-26M1

EN 300 328 V2.1.1 (802.15.4)

EN 62479:2010 (MPE)

Draft EN 301 489-1 V2.2.0 (2017-03)

Draft EN 301 489-1 V3.2.0 (2017-03)

EN 55024:2010 + A1:2015

ETSI/CE (Europe)

EN 55032:2015 + AC:2016-07

EN 60950-1:2006/A11:2009/A1:2010/A12:2011/A2:2013

ARIB STD-T66

No: 201-160413/00

D 16 0093 201/00

Japan MIC

JATE

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6.12.1 Regulatory Information Europe

Hereby, Texas Instruments Inc. declares that the radio equipment type CC2650MODA is in compliance

with Directive 2014/53/EU.

The full text of the EU Declaration of Conformity (DoC) is available on the CC2650MODA technical

documents page. The compliance has been verified in the operating frequency band of 2400 MHz to

2483.5 MHz. Developers and integrators that incorporate the CC2650MODA RF Module in any end

products are responsible for obtaining applicable regulatory approvals for such end product.

NOTE

The CC2650MODA has been tested in the 2400-GHz to 2483.5-GHz ISM frequency band at

3.3 V with a maximum peak power of 5.056-dBm EIRP across the temperature range –40°C

to +85°C and tolerance.

6.12.2 Federal Communications Commission Statement

You are cautioned that changes or modifications not expressly approved by the part responsible for

compliance could void the user’s authority to operate the equipment.

This device complies with Part 15 of the FCC Rules. Operation is subject to the following two

conditions:

1. This device may not cause harmful interference and

2. This device must accept any interference received, including interference that may cause undesired

operation of the device.

FCC RF Radiation Exposure Statement:

This equipment complies with FCC radiation exposure limits set forth for an uncontrolled environment. End

users must follow the specific operating instructions for satisfying RF exposure limits. This transmitter

must not be colocated or operating with any other antenna or transmitter.

6.12.3 Canada, Industry Canada (IC)

This device complies with Industry Canada licence-exempt RSS standards.

Operation is subject to the following two conditions:

1. This device may not cause interference, and

2. This device must accept any interference, including interference that may cause undesired operation of

the device

Le présent appareil est conforme aux CNR d'Industrie Canada applicables aux appareils radio

exempts de licence

L'exploitation est autorisée aux deux conditions suivantes:

1. l'appareil ne doit pas produire de brouillage, et

2. l'utilisateur de l'appareil doit accepter tout brouillage radioélectrique subi, même si le brouillage est

susceptible d'en compromettre le fonctionnement.

IC RF Radiation Exposure Statement:

To comply with IC RF exposure requirements, this device and its antenna must not be co-located or

operating in conjunction with any other antenna or transmitter.

Pour se conformer aux exigences de conformité RF canadienne l'exposition, cet appareil et son antenne

ne doivent pas étre co-localisés ou fonctionnant en conjonction avec une autre antenne ou transmetteur.

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6.12.4 Japan (JATE ID)

JATE ID is D 16 0093 201

For units already sold and marked with JATE ID: D 16 0086 201, please publicize to users that the JATE

ID: D 16 0086 201 should be read as D 16 0093 201 (for example, clients web page, by software update,

or similar).

6.13 End Product Labeling

This module is designed to comply with the FCC statement, FCC ID: ZAT26M1. The host system using

this module must display a visible label indicating the following text:

"Contains FCC ID: ZAT26M1"

This module is designed to comply with the IC statement, IC: 451H-26M1. The host system using this

module must display a visible label indicating the following text:

"Contains IC: 451H-26M1"

6.14 Manual Information to the End User

The OEM integrator must be aware not to provide information to the end user regarding how to install or

remove this RF module in the user’s manual of the end product that integrates this module.

NOTE

Operation outside of test conditions as documented in this datasheet is not supported and

may void TI’s warranty. Should the user choose to configure the CC2650MODA to operate

outside of the test conditions, the device must be operated inside a protected and controlled

environment, such as an RF shielded chamber and user must ensure compliance with

regulatory requirements.

The end user's manual must include all required regulatory information and warnings as shown in this

document.

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6.15 Module Marking

Figure 6-2 shows the marking for the SimpleLink™ CC2650MODA module.

Figure 6-2. SimpleLink CC2650MODA Module Marking

Table 6-4. Module Descriptions

MARKING

DESCRIPTION

Model

CC2650MODA

LTC (lot trace code):

•

Y = Year

YMWLLLC

M = Month

WLLLLC = Reserved for internal use

ZAT26M1

FCC ID: single modular FCC grant ID

IC: single modular IC grant ID

451H-26M1

MIC compliance mark

JATE ID: Japan module grant ID

R 201-160413

ARIB STD-T66 ID: Japan modular grant ID

T D160093201

Bluetooth compliance mark

CE compliance mark

CE

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7 Application, Implementation, and Layout

NOTE

Information in the following applications sections is not part of the TI component

specification, and TI does not warrant its accuracy or completeness. TI's customers are

responsible for determining suitability of components for their purposes. Customers should

validate and test their design implementation to confirm system functionality.

NOTE

TI does not recommend the use of conformal coating or similar material on the module. This

coating can lead to localized stress on the solder connections inside the module and impact

the module reliability. Use caution during the module assembly process to the final PCB to

avoid the presence of foreign material inside the module.

7.1 Application Information

7.1.1 Typical Application Circuit

No external components are required for the operation of the CC2650MODA device. Figure 7-1 shows the

application circuit.

VDDS

U1

DIO0

DIO1

DIO2

DIO3

DIO4

DIO5

DIO6

DIO7

DIO8

DIO9

DIO10

DIO11

DIO12

DIO13

DIO14

4

5

6

7

8

11

12

14

15

16

17

18

19

20

21

22

23

DIO_0

DIO_1

DIO_2

DIO_3

DIO_4

DIO_5/JTAG_TDO

DIO_6/JTAG_TDI

DIO_7

DIO_8

DIO_9

DIO_10

DIO_11

DIO_12

DIO_13

DIO_14

VDDS

2

24

VDDS

NC_2

NC_24

R28

100k

nReset

JTAG-TCK

JTAG-TMS

13

10

9

nRESET

JTAG_TCKC

JTAG_TMSC

26

27

28

29

EGP

1

3

25

GND

CC2650MODAMOH

Figure 7-1. CC2650MODA Application Circuit

34

Application, Implementation, and Layout

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7.2 Layout

7.2.1 Layout Guidelines

Use the following guidelines to lay out the CC2650MODA device:

•

The module must be placed close to the edge of the PCB.

TI recommends leaving copper clearance on all PCB layers underneath the antenna area, as shown in

Figure 7-2 and Figure 7-3.

•

TI recommends using a generous amount of ground vias to stitch together the ground planes on

different layers. Several ground vias should be placed close to the exposed ground pads of the

module.

•

No external decoupling is required.

The reset line should have an external pullup resistor unless the line is actively driven. Placement of

this component is not critical.

•

TI recommends leaving a clearance in the top-side copper plane underneath the RF test pads.

Figure 7-2. Top Layer

Figure 7-3. Bottom Layer

Application, Implementation, and Layout

35

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8 Environmental Requirements and Specifications

8.1 PCB Bending

The PCB follows IPC-A-600J for PCB twist and warpage < 0.75% or 7.5 mil per inch.

8.2 Handling Environment

8.2.1 Terminals

The product is mounted with motherboard through land-grid array (LGA). To prevent poor soldering, do

not make skin contact with the LGA portion.

8.2.2 Falling

The mounted components will be damaged if the product falls or is dropped. Such damage may cause the

product to malfunction.

8.3 Storage Condition

8.3.1 Moisture Barrier Bag Before Opened

A moisture barrier bag must be stored in a temperature of less than 30°C with humidity under 85% RH.

The calculated shelf life for the dry-packed product will be 12 months from the date the bag is sealed.

8.3.2 Moisture Barrier Bag Open

Humidity indicator cards must be blue, < 30%.

8.4 Baking Conditions

Products require baking before mounting if:

•

Humidity indicator cards read > 30%

Temp < 30°C, humidity < 70% RH, over 96 hours

Baking condition: 90°C, 12 to 24 hours

Baking times: 1 time

36

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8.5 Soldering and Reflow Condition

•

Heating method: Conventional convection or IR convection

Temperature measurement: Thermocouple d = 0.1 mm to 0.2 mm CA (K) or CC (T) at soldering

portion or equivalent method

•

Solder paste composition: Sn/3.0 Ag/0.5 Cu

Allowable reflow soldering times: 2 times based on the reflow soldering profile (see Figure 8-1)

Temperature profile: Reflow soldering will be done according to the temperature profile

(see Figure 8-1)

Figure 8-1. Temperature Profile for Evaluation of Solder Heat Resistance of a Component

(at Solder Joint)

Table 8-1. Temperature Profile

Profile Elements

Convection or IR⁽¹⁾

235 to 240°C typical (260°C maximum)

Peak temperature range

Pre-heat / soaking (150 to 200°C)

Time above melting point

Time with 5°C to peak

Ramp up

60 to 120 seconds

60 to 90 seconds

30 seconds maximum

< 3°C / second

Ramp down

< -6°C / second

(1) For details, refer to the solder paste manufacturer's recommendation.

NOTE

TI does not recommend the use of conformal coating or similar material on the SimpleLink™

module. This coating can lead to localized stress on the solder connections inside the

module and impact the module reliability. Use caution during the module assembly process

to the final PCB to avoid the presence of foreign material inside the module.

Environmental Requirements and Specifications

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9 器件和文档支持

9.1 器件命名规则

为了标明产品开发周期的各个产品阶段，TI 为所有部件号和/或日期代码添加了前缀。每个器件都具有以下

三个前缀/标识中的一个：X、P 或无（无前缀）（例如 CC2650MODA 正在批量生产，因此未分配前缀/标

识）。

器件开发进化流程：

X

试验器件不一定代表最终器件的电气规范标准并且不可使用生产组装流程。

原型器件不一定是最终芯片模型并且不一定符合最终电气标准规范。

完全合格的芯片模型的生产版本。

P

无

生产器件已进行完全特性化，并且器件的质量和可靠性已经完全论证。TI 的标准保修证书适用。

预测显示原型器件（X 或者 P）的故障率大于标准生产器件。由于它们的预计的最终使用故障率仍未定义，

德州仪器 (TI) 建议不要将这些器件用于任何生产系统。只有合格的产品器件将被使用。

TI 器件的命名规则还包括一个带有器件系列名称的后缀。这个后缀表示封装类型（例如，MOH）。

要获得 MOH 封装类型的 CC2650MODA 器件部件号，请参见本文档的“封装选项附录”（TI 网站

www.ti.com.cn），或者联系您的 TI 销售代表。

CC2650 MOD

A

MOH

PREFIX

PACKAGE DESIGNATOR

X = Experimental device

Blank = Qualified device

MOH = 29-pin Module

DEVICE FAMILY

ROM version 1

SimpleLink™ Multistandard

Wireless MCU

Flash = 128KB

DEVICE

MOD = Module

图 9-1. 器件命名规则

38

器件和文档支持

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9.2 工具和软件

德州仪器 (TI) 提供大量的开发工具，其中包括评估处理器性能、生成代码、开发算法工具、以及完全集成和

调试软件及硬件模块的工具。

下列产品为 CC2650MODA 器件应用：

软件工具

SmartRF Studio 7:

SmartRF Studio 是一款 PC 应用程序，可帮助无线电系统设计人员评估早期设计过程的 RF-IC。

•

测试无线数据包收发功能，连续波收发功能

将相关数据写入支持的评估板或调试器，评估定制板上的 RF 性能

可以不搭配任何硬件使用，但此时只能生成、编辑并导出无线配置设置

可与德州仪器 (TI) CCxxxx 系列 RF-IC 的多款开发套件搭配使用

Sensor Controller Studio：

Sensor Controller Studio 为 CC26xx 传感器控制器提供开发环境。此传感器控制器是 CC26xx 系列中的一

款专用功率优化型 CPU，可独立于系统 CPU 状态自主执行简单的后台任务。

•

允许使用 C 语言这类编程语言实现传感器控制器任务算法

输出传感器控制器接口驱动程序，其中整合了生成的传感器控制器机械代码和相关定义

通过使用集成传感器控制器任务测试和调试功能实现快速开发这有助于实现有效的传感器数据和算法验

证可视化。

IDE 和编译器

Code Composer Studio：

•

带有项目管理工具和编辑器的集成开发环境

Code Composer Studio (CCS) 6.1 及更高版本内置对 CC26xx 系列器件的支持功能。

优先支持的 XDS 调试器：XDS100v3、XDS110 和 XDS200

与 TI-RTOS 高度集成，支持 TI-RTOS 对象视图

IAR ARM Embedded Workbench

•

带有项目管理工具和编辑器的集成开发环境

IAR EWARM 7.30.3 及更高版本内置对 CC26xx 系列器件的支持功能。

广泛的调试器支持，支持 XDS100v3、XDS200、IAR I-Jet 和 Segger J-Link

带有项目管理工具和编辑器的集成开发环境

适用于 TI-RTOS 的 RTOS 插件

有关 CC2650MODA 平台开发支持工具的完整列表，请访问德州仪器 (TI) 网站 www.ti.com.cn。有关售价和

供货情况的信息，请联系最近的 TI 销售办事处或授权分销商。

器件和文档支持

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9.3 文档支持

如需接收文档更新通知，请访问 ti.com.cn 上的器件产品文件夹。单击右上角的通知我进行注册，即可每周

接收产品信息更改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。

以下文档对 CC2650MODA 器件进行了介绍。www.ti.com.cn 网站上提供了这些文档的副本。

符合性声明

《CC2650MODA EU 符合性声明 (DoC)》

勘误表

《CC2630 和 CC2650 SimpleLink™ 无线 MCU 勘误表》

技术参考手册

《CC13x0、CC26x0 SimpleLink™ 无线 MCU》

应用报告

《在 CC2650 模块上运行独立低功耗 Bluetooth® 应用》

《如何认证 Bluetooth(R) 低功耗产品》

用户指南

《CC2650 模块 BoosterPack™ 入门指南》

白皮书

《应该选择哪种 TI Bluetooth® 解决方案？》

更多文献

《借助经认证无线模块简化射频设计挑战》

9.4 德州仪器 (TI) 低功耗射频网站

TI 的低功耗射频网站提供所有最新产品、应用和设计笔记、FAQ 部分、新闻资讯以及活动更新。转至无线

连接：TI 的 SimpleLink™ 低于 1GHz 无线 MCU。

9.5 低功耗射频电子新闻简报

通过低功耗射频电子新闻简报，您能够了解到最新的产品、新闻稿、开发者相关新闻以及关于德州仪器 (TI)

低功耗射频产品其它新闻和活动。低功耗射频电子新闻简报文章包含可获取更多在线信息的链接。

访问：www.ti.com.cn/lprfnewsletter 立即注册

40

器件和文档支持

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9.6 社区资源

The following links connect to TI community resources. Linked contents are provided "AS IS" by the

respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views;

see TI's Terms of Use.

TI E2E™ Online Community The TI engineer-to-engineer (E2E) community was created to foster

collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge,

explore ideas and help solve problems with fellow engineers.

德州仪器 (TI) 嵌入式处理器 Wiki此网站的建立是为了帮助开发人员从德州仪器 (TI) 的嵌入式处理器入门并

且也为了促进与这些器件相关的硬件和软件的总体知识的创新和增长。

低功耗射频在线社区 TI E2E 支持社区的无线连接

•

论坛、视频和博客

射频设计帮助

E2E 交流互动

请点击此处加入我们。

低功耗射频开发者网络德州仪器 (TI) 建立了一个大型低功耗射频开发合作伙伴网络，帮助客户加快应用开

发。此网络中包括推荐的公司、射频顾问和独立设计工作室，他们可提供一系列硬件模块产品

和设计服务，其中包括：

•

射频电路、低功耗射频和ZigBee 设计服务

低功耗射频和 ZigBee 模块解决方案以及开发工具

射频认证服务和射频电路制造

如果需要有关模块、工程服务或开发工具的帮助：

请搜索低功耗射频开发者网络查找适合的合作伙伴。

9.7 其他信息

德州仪器 (TI) 为汽车、工业和消费类应用中所使用的专有应用和标准无线应用提供各种经济实用的低功耗

射频解决方案。其中包括适用于 1GHz 以下频段和 2.4GHz 频段的射频收发器、射频发送器、射频前端、

模块和片上系统以及各种软件解决方案。

此外，德州仪器 (TI) 还提供广泛的相关支持，例如开发工具、技术文档、参考设计、应用专业技术、客户支

持、第三方服务以及大学计划。

低功耗射频 E2E 在线社区设有技术支持论坛并提供视频和博客，您有机会在此与全球同领域工程师交流互

动。

凭借丰富的供选产品解决方案、终端应用可行方案以及广泛的技术支持，德州仪器 (TI) 能够为您提供最全面

的低功耗射频产品组合。

9.8 商标

IAR Embedded Workbench is a registered trademark of IAR Systems AB.

SmartRF, Code Composer Studio, SimpleLink, Z-Stack, LaunchPad, TI-RTOS, BoosterPack, E2E are

trademarks of Texas Instruments.

ARM7 is a trademark of ARM Limited (or its subsidiaries).

ARM, Cortex, Thumb are registered trademarks of ARM Limited (or its subsidiaries).

Bluetooth is a registered trademark of Bluetooth SIG, Inc.

CoreMark is a registered trademark of Embedded Microprocessor Benchmark Consortium.

IEEE Std 1241 is a trademark of The Institute of Electrical and Electronics Engineers, Inc.

IEEE is a registered trademark of The Institute of Electrical and Electronics Engineers, Inc.

ZigBee is a registered trademark of ZigBee Alliance, Inc.

ZigBee RF4CE is a trademark of Zigbee Alliance, Inc.

All other trademarks are the property of their respective owners.

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9.9 静电放电警告

ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可

能会损坏集成电路。

ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可

能会导致器件与其发布的规格不相符。

9.10 Export Control Notice

Recipient agrees to not knowingly export or re-export, directly or indirectly, any product or technical data

(as defined by the U.S., EU, and other Export Administration Regulations) including software, or any

controlled product restricted by other applicable national regulations, received from Disclosing party under

this Agreement, or any direct product of such technology, to any destination to which such export or re-

export is restricted or prohibited by U.S. or other applicable laws, without obtaining prior authorization from

U.S. Department of Commerce and other competent Government authorities to the extent required by

those laws.

9.11 Glossary

TI Glossary This glossary lists and explains terms, acronyms, and definitions.

10 机械、封装和可订购信息

10.1 封装信息

以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。数据如有变更，恕不另行通

知，且不会对此文档进行修订。如需获取此数据表的浏览器版本，请查阅左侧的导航栏。

42

机械、封装和可订购信息

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CC2650MODA

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10.3 PACKAGE MATERIALS INFORMATION

10.3.1 TAPE AND REEL INFORMATION

REEL DIMENSIONS

TAPE DIMENSIONS

K0

P1

W

B0

Reel

Diameter

Cavity

A0

A0 Dimension designed to accommodate the component width

B0 Dimension designed to accommodate the component length

K0 Dimension designed to accommodate the component thickness

Overall width of the carrier tape

W

P1 Pitch between successive cavity centers

Reel Width (W1)

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE

Sprocket Holes

Q1 Q2

Q3 Q4

Q1 Q2

Q3 Q4

User Direction of Feed

Pocket Quadrants

All dimensions are nominal.

Reel

Diameter

(mm)

Package

Type

Package

Drawing

Reel Width

W1 (mm)

A0

(mm)

B0

K0

P1

W

Pin1

Quadrant

Device

Pins

SPQ

(mm) (mm) (mm) (mm)

CC2650MODAMOHR

QFM

MOH

29

1200

330

32.5

11.4

17.4

2.9

16

32

Q1

44

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ZHCSFF6D –AUGUST 2016–REVISED JULY 2019

TAPE AND REEL BOX DIMENSIONS

Width (mm)

H

W

L

Package

Package Type

Device

CC2650MODAMOHR

Pins

SPQ

Length (mm)

Width (mm)

Height (mm)

Drawing

QFM

MOH

29

1200

352

348

56

机械、封装和可订购信息

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重要声明和免责声明

TI 均以“原样”提供技术性及可靠性数据（包括数据表）、设计资源（包括参考设计）、应用或其他设计建议、网络工具、安全信息和其他资

源，不保证其中不含任何瑕疵，且不做任何明示或暗示的担保，包括但不限于对适销性、适合某特定用途或不侵犯任何第三方知识产权的暗示

担保。

所述资源可供专业开发人员应用TI 产品进行设计使用。您将对以下行为独自承担全部责任：(1) 针对您的应用选择合适的TI 产品；(2) 设计、

验证并测试您的应用；(3) 确保您的应用满足相应标准以及任何其他安全、安保或其他要求。所述资源如有变更，恕不另行通知。TI 对您使用

所述资源的授权仅限于开发资源所涉及TI 产品的相关应用。除此之外不得复制或展示所述资源，也不提供其它TI或任何第三方的知识产权授权

许可。如因使用所述资源而产生任何索赔、赔偿、成本、损失及债务等，TI对此概不负责，并且您须赔偿由此对TI 及其代表造成的损害。

TI 所提供产品均受TI 的销售条款 (http://www.ti.com.cn/zh-cn/legal/termsofsale.html) 以及ti.com.cn上或随附TI产品提供的其他可适用条款的约

束。TI提供所述资源并不扩展或以其他方式更改TI 针对TI 产品所发布的可适用的担保范围或担保免责声明。IMPORTANT NOTICE

邮寄地址：上海市浦东新区世纪大道 1568 号中建大厦 32 楼，邮政编码：200122

PACKAGE MATERIALS INFORMATION

www.ti.com

10-Mar-2021

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device

Package Package Pins

Type Drawing

SPQ

Reel

A0

B0

K0

P1

W

Pin1

Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant

(mm) W1 (mm)

CC2650MODAMOHR

QFM

MOH

29

1200

330.0

32.4

11.4

17.4

2.9

16.0

32.0

Q1

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

10-Mar-2021

*All dimensions are nominal

Device

Package Type Package Drawing Pins

QFM MOH 29

SPQ

Length (mm) Width (mm) Height (mm)

383.0 353.0 58.0

CC2650MODAMOHR

1200

Pack Materials-Page 2

PACKAGE OUTLINE

MOH0029A

QFM - 2.69 mm max height

SCALE 1.000

QUAD FLAT MODULE

11.1

10.9

B

A

17.0

16.8

PIN 1 ID AREA

(

10.77)

PICK & PLACE

NOZZLE AREA

C

2.69 MAX

SEATING PLANE

6.9

4.065±0.05

0.45 0.05 TYP

10

16

22X 1.15

9

17

4.125±0.05

1.7±0.05

28

27

2X

6.9

2X

1.7±0.05

1.5 0.05

9.2

26

29

PKG

(1)

2

1

25

0.95

0.85

0.6

0.5

25X

2X ( 0.7)

1.27±0.05

0.1

C A B

C

5.721

±0.05

0.05

PKG

4222814/A 04/2016

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

www.ti.com

EXAMPLE BOARD LAYOUT

MOH0029A

QFM - 2.69 mm max height

QUAD FLAT MODULE

(11)

NO TRACES, VIAS, GND PLANE

OR SILK SCREEN SHOULD BE

LOCATED WITHIN THIS AREA

(8.45)

25X (0.55)

(R0.05) TYP

1

25

25X (0.9)

PKG

(16.9)

(

1.5)

(2.625)

29

26

2X (6.9)

(1.7)

(8)

27

28

(0.265)

(1.7)

(

0.2) VIA

TYP

17

9

22X (1.15)

10

16

PKG

(10.1)

LAND PATTERN EXAMPLE

SCALE:7X

0.05 MIN

ALL AROUND

0.05 MAX

ALL AROUND

METAL UNDER

SOLDER MASK

METAL

SOLDER MASK

OPENING

SOLDER MASK

OPENING

NON SOLDER MASK

DEFINED

SOLDER MASK

DEFINED

PADS 26-29

PADS 1-25

SOLDER MASK DETAILS

4222814/A 04/2016

NOTES: (continued)

3. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments

literature number SLUA271 (www.ti.com/lit/slua271).

www.ti.com

EXAMPLE STENCIL DESIGN

MOH0029A

QFM - 2.69 mm max height

QUAD FLAT MODULE

25X (0.55)

25X (0.9)

(R0.05) TYP

PKG

1

25

PKG

4X METAL

ALL AROUND

(2.625)

26

29

4X

1.383)

(

(2X 6.9)

(1.7)

(8)

28

27

(0.265)

(1.7)

17

9

22X (1.15)

10

16

(10.1)

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL

PRINTED SOLDER COVERAGE BY AREA

PADS 26-29: 85%

SCALE:10X

4222814/A 04/2016

NOTES: (continued)

4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

www.ti.com

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型号：	CC2650MODA
厂家：	TEXAS INSTRUMENTS
描述：	具有 128kB 闪存的 SimpleLink™ 32 位 Arm Cortex-M3 多协议 2.4GHz 无线模块无线无线模块闪存
文件：	总52页 (文件大小：2246K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CC2650MODA [TI]

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