BQ29706DSER [TI]
锂离子/锂聚合物高级单节电池保护器 IC 系列 | DSE | 6 | -40 to 85;型号: | BQ29706DSER |
厂家: | TEXAS INSTRUMENTS |
描述: | 锂离子/锂聚合物高级单节电池保护器 IC 系列 | DSE | 6 | -40 to 85 电池 光电二极管 |
文件: | 总35页 (文件大小:2318K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BQ2970, BQ2971, BQ2972, BQ2973
ZHCSCA0H –MARCH 2014 –REVISED JUNE 2021
具有成本效益的BQ297xx 电压和电流保护集成电路(适用于单节锂离子/锂聚
合物电池)
1 特性
2 应用
• 输入电压范围:VSS –0.3V 至12V
• FET 驱动:
– CHG 和DSG FET 驱动输出
• 外部FET 上针对过流保护(OCP) 的电压感应在
±5mV(典型值)以内
• 平板电脑
• 手机
• 手持式数据终端
3 说明
BQ2970 电池保护器件在高放电/充电电流运行或电池
过度充电情况下提供一个针对过流保护的精确监控和触
发阈值。
• 故障检测
– 过度充电检测(OVP)
– 过度放电检测(UVP)
– 充电过流检测(OCC)
– 放电过流检测(OCD)
– 负载短路检测(SCP)
• 针对电量耗尽电池的零电压充电
• 厂家设定的故障保护阈值
– 故障检测电压阈值
– 故障触发计时器
– 故障恢复计时器
• 在电池充电器未启用时的运行模式
– 正常模式ICC = 4µA
BQ2970 器件提供针对锂离子/锂聚合物电池的保护功
能,并且监控外部功率 FET,以便在高充电或放电电
流时提供保护。此外,还有过度充电和电量耗尽电池的
监控和保护。这些特性在正常模式运行中以极低的流耗
实现。
器件信息
封装(1)
封装尺寸(标称值)
器件型号
BQ2970、BQ2971、
BQ2972、BQ2973
WSON (6)
1.50mm × 1.50mm
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附
录。
– 关断Iq = 100nA
• 工作温度范围TA = –40°C 至+85°C
• 封装:
– 6 引脚DSE (1.50mm × 1.50mm × 0.75mm)
PACK+
0.0
œ0.5
œ1.0
œ1.5
œ2.0
œ2.5
œ3.0
œ3.5
œ4.0
V–
NC
330
BAT
VSS
COUT
DOUT
CELLP
CELLN
2.2k
PACK–
D
S
S
CHG
DSG
简化版原理图
0
20
40
60
80
100
120
œ40
œ20
Temperature (°C)
C012
OCD 检测准确度与温度之间的关系
本文档旨在为方便起见,提供有关TI 产品中文版本的信息,以确认产品的概要。有关适用的官方英文版本的最新信息,请访问
www.ti.com,其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SLUSBU9
BQ2970, BQ2971, BQ2972, BQ2973
ZHCSCA0H –MARCH 2014 –REVISED JUNE 2021
www.ti.com.cn
Table of Contents
9 Detailed Description......................................................14
9.1 Overview...................................................................14
9.2 Functional Block Diagram.........................................15
9.3 Feature Description...................................................15
9.4 Device Functional Modes..........................................15
10 Application and Implementation................................19
10.1 Application Information........................................... 19
10.2 Typical Application.................................................. 19
11 Power Supply Recommendations..............................22
12 Layout...........................................................................22
12.1 Layout Guidelines................................................... 22
12.2 Layout Example...................................................... 22
13 Device and Documentation Support..........................23
13.1 Related Documentation.......................................... 23
13.2 支持资源..................................................................23
13.3 Trademarks.............................................................23
13.4 Electrostatic Discharge Caution..............................23
13.5 Glossary..................................................................23
14 Mechanical, Packaging, and Orderable
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 Device Comparison Table...............................................3
6 Pin Configuration and Functions...................................3
6.1 Pin Descriptions..........................................................4
7 Specifications.................................................................. 4
7.1 Absolute Maximum Ratings........................................ 4
7.2 ESD Ratings............................................................... 4
7.3 Recommended Operating Conditions.........................5
7.4 Thermal Information....................................................5
7.5 DC Characteristics......................................................5
7.6 Programmable Fault Detection Thresholds................ 6
7.7 Programmable Fault Detection Timer Ranges............6
7.8 Typical Characteristics................................................7
8 Parameter Measurement Information..........................10
8.1 Timing Charts............................................................10
8.2 Test Circuits.............................................................. 12
8.3 Test Circuit Diagrams................................................14
Information.................................................................... 23
4 Revision History
注:以前版本的页码可能与当前版本的页码不同
Changes from Revision G (December 2018) to Revision H (June 2021)
Page
• Changed the BQ29728 and BQ29737 devices to Production Data....................................................................3
Changes from Revision F (December 2018) to Revision G (January 2020)
Page
• Changed the Device Comparison Table ............................................................................................................ 3
Copyright © 2021 Texas Instruments Incorporated
2
Submit Document Feedback
Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973
BQ2970, BQ2971, BQ2972, BQ2973
ZHCSCA0H –MARCH 2014 –REVISED JUNE 2021
www.ti.com.cn
5 Device Comparison Table
OCD
DELAY
(ms)
OVP DELAY
UVP DELAY
(ms)
OCC DELAY
(ms)
SCD DELAY
PART NUMBER(1) OVP (V)
UVP (V)
OCC (V)
OCD (V)
SCD (V)
(s)
(µs)
BQ29700
BQ29701
BQ29702
BQ29703
BQ29704
BQ29705
BQ29706
BQ29707
BQ29716
BQ29717
BQ29718
BQ29723
BQ29728
BQ29729
BQ29732
BQ29733
BQ29737
4.275
4.280
4.350
4.425
4.425
4.425
3.850
4.280
4.425
4.425
4.425
4.425
4.280
4.275
4.280
4.400
4.250
1.25
1.25
1
2.800
2.300
2.800
2.300
2.500
2.500
2.500
2.800
2.300
2.500
2.500
2.500
2.800
2.300
2.500
2.800
2.800
144
144
96
0.100
0.125
0.160
0.160
0.125
0.150
0.200
0.090
0.165
0.130
0.100
0.100
0.150
0.130
0.190
0.120
0.100
20
8
0.5
0.5
0.3
0.5
0.5
0.5
0.6
0.3
0.5
0.5
0.5
0.3
0.5
0.5
0.5
0.3
0.3
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
8
8
8
8
8
8
8
6
8
8
8
4
8
8
8
8
16
–0.100
–0.100
–0.155
–0.100
–0.100
–0.100
–0.150
–0.090
–0.100
–0.100
–0.100
–0.060
–0.100
–0.100
–0.100
–0.100
–0.050
16
8
1.25
1.25
1.25
1.25
1
20
20
8
20
8
144
96
8
16
8
1.25
1.25
1.25
1
20
20
8
20
8
96
8
1.25
1.25
1.25
1.25
1
144
20
8
8
144
20
8
8
96
16
0.25, 1,
1.25, 4.5
20, 96, 125, –0.045 to
144
8, 16, 20, 0.3, 0.4, 0.5,
48 0.6
BQ297xy
4, 6, 8, 16
250
3.85–4.6
2.0–2.8
0.090–0.200
–0.155
(1) All of the protections have a recovery delay time. The recovery timer starts as soon as the fault is triggered. The device starts to check
for a recovery condition only when the recovery timer expires. This is NOT a delay time between recovery condition to FETs recovery.
OVP recovery delay = 12 ms; UVP/OCC/OCD recovery delay = 8 ms.
6 Pin Configuration and Functions
NC
COUT
DOUT
1
2
3
6
5
4
V–
BAT
VSS
图6-1. DSE Package 6-PIN WSON Top View
表6-1. Pin Functions
PIN
TYPE
DESCRIPTION
NAME
BAT
NO.
5
P
O
VDD pin
COUT
DOUT
NC
2
Gate Drive Output for Charge FET
Gate Drive Output for Discharge FET
No Connection (electrically open, do not connect to BAT or VSS)
Ground pin
3
O
1
NC
P
VSS
4
6
I/O
Input pin for charger negative voltage
V–
Copyright © 2021 Texas Instruments Incorporated
Submit Document Feedback
3
Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973
BQ2970, BQ2971, BQ2972, BQ2973
ZHCSCA0H –MARCH 2014 –REVISED JUNE 2021
www.ti.com.cn
6.1 Pin Descriptions
6.1.1 Supply Input: BAT
This pin is the input supply for the device and is connected to the positive terminal of the battery pack. A 0.1-µF
input capacitor is connected to ground for filtering noise.
6.1.2 Cell Negative Connection: VSS
This pin is an input to the device for cell negative ground reference. Internal circuits associated with cell voltage
measurements and overcurrent protection input to differential amplifier for either Vds sensing or external sense
resistor sensing will be referenced to this node.
6.1.3 Voltage Sense Node: V–
This is a sense node used for measuring several fault detection conditions, such as overcurrent charging or
overcurrent discharging configured as Vds sensing for protection. This input, in conjunction with VSS, forms the
differential measurement for the stated fault detection conditions. A 2.2-kΩ resistor is connected between this
input pin and Pack–terminal of the system in the application.
6.1.4 Discharge FET Gate Drive Output: DOUT
This pin is an output to control the discharge FET. The output is driven from an internal circuitry connected to the
BAT supply. This output transitions from high to low when a fault is detected, and requires the DSG FET to turn
OFF. A 5-MΩ high impedance resistor is connected from DOUT to VSS for gate capacitance discharge when
the FET is turned OFF.
6.1.5 Charge FET Gate Drive Output: COUT
This pin is an output to control the charge FET. The output is driven from an internal circuitry connected to the
BAT supply. This output transitions from high to low when a fault is detected, and requires the CHG FET to turn
OFF. A 5-MΩ high impedance resistor is connected from COUT to Pack– for gate capacitance discharge when
FET is turned OFF.
7 Specifications
7.1 Absolute Maximum Ratings
MIN(1)
–0.3
MAX
12
UNIT
V
Input voltage: BAT
Supply control and input
BAT + 0.3
BAT + 0.3
BAT + 0.3
85
V
V–pin(pack–)
BAT –28
VSS –0.3
BAT –28
–40
DOUT (Discharge FET Output), GDSG (Discharge FET Gate Drive)
V
FET drive and protection COUT (Charge FET Output), GCHG (Charge FET Gate Drive)
Operating temperature: TFUNC
V
°C
°C
Storage temperature, Tstg
150
–55
(1) Stresses beyond those listed under Absolute Maximum Ratings can cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods can affect device
reliability.
7.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS–001, all pins(2)
±2000
Electrostatic
Discharge
(1)
VESD
V
Charged device model (CDM), per JEDEC specification JESD22-C101, all
pins(3)
±500
(1) Electrostatic discharge (ESD) to measure device sensitivity and immunity to damage caused by assembly line electrostatic discharges
into the device.
(2) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as 1000
V can have higher performance.
Copyright © 2021 Texas Instruments Incorporated
4
Submit Document Feedback
Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973
BQ2970, BQ2971, BQ2972, BQ2973
ZHCSCA0H –MARCH 2014 –REVISED JUNE 2021
www.ti.com.cn
(3) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as 250
V can have higher performance.
7.3 Recommended Operating Conditions
MIN
–0.3
MAX
8
UNIT
V
Positive input voltage: BAT
Supply control and input
FET drive and protection
BAT
BAT
BAT
85
V
Negative input voltage: V–
BAT –25
VSS
Discharge FET control: DOUT
Charge FET control: COUT
V
V
BAT –25
–40
Operating temperature: TAmb
Storage temperature: TS
°C
°C
°C
°C/W
150
300
250
–55
Temperature Ratings
Lead temperature (soldering 10 s)
Thermal resistance junction to ambient, θJA
7.4 Thermal Information
BQ297xx
THERMAL METRIC(1)
DSE (WSON)
12 PINS
190.5
UNIT
RθJA, High K
RθJC(top)
RθJB
Junction-to-ambient thermal resistance
Junction-to-case(top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
94.9
149.3
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case(bottom) thermal resistance
6.4
ψJT
152.8
ψJB
RθJC(bottom)
N/A
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
7.5 DC Characteristics
Typical Values stated where TA = 25°C and BAT = 3.6 V. Min/Max values stated where TA = –40°C to 85°C, and BAT = 3 V
to 4.2 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Current consumption
1.5
1.5
8
V
28
BAT –VSS
BAT –V–
VBAT
Device operating range
INORMAL
Current consumption in NORMAL mode
4
5.5
0.1
µA
µA
BAT = 3.8 V, V–= 0 V
BAT = V–= 1.5 V
IPower_down Current consumption in power down mode
FET Output, DOUT and COUT
VOL
VOH
VOL
VOH
Charge FET low output
Charge FET high output
Discharge FET low output
Discharge FET high output
IOL = 30 µA, BAT = 3.8 V
IOH = –30 µA, BAT = 3.8 V
IOL = 30 µA, BAT = 2 V
0.4
3.7
0.2
3.7
0.5
0.5
V
V
V
V
3.4
3.4
100
8
IOH = –30 µA, BAT = 3.8 V
Pullup Internal Resistance on V–
RV–D
Current sink on V–
IV–S
300
550
24
Resistance between V–and VBAT
VBAT = 1.8 V, V–= 0 V
kΩ
VBAT = 3.8 V
µA
Current sink on V–to VSS
Load short detection on V–
Copyright © 2021 Texas Instruments Incorporated
Submit Document Feedback
5
Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973
BQ2970, BQ2971, BQ2972, BQ2973
ZHCSCA0H –MARCH 2014 –REVISED JUNE 2021
www.ti.com.cn
7.5 DC Characteristics (continued)
Typical Values stated where TA = 25°C and BAT = 3.6 V. Min/Max values stated where TA = –40°C to 85°C, and BAT = 3 V
to 4.2 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
VBAT
MAX UNIT
–
Vshort
Short detection voltage
V
VBAT = 3.8 V and RPackN = 2.2 kΩ
1 V
0-V battery charge function
V0CHG
0-V battery charging start voltage
0-V battery charging function allowed
0-V battery charging function disallowed
1.7
V
0-V battery charge inhibit function
0-V battery charging inhibit voltage
threshold
V0INH
0.75
V
7.6 Programmable Fault Detection Thresholds
PARAMETER
CONDITION
MIN
TYP
MAX UNIT
TA = 25°C
10
20
mV
mV
–10
Factory Device Configuration: 3.85 V to
4.60 V in 50-mV steps
VOVP
Overcharge detection voltage
TA = 0°C to
60°C
–20
–20
–50
Overcharge release hysteresis
voltage
100 mV and (VSS –V–) > OCC (min) for release, TA
=
VOVP–Hys
VUVP
20
50
mV
mV
25°C
Over-discharge detection
voltage
Factory Device Configuration: 2.00 V to 2.80 V in 50-mV
steps, TA = 25°C
Over-discharge release
hysteresis voltage
VUVP+Hys
50
10
15
mV
mV
mV
100 mV and (BAT –V–) > 1 V for release, TA = 25°C
–50
–10
–15
TA = 25°C
Discharging overcurrent
detection voltage
Factory Device Configuration: 90 mV to
200 mV in 5-mV steps
VOCD
TA = –40°C
to 85°C
Release of Release of discharging
VOCD overcurrent detection voltage
1
V
Release when BAT –V–> 1 V
TA = 25°C
10
15
mV
mV
–10
–15
Charging overcurrent detection Factory Device Configuration: –45 mV
VOCC
TA = –40°C
to 85°C
voltage
to –155 mV in 5-mV steps
Release of Release of overcurrent
40
1
mV
mV
V
Release when VSS –V–≥OCC (min)
VOCC
VSCC
detection voltage
Factory Device Configuration: 300 mV,
400 mV, 500 mV, 600 mV
Short Circuit detection voltage
TA = 25°C
100
–100
Release of Short Circuit
detection voltage
VSCCR
Release when BAT –V–≥1 V
7.7 Programmable Fault Detection Timer Ranges
PARAMETER
CONDITION
MIN
TYP
MAX UNIT
tOVPD
tUVPD
Overcharge detection delay time Factory Device Configuration: 0.25 s, 1 s, 1.25 s, 4.5 s
20%
20%
s
–20%
Over-discharge detection delay
time
Factory Device Configuration: 20 ms, 96 ms, 125 ms, 144
ms
ms
–20%
–20%
Discharging overcurrent
detection delay time
tOCDD
Factory Device Configuration: 8 ms, 16 ms, 20 ms, 48 ms
Factory Device Configuration: 4 ms, 6 ms, 8 ms, 16 ms
20%
ms
Charging overcurrent detection
delay time
tOCCD
tSCCD
20%
50%
ms
µs
–20%
–50%
Short Circuit detection delay time 250 µs (fixed)
Copyright © 2021 Texas Instruments Incorporated
6
Submit Document Feedback
Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973
BQ2970, BQ2971, BQ2972, BQ2973
ZHCSCA0H –MARCH 2014 –REVISED JUNE 2021
www.ti.com.cn
7.8 Typical Characteristics
0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
6
5
4
3
2
1
0
0
20
40
60
80
100
120
œ40
œ20
0
20
40
60
80
100
120
œ40
œ20
Temperature (°C)
Temperature (°C)
C001
C002
VBAT = 1.5 V
VBAT = 3.9 V
图7-1. 1.5-V IBAT Versus Temperature
图7-2. 3.9-V IBAT Versus Temperature
1.34
œ1.32
1.32
1.30
1.28
1.26
1.24
1.22
1.20
1.18
œ1.34
œ1.36
œ1.38
œ1.40
œ1.42
œ1.44
œ1.46
0
20
40
60
80
100
120
0
20
40
60
80
100
120
œ40
œ20
œ40
œ20
Temperature (°C)
Temperature (°C)
C003
C004
FOSC, Setting = 1.255
kHz
VBAT, Setting = 0 V
图7-4. 0-V Charging Allowed Versus Temperature
图7-3. Internal Oscillator Frequency Versus
Temperature
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
4
2
0
œ2
œ4
œ6
œ8
œ10
œ12
0
20
40
60
80
100
120
0
20
40
60
80
100
120
œ40
œ20
œ40
œ20
Temperature (°C)
Temperature (°C)
C005
C006
OVP, Setting = 4.275 V
图7-5. 0-V Charging Disallowed Versus
Temperature
图7-6. OVP Detection Accuracy Versus
Temperature
Copyright © 2021 Texas Instruments Incorporated
Submit Document Feedback
7
Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973
BQ2970, BQ2971, BQ2972, BQ2973
ZHCSCA0H –MARCH 2014 –REVISED JUNE 2021
www.ti.com.cn
1350
1300
1250
1200
1150
1100
0
œ2
œ4
œ6
œ8
œ10
œ12
0
20
40
60
80
100
120
0
20
40
60
80
100
120
œ40
œ20
œ40
œ20
Temperature (°C)
Temperature (°C)
C007
C008
tOVPD, Setting = 1.25 s
UVP, Setting = 2.800 V
图7-7. OVP Detection Dely Time Versus
图7-8. UVP Detection Accuracy Versus
Temperature
Temperature
160
155
150
145
140
135
130
0.0
œ0.2
œ0.4
œ0.6
œ0.8
œ1.0
œ1.2
œ1.4
œ1.6
œ1.8
0
20
40
60
80
100
120
0
20
40
60
80
100
120
œ40
œ20
œ40
œ20
Temperature (°C)
Temperature (°C)
C009
C010
tUVPD, Setting = 144 ms
VOCC, Setting = –100
mV
图7-9. UVP Detection Delay Time Versus
Temperature
图7-10. OCC Detection Accuracy Versus
Temperature
8.6
8.4
8.2
8.0
7.8
7.6
7.4
7.2
7.0
0.0
œ0.5
œ1.0
œ1.5
œ2.0
œ2.5
œ3.0
œ3.5
œ4.0
0
20
40
60
80
100
120
0
20
40
60
80
100
120
œ40
œ20
œ40
œ20
Temperature (°C)
Temperature (°C)
C011
C012
tOCCD, Setting = 8 ms
VOCD, Setting = 100 mV
图7-11. OCC Detection Delay Time Versus
图7-12. OCD Detection Accuracy Versus
Temperature
Temperature
Copyright © 2021 Texas Instruments Incorporated
8
Submit Document Feedback
Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973
BQ2970, BQ2971, BQ2972, BQ2973
ZHCSCA0H –MARCH 2014 –REVISED JUNE 2021
www.ti.com.cn
22.5
22.0
21.5
21.0
20.5
20.0
19.5
19.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
18.5
0
20
40
60
80
100
120
0
20
40
60
80
100
120
œ40
œ20
œ40
œ20
Temperature (°C)
Temperature (°C)
C013
C014
tUVPD, Setting = 20 ms
VSCC, Setting = 500 mV
图7-13. OCD Detection Delay Time Versus
图7-14. SCC Detection Accuracy Versus
Temperature
Temperature
1.24
1.22
1.20
1.18
1.16
1.14
1.12
1.10
3.795
3.790
3.785
3.780
3.775
3.770
3.765
0
20
40
60
80
100
120
0
20
40
60
80
100
120
œ40
œ20
œ40
œ20
Temperature (°C)
Temperature (°C)
C015
C016
VBAT, Setting = 3.9 V
图7-15. Power On Reset Versus Temperature
图7-16. COUT Versus Temperature with Ioh = –30
µA
3.7160
3.7155
3.7150
3.7145
3.7140
3.7135
0
20
40
60
80
100
120
œ40
œ20
Temperature (°C)
C017
VBAT, Setting = 3.9 V
图7-17. DOUT Versus Temperature with Ioh = –30 µA
Copyright © 2021 Texas Instruments Incorporated
Submit Document Feedback
9
Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973
BQ2970, BQ2971, BQ2972, BQ2973
ZHCSCA0H –MARCH 2014 –REVISED JUNE 2021
www.ti.com.cn
8 Parameter Measurement Information
8.1 Timing Charts
Over-
Discharge
Normal
Overcharge
Normal
Normal
V
OVP
V
OVP– Hys
V
UVP– Hys
V
UVP
BAT
V
SS
BAT
V
SS
PACK–
BAT
V
OCD
V
SS
PACK–
t
UVPD
t
OVPD
Charger
Connected
Load
Connected
Charger
Connected
图8-1. Overcharge Detection, Over-Discharge Detection
Copyright © 2021 Texas Instruments Incorporated
10
Submit Document Feedback
Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973
BQ2970, BQ2971, BQ2972, BQ2973
ZHCSCA0H –MARCH 2014 –REVISED JUNE 2021
www.ti.com.cn
Normal
Discharge Overcurrent
Normal
Discharge Overcurrent
Normal
V
OVP
V
OVP–Hys
V
UVP+Hys
V
UVP
BAT
VSS
BAT
VSS
PACK–
BAT
V
SCC
V
OCD
VSS
t
OCDD
t
SCCD
Load
Connected
Load
Disconnected
Load Short-
Circuit
图8-2. Discharge Overcurrent Detection
Copyright © 2021 Texas Instruments Incorporated
Submit Document Feedback
11
Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973
BQ2970, BQ2971, BQ2972, BQ2973
ZHCSCA0H –MARCH 2014 –REVISED JUNE 2021
www.ti.com.cn
8.2 Test Circuits
The following tests are referenced as follows: The COUT and DOUT outputs are “H,” which are higher than
the threshold voltage of the external logic level FETs and regarded as ON state. “L” is less than the turn ON
threshold for external NMOS FETs and regarded as OFF state. The COUT pin is with respect to V–, and the
DOUT pin is with respect to VSS.
1. Overcharge detection voltage and overcharge release voltage (Test Circuit 1):
The overcharge detection voltage (VOVP) is measured between the BAT and VSS pins, respectively. Once
V1 is increased, the over-detection is triggered, and the delay timer expires. Then, COUT transitions from a
high to low state and reduces the V1 voltage to check for the overcharge hysteresis parameter (VOVP-Hys).
The delta voltage between overcharge detection voltages (VOVP) and the overcharge release occurs when
the CHG FET drive output goes from low to high.
2. Over-discharge detection voltage and over-discharge release voltage (Test Circuit 2):
Over-discharge detection (VUVP) is defined as the voltage between BAT and VSS at which the DSG drive
output goes from high to low by reducing the V1 voltage. V1 is set to 3.5 V and gradually reduced while V2 is
set to 0 V. The over-discharge release voltage is defined as the voltage between BAT and VSS at which the
DOUT drive output transition from low to high when V1 voltage is gradually increased from a VUVP condition.
The overcharge hysteresis voltage is defined as the delta voltage between VUVP and the instance at which
the DOUT output drive goes from low to high.
3. Discharge overcurrent detection voltage (Test Circuit 2):
The discharge overcurrent detection voltage (VOCD) is measured between V–and VSS pins and triggered
when the V2 voltage is increased above VOCD threshold with respect to VSS. This delta voltage once
satisfied will trigger an internal timer tOCDD before the DOUT output drive transitions from high to low.
4. Load short circuit detection voltage (Test Circuit 2):
Load short-circuit detection voltage (VSCC) is measured between V–and VSS pins and triggered when the
V2 voltage is increased above VSCC threshold with respect to VSS within 10 µs. This delta voltage, once
satisfied, triggers an internal timer tSCCD before the DOUT output drive transitions from high to low.
5. Charge overcurrent detection voltage (Test Circuit 2):
The charge overcurrent detection voltage (VOCC) is measured between VSS and V–pins and triggered
when the V2 voltage is increased above VOCC threshold with respect to V–. This delta voltage, once
satisfied, triggers an internal timer tOCCD before the COUT output drive transitions from high to low.
6. Operating current consumption (Test Circuit 2):
The operating current consumption IBNORMAL is the current measured going into the BAT pin under the
following conditions: V1 = 3.9 V and V2 = 0 V.
7. Power down current consumption (Test Circuit 2):
The operating current consumption IPower_down is the current measured going into the BAT pin under the
following conditions: V1 = 1.5 V and V2 = 1.5 V.
8. Resistance between V–and BAT pin (Test Circuit 3):
Measure the resistance (RV_D) between V–and BAT pins by setting the following conditions: V1 = 1.8 V
and V2 = 0 V.
9. Current sink between V–and VSS (Test Circuit 3):
Measure the current sink IV–S between V–and VSS pins by setting the following condition: V1 = 4 V.
10. COUT current source when activated High (Test Circuit 4):
Measure ICOUT current source on the COUT pin by setting the following conditions: V1 = 3.9 V, V2 = 0 V, and
V3 = 3.4 V.
11. COUT current sink when activated Low (Test Circuit 4):
Measure ICOUT current sink on COUT pin by setting the following conditions: V1 = 4.5 V, V2 = 0 V, and V3 =
0.5 V.
Copyright © 2021 Texas Instruments Incorporated
12
Submit Document Feedback
Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973
BQ2970, BQ2971, BQ2972, BQ2973
ZHCSCA0H –MARCH 2014 –REVISED JUNE 2021
www.ti.com.cn
12. DOUT current source when activated High (Test Circuit 4):
Measure IDOUT current source on DOUT pin by setting the following conditions: V1 = 3.9 V, V2 = 0 V, and V3
= 3.4 V.
13. DOUT current sink when activated Low (Test Circuit 4):
Measure IDOUT current sink on DOUT pin by setting the following conditions: V1 = 2.0 V, V2 = 0 V, and V3 =
0.4 V.
14. Overcharge detection delay (Test Circuit 5):
The overcharge detection delay time tOVPD is the time delay before the COUT drive output transitions from
high to low once the voltage on V1 exceeds the VOVP threshold. Set V2 = 0 V and then increase V1 until BAT
input exceeds the VOVP threshold, then check the time for when COUT goes from high to low.
15. Over-discharge detection delay (Test Circuit 5):
The over-discharge detection delay time tUVPD is the time delay before the DOUT drive output transitions
from high to low once the voltage on V1 decreases to VUVP threshold. Set V2 = 0 V and then decrease V1
until BAT input reduces to the VUVPthreshold, then check the time of when DOUT goes from high to low.
16. Discharge overcurrent detection delay (Test Circuit 5):
The discharge overcurrent detection delay time tOCDD is the time for DOUT drive output to transition from
high to low after the voltage on V2 is increased from 0 V to 0.35 V. V1 = 3.5 V and V2 starts from 0 V and
increases to trigger threshold.
17. Load short circuit detection delay (Test Circuit 5):
The load short-circuit detection delay time tSCCD is the time for DOUT drive output to transition from high to
low after the voltage on V2 is increased from 0 V to V1 –1 V. V1 = 3.5 V and V2 starts from 0 V and
increases to trigger threshold.
18. Charge overcurrent detection delay (Test Circuit 5):
The charge overcurrent detection delay time tOCCD is the time for COUT drive output to transition from high
to low after the voltage on V2 is decreased from 0 V to –0.3 V. V1 = 3.5 V and V2 starts from 0 V and
decreases to trigger threshold.
19. 0-V battery charge starting charger voltage (Test Circuit 2):
The 0-V charge for start charging voltage V0CHA is defined as the voltage between BAT and V–pins at
which COUT goes high when voltage on V2 is gradually decreased from a condition of V1 = V2 = 0 V.
20. 0-V battery charge inhibition battery voltage (Test Circuit 2):
The 0-V charge inhibit for charger voltage V0INH is defined as the voltage between BAT and VSS pins at
which COUT should go low as V1 is gradually decreased from V1 = 2 V and V2 = –4 V.
Copyright © 2021 Texas Instruments Incorporated
Submit Document Feedback
13
Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973
BQ2970, BQ2971, BQ2972, BQ2973
ZHCSCA0H –MARCH 2014 –REVISED JUNE 2021
www.ti.com.cn
8.3 Test Circuit Diagrams
V-
6
V-
6
5
4
1
2
3
NC
1
2
3
NC
I
BAT
220Ω
V2
COUT
DOUT
BAT
VSS
5
4
COUT
DOUT
BAT
VSS
A
V
COUT
V
VCOUT V
V1
V1
V
V
V
V
DOUT
DOUT
图8-3. Test Circuit 1
图8-4. Test Circuit 2
I
V-
V-
6
5
4
V-
6
5
4
A
1
2
3
NC
1
2
3
NC
I
COUT
I
BAT
V2
V2
A
COUT
DOUT
BAT
VSS
COUT
DOUT
BAT
VSS
A
I
DOUT
V3
A
V1
V1
V4
图8-6. Test Circuit 4
图8-5. Test Circuit 3
V-
6
5
4
1
2
3
NC
Oscilloscope
V2
COUT
DOUT
BAT
VSS
Oscilloscope
V1
图8-7. Test Circuit 5
9 Detailed Description
9.1 Overview
This BQ2970 device is a primary protector for a single-cell Li-ion/Li-polymer battery pack. The device uses a
minimum number of external components to protect for overcurrent conditions due to high discharge/charge
currents in the application. In addition, it monitors and helps to protect against battery pack overcharging or
depletion of energy in the pack. The BQ2970 device is capable of having an input voltage of 8 V from a charging
adapter and can tolerate a voltage of BAT – 25 V across the two input pins. In the condition when a fault is
triggered, there are timer delays before the appropriate action is taken to turn OFF either the CHG or DSG FETs.
The recovery period also has a timer delay once the threshold for recovery condition is satisfied. These
parameters are fixed once they are programmed. There is also a feature called zero voltage charging that
enables depleted cells to be charged to an acceptable level before the battery pack can be used for normal
operation. Zero voltage charging is allowed if the charger voltage is above 1.7 V. For Factory Programmable
Options, see 表9-1.
表9-1. Factory Programmable Options
PARAMETER
FACTORY DEVICE CONFIGURATION
VOVP
VUVP
VOCD
VOCC
VSCC
tOVPD
tUVPD
Overcharge detection voltage
3.85 V to 4.60 V in 50-mV steps
Over-discharge detection voltage
Discharging overcurrent detection voltage
Charging overcurrent detection voltage
Short Circuit detection voltage
2.00 V to 2.80 V in 50-mV steps
90 mV to 200 mV in 5-mV steps
–45 mV to –155 mV in 5-mV steps
300 mV, 400 mV, 500 mV, 600 mV
0.25 s, 1.00 s, 1.25 s, 4.50 s
Overcharge detection delay time
Over-discharge detection delay time
20 ms, 96 ms, 125 ms, 144 ms
Copyright © 2021 Texas Instruments Incorporated
14
Submit Document Feedback
Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973
BQ2970, BQ2971, BQ2972, BQ2973
ZHCSCA0H –MARCH 2014 –REVISED JUNE 2021
www.ti.com.cn
表9-1. Factory Programmable Options (continued)
PARAMETER
FACTORY DEVICE CONFIGURATION
tOCDD
tOCCD
tSCCD
Discharging overcurrent detection delay time
Charging overcurrent detection delay time
Short Circuit detection delay time
8 ms, 16 ms, 20 ms, 48 ms
4 ms, 6 ms, 8 ms, 16 ms
250 µs (fixed)
For available released devices, see the Released Device Configurations table.
9.2 Functional Block Diagram
Charger
Detection
Circuit
Counter
Oscillator
Logic circuit
Overcharge
Comparator (OVP)
with Hys
BAT 5
2
COUT
Overcharge
Current
Comparator
Delay
Short Detect
Over-Discharge
Comparator (UVP)
with Hys
Logic circuit
3
DOUT
Over-Discharge
Current Comparator
BAT
R
V–D
6 V–
4
VSS
I
V–S
9.3 Feature Description
The BQ2970 family of devices measures voltage drops across several input pins for monitoring and detection of
the following faults: OCC, OCD, OVP, and UVP. An internal oscillator initiates a timer to the fixed delays
associated with each parameter once the fault is triggered. Once the timer expires due to a fault condition, the
appropriate FET drive output (COUT or DOUT) is activated to turn OFF the external FET. The same method is
applicable for the recovery feature once the system fault is removed and the recovery parameter is satisfied,
then the recovery timer is initiated. If there are no reoccurrences of this fault during this period, the appropriate
gate drive is activated to turn ON the appropriate external FET.
9.4 Device Functional Modes
9.4.1 Normal Operation
This device monitors the voltage of the battery connected between BAT pin and VSS pin and the differential
voltage between V– pin and VSS pin to control charging and discharging. The system is operating in NORMAL
mode when the battery voltage range is between the over-discharge detection threshold (VUVP) and the
overcharge detection threshold (VOVP), and the V– pin voltage is within the range for charge overcurrent
threshold (VOCC) to over-discharge current threshold (VOCD) when measured with respect to VSS. If these
conditions are satisfied, the device turns ON the drive for COUT and DOUT FET control.
Copyright © 2021 Texas Instruments Incorporated
Submit Document Feedback
15
Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973
BQ2970, BQ2971, BQ2972, BQ2973
ZHCSCA0H –MARCH 2014 –REVISED JUNE 2021
www.ti.com.cn
CAUTION
When the battery is connected for the first time, the discharging circuit might not be enabled. In this
case, short the V–pin to the VSS pin.
Alternatively, connect the charger between the Pack+ and Pack–terminals in the system.
9.4.2 Overcharge Status
This mode is detected when the battery voltage measured is higher than the overcharge detection threshold
(VOVP) during charging. If this condition exists for a period greater than the overcharge detection delay (tOVPD) or
longer, the COUT output signal is driven low to turn OFF the charging FET to prevent any further charging of the
battery.
The overcharge condition is released if one of the following conditions occurs:
• If the V–pin is higher than the overcharge detection voltage (VOCC_Min), the device releases the overcharge
status when the battery voltage drops below the overcharge release voltage (VOVP-Hys).
• If the V–pin is higher than or equal to the over-discharge detection voltage (VOCD), the device releases the
overcharge status when the battery voltage drops below the overcharge detection voltage (VOVP).
The discharge is initiated by connecting a load after the overcharge detection. The V– pin rises to a voltage
greater than VSS due to the parasitic diode of the charge FET conducting to support the load. If the V– pin
voltage is higher than or equal to the discharge overcurrent detection threshold (VOCD), the overcurrent condition
status is released only if the battery voltage drops lower than or equal to the overcharge detection voltage
(VOVP).
CAUTION
1. If the battery is overcharged to a level greater than overcharge detection (VOVP) and the battery
voltage does not drop below the overcharge detection voltage (VOVP) with a heavy load
connected, the discharge overcurrent and load short-circuit detection features do not function
until the battery voltage drops below the overcharge detection voltage (VOVP). The internal
impedance of a battery is in the order of tens of mΩ, so application of a heavy load on the output
should allow the battery voltage to drop immediately, enabling discharge overcurrent detection
and load short-circuit detection features after an overcharge release delay.
2. When a charger is connected after an overcharge detection, the overcharge status does not
release even if the battery voltage drops below the overcharge release threshold. The
overcharge status is released when the V–pin voltage exceeds the overcurrent detection
voltage (VOCD) by removing the charger.
9.4.3 Over-Discharge Status
If the battery voltage drops below the over-discharge detection voltage (VUVP) for a time greater than (tUVPD) the
discharge control output, DOUT is switched to a low state and the discharge FET is turned OFF to prevent
further discharging of the battery. This is referred to as an over-discharge detection status. In this condition, the
V–pin is internally pulled up to BAT by the resistor RV–D. When this occurs, the voltage difference between V–
and BAT pins is 1.3 V or lower, and the current consumption of the device is reduced to power-down level
ISTANDBY. The current sink IV–S is not active in power-down state or over-discharge state. The power-down state
is released when a charger is connected and the voltage delta between V–and BAT pins is greater than 1.3 V.
If a charger is connected to a battery in over-discharge state and the voltage detected at the V–is lower than –
0.7 V, the device releases the over-discharge state and allows the DOUT pin to go high and turn ON the
discharge FET once the battery voltage exceeds over-discharge detection voltage (VUVP).
If a charger is connected to a battery in over-discharge state and the voltage detected at the V– is higher than
–0.7 V, the device releases the over-discharge state and allows the DOUT pin to go high and turn ON the
Copyright © 2021 Texas Instruments Incorporated
16
Submit Document Feedback
Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973
BQ2970, BQ2971, BQ2972, BQ2973
ZHCSCA0H –MARCH 2014 –REVISED JUNE 2021
www.ti.com.cn
discharge FET once the battery voltage exceeds over-discharge detection release hysteresis voltage
(VUVP +Hys).
9.4.4 Discharge Overcurrent Status (Discharge Overcurrent, Load Short-Circuit)
When a battery is in normal operation and the V– pin is equal to or higher than the discharge overcurrent
threshold for a time greater than the discharge overcurrent detection delay, the DOUT pin is pulled low to turn
OFF the discharge FET and prevent further discharge of the battery. This is known as the discharge overcurrent
status. In the discharge overcurrent status, the V–and VSS pins are connected by a constant current sink IV–S
.
When this occurs and a load is connected, the V– pin is at BAT potential. If the load is disconnected, the V–
pin goes to VSS (BAT/2) potential.
This device detects the status when the impedance between Pack+ and Pack–(see Figure 26) increases and is
equal to the impedance that enables the voltage at the V– pin to return to BAT – 1 V or lower. The discharge
overcurrent status is restored to the normal status.
Alternatively, by connecting the charger to the system, the device returns to normal status from discharge
overcurrent detection status, because the voltage at the V–pin drops to BAT –1 V or lower.
The resistance RV–D between V–and BAT is not connected in the discharge overcurrent detection status.
9.4.5 Charge Overcurrent Status
When a battery is in normal operation status and the voltage at V– pin is lower than the charge overcurrent
detection due to high charge current for a time greater than charge overcurrent detection delay, the COUT pin is
pulled low to turn OFF the charge FET and prevent further charging to continue. This is known as charge
overcurrent status.
The device is restored to normal status from charge overcurrent status when the voltage at the V–pin returns to
charge overcurrent detection voltage or higher by removing the charger from the system.
The charge overcurrent detection feature does not work in the over-discharge status.
The resistance RV–D between V–and BAT and the current sink IV–S is not connected in the charge overcurrent
status.
9.4.6 0-V Charging Function Enabled
This feature enables recharging a connected battery that has very low voltage due to self-discharge. When the
charger applies a voltage greater than or equal to V0CHG to Pack+ and Pack– connections, the COUT pin gate
drive is fixed by the BAT pin voltage.
Once the voltage between the gate and the source of the charging FET becomes equal to or greater than the
turn ON voltage due to the charger voltage, the charging FET is ON and the battery is charged with current flow
through the charging FET and the internal parasitic diode of the discharging FET. Once the battery voltage is
equal to or higher than the over-discharge release voltage, the device enters normal status.
CAUTION
1. Some battery providers do not recommend charging a depleted (self-discharged) battery.
Consult the battery supplier to determine whether to have the 0-V battery charger function.
2. The 0-V battery charge feature has a higher priority than the charge overcurrent detection
function. In this case, the 0-V charging will be allowed and the battery charges forcibly, which
results in charge overcurrent detection being disabled if the battery voltage is lower than the
over-discharge detection voltage.
9.4.7 0-V Charging Inhibit Function
This feature inhibits recharging a battery that has an internal short circuit of a 0-V battery. If the battery voltage is
below the charge inhibit voltage V0INH or lower, the charge FET control gate is fixed to the Pack– voltage to
Copyright © 2021 Texas Instruments Incorporated
Submit Document Feedback
17
Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973
BQ2970, BQ2971, BQ2972, BQ2973
ZHCSCA0H –MARCH 2014 –REVISED JUNE 2021
www.ti.com.cn
inhibit charging. When the battery is equal to V0INH or higher, charging can be performed. The 0-V charge inhibit
function is available in all configurations of the BQ297xx device.
CAUTION
Some battery providers do not recommend charging a depleted (self-discharged) battery. Consult
the battery supplier to determine whether to enable or inhibit the 0-V battery charger function.
9.4.8 Delay Circuit
The detection delay timers are based from an internal clock with a frequency of 10 kHz.
BAT
t
0 ≤ t ≤ t
D
D
SCCD
VSS
Time
tD
t
OCDD
˂
V
SCC
V
OCD
VSS
Time
图9-1. Delay Circuit
If the over-discharge current is detected, but remains below the over-discharge short circuit detection threshold,
the over-discharge detection conditions must be valid for a time greater than or equal to over-discharge current
delay tOCCD time before the DOUT goes low to turn OFF the discharge FET. However, during any time the
discharge overcurrent detection exceeds the short circuit detection threshold for a time greater than or equal to
load circuit detection delay tSCCD, the DOUT pin goes low in a faster delay for protection.
Copyright © 2021 Texas Instruments Incorporated
18
Submit Document Feedback
Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973
BQ2970, BQ2971, BQ2972, BQ2973
ZHCSCA0H –MARCH 2014 –REVISED JUNE 2021
www.ti.com.cn
10 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification, and TI
does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
10.1 Application Information
The BQ2970 devices are a family of primary protectors used for protection of the battery pack in the application.
The application drives two low-side NMOS FETs that are controlled to provide energy to the system loads or
interrupt the power in the event of a fault condition.
10.2 Typical Application
PACK+
V–
NC
330
BAT
VSS
COUT
DOUT
CELLP
CELLN
2.2k
PACK–
D
S
S
CHG
DSG
The 5-M resistor for an external gate-source is optional.
图10-1. Typical Application Schematic, BQ2970
10.2.1 Design Requirements
For this design example, use the parameters listed in 表10-1.
表10-1. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE at TA = 25°C
Input voltage range
4.5 V to 7 V
7 A
Maximum operating discharge current
Maximum Charge Current for battery pack
Overvoltage Protection (OVP)
4.5 A
4.275 V
1.2 s
Overvoltage detection delay timer
Overvoltage Protection (OVP) release voltage
Undervoltage Protection (UVP)
4.175 V
2.8 V
Undervoltage detection delay timer
150 ms
2.9 V
Undervoltage Protection (UVP) release voltage
Charge Overcurrent detection (OCC) voltage
Charge Overcurrent Detection (OCC) delay timer
Discharge Overcurrent Detection (OCD) voltage
Discharge Overcurrent Detection (OCD) delay timer
–70 mV
9 ms
100 mV
18 ms
Copyright © 2021 Texas Instruments Incorporated
Submit Document Feedback
19
Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973
BQ2970, BQ2971, BQ2972, BQ2973
ZHCSCA0H –MARCH 2014 –REVISED JUNE 2021
www.ti.com.cn
表10-1. Design Parameters (continued)
DESIGN PARAMETER
EXAMPLE VALUE at TA = 25°C
500 mV
250 µs
1 V
Load Short Circuit Detection SCC) voltage, BAT to –V ≤threshold
Load Short Circuit Detection (SCC) delay timer
Load Short Circuit release voltage, BAT to –V ≥Threshold
10.2.2 Detailed Design Procedure
Note
The external FET selection is important to ensure the battery pack protection is sufficient and
complies to the requirements of the system.
• FET Selection: Because the maximum desired discharge current is 7 A, ensure that the Discharge
Overcurrent circuit does not trigger until the discharge current is above this value.
• The total resistance tolerated across the two external FETs (CHG + DSG) should be 100 mV/7 A = 14.3 mΩ.
• Based on the information of the total ON resistance of the two switches, determine what would be the Charge
Overcurrent Detection threshold, 14.3 mΩ× 4.5 A = 65 mV. Selecting a device with a 70-mV trigger
threshold for Charge Overcurrent trigger is acceptable.
• The total Rds ON should factor in any worst-case parameter based on the FET ON resistance, de-rating due
to temperature effects and minimum required operation, and the associated gate drive (Vgs). Therefore, the
FET choice should meet the following criteria:
Vdss = 25 V
Each FET Rds ON = 7.5 mΩat Tj = 25°C and Vgs = 3.5 V
• Imax > 50 A to allow for short Circuit Current condition for 350 µs (max delay timer). The only limiting factor
during this condition is Pack Voltage/(Cell Resistance + (2 × FET_RdsON) + Trace Resistance).
• Use the CSD16406Q3 FET for the application.
• An RC filter is required on the BAT for noise, and enables the device to operate during sharp negative
transients. The 330-Ωresistor also limits the current during a reverse connection on the system.
• TI recommends placing a high impedance 5-MΩacross the gate source of each external FET to deplete any
charge on the gate-source capacitance.
Copyright © 2021 Texas Instruments Incorporated
20
Submit Document Feedback
Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973
BQ2970, BQ2971, BQ2972, BQ2973
ZHCSCA0H –MARCH 2014 –REVISED JUNE 2021
www.ti.com.cn
10.2.3 Application Performance Plots
Orange Line (Channel 1) = Power Up Ramp on BAT Pin
Turquoise Line (Channel 2) = DOUT Gate Drive Output
DOUT goes from low to high when UVP Recovery = UVP Set
Threshold +100 mV
Orange Line (Channel 1) = Power Down Ramp on BAT Pin
Turquoise Line (Channel 2) = DOUT Date Drive Output
DOUT goes from high to low when UVP threshold = UVP set
Threshold + set delay time
图10-2. UVP Recovery
图10-3. UVP Set Condition
Orange Line (Channel 1) = Power Up Ramp on BAT pin
Turquoise Line (Channel 2) = DOUT Gate Drive Output
Orange Line (Channel 1) = Power Up Ramp on BAT Pin
Turquoise Line (Channel 2) = COUT Gate Drive Output
图10-4. Initial Power Up, DOUT
图10-5. Initial Power Up, COUT
Orange Line (Channel 1) = Power Up Ramp on BAT Pin
Turquoise Line (Channel 2) = COUT Gate Drive Output
COUT goes from high to low when OVP threshold = OVP set
Threshold + set delay time
Orange Line (Channel 1) = Decrease Voltage on BAT Pin
Turquoise Line (Channel 2) = COUT Gate Drive Output
COUT goes from low to high when OVP Recovery = OVP Set
Threshold –100 mV
图10-6. OVP Set Condition
图10-7. OVP Recovery Condition
Copyright © 2021 Texas Instruments Incorporated
Submit Document Feedback
21
Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973
BQ2970, BQ2971, BQ2972, BQ2973
ZHCSCA0H –MARCH 2014 –REVISED JUNE 2021
www.ti.com.cn
11 Power Supply Recommendations
The recommended power supply for this device is a maximum 8-V operation on the BAT input pin.
12 Layout
12.1 Layout Guidelines
The following are the recommended layout guidelines:
1. Ensure the external power FETs are adequately compensated for heat dissipation with sufficient thermal
heat spreader based on worst-case power delivery.
2. The connection between the two external power FETs should be very close to ensure there is not an
additional drop for fault sensing.
3. The input RC filter on the BAT pin should be close to the terminal of the IC.
12.2 Layout Example
Power Trace Line
PACK+
V–
BAT
VSS
6
5
4
1
2
NC
COUT
DOUT
–
PACK
3
Power Trace Line
Power Trace Line
CSD16406Q3
CSD16406Q3
Power Trace
Via connects between two layers
图12-1. BQ2970 Board Layout
Copyright © 2021 Texas Instruments Incorporated
22
Submit Document Feedback
Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973
BQ2970, BQ2971, BQ2972, BQ2973
ZHCSCA0H –MARCH 2014 –REVISED JUNE 2021
www.ti.com.cn
13 Device and Documentation Support
13.1 Related Documentation
BQ29700 Single-Cell Li-Ion Protector EVM User's Guide (SLUUAZ3)
13.2 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料,可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范,并且不一定反映 TI 的观点;请参阅
TI 的《使用条款》。
13.3 Trademarks
TI E2E™ is a trademark of Texas Instruments.
所有商标均为其各自所有者的财产。
13.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
13.5 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Copyright © 2021 Texas Instruments Incorporated
Submit Document Feedback
23
Product Folder Links: BQ2970 BQ2971 BQ2972 BQ2973
重要声明和免责声明
TI 提供技术和可靠性数据(包括数据表)、设计资源(包括参考设计)、应用或其他设计建议、网络工具、安全信息和其他资源,不保证没
有瑕疵且不做出任何明示或暗示的担保,包括但不限于对适销性、某特定用途方面的适用性或不侵犯任何第三方知识产权的暗示担保。
这些资源可供使用TI 产品进行设计的熟练开发人员使用。您将自行承担以下全部责任:(1) 针对您的应用选择合适的TI 产品,(2) 设计、验
证并测试您的应用,(3) 确保您的应用满足相应标准以及任何其他安全、安保或其他要求。这些资源如有变更,恕不另行通知。TI 授权您仅可
将这些资源用于研发本资源所述的TI 产品的应用。严禁对这些资源进行其他复制或展示。您无权使用任何其他TI 知识产权或任何第三方知
识产权。您应全额赔偿因在这些资源的使用中对TI 及其代表造成的任何索赔、损害、成本、损失和债务,TI 对此概不负责。
TI 提供的产品受TI 的销售条款(https:www.ti.com/legal/termsofsale.html) 或ti.com 上其他适用条款/TI 产品随附的其他适用条款的约束。TI
提供这些资源并不会扩展或以其他方式更改TI 针对TI 产品发布的适用的担保或担保免责声明。重要声明
邮寄地址:Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2021,德州仪器(TI) 公司
PACKAGE OPTION ADDENDUM
www.ti.com
13-Dec-2022
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
BQ29700DSER
BQ29700DSET
BQ29701DSER
BQ29701DSET
BQ29702DSER
BQ29702DSET
BQ29703DSER
BQ29703DSET
BQ29704DSER
BQ29704DSET
BQ29705DSER
BQ29705DSET
BQ29706DSER
BQ29706DSET
BQ29707DSER
BQ29707DSET
BQ29716DSER
BQ29716DSET
BQ29717DSER
BQ29717DSET
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
NIPDAU
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
FA
FA
FY
FY
FZ
FZ
F1
F1
F2
F2
F3
F3
F4
F4
F5
F5
3P
3P
3Q
3Q
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
250
RoHS & Green
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
13-Dec-2022
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
BQ29718DSER
BQ29718DSET
BQ29723DSER
BQ29723DSET
BQ29728DSER
BQ29728DSET
BQ29729DSER
BQ29729DSET
BQ29732DSER
BQ29732DSET
BQ29733DSER
BQ29733DSET
BQ29737DSER
BQ29737DSET
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
6
6
6
6
6
6
6
6
6
6
6
6
6
6
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
NIPDAU
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
3R
3R
3S
3S
EJ
EJ
3T
3T
3U
3U
4Q
4Q
EI
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
EI
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
Addendum-Page 2
PACKAGE OPTION ADDENDUM
www.ti.com
13-Dec-2022
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com
12-Jun-2021
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
BQ29700DSER
BQ29700DSET
BQ29701DSER
BQ29701DSET
BQ29702DSER
BQ29702DSET
BQ29703DSER
BQ29703DSET
BQ29704DSER
BQ29704DSET
BQ29705DSER
BQ29705DSET
BQ29706DSER
BQ29706DSET
BQ29707DSER
BQ29707DSET
BQ29716DSER
BQ29716DSET
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
3000
250
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
Q2
Q2
Q2
Q2
Q2
Q2
Q2
Q2
Q2
Q2
Q2
Q2
Q2
Q2
Q2
Q2
Q2
Q2
3000
250
3000
250
3000
250
3000
250
3000
250
3000
250
3000
250
3000
250
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
12-Jun-2021
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
BQ29717DSER
BQ29717DSET
BQ29718DSER
BQ29718DSET
BQ29723DSER
BQ29723DSET
BQ29728DSER
BQ29728DSET
BQ29729DSER
BQ29729DSET
BQ29732DSER
BQ29732DSET
BQ29733DSER
BQ29733DSET
BQ29737DSER
BQ29737DSET
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
3000
250
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.75
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
Q2
Q2
Q2
Q2
Q2
Q2
Q2
Q2
Q2
Q2
Q2
Q2
Q2
Q2
Q2
Q2
3000
250
3000
250
3000
250
3000
250
3000
250
3000
250
3000
250
*All dimensions are nominal
Device
Package Type Package Drawing Pins
WSON DSE
SPQ
3000
Length (mm) Width (mm) Height (mm)
182.0 182.0 20.0
BQ29700DSER
6
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
12-Jun-2021
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
BQ29700DSET
BQ29701DSER
BQ29701DSET
BQ29702DSER
BQ29702DSET
BQ29703DSER
BQ29703DSET
BQ29704DSER
BQ29704DSET
BQ29705DSER
BQ29705DSET
BQ29706DSER
BQ29706DSET
BQ29707DSER
BQ29707DSET
BQ29716DSER
BQ29716DSET
BQ29717DSER
BQ29717DSET
BQ29718DSER
BQ29718DSET
BQ29723DSER
BQ29723DSET
BQ29728DSER
BQ29728DSET
BQ29729DSER
BQ29729DSET
BQ29732DSER
BQ29732DSET
BQ29733DSER
BQ29733DSET
BQ29737DSER
BQ29737DSET
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
WSON
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
DSE
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
250
3000
250
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
182.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
3000
250
3000
250
3000
250
3000
250
3000
250
3000
250
3000
250
3000
250
3000
250
3000
250
3000
250
3000
250
3000
250
3000
250
3000
250
Pack Materials-Page 3
PACKAGE OUTLINE
DSE0006A
WSON - 0.8 mm max height
SCALE 6.000
PLASTIC SMALL OUTLINE - NO LEAD
1.55
1.45
A
B
1.55
1.45
PIN 1 INDEX AREA
0.8 MAX
C
SEATING PLANE
0.08 C
(0.2) TYP
0.05
0.00
0.6
0.4
5X
3
4
2X 1
4X 0.5
6
1
0.3
6X
0.7
0.5
0.2
0.1
0.05
PIN 1 ID
C A B
C
4220552/A 04/2021
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
www.ti.com
EXAMPLE BOARD LAYOUT
DSE0006A
WSON - 0.8 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
PKG
(0.8)
5X (0.7)
1
6
6X (0.25)
SYMM
4X 0.5
4
3
(R0.05) TYP
(1.6)
LAND PATTERN EXAMPLE
SCALE:40X
0.05 MIN
ALL AROUND
0.05 MAX
ALL AROUND
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
METAL
SOLDER MASK
OPENING
PADS 4-6
NON SOLDER MASK
DEFINED
PADS 1-3
SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4220552/A 04/2021
NOTES: (continued)
3. For more information, see Texas Instruments literature number SLUA271 (www.ti.com/lit/slua271).
www.ti.com
EXAMPLE STENCIL DESIGN
DSE0006A
WSON - 0.8 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
PKG
5X (0.7)
(0.8)
6X (0.25)
1
6
SYMM
4X (0.5)
4
3
(R0.05) TYP
(1.6)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE:40X
NOTES: (continued)
4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
www.ti.com
重要声明和免责声明
TI“按原样”提供技术和可靠性数据(包括数据表)、设计资源(包括参考设计)、应用或其他设计建议、网络工具、安全信息和其他资源,
不保证没有瑕疵且不做出任何明示或暗示的担保,包括但不限于对适销性、某特定用途方面的适用性或不侵犯任何第三方知识产权的暗示担
保。
这些资源可供使用 TI 产品进行设计的熟练开发人员使用。您将自行承担以下全部责任:(1) 针对您的应用选择合适的 TI 产品,(2) 设计、验
证并测试您的应用,(3) 确保您的应用满足相应标准以及任何其他功能安全、信息安全、监管或其他要求。
这些资源如有变更,恕不另行通知。TI 授权您仅可将这些资源用于研发本资源所述的 TI 产品的应用。严禁对这些资源进行其他复制或展示。
您无权使用任何其他 TI 知识产权或任何第三方知识产权。您应全额赔偿因在这些资源的使用中对 TI 及其代表造成的任何索赔、损害、成
本、损失和债务,TI 对此概不负责。
TI 提供的产品受 TI 的销售条款或 ti.com 上其他适用条款/TI 产品随附的其他适用条款的约束。TI 提供这些资源并不会扩展或以其他方式更改
TI 针对 TI 产品发布的适用的担保或担保免责声明。
TI 反对并拒绝您可能提出的任何其他或不同的条款。IMPORTANT NOTICE
邮寄地址:Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2022,德州仪器 (TI) 公司
相关型号:
BQ29707
BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single-Cell Li-Ion and Li-Polymer Batteries
TI
BQ2970_V01
BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single-Cell Li-Ion and Li-Polymer Batteries
TI
BQ2970_V02
BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single-Cell Li-Ion and Li-Polymer Batteries
TI
BQ29716
BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single-Cell Li-Ion and Li-Polymer Batteries
TI
BQ29717
BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single-Cell Li-Ion and Li-Polymer Batteries
TI
©2020 ICPDF网 联系我们和版权申明