BQ25176MDSGR [TI]

适用于单节锂离子和磷酸铁锂电池且具有 VINDPM 的 800mA 线性电池充电器 | DSG | 8 | -40 to 125;


型号：	BQ25176MDSGR
厂家：	TEXAS INSTRUMENTS
描述：	适用于单节锂离子和磷酸铁锂电池且具有 VINDPM 的 800mA 线性电池充电器 \| DSG \| 8 \| -40 to 125 电池
文件：	总30页 (文件大小：2315K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BQ25176M

ZHCSQ82 –SEPTEMBER 2022

BQ25176M 适用于收集应用、具有电池跟踪VINDPM 的0.8A 单节电池线性太阳

能充电器

1 特性

3 说明

• 可承受高达30V 的输入电压

• 基于输入电压的动态电源管理(VINDPM) 跟踪电池

电压

BQ25176M 是一款集成式 800mA 线性太阳能充电

器，适用于单节锂离子、锂聚合物和磷酸铁锂电池，具

有持续充电模式和电池跟踪 VINDPM。该器件具有为

电池充电的单电源输出。当系统负载与电池并联时，充

电电流会由系统和电池共享。

• 自动睡眠模式，可降低功耗

– 350nA 电池漏电流

– 禁用充电时，输入漏电流为80µA

• 支持单节锂离子、锂聚合物和磷酸铁锂电池

• 操作可使用外部电阻器进行编程

– 用于设置电池稳压电压的VSET：

• 锂离子电池：4.05V、4.15V、4.2V、

4.35V、4.4V

• 磷酸铁锂电池：3.5V、3.6V、3.7V

– 用于设置10mA 至800mA 充电电流的ISET

• 高精度

该器件分四个阶段为锂离子/锂聚合物电池充电：涓流

充电阶段，用于使电池电压达到 V_{BAT_SHORT}；预充电

阶段，用于恢复完全放电的电池；恒流快速充电阶段，

用于使电池充上大部分电量；以及电压调节阶段，用于

使电池电量充满。

在所有充电阶段，内部控制环路都会监控 IC 结温，当

其超过内部温度阈值T_REG时，它会减少充电电流。

充电器功率级和充电电流感测功能均完全集成。该充电

器具有高精度电流和电压调节环路功能、充电状态显示

和自动充电终止功能。充电电压和快速充电电流可通过

外部电阻编程设定。预充电和终止电流阈值由快速充电

电流设置决定。

– 充电电压精度为±0.5%

– 充电电流精度为±10%

• 充电特性

– 预充电电流为20% ISET

– 终止电流为10% ISET

器件信息

– 用于太阳能充电的电池跟踪输入电压动态电源管

理(VINDPM)

器件型号⁽¹⁾

BQ25176M

封装尺寸（标称值）

封装

WSON (8)

2.0mm x 2.0mm

– 用于充电功能控制的BIAS 引脚

– 用于状态和故障指示的开漏输出

– 用于电源正常指示的开漏输出

• 集成故障保护

(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附

录。

V_IN: 3.0V œ 18V

OUT

1s Li-Ion, LiFePO4

V_REF

– 18.1V 输入过压保护

– 基于VSET 的输出过压保护

– 1000mA 过流保护

– 125°C 热调节；150°C 热关断保护

– OUT 短路保护

VSET

ISET

GND

STAT

/PG

BIAS

BQ25176M

– VSET、ISET 引脚短路/开路保护

简化原理图

2 应用

• 智能追踪器

• 低功耗手持设备

• 辅助太阳能充电器

本文档旨在为方便起见，提供有关TI 产品中文版本的信息，以确认产品的概要。有关适用的官方英文版本的最新信息，请访问

www.ti.com，其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前，请务必参考最新版本的英文版本。

English Data Sheet: SLUSEV4

BQ25176M

ZHCSQ82 –SEPTEMBER 2022

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Table of Contents

7.4 Device Functional Modes..........................................16

8 Application and Implementation..................................18

8.1 Application Information............................................. 18

8.2 Typical Applications.................................................. 18

9 Power Supply Recommendations................................22

10 Layout...........................................................................22

10.1 Layout Guidelines................................................... 22

10.2 Layout Example...................................................... 22

11 Device and Documentation Support..........................23

11.1 Device Support........................................................23

11.2 接收文档更新通知................................................... 23

11.3 支持资源..................................................................23

11.4 Trademarks............................................................. 23

11.5 Electrostatic Discharge Caution..............................23

11.6 术语表..................................................................... 23

12 Mechanical, Packaging, and Orderable

1 特性................................................................................... 1

2 应用................................................................................... 1

3 说明................................................................................... 1

4 Revision History.............................................................. 2

5 Pin Configuration and Functions...................................3

6 Specifications.................................................................. 4

6.1 Absolute Maximum Ratings........................................ 4

6.2 ESD Ratings............................................................... 4

6.3 Recommended Operating Conditions.........................4

6.4 Thermal Information....................................................5

6.5 Electrical Characteristics.............................................6

6.6 Timing Requirements..................................................8

6.7 Typical Characteristics................................................9

7 Detailed Description......................................................11

7.1 Overview................................................................... 11

7.2 Functional Block Diagram.........................................12

7.3 Feature Description...................................................13

Information.................................................................... 24

4 Revision History

注：以前版本的页码可能与当前版本的页码不同

DATE

REVISION

NOTES

September 2022

Initial Release

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5 Pin Configuration and Functions

ISET

BIAS

GND

OUT

VSET

/PG

BQ25176M

Thermal Pad

STAT

图5-1. DSG Package 8-Pin WSON Top View

表5-1. Pin Functions

I/O

DESCRIPTION

NAME

NUMBER

Input power, connected to external DC supply. Bypass IN with at least 1-μF capacitor to GND,

placed close to the IC.

ISET

BIAS

Programs the device fast-charge current. External resistor from ISET to GND defines fast charge

current value. Expected range is 30 kΩ (10 mA) to 375 Ω (800 mA). ICHG = K_ISET/ R_ISET

Precharge current is defined as 20% of ICHG. Termination current is defined as 10% of ICHG.

Bias sense pin. Connect an external 10-kΩresistor from this pin to GND. This pin can also be used

as a charging disable pin by pulling the pin to GND by means of an external NMOS. Refer to the

applications section for more information.

GND

STAT

Ground pin

–

Open drain charger status indication output. Connect to pull-up rail via 10-kΩresistor.

LOW indicates charge in progress. HIGH indicates charge complete or charge disabled. When a

fault condition is detected STAT pin blinks at 1 Hz.

Open drain charge power good indication output. Connect to pull-up rail via 10-kΩresistor.

PG pulls low when V_IN> V_{IN_LOWV}and VOUT + V_SLEEPZ< V_IN< V_{IN_OV}

VSET

Programs the regulation voltage for OUT pin with a pull-down resistor. Valid resistor range is 18.2

kΩto 100 kΩ, values outside this range will suspend charge. Refer to 节7.3.1.2 for voltage level

details. Recommend using ±1% tolerance resistor with <200 ppm/ºC temperature coefficient.

OUT

Battery connection. System Load may be connected in parallel to battery. Bypass OUT with at least

1-μF capacitor to GND, placed close to the IC.

Thermal Pad

Exposed pad beneath the IC for heat dissipation. Solder thermal pad to the board with vias

connecting to solid GND plane.

—

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

MIN

–0.3

MAX

UNIT

Voltage

OUT

Voltage

ISET, PG, STAT, BIAS, VSET

5.5

Output Sink Current

Junction temperature

Storage temperature

PG, STAT

T_J

°C

150

–40

–65

T_stg

(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute maximum ratings do not imply

functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If

briefly operating outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not

sustain damage, but it may not be fully functional. Operating the device in this manner may affect device reliability, functionality,

performance, and shorten the device lifetime.

6.2 ESD Ratings

VALUE

UNIT

Human body model (HBM), per ANSI/ESDA/

JEDEC JS-001⁽¹⁾

±2500

V_(ESD)

Electrostatic discharge

Charged device model (CDM), per ANSI/ESDA/

JEDEC JS-002⁽²⁾

±1500

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

V_IN

Input voltage

3.0

V_OUT

Output voltage

4.4

I_OUT

Output current

0.8

T_J

Junction temperature

IN capacitor

125

°C

–40

C_IN

µF

C_OUT

OUT capacitor

µF

R_VSET

R_{VSET_TOL}

R_{VSET_TEMPCO}

R_ISET

R_BIAS

VSET resistor

18.2

-1

100

kΩ

Tolerance for VSET resistor

Temperature coefficient for VSET resistor

ISET resistor

200

ppm/℃

kΩ

0.375

BIAS resistor

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6.4 Thermal Information

BQ25176M

DSG

THERMAL METRIC⁽¹⁾

UNIT

8 PINS

75.2

R_θJA

Junction-to-ambient thermal resistance (JEDEC⁽¹⁾

Junction-to-case (top) thermal resistance

Junction-to-board thermal resistance

)

°C/W

R_θJC(top)

R_θJB

93.4

41.8

Junction-to-top characterization parameter

Junction-to-board characterization parameter

Junction-to-case (bottom) thermal resistance

3.8

Ψ_JT

41.7

Ψ_JB

R_θJC(bot)

17.0

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

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6.5 Electrical Characteristics

3.0V < V_IN< and V_IN> V_OUT+ V_SLEEP, T_J= -40°C to +125°C, and T_J= 25°C for typical values (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX UNIT

QUIESCENT CURRENTS

OUT= 4.2V, IN floating or IN = 0V - 5V,

Charge Disabled, T_J= 25 °C

0.35

0.6 µA

0.8 µA

110 µA

µA

I_{Q_OUT}

Quiescent output current (OUT)

OUT= 4.2V, IN floating or IN = 0V - 5V,

Charge Disabled, T_J< 105 °C

Shutdown input current (IN) with

charge disabled via BIAS pin

IN = 5V, Charge Disabled (V_BIAS

V_{BIAS_ENZ}), no battery

I_{SD_IN_BIAS}

I_{STANDBY_IN}

I_{Q_IN}

Standby input current (IN) with charge

terminated

IN = 5V, Charge Enabled, charge terminated

190

0.45

IN = 5V, OUT = 3.8V, Charge Enabled,

ICHG = 0A

Quiescent input current (IN)

0.6 mA

INPUT

V_{IN_OP}

IN operating range

3.0

3.05

2.80

3.15

3.10

V_{IN_LOWV}

V_SLEEPZ

V_SLEEP

V_{IN_OV}

IN voltage to start charging

IN voltage to stop charging

Exit SLEEP mode threshold

Enter SLEEP mode threshold

VIN overvoltage rising threshold

VIN overvoltage falling threshold

IN rising

3.09

2.95

IN falling

IN rising, V_IN- V_OUT, OUT = 4V

IN falling, V_IN- V_OUT, OUT = 4V

IN rising

80 mV

50 mV

18.1

18.4

18.2

18.7

V_{IN_OVZ}

IN falling

VOUT = 2.9V, VSET = 4.35V, measured at

IN pin

V_{IN_DPM_MIN}

Minimum input voltage DPM threshold

3.15

3.57

3.25

3.35

3.7

Input voltage DPM threshold tracking VOUT = 3.5V, VSET = 4.35V, measured at

V_{IN_DPM_BATTRK}

3.645

VOUT

IN pin

CONFIGURATION PINS SHORT/OPEN PROTECTION

Highest resistor value considered

short

R_ISETbelow this at startup, charger does not

initiate charge, power cycle toggle to reset

R_{ISET_SHORT}

350

2.8

R_VSETbelow this at startup, charger does

not initiate charge, power cycle or TS toggle

to reset

Highest resistor value considered

short

R_{VSET_SHORT}

kΩ

R_VSETbelow this at startup, charger does

R_{VSET_OPEN}

Lowest resistor value considered open not initiate charge, power cycle or TS toggle

to reset

200

425

kΩ

BATTERY CHARGER

V_DO

Dropout voltage (V_IN- V_OUT

)

VIN falling, VOUT = 4.35V, IOUT = 500mA

Tj = 25℃, all VSET settings

0.5

0.8

–0.5

–0.8

OUT charge voltage regulation

accuracy

V_{REG_ACC}

Tj = -40℃to 125℃, all VSET settings

Typical charge current regulation

range

I_{CHG_RANGE}

K_ISET

V_OUT> V_{BAT_LOWV}

800 mA

330

Charge current setting factor, I_CHG

K_ISET/ R_ISET

10mA < ICHG < 800mA

270

300

AΩ

720

450

800

500

100

880 mA

550 mA

110 mA

11 mA

R_ISET= 375Ω, OUT = 3.8V

R_ISET= 600Ω, OUT = 3.8V

R_ISET= 3.0kΩ, OUT = 3.8V

R_ISET= 30kΩ, OUT = 3.8V

I_{CHG_ACC}

Charge current accuracy

Typical pre-charge current, as

percentage of ICHG

I_PRECHG

V_OUT< V_{BAT_LOWV}

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6.5 Electrical Characteristics (continued)

3.0V < V_IN< and V_IN> V_OUT+ V_SLEEP, T_J= -40°C to +125°C, and T_J= 25°C for typical values (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

144

TYP

160

100

MAX UNIT

176 mA

110 mA

22 mA

R_ISET= 375Ω, OUT = 2.5V

R_ISET= 600Ω, OUT = 2.5V

R_ISET= 3.0kΩ, OUT = 2.5V

R_ISET= 30kΩ, OUT = 2.5V

I_{PRECHG_ACC}

Precharge current accuracy

1.4

2.6 mA

Typical termination current, as

percentage of ICHG

I_TERM

V_OUT= V_REG

8.5

0.4

55 mA

11.5 mA

1.6 mA

R_ISET= 600Ω, OUT = VREG = 4.2V

R_ISET= 3.0kΩ, OUT = VREG = 4.2V

R_ISET=30kΩ, OUT = VREG = 4.2V

I_{TERM_ACC}

Termination current accuracy

Output (OUT) short circuit voltage

rising threshold, for Li-Ion chemistry

V_{BAT_SHORT}

OUT rising, VSET configured for Li-Ion

OUT rising, VSET configured for LiFePO₄

2.1

1.1

2.2

1.2

2.3

1.3

Output (OUT) short circuit voltage

rising threshold, for LiFePO₄

chemistry

V_{BAT_SHORT}

Output (OUT) short circuit voltage

hysteresis

V_{BAT_SHORT_HYS}

I_{BAT_SHORT}

OUT falling

200

OUT short circuit charging current

V_OUT< V_{BAT_SHORT}

20 mA

Pre-charge to fast-charge transition

threshold, for Li-Ion chemistry

V_{BAT_LOWV}

OUT rising, VSET configured for Li-Ion

2.7

2.8

3.0

2.1

Pre-charge to fast-charge transition

threshold for Li-FePO₄chemistry

V_{BAT_LOWV}

V_{BAT_LOWV_HYS}

V_RECHG

OUT rising, VSET configured for LiFePO₄

OUT falling

1.9

2.0

100

Battery LOWV hysteresis

Battery recharge threshold for Li-Ion

chemistry

OUT falling, VSET configured for Li-

IonV_{REG_ACC}- V_OUT

125 mV

225 mV

Battery recharge threshold for

LiFePO₄chemistry

OUT falling, VSET configured for LiFePO₄,

V_{REG_ACC}- V_OUT

V_RECHG

175

200

IOUT = 400mA, T_J= 25°C

845

1000

1450

mΩ

R_ON

Charging path FET on-resistance

IOUT = 400mA, T_J= -40 - 125°C

BATTERY CHARGER PROTECTION

V_{OUT_OVP}

I_{OUT_OCP}

OUT overvoltage rising threshold

VOUT rising, as percentage of VREG

VOUT falling, as percentage of VREG

IOUT rising

103

101

0.9

104

102

105

103

1.1

OUT overvoltage falling threshold

Output current limit threshold

TEMPERATURE REGULATION AND TEMPERATURE SHUTDOWN

Typical junction temperature

regulation

T_REG

125

°C

Thermal shutdown rising threshold

Thermal shutdown falling threshold

Temperature increasing

150

135

°C

T_SHUT

Temperature decreasing

BIAS PIN

I_BIAS

BIAS pin current

36.5

39.5 µA

60 mV

Charge Disable threshold. Crossing

this threshold shall shutdown IC

V_{BIAS_ENZ}

BIAS pin voltage falling

Charge Enable threshold. Crossing

this threshold shall restart IC operation

V_{BIAS_EN}

BIAS pin voltage rising

85 mV

V_{BIAS_CLAMP}

BIAS maximum voltage clamp

BIAS pin open-circuit (float)

2.3

2.6

2.9

0.4

LOGIC OUTPUT PIN (STAT, PG)

V_OL

Output low threshold level

Sink current = 5mA

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6.5 Electrical Characteristics (continued)

3.0V < V_IN< and V_IN> V_OUT+ V_SLEEP, T_J= -40°C to +125°C, and T_J= 25°C for typical values (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX UNIT

I_{OUT_BIAS}

High-level leakage current

Pull up rail 3.3V

µA

6.6 Timing Requirements

MIN

NOM

MAX

UNIT

BATTERY CHARGER

t_{BIAS_DUTY_OFF}

t_{OUT_OCP_DGL}

BIAS turn-off time during BIAS duty cycle mode

Deglitch time for I_{OUT_OCP}, IOUT rising

100

µs

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6.7 Typical Characteristics

C_IN= 1 µF, C_OUT= 1 µF, V_IN= 5 V, V_OUT= 3.8 V (unless otherwise specified)

0.8

0.6

0.4

0.2

0.8

0.6

0.4

0.2

-40°C

0°C

25°C

85°C

105°C

-40°C

0°C

25°C

85°C

105°C

-0.2

-0.4

-0.6

-0.8

-1

-0.2

-0.4

-0.6

-0.8

-1

90 100

4.5 4.7 4.9 5.1 5.3 5.5 5.7 5.9 6.1 6.3 6.5

VIN (V)

IOUT (mA)

V_IN= 5 V

V_OUT= 4.2 V

I_OUT= 10 mA

V_OUT= 4.2 V

图6-2. Load Regulation

图6-1. Line Regulation

10mA

50mA

100mA

200mA

400mA

600mA

800mA

-2

-4

-6

-8

-10

-2

-4

-6

-8

-10

10mA

50mA

100mA

200mA

300mA

400mA

3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9

VOUT (V)

4.1

-40

-20

100

Temperature (°C)

V_IN= 5 V

Temp = 25ºC

V_IN= 5 V

V_OUT= 3.8 V

图6-3. ICHG Accuracy vs V_OUT

图6-4. ICHG Accuracy vs Temperature

0.8

0.6

0.4

0.2

3.6V VREG

4.35V VREG

-0.2

-0.4

-0.6

-0.8

-1

-40

-20

100

Temperature (°C)

图6-6. Dropout Voltage vs Output Current

I_OUT= 10 mA

图6-5. VSET Accuracy vs Temperature

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6.7 Typical Characteristics (continued)

C_IN= 1 µF, C_OUT= 1 µF, V_IN= 5 V, V_OUT= 3.8 V (unless otherwise specified)

175

150

125

100

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

-40°C

0°C

25°C

85°C

105°C

-40°C

0°C

25°C

85°C

105°C

4.5

5.5

VIN (V)

6.5

VIN (V)

BIAS Pin = LOW

V_OUT= 0 V

ICHG = 0 A

图6-7. Input Shutdown Current vs Input Voltage

图6-8. Input Quiescent Current vs Input Voltage

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

-40°C

0°C

25°C

85°C

105°C

VOUT (V)

V_IN= 0 V

V_OUT= 4.35 V

图6-9. Output Quiescent Current vs Output Voltage

图6-10. Termination Current Accuracy vs Termination Current

Setting

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7 Detailed Description

7.1 Overview

The BQ25176M is an integrated 800-mA linear solar charger for 1-cell Li-Ion, Li-Polymer, and LiFePO₄batteries.

The device has a single power output that charges the battery. The system load can be placed in parallel with

the battery. When the system load is placed in parallel with the battery, the output current is shared between the

system and the battery.

The device has four phases for charging a Li-Ion/Li-Poly battery: trickle charge to bring the battery voltage up to

V_{BAT_SHORT}, precharge to recover a fully discharged battery, fast-charge constant current to supply the bulk of

the charge, and voltage regulation to reach full capacity.

The charger includes flexibility in programming of the fast-charge current and regulation voltage. This charger is

designed to work with a standard USB connection or dedicated charging adapter (DC output).

The charger also comes with a full set of safety features: overvoltage protection, and configuration pin (VSET,

ISET) short and open protection. All of these features and more are described in detail below.

The charger is designed for a single path from the input to the output to charge the battery. Upon application of a

valid input power source, the configuration pins are checked for short/open circuit.

If the battery voltage is below the V_{BAT_LOWV}threshold, the battery is considered discharged and a

preconditioning cycle begins. If the battery voltage is below V_{BAT_SHORT}, the charge current is I_{BAT_SHORT}. If the

battery voltage is higher than V_{BAT_SHORT}but lower than V_{BAT_LOWV}, the amount of precharge current is 20% of

the programmed fast-charge current via the ISET pin.

Once the battery has charged to the V_{BAT_LOWV}threshold, Fast Charge Mode is initiated. The fast charge

constant current is programmed using the ISET pin. The constant current phase provides the bulk of the charge.

Power dissipation in the IC is greatest in fast charge with a lower battery voltage. If the IC temperature reaches

_REG, the IC enters thermal regulation. 图 7-1 shows the typical lithium battery charging profile with thermal

regulation. Under normal operating conditions, the IC junction temperature is less than T_REGand thermal

regulation is not entered.

Once the battery has charged to the regulation voltage, the voltage loop takes control and holds the battery at

the regulation voltage until the current tapers to the termination threshold. The termination threshold is 10% of

the programmed fast-charge current.

Further details are described in 节7.3.

Thermal

Regulation

Phase

Current

Regulation

Phase

Voltage Regulation and

Charge Termination

Phase

Pre-

Conditioning

Phase

DONE

REG

CHG

Battery Current,

FAST-CHARGE

CURRENT

OUT

Battery

Voltage,

OUT

Charge

Complete

Status,

Charger

Off

PRE-CHARGE

CURRENT AND

TERMINATION

THRESHOLD

BAT_LOWV

TERM

PRECHG

REG

Temperature, Tj

图7-1. Lithium-Ion Battery Charging Profile with Thermal Regulation

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7.2 Functional Block Diagram

OUT

V_BAT

I_CHG

V_IN

V_REF

V_{IN_OV}

V_SLEEPZ

V_{IN_UVLOZ}

I_{CHG_REF}

V_{BAT_REF}

INPUT

MONITOR

QBLK

CNTRL

T_REG

T_J

/PG

CEN

FAULT

ISET

STAT

/PG

I_{CHG_REF}

V_{BAT_REF}

PIN DETECT

REF DAC

STAT

/PG

VSET

T_REG

I_TERM

T_J

TERM

TSHUT

I_CHG

T_SHUT

(V_{BAT_REF}

- V_RECHG)

V_{BIAS_CLAMP}

RECHG

V_BAT

I_BIAS

BIAS

GND

V_BIAS

CHARGE

CONTROL

V_{BAT_LOWV}

V_BAT

VOUT_OVP

IOUT_OCP

BATLOW

V_BAT

V_{BAT_SHORT}

V_{OUT_OVP}

VBAT_SHORT

I_CHG

V_BAT

I_{OUT_OCP}

V_{IN_DPM}

VINDPM

V_IN

STATE

MONITOR

BQ25176M

FAULT

STAT

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7.3 Feature Description

7.3.1 Device Power Up from Input Source

When an input source is plugged in and charge is enabled, the device checks the input source voltage to turn on

all the bias circuits. It detects and sets the charge current and charge voltage limits before the linear regulator is

started. The power up sequence from input source is as listed:

1. ISET pin detection

2. VSET pin detection to select charge voltage

3. Charger power up

7.3.1.1 ISET Pin Detection

After a valid VIN is plugged in, the device checks the resistor on the ISET pin for a short circuit (R_ISET

R_{ISET_SHORT}). If a short condition is detected, the charger remains in the FAULT state until the input or BIAS pin

is toggled. If the ISET pin is open-circuit, the charger proceeds through pin detection and starts the charger with

no charge current. This pin is monitored while charging and changes in R_ISETwhile the charger is operating will

immediately translate to changes in charge current.

An external pulldown resistor (±1% or better is recommended to minimize charge current error) from the ISET

pin to GND sets the charge current as:

K_ISET

I_CHG

R_ISET

(1)

where:

• I_CHGis the desired fast-charge current

• K_ISETis a gain factor found in the electrical specifications

• R_ISETis the pulldown resistor from the ISET pin to GND

For charge currents below 50 mA, an extra RC circuit is recommended on ISET to achieve a more stable current

signal. For greater accuracy at lower currents, part of the current-sensing FET is disabled to give better

resolution.

7.3.1.2 VSET Pin Detection

VSET pin is used to program the device regulation voltage at end-of-charge using a ±1% pulldown resistor. The

available pulldown resistor and corresponding charging levels are:

表7-1. VSET Pin Resistor Value Table

RESISTOR

> 150 kΩ

100kΩ

CHARGE VOLTAGE (V)

No Charge (open-circuit)

1-cell LiFePO₄: 3.50 V

1-cell LiFePO₄: 3.60 V

1-cell LiFePO₄: 3.70 V

1-cell LiIon: 4.05 V

82.5kΩ

61.9kΩ

47.5kΩ

35.7kΩ

27.4kΩ

24.3kΩ

18.2kΩ

< 3.0 kΩ

1-cell LiIon: 4.15 V

1-cell LiIon: 4.20 V

1-cell LiIon: 4.35 V

1-cell LiIon: 4.40 V

No Charge (short-circuit)

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If either a short- or open-circuit condition is detected, charger stops operation and remains in the FAULT state

until the input or BIAS pin is toggled.

Once a valid resistor value has been detected, the corresponding charge voltage is latched in and the pin is not

continuously monitored during operation. A change in this pin will not be acknowledged by the IC until the input

supply or BIAS pin is toggled.

7.3.1.3 Charger Power Up

After VSET, ISET pin resistor values have been validated, the device proceeds to enable the charger. The

device automatically begins operation at the correct stage of battery charging depending on the OUT voltage.

7.3.2 Battery Charging Features

When charge is enabled, the device automatically completes a charging cycle according to the setting on the

ISET pin without any intervention. The lithium-based charging cycle is automatically terminated when the

charging current is below termination threshold, charge voltage is above recharge threshold, and device is not in

VINDPM or in thermal regulation (TREG). When a full battery is discharged below the recharge threshold

(V_RECHG), the device automatically starts a new charging cycle. After charge is done, toggling the input supply or

the BIAS pin can initiate a new charging cycle.

7.3.2.1 Lithium-Ion Battery Charging Profile

The device charges a lithium based battery in four phases: trickle charge, precharge, constant current, and

constant voltage. At the beginning of a charging cycle, the device checks the battery voltage and regulates

current and voltage accordingly.

If the charger is in thermal regulation during charging, the actual charging current is less than the programmed

value. In this case, termination is temporarily disabled.

Regulation Voltage

VSET

V_RECHG

Battery Voltage

Charge Current

ISET

Charge Current

V_{BAT_LOWV}

V_{BAT_SHORT}

IPRECHG = ISET x 20%

ITERM = ISET x 10%

I_{BAT_SHORT}

Trickle Charge

Pre-charge

Re-

charge

Fast-Charge

Taper-Charge

Charge

Done

图7-2. Battery Charging Profile

7.3.2.2 Input Voltage Based Dynamic Power Management (VINDPM)

The VINDPM feature is used to detect an input source voltage that is reaching its current limit due to excessive

load and causing the voltage to reduce. When the input voltage drops to the VINDPM threshold (V_{IN_DPM}), the

internal pass FET reduces the current until there is no further drop in voltage at the input. This prevents a source

with voltage less than the V_{IN_DPM}to power the OUT pin. This unique feature makes the IC work well with

current limited (for example, high impedance) power sources, such as solar panels or inductive charging pads.

This is also an added safety feature that helps protect the source from excessive loads.

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The BQ25176M solar charger features the battery tracking VINDPM. V_{IN_DPM}tracks the battery voltage (OUT pin

voltage), which is typically V_OUT+145mV. The minimum V_{IN_DPM}is 3.25V. It enables charging from the solar

panel when the battery voltage is low and maintains the charging as the battery voltage increases even when

the charge current is low.

7.3.2.3 Charge Termination and Battery Recharge

The device terminates a charge cycle when the OUT pin voltage is above the recharge threshold (V_RECHG) and

the current is below the termination threshold (I_TERM). Termination is temporarily disabled when the charger

device is in thermal regulation or VINDPM. After charge termination is detected, the linear regulator turns off and

the device enters the Standby state. Once the OUT pin drops below the V_RECHGthreshold, a new charge cycle is

automatically initiated.

7.3.3 Status Outputs ( PG, STAT)

7.3.3.1 Power Good Indicator (PG Pin)

This open-drain pin pulls LOW to indicate a good input source when:

1. VIN above V_{IN_LOWV}

2. VIN above V_OUT+ V_SLEEPZ(not in SLEEP)

3. VIN below V_{IN_OV}

7.3.3.2 Charging Status Indicator (STAT)

The device indicates the charging state on the open-drain STAT pin. This pin can drive an LED.

表7-2. STAT Pin State

CHARGING STATE

STAT PIN STATE

HIGH

Charge completed, charger in Sleep mode or charge disabled (V_BIAS

< V_{BIAS_ENZ}

)

Charge in progress (including automatic recharge)

LOW

Fault (VIN_OV, VOUT_OVP, IOUT_OCP, TSHUT, VSET pin short/

open, or ISET pin short)

BLINK at 1Hz

7.3.4 Protection Features

The device closely monitors input and output voltages, as well as internal FET current and temperature for safe

linear regulator operation.

7.3.4.1 Input Overvoltage Protection (VIN_OV)

If the voltage at the IN pin exceeds V_{IN_OV}, the device turns off after a deglitch, t_{VIN_OV_DGL}. The device enters

Standby mode. Once the IN voltage recovers to a normal level, the charge cycle automatically resumes

operation.

7.3.4.2 Output Overvoltage Protection (VOUT_OVP)

If the voltage at the OUT pin exceeds V_{OUT_OVP}, the device immediately stops charging.The device enters

Standby mode. Once the OUT voltage recovers to a normal level, the charge cycle automatically resumes

operation.

7.3.4.3 Output Overcurrent Protection (IOUT_OCP)

During normal operation, the OUT current should be regulated to the ISET programmed value. However, if a

short circuit occurs on the ISET pin, the OUT current may rise to an unintended level. If the current at the OUT

pin exceeds I_{OUT_OCP}, the device turns off after a deglitch, t_{OUT_OCP_DGL}. An input supply or BIAS pin toggle is

required to restart operation.

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I_{OUT_OCP}

ICHG

t_{OUT_OCP_DGL}

R_ISET

Short Circuit

event on ISET

Charger

latched off

图7-3. Overcurrent Protection

7.3.4.4 Thermal Regulation and Thermal Shutdown (TREG and TSHUT)

The device monitors its internal junction temperature (T_J) to avoid overheating and to limit the IC surface

temperature. When the internal junction temperature exceeds the thermal regulation limit, the device

automatically reduces the charge current to maintain the junction temperature at the thermal regulation limit

(TREG). During thermal regulation, the actual charging current is usually below the programmed value on the

ISET pin.

Therefore, the termination comparator for the Lithium-Ion battery is disabled.

Additionally, the device has thermal shutdown to turn off the linear regulator when the IC junction temperature

exceeds the TSHUT threshold. The charger resumes operation when the IC die temperature decreases below

the TSHUT falling threshold.

7.4 Device Functional Modes

7.4.1 Shutdown or Undervoltage Lockout (UVLO)

The device is in the shutdown state if the IN pin voltage is less than V_{IN_LOWV}or the BIAS pin is below V_{BIAS_ENZ}

The internal circuitry is powered down, all the pins are high impedance, and the device draws I_{SD_IN_BIAS}from

the input supply. Once the IN voltage rises above the V_{IN_LOW}threshold and the BIAS pin is above V_{BIAS_EN}, the

IC enters Sleep mode or Active mode depending on the OUT pin voltage.

7.4.2 Sleep Mode

The device is in Sleep mode when V_{IN_LOWV}< V_IN< V_OUT+ V_SLEEPZ. The device waits for the input voltage to

rise above V_OUT+ V_SLEEPZto start operation.

7.4.3 Active Mode

The device is powered up and charges the battery when the BIAS pin is above V_{BIAS_ENZ}and the IN voltage

ramps above both V_{IN_LOWV}and V_OUT+ V_SLEEPZ. The device draws I_{Q_IN}from the supply to bias the internal

circuitry. For details on the device power-up sequence, refer to 节7.3.1.

7.4.3.1 Standby Mode

The device is in Standby mode if a valid input supply is present and charge is terminated or if a recoverable fault

is detected. The internal circuitry is partially biased, and the device continues to monitor for either VOUT to drop

below V_RECHGor the recoverable fault to be removed.

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7.4.4 Fault Mode

The fault conditions are categorized into recoverable and nonrecoverable as follows:

• Recoverable, from which the device should automatically recover once the fault condition is removed:

– VIN_OV

– VOUT_OVP

– TSHUT

• Nonrecoverable, requiring BIAS pin or input supply toggle to resume operation:

– IOUT_OCP

– ISET pin short detected

– VSET pin short/open detected

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8 Application and Implementation

备注

Information in the following applications sections is not part of the TI component specification, and TI

does not warrant its accuracy or completeness. TI’s customers are responsible for determining

suitability of components for their purposes, as well as validating and testing their design

implementation to confirm system functionality.

8.1 Application Information

A typical application consists of the device configured as a standalone battery charger for single-cell Lithium-Ion,

Li-Polymer, or LiFePO₄chemistries. The charge voltage is configured using a pull-down resistor on the VSET

pin. The charge current is configured using a pull-down resistor on the ISET pin. Pulling the BIAS pin below

V_{BIAS_ENZ}disables the charging function. The charger and input supply status is reported via the STAT and PG

pins.

8.2 Typical Applications

8.2.1 Li-Ion Charger Design Example

1s Li-Ion

4.35V

V_IN: 3.0V ~ 18V

OUT

1µF

10kΩ

24.3kꢀ

VSET

ISET

GND

STAT

/PG

10kΩ

604Ω

10kΩ

BIAS

BQ25176M

图8-1. BQ25176M Typical Application for Li-Ion Charging at 500 mA

8.2.1.1 Design Requirements

• Supply voltage = 5 V

• Battery is single-cell Li-Ion

• Fast charge current: I_CHG= 500 mA

• Charge voltage: V_REG= 4.35 V

• Termination current: I_TERM= 10% of I_CHGor 50 mA

• Precharge current: I_PRECHG= 20% of I_CHGor 100 mA

• BIAS pin can be pulled down to disable charging

8.2.1.2 Detailed Design Procedure

The regulation voltage is set via the VSET pin to 4.35 V, the input voltage is 5 V and the charge current is

programmed via the ISET pin to 500 mA.

R_ISET= [K_ISET/ I_CHG

]

from electrical characteristics table. . . K_ISET= 300 AΩ

R_ISET= [300 AΩ/0.5 A] = 600 Ω

Selecting the closest 1% resistor standard value, use a 604-Ω resistor between ISET and GND, for an expected

I_CHG497 mA.

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8.2.1.3 Application Curves

C_IN= 1 µF, C_OUT= 1 µF, V_IN= 5 V, V_OUT= 3.8 V, I_CHG= 600 mA (unless otherwise specified)

OUT = open-circuit

R_ISET= 500 Ω

图8-2. Power Up With Battery

图8-3. Power Up Without Battery

BIAS pin pulled LOW

VIN = 5 V →0 V

图8-5. Charge Disable

图8-4. Power Down

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BIAS pin pull-low released

V_OUT= V_SET= 4.2 V

R_ISET= 0.5 kΩ I_SYS= 0 mA →250 mA

图8-6. Charge Enable

图8-7. OUT Transient Response

R_ISET= 0.5 kΩ V_OUT= 4.0 V →0 V

R_ISET= 500 Ω→0 Ω

图8-8. OUT Short-Circuit Response

图8-9. ISET Short-Circuit Response

V_SET= 4.2V Input source I_limit= 25 mA

R_ISET= 1.5

V_SET= 3.6V

Input source I_limit= 25 mA

R_ISET= 1.5 kΩ

kΩ

图8-10. Battary tracking VINDPM (Li-Ion)

图8-11. Battary tracking VINDPM (LiFePO₄)

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8.2.2 LiFePO₄Charger Design Example

1s LiFePO₄

3.6V

V_IN: 3.0V ~ 18V

OUT

System

Load

1µF

10kΩ

82.5kꢀ

VSET

ISET

GND

STAT

/PG

10kΩ

3.01kΩ

10kꢀ

BIAS

BQ25176M

图8-12. BQ25176M Typical Application for LiFePO₄Charging at 100 mA

8.2.2.1 Design Requirements

The design requirements include the following:

• Input supply = 5 V

• Battery is 1-cell LiFePO₄

• Fast charge current: I_CHG= 100 mA

• Charge voltage: V_REG= 3.6 V

• Termination current: I_TERM= 10% of I_CHGor 10 mA

• Precharge current: I_PRECHG= 20% of I_CHGor 20 mA

• BIAS pin can be pulled down to disable charging

8.2.2.2 Detailed Design Procedure

The regulation voltage is set via the VSET pin to 3.6 V, the input voltage is 5 V and the charge current is

programmed via the ISET pin to 100 mA.

R_ISET= [K_ISET/ I_CHG

]

from electrical characteristics table. . . K_ISET= 300 AΩ

R_ISET= [300 AΩ/0.1 A] = 3 kΩ

Selecting the closest 1% resistor standard value, use a 3.01-kΩ resistor between ISET and GND, for an

expected I_CHG99.67 mA.

8.2.2.3 Application Curves

For application curves, see 节8.2.1.3.

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9 Power Supply Recommendations

The device is designed to operate from an input voltage supply range between 3.0 V and 18 V (up to 30 V

tolerant) and current capability of at least the maximum designed charge current. If located more than a few

inches from the IN and GND pins, a larger capacitor is recommended.

10 Layout

10.1 Layout Guidelines

To obtain optimal performance, the decoupling capacitor from the IN pin to the GND pin and the output filter

capacitor from the OUT pin to the GND pin should be placed as close as possible to the device, with short trace

runs to both IN, OUT, and GND.

• All low-current GND connections should be kept separate from the high-current charge or discharge paths

from the battery. Use a single-point ground technique incorporating both the small signal ground path and the

power ground path.

• The high current charge paths into the IN pin and from the OUT pin must be sized appropriately for the

maximum charge current in order to avoid voltage drops in these traces.

To achieve correct pin detection, the ISET pin and VSET pin resistors should be placed as close as possible to

the device, with short trace runs to both ISET, VSET, and GND.

10.2 Layout Example

GND

OUT

VREF

OUT

VSET

/PG

0402

/PG

0402

STAT

ISET

BIAS

GND

0402

VSET

GND

STAT

0402

图10-1. Board Layout Example

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11 Device and Documentation Support

11.1 Device Support

11.1.1 第三方产品免责声明

TI 发布的与第三方产品或服务有关的信息，不能构成与此类产品或服务或保修的适用性有关的认可，不能构成此

类产品或服务单独或与任何TI 产品或服务一起的表示或认可。

11.2 接收文档更新通知

要接收文档更新通知，请导航至 ti.com 上的器件产品文件夹。点击订阅更新进行注册，即可每周接收产品信息更

改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。

11.3 支持资源

TI E2E^™支持论坛是工程师的重要参考资料，可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解

答或提出自己的问题可获得所需的快速设计帮助。

链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范，并且不一定反映 TI 的观点；请参阅

TI 的《使用条款》。

11.4 Trademarks

TI E2E^™is a trademark of Texas Instruments.

所有商标均为其各自所有者的财产。

11.5 Electrostatic Discharge Caution

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled

with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may

be more susceptible to damage because very small parametric changes could cause the device not to meet its published

specifications.

11.6 术语表

TI 术语表

本术语表列出并解释了术语、首字母缩略词和定义。

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12 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most

current data available for the designated devices. This data is subject to change without notice and revision of

this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

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PACKAGE OPTION ADDENDUM

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12-Apr-2023

PACKAGING INFORMATION

Orderable Device

Status Package Type Package Pins Package

Eco Plan

Lead finish/

Ball material

MSL Peak Temp

Op Temp (°C)

Device Marking

Samples

Drawing

Qty

(1)

(2)

(3)

(4/5)

(6)

BQ25176MDSGR

ACTIVE

WSON

DSG

3000 RoHS & Green

NIPDAU

Level-1-260C-UNLIM

-40 to 125

176M

Samples

⁽¹⁾The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

⁽²⁾RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance

do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may

reference these types of products as "Pb-Free".

RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.

Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based

flame retardants must also meet the <=1000ppm threshold requirement.

⁽³⁾MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

⁽⁴⁾There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

⁽⁵⁾Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

(6)

Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two

lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 1

GENERIC PACKAGE VIEW

DSG 8

2 x 2, 0.5 mm pitch

WSON - 0.8 mm max height

PLASTIC SMALL OUTLINE - NO LEAD

This image is a representation of the package family, actual package may vary.

Refer to the product data sheet for package details.

4224783/A

www.ti.com

PACKAGE OUTLINE

DSG0008A

WSON - 0.8 mm max height

SCALE 5.500

PLASTIC SMALL OUTLINE - NO LEAD

2.1

1.9

0.32

0.18

PIN 1 INDEX AREA

2.1

1.9

0.4

0.2

ALTERNATIVE TERMINAL SHAPE

TYPICAL

0.8

0.7

SEATING PLANE

0.05

0.00

SIDE WALL

0.08 C

METAL THICKNESS

DIM A

OPTION 1

0.1

OPTION 2

0.2

EXPOSED

THERMAL PAD

(DIM A) TYP

0.9 0.1

6X 0.5

1.5

1.6 0.1

0.32

0.18

PIN 1 ID

(45 X 0.25)

0.4

0.2

0.1

C A B

0.05

4218900/E 08/2022

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.

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EXAMPLE BOARD LAYOUT

DSG0008A

WSON - 0.8 mm max height

PLASTIC SMALL OUTLINE - NO LEAD

(0.9)

(

0.2) VIA

8X (0.5)

TYP

8X (0.25)

(0.55)

SYMM

(1.6)

6X (0.5)

SYMM

(1.9)

(R0.05) TYP

LAND PATTERN EXAMPLE

SCALE:20X

0.07 MIN

ALL AROUND

0.07 MAX

ALL AROUND

SOLDER MASK

OPENING

METAL

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

NON SOLDER MASK

DEFINED

SOLDER MASK

DEFINED

(PREFERRED)

SOLDER MASK DETAILS

4218900/E 08/2022

NOTES: (continued)

4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature

number SLUA271 (www.ti.com/lit/slua271).

5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown

on this view. It is recommended that vias under paste be filled, plugged or tented.

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EXAMPLE STENCIL DESIGN

DSG0008A

WSON - 0.8 mm max height

PLASTIC SMALL OUTLINE - NO LEAD

8X (0.5)

METAL

SYMM

8X (0.25)

(0.45)

SYMM

(0.7)

6X (0.5)

(R0.05) TYP

(0.9)

(1.9)

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL

EXPOSED PAD 9:

87% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE

SCALE:25X

4218900/E 08/2022

NOTES: (continued)

6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

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