5962-9762101VEA [TI]

HIGH-SPEED DIFFERENTIAL LINE DRIVER; 高速差分线路驱动器
5962-9762101VEA
型号: 5962-9762101VEA
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

HIGH-SPEED DIFFERENTIAL LINE DRIVER
高速差分线路驱动器

驱动器
文件: 总13页 (文件大小:229K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SN55LVDS31-SP  
www.ti.com  
SLLSEB5 MARCH 2012  
HIGH-SPEED DIFFERENTIAL LINE DRIVER  
Check for Samples: SN55LVDS31-SP  
1
FEATURES  
QML-V Qualified, SMD 5962-97621  
Cold Sparing for Space and High Reliability  
Applications Requiring Redundancy  
Meet or Exceed the Requirements of ANSI  
TIA/EIA-644 Standard  
J OR W PACKAGE  
(TOP VIEW)  
Low-Voltage Differential Signaling With Typical  
Output Voltage of 350 mV and 100-Load  
Typical Output Voltage Rise and Fall Times of  
500 ps (400 Mbps)  
1A  
1Y  
VCC  
4A  
4Y  
4Z  
G
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
Typical Propagation Delay Times of 1.7 ns  
Operate From a Single 3.3-V Supply  
1Z  
G
Power Dissipation 25 mW Typical Per Driver at  
200 MHz  
2Z  
2Y  
3Z  
Driver at High Impedance When Disabled or  
With VCC = 0  
2A  
10 3Y  
3A  
GND  
9
Bus-Terminal ESD Protection Exceeds 8 kV  
Low-Voltage TTL (LVTTL) Logic Input Levels  
DESCRIPTION  
The SN55LVDS31 is a differential line driver that implements the electrical characteristics of low-voltage  
differential signaling (LVDS). This signaling technique lowers the output voltage levels of 5-V differential standard  
levels (such as TIA/EIA-422B) to reduce the power, increase the switching speeds, and allow operation with a  
3.3-V supply rail. This driver will deliver a minimum differential output voltage magnitude of 247 mV into a 100-  
load when enabled.  
The intended application of this device and signaling technique is both point-to-point and multidrop (one driver  
and multiple receivers) data transmission over controlled impedance media of approximately 100 . The  
transmission media may be printed-circuit board traces, backplanes, or cables. The ultimate rate and distance of  
data transfer is dependent upon the attenuation characteristics of the media and the noise coupling to the  
environment.  
The SN55LVDS31 is characterized for operation from –55°C to 125°C.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2012, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
SN55LVDS31-SP  
SLLSEB5 MARCH 2012  
www.ti.com  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
ORDERING INFORMATION(1)  
TA  
PACKAGE(2)  
CDIP - J  
ORDERABLE PART NUMBER  
TOP-SIDE MARKING  
5962-9762101VEA  
5962-9762101VFA  
5962-9762101VEA  
–55°C to 125°C  
CFP - W  
5962-9762101VFA  
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
website at www.ti.com.  
(2) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at  
www.ti.com/sc/package.  
xxx  
Logic Symbol  
SN55LVDS31 Logic Diagram (Positive Logic)  
SN55LVDS31  
4
G
1  
12  
4
G
G
2
3
EN  
1
1Y  
1Z  
12  
1A  
G
6
5
2
3
7
2Y  
2Z  
1Y  
1Z  
1
2A  
3A  
4A  
1A  
10  
11  
6
5
9
3Y  
3Z  
2Y  
2Z  
3Y  
3Z  
4Y  
4Z  
7
2A  
10  
11  
14  
13  
14  
13  
9
15  
4Y  
4Z  
3A  
15  
4A  
This symbol is in accordance with ANSI/IEEE Std 91-1984 and  
IEC Publication 617-12.  
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FUNCTION TABLE  
Table 1. SN55LVDS31(1)  
ENABLES  
OUTPUTS  
INPUT  
A
G
H
H
X
X
L
G
X
X
L
Y
H
L
Z
L
H
L
H
L
H
H
L
L
L
H
Z
H
H
X
H
X
L
Z
L
Open  
Open  
H
X
L
(1) H = high level, L = low level, X = irrelevant, Z = high impedance (off)  
EQUIVALENT INPUT AND OUTPUT SCHEMATIC DIAGRAMS  
EQUIVALENT OF EACH A INPUT  
EQUIVALENT OF G, G, 1,2EN OR 3,4EN INPUTS  
TYPICAL OF ALL OUTPUTS  
V
CC  
V
CC  
V
CC  
50  
50 Ω  
Input  
Input  
7 V  
10 kΩ  
5 Ω  
Y or Z  
Output  
7 V  
300 kΩ  
7 V  
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ABSOLUTE MAXIMUM RATINGS(1)  
over operating free-air temperature range (unless otherwise noted)  
UNIT  
VCC  
VI  
Supply voltage range(2)  
–0.5 V to 4 V  
Input voltage range  
–0.5 V to VCC + 0.5 V  
See Dissipation Rating Table  
260°C  
Continuous total power dissipation  
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds  
Storage temperature range  
Tstg  
–65°C to 150°C  
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating  
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) All voltages, except differential I/O bus voltages, are with respect to the network ground terminal.  
DISSIPATION RATING TABLE  
TA 25°C  
DERATING FACTOR(1)  
ABOVE TA = 25°C  
TA = 70°C  
TA = 85°C  
TA = 125°C  
PACKAGE  
POWER RATING  
POWER RATING  
POWER RATING  
POWER RATING  
J
1375 mW  
11 mW/°C  
8 mW/°C  
880 mW  
640 mW  
715 mW  
520 mW  
275 mW  
200 mW  
W
1000 mW  
(1) This is the inverse of the junction-to-ambient thermal resistance when board-mounted and with no air flow.  
RECOMMENDED OPERATING CONDITIONS  
MIN NOM  
MAX UNIT  
VCC  
VIH  
VIL  
TA  
Supply voltage  
3
2
3.3  
3.6  
V
V
High-level input voltage  
Low-level input voltage  
Operating free-air temperature  
0.8  
V
–55  
125  
°C  
ELECTRICAL CHARACTERISTICS  
over operating free-air temperature range (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN TYP(1)  
MAX UNIT  
VOD  
Differential output voltage magnitude  
RL = 100 ,  
See Figure 2  
See Figure 2  
247  
–50  
340  
454  
50  
mV  
mV  
ΔVOD  
Change in differential output voltage magnitude RL = 100 ,  
between logic states  
VOC(SS)  
ΔVOC(SS)  
VOC(PP)  
Steady-state common-mode output voltage  
See Figure 3  
See Figure 3  
See Figure 3  
1.125  
–50  
1.2 1.375  
V
Change in steady-state common-mode output  
voltage between logic states  
50  
mV  
mV  
Peak-to-peak common-mode output voltage  
50  
VI = 0.8 V or 2 V, Enabled, No load  
9
25  
20  
35  
ICC  
Supply current  
VI = 0.8 or 2 V,  
RL = 100 , Enabled  
mA  
VI = 0 or VCC  
,
Disabled  
0.25  
4
1
IIH  
IIL  
High-level input current  
Low-level input current  
VIH = 2  
20  
μA  
μA  
VIL = 0.8 V  
0.1  
–4  
10  
VO(Y) or VO(Z) = 0  
VOD = 0  
–24  
±12  
±1  
IOS  
Short-circuit output current  
mA  
IOZ  
High-impedance output current  
Power-off output current  
Input capacitance  
VO = 0 or 2.4 V  
VCC = 0,  
μA  
μA  
pF  
IO(OFF)  
Ci  
VO = 2.4 V  
±4  
3
(1) All typical values are at TA = 25°C and with VCC = 3.3 V.  
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SWITCHING CHARACTERISTICS  
over recommended operating conditions (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN TYP(1)  
MAX UNIT  
tPLH  
tPHL  
tr  
Propagation delay time, low-to-high-level output  
Propagation delay time, high-to-low-level output  
Differential output signal rise time (20% to 80%)  
Differential output signal fall time (80% to 20%)  
Pulse skew (|tPHL – tPLH|)  
0.5  
1
1.4  
1.7  
0.5  
0.5  
0.3  
0.3  
5.4  
2.5  
8.1  
7.3  
4
4.5  
1
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
0.4  
0.4  
RL = 100 , CL = 10 pF,  
See Figure 2  
tf  
1
tsk(p)  
tsk(o)  
tPZH  
tPZL  
tPHZ  
tPLZ  
0.6  
0.6  
15  
15  
17  
15  
Channel-to-channel output skew(2)  
Propagation delay time, high-impedance-to-high-level output  
Propagation delay time, high-impedance-to-low-level output  
Propagation delay time, high-level-to-high-impedance output  
Propagation delay time, low-level-to-high-impedance output  
See Figure 4  
(1) All typical values are at TA = 25°C and with VCC = 3.3 V.  
(2) tsk(o) is the maximum delay time difference between drivers on the same device.  
PARAMETER MEASUREMENT INFORMATION  
I
OY  
Y
Z
I
I
A
V
OD  
V
OZ  
I
OZ  
V
OY  
V
OC  
(V + V )/2  
V
I
OY  
OZ  
Figure 1. Voltage and Current Definitions  
2 V  
Input  
1.4 V  
0.8 V  
t
t
PLH  
PHL  
Y
Z
Input  
(see Note A)  
100  
± 1%  
100%  
80%  
V
OD  
V
OD  
C
= 10 pF  
L
0
(2 Places)  
(see Note B)  
20%  
0%  
t
f
t
r
NOTES: A. All input pulses are supplied by a generator having the following characteristics: t or t 1 ns, pulse repetition rate (PRR) = 50 Mpps,  
r
f
pulse width = 10 ± 0.2 ns.  
B. C includes instrumentation and fixture capacitance within 6 mm of the D.U.T.  
L
Figure 2. Test Circuit, Timing, and Voltage Definitions for the Differential Output Signal  
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PARAMETER MEASUREMENT INFORMATION (continued)  
49.9 Ω ± 1% (2 Places)  
3 V  
0
Y
A
Input  
(see Note A)  
A
V
OC(PP)  
(see Note C)  
Z
V
OC(SS)  
V
OC  
C
L
= 10 pF  
V
OC  
(2 Places)  
(see Note B)  
NOTES: A. All input pulses are supplied by a generator having the following characteristics: t or t 1 ns, pulse repetition rate (PRR) = 50 Mpps,  
r
f
pulse width = 10 ± 0.2 ns.  
B. C includes instrumentation and fixture capacitance within 6 mm of the D.U.T.  
L
C. The measurement of V  
is made on test equipment with a –3-dB bandwidth of at least 300 MHz.  
OC(PP)  
Figure 3. Test Circuit and Definitions for the Driver Common-Mode Output Voltage  
49.9 Ω ± 1% (2 Places)  
Y
0.8 V or 2 V  
Inputs  
Z
(see Note A)  
1.2 V  
G
C
= 10 pF  
V
OY  
V
OZ  
L
G
(2 Places)  
(see Note B)  
1,2EN or 3,4EN  
2 V  
1.4 V  
0.8 V  
G, 1,2EN,  
OR 3,4EN  
2 V  
1.4 V  
0.8 V  
G
t
t
t
PZH  
PHZ  
V
OY  
or  
A at 2 V, G at V and Input to G  
or  
G at GND and Input to G for ’LVDS31 Only  
100%, 1.4 V  
50%  
CC  
V
OZ  
0%, 1.2 V  
t
PZL  
PLZ  
A at 0.8 V, G at V and Input to G  
or  
G at GND and Input to G for ’LVDS31 Only  
100%, 1.2 V  
50%  
0%, 1 V  
CC  
V
OZ  
or  
V
OY  
NOTES: A. All input pulses are supplied by a generator having the following characteristics: t or t < 1 ns, pulse repetition rate (PRR) = 0.5 Mpps,  
r
f
pulse width = 500 ± 10 ns.  
B. C includes instrumentation and fixture capacitance within 6 mm of the D.U.T.  
L
Figure 4. Enable-/Disable-Time Circuit and Definitions  
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TYPICAL CHARACTERISTICS  
SUPPLY CURRENT  
vs  
LOW-TO-HIGH PROPAGATION DELAY TIME  
vs  
FREQUENCY  
FREE-AIR TEMPERATURE  
35  
2.8  
2.6  
2.4  
2.2  
2
Four Drivers Loaded Per  
Figure 3 and Switching  
Simultaneously  
33  
31  
29  
27  
25  
V
= 3.6 V  
CC  
V
= 3.3 V  
CC  
V
CC  
= 3.6 V  
V
CC  
= 3 V  
V = 3 V  
CC  
V
CC  
= 3.3 V  
23  
21  
19  
1.8  
1.6  
17  
15  
50  
100  
150  
200  
-55  
-40 25  
- Free-Air Temperature - °C  
125  
T
f − Frequency − MHz  
A
Figure 5.  
Figure 6.  
HIGH-TO-LOW PROPAGATION DELAY TIME  
vs  
FREE-AIR TEMPERATURE  
3.5  
3
V
= 3.3 V  
V
= 3 V  
CC  
CC  
2.5  
2
V
= 3.6 V  
CC  
1.5  
1
0.5  
0
-55  
-40 25  
- Free-Air Temperature - °C  
125  
T
A
Figure 7.  
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APPLICATION INFORMATION  
The SN55LVDS31 is generally used as a building block for high-speed point-to-point data transmission where  
ground differences are less than 1 V. The SN55LVDS31 can interoperate with RS-422, PECL, and IEEE-P1596.  
Drivers/receivers approach ECL speeds without the power and dual supply requirements.  
TRANSMISSION DISTANCE  
vs  
SIGNALING RATE  
100  
30% Jitter  
(see Note A)  
10  
5% Jitter  
(see Note A)  
1
24 AWG UTP 96  
(PVC Dielectric)  
0.1  
10  
100  
1000  
Signaling Rate − Mbps  
A. This parameter is the percentage of distortion of the unit interval (UI) with a pseudorandom data pattern.  
Figure 8. Typical Transmission Distance Versus Signaling Rate  
3.3 V  
1
16  
1A  
V
CC  
0.1 µF  
0.001 µF  
(see Note A)  
(see Note A)  
2
3
15  
14  
1Y  
1Z  
G
4A  
4Y  
4Z  
G
Z
Z
= 100 Ω  
= 100 Ω  
O
Z
O
= 100 Ω  
4
5
13  
12  
V
CC  
2Z  
See Note B  
O
6
7
11  
10  
9
2Y  
3Z  
3Y  
Z
O
= 100 Ω  
2A  
8
GND  
3A  
NOTES: A. Place a 0.1-µF and a 0.001-µF Z5U ceramic, mica, or polystyrene dielectric, 0805 size, chip capacitor between V and the ground  
CC  
plane. The capacitors should be located as close as possible to the device terminals.  
B. Unused enable inputs should be tied to V or GND, as appropriate.  
CC  
Figure 9. Typical Application Circuit Schematic  
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1/4 ’LVDS31  
Strb/Data_TX  
Tp Bias on  
Twisted-Pair A  
Strb/Data_Enable  
TP  
TP  
’LVDS32  
55  
5 kΩ  
Data/Strobe  
55 Ω  
3.3 V  
20 kΩ  
500 Ω  
500 Ω  
VG on  
Twisted-Pair B  
1 Arb_RX  
20 kΩ  
3.3 V  
20 kΩ  
500 Ω  
500 Ω  
2 Arb_RX  
20 kΩ  
3.3 V  
Twisted-Pair B Only  
Port_Status  
7 kΩ  
7 kΩ  
10 kΩ  
3.3 kΩ  
NOTES: A. Resistors are leadless, thick film (0603), 5% tolerance.  
B. Decoupling capacitance is not shown, but recommended.  
C.  
V
CC  
is 3 V to 3.6 V.  
D. The differential output voltage of the ’LVDS31 can exceed that specified by IEEE1394.  
Figure 10. 100-Mbps IEEE 1394 Transceiver  
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0.01 µF  
3.6 V  
1
16  
1A  
V
CC  
5 V  
0.1 µF  
1N645  
(see Note A)  
(2 places)  
2
3
15  
14  
1Y  
1Z  
4A  
4Y  
4Z  
G
Z
Z
= 100 Ω  
= 100 Ω  
O
Z
O
= 100 Ω  
4
5
13  
12  
V
CC  
G
2Z  
See Note B  
O
6
7
11  
10  
9
2Y  
3Z  
3Y  
Z
O
= 100 Ω  
2A  
8
GND  
3A  
A. Place a 0.1-μF Z5U ceramic, mica, or polystyrene dielectric, 0805 size, chip capacitor between VCC and the ground  
plane. The capacitor should be located as close as possible to the device terminals.  
B. Unused enable inputs should be tied to VCC or GND, as appropriate.  
Figure 11. Operation With 5-V Supply  
COLD SPARING  
Systems using cold sparing have a redundant device electrically connected without power supplied. To support  
this configuration, the spare must present a high-input impedance to the system so that it does not draw  
appreciable power. In cold sparing, voltage may be applied to an I/O before and during power up of a device.  
When the device is powered off, VCC must be clamped to ground and the I/O voltages applied must be within the  
specified recommended operating conditions.  
RELATED INFORMATION  
IBIS modeling is available for this device. Contact the local TI sales office or the TI Web site at www.ti.com for  
more information.  
For more application guidelines, see the following documents:  
Low-Voltage Differential Signaling Design Notes (SLLA014)  
Interface Circuits for TIA/EIA-644 (LVDS) (SLLA038)  
Reducing EMI With LVDS (SLLA030)  
Slew Rate Control of LVDS Circuits (SLLA034)  
Using an LVDS Receiver With RS-422 Data (SLLA031)  
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PACKAGE OPTION ADDENDUM  
www.ti.com  
28-Aug-2012  
PACKAGING INFORMATION  
Status (1)  
Eco Plan (2)  
MSL Peak Temp (3)  
Samples  
Orderable Device  
Package Type Package  
Drawing  
Pins  
Package Qty  
Lead/  
Ball Finish  
(Requires Login)  
5962-9762101VFA  
ACTIVE  
CFP  
W
16  
1
TBD  
A42  
N / A for Pkg Type  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
OTHER QUALIFIED VERSIONS OF SN55LVDS31-SP :  
Catalog: SN55LVDS31  
NOTE: Qualified Version Definitions:  
Catalog - TI's standard catalog product  
Addendum-Page 1  
IMPORTANT NOTICE  
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