UGF1006GS [THINKISEMI]
10.0 Amperes Insulated Package Dual Series Connection Ultra Fast Recovery Rectifiers;
| 型号： | UGF1006GS |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 10.0 Amperes Insulated Package Dual Series Connection Ultra Fast Recovery Rectifiers |
| 文件： | 总2页 (文件大小：816K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UGF1004GS thru UGF1008GS
UGF1004GS/UGF1005GS/UGF1006GS/UGF1007GS/UGF1008GS
Pb Free Plating Product
10.0 Amperes Insulated Package Dual Series Connection Ultra Fast Recovery Rectifiers
Unit : inch (mm)
ITO-220AB/TO-220F-3L
Features
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Ultra fast soft recovery switching for high efficiency
.189(4.8)
.165(4.2)
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
.130(3.3)
.114(2.9)
Application
Automotive Inverters and Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS
.114(2.9)
.098(2.5)
.071(1.8)
.055(1.4)
Car Audio Amplifiers and Sound Device Systems
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.032(.8)
MAX
Mechanical Data
.1
(2.55)
.1
ꢀ
ꢀ
ꢀ
Case: ITO-220AB full plastic isolated package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
(2.55)
Case
Case
Case
Case
ꢀ
ꢀ
ꢀ
Polarity: As marked on diode body
Mounting position: Any
Weight: 1.75 gram approximately
Doubler
Tandem Polarity Tandem Polarity
Suffix "GD" Suffix "GS"
Series
Negative
Common Cathode Common Anode
Suffix "G" Suffix "GA"
Positive
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
UNIT
UGF1004GS UGF1005GS UGF1006GS UGF1007GS UGF1008GS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
200
140
200
300
210
300
400
280
400
10
500
350
500
600
420
600
V
V
V
A
Maximum DC blocking voltage
Maximum average forward rectified current
IF(AV)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
VF
IR
70
A
V
Maximum instantaneous forward voltage (Note 1)
IF= 5 A
0.95
1.25
1.70
25
TJ=25°C
Maximum reverse current @ rated VR
TJ=125°C
10
μA
100
Maximum reverse recovery time (Note 2)
Typical thermal resistance
trr
20
ns
°C/W
°C
RθJC
TJ
6.0
Operating junction temperature range
Storage temperature range
- 55 to +175
- 55 to +175
- 55 to +150
- 55 to +150
TSTG
°C
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Page 1/2
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
UGF1004GS thru UGF1008GS
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
FIG.1 FORWARD CURRENT DERATING CURVE
10
1
12
UGF1004GS/UGF1005GS/UGF1006GS
10
8
TJ=125°C
0.1
6
UGF1007GS/UGF1008GS
4
RESISTIVE OR
INDUCTIVE LOAD
WITH HEATSINK
0.01
0.001
TJ=25°C
2
0
0
25
50
75
100
125
150
175
0
20
40
60
80
100
120
140
CASE TEMPERATURE (°C)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
100
10
1
100
80
60
40
20
0
TJ=125°C
TJ=25°C
8.3ms Single Half Sine Wave
1
10
100
UGF1004GS
UGF1005GS/UGF1006GS
UGF1007GS/UGF1008GS
NUMBER OF CYCLES AT 60 Hz
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
FORWARD VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
1000
100
10
f=1.0MHz
Vsig=50mVp-p
0.1
1
10
100
REVERSE VOLTAGE (V)
Page 2/2
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
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