U10A2CID [THINKISEMI]
10.0 Ampere Insulated Dual Tandem Polarity Ultra Fast Recovery Diodes;
| 型号： | U10A2CID |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 10.0 Ampere Insulated Dual Tandem Polarity Ultra Fast Recovery Diodes |
| 文件： | 总2页 (文件大小：612K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
U10A2CID thru U10A6CID
U10A2CID thru U10A6CID
Pb Free Plating Product
10.0 Ampere Insulated Dual Tandem Polarity Ultra Fast Recovery Diodes
Unit : inch (mm)
ITO-220AB
Features
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Glass passivation pellet
.189(4.8)
.165(4.2)
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
.130(3.3)
.114(2.9)
Application
Automotive Inverters/Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS
.114(2.9)
.098(2.5)
.071(1.8)
Car Audio Amplifiers and Sound Device Systems
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.032(.8)
MAX
Mechanical Data
.1
.1
ꢀ
ꢀ
ꢀ
Case: Isolation ITO-220AB full plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
(2.55)
(2.55)
Case
Case
Case
ꢀ
ꢀ
ꢀ
Negative
Positive
Doubler
Tandem Polarity
Suffix "D"
Common Cathode Common Anode
Suffix "C" Suffix "A"
Weight: 2.03 gram approxiamtely
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
UNIT
SYMBOL
U10A2CID U10A4CID U10A6CID
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=100oC
10.0
100
1.3
A
A
V
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
Maximum Instantaneous Forward Voltage
@ 5.0 A
1.7
VF
IR
0.98
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
uA
uA
nS
10.0
250
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Trr
CJ
35
65
pF
o
R JC
2.2
CW
Operating Junction and Storage
Temperature Range
o
C
-55 to +150
TJ, TSTG
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.04
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
U10A2CID thru U10A6CID
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
10
8
100
80
60
40
20
0
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
6
4
2
60 Hz Resistive or
Inductive load
0
0
50
100
150
1
10
100
CASE TEMPERATURE, oC
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
50
U10A2CID
TJ=125oC
100
U10A4CID
U10A6CID
5.0
10
TJ=25oC
1
1
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Rev.04
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
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