SF1601G [THINKISEMI]
16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes; 16.0安培玻璃钝化超快速恢复整流二极管
| 型号： | SF1601G |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes |
| 文件： | 总2页 (文件大小：304K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SF1601G thru SF1608G
SF1601G thru SF1608G
Pb Free Plating Product
16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes
Unit : inch (mm)
TO-220AB
Features
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Fast switching for high efficiency
Low forward voltage drop
High current capability
.139(3.55)
MIN
.054(1.39)
.045(1.15)
Low reverse leakage current
High surge current capability
Application
Automotive Environment|DC Motor Control
ꢀ
ꢀ
ꢀ
Plating Power Supply|UPS
Amplifier and Sound Device System
.038(0.96)
.025(0.65)MAX
.019(0.50)
Mechanical Data
ꢀ
ꢀ
ꢀ
Case: Molded plastic TO-220AB Heatsink
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
.1(2.54)
.1(2.54)
Case
Case
Case
ꢀ
ꢀ
ꢀ
Polarity:Color band denotes cathode
Mounting position: Any
Weight: 2.03 grams
Doubler
Series Connection
Suffix "D"
Negative
Common Anode
Suffix "A"
Positive
Common Cathode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SF1601G SF1602G SF1604G SF1605G SF1606G SF1608G
SF1601GA SF1602GA SF1604GA SF1605GA SF1606GA SF1608GA
SF1601GD SF1602GD SF1604GD SF1605GD SF1606GD SF1608GD
Common Cathode
UNIT
SYMBOL
Common Anode Suffix "A"
Anode and Cathode Coexistence Suffix "D"
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
RRM
RMS
50
35
50
100
70
200
140
200
300
210
300
400
280
400
600
420
600
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
V
DC
100
16.0
A
A
V
IF(AV)
Current TC
=100oC
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
I
FSM
175
150
Maximum Instantaneous Forward Voltage
@ 8.0 A
V
F
0.98
1.3
1.7
Maximum DC Reverse Current @T
At Rated DC Blocking Voltage @T
J
=25oC
=125oC
uA
uA
nS
10.0
250
I
R
J
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Trr
35
90
pF
oCW
C
J
R
JC
2.2
Operating Junction and Storage
Temperature Range
oC
-55 to + 150
T , TSTG
J
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
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© 2006 Thinki Semiconductor Co.,Ltd.
SF1601G thru SF1608G
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
16
13
10
8
200
175
150
125
100
75
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
6
50
4
25
60 Hz Resistive or
Inductive load
0
0
0
50
100
150
1
10
100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, oC
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
1.0
1000
SF1601G-SF1604G
TJ=125oC
SF1605G-SF1606G
100
10
SF1608G
TJ=25oC
0.1
1
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
http://www.thinkisemi.com/
© 2006 Thinki Semiconductor Co.,Ltd.
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