MUR1620G [THINKISEMI]
16.0 Ampere Heatsink Single Ultra Fast Recovery Rectifier Diodes;
| 型号： | MUR1620G |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 16.0 Ampere Heatsink Single Ultra Fast Recovery Rectifier Diodes |
| 文件： | 总2页 (文件大小：732K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUR1620G thru MUR1660G
MUR1620G/MUR1640G/MUR1660G
Pb Free Plating Product
16.0 Ampere Heatsink Single Ultra Fast Recovery Rectifier Diodes
TO-220AC/TO-220C-2L
Unit : inch (mm)
Features
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Latest P/G technology with ultra fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
.139(3.55)
MIN
.054(1.39)
.045(1.15)
Application
Automotive Inverters and Solar Inverters
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Plating Power Supply,SMPS,Motor Control and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
.038(0.96)
.019(0.50)
.025(0.65)MAX
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Case: Heatsink TO-220-2L
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
.1(2.54)
.1(2.54)
Internal Configuration
Base Backside
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Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SYMBOL
UNIT
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
MUR1620G
MUR1640G
MUR1660G
400
280
400
VRRM
VRMS
VDC
200
140
200
600
420
600
V
V
V
Maximum DC Blocking Voltage
Maximum Average Forward
I(AV)
16.0
A
Rectified Current
@TA =125℃
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
IFSM
250
A
Super Imposed on Rated Load(JEDEC Method)
Peak Forward Voltage at 16.0A DC
0.95
VF
IR
1.50
V
1.25
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ=25℃
5.0
50
μA
@TJ=125℃
Maximum Reverse Recovery Time(Note1)
Typical Junction Capacitance (Note2)
Typical Thermal Resistance (Note3)
TRR
CJ
nS
pF
35-50
80
16
RθJA
℃/W
℃
-55 to + 150
Operating and Storage Temperature Range
TJ,TSTG
NOTES:1.Measured with IF=0.5A,IR=1A,IRR=0.25A
2.Measured at 1.0 MHZ and applied reverse voltage of 4.0VDC.
3.Thermal resistance junction to ambient
Page 1/2
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
MUR1620G thru MUR1660G
(MUR1620G thru MUR1660G)
RATING ANDCHARACTERTIC CURVES
FIG.1- TYPICAL FORWARD CURRENT DERATING CURVE
20
FIG.2-TYPICAL REVERSE
CHARACTERISTICS
1000
15
12
SINGLE PHASE HALF
WAVE 60HZ
TJ=125°C
8
RESISTIVE OR
100
INDUCTIVE LOAD
4
0
0
250
125
10
AMBIENT TEMPERATURE ℃
TJ=25°C
FIG.3-MAXIMUM NON-REPETITVE FORWARD SURGE CURRENT
1.0
0.1
250
200
120 140
20
40
60
80 100
100
PERCENT OF RATED PEAK
REVERSE VOLTAGE(%)
8.3 ms Single Half-Sine-Wave
(JEDEC METOD)
0
1
2
10
20
5
50
100
NUMBER OF CYCLES AT 60HZ
FIG.4-TYPICAL INSTANTAEOUS
FORWARD CHARACTERISTICS
FIG.5-TYPICAL JUNCTION CAPACITANCE
40
200
100
MUR1620G
20
10
MUR1660G
40
4
20
10
2
TJ=25°C
MUR1640G
1.0
0.4
4
2
TJ=25°C
PULSE WIDTH 300uS
1% DUTY CYCLE
0.2
0.1
1
0.1 0.2
0.4
1
2
4
10 20
40 100
0.6 0.8
1.6
1.8
2.0
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE, (V)
REVERSE VOLTAGE,(V)
Page 2/2
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
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