MUR1620CTRG [THINKISEMI]
16.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers;
| 型号： | MUR1620CTRG |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 16.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers |
| 文件： | 总2页 (文件大小：345K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUR1620CTG thru MUR1660CTG
MUR1620CTG/MUR1640CTG/MUR1660CTG
Pb Free Plating Product
16.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers
TO-220AB/TO-220-3L
Unit : inch (mm)
Features
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Fast switching for high efficiency
Low forward voltage drop
High current capability
.139(3.55)
MIN
.054(1.39)
.045(1.15)
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.038(0.96)
.019(0.50)
.025(0.65)MAX
Mechanical Data
ꢀ
ꢀ
ꢀ
Case: Heatsink TO-220AB open metal package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
.1(2.54)
.1(2.54)
Case
Case
Case
Case
ꢀ
ꢀ
ꢀ
Doubler
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "CTDG" Suffix "CTSG"
Series
Negative
Positive
Weight: 2.2 gram approximately
Suffix "CTG"
Suffix "CTRG"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
UNIT
SYMBOL
MUR1620CTG MUR1640CTG MUR1660CTG
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
RRM
RMS
200
140
200
400
280
400
600
420
600
V
Maximum DC Blocking Voltage
V
DC
Maximum Average Forward Rectified
16.0
175
1.3
A
A
V
IF(AV)
(Total Device 2x8A=16A)
℃
Current TC
=125
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
I
FSM
Maximum Instantaneous Forward Voltage
V
F
0.98
1.7
@ 8.0 A (Per Diode/Per Leg)
5.0
100
μA
μA
℃
J
=25
Maximum DC Reverse Current @T
At Rated DC Blocking Voltage @T
I
R
℃
J
=125
nS
pF
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Trr
35
90
C
J
R
JC
1.5
℃
/W
Operating Junction and Storage
Temperature Range
-55 to + 150
℃
T , TSTG
J
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2
http://www.thinkisemi.com.tw/
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.
MUR1620CTG thru MUR1660CTG
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
16
13
10
8
200
175
150
125
100
75
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
6
50
4
25
60 Hz Resistive or
Inductive load
0
0
0
50
100
150
1
10
100
NUMBER OF CYCLES AT 60Hz
℃
CASE TEMPERATURE,
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
80
MUR1620CTG
MUR1640CTG
℃
TJ=125
100
10
1
8
℃
TJ=25
MUR1660CTG
0.1
℃
TJ=25
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
℃
f = 1.0 MHZ
TJ = 25
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
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