K35A120D [THINKISEMI]
;
| 型号： | K35A120D |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | |
| 文件： | 总3页 (文件大小：931K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FMU31UR thru FMU36UR
FMU31UR/FMU32UR/FMU33UR/FMU34UR/FMU35UR/FMU36UR
Pb Free Plating Product
20.0 Ampere Heatsink Dual Series Connection Ultra Fast Recovery Rectifiers
TO-3PN
Features
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Fast switching for high efficiency
Low forward voltage drop
High current capability
Bottom Side Metal Heat Sink
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,Motor Control,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
ꢀ
ꢀ
ꢀ
Case: Heatsink TO-3PN open metal package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Case
Case
Case
Case
Series
ꢀ
ꢀ
ꢀ
Polarity: As marked on diode body
Mounting position: Any
Weight: 0.61 gram approximately
Doubler
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "UR"
Negative
Positive
Suffix "S"
Suffix "R"
Suffix "U"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
℃
Rating at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
FMU33UR FMU35UR
FMU34UR FMU36UR
FMU31UR
FMU32UR
UNIT
SYMBOL
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
RRM
RMS
200
140
200
400
280
400
600
420
600
V
Maximum DC Blocking Voltage
V
DC
Maximum Average Forward Rectified
20.0
200
1.3
A
A
V
IF(AV)
℃
(Total Device 2x10A=20A)
Current TC
=125
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
I
FSM
Maximum Instantaneous Forward Voltage
V
F
0.98
120
1.7
(Per Diode/Per Leg)
@ 10.0 A
5.0
100
μA
μA
Maximum DC Reverse Current @T
At Rated DC Blocking Voltage @T
J
=25
℃
℃
I
R
J
=125
nS
pF
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Trr
35
C
J
70
R
JC
0.85
℃
/W
Operating Junction and Storage
Temperature Range
-55 to + 150
℃
T , TSTG
J
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/3
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
FMU31UR thru FMU36UR
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
20
16
10
8
200
175
150
125
100
75
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
6
50
4
25
60 Hz Resistive or
Inductive load
0
0
0
50
100
150
1
10
100
CASE TEMPERATURE, oC
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
100
FMU31UR/FMU32UR
TJ=125oC
FMU33UR/FMU34UR
100
10
10
TJ=25oC
FMU35UR/FMU36UR
0.1
1
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Page 2/3
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
FMU31UR thru FMU36UR
Package Information
TO-3PN Package Outline
Dimensions(millimeters)
Symbol
Min.
4.60
1.50
2.20
0.80
2.90
1.90
0.40
5.25
15.3
13.2
13.1
9.10
19.7
19.1
18.3
2.80
4.80
3.00
Max.
5.00
2.00
2.60
1.20
3.30
2.30
0.80
5.65
15.7
13.6
13.5
9.50
20.1
20.1
18.7
3.20
5.20
3.40
A
A1
A2
b
b1
b2
c
e
E
E1
E2
E3
H
H1
H2
H3
G
ФP
Page 3/3
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
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