GPA1601R [THINKISEMI]
16.0 Amperes Heatsink Reverse Polarity Glass Passivated Avalanche Rectifier Diode;
| 型号： | GPA1601R |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 16.0 Amperes Heatsink Reverse Polarity Glass Passivated Avalanche Rectifier Diode |
| 文件： | 总3页 (文件大小：1191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GPA1601R thru GPA1607R
GPA1601R thru GPA1607R
Pb Free Plating Product
16.0 Amperes Heatsink Reverse Polarity Glass Passivated Avalanche Rectifier Diode
TO-220AC/TO-220-2L
Features
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Avalanche energy rated(100% guarantee)
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
PhotoVoltaic BY-PASS DIODE
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PhotoVoltaic High-amperage Combiner Boxes
Alternator(Automotive Wireharness/Capacitor Bank)
Mechanical Data
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Case: TO-220AC open metal heatsink package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Internal Configuration
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Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
A
K
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
GPA GPA GPA GPA GPA GPA GPA
1601R 1602R 1603R 1604R 1605R 1606R 1607R
Type Number
Symbol
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM 50
VRMS 35
100
70
200
140
200
400
280
400
16.0
600
420
600
800 1000
560 700
800 1000
V
V
V
A
Maximum DC Blocking Voltage
VDC
I(AV)
50
100
℃
Maximum Average Forward Rectified @Tc = 120
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method )
250
IFSM
VF
A
V
Maximum Instantaneous Forward Voltage @ 16.0A
1.1
℃
Maximum DC Reverse Current @ TA=25
5.0
50
IR
uA
pF
℃
at Rated DC Blocking Voltage @ TA=125
Typical Junction Capacitance (Note 1)
100
1.5
Cj
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
℃
/W
RθJC
TJ
℃
℃
-65 to +150
-65 to +150
TSTG
Note 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
2. Mount on P.C. Board with 2"x3" x0.25" Al-plate
Page 1/3
http://www.thinkisemi.com.tw/
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.
GPA1601R thru GPA1607R
20.0
16.0
12.0
8.0
100
10
1.0
0.1
4.0
0
Pulse width = 300µs
2% duty cycle
0
60
120
180
0.2
0.6
1.0
1.4
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
300
250
200
150
1000
8.3 ms single half-sine-wave
JEDEC method
100
100
50
0
10
0.1
1.0
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
Fig. 4 Typical Junction Capacitance
Page 2/3
http://www.thinkisemi.com.tw/
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.
GPA1601R thru GPA1607R
TO-220AC/TO-220-2L Package Outline:
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
.139(3.55)
MIN
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.025(0.65)MAX
.1(2.54)
.1(2.54)
Unit : inch (mm)
Page 3/3
http://www.thinkisemi.com.tw/
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.
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