FESF16NTR [THINKISEMI]
16.0 Ampere Insulated Package Negative Ultra Fast Recovery Rectifier Diode;型号: | FESF16NTR |
厂家: | Thinki Semiconductor Co., Ltd. |
描述: | 16.0 Ampere Insulated Package Negative Ultra Fast Recovery Rectifier Diode |
文件: | 总2页 (文件大小:246K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FESF16ATR thru FESF16NTR
Pb Free Plating Product
FESF16ATR thru FESF16NTR
16.0 Ampere Insulated Package Negative Ultra Fast Recovery Rectifier Diode
ITO-220AC(TO-220F-2L)
Unit:inch(mm)
Features
.419(10.66)
.387(9.85)
※ ThinkiSemi latest&matured process FRD/FRED
※ Low forward voltage drop
※ High current capability
.196(5.00)
.163(4.16)
.167(3.73)
.122(3.10)
.118(3.00)
.079(2.00)
※
Low reverse leakage current
※ High surge current capability
Application
※ Automotive Inverters and Solar Inverters
※ Car Audio Amplifiers and Sound Device Systems
※ Plating Power Supply,Motor Control,UPS and SMPS etc.
.038(0.96)
.019(0.50)
.025(0.65)MAX
Mechanical Data
※
※
Case:ITO-220AC(TO-220F-2L) fully plastic isolated package
Epoxy: UL 94V-0 rate flame retardant
.1(2.54)
.1(2.54)
※ Terminals: Solderable per MIL-STD-202 method 208
※ Polarity: As marked on diode body
※ Mounting position: Any
Internal Configuration
※ Weight: 2.0 gram approximately
Negative
Positive
Suffix "T"
Suffix "TR"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
FESF16ATR
FESF16ETR
FESF16FTR
FESF16GTR
FESF16HTR
FESF16ITR
FESF16JTR
FESF16KTR
FESF16LTR
FESF16BTR
FESF16CTR
FESF16DTR
PARAMETER
SYMBOL
FESF16MTR
FESF16NTR
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1200
840
V
V
V
Maximum DC Blocking Voltage
1000
1200
Maximum Average Forward Rectified
Current TC=125℃
16.0
IF(AV)
IFSM
A
A
V
(Total Device 16.0A)
Peak Forward Surge Current, 8.3ms single Half
sine-wave superimposed on rated load (JEDEC
method)(Per Diode/Per Leg)
300
Maximum Instantaneous Forward Voltage
@16.0A(Per Diode/Per Leg)
VF
(Typical)
1.50-1.70
0.85-0.95
1.00-1.25
1.25-1.50
Maximum DC Reverse Current @TJ=25℃
At Rated DC Blocking Voltage @TJ=125℃
1.0
100
μA
μA
IR
Maximum Reverse Recovery Time (Note1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
25-50
50-75
Trr
CJ
nS
pF
160
3.0
RθJC
℃/W
Operating Junction and Storage
Temperature Range
-55 to +175
TJ,TSTG
℃
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Note:(3)Thermal Resistance junction to case.
Page 1/2
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
FESF16ATR thru FESF16NTR
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
16
300
240
180
120
60
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
12.8
9.6
6.4
3.2
60 Hz Resistive or
Inductive load
0
0
125
187.5
62.5
1
10
100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE,
℃
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
80
FESF16ATR/FESF16BTR/FESF16CTR/FESF16DTR
TJ=125℃
100
FESF16ETR/FESF16FTR/FESF16GTR
FESF16HTR/FESF16ITR/FESF16JTR
8
10
℃
TJ=25
1
FESF16KTR/FESF16LTR/FESF16MTR/FESF16NTR
1
℃
TJ=25
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
℃
TJ = 25
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
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