F40UP30DN [THINKISEMI]
40Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers;
| 型号： | F40UP30DN |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 40Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers |
| 文件： | 总2页 (文件大小：5114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
F40UP30DN
F40UP30DN
Pb Free Plating Product
40Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers
TO-3PB(TO-3PN)
APPLICATION
Cathode(Bottom Side Metal Heatsink)
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
Anode
PRODUCT FEATURE
Cathode
· Ultrafast Recovery Time
Internal Configuration
Anode
· Soft Recovery Characteristics
· Low Recovery Loss
Base Backside
· Low Forward Voltage
—
· High Surge Current Capability
· Low Leakage Current
GENERAL DESCRIPTION
F40UP30DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
Absolute Maximum Ratings
Parameter
Symbol
Test Conditions
Values
Units
Repetitive peak reverse voltage
VRRM
300
V
Continuous forward current
IF(AV)
40
Tc =110°C
A
Single pulse forward current
Maximum repetitive forward current
Operating junction
IFSM
IFRM
Tj
400
100
175
Tc =25°C
Square wave, 20kHZ
°C
°C
Storage temperatures
Tstg
-55 to +175
Electrical characteristics (Ta=25°C unless otherwise specified)
Parameter
Symbol
VBR,
Test Conditions
Min
Typ.
Max.
Units
Breakdown voltage
Blocking voltage
IR=100µA
300
VR
IF=20A
0.99
0.92
1.20
1.00
10
V
Forward voltage
(Per Diode)
VF
IF=30A, Tj =125°C
VR= VRRM
Reverse leakage
IR
µA
current(Per Diode)
100
Tj=150°C, VR=600V
IF=0.5A, IR=1A, IRR=0.25A
30
22
40
35
Reverse recovery
time(Per Diode)
trr
ns
IF=1A,VR=30V, di/dt =200A/us
Thermal characteristics
Paramter
Symbol
Typ
0.8
Units
℃/W
Junction-to-Case
RθJC
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/
F40UP30DN
Electrical performance (typical)
Forward Characteristic(typ.)
100.0
Reverse Characteristic(typ.)
Ta=25
℃
10.0
1.0
0.1
0.0
0.0
Ta=25
℃
Ta=125
℃
Ta=125
℃
10.0
1.0
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
100
Forward Voltage VF(V)
Reverse Voltage VR(V)
Package Information
TO-3PB PACKAGE
Dimensions(millimeters)
Symbol
Min.
4.60
1.30
2.20
0.80
2.90
1.90
0.40
5.25
15.3
13.2
13.1
9.10
19.7
19.1
18.3
2.80
4.80
3.00
Max.
5.00
1.70
2.60
1.20
3.30
2.30
0.80
5.65
15.7
13.6
13.5
9.50
20.1
20.1
18.7
3.20
5.20
3.40
A
A1
A2
b
b1
b2
c
e
E
E1
E2
E3
H
H1
H2
H3
G
ФP
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
Page 2/2
http://www.thinkisemi.com.tw/
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