F12C40A [THINKISEMI]
12.0 Ampere Common Anode Fast Recovery Rectifier Diodes; 12.0安培共阳极快恢复整流二极管
| 型号： | F12C40A |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 12.0 Ampere Common Anode Fast Recovery Rectifier Diodes |
| 文件： | 总2页 (文件大小：630K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
F12C20A thru F12C60A
F12C20A thru F12C60A
Pb Free Plating Product
12.0 Ampere Common Anode Fast Recovery Rectifier Diodes
Unit : inch (mm)
TO-220AB
Feature
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Fast switching for high efficiency
Low forward voltage drop
High current capability
.139(3.55)
MIN
.054(1.39)
.045(1.15)
Low reverse leakage current
High surge current capability
Application
Automotive Environment(Inverters/Converters)
ꢀ
ꢀ
ꢀ
Plating Power Supply,Adaptor,SMPS and UPS
Car Audio Amplifiers and Sound Device System
.038(0.96)
.019(0.50)
.025(0.65)MAX
Mechanical Data
ꢀ
ꢀ
ꢀ
Case:TO-220AB Heatsink
.1(2.54)
.1(2.54)
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Case
Case
Case
ꢀ
ꢀ
ꢀ
Doubler
Tandem Polarity
Suffix "D"
Negative
Common Anode
Suffix "A"
Positive
Common Cathode
Suffix "C"
Weight: 2.2 gram approximately
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Rating at 25
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
F12C20C
F12C40C
F12C40A
F12C40D
F12C60C
UNIT
SYMBOL
F12C60A
F12C60D
F12C20A
F12C20D
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=100oC
12.0
100
1.3
A
A
V
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
Maximum Instantaneous Forward Voltage
@ 6.0 A
1.7
VF
IR
0.98
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
uA
uA
nS
10.0
250
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Trr
CJ
35
65
pF
o
R JC
2.2
CW
Operating Junction and Storage
Temperature Range
o
C
-55 to +150
TJ, TSTG
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
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© 2006 Thinki Semiconductor Co.,Ltd.
F12C20A thru F12C60A
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
12
10
100
80
60
40
20
0
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
7
5
2
0
60 Hz Resistive or
Inductive load
0
50
100
150
1
10
100
CASE TEMPERATURE, oC
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
10
F12C20A
TJ=125oC
100
F12C40A
F12C60A
6
10
TJ=25oC
1
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
http://www.thinkisemi.com/
© 2006 Thinki Semiconductor Co.,Ltd.
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