BA50ZN [THINKISEMI]
50 Ampere Avalanche Type Block Rectifier Diodes for Mitsubishi Alternator;型号: | BA50ZN |
厂家: | Thinki Semiconductor Co., Ltd. |
描述: | 50 Ampere Avalanche Type Block Rectifier Diodes for Mitsubishi Alternator |
文件: | 总3页 (文件大小:1250K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BA50ZP/BA50ZN
BA50ZP/BA50ZN
Pb Free Plating Product
50 Ampere Avalanche Type Block Rectifier Diodes for Mitsubishi Alternator
BLOCK/TO-230/BA/MR/K series
Feature:
ꢀ Low leakage
ꢀ Low forward voltage drop
ꢀ High current capability
ꢀ High forward surge current capability
Application:
Block Diode/Alternator Diode with AEC-Q101 Grade Quality
ꢀ
ꢀ
Stack Silicon Diffused Diode alternative
Special for Automotive AC Alternator rectifier application
ꢀ
Mechanical Data:
ꢀ Technology: Latest Glass Passivation Pellet/Cu Clip Bonding
ꢀ Case: Vacuum soldered/Sintered temperature < 260
ꢀ Cathode Polarity: As marked on body
ꢀ Lead: Plated lead, solderable per MIL-STD-202E method 208C
ꢀ Mounting: BLOCK/TO-230/BA/MR/K series package type
℃
Case
Lead
Case
Lead
BA50ZP
Positive
Suffix:"P"
BA50ZN
Negative
Suffix:"N"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
·
·
·
Ratings at 25℃ ambient temperature unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load
For capacitive load derate current by 20%
BA50ZP/BA50ZN
Electrical Characteristics @ 25℃
SYMBOLS
MIN
NOMINAL
MAX
UNITS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
VRRM
VRRM
VRSM
VDC
20
20
20
Volts
Transient Peak Reverse Voltage
DC Blocking Voltage
50
Average Rectified Forward Current (Tc=125℃)
Io
Amps
Amps
Repetitive Peak Reverse Surge Current
Tc=10msec Dury Cycle<1%
IRSM
Vbr1
50
Breakdown Voltage (Vbr@ir=100mA, Tc=25℃)
24
25 -27
32
40
Volts
Volts
Vz
Zener Voltage
Vbr2
VF
IFSM
IR
Ir=90Amps, Tc=150℃, PW=80usec
Forward Voltage Drop @If=100Amps<300usec
1.05
600
1.08
2.0
Volts
Amps
uAmps
℃
Peak Forward Surge Current
Reverse Leakage (VR=17Vdc) TA=25℃
Operating and Storage Junction Temperature Range
1.0
TJ ,TSTG
-65 to +175
Notes: 1. Enough heatsink must be considered in application.
Page 1/3
http://www.thinkisemi.com.tw/
Rev.09T
© 1995 Thinki Semiconductor Co., Ltd.
BA50ZP/BA50ZN
IRRM (EXP)
IRRM (EXP)
0 10
30
50
Surge current characteristics
I F - VF
1000
100
10
1
0.7
0.8
0.9
1
1.1
1.2
FORWARD VOLTAGE V
(V)
F
I F(AV) - Ta
Ta=Tc
50
0
0
40
80
120
160
AMBIENT TEMPERATURE Ta ( C)
.
.
.
Page 2/3
Rev.09T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
BA50ZP/BA50ZN
BLOCK/TO-230/BA/MR/K Series Package Outline
A3
A2
A1
D3
E
F
G
DIM MILLIMETERS DIM MILLIMETERS
_
_
+
5.0 0.3
+
A1
A2
A3
B1
B2
C1
C2
D1
10.0 0.3
D2
D3
E
F
G
_
_
+
+
13.5 0.3
4.5 0.3
_
_
+
+
24.0 0.5
1.9 0.3
_
_
+
+
8.5 0.3
9.0 0.3
_
_
+
+
10.0 0.3
1.0 0.3
_
_
+
+
2.0 0.3
H
T
4.4 0.5
_
_
+
+
5.0 0.3
0.6 0.3
_
+
2.5 0.3
Page 3/3
Rev.09T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
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