BA50ZN [THINKISEMI]

50 Ampere Avalanche Type Block Rectifier Diodes for Mitsubishi Alternator;
BA50ZN
型号: BA50ZN
厂家: Thinki Semiconductor Co., Ltd.    Thinki Semiconductor Co., Ltd.
描述:

50 Ampere Avalanche Type Block Rectifier Diodes for Mitsubishi Alternator

文件: 总3页 (文件大小:1250K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
                      
                      
                      
                      
                      
                      
                      
                      
                     
                     
                     
                     
                     
                     
                     
                     
                     
                     
BA50ZP/BA50ZN  
BA50ZP/BA50ZN  
Pb Free Plating Product  
50 Ampere Avalanche Type Block Rectifier Diodes for Mitsubishi Alternator  
BLOCK/TO-230/BA/MR/K series  
Feature:  
Low leakage  
Low forward voltage drop  
High current capability  
High forward surge current capability  
Application:  
Block Diode/Alternator Diode with AEC-Q101 Grade Quality  
Stack Silicon Diffused Diode alternative  
Special for Automotive AC Alternator rectifier application  
Mechanical Data:  
Technology: Latest Glass Passivation Pellet/Cu Clip Bonding  
Case: Vacuum soldered/Sintered temperature < 260  
Cathode Polarity: As marked on body  
Lead: Plated lead, solderable per MIL-STD-202E method 208C  
Mounting: BLOCK/TO-230/BA/MR/K series package type  
Case  
Lead  
Case  
Lead  
BA50ZP  
Positive  
Suffix:"P"  
BA50ZN  
Negative  
Suffix:"N"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
·
·
·
Ratings at 25ambient temperature unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load  
For capacitive load derate current by 20%  
BA50ZP/BA50ZN  
Electrical Characteristics @ 25  
SYMBOLS  
MIN  
NOMINAL  
MAX  
UNITS  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
VRRM  
VRRM  
VRSM  
VDC  
20  
20  
20  
Volts  
Transient Peak Reverse Voltage  
DC Blocking Voltage  
50  
Average Rectified Forward Current (Tc=125)  
Io  
Amps  
Amps  
Repetitive Peak Reverse Surge Current  
Tc=10msec Dury Cycle1%  
IRSM  
Vbr1  
50  
Breakdown Voltage (Vbr@ir=100mA, Tc=25)  
24  
25 -27  
32  
40  
Volts  
Volts  
Vz  
Zener Voltage  
Vbr2  
VF  
IFSM  
IR  
Ir=90Amps, Tc=150, PW=80usec  
Forward Voltage Drop @If=100Amps300usec  
1.05  
600  
1.08  
2.0  
Volts  
Amps  
uAmps  
Peak Forward Surge Current  
Reverse Leakage (VR=17Vdc) TA=25℃  
Operating and Storage Junction Temperature Range  
1.0  
TJ ,TSTG  
-65 to +175  
Notes: 1. Enough heatsink must be considered in application.  
Page 1/3  
http://www.thinkisemi.com.tw/  
Rev.09T  
© 1995 Thinki Semiconductor Co., Ltd.  
BA50ZP/BA50ZN  
IRRM (EXP)  
IRRM (EXP)  
0 10  
30  
50  
Surge current characteristics  
I F - VF  
1000  
100  
10  
1
0.7  
0.8  
0.9  
1
1.1  
1.2  
FORWARD VOLTAGE V  
(V)  
F
I F(AV) - Ta  
Ta=Tc  
50  
0
0
40  
80  
120  
160  
AMBIENT TEMPERATURE Ta ( C)  
.
.
.
Page 2/3  
Rev.09T  
© 1995 Thinki Semiconductor Co., Ltd.  
http://www.thinkisemi.com.tw/  
BA50ZP/BA50ZN  
BLOCK/TO-230/BA/MR/K Series Package Outline  
A3  
A2  
A1  
D3  
E
F
G
DIM MILLIMETERS DIM MILLIMETERS  
_
_
+
5.0 0.3  
+
A1  
A2  
A3  
B1  
B2  
C1  
C2  
D1  
10.0 0.3  
D2  
D3  
E
F
G
_
_
+
+
13.5 0.3  
4.5 0.3  
_
_
+
+
24.0 0.5  
1.9 0.3  
_
_
+
+
8.5 0.3  
9.0 0.3  
_
_
+
+
10.0 0.3  
1.0 0.3  
_
_
+
+
2.0 0.3  
H
T
4.4 0.5  
_
_
+
+
5.0 0.3  
0.6 0.3  
_
+
2.5 0.3  
Page 3/3  
Rev.09T  
© 1995 Thinki Semiconductor Co., Ltd.  
http://www.thinkisemi.com.tw/  

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