80CPU02 [THINKISEMI]
80Amperes,200Volts Heatsink Common Cathode Ultra Fast Recovery Rectifiers;
| 型号： | 80CPU02 |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 80Amperes,200Volts Heatsink Common Cathode Ultra Fast Recovery Rectifiers |
| 文件： | 总2页 (文件大小：5156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
80CPU02
80CPU02
Pb Free Plating Product
80Amperes,200Volts Heatsink Common Cathode Ultra Fast Recovery Rectifiers
TO-3PB(TO-3PN)
APPLICATION
Cathode(Bottom Side Metal Heatsink)
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
Anode
PRODUCT FEATURE
Cathode
· Ultrafast Recovery Time
Internal Configuration
Anode
· Soft Recovery Characteristics
· Low Recovery Loss
Base Backside
· Low Forward Voltage
—
· High Surge Current Capability
· Low Leakage Current
GENERAL DESCRIPTION
80CPU02 using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
Absolute Maximum Ratings
Parameter
Symbol
Test Conditions
Values
Units
Repetitive peak reverse voltage
VRRM
200
V
Continuous forward current
IF(AV)
80
Tc =110°C
A
Single pulse forward current
Maximum repetitive forward current
Operating junction
IFSM
IFRM
Tj
800
320
175
Tc =25°C
Square wave, 20kHZ
°C
°C
Storage temperatures
Tstg
-55 to +175
Electrical characteristics (Ta=25°Cunless otherwise specified)
Parameter
Breakdown voltage
Blocking voltage
Symbol
VBR,
Test Conditions
Min
Typ.
Max.
Units
200
IR=100µA
VR
IF=40 A
0.97
0.86
1.20
1.00
10
V
Forward voltage
(Per Diode)
VF
IF=40 A, Tj =125°C
VR= VRRM
Reverse leakage
current(Per Diode)
IR
µA
100
Tj=150°C, VR=200V
IF=0.5A, IR=1A, IRR=0.25A
37
25
50
40
Reverse recovery
time(Per Diode)
trr
ns
IF=1A,VR=30V, di/dt =-200A/us
Thermal characteristics
Paramter
Symbol
Typ
0.8
Units
℃/W
Junction-to-Case
RθJC
Rev.08C
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/
80CPU02
Electrical performance (typical)
Forward Characteristic(typ.)
100.0
Reverse Characteristic(typ.)
Ta=25
℃
10.0
1.0
0.1
0.0
0.0
Ta=25
℃
Ta=125
℃
Ta=125
℃
10.0
1.0
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
100
Forward Voltage VF(V)
Reverse Voltage VR(V)
Package Information
TO-3PB PACKAGE
Dimensions(millimeters)
Symbol
Min.
4.60
1.30
2.20
0.80
2.90
1.90
0.40
5.25
15.3
13.2
13.1
9.10
19.7
19.1
18.3
2.80
4.80
3.00
Max.
5.00
1.70
2.60
1.20
3.30
2.30
0.80
5.65
15.7
13.6
13.5
9.50
20.1
20.1
18.7
3.20
5.20
3.40
A
A1
A2
b
b1
b2
c
e
E
E1
E2
E3
H
H1
H2
H3
G
ФP
Rev.08C
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/2
http://www.thinkisemi.com/
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