MCK100-6 [TGS]
SOT-89 Plastic-Encapsulate Transistors; SOT- 89塑封装晶体管型号: | MCK100-6 |
厂家: | Tiger Electronic Co.,Ltd |
描述: | SOT-89 Plastic-Encapsulate Transistors |
文件: | 总2页 (文件大小:68K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TIGER ELECTRONIC CO.,LTD
SOT-89 Plastic-Encapsulate Transistors
SOT-89
MCK 100- 6,- 8 Silicon Planar PNPN Thyristor
FEATURES
1.KATHODE
2.ANODE
3.GATE
Current-IGT : 200 μA
ITRMS 0.8 A
:
V
DRM : MCK100-6:400 V
MCK100-8:600 V
Operating and storage junction temperature range
TJ,Tstg : -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
unless otherwise specified)
Parameter
Symbol
VTM
Test conditions
ITM=1A
MIN
MAX
1.7
UNIT
V
On state voltage
*
Gate trigger voltage
VGT
VAK=7V
0.8
V
Peak Repetitive forward and reverse
blocking voltage
VDRM
I
DRM= 10 μA ,VMAX=1010 V
400
600
V
AND
MCK100-6
VRRM
MCK100-8
Peak forward or reverse blocking
Current
IDRM
IRRM
VAK= Rated
10
5
µA
mA
µA
µA
VDRM or VRRM
Holding current
IH
IHL= 20 mA , Av = 7 V
A2
5
15
30
A1
A
15
Gate trigger current
IGT
VAK=7V
30
80
80
µA
µA
B
200
* Forward current applied for 1 ms maximum duration,duty cycle≤1%。
Typical Characteristics
MCK100-6,-8
相关型号:
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