PHA3135-130M [TE]
RadarPulsedPowerModule, 115, 130,145W,100msPulse 3.1 - 3.5 GHz; RadarPulsedPowerModule ， 115 ， 130,145W ， 100msPulse 3.1 - 3.5 GHz的
| 型号： | PHA3135-130M |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | RadarPulsedPowerModule, 115, 130,145W,100msPulse 3.1 - 3.5 GHz |
| 文件： | 总1页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RadarPulsedPowerModule,115,130,145W,100µsPulse
3.1 - 3.5 GHz
PHA3135-130M
V4.00
Features
●
NPN Silicon Power Transistor
●
Input and Output Matched to 50Ω
●
Duroid Circuit Board
●
Easily Combined for High Power Transmitters
●
Plated Copper Flange
1
Absolute Maximum Ratings at 25°C
Parameter
Suppy Voltage
Absolute Maximum
40V
Input Power
26.5V
200A
0.24A
Output Power @ 3.3 GHz
Thermal Resistance / Per
Transistor
Power Dissipation
Operating Case Temp.
Storage Temperature
400W
-30 to 1200°C
-40 to +125°C
Unless Otherwise Noted, Tolerances Are: Inches ±.005˝
1. Operation of this device outside of these limits may cause
permanent damage.
(Millimeters ±13mm)
Electrical Characteristics at 25°C
Parameter
Symbol
Test Conditions
Units Min. Max.
Output Power
POUT
POUT
POUT
GP
GP
GP
VCC=36 V, PIN=21 W, F=3.1 GHz
VCC=36 V, PIN=21 W, F=3.3 GHz
VCC=36 V, PIN=21 W, F=3.5 GHz
VCC=36 V, PIN=21 W, F=3.1 GHz
VCC=36 V, PIN=21 W, F=3.3 GHz
VCC=36 V, PIN=21 W, F=3.5 GHz
VCC=36 V, PIN=21 W, F=3.1, 3.3, 3.5 GHz
VCC=36 V, PIN=21 W, F=3.1, 3.3, 3.5 GHz
VCC=36 V, PIN=21 W, F=3.1, 3.3, 3.5 GHz
W
145
-
Output Power
W
W
dB
dB
dB
%
dB
-
130
115
8.4
7.9
7.4
35
6
-
Output Power
-
Power Gain
-
Power Gain
-
-
Power Gain
ηC
Collector Efficiency
Input Return Loss
Load VSWR Tolerance
Load VSWR Stability
-
RL
-
VSWR-T
VSWR-S
-
3:1
2:1
VCC=36 V, PIN=21 W, F=3.1, 3.3, 3.5 GHz
-
-
Specifications Subject to Change Without Notice.
M/A-COM, Inc.
1
North America: Tel. (800) 366-2266
Fax (800) 618-8883
■
Asia/Pacific: Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
■
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
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