PH1113-100 [TE]
Radar Pulsed Power Transistor - 100 Watts, 1.1-1.3 GHz, 3ms Pulse, 30% Duty; 雷达脉冲功率晶体管 - 100瓦， 1.1-1.3千兆赫， 3毫秒脉冲， 30 ％占空比
| 型号： | PH1113-100 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Radar Pulsed Power Transistor - 100 Watts, 1.1-1.3 GHz, 3ms Pulse, 30% Duty |
| 文件： | 总2页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PH1113-100
Radar Pulsed Power Transistor - 100 Watts,
µ
1.1-1.3 GHz, 3 s Pulse, 30% Duty
Features
Outline Drawing1
•
•
•
•
•
•
•
•
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Description
M/A-COM’s PH1113-100 is a silicon bipolar NPN power tran-
sistor intended for use in L-band 1.1 - 1.3 GHz pulsed radars.
Designed for common-base, class C, broadband pulsed power
applications, the PH1113-100 can produce 25 watts of output
power with short pulse length (3µS) at 30 percent duty cycle.
The transistor is housed in a 2-lead rectangular metal-ceramic
flange package, with internal input and output impedance match-
ing networks. Diffused emitter ballast resistors and gold metal-
ization assure ruggedness and long-term reliability.
Notes: (unless otherwise specified)
1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)
Broadband Test Fixture Impedance
F (GHz)
Z IF (Ω)
Z OF (Ω)
1.1
1.2
1.3
5.8 - j3.4
5.6 - j1.8
5.9 - j0.4
3.0 - j1.7
3.0 - j1.5
2.8 - j1.3
Absolute Maximum Rating at 25°C
Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
Emitter-Base Voltage
VCES
70
V
V
VEBO
3.0
TEST FIXTURE
INPUT
CIRCUIT
TEST FIXTURE
OUTPUT
CIRCUIT
Collector Current (Peak)
IC
9.0
A
Total Power Dissipation
@ +25°C
PTOT
350
W
Storage Temperature
Tstg
Tj
-65 to +200
200
°C
°C
Z
Z
50
Ω
50
Ω
IF
OF
Junction Temperature
Electrical Specifications at 25°C
Symbol
BVCES
ICES
RTH(JC)
PIN
Parameter
Collector-Emitter Breakdown Voltage IC = 5 mA
Test Conditions
Min
70
-
-
-
8.0
52
9
Max
-
10.0
0.5
16
-
Units
V
mA
°C/W
W
dB
%
Collector-Emitter Leakage Current
Thermal Resistance
Input Power
Power Gain
Collector Efficiency
Input Return Loss
VCE = 32 V
VCC = 32V, PO = 100 W, f = 1100, 1200, 1300 MHz
VCC = 32V, PO = 100 W, f = 1100, 1200, 1300 MHz
VCC = 32V, PO = 100 W, f = 1100, 1200, 1300 MHz
VCC = 32V, PO = 100 W, f = 1100, 1200, 1300 MHz
GP
-
η
RL
VCC = 32V, PO = 100 W, f = 1100, 1200, 1300 MHz
-
dB
-
VSWR-T Load Mismatch Tolerance
VCC = 32V, PO = 100 W, f = 1100, 1200, 1300 MHz
-
3:1
V2.00
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
Radar Pulsed Power Transistor 100 Watts, 1.1-1.3 GHz, 3µs Pulse, 30% Duty
PH1113-100
Test Fixture Electrical Schematic
Top View
Circuit Dimensions
V2.00
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
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