NPT2010_15 [TE]
DC-2.2 GHz HEMT;
| 型号： | NPT2010_15 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | DC-2.2 GHz HEMT |
| 文件： | 总10页 (文件大小：2452K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPT2010
Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT
Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology
Features
Suitable for linear and saturated applications
Tunable from DC-2.2 GHz
48V Operation
Industry Standard Package
High Drain Efficiency (>60%)
Applications
Defense Communications
Land Mobile Radio
Avionics
DC-2.2 GHz
100W
GaN HEMT
Wireless Infrastructure
ISM Applications
VHF/UHF/L-Band Radar
Product Description
The NPT2010 GaN HEMT is a wideband transistor optimized for DC-2.2 GHz operation. This
device has been designed for CW, pulsed, and linear operation with output power levels to 100W
(50 dBm) in an industry standard metal-ceramic package with a bolt down flange.
RF Specifications (CW, 2.15 GHz): VDS = 48V, IDQ = 600mA, TC= 25°C
Symbol
Parameter
Min
Typ
Max
Units
GSS
Small-signal Gain
-
17
-
dB
PSAT
SAT
GP
Saturated Output Power
-
-
50.5
64
-
-
-
-
-
dBm
%
Efficiency at Saturated Output Power
Gain at POUT = 95W
13.5
52.5
-
15
dB
%
Drain Efficiency at POUT = 95W
Drain Voltage
61
VDS
48
V
Ruggedness: Output Mismatch, all phase angles
VSWR = 10:1, No Device Damage
NDS-034 Rev. 1, 052413
Page 1
NPT2010
DC Specifications: TC = 25°C
Symbol
Off Characteristics
IDLK Drain-Source Leakage Current
Parameter
Min
Typ
Max
Units
-
-
-
-
24
12
mA
mA
(VGS=-8V, VDS=160V)
IGLK
Gate-Source Leakage Current
(VGS=-8V, VDS=0V)
On Characteristics
VT
Gate Threshold Voltage
(VDS=48V, ID=24mA)
-2.5
-1.5
-1.2
0.2
14
-0.5
V
V
VGSQ
RON
Gate Quiescent Voltage
(VDS=48V, ID=600mA)
-2.1
-0.3
On Resistance
(VDS=2V, ID=180mA)
-
-
-
-
ID, MAX
Maximum Drain Current
(VDS=7V pulsed, 300µS pulse width,
0.2% Duty Cycle)
A
Thermal Resistance Specification:
Symbol
Parameter
Typ
Units
Thermal Resistance (Junction-to-Case),
TJ = 200 °C
1.75
°C/W
RJC
Junction Temperature (TJ) measured using IR Microscopy, Case Temperature (TC) measured using a thermocouple embedded in
heatsink.
Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted
Symbol
Parameter
Max
Units
VDS
VGS
IG
Drain-Source Voltage
160
-10 to 3
48
V
V
Gate-Source Voltage
Gate Current
mA
W
PT
Total Device Power Dissipation (Derated above 25°C)
Storage Temperature Range
114
TSTG
TJ
-65 to 150
225
°C
°C
Operating Junction Temperature
Human Body Model ESD Rating (per JESD22-A114)
HBM
Class 1A
NDS-034 Rev. 1, 052413
Page 2
NPT2010
Load-Pull Data, Reference Plane at Device Leads
VDS=48V, IDQ=600mA, TC=25C unless otherwise noted
Optimum Source and Load Impedances:
(CW Drain Efficiency and Output Power Tradeoff Impedance)
Frequency
(MHz)
PSAT (W)
GSS (dB)
Drain Efficiency
@ PSAT (%)
ZS ()
ZL ()
500
900
1.1 + j0.8
1.3 - j1.7
2.0 - j6.5
5.9 + j2.0
5.7 + j3.2
2.7 - j1.9
144
125
115
26.1
21.9
16.6
66.8
71.4
66.6
2200
Figure 1: CW Power/Drain Efficiency
Tradeoff Impedances, ZO=10
Figure 3: Efficiency vs. POUT
Figure 2: Gain vs. POUT
NDS-034 Rev. 1, 052413
Page 3
NPT2010
2.15 GHz Narrowband Circuit
(CW, VDS=48V, IDQ=600mA, TC=25C, unless otherwise noted)
Figure 4: Component Placement of 2.15 GHz Narrowband Circuit for NPT2010
Reference
C1, C5
C2, C6
C3, C7
C4, C8
C9
Value
1uF
Manufacturer
AVX
Part Number
1210C105KAT2A
C1206C104K1RACTU
1206C103KAT2A
C0805C102K1RACTU
ATC600F241B
ATC800B100B
ATC800B1R0B
ATC600F0R8B
ATC600F0R9B
ATC600F100B
ATC800B1R5B
ATC800B150B
A04TJL
0.1uF
Kemet
AVX
0.01uF
1000pF
240pF
Kemet
ATC
C10
10pF
ATC
C11
1pF
ATC
C12
0.8pF
ATC
C13
0.9pF
ATC
C14
10pF
ATC
C15
1.5pF
ATC
C16
15pF
ATC
L1
12.5nH
19.4nH
8.0nH
CoilCraft
CoilCraft
CoilCraft
Panasonic
Rogers
L2
0806SQ-19NJL
A03TJL
L3
R1
15Ω
ERJ-2RKF15R0X
Nitronex NBD-139r1
PCB
RO4350, r=3.5, 0.020”
NDS-034 Rev. 1, 052413
Page 4
NPT2010
Typical Performance in 2.15 GHz Narrowband Circuit
(CW, VDS=48V, IDQ=600mA, f=2.15GHz, TC=25C, unless otherwise noted)
Figure 5. Electrical Schematic of 2.15 GHz Narrowband Circuit for NPT2010
(For RF Tuning details see Component Placement Diagram Figure 4)
Figure 6: Gain vs. POUT
Figure 7: Drain Efficiency vs. POUT
Figure 8: Quiescent VGS vs. Temperature
Figure 9: Power De-rating Curve
(TJ = 225°C, TC > 25°C)
NDS-034 Rev. 1, 052413
Page 5
NPT2010
Typical Performance in 2.15 GHz Narrowband Circuit
(CW, VDS=48V, IDQ=600mA, f=2.15GHz, TC=25C, unless otherwise noted)
Figure 10: 2-Tone IMD3 vs. POUT vs. IDQ
(1MHz Tone Spacing)
Figure 11: 2-Tone Gain vs. POUT vs. IDQ
(1MHz Tone Spacing)
Figure 12: 2-Tone IMD vs. POUT
(1MHz Tone Spacing)
NDS-034 Rev. 1, 052413
Page 6
NPT2010
100-700 MHz Broadband Circuit
(CW, VDS=48V, IDQ=600mA, TC=25C, unless otherwise noted)
Figure 13: Component Placement of 100-700 MHz Broadband Circuit for NPT2010
Reference
C1
Value
150uF
Manufacturer
Nichicon
AVX
Part Number
UPW1C151MED
1210C105KAT2A
C1206C104K1RACTU
12061C103KAT2A
ELXY 630ELL271MK25S
ATC100B180
C2, C7
C3, C6
C4, C5
C8
1uF
0.1uF
Kemet
0.01uF
270uF
AVX
United Chemi-Con
ATC
C9
18pF
C10, C19
C11
2.4pF
ATC
ATC100B2R4
5.6pF
ATC
ATC100B5R6
C12
15pF
ATC
ATC100B150
C13
220pF
ATC
600F221FT
C14
12pF
ATC
600F120FT
C15, C16
C17
82pF
ATC
ATC100B820
4.7pF
ATC
ATC100B4R7
C18
2pF
ATC
ATC100B2R0
R1
49.9Ω
Panasonic
Panasonic
Panasonic
Fair-Rite
Anaren
Coilcraft
16 AWG Cu Wire
Coilcraft
Coilcraft
Rogers
ERJ-6ENF49R9V
ERJ-6RQFR33V
ERJ-1TNF24R9U
2673000801
R2
0.33Ω
R3, R4
F1
24.9Ω
Material 73
4:1 Transformer
1.8µH
F2, F3
L1
XMT031B5012
0805LS-182XJLC
5 turn, 0.2"ID
L2
~50nH
5nH
L3
A02TJL
L4, L5
PCB
8nH
A03TJL
Nitronex NBD-120r1
RO4350, er=3.5, 0.020”
NDS-034 Rev. 1, 052413
Page 7
NPT2010
Typical Performance in 100-700 MHz Broadband Circuit
(CW, VDS=48V, IDQ=600mA, TC=25C, unless otherwise noted)
Figure 14. Electrical Schematic of 100-700 MHz Broadband Circuit for NPT2010
(For RF Tuning details see Component Placement Diagram Figure 13)
Figure 16: Performance vs. Frequency
Figure 15: Performance vs. Frequency
(POUT = PSAT
(POUT = 49dBm)
)
Figure 17: Gain/Drain Efficiency vs. POUT
Figure 18: Small Signal s-parameters vs. Frequency
(f = 500MHz)
NDS-034 Rev. 1, 052413
Page 8
NPT2010
Figure 19 - AC360B-2 Metal-Ceramic Package Dimensions (all dimensions in inches [millimeters])
Function
Gate — RF Input
Drain — RF Output (Cut lead)
Source — Ground (Flange)
NDS-034 Rev. 1, 052413
Page 9
NPT2010
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Durham, NC 27703 USA
+1.919.807.9100 (telephone)
+1.919.807.9200 (fax)
info@nitronex.com
www.nitronex.com
Additional Information
This part is lead-free and is compliant with the RoHS directive
(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
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NDS-034 Rev. 1, 052413
Page 10
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