MA4E2054L-1261_V8 [TE]
Low Barrier Schottky Chip; 低势垒肖特基芯片
| 型号： | MA4E2054L-1261_V8 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Low Barrier Schottky Chip |
| 文件： | 总2页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MA4E2054L-1261
Low Barrier Schottky Chip
Features
M/A-COM Products
Rev. V8
Single Junction Chip Outline
MA4E2054
•
•
Low IR (<100nA @ 1V, <500nA @ 3V)
Designed for High Volume, Low Cost Detector
and Mixer Applications
•
•
•
•
•
Low Noise Figure: 5.7 dB (SSB) at X-Band
High Detector Sensitivity: -55 dBm TSS
Low Capacitance: 0.14 pF (typ.)
Low 1/F Noise
RoHS* Compliant
Description and Applications
The MA4E2054L-1261 diode is a low barrier, n-type,
silicon Schottky device. It is useful as a high
performance mixer or detector diode at frequencies
from VHF through X-band. These chips can be
used in automatic assembly processes due to their
0.004” gold bond pads and sturdy construction.
Maximum Ratings
Parameter
Symbol Unit
Values
-65 to +150
-65 to +150
751
TOP
TSTG
PT
Operating Temperature
Storage Temperature
Incident RF Power (CW)
Reverse Voltage @ 25 °C
°C
°C
mW
V
VR
3
IF
-
Forward Current
mA
-
20
2
Class 0
ESD Rating
1. At 25 °C case temperature, Derate linearly to zero watts at
150 °C case temperature.
Typical RF Performance @ +25 °C
2.
Human Body Model
Parameter
Conditions
Typical
Electrical Specifications @ +25 °C
Mixer Noise Figure3
f = 9.375 GHz
LO = 0 dBm
5.7 dB
(SSB)
Parameter
Condition Symbol Specification
Breakdown Voltage
Reverse Leakage Current
VB
IR
3.0 V min.
IR = 10 μA
IF Impedance
IF = 30 MHz
200 ohms
-55 dBm
VR = 1 V
100 nA max.
Tangential Signal
Sensitivity4
IF = 20 uA
BW = 2 MHz
Video NF = 1.5 dB
Reverse Leakage Current
Total Capacitance
VR = 3 V
IR
500 nA max.
VR = 0 V
f = 1 MHz
Detector Output, Voltage
at -30 dBm4
RL = 100K Ohms
20 mV
20 mV
CT
0.16 pF max.
IF = 20 μA
Dynamic Resistance 2
Forward Voltage
IF = 10 mA
IF = 1 mA
RD
VF
17 Ohms max.
Detector Output
RL = 1M Ohm
Zero Bias
Voltage at -30 dBm4
250 mV min.
350 mV min.
3. Fixture tuned to 9.375 GHz.
4. Fixture tuned to 2.5 GHz. See figures on page 3 for untuned
fixture performance.
26
IF (in mA)
2. RD = RS + RJ where RJ
=
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4E2054L-1261
Low Barrier Schottky Chip
M/A-COM Products
Rev. V8
Circuit Model (Chip)
Spice Model Parameters
IS = 3 x 10-8 A
M = 0.50
EG = 0.69 eV
BV = 5.0 V
RS = 11Ω
N = 1.05
TT = 0 S
IBV = 1 x 10 -5 A
CT = 0.13 x 10 -12 pF
VJ = 0.40 V
Recommended Assembly:
1. One mil diameter gold wire
2. Ball bond
3. Conductive silver epoxy for die mounting
Typical Performance Curves @ +25°C
Forward Current vs. Forward Voltage
and Temperature
Detector Output Voltage vs Input Power and Load
Resistance. Diode Forward Biased at 20μA.
Untuned Fixture at 9.375 GHz
10
10000
1000
100
1
+125oC
10
- - - - - - 10k ohms
1
0.1
________
0.1
1M ohm
5k ohms
25oC
-50oC
__ __ __
0.01
0.01
-50
-40
-30
-20
-10
0
10
20
0
50
100
150
200
250
VF (mV)
300
350
400
450
500
INPUT PO WER (dBm)
Detector Output Voltage vs Input Power and Load
Resistance. Diode at Zero Bias. Untuned Fixture at
9.375 GHz
Tuned Fixture Noise Figure vs. Lo Power at 9.375
GHz
9
8
7
6
5
4
3
10000
1000
100
10
1
- - - - - - 1M ohm
________
100k ohms
__ __ __
10k ohms
0.1
0.01
__ . . __ . .
5k ohms
0.01
0.1
1
10
-40
-30
-20
-10
0
10
LO PO WER (mW)
INPUT PO WER (dBm)
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
相关型号：
©2020 ICPDF网 联系我们和版权申明