U2270B-FP [TEMIC]
Telecom Circuit, 1-Func, PDSO16, SO-16;
| 型号： | U2270B-FP |
| 厂家： | 
TEMIC SEMICONDUCTORS |
| 描述： | Telecom Circuit, 1-Func, PDSO16, SO-16 光电二极管 |
| 文件： | 总13页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
U2270B
Read / Write Base Station IC
Description
*)
IC for IDIC
read-write base stations
specific distances. It also includes all signal-processing
circuits which are necessary to form the small input signal
into a microcontroller-compatible signal.
The U2270B is a bipolar integrated circuit for read-write
base stations in contactless identification and immo-
bilizer systems.
The U2270B is well suitable to perform read operations
The IC incorporates the energy transfer circuit to supply with e5530-GT and TK5530-PP transponders and also
the transponder. It consists of an on-chip power supply, an performs read-write operations with TK5550-PP and
oscillator, and a coil driver optimized for automotive- TK5560-PP transponders.
Features
Applications
Carrier frequency f 100 KHz – 150 KHz
Car immobilizers
osc
Typical data rate up to 5 Kbaud at 125 KHz
Animal identification
Access control
Suitable for Manchester and Bi-phase modulation
Power supply from the car battery or from
5-V regulated voltage
Process control
Further industrial applications
Optimized for car immobilizer applications
Tuning capability
Case: SO16 U2270B-FP
Microcontroller-compatible interface
Low power consumption in standby mode
Power supply output for microcontroller
Read / write base station
Transponder / TAG
Carrier
Osc
Transp.
IC
enable
Unlock
System
RF– Field
typ. 125 kHz
MCU
U2270B
e5530
e5550
e5560
Data
NF read channel
output
9300
TK5530-PP
e5530-GT
TK5550-PP
TK5560-PP
Figure 1.
*)
IDIC stands for IDentification Integrated Circuit and is a trademark of TEMIC.
TELEFUNKEN Semiconductors
1 (13)
Rev. A3, 13-Dec-96
U2270B
Pin Description
Pin
1
Symbol
GND
Output
OE
Function
GND
1
HIPASS
RF
16
15
14
Ground
2
Data output
Output
OE
2
3
4
5
6
7
8
3
Data output enable
Data input
4
Input
MS
V
S
5
Mode select coil 1: Common
mode / Differential mode
6
CFE
Carrier frequency enable
Input
MS
13 Standby
7
DGND Driver ground
COIL 2 Coil driver 2
COIL 1 Coil driver 1
8
12
11
10
9
V
Batt
9
10
11
12
13
14
15
16
V
EXT
External power supply
Driver supply voltage
Battery voltage
CFE
DV
V
S
DV
S
V
Batt
DGND
COIL2
EXT
Standby Standby input
V
S
Internal power supply (5 V)
Frequency adjustment
COIL1
RF
9844
HIPASS DC decoupling
Figure 2. Pinning
Block Diagram
V
V
V
DV
EXT
S
Batt
S
Standby
Power supply
COIL1
= 1
MS
CFE
Frequency
adjustment
COIL2
DGND
RF
&
Driver
Oscillator
Output
Amplifier
Input
&
Low pass filter
Schmitt trigger
9692
HIPASS
GND
OE
Figure 3.
2 (13)
TELEFUNKEN Semiconductors
Rev. A3, 13-Dec-96
U2270B
Functional Description
Power Supply (PS)
DV
VS
VBatt
Standby
S
V
EXT
internal supply
9 V
25 k
12 k
6 V
6 V
18 V
PS
COILx
DRV
11413
DGND
Figure 4. Equivalent circuit of power supply and antenna driver
The U2270 can be operated with one external supply V is the internal power supply voltage except for the
S
voltage or with two externally-stabilized supply voltages driver circuit. Pin V is used to connect a block capacitor.
S
for an extended driver output voltage or from the 12-V V can be switched off by the pin STANDBY. In standby
S
battery voltage of a vehicle. The 12-V supply capability mode, the chip’s power consumption is very low. V
is
EXT
is achieved via the on-chip power supply (see figure 4). the supply voltage of the antenna’s pre-driver. This
The power supply provides two different output voltages, voltage can also be used to operate external circuits, i.e.,
V and V
.
a microcontroller. In conjunction with an external NPN
transistor, it also establishes the supply voltage of the
antenna coil driver, DVS.
S
EXT
TELEFUNKEN Semiconductors
3 (13)
Rev. A3, 13-Dec-96
U2270B
The following section explains the 3 different
operation modes to power the U2270B.
3. Battery-voltage operation
Using this operation mode, V and V
are generated by
EXT
S
1. One-rail operation
the internal power supply. (refer to figure 7). For this
All internal circuits are operated from one 5-V power rail. mode, an external voltage regulator is not needed. The IC
(see figure 5). In this case, V ,V and DV serve as can be switched off via the pin Standby. V supplies the
S
EXT
S
EXT
inputs. V
is not used but should also be connected to base of an external NPN transistor and external circuits,
Batt
that supply rail.
i.e., a microcontroller (even in Standby mode).
+5 V (stabilized)
Pin V and V are overvoltage protected via internal
EXT
Batt
Zener diodes (refer figure 4).The maximum current into
that pins is determined by the maximum power dissipa-
tion and the maximum junction temperature of the IC. For
a short-time current pulse, a higher power dissipation can
be assumed (refer to application note ANT019).
D
V
V
V
Standby
Batt
VS
EXT
S
7 to 16 V
12579
Figure 5.
2. Two-rail operation
In that application, the driver voltage, DV and the
S,
pre-driver supply, V , are operated at a higher voltage
than the rest of the circuitry to obtain a higher
driver-output swing and thus a higher magnetic field,
EXT
D
V
V
V
Standby
Batt
VS
EXT
S
12600
refer to figure 6. V is connected to a 5-V supply, whereas
S
Figure 7.
the driver voltages can be as high as 8 V. This operation
mode is intended to be used in situations where an
extended communication distance is required.
7 to 8 V (stabilized)
5 V (stabilized)
D
V
V
V
Standby
Batt
VS
EXT
S
12580
Figure 6.
Table 1. The following table summarizes the characteristics of the various operation modes.
Operation Mode
1. One-rail operation
2. Two-rail operation
External Components Re-
quired
Supply Voltage Range
Driver Output
Voltage Swing
Standby Mode
Available
1 Voltage regulator
1 Capacitor
5 V ± 10%
4 V
No
2 Voltage regulators
2 Capacitors
5 V ± 10%
7 V to 8 V
6 V to 7 V
4 V
No
3. Battery voltage
operation
1 Transistor
6 V to 16 V
Yes
2 Capacitors
Optional for load-dump
protection:
1 Resistor
1 Capacitor
4 (13)
TELEFUNKEN Semiconductors
Rev. A3, 13-Dec-96
U2270B
Oscillator (Osc)
VBias + 0.4 V
The frequency of the on-chip oscillator is controlled by a
current fed into the R input. An integrated compensation
circuit ensures a widly temperature and supply voltage in-
dependent frequency which is selected by a fixed resistor
F
RS
10 k
~
~
between R (pin 15) and V (pin 14). For 125 kHz a resis-
CIN
F
S
210 k
tor value of 110 k is defined. For other frequencies, use
the following formula:
VBias – 0.4 V
VBias
14375
f0 [kHz]
Rf
– 5 k
12601
This input can be used to adjust the frequency close to the
resonance of the antenna. For more details refer to the ap-
plicatons and the application note ANT019.
Figure 9. Equivalent circuit of Pin Input
Amplifier (AMP)
VCC
The differential amplifier has a fixed gain, typically 30.
The HIPASS pin is used for dc decoupling. The lower
cut–off frequency of the decoupling circuit can be
calculated as follows:
Rf
2 k
RF
1
fcut
2
CHP Ri
9695
The value of the internal resistor R can be assumed to be
Figure 8. Equivalent circuit of Pin RF
i
2.5 k .
Recommended values of C for selected data rates can
be found in the chapter “Applications”.
HP
Filter (LPF)
The fully-integrated low-pass filter (4th order butter-
worth) removes the remaining carrier signal and
high-frequency disturbancies after demodulation. The
upper cut-off frequency of the LPF depends on the se-
lected oscillator frequency. The typ. value is fosc/18. That
means that data rates up to fosc/25 are possible if Bi-phase
or Manchester encoding is used.
R
+
–
Schmitt
trigger
R
LPF
VRef
A high-pass characteristic results from the capacitive
coupling at the input Pin 4, as shown in figure 9. The input
R
R
voltage swing is limited to 2 V . For frequency response
pp
Ri
calculation, the impedances of the signal source and LPF
input (typ. 220 k ) have to be considered. The recom-
mended values of the input capacitor for selected data
rates are shown in the chapter “Applications”.
12578
HIPASS
CHP
Note: After switching on the carrier, the dc voltage of
the coupling capacitor changes rapidly. When
the antenna voltage is stable, the LPF needs
approximately 2 ms to recover full sensitivity.
Figure 10. Equivalent circuit of pin HIPASS
TELEFUNKEN Semiconductors
5 (13)
Rev. A3, 13-Dec-96
U2270B
Schmitt Trigger
The signal is processed by a Schmitt trigger to suppress
possible noise and to make the signal C compatible. The
hysteresis level is 100 mV symmetrically to the dc opera-
tion point. The open-collector output is enabled by a low
level at OE (Pin 3).
30
A
7
A
12603
MS
12602
Figure 12. Equivalent circuit of Pin MS
OE
Figure 11. Equivalent circuit of Pin OE
Driver (DRV)
The driver supplies the antenna coil with the appropriate
energy. The circuit consists of two independant output
stages. These output stages can be operated in two
different modes. In common mode, the outputs of the
stages are in phase. In this mode, the outputs can be
30
A
interconnected, to achieve
a high current output
capability. Using the differential mode, the output
voltages are in anti-phase. Thus, the antenna coil is driven
with a higher voltage. For a specific magnetic field, the
antenna coil impedance is higher for the differential
mode. As a higher coil impedance results in a better
system sensitivity, the differential mode should be
preferred.
The CFE input is intended to be used for writing data into
a read/write or a crypto transponder. This is achieved by
interrupting the RF field with short gaps. The TEMIC
write method is described in the data sheets of TK5550
and TK5560. The various functions are controlled by the
inputs MS and CFE, refer to function table. The
equivalent circuit of the driver is shown in figure 4.
12604
CFE
Figure 13. Equivalent circuit of Pin CFE
6 (13)
TELEFUNKEN Semiconductors
Rev. A3, 13-Dec-96
U2270B
Function Table
CFE
Low
Low
High
MS
Low
High
Low
COIL1
High
Low
COIL2
High
High
High
High
OE
Low
High
Output
Enabled
Disabled
Standby
Low
High
U2270B
Standby mode
Active
Applications
To achieve the suitable application, consider the power The maximum transmission distance is also influenced by
supply environment and the magnetic coupling situation.
the accuracy of the antenna’s resonance. Therefore, the
recommendations given above are proposals only. A good
compromise for the resonance accuracy of the antenna is
The selection of the appropriate power supply operation
mode depends on the supply environment. If an
unregulated supply voltage in the range of V = 7 V to 16 V
is available, the internal power supply of the U2270B can
be used. In this case, the standby mode can be used and
an external low-current µC can be supplied.
a value in the range of f = 125 kHz ± 3%. Further details
res
concerning the adequate application and the antenna
design is provided in the TEMIC application note
ANT019 and in the TEMIC article “Antenna Design
Hints”.
If a 5-V supply rail is available, it can be used to power
the U2270B. In this case please check that the voltage is
noise-free. An external power transistor is not necessary.
The application of the U2270B includes the two
capacitors C
and C
whose values are linearly
IN
HP
dependend on the transponder’s data rate. The following
table gives the appropriate values for the most common
data rates. The values are valid for Manchester and
Bi-phase code.
The application depends also on the magnetic coupling
situation. The coupling factor mainly depends on the
transmission distance and the antenna coils. The
following table lists the appropriate application for a
given coupling factor. The magnetic coupling factor can
be determined using the TEMIC test transponder coil.
Data Rate
Input Capacitor
Decoupling
f = 125 kHz
(C )
IN
Capacitor (C )
HP
f/32 = 3.9 kbit/s
f/64 = 1.95 kbit/s
680 pF
1.2 nF
100 nF
220 nF
Magnetic Coupling
Factor
Appropriate Application
The following applications are typical examples. The
values of C and C correspond to the transponder’s
k > 3%
k > 1%
Free-running oscillator
Diode feedback
IN
HP
data rate only. The arrangement to fit the magnetic
coupling situation is also independent from other design
issues exept of one constellation. This constellation,
consisting of diode feedback plus fine frequency tuning
together with the two-rail power supply should be used
if the transmission distance is in the range of d 10 cm.
k > 0.5%
Diode feedback
plus frequency altering
k > 0.3%
Diode feedback
plus fine frequency tuning
TELEFUNKEN Semiconductors
7 (13)
Rev. A3, 13-Dec-96
U2270B
Application 1
Application using few external components. This application is for intense magnetic coupling only.
9693
110 k
5 V
V
EXT
V
S
V
DD
V
Batt
U2270B
47 nF
47
F
DV
S
RF
MS
CFE
INPUT
C
IN
OE
STANDBY
OUTPUT
HIPASS
Micro-
controller
1N4148
C
HP
470 k
COIL1
COIL2
1.5 nF
R
1.35
H
1.2 nF
V
SS
DGND
GND
Figure 14.
Application 2
Basic application using diode feedback. This application permits higher communication distances than application 1.
12605
360
BC639
12 V
4x
1N4148
22
22
F
F
68 k
GND
4.7 nF
22
F
75 k
43 k
100 k
1.2 nF
VS VEXT DVS VBatt
VDD
MS
RF
CFE
COIL 2
Micro-
U2270B
82
1.35 mH
Antenna
controller
COIL 1
Standby
Output
OE
Input
I / O
CIN
1N4148
470 k
HIPASS
CHP
1.5 nF
VSS
DGND GND
Figure 15.
8 (13)
TELEFUNKEN Semiconductors
Rev. A3, 13-Dec-96
U2270B
Application 3
This application is comparable to application 2 but alters distances. This application is preferred if the detecting
the operating frequency. This permits higher antenna µC is close to the U2270B as an additional µC signal
resonance tolerances and/or higher communication controls the adequate operating frequency.
68 k
4x 1N4148
5 V
47 nF
22
F
4.7 nF
75 k
GND
43 k
100 k
V
V
DV
V
V
DD
S
EXT
S
Batt
MS
RF
1 nF
CFE
COIL 2
Micro-
controller
U2270B
82
1.5 mH
COIL 1
Input
Standby
Output
OE
Antenna
C
IN
1N4148
180 pF
HIPASS
DGND
V
470 k
SS
GND
C
HP
1.5 nF
4.7 k
100
BC846
1.5 k
12606
Figure 16.
TELEFUNKEN Semiconductors
9 (13)
Rev. A3, 13-Dec-96
U2270B
Absolute Maximum Ratings
All voltages are referred to GND (Pins 1 and 7).
Parameters/Conditions Pin
Symbol
Min.
Typ.
Max.
16
Unit
V
Operating voltage
Operating voltage
Pin 12
V
Batt
V
S
Pins 8, 9, 10, 11 and 14
V , V
,
–0.3
8
V
S
EXT
DV , Coil 1,
S
Coil 2
Range of input and output voltages
Pins 3, 4, 5, 6, 15 and 16
Pins 2 and 13
Pin 10
–0.3
–0.3
V +0.3
V
S
V
Batt
Output current
I
10
mA
mA
mA
mW
°C
EXT
Output current
Pin 2
I
10
OUT
Driver output current
Power dissipation
Junction temperature
Storage temperature
Ambient temperature
Pins 8 and 9
I
200
380
150
125
105
Coil
SO16
P
tot
T
j
T
–55
–40
°C
stg
T
°C
amb
Thermal Resistance
Parameters/Conditions Pin
Symbol
Min.
Typ.
Max.
120
Unit
K/W
Thermal resistance
SO16
R
thJA
Operating Range
All voltages are referred to GND (Pins 1 and 7)
Parameters/Conditions Pin
Symbol
Min.
7
Typ.
12
Max.
16
Unit
V
Operating voltage
Operating voltage
Operating voltage
Pin 12
Pin 14
V
Batt
V
S
4.5
4.5
5.4
6.3
8
V
Pin 10
Pin 11
V
EXT
DV
S
Carrier frequency
f
100
125
150
kHz
osc
10 (13)
TELEFUNKEN Semiconductors
Rev. A3, 13-Dec-96
U2270B
Electrical Characteristics
Test conditions (unless otherwise specified): V
= 12 V, T
= –40 to 105 C
Batt
amb
Parameters
Data output
– collector emitter
saturation voltage
Test Conditions / Pins
Symbol
Min.
Typ.
Max.
400
Unit
mV
Pin 2
I
= 5 mA
V
CEsat
out
Data output enable
– low level input voltage
– high level input voltage
Pin 3
Pin 4
V
V
ih
0.5
V
V
il
2.4
10
Data input
– clamping level low
– clamping level high
– input resistance
– input sensitivity
V
2
3.8
220
V
V
k
il
V
ih
R
in
f = 3 kHz (squarewave)
gain capacitor = 100 nF
mV
pp
Driver polarity mode
Pin 5
– low level input voltage
– high level input voltage
Carrier frequency enable
– low level input voltage
– high level input voltage
V
V
ih
0.2
V
V
il
2.4
3.0
Pin 6
V
0.8
9
V
V
mA
il
V
ih
Operating current
Pin10, 11, 12 and 14
5 V application without
load connected to the coil
driver
I
4.5
30
S
Standby current
Pin 12
I
70
A
St
12 V application
V
S
Pin 14
– Supply voltage
– Supply voltage drift
– Output current
V
4.6
1.8
5.4
4.2
3.5
6.3
V
mV/K
mA
S
dV /dT
s
I
S
Driver output voltage
– One rail operation
– Battery voltage operation
I = ±100 mA
L
V , V , V , DV = 5 V
V
DRV
V
DRV
2.9
3.1
3.6
4.0
4.3
4.7
V
PP
V
PP
S
EXT Batt
S
V
Batt
= 12 V Pins 8 and 9
Vext
Pin 10
– Output voltage
– Supply voltage drift
– Output current
– Standby output current
V
4.6
5.4
4.2
6.3
V
mV/K
mA
EXT
dV
/dT
EXT
IC active
standby mode
I
I
3.5
0.4
EXT
EXT
mA
Standby input
Pin 13
– low level input voltage
– high level input voltage
V
V
ih
0.8
V
V
il
3.1
Oscillator
RF-resistor = 110 k
– Carrier frequency
Low pass filter
– Cut off frequency
(application 2), REM 1.
f
121
125
7
129
kHz
kHz
0
Carrier freq. = 125 kHz
f
cut
Amplifier
– Gain
C
HP
= 100 nF
30
Schmitt trigger
– Hysteresis voltage
100
mV
REM1.:Inapplication1.wheretheoscillatoroperatesinthefreerunningmode,theICmustbesolderedfreefromdistortion.Otherwise,
the oscillator frequency may be out of bounds.
TELEFUNKEN Semiconductors
11 (13)
Rev. A3, 13-Dec-96
U2270B
Dimensions in mm
Package: SO16
94 8875
12 (13)
TELEFUNKEN Semiconductors
Rev. A3, 13-Dec-96
U2270B
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
TELEFUNKEN Semiconductors
13 (13)
Rev. A3, 13-Dec-96
相关型号：
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