TSOP1233KS1 [TEMIC]
Logic IC Output Optocoupler, 1-Channel, 3 PIN;
| 型号： | TSOP1233KS1 |
| 厂家： | 
TEMIC SEMICONDUCTORS |
| 描述： | Logic IC Output Optocoupler, 1-Channel, 3 PIN |
| 文件： | 总7页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSOP12..KS1
Photo Modules for PCM Remote Control Systems
Available types for different carrier frequencies
Type
f
Type
f
0
0
TSOP1230KS1 30 kHz TSOP1233KS1 33 kHz
TSOP1236KS1 36 kHz TSOP1237KS1 36.7 kHz
TSOP1238KS1 38 kHz TSOP1240KS1 40 kHz
TSOP1256KS1 56 kHz
Description
The TSOP12..KS1 – series are miniaturized receivers for
infrared remote control systems. PIN diode and preampli-
fier are assembled on lead frame, the epoxy package is
designed as IR filter. The demodulated output signal can
directly be decoded by a microprocessor.
12797
The main benefit is the reliable function even in disturbed
ambient and the protection against uncontrolled output
pulses.
Features
Photo detector and preamplifier in one package
Internal filter for PCM frequency
Output active low
Low power consumption
Improved shielding against electrical field distur-
bance
Continuous data transmission possible (1200 bit/s)
Suitable burst length ≥10 cycles/burst
TTL and CMOS compatibility
Special Features
Enhanced immunity against all kinds of disturbance
light
No occurrence of disturbance pulses at the output
Block Diagram
2
V
S
Control
Circuit
Input
100 k
3
OUT
GND
PIN
Band
Pass
Demodu-
lator
AGC
1
94 8136
TELEFUNKEN Semiconductors
1 (7)
Rev. A1, 22-Jul-97
TSOP12..KS1
Absolute Maximum Ratings
T
amb
= 25 C
Parameter
Test Conditions
Symbol
Value
–0.3...6.0
5
Unit
V
Supply Voltage
Supply Current
Output Voltage
Output Current
(Pin 2)
(Pin 2)
(Pin 3)
(Pin 3)
V
S
I
mA
V
S
V
O
–0.3...6.0
5
I
mA
C
O
Junction Temperature
T
100
j
Storage Temperature Range
Operating Temperature Range
Power Consumption
T
–25...+85
–25...+85
50
C
stg
T
amb
C
(T
85 C)
P
tot
mW
C
amb
Soldering Temperature
t
5 s
T
260
sd
Basic Characteristics
T
amb
= 25 C
Parameter
Test Conditions
V = 5 V, E = 0
Symbol
Min
0.4
Typ
0.6
1.0
35
Max
Unit
mA
mA
m
I
0.8
Supply Current (Pin 2)
S
v
SD
V = 5 V, E = 40 klx, sunlight
I
SH
S
v
Transmission Distance
E = 0, test signal see fig.7,
v
d
IR diode TSIP5201, I = 400 mA
F
2
Output Voltage Low (Pin 3)
Irradiance (30 – 40 kHz)
I
= 0.5 mA,E = 0.7 mW/m ,
V
250
mV
OSL
e
OSL
f = f , t /T = 0.4
o
p
2
2
Pulse width tolerance:
t – 5/f < t < t + 6/f ,
E
E
0.35
0.4
0.5 mW/m
e min
pi
o
po
pi
o
test signal (see fig.7)
Irradiance (56 kHz)
Pulse width tolerance:
0.6 mW/m
e min
t – 5/f < t < t + 6/f ,
pi
o
po
pi
o
test signal (see fig.7)
2
Irradiance
Directivity
E
30
W/m
e max
Angle of half transmission distance
ϕ
±45
deg
1/2
Application Circuit
330 *)
+5V **)
2
3
1
4.7 F *)
TSOP12..
>10 k
optional
TSAL62..
C
12844
GND
*) only necessary to suppress power supply disturbances
**) tolerated supply voltage range : 4.5V<V <5.5V
S
2 (7)
TELEFUNKEN Semiconductors
Rev. A1, 22-Jul-97
TSOP12..KS1
Typical Characteristics (Tamb = 25 C unless otherwise specified)
1.0
0.8
0.6
2.0
1.6
f(E)=f
0
1.2
0.8
0.4
0.2
0.4
0.0
f = f 5%
0
f ( 3dB ) = f /10
0
0.0
1.3
2.0
0.7
0.8
0.9
1.0
1.1
1.2
0.0
0.4
0.8
1.2
1.6
94 8143
f/f – Relative Frequency
0
94 8147
E – Field Strength of Disturbance ( kV/m )
Figure 1. Frequency Dependence of Responsivity
Figure 4. Sensitivity vs. Electric Field Disturbances
10
1.0
0.9
0.8
f = f
0
1 kHz
Input burst duration
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
10 kHz
1
= 950 nm,
optical test signal, fig.7
100 Hz
0.1
1000
AC Voltage on DC Supply Voltage (mV)
0.1
1.0
10.0 100.0 1000.0 10000.0
0.01
0.1
1
10
100
2
12841
E – Irradiance ( mW/m )
94 9106
V
s RMS –
e
Figure 2. Sensitivity in Dark Ambient
Figure 5. Sensitivity vs. Supply Voltage Disturbances
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.0
0.9
Correlation with ambient light sources
(Disturbance effect):10W/m 1.4klx
(Stand.illum.A,T=2855K) 8.2klx
(Daylight,T=5900K)
2
Sensitivity in dark ambient
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Ambient, = 950 nm
0.01
0.10
1.00
10.00
100.00
–30 –15
0
15 30 45 60 75 90
2
96 12111
E – DC Irradiance (W/m )
96 12112
T
amb
– Ambient Temperature ( °C )
Figure 3. Sensitivity in Bright Ambient
Figure 6. Sensitivity vs. Ambient Temperature
TELEFUNKEN Semiconductors
3 (7)
Rev. A1, 22-Jul-97
TSOP12..KS1
Optical Test Signal
( IR diode TSIP 5201, I = 0.4 A, 30 pulses, f = f , T = 10 ms
E
e
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
F
0
T
on
t
t
*
pi
T
off
T
* t
10/fo is recommended for optimal function
pi
= 950 nm,
optical test signal, fig.8
Output Signal
96 12109
V
V
O
1 )
2 )
7/f < t < 15/f
0
0
d
OH
OL
t
= t
6/f
0
po
pi
0.1
1.0
10.0 100.0 1000.0 10000.0
V
2
12843
E – Irradiance (mW/m )
e
t
1 )
t
d
2 )
t
po
Figure 7. Output Function
Figure 10. Output Pulse Diagram
Optical Test Signal
E
e
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V = 5 V
s
t
600
s
600 s
T = 60 ms
94 8134
Output Signal, ( see Fig.10 )
V
V
O
OH
OL
–30 –15
0
15 30 45 60 75 90
V
t
96 12115
T
amb
– Ambient Temperature ( °C )
T
on
T
off
Figure 8. Output Function
Figure 11. Supply Current vs. Ambient Temperature
1.2
1.0
0.8
0.6
0.4
0.2
3.0
2.5
2.0
1.5
1.0
0.5
0
N=16 pulses
per burst
N=22
N=32
0
1150
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
750
850
950
1050
12842
t /T – Duty Cycle
p
94 8408
– Wavelength ( nm )
Figure 9. Sensitivity vs. Duty Cycle
Figure 12. Relative Spectral Sensitivity vs. Wavelength
4 (7)
TELEFUNKEN Semiconductors
Rev. A1, 22-Jul-97
TSOP12..KS1
0°
10°
20°
0°
10°
20°
30°
40°
30°
40°
1.0
0.9
0.8
1.0
0.9
0.8
50°
60°
50°
60°
70°
80°
70°
80°
0.7
0.7
0.6
0.6
0.6
0.4
0.2
0
0.2
0.4
0.6
0.4
0.2
0
0.2
0.4
d
– Relative Transmission Distance
d
– Relative Transmission Distance
rel
95 11339p2
95 11340p2
rel
Figure 13. Vertical Directivity ϕ
Figure 14. Horizontal Directivity ϕ
x
y
TELEFUNKEN Semiconductors
5 (7)
Rev. A1, 22-Jul-97
TSOP12..KS1
Dimensions in mm
12824
6 (7)
TELEFUNKEN Semiconductors
Rev. A1, 22-Jul-97
TSOP12..KS1
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
TELEFUNKEN Semiconductors
7 (7)
Rev. A1, 22-Jul-97
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